Optical Interconnects at the Chip and Board Level – Challenges and Solutions David V. Plant and Andrew G. Kirk McGill University Montreal, Quebec, Canada (plant@photonics.ece.mcgill.ca) May 15, 2003, Stanford University Acknowledgements: McGill Photonic Systems Group Dr. Mani Sundaram, TeraConnect CITR D.V. Plant 1 System interconnect hierarchy Inter-rack Network Element Intershelf Inter-site Network Elements Long-haul Inter-board Inter-chip D.V. Plant Central office 2 Outline ¾Bandwidth limitations of electrical interconnects ¾Optical interconnect insertion points ¾10 Gbps products ¾Free-space optical interconnects ¾Convergence/divergence ¾Conclusions D.V. Plant 3 Problem statement • Electrical interconnects do not have sufficient bandwidth to meet the interconnection requirements of future telecommunications and computing systems. • Short distance interconnects will benefit from an optical solution. • Multiple groups pursuing solutions: – Telecommunications equipment manufacturers – Computing systems manufacturers – Storage/disk farms D.V. Plant 4 Limitations of electrical interconnects (D.A.B.Miller and H.M.Ozaktas, J.Parallel Distrib. Comput., 41, pp 42-52, 1997) • As data rates increase, electrical interconnects are limited by: – Power – Distortion – Cross-talk – Pin-out capacity • Fundamental: aspect ratio limit: Bmax ≤ 1016 × D.V. Plant A l2 l A (bit/s ) 5 Opportunities for optical interconnects Longhaul LAN/WAN Racks/chassis VSR optical interconnects 1mm 1cm 10cm 1m 10m 100m 1km CWDM and TDM: λ, time muxing (single mode fiber, multimode fiber) D.V. Plant 10km 100km 1000km DWDM: λ, time muxing (single mode fiber) 6 VSR application: intra-office (D. Goodwill, Nortel Networks) • 2 to 300 meter interconnect • 10 Gbps D.V. Plant 7 VSR optical interconnect technology requirements 9Interconnect opaque elements 9Large aggregate data rates (10, 40, 100 Gpbs) 9Multiple distance possibilities (2m to 10 km) 9Low power (< 3 W/10 Gbps) 9Standardized interfaces (electrical and optical) 9Low cost (~$100/Gbps) D.V. Plant 8 Enabling VSR technologies • Vertical Cavity Surface Emitting Lasers (VCSELs) • Fiber (single/multi-mode) • Connectorized optical interfaces • Standardized electrical interfaces D.V. Plant 9 VCSELs • Optical cavity oriented normal to wafer. • Current injection is efficient, slope efficiencies are high, and threshold currents are very low (sub 100 µA reported in late 1990s). • AlGaAs-GaAs (850 nm) VCSELs are available at low cost. • Current research on 1.3µm and 1.55µm devices. D.V. Plant 10 VCSEL merits ¾ Inexpensive (Honeywell 850nm VCSEL $10) ¾ Bandwidths of 10Gbps at threshold currents of mA’s ¾ Wafer testable prior to doing any packaging ¾ Post-processing of mirrors not required ¾ Two-dimensional arrays available 1-D array 2-D array D.V. Plant 11 Fiber types Single mode fiber Distance r Multimode fiber (GRIN) Distance r Core diameter Core diameter 0 0 Refractive index n D.V. Plant • Step index core • Core diameter 8-10 µm • Bandwidth-length product limited by chromatic dispersion • Reach at 10 Gbps > 10’s of km Refractive index n • Gradient refractive index (GRIN) core • Core diameter 50/62.5 µm • Bandwidth-length product limited by intermodal dispersion • Reach at 10 Gbps ≈ 60 m at 850 nm 12 VSR driver: 10 Gig Ethernet standards (http://grouper.ieee.org/groups/802/3/ae/index.html) • 3 Serial: – 850 nm, 2m – 300m on high performance multi-mode fiber – 1310 nm, 2m – 10km on standard single mode fiber – 1550 nm, 2m – 40km on standard single mode fiber • 1 Parallel: – 4 wavelengths in the 1310 nm window (1269nm – 1355nm); 2m – 300m on MMF; 2m – 10km on SMF • Current products use 850nm VCSELs and 1310nm DFBs; 1310nm VCSELs coming on fast. D.V. Plant 13 VCSEL based 10 Gbps optical module (D. Kabal and M. Ayliffe, Picolight) • Applications: – 10 Gigabit Ethernet (WAN and LAN) – OIF VSR OC-192 – Router interconnection – Computer cluster cross connects • Low power: < 6 W • 0 to 70 C • 2 – 300 meters • 50/125 µm MMF D.V. Plant 14 10.7 Gpbs 850 nm VCSEL (D. Kabal and M. Ayliffe, Picolight) D.V. Plant 15 Data