High Temperature, Low Power
Operational Amplifier
AD8634-KGD
Known Good Die
FEATURES
METAL MASK DIE IMAGE
Extreme high temperature operation
−40°C to +210°C, tested to +175°C
Rail-to-rail output
Low power: 1.3 mA maximum
Gain bandwidth product: 9.7 MHz typical at AV = 100
Low offset voltage: 250 μV maximum
Unity-gain stable
High slew rate: 5.0 V/μs typical at 210°C
Low noise: 4.2 nV/√Hz typical at 1 kHz and 210°C
APPLICATIONS
V+
OUT A
OUT B
–IN A
–IN B
+IN A
+IN B
11524-101
V–
Downhole drilling and instrumentation
Avionics
Heavy industrial
High temperature environments
Figure 1.
GENERAL DESCRIPTION
The AD8634-KGD is a precision, 9.7 MHz bandwidth, dual
amplifier that features rail-to-rail outputs. The AD8634-KGD is
guaranteed to operate from 3 V to 30 V (or from ±1.5 V to
±15 V) and at very high temperatures. The AD8634-KGD is
specified and characterized for −40°C to +210°C and is tested at
+175°C.
The AD8634-KGD is well suited for applications that require
both ac and dc precision performance. The combination of wide
bandwidth, low noise, and precision makes the AD8634-KGD
useful in a wide variety of applications, including filters and
interfacing with a variety of sensors.
Rev. 0
Additional application and technical information can be found
in the AD8634 data sheet.
The AD8634-KGD is a member of a growing series of high
temperature qualified products offered by Analog Devices, Inc.
For a complete selection table of available high temperature
products, see the high temperature product list and
qualification data available at www.analog.com/hightemp.
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
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Tel: 781.329.4700
©2014 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
AD8634-KGD
Known Good Die
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................5
Applications ....................................................................................... 1
ESD Caution...................................................................................5
Metal Mask Die Image ..................................................................... 1
Pad Configuration And Function Descriptions ............................6
General Description ......................................................................... 1
Outline Dimensions ..........................................................................7
Revision History ............................................................................... 2
Die Specifications and Assembly Recommendations ..............7
Specifications..................................................................................... 3
Ordering Guide .............................................................................7
Electrical Characteristics, VSY = ±15.0 V................................... 3
Electrical Characteristics, VSY = 5.0 V ....................................... 4
REVISION HISTORY
7/14—Revision 0: Initial Version
Rev. 0 | Page 2 of 7
Known Good Die
AD8634-KGD
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS, VSY = ±15.0 V
VSY = ±15.0 V, VCM = 0 V, TMIN ≤ TA ≤ TMAX, unless otherwise noted.
Table 1.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Offset Voltage Drift
Offset Voltage Matching
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Input Impedance
Differential
Common-Mode
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Short-Circuit Current
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current per Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Unity-Gain Crossover
−3 dB Closed-Loop Bandwidth
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
Symbol
Test Conditions/ Comments
Min
VOS
ΔVOS/ΔT
−40°C ≤ TA ≤ +210°C
Typ
Max
250
−200
−40
−14.5
100
100
115
108
μV
μV/°C
μV
nA
nA
V
dB
dB
53||1.1
1.1||2.5
kΩ||pF
GΩ||pF
14.90
14.5
14.75
−14.95
−14.75
V
V
V
V
V
V
mA
0.35
TA = TMAX
IB
IOS
VIN
CMRR
AVO
VOH
VCM = −14.0 V to +14.0 V
−13.5 V ≤ VOUT ≤ +13.5 V, RL =
2 kΩ
14.8
14.0
14.60
ISC
RL = 10 kΩ to VCM
RL = 2 kΩ to VCM
RL = 2 kΩ to VCM, TA = TMAX
RL = 10 kΩ to VCM
RL = 2 kΩ to VCM
RL = 2 kΩ to VCM, TA = TMAX
VOUT = 0 V, TA = TMAX
PSRR
ISY
VSY = ±2 V to ±18 V
IOUT = 0 mA, TA = TMAX
103
SR
GBP
RL = 2 kΩ
VIN = 5 mV p-p, RL = 10 kΩ,
AV = 100
VIN = 5 mV p-p, RL = 10 kΩ, AV = 1
VIN = 5 mV p-p, AV = 1
3.6
VOL
UGC
−3dB
ΦM
en p-p
en
in
0.1 Hz to 10 Hz
f = 1 kHz
Rev. 0 | Page 3 of 7
Unit
150
+200
30
+14.5
−14.8
−14.65
−14.65
+105/−18
113
1.1
1.3
dB
mA
5.0
9.7
V/µs
MHz
7.0
11.0
82
MHz
MHz
Degrees
0.13
4.2
0.6
µV p-p
nV/√Hz
pA/√Hz
AD8634-KGD
Known Good Die
ELECTRICAL CHARACTERISTICS, VSY = 5.0 V
VSY = 5.0 V, VCM = 2.5 V, VOUT = 2.5 V, TMIN ≤ TA ≤ TMAX, unless otherwise noted.
