Fakulti:
FAKULTI KEJURUTERAAN ELEKTRIK
Nama Matapelajaran: Makmal Mikroelektronik
Kod Matapelajaran : SEW 4722
Semakan
Tarikh Keluaran
Pindaan Terakhir
No. Prosedur
:1
: 2013
: 2013
: PK-UTM-FKE-(0)-10
SEW 4722
FAKULTI KEJURUTERAAN ELEKTRIK
UNIVERSITI TEKNOLOGI MALAYSIA
KAMPUS SKUDAI
JOHOR
MICROELECTRONICS LABORATORY
STUDENT PACK
Optimization of MOSFET electrical characteristics using TCAD
Tools
Disediakan oleh
Nama
:
: Dr. Suhana Mohamed
Sultan
Disahkan oleh : Ketua Jabatan
Nama
: Dr. Shaikh Nasir Shaikh Husin
Tandatangan
Cop
:
:
Tandatangan
Cop
:
:
Tarikh
: 9 September 2013
Tarikh
:
1.
Problem/Project Guide:
(a) Problem-solving Time-line
You must know theoretically the fabrication processes of a typical semiconductor device. In order to be
familiarized with the TCAD simulation tool, refer to the manuals which are available in the lab and online.
Silvaco's ATHENA is used to simulate the processing conditions for the formation of the device. This will be
followed by device characteristics (analogous to electrical testing of the device) using ATLAS tool. The simulation
exercise is divided into 3 parts:
(1) Understanding the current process simulation given and plot the electrical characteristics (Id-Vg,Id-Vd).
(2) Designing by adding or modifying the current process to attain the target values of the
parameters:Threshold voltage , ION/IOFF ratio and Subthreshold Swing.
(3) Extract the characteristics of the device structure and do the cross sections on the device due to parameter
changes.
The objective of the first part is to study the process flow of an n-MOSFET, characterize the electrical
characteristics and observe the depletion mode characteristics.
The second part is aimed at modifying the current process in ATHENA to observe any changes in the device
characterstics without changing the device dimensions.
The third part is to analyze the characteristic change using MOSFET theory.
As a guide, you should follow the time-line below:
(a) Problem-solving Time-line
Activities
1. Understand theory & problem, familiarize with tool,
get started with NMOS process simulation
2. Process Simulation, do device characteristics, IV graphs
3. Introduce new process step to solve problem. Check if
problem solved. Otherwise go back to process simulation.
4. Demo/Presentation/Report Writing
Week 1
Week 2
Week 3
Week 4
(b) Report Writing
Other than the general guide specified by laboratory coordinator, your report must include
1.
Brief discussion of theory and problems
2.
Proposed solution. Please include your processing input script.
3.
Specified plots-IV plot, doping profiles etc.
4.
Conclusion
2.
Software:
Silvaco International
3.
Additional resources:
(a) Silvaco Manuals can be obtained from the lab itself or online (www.engr.sjsu.edu/~dparent/Silvaco/athena.pdf)
4.
References:
[1]
S.M.Sze, VLSI Technology, 2nd Edition, McGraw-Hill Book Company, 1988
[2]
N. Arora,MOSFET Models for VLSI Circuit Simulation, Springer-Verlag,1993