rate (Gb/s) Current products: channels vs. data rate 10000 10000 1000 1000 100 100 40 Gbps to follow 10 10 1 10 Gbps 1 D.V. Plant 1 10 100 1000 Number of channels 10000 16 System interconnects Inter-rack Network Element Intershelf D.V. Plant Network Elements Long-haul Inter-board Inter-chip Inter-site “Inside the box” Central office 17 Opportunities for optical interconnects Longhaul LAN/WAN Racks/chassis Inter-shelf 2-D VSR optical interconnects Inter- Board Inter- Chip 1mm 1cm 10cm 1m 2D SDM & TDM: space, time muxing (FSOI, parallel fiber) D.V. Plant 10m 100m 1km CWDM & TDM: λ, time muxing (single mode fiber, multimode fiber) 10km 100km 1000km DWDM: λ, time muxing (single mode fiber) 18 2-D Free Space Optical Interconnects OE-VLSI ASIC OE devices (>2000/cm2) Optics • Free Space Optical Interconnect (FSOI) bandwidths achieved through Time Division Multiplexing (TDM) and Space Division Multiplexing (SDM). • Connection densities >2000 connections/cm2 at > 1Gbps per connection. • OE-VLSI ASIC baseline functions: Electrical-to-Optical (E-O); Optical-toElectrical (O-E); Optical-to-Electrical-to-Optical (O-E-O) data conversion. D.V. Plant 19 Application: free-space optical backplane D.V. Plant 20 Application: chip-to-chip/board-toboard (1999 edition, http://public.itrs.net) International Technology Roadmap for Semiconductors Year of Introduction Technology node 1999 180 nm 2003 120 nm 2005 100 nm 2008 70 nm 2011 50 nm 2014 35 nm Density (M/cm2) 24 78 142 350 863 2,130 Chip size (mm2) 450 567 662 713 817 937 1,250 2,490 3,500 6,000 10,000 13,500 Off-chip high-speed pins 700 1,500 1,900 2,300 2,700 3,000 Off-chip speed (MHz) 600 862 1,000 1,250 1,500 1,800 On-chip clock (MHz) (Data for high-performance market segment) D.V. Plant 21 Application: chip-to-chip/board-toboard (1999 edition, http://public.itrs.net) International Technology Roadmap for Semiconductors Year of Introduction Technology node 1999 180 nm 2003 120 nm 2005 100 nm 2008 70 nm 2011 50 nm 2014 35 nm Density (M/cm2) 24 78 142 350 863 2,130 Chip size (mm2) 450 567 662 713 817 937 1,250 2,490 3,500 6,000 10,000 13,500 Off-chip high-speed pins 700 1,500 1,900 2,300 2,700 3,000 Off-chip speed (MHz) 600 862 1,000 1,250 1,500 1,800 On-chip clock (MHz) ‘No known solution’ D.V. Plant 22 Data rate (Gb/s) Chip-to-chip requirements 10000 10000 1000 1000 5 Tbps (2014) 100 40 Gbps 10 1 On-chip clock (13.5 Gbps) Off-chip bus (1.8 Gbps) 10 Gbps 1 D.V. Plant 100 10 1 10 100 1000 Number of channels 10000 23 2-D VSR optics: open issues • Total interconnect capacity • Number of channels/data rate per channel • Length • Optoelectronics • Optics D.V. Plant 24 Starting Assumptions • 2D VCSELs and photodiodes arrays @ 850 nm, mW’s. PCB Optoelectronic receiver array • OED Pitch: 125 µm • CMOS, SiGe, UTSi electronics • Interconnect distances: 5 – 100 mm • FSOI optical interconnect insertion loss < 3 dB D.V. Plant Optical interconnect Optoelectronic transmitter array VLSI circuit Low speed electrical connections 25 Optoelectronic-VLSI Multichip TXER module CMOS chip Driver VCSEL Array Heterogeneous integration OE-VLSI Increased parallelism Reduced power dissipation D.V. Plant 26 ASIC #1) 256 VCSEL/PD OE-VLSI ASIC (D.V. Plant et al, JLT, 19, 2001) 10mm x 10 mm, 0.35 µm TSMC CMOS D.V. Plant 27 Designed as Network Interface Chip (a) (b) D.V. Plant OEO operation at a) 250 Mbps; b) 400 Mbps. • Pitch within cluster: 125µm • Cluster pitch: 750 µm • 2844 channels/cm 2 • Performed 3 functions: EO, O-E, and O-E-O 28 ASIC #2) 1080 VCSEL/PD OE-VLSI ASIC (M.B. Venditti et al, in press, JSTQE, 2003) Receiver Array Digital Section Transmitter Array 14.6 x 7.5 mm 0.25 µm TSMC CMOS (5 metal, single poly, n-well) D.V. Plant 29 Signal Processing Functions • Transceiver/ transponder • Clock acceleration • Parallel Forward Error Correction (FEC) • On chip data generation (testing) D.V. Plant 30 Test and Verification Toggle Blink Random Close-up D.V. Plant 31 OE-VLSI ASIC Comparison ASIC #1 ASIC #2 Optical I/O 256 (single ended) 540 (differential) Electrical I/O 32 (single ended) 128 (single ended) Transceivers