Table 2.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Offset Voltage Drift
Offset Voltage Matching
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Input Impedance
Differential
Common-Mode
OUTPUT CHARACTERISTICS
Output Voltage High
Symbol
Test Conditions/ Comments
Min
VOS
ΔVOS/ΔT
250
−200
−40
0.5
55
100
60
108
53||1.1
2.8||2.5
kΩ||pF
GΩ||pF
4.90
4.5
4.75
50
250
V
V
V
mV
mV
mV
mA
TA = TMAX
IB
IOS
VIN
CMRR
AVO
VOH
VCM = 0.3 V to 4.7 V
0.5 V ≤ VOUT ≤ 4.7 V, RL = 2 kΩ
Short-Circuit Current
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current per Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
ISC
PSRR
ISY
VSY = ±1.25 V to ±2.75 V
IOUT = 0 mA, TA = TMAX
95
SR
GBP
3.5
Unity-Gain Crossover
−3 dB Closed-Loop Bandwidth
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
UGC
−3dB
ΦM
RL = 2 kΩ
VIN = 5 mV p-p, RL = 10 kΩ,
AV = 100
VIN = 5 mV p-p, RL = 10 kΩ, AV = 1
VIN = 5 mV p-p, AV = 1
VOL
en p-p
en
in
0.1 Hz to 10 Hz
f = 1 kHz
Rev. 0 | Page 4 of 7
Unit
μV
μV/°C
μV
nA
nA
V
dB
dB
0.35
RL = 10 kΩ to VCM
RL = 2 kΩ to VCM
RL = 2 kΩ to VCM, TA = TMAX
RL = 10 kΩ to VCM
RL = 2 kΩ to VCM
RL = 2 kΩ to VCM, TA = TMAX
VOUT = 0 V, TA = TMAX
Output Voltage Low
−40°C ≤ TA ≤ +210°C
Typ
Max
4.8
4.0
4.60
150
+200
30
4.7
200
350
350
+70/−11
100
1.0
1.2
dB
mA
5.0
9.7
V/µs
MHz
7.0
11.0
82
MHz
MHz
Degrees
0.13
4.2
0.6
µV p-p
nV/√Hz
pA/√Hz
Known Good Die
AD8634-KGD
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Supply Voltage
Input Voltage
Differential Input Voltage1
Output Short-Circuit Duration to GND
Storage Temperature Range
Operating Temperature Range
Junction Temperature
1
Rating
±18 V
V− ≤ VIN ≤ V+
±0.6 V
Indefinite
−65°C to +150°C
−40°C to +210°C
245°C
For differential input voltages greater than 0.6 V, limit the input current to
less than 5 mA to prevent degradation or destruction of the input devices.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. 0 | Page 5 of 7
AD8634-KGD
Known Good Die
PAD CONFIGURATION AND FUNCTION DESCRIPTIONS
V+
8
1
7
2
6
–
+
+
–
3
5
4
11524-002
V–
Figure 2. Pad Configuration and Functional Block Diagram
Table 4. Pad Function Descriptions 1
Pad No.
1
2
3
4
5
6
7
8
1
X-Axis (µm )
−566
−566
−566
−566
566
566
566
544
Y-Axis (µm )
330
227
−97
−377
−98
227
330
456
Mnemonic
OUT A
−IN A
+IN A
V− Pad
+IN B
−IN B
OUT B
V+
Description
Output Pad of Amplifier A.
Inverting Input Pad of Amplifier A.
Non-Inverting Input Pad of Amplifier A.
Negative Power Supply Pad. Substrate is connected to V−.
Non-Inverting Input Pad of Amplifier B.
Inverting Input Pad of Amplifier B.
Output Pad of Amplifier B.
Positive Power Supply Pad.
Die center is the reference location at 0.0 µm × 0.0 µm. Pad coordinates are to the center of each pad.
Rev. 0 | Page 6 of 7
Known Good Die
AD8634-KGD
OUTLINE DIMENSIONS
0.493
0.483
0.473
1.33
8
1
7
2
6
3
5
1.10
SIDE VIEW
TOP VIEW
(CIRCUIT SIDE)
0.07 × 0.07
06-27-2014- A
4
Figure 3. 8-Pad Bare Die [CHIP]
(C-8-3)
Dimensions shown in millimeters
DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS
Table 5. Die Specifications
Parameter
Chip Size
Scribe Line Width
Die Size
Thickness
Bond Pad
Bond Pad Composition
Backside
Passivation
1
Value
1240 × 1020
90 × 90
1330 × 1100
483
70 × 70
1.0 AlSi, 0.5AlCu
V- biased
Oxynitride
Unit1
µm
µm
µm
µm
µm
%
N/A
N/A
N/A means not applicable.
Table 6. Assembly Recommendations
Assembly Component
Die Attach
Bonding Method
Bonding Sequence
Recommendation
Epoxy Adhesive
Gold Ball or Aluminum Wedge
Bond Pin 1 First
ORDERING GUIDE
Model
AD8634-KGD-CHIP
Temperature Range
−40°C to +210°C
Package Description
8-Pad Bare Die [CHIP]
©2014 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D12314-0-7/14(0)
Rev. 0 | Page 7 of 7
Package Option
C-8-3