Better CMP Cleaning Solutions Surfactanized Metal Inhibitors, Oxygen Scavengers and a New Particle Remover By Geoffrey Yuxin Hu, PhD, Brizon Inc Lily Yao, PhD, Western Digital Technologies Inc March 19 2014 CMPUG 2014 San Jose Introduction Challenge of CMP in IC and HD Background Classic Principle of CMP Process New Concepts of Slurry Chemistry and Formulation Outlet Fab Experimental Data and Results Future Developments Summary Acknowledgment March 19 2014 CMPUG 2014 San Jose Challenge Poor uniformity of the slurry on the pad Macro- and micro- scratching Residual slurry particles, Al2O3, Colloid SiO2 etal Trace metals and ions (Cu, Ni, Fe) Recontamination Poor re-rinsibility Etching, Corrosion ( aggressive chemicals, high or low pH, and oxidation) March 19 2014 CMPUG 2014 San Jose Background Unbalanced of Hydrophilic/Hydrophobic of Surfactants Poor Vehicle of Slurry Poor uniformity of slurry on the pad Poor Surface modification on particles, such as SiO2 Aggregation of particles Wide distribution of particles Macro- and micro- scratching Poor re-rinsibility Residual slurry particles, Al2O3, Colloid SiO2 March 19 2014 CMPUG 2014 San Jose Background Micro incompatible of Metal Inhibitors/Oxygen Scavengers Un-uniform dispersion of inhibitors in the solution Corrosion of metal Recontamination Aggressive chemicals at high or low pH Corrosion Macro- or micro- scratching Poor re-rinsibility March 19 2014 CMPUG 2014 San Jose Classic Principle Higher pH (>10) Better removal of particles, specially BTA Corrosion on metal? Ni, Fe and Cu? Classic Non-ionic Surfactants (NIS) Removing particles Removing organic contaminations Ionic Surfactants (IS) Aliphatic phosphorous surfactants Metal surface protection Residual mono-layer Chelating/Complex Chemicals Cleaning/removing metal ions and oxides March 19 2014 CMPUG 2014 San Jose New Concepts Surfactanized Metal Inhibitors Hydrophilic metal inhibitor on one side Short aliphatic hydrophobic tail Maximized protection on metal, Ni, Fe and Cu Surfactanized Oxygen Scavenger Long ethoxylated hydrophilic tail Hydrophobic oxygen scavenger Max scavenged oxygen in whole CMP process Special Surfactants Ethoxylated hydrophilic tail Short hydrophobic chain with chelate agent Not ethylenediamine series Much better vehicle for particles, Al2O3, SiO2, etc Optimized and Balanced Hydrophobic/Hydrophilic Media March 19 2014 CMPUG 2014 San Jose Components Special Non-ionic Surfactants Mixed Surfactanized Metal inhibitors And Oxygen Scavenger agents Additional Metal inhibitors And Oxygen Scavenger agents Surfactanized Chelating agents Particle removing agents March 19 2014 CMPUG 2014 San Jose How it works Hydrophilic Metal inhibitor head Aliphatic Hydrophobic tail Briteclean-0+ Briteclean-0+ : Briteclean-1 = 1:1 In 50X aqueous dilution + Ethoxylated Hydrophilic Tail Anti-oxidant Hydrophobic Head Briteclean-1 Briteclean-0+ : Briteclean-1 = 1:1 Bulk solution Phase separation March 19 2014 CMPUG 2014 San Jose