Single ended Fully differential Total power dissipation (calculated) ~ 100 mW/ch ~ 35 mW/ch Connection density 2844 chs/cm2 6800 chs/cm2 Number of functions Transceiver & transponder Transceiver/transponder; clock acceleration, FEC, self-test D.V. Plant 32 Optically Interconnected PCBs OE-VLSI ASIC ~ 1 inch separation • Backplane OE-VLSI ASICs perform: – E-O, O-E, and O-E-O data conversion – Backplane level signal processing functions such as a) address recognition, b) clock acceleration, c) FEC D.V. Plant 33 Chip-to-Chip Interconnect 3 inch separation • Forms basis of technologies to be discussed: – VCSELs/PDs & heterogeneous integration – OE-VLSI ASICS (transceivers, layout, signal processing) – Packaging and optics D.V. Plant 34 2-D VSR optical interconnects: design choices • Critical design parameters: Throw – Optical throw – Number of channels – Array area – Misalignment tolerance – Source characteristics Area Misalignment tolerance • These cannot all be optimized independently D.V. Plant 35 Optical relay choices Microchannel • Short throw (diffraction limited) • Simple lenses • Tight lateral tolerances Clustered (minilens) • Longer throw • More complex optical design • Improved lateral tolerances Macrolens • Maximum throw • Stresses field of view • Aberration-limited D.V. Plant 36 Optical relay choices Clustered (minilens) • Longer throw • More complex optical design • Improved lateral tolerances D.V. Plant 37 Design for misalignment tolerance • Misalignment results from manufacturing and assembly errors • Systems designed to be tolerant to misalignment • Calculate the impact of misalignment on performance 8-f optical relay D.V. Plant 38 Design for misalignment tolerance • Misalignment results from manufacturing errors, assembly • Systems should be tolerant to misalignment • Calculate the impact of misalignment on performance • What happens when all components are misaligned ? ÆA Monte-Carlo simulation is required 8-f optical relay D.V. Plant 39 Modularization • Typically systems have components that have critical alignment tolerances • This requires that the system is assembled as a series of modules • Each module is comprised of components that must be mutually aligned with care – tight tolerance • Ideally the modules can then be assembled with passive mechanical alignment – loose tolerance D.V. Plant 40 Example: 512 channel optical board to board link 12.5 µm tolerance Minilens Relay system Prism IC VCSEL cluster D.V. Plant Prism Glass spacer Microlens array Detector cluster • • • • 86 mm throw 3x6 mm active area 256 channels (bidirectional) Æ Clustered optical design 2.5 µm tolerance (M. Châteauneuf et al, Optics in Computing 2001, pp.64-66.) 41 512 channel parallel optical board to board link Minilens Relay system Prism IC VCSEL cluster D.V. Plant Prism Glass spacer Microlens array Detector cluster • • • • 86 mm throw 3x6 mm active area 256 channels (bidirectional) Æ Clustered optical design 90 µm tolerance (M. Châteauneuf et al, Optics in Computing 2001, pp.64-66.) 42 Assembly and packaging • Module assembly techniques include: – Interferometric techniques – In situ alignment techniques – Active alignment • Module integration requires molded or machined features D.V. Plant 43 Packaging challenge and solutions Machined frame Alignment lenses Ceramic spacers Relay lenses Mechanical alignment features D.V. Plant Microlens array Relay block 44 Completed 256 channel bidirectional system* D.V. Plant *M. Châteauneuf et al, Optics in Computing 2001, pp.64-66. 