Room-temperature defect annealing
in n-type Si investigated by DLTS
J. H. Blekaa , E. V. Monakhova , B. S. Avsetb and B. G. Svenssona
a
Department of Physics, Physical Electronics, University of Oslo, Oslo, Norway
b
The Norwegian Radiation Protection Authority, Oslo, Norway
Supported by the Norwegian Research Council
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 1 / 11
Outline
Experimental details
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 2 / 11
Outline
Experimental details
Results
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 2 / 11
Outline
Experimental details
Results
Optimising the DLTS techniques
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 2 / 11
Outline
Experimental details
Results
Optimising the DLTS techniques
Further results and discussion
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 2 / 11
Outline
Experimental details
Results
Optimising the DLTS techniques
Further results and discussion
Summary
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 2 / 11
Experimental details
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
p + -n−-n+ Si diodes
0.3 mm
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 3 / 11
Experimental details
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
0.3 mm
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 3 / 11
Experimental details
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
ordinary diode processing
0.3 mm
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 3 / 11
Experimental details
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
ordinary diode processing
(submerged in 10% HF at 50 °C for
1
2
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
h)
0.3 mm
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 3 / 11
Experimental details
0.3 mm
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
ordinary diode processing
(submerged in 10% HF at 50 °C for
(annealed at 450 °C for 1 h in N 2 )
1
2
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
h)
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 3 / 11
Experimental details
0.3 mm
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
ordinary diode processing
(submerged in 10% HF at 50 °C for
(annealed at 450 °C for 1 h in N 2 )
6-MeV electron irradiation at RT:
5 × 1012 cm−2
1
2
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
h)
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 3 / 11
Experimental details
0.3 mm
p + -n−-n+ Si diodes
produced from high-purity
MCz wafers (5 × 1012 P/cm3 )
ordinary diode processing
(submerged in 10% HF at 50 °C for
(annealed at 450 °C for 1 h in N 2 )
6-MeV electron irradiation at RT:
5 × 1012 cm−2
oxygen concentration:
5–10 × 1017 cm−3
1
2
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
h)
Al
SiO2
p+
n−
5 × 1012 P/cm3
n+
7 mm
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 3 / 11
DLTS measurements
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
11
8×10
−1
Lock in, (640 ms)
MCz Si
175 h after irradiation
11
6×10
VO
11
4×10
V2(=/−)
E4
V2(−/0)
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
2×10
0
2nd CADRES Workshop 2006
100
150
Temperature/K
200
RT defect annealing in n-type Si – 4 / 11
DLTS measurements
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
VO
2×10
Lock in, (640 ms)
MCz Si
1
×
4
11
−1
175 h after irradiation
V2(=/−)
E4
V2(−/0)
11
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
1×10
0
2nd CADRES Workshop 2006
100
150
Temperature/K
200
RT defect annealing in n-type Si – 4 / 11
DLTS measurements
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
VO
2×10
Lock in, (640 ms)
MCz Si
1
×
4
11
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
11
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
1×10
0
2nd CADRES Workshop 2006
100
150
Temperature/K
200
RT defect annealing in n-type Si – 4 / 11
DLTS measurements
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
VO
2×10
Lock in, (640 ms)
MCz Si
1
×
4
11
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
11
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
1×10
0
100
150
Temperature/K
200
E4 anneals
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 4 / 11
