Linear magnetoresistance in a high quality two-dimensional electron system
W. Pana,b,c , H.L. Stormerd,e , D.C. Tsuib , L.N. Pfeiffere , K.W. Baldwine , and K.W. Weste
a
Sandia National Labs, Albuquerque, NM 87185, USA
Princeton University, Princeton, NJ 08544, USA
c
National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA
d
Columbia University, New York, NY 10027, USA
e
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974, USA
b
In a high quality two-dimensional electron system of density n = 1 × 1011 cm−2 and mobility µ = 10 × 106
cm2 /Vs, at the temperature (T ) of 1.2K, the longitudinal magnetoresistance, Rxx , shows a strictly linear
dependence on the magnetic (B) field, except for sharp spikes at B-fields where the integer quantum Hall
effect (IQHE) develops. This linear dependence shows no saturation up to B ∼ 36 T. As T is lowered
to ∼ 35 mK, the feature of Rxx is dominated by multiple minima and peaks, due to the formation of
IQHE and fractional QHE states. However, the linear background remains. In fact, when plotting R xx
at the even-denominator fillings (ν = 1/4, 1/2, 3/4, and 3/2) as a function of B field, the same linear
magnetoresistance is recovered. We will discuss in details this linear dependence of R xx vs.B in terms of
the composite fermion model and the so-called resistivity rule Rxx ∝ B × dRxy /dB.
Sorting category: Db Conducting electrons in condensed matter
Keywords: 2DEG, magnetoresistance
INVITED PAPER
LT1854