45 Opportunities for optical interconnects Longhaul LAN/WAN Racks/chassis Inter-shelf 1D, 2D VSR optical interconnects Inter- Board Inter- Chip 1mm 1cm 10cm 1m 2D SDM & TDM: space, time muxing (FSOI, parallel fiber) D.V. Plant 10m 100m 1km CWDM & TDM: λ, time muxing (single mode fiber, multimode fiber) 10km 100km 1000km DWDM: λ, time muxing (single mode fiber) 46 VSR optical interconnect requirements 10000 10000 1,2-D Fiber 2-D FSOI 1000 Data rate (Gb/s) 1000 5 Tbps 100 On-chip clock (13.5 Gbps) 40 Gbps 10 Xanoptix 10 Gbps Off-chip bus (1.8 Gbps) Teraconnect 1 2-D fiber 1 D.V. Plant 100 10 10 1 McGill/CITR 100 1000 Number of channels 10000 47 Convergent challenges ¾VCSELs with low threshold currents (Ith) ¾Low loss optical interconnect ¾Low power consumption ¾Non-amplified link ¾Low cost D.V. Plant 48 Divergent challenges Parameter Data rate per channel Length Telecomm 10 – 100 Gbps Computing 1 – 10 Gbps Interconnect topology Meters to kilometers Moderate & 1D (100’s connections) Optical medium Fiber (SM/MM) Connectorization Electrical interface Yes Serial/de-serial Millimeters to meters High and 2D (100’s to 1000’s of connections) 2-D; FSOIs, parallel fiber Desirable Directly from ASIC D.V. Plant 49 Conclusion Inter-rack Network Element Intershelf Inter-board D.V. Plant Network Elements Long-haul Mature (10 GigE) Inter-chip Inter-site Research Very mature Central office • Optical interconnects continue to penetrate systems • New solutions for shorter reaches required 50 References 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) D.V. Plant Kirk, A.G., D.V. Plant, M. Ayliffe, M. Chateauneuf, and F. Lacroix. Design rules for highly parallel free-space optical interconnects. In press, IEEE Journal of Selected Topics in Quantum Electronics, (2003) [invited]. Venditti, M.B. and D.V. Plant. On the design of large receiver and transmitter arrays for OE-VLSI applications. Submitted to IEEE/OSA Journal of Lightwave Technology, December (2002). Venditti, M.B., E. Laprise, J. Faucher, P-O. Laprise, J.E. Lugo, and D.V. Plant. Design and test of an optoelectronic-VLSI chip with 540element receiver/transmitter arrays using differential signaling. In press, IEEE Journal of Selected Topics in Quantum Electronics, (2003). Kirk, A.G., D.V. Plant, T.H. Szymanski, Z.G. Vranesic, F.A.P. Tooley, D.R. Rolston, M.H. Ayliffe, F. Lacroix B. Robertson, E. Bernier, and D. F.-Brosseau. Design and implementaion of a modulator based free-space optical backplane for microprocessor applications. In press, Applied Optics, (2003). Faucher, J., M.B. Venditti, and D.V. Plant. Design and implementation of forward error correction for 2-dimensional parallel optical data links (2D-ODLs). IEEE/OSA Journal of Lightwave Technology, in press (2003). Chateauneuf, M., A.G. Kirk, D.V. Plant, T. Yamamoto, J.S. Ahearn, and W. Luo. 512-channel vertical cavity surface emitting laser based free-space optical link. Applied Optics 41: 5552-55561 (2002). Lacroix, F., E. Bernier, M.H. Ayliffe, F.A.P. Tooley, D.V. Plant, and A.G. Kirk. Implementation of a compact, four stage, scalable optical interconnect for photonic backplane applications. Applied Optics 41: 1541-1555 (2002). Ayliffe, M.H., M. Chateauneuf, D.R. Rolston, A.G. Kirk, and D.V. Plant. Six-degrees-of-freedom alignment of two-dimensional array components using in-situ off-axis diffractive structures. Applied Optics 40: 6515-6526 (2001). Plant, D.V., M.B. Venditti, E. Laprise, J. Faucher, K. Razavi, M. Chateauneuf, A.G. Kirk, and J.S. Ahearn. 256-channel bidirectional optical interconnect using VCSELs and photodiodes on CMOS. IEEE/OSA Journal of Lightwave Technology 19: 1093-1103 (2001). Ayliffe, M.H., D.R. Rolston, A. Chuah, E. Bernier, F.S.J. Michael, D. Kabal, A.G. Kirk, and D.V. Plant. Design and testing of a kinematic package supporting a 32x32 array of GaAs MQWs flip-chip bonded to a CMOA chip. IEEE/OSA Journal of Lightwave Technology 19: 1543-1559 (2001). Venditti, M.B., E. Laprise, J. Faucher, P.-O. Laprise, J. S. Ahearn, and D. V. Plant. Design and verification of an OE-VLSI chip with 1080 VCSELs and PDs heterogeneously integrated with CMOS. Proc. IEEE/LEOS 2001 Annual Meeting, PD-1.4. (2001). Plant, D.V. and A.G. Kirk. Optical interconnects at the board and chip level: Challenges and solutions. Proceedings of the IEEE 88: 8896 (2000) [invited]. Maj, T., A.G. Kirk, D.V. Plant, J.F. Ahadian, C.G. Fonstad, K.L. Lear, K. Tatah, M.W. Robinson, and J.A. Trezza. Interconnection of a two-dimensional array of Vertical Cavity Surface Emitting Lasers (VCSELs) to a receiver array by means of a fiber image guide. Applied Optics 39: 685-689 (2000). 51