DLTS measurements
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
VO
2×10
Lock in, (640 ms)
MCz Si
1
×
4
11
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
11
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
1×10
0
100
150
Temperature/K
200
E4 anneals
Amplitude of V2 (−/0) approaches amplitude of V2 (=/−)
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 4 / 11
DLTS measurements
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
VO
2×10
Lock in, (640 ms)
MCz Si
1
×
4
11
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
11
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
1×10
0
100
150
Temperature/K
200
E4 anneals
Amplitude of V2 (−/0) approaches amplitude of V2 (=/−)
[VO] increases
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 4 / 11
GS4 weighting function
Capacitance
C transients ⇒ DLTS spectrum:
T4
T3
T2
T1
T4>T3>T2>T1
0
1
Lock in
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
0
-1
Time window
Time
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 5 / 11
GS4 weighting function
Capacitance
C transients ⇒ DLTS spectrum:
The lock-in type weighting
function
is normally used:
−1 , 0 ≤ t < T2
fLI =
1 , T2 ≤ t < T
T4
T3
T2
T1
T4>T3>T2>T1
0
1
Lock in
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
0
-1
Time window
Time
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 5 / 11
GS4 weighting function
Capacitance
C transients ⇒ DLTS spectrum:
The lock-in type weighting
function
is normally used:
−1 , 0 ≤ t < T2
fLI =
1 , T2 ≤ t < T
The GS4 weighting function
resolves
 DLTS peaks better:T
1, 0 ≤t < 4



−25 , T4 ≤ t < T2
fGS4 =

48 , T2 ≤ t < 3T

4

3T
−24 , 4 ≤ t < T
T4
T3
T2
T1
T4>T3>T2>T1
0
1
Lock in
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
0
-1
50
Time window
Time
GS4
0
-50
Time
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 5 / 11
Lock in vs. GS4
(2 · DLTS signal · ND /(Cr · F2))/cm−3
11
8×10
MCz Si 175 h after irradiation
−1
11
6×10
Lock in, (640 ms)
(window 6)
150
Temperature/K
200
11
4×10
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
2×10
0
100
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 6 / 11
Lock in vs. GS4
(2 · DLTS signal · ND /(Cr · F2))/cm−3
11
8×10
MCz Si 175 h after irradiation
−1
Lock in, (640 ms)
11
6×10
−1
(window 6)
GS4, (640 ms)
(window 5)
150
Temperature/K
200
11
4×10
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
2×10
0
100
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 6 / 11
Concentration plots
12
10
Trap concentration/cm
−3
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
VO (Lock in)
V2(=/−) (Lock in)
V2(−/0) (Lock in)
11
10
E4 (GS4)
10
4.1 × 10
cm
−3
−7
−2.3 × 10
·e
−1
s
·t
10
10
0
2nd CADRES Workshop 2006
500
1 000
1 500
Annealing time/h
2 000
RT defect annealing in n-type Si – 7 / 11
Concentration plots
12
10
Trap concentration/cm
−3
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
VO (Lock in)
V2(=/−) (Lock in)
V2(−/0) (Lock in)
11
10
E4 (GS4)
10
4.1 × 10
cm
−3
−7
−2.3 × 10
·e
−1
s
·t
10
10
0
500
1 000
1 500
Annealing time/h
2 000
Amplitude of V2 (−/0) approaches amplitude of V2 (=/−)
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 7 / 11
Concentration plots
12
10
Trap concentration/cm
−3
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
VO (Lock in)
V2(=/−) (Lock in)
V2(−/0) (Lock in)
11
10
E4 (GS4)
10
4.1 × 10
cm
−3
−7
−2.3 × 10
·e
−1
s
·t
10
10
0
500
1 000
1 500
Annealing time/h
2 000
Amplitude of V2 (−/0) approaches amplitude of V2 (=/−)
First order annealing of E4
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 7 / 11
Concentration plots
12
10
Trap concentration/cm
−3
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
VO (Lock in)
V2(=/−) (Lock in)
V2(−/0) (Lock in)
11
10
E4 (GS4)
10
4.1 × 10
cm
−3
−7
−2.3 × 10
·e
−1
s
·t
10
10
0
500
1 000
1 500
Annealing time/h
2 000
Assume dissociation of E4 with a pre-factor C0 = 1013 s−1
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 7 / 11
Concentration plots
12
10
Trap concentration/cm
−3
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
VO (Lock in)
V2(=/−) (Lock in)
V2(−/0) (Lock in)
11
10
E4 (GS4)
10
4.1 × 10
cm
−3
−7
