MMBT3906
PZT3906
C
C
E
E
C
B
C
TO-92
E
SOT-23
B
B
SOT-223
Mark: 2A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
Units
2N3906
625
5.0
83.3
*MMBT3906
350
2.8
**PZT3906
1,000
8.0
200
357
125
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
 2001 Fairchild Semiconductor Corporation
2N3906/MMBT3906/PZT3906, Rev A
2N3906 / MMBT3906 / PZT3906
2N3906
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
IBL
Base Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
V
ON CHARACTERISTICS
hFE
DC Current Gain *
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
60
80
100
60
30
0.65
300
0.25
0.4
0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
NF
Noise Figure
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 100 kHz
VEB = 0.5 V, IC = 0,
f = 100 kHz
IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ,f=10 Hz to 15.7 kHz
250
MHz
4.5
pF
10.0
pF
4.0
dB
SWITCHING CHARACTERISTICS
td
Delay Time
VCC = 3.0 V, VBE = 0.5 V,
35
ns
tr
Rise Time
IC = 10 mA, IB1 = 1.0 mA
35
ns
ts
Storage Time
VCC = 3.0 V, IC = 10mA
225
ns
tf
Fall Time
IB1 = IB2 = 1.0 mA
75
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
250
V CE = 1 .0V
125 °C
200
150
25 °C
100
50
0.1
- 40 °C
0.2
0.5 1
2
5
10 20
I C - COLLECTOR CURRE NT (mA)
50
100
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
- 40 °C
0.8
25 °C
125 °C
0.6
0.4
0.2
0
1
10
100
I C - COLLECTOR CURRE NT (mA)
200
V CESAT - COLLECTOR EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
VBE( ON)- BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)
h F E - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
β = 10
0.25
0.2
0.15
25 °C
0.1
125°C
0.05
0
- 40 °C
1
1
0.8
- 40 °C
125 °C
0.4
= 25V
0
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
10
C obo
CAPACITANCE (pF)
I CBO - COLLE CTOR CURRENT (nA)
V CE = 1V
0.2
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
10
1
0.1
0.01
25
25 °C
0.6
100
CB
200
Base Emitter ON Voltage vs
Collector Current
Collector-Cutoff Current
vs Ambient Temperature
V
10
100
I C - COLLECTOR CURRENT (mA)
50
75
100
TA - AMBIE NT TEMP ERATURE (° C)
125
8
6
4
C ibo
2
0
0.1
1
REVERSE BIAS VOLTAGE (V)
10
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
6
12
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
V CE = 5.0V
5
4
3
I C = 100 µA, R S = 200Ω
2
I C = 1.0 mA, R S = 200Ω
1
I C = 100 µA, R S = 2.0 kΩ
0
0.1
1
10
f - FREQUENCY (kHz)
V CE = 5.0V
f = 1.0 kHz
10
I C = 1.0 mA
8
6
4
I C = 100 µA
2
0
0.1
100
1
10
R S - SOURCE RESISTANCE ( kΩ )
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
500
500
ts
tf
10
I B1 = I B2 =
tr
Ic
t off
100
TIME (nS)
100
t on I
B1 =
Ic
10
t on
VBE(OFF) = 0.5V
10
Ic
t off I = I =
B1
B2
10
10
td
1
1
10
I C - COLLECTOR CURRENT (mA)
1
100
1
I
10
- COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
TIME (nS)
100
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
TEMPERATURE (o C)
125
150
100
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Input Impedance
Voltage Feedback Ratio
)
10
100
h ie - INPUT IMPEDANCE (k Ω)
_ 4
h re - VOLTAGE FEEDBACK RATIO (x10
(continued)
10
1
0.1
1
I C - COLLECTOR CURRENT (mA)
1
0.1
0.1
10
1
I C - COLLECTOR CURRENT (mA)
10
Current Gain
1000
V CE = 10 V
f = 1.0 kHz
500
h fe - CURRENT GAIN
h oe - OUTPUT ADMITTANCE ( µmhos)
Output Admittance
1000
VCE = 10 V
f = 1.0 kHz
100
V CE = 10 V
f = 1.0 kHz
200
100
50
20
10
0.1
1
I C - COLLECTOR CURRENT (mA)
10
10
0.1
1
I C - COLLECTOR CURRENT (mA)
10
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
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PowerTrench 
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SILENT SWITCHER 
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2. A critical component is any component of a life
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be reasonably expected to cause the failure of the life
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support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G