Power and Ground Routing
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Power Planning
• New technologies:
Great power budget
Dense power grids
• Reasons:
Power supply scales more slowly than Moore’s law
− Current supplied to chip increase
Market demands for functionality
Up to 20%-40% of metal resources for P&G nets!
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• Intel’s 45 nm process
Routing Layers
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Metal Layers
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Power Planning
• Power planning:
1. Power routing
2. Placement of power supply IO pads (or bumps)
− Preferably near highly active regions
− minimize IR drop
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P&G Distribution
• P&G distribution for a custim chip floorplan
G V G V
Power and ground rings per block or abutted blocks
G V G V G V
Trunks connect rings to each other or to top-level power ring
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Supply Nets
• Supply nets characteristics:
Large
Span across the entire chip
Routed before any signal
Use top two metal layers
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Supply Net Widths
• Wire widths:
Must be adjusted to accommodate their respective estimated branch currents
• Logic gates:
Net segment width: IR drop < 5% VDD
− Wider segments: lower voltage drop
− Sometimes: < 10% VDD (5% for VDD, 5% for Gnd)
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Types of Power Planning
− Only two supply nets are present
− A cell needs a connection to both supply nets
− In most modern chips
− Compensates for IR drops
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Planar Routing
Step 1: Planarize net topology
As both power and ground nets must be routed on one layer
− Split the design using Hamiltonian path
Step 2: Layer assignment
Assign net segments to appropriate layers
Step 3: Determine widths of net segments
A segment ’s width ∝ ∑currents from all the cells to which it connects
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Planar Routing
1.
Planarize net topology:
Hamiltonian path:
− allows both supply nets to be routed across the with no conflicts
Gnd enters from left, VDD from right
GND VDD
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Planar Routing
1.
Planarize net topology:
Both nets grow in a tree-like fashion
Separated by Hamiltonian path
Exact routes depend on the pin locations.
− Cells are connected wherever a pin is encountered.
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Planar Routing
2.
Layer assignment to nets based on:
Routability
Resistance and capacitance of each available layer
Design rule information
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GND
Planar Routing
• Determine widths of net segments
Based on maximum current flow: KCL
VDD
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Planar Routing
• For large currents
Designers extend the “width” of the “planar” route in the vertical dimension with superposed segments on multiple layers that are stapled together with vias.
• Width determination: iterative process current Timing & noise IR drop
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Mesh Routing
Step 1: Creating a ring
Surround the entire core area of the chip, and possibly individual blocks
Connects supply I/O cells
Electrostatic discharge protection structures
May use all layers (except metal1) low resistance
Power rail
Ring
Pad
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Mesh Routing
Step 2: Connecting I/O pads to the ring
Each I/O pad: a number of
“fingers”
Should be maximally connected to the power ring
− On each of several metal layers low resistance
Power rail
Connector
Ring
Pad
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Step 3: Creating a mesh
Mesh Routing
A set of stripes at defined pitches on two or more layers
Power rail Width and pitch:
− From power consumption
− And design rules
In pairs:
− Alternating VDD-Gnd, Gnd-VDD
Layers:
Connector
− Upper most (thickets)
− Sparser at lower layers (to avoid signal routing congestion)
Ring
Pad
Mesh
Vias:
− Stripes on adjacent layers: connected with as many vias as possible
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VDD
VDD GND
GND
Mesh Routing
Step 4: Creating Metal1 rails
where P&G network meets cells.
Width and pitch:
− Determined by std-cell library
Std-cells laid out backto-back
− share rails
Power rail
VDD
GND
VDD
GND
Ring
Pad
Connector
Mesh
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Mesh Routing
Step 5: Connecting the Metal1 rails to the mesh
Power rail
Connector
Ring
Pad
Mesh
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Mesh Routing
Power rail
Connector
M1
Ring
Pad
Mesh
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M1 to M3: for signal routing
M4 to M8: for power routing
(2-layers in practice)
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Metal4 mesh
M1
Mesh Routing
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Metal6 mesh
1
Metal5 mesh
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Metal7 mesh
4
Metal8 mesh
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Metal1 rail
VDD
Metal4 mesh
GND
Metal4 mesh
Metal4
Via3
Metal3
Via2
Metal2
Via1
Metal1
GND rail
VDD rail
M1-to-M4 connection
Metal6
Via5
Metal5
Via4
Metal4
M4-to-M6 connection
Metal8
Via7
Metal7
Via6
Metal6
M6-to-M8 connection
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