−2.3 × 10
·e
−1
s
·t
10
10
0
500
1 000
1 500
Annealing time/h
2 000
Assume dissociation of E4 with a pre-factor C0 = 1013 s−1
⇒ Dissociation barrier of 1.1(5) eV
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 7 / 11
Concentration plots
VO
V2(=/−)
V2(−/0)
y=x
y = −x
−3
10
Change in concentration/cm
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
4×10
10
2×10
0
10
−2×10
10
−4×10
0
2nd CADRES Workshop 2006
10
10
1×10
2×10
−3
Loss in E4 concentration/cm
10
3×10
RT defect annealing in n-type Si – 7 / 11
Difference of DLTS spectra
To detect small changes in defect concentrations:
Take the difference of two DLTS spectra
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
×1
4
VO
11
2×10
−1
Lock in, (640 ms)
MCz Si
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
11
1×10
0
100
150
Temperature/K
2nd CADRES Workshop 2006
200
RT defect annealing in n-type Si – 8 / 11
Difference of DLTS spectra
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
11
2×10
Lock in, (640 ms)
MCz Si
×1
4
VO
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
11
1×10
0
100
150
Temperature/K
2nd CADRES Workshop 2006
200
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
To detect small changes in defect concentrations:
Take the difference of two DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C175 h − C2 036 h
MCz Si
10
3×10
10
2×10
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
V2(=/−)
10
1×10
0
100
E4
150
V2(−/0)
200
Temperature/K
250
RT defect annealing in n-type Si – 8 / 11
Difference of DLTS spectra
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
11
2×10
Lock in, (640 ms)
MCz Si
×1
4
VO
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
11
1×10
0
100
150
Temperature/K
200
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
To detect small changes in defect concentrations:
Take the difference of two DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C175 h − C2 036 h
MCz Si
10
3×10
10
2×10
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
V2(=/−)
10
1×10
0
100
E4
150
V2(−/0)
200
Temperature/K
250
V2 (−/0) has an overlapping peak E5
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 8 / 11
Difference of DLTS spectra
11
(2 · DLTS signal · Nd /(Cr · F2))/cm−3
3×10
11
2×10
Lock in, (640 ms)
MCz Si
×1
4
VO
−1
V2(=/−)
175 h after irradiation
2 036 h after irradiation
E4
V2(−/0)
11
1×10
0
100
150
Temperature/K
200
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
To detect small changes in defect concentrations:
Take the difference of two DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C175 h − C2 036 h
MCz Si
10
3×10
10
2×10
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
V2(=/−)
10
1×10
0
100
E4
150
V2(−/0)
200
Temperature/K
250
V2 (−/0) has an overlapping peak E5
[E5] = [E4]
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 8 / 11
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
Difference of DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C78 h − C2 036 h
MCz Si
10
C499 h − C2 036 h
3×10
C1 111 h − C2 036 h
E5
10
2×10
V2(=/−)
10
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
1×10
0
100
2nd CADRES Workshop 2006
E4
150
V2(−/0)
200
Temperature/K
250
RT defect annealing in n-type Si – 8 / 11
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
Difference of DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C78 h − C2 036 h
MCz Si
10
C499 h − C2 036 h
3×10
C1 111 h − C2 036 h
E5
10
2×10
V2(=/−)
10
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
1×10
0
100
E4
150
V2(−/0)
200
Temperature/K
250
[E5] = [E4] at all annealing times
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 8 / 11
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
Difference of DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C78 h − C2 036 h
MCz Si
10
C499 h − C2 036 h
3×10
C1 111 h − C2 036 h
E5
10
2×10
V2(=/−)
10
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
1×10
0
100
E4
150
V2(−/0)
200
Temperature/K
250
[E5] = [E4] at all annealing times
E4: Ec − Et = 0.37 eV
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 8 / 11
Difference of (2 · DLTS signal · Nd /(Cr · F2))/cm
−3
Difference of DLTS spectra
