Synthesis of GaN nanowires Doped with Silicon
Ji Liu*, Xiang-Min.Meng, Yang Jiang, Chun-Sing Lee, Igor Bello,
and Shuit-Tong Lee
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Material Science,
City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong, Hong Kong, SAR, China
e-mail: liuji2000@yahoo.com
Tel:852-27844366
In our report, we describe the successful synthesis of high quality GaN nanowires
doped with silicon. The high-quality GaN nanowires doped with silicon has been
synthesized by hot filament chemical vapor deposition on Si (100) wafers coated with
Au, which grows according to the island-like catalytic growth process.
Results are summarized as follows:
The morphology of GaN nanowires was observed by scanning electron microscopy
(SEM, Philips XL 30 FEG), the microstructure of the nanowires was investigated by
transmission electron microscopy (TEM, Philips CM20), it is shown that the GaN
nanowires have a uniform diameter around 10nm and possess a typical hexagonal
wurtzite structure with a growth direction of [001]. Meanwhile, the optical property
was studied by fluorescence spectrophotometer (Perkin-Elmer LS50B,
Buckinghamshire UK) presenting a distinct blue shift of emission peak at 344nm due
to the quantum confinement effect referencing to the bulk GaN. Raman scattering
spectrum was examined by micro-Raman system (Renishaw 200) and the X-ray
Diffraction spectrum was studied by Siemens D-500 X-ray diffract meter.
TOPICS + KEYWORDS: GaN nanowires , optical property. PREFERENCE: Poster