Oated Systems Chaptr 2 ynchotro X- ay Studies, of Surface Chaper 3SemiondutorSurfate Studies Chaper Sinle lecton ransistors Chater5 Culob Bockde irnNarrow MOSFETs Chater6 Eitay Surface ad SepStructures on Semiconductor 110 RLE Progress Report Number 133 Chapter 1. Statistical Mechanics of Surface Systems Chapter 1. Statistical Mechanics of Surface Systems and Quantum-Correlated Systems Academic and Research Staff Professor A. Nihat Berker Graduate Students Daniel P. Aalberts, Alexis Falicov, William C. Hoston, Jr., Roland R. Netz Technical and Support Staff Imadiel Ariel 1 .1 Introduction Sponsor Joint Services Electronics Program Contract DAAL03-89-C-0001 Our objectives are (1) to produce predictive quantitative properties from first principles for surface systems and systems in which quantum correlations are important, (2) to deduce, using the renormalization-group method of statistical mechanics, broadly relevant properties of condensed matter, and to explore their application to systems of coupled electronic, structural, and magnetic degrees of freedom. In this research, fluctuation dominated - due to finite temperatures, impurities, and/or constrained environments properties are of paramount interest. Our recent results, detailed in the following sections, show that both objectives can be achieved. We are in the uniquely fortunate position of having integrated the finite-temperature renormalization-group expertise of our group with the electronic energy calculations of Professor Joannopoulos' group. Thus, microscopic theories can be produced that start with Schroedinger's equation and end with predictions directly observable in the laboratory. consequences for the growth of GaAs on Si(100), DL steps not disturbing the epitaxy conditions, while SL steps leading to undesirable antiphase domains. We have predicted, in the variables of temperature and crystal cut angle, a phase boundary between these two regimes, which has been quantitatively confirmed by experiments (figure 1). - SL a 0 no 0 DL 100 200 I 300 I ,- -f 400 500 600 TEMPERATURE 1.2 Finite-Temperature Properties of Vicinal Si(100) Surfaces In collaboration with Professor J.D. Joannopoulos, we have combined electronic energy calculations and finite-temperature statistical mechanics to study, for the first time, the equilibrium properties of the Si(100) surface. The occurrence of singlelayer (SL) or double-layer (DL) steps on these purposefully - misoriented surfaces has important a (K) Figure 1. Our calculated phase diagram of vicinal Si(100) in the variables of crystal cut angle and temperature. The solid curve is our theoretically predicted line of first-order phase transitions between the singlelayer (SL) and double-layer (DL) stepped surface phases. Open and solid bars represent experimental observations of SL and DL stepped surfaces. The bar at -2.5' in fact represents observation of a mixed phase of mostly DL steps! To conduct this work, we were able to formulate a new Hamiltonian for the temperature-roughened 111 Chapter 1. Statistical Mechanics of Surface Systems steps that embodied the accurate electronic calculations of the energies and that was amenable to statistical mechanics calculations. In addition to the phase diagram, which is consistent with new experimental data otherwise unexplained and which brings together into a coherent picture all the existing data on the domain structure of stepped Si(100), we have obtained the free energy, the entropy, as well as the step profiles (figure 2) which are in good agreement with experimental observations. For annealed surfaces, we find that the critical angle at which the transition between SL and DL stepped surfaces occurs is .2', also in agreement with experiment. Before we obtained these results, it was erroneously believed that vicinal Si(100) surfaces have only one equilibrium phase with only DL steps present! Our work has directly and immediately motivated a new set of (confirming) experiments. T= 400 K X SA 20 Figure 2. Our calculated step profile on Si(100) at 1 In our theory, straight steps degree misorientation. occur at the horizontal boundaries of the figure. This picture is in remarkable agreement with subsequent observations using scanning tunneling microscopy. 