10
4×10
−1
Lock in, (640 ms)
C78 h − C2 036 h
MCz Si
10
C499 h − C2 036 h
3×10
C1 111 h − C2 036 h
E5
10
2×10
V2(=/−)
10
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
1×10
0
100
E4
150
V2(−/0)
200
Temperature/K
250
[E5] = [E4] at all annealing times
E4: Ec − Et = 0.37 eV
E5: Ec − Et = 0.45 eV
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 8 / 11
Proton irradiation
High-purity, low-doped, FZ Si irradiated at RT with 7-MeV
protons to 4 × 1010 cm−2
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
Monakhov et al., Phys. Rev. B 65 (2002) 233207
2nd CADRES Workshop 2006
RT defect annealing in n-type Si – 9 / 11
Discussion
E4 and E5 always observed with the same concentration
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
high or low oxygen concentration
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
high or low oxygen concentration
hydrogenation
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
high or low oxygen concentration
hydrogenation
annealing prior to the irradiation
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
high or low oxygen concentration
hydrogenation
annealing prior to the irradiation
E4 and E5 are generated both by 6-MeV electrons and
7-MeV protons
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
E4 and E5 always observed with the same concentration
⇒ Two charge states of one defect?
E4 and E5 are not caused by
high or low oxygen concentration
hydrogenation
annealing prior to the irradiation
E4 and E5 are generated both by 6-MeV electrons and
7-MeV protons
Annealing of E4/E5 ⇒ Increased VO concentration
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
Hypothesis:
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y=V
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y = V ⇒ X = V2 O
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y = V ⇒ X = V2 O
2nd CADRES Workshop 2006
b
b
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y = V ⇒ X = V2 O
Y=I
2nd CADRES Workshop 2006
b
b
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y = V ⇒ X = V2 O
Y = I ⇒ X = VOI
2nd CADRES Workshop 2006
b
b
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
Y = V ⇒ X = V2 O
Y = I ⇒ X = VOI ?
2nd CADRES Workshop 2006
b
b
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Discussion
Hypothesis:
E4/E5 are energy levels of X, which dissociates in
X → Y + VO
b
b
Y = V ⇒ X = V2 O
Y = I ⇒ X = VOI ?
If E4/E5 is VOI, which dissociates to VO + I,
should the generation not depend on the oxygen
concentration?
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 10 / 11
Summary
Two defect levels, E4 and E5, generated by electron or
proton irradiation, anneal at RT
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 11 / 11
Summary
Two defect levels, E4 and E5, generated by electron or
proton irradiation, anneal at RT
E4 and E5 may be two charge states of the same defect
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 11 / 11
Summary
Two defect levels, E4 and E5, generated by electron or
proton irradiation, anneal at RT
E4 and E5 may be two charge states of the same defect
The annealing of E4 and E5 gives a corresponding
increase of VO
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 11 / 11
Summary
Two defect levels, E4 and E5, generated by electron or
proton irradiation, anneal at RT
E4 and E5 may be two charge states of the same defect
The annealing of E4 and E5 gives a corresponding
increase of VO
We see no obvious identification of E4/E5
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
RT defect annealing in n-type Si – 11 / 11
Summary
Two defect levels, E4 and E5, generated by electron or
proton irradiation, anneal at RT
E4 and E5 may be two charge states of the same defect
The annealing of E4 and E5 gives a corresponding
increase of VO
We see no obvious identification of E4/E5
LATEX
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stuwww.uvt.nl/˜hendri
2nd CADRES Workshop 2006
Outline
Experimental details
DLTS meas’ments
GS4 weighting func.
Lock in vs. GS4
Concentration plots
DLTS difference
Proton irradiation
Discussion
Summary
www.gnu.org
RT defect annealing in n-type Si – 11 / 11