GS61008T
Top cooled 100V enhancement mode GaN transistor
Preliminary Datasheet
Features
– 100V enhancement mode power switch
– Top cooled configuration
– Ultra low FOM Island Technology™ die
– Low inductance GaNPX™ package
– Reverse current capability
–
Zero reverse recovery loss
–
RoHS 6 compliant
Applications
–
48V DC-DC conversion
–
Telecom & Cloud Computing Systems
–
Automotive Systems
–
Energy Storage Systems
–
AC-DC power supplies (secondary)
–
VHF very small form-factor AC-DC Adapter
–
Appliances and power tools
top view
circuit symbol
D
TP
G
S
G
TP = thermal pad - internally connected to
the source (S) and to the substrate.
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Operating Junction Temperature
Storage Temperature Range
Drain-to-Source Voltage
Gate-to-Source Voltage
Gate-to-Source Voltage - transient
Continuous Drain Current (Tcase=25°C) (Note 1)
Continuous Drain Current (Tcase=100°C)
Pulsed Drain Current (Tcase=25°C)
Symbol
TJ
TS
VDS
VGS
VGS
IDS(cont)25
IDS(cont)100
IDS(pulse)
Value
-55 to +150
-55 to +150
100
-10 to + 7
±10
90
60
135
Unit
°C
°C
V
V
V
A
(1) Limited by saturation
Preliminary – Rev 150904
© 2009-2015 GaN Systems Inc.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
1
GS61008T
Top cooled 100V enhancement mode GaN transistor
Preliminary Datasheet
Thermal Characteristics (Typical values unless otherwise noted)
Parameter
Thermal Resistance (junction to case)
Thermal Resistance (junction to ambient)
Maximum Soldering Temperature (MSL3 rated)
Ordering Information
Part number
GS61008T
GS61008T
Preliminary – Rev 150904
Package type
GaNPX top-cooled
GaNPX top-cooled
Symbol
RΘJC
RΘJA
TSOLD
Ordering code
GS61008T-TR
GS61008T-MR
Value
0.55
55
260
Units
°C /W
°C
Packing method
Tape-and-reel
Mini-reel
© 2009-2015 GaN Systems Inc.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
2
GS61008T
Top cooled 100V enhancement mode GaN transistor
Preliminary Datasheet
Electrical Characteristics (Typical values at TCASE= 25°C unless otherwise noted)
Parameters
Drain-to-Source Breakdown Voltage
Symbol
Value
Units
BVDSS
100
V
7.4
mΩ
18.5
mΩ
1.6
V
0.5
µA
100
µA
Drain-to-Source On Resistance (TJ = 25°C)
RDS(on)
Drain-to-Source On Resistance (TJ = 150°C)
Gate Threshold Voltage
VGS(th)
Drain to Source Leakage Current (TJ = 25°C)
IDSS
Drain to Source Leakage Current (TJ = 150°C)
Conditions (Note 2)
VGS = 0V
ID = 1mA
VGS = 6V, TJ = 25°C
ID = 25A
VGS = 6V, TJ = 150°C
ID =25A
VDS = VGS
ID = 2mA
VDS = 100V
VGS = 0V, TJ = 25°C
VDS = 100V
VGS = 0V, TJ = 150°C
Gate to Source Current
IGS
200
µA
VGS=6V, VDS=0V
Gate Resistance
RG
1.5
Ω
f=1MHz, open drain
Input Capacitance
CISS
610
Output Capacitance
COSS
250
pF
Reverse Transfer Capacitance
CRSS
15
VDS = 80V
VGS = 0V
f = 1MHz
Effective Output Capacitance, Energy Related (Note 4)
CO(ER)
293
pF
Effective Output Capacitance, Time Related (Note 5)
CO(TR)
360
pF
Total Gate Charge
QG(TOT)
12
nC
Gate-to-Source Charge
QGS
2
nC
Gate-to -Drain Charge
QGD
2.2
nC
Reverse Recovery Charge
QRR
0
nC
Output Charge
QOSS
21
nC
Gate plateau voltage
Vplat
3.0
V
Source-Drain Reverse Voltage
VSD
0.15
V
Source-Drain Reverse Voltage
VSD
2.0
V
VGS =0V
VDS=0 to 80V
ID =constant
VGS =0V
VDS=0 to 80V
VGS=0 to 6V
VDS=50V
ID=27A
VDS = 80V
VGS = 6V, TJ = 25°C
ISD =9A
VGS = 0V, TJ = 25°C
ISD =9A
(3) All parameters are specified with the substrate and thermal pad connected to the source
(4) CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0V to the stated VDS
(5) CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0V to the stated VDS
Preliminary – Rev 150904
© 2009-2015 GaN Systems Inc.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
3
GS61008T
Top cooled 100V enhancement mode GaN transistor
Preliminary Datasheet
Figure 1: GS61008T typical IDS vs. VDS @ TJ = 25 ⁰C
Figure 2: GS61008T typical IDS vs. VDS @ TJ = 150 ⁰C
Figure 3: GS61008T typical RDS(on) vs. ID for VGS = 6V @Tj=25°C
Figure 4: GS61008T typical RDS(on) vs. ID for VGS = 6V @Tj=150°C
Preliminary – Rev 150904
© 2009-2015 GaN Systems Inc.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
4
GS61008T
Top cooled 100V enhancement mode GaN transistor
Preliminary Datasheet
Figure 5 : GS61008T typical transfer characteristic ID vs. VGS
Figure 6: GS61008T Reverse Conduction Characteristics
Figure 7 : GS61008T typical input, output and reverse
capacitance vs. VDS
Figure 8: GS61008T typical gate charge, QG, vs. VGS @ VDS=50V
Preliminary – Rev 150904
© 2009-2015 GaN Systems Inc.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
5
GS61008T
Top cooled 100V enhancement mode GaN transistor
Preliminary Datasheet
Figure 9 : GS61008T Safe operating area @ Tcase= 25°C
Figure 10: GS61008T Temperature de-rating curve
Figure 11: GS61008T Typical COSS stored Energy
Preliminary – Rev 150904
© 2009-2015 GaN Systems Inc.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
6
GS61008T
Top cooled 100V enhancement mode GaN transistor
Preliminary Datasheet
Preliminary – Rev 150904
© 2009-2015 GaN Systems Inc.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
7
GS61008T
Top cooled 100V enhancement mode GaN transistor
Preliminary Datasheet
Package Dimensions
Recommended Minimum Footprint
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© 2009-2015 GaN Systems Inc. All rights reserved.
Preliminary – Rev 150904
© 2009-2015 GaN Systems Inc.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
8