1.3 Impurity-Induced Critical Behavior Another recent theoretical prediction that we made using the renormalization-group method appears to have general and far-reaching consequences: We discovered that even an infinitesimal amount of randomness in interactions (e.g., distribution of defects), in surface systems, converts first-order phase transitions, characterized by discontinuities, to second-order phase transitions, characterized by infinite response functions. In bulk systems, a (calculable) threshold randomness is needed for this conversion to occur. This general prediction appears to be supported by experiments on doped KMnF 3 and by most recent computer simulations. 112 RLE Progress Report Number 133 More specifically, temperature-driven first-order phase transitions that involve a symmetry breaking are converted to second-order phase transitions by the introduction of infinitesimal bond randomness, 2 or d < 4 respectively in spatial dimensions d for systems composed of discrete or continuous Even strongly microscopic degrees of freedom. first-order transitions undergo this conversion to second order! Above these dimensions, this phenomenon still occurs, but requires a threshold amount of bond randomness. For example, under bond randomness, the phase transitions of q-state Potts models, widely encountered in the context of structural and magnetic transitions, are second order for all q in d < 2. If no symmetry breaking is involved, temperature-driven first-order phase transitions are eliminated under the above conditions. Another consequence of this phenomenon is that bond randomness drastically alters multicritical phase diagrams. For example, tricritical points and 2) or critical endpoints are entirely eliminated (d depressed in temperature (d > 2 for both discrete and continuous degrees of freedom). These predictions have been confirmed by a renormalization-group calculation. Similarly, bicritical phase diagrams are converted (d < 2) reentrant-disorder-line or decoupled-tetracritical phase diaThese quenched-fluctuation- induced grams. second-order transitions constitute a diametric opposite to the previously known annealedfluctuation-induced first-order transitions, and point to a multitude of new universality classes of criticality, including many experimentally accessible cases. This general result should have applications to crystals used as probing devices. These probing crystals are plagued by first-order phase transitions with non-equilibrium hysteresis loops. It would be useful to replace these transitions, via the controlled introduction of randomness (which, we think, could be achieved by crossed laser beams reflected from rough surfaces), by second-order phase transitions with large response functions. 1.4 Monte Carlo Mean-Field Theory and Frustrated Systems in Two and Three Dimensions We have recently developed a new method of statistical mechanics, merging the effective-field and Monte Carlo approaches. This method brings for the first time to effective-field theory the hard-spin condition, essential to (frustrated) spin systems with competing interactions, and uses much less This sampling then Monte Carlo simulation. method was successfully tested on frustrated Ising magnets in d=2 and 3, in zero and non-zero uniform fields. The phase diagram of the d=2 tri- Chapter 1. angular antiferromagnet was easily obtained with remarkable global quantitative accuracy. The phase diagram of the d=3 stacked triangular antiferromagnet was found to show three ordered phases, in a new finite-field multicritical topology of lines of XY, Ising, and 3-state Potts transitions, accessible to experiments with layered magnets. This result also explains for the first time critical exponents measured at zero field, via crossover phenomena. Our new method, thus applicable to frustrated system, will be developed towards frustrated quantum spins, which is relevant to high-temperature superconducting systems. 1.5 Quantum Systems One aim of our research program is to effect the statistical mechanics of quantum mechanical systems. We now report encouraging preliminary results. Progress is achieved by systematically mapping d-dimensional quantum mechanical systems onto (d+1)-dimensional classical systems, but with complicated many-body interactions. Figures 3 and 4 show our calculated results for chains of s=1/2 spins exchange-coupled via their x and y components (known as the XY magnet). Figure 3 shows that our successive approximations to the internal energy systematically and quickly converge to the exact result. Moreover, exact information available to-date on quantum systems is very limited and piecemeal. By contrast, the statistical mechanical solution of the (d+1) dimensional system in our procedure is an entire solution, providing every equilibrium property of the original quantum system. Thus, figure 4 shows the correlation function of the XY chain, for which no information had been available. Statistical Mechanics of Surface Systems I. A x 9 bx V 0.8 0.6 o04 0.2 I0. 30. 20. 40. 50. r Figure 4. Our calculated correlation functions of the quantum XY spin chain as a function of spin separation. The curves are for temperatures T = J/ks, 2J/kB, 3J/kB, and 5J/kB, where J is the exchange coupling constant. No exact result exists for the correlation function. We plan to extend our calculations to twodimensional quantum systems. One system of interest is the d=2 XY magnet, in which the occurrence of a distinctive algebraically ordered phase is controversial. Another system of interest is the d=2 triangular Heisenberg antiferromagnet, which is relevant to high-temperature superconductors. In the latter systems, the interplay of frustration and thermal vacancies is crucial. We believe that our previous work on frustrated triangular systems (Section 4 above) and on thermal vacancies will be helpful. By applying renormalization-group statistical mechanics, we should be able to include even the weak interplanar coupling of the real materials. The subsequent aim of our studies is to include both particle and spin degrees of freedom in considering quantum-mechanical electronic systems. Publications k8 T/J 0.5 I. 1.5 2. -0.5. -0.75- .-- -1.25 -1.5-1.75. -2. Figure 3. Internal energy of the quantum XY spin chain as a function of temperature. The upper curve is the exact result. The lower curves are our calculations of systematically improved approximations. Alerhand, O.L., A.N. Berker, J.D. Joannopoulos, D. Vanderbilt, R.J. Hamers, and J.E. Demuth. "Finite-Temperature Phase Diagram of Vicinal Si(100) Surfaces." Phys. Rev. Lett. 64 (20): 2406-2409 (1990). Alerhand, O.L., A.N. Berker, J.D. Joannopoulos, and D. Vanderbilt. "Phase Transitions on Misoriented Si(100) Surfaces." In 20th International Conference on the Physics of Semiconductors. Eds. E.M. Anastassakis and J.D. Joannopoulos. Singapore: World Scientific, 1990. Alerhand, O.L. "Equilibrium Properties of Steps on Si(100) Surfaces." Paper to be presented at the General Meeting of the American Physical 113 Chapter 1. Statistical Mechanics of Surface Systems Society, Cincinnati, Ohio, March 18-22, 1991. Bull. Am. Phys. 36(3): 587 (1991). Berker, A.N. "Harris Criterion for Direct and Orthogonal Quenched Randomness." Phys. Rev. B 42(13): 8640-8642 (1990). Alerhand, O.L., A.N. Berker, J.D. Joannopoulos, D. Vanderbilt, R.J. Hamers, and J.E. Demuth. "Alerhand et al. Reply." Phys. Rev. Lett. 66(7): 962 (1991). Hui, K., and A.N. Berker. "Random-Field Mechanism in Random-Bond Multicritical Systems." J. Appi. Phys. 67(9): 5991 (1990). of K. Hui. "Absence and Berker, A.N., Temperature-Driven First-Order Phase Transitions in Systems with Random Bonds." In Science and Technology of Nanostructured Magnetic Materials. Eds. G.C. Hadjipanayis, G. Prinz, and L. Paretti. New York: Plenum, 1990. McKay, S.R., and A.N. Berker. "Magnetization of the d-Dimensional Random-Field Ising Model: An Intermediate Critical Dimension." In New Trends in Magnetism. Eds. M.D. CoutinhoRezende. Singapore: World Filho and S.M. Scientific, 1990. Berker, A.N. "Quenched Fluctuation Induced Second-Order Phase Transitions." Paper to be presented at the General Meeting of the American Physical Society, Cincinnati, Ohio, March 18-22, 1991. Bull. Am. Phys. 36(3): 439 (1991). Netz, R.R., and A.N. Berker. "Monte Carlo MeanField Theory and Frustrated Systems in Two and Three Dimensions." Phys. Rev. Lett. 66(3): 377-380 (1991). 114 RLE Progress Report Number 133 Netz, R.R. Frustration in Magnetic, Liquid Crystal, and Surface Systems: Monte Carlo Mean-Field Theory. S.M. thesis, Dept. of Physics, MIT, 1991.