Application in a fab Briteclean-0+ and Briteclean-1 blended 1:1 at a total concentration of 1.0 – 2.0% in aqueous media Slurry applied: in MH837/MH834/MH814 (Cabot) Pad applied: IC1000 (white pad --- Rodel/(Rohm Haas) Sub IV (black pad --- Rodel (Rohm Haas)) Tool platforms Applied: 8" Mirra (Applied Materials); 8" Ebara (Ebara); 8" 6DS-SP(Strausbaugh) Wafer: Cu, Ni/Fe/Co, Low key and Al2O3 March 19 2014 CMPUG 2014 San Jose Briteclean Products Briteclean – 0+ Briteclean - 1 Briteclean-ACP Pre/Post Cleaning Process YES YES YES Slurry Additives YES YES YES Storage/Buffer NO NO YES Need to mix Need to mix with BC-0+ Alone 1% - 5% 1% - 5% 1% - 4% Application with BC-1 or BC-ACP Concentration March 19 2014 CMPUG 2014 San Jose Briteclean Application 8.5 8 7.85 7.5 7.2 7 6.8 6.5 pH 6.3 5.5 5 0 100% BriteClean-1 10 20 30 40 50 60 70 Diluted 50X in DI H2O 80 90 100 100% BriteClean-0+ Recommended Usage: Briteclean-0+/Briteclean-1 = 1:1 Diluted to 1%-5% with DI H2O March 19 2014 CMPUG 2014 San Jose AFM Cu Plated Wafer BriteClean Mixture Average Roughness(N=3x3): Rms=0.29nm Competitor’s Cleaning Solution Average Roughness(N=3x3): Rms=0.34nm Roughness and surface residues are reduced March 19 2014 CMPUG 2014 San Jose SEM Cu Plated Wafer BriteClean Mixture Competitor’s Cleaning Solution SEM Cu Plated Wafer Slurry only Slurry + Brizon products March 19 2014 CMPUG 2014 San Jose Different Slurry Cleanability BriteClean vs Competitor Particle Count BriteClean Cleaning Solution Con-1 Con-2 Alumina -70 -22 NiFe -66 -340 Competitor Cleaning Solution Con-1 Con-2 Alumina 190 1571 NiFe 280 370 March 19 2014 CMPUG 2014 San Jose Particle counts BriteClean Cleaning Solution Alumina NiFe NiFe Post Cleaning (PostPre) Tool-1 259 268 9 Tool-2 692 640 -52 Tool-3 675 123 -552 Tool-4 207 78 -129 Competitor Cleaning Solution Alumina Initial (Pre-) Initial (Pre-) Post Cleaning (PostPre) Tool-1 477 1445 968 Tool-2 891 3065 2174 Tool-3 133 528 395 Tool-4 500 845 345 March 19 2014 CMPUG 2014 San Jose Layer X CMP Comparison Briteclean Application repeatability Wafer ID Existing Slurry 1 2 3 4 5 6 7 8 Mean Metal ALO Thickness Metal WIW Thickness Oxide WIW Added (FEI)-O Sigma-O (Nano)-O Sigma-O Paticles 261 7.3 267 10.2 217 257 8.1 261 8.2 198 265 2.4 273 3.6 229 263 8.3 268 9.4 363 251 6.1 261 7.5 107 278 5.9 283 6.9 267 255 6.9 267 8.1 271 263 7.2 267 7.8 400 Mean Std. Dev. 3 Sigma 261.63 7.60 22.79 6.53 1.75 5.24 268.38 6.61 19.84 7.71 1.84 5.52 256.50 86.85 260.55 278 251 27 8.3 2.4 5.9 283 261 22 10.2 3.6 6.6 400 107 293 Max. Min. Range Mean Metal Thickness (FEI)-O Wafer ID with Brite Additives 1 2 3 4 5 6 7 8 Mean Metal ALO Thickness Metal WIW Thickness Oxide WIW Added (FEI)-B Sigma-B (Nano)-B Sigma-B Paticles 263 3 249 2.7 30 251 4 267 2.1 0 265 4.2 253 3 139 256 2.9 263 1.9 271 258 3.1 262 2.4 0 261 3.3 262 2.9 225 260 4.1 261 2 57 266 2.8 265 2.5 68 Mean Std. Dev. 3 Sigma 260.00 4.64 13.91 3.43 0.54 1.63 260.25 5.72 17.15 2.44 0.39 1.16 98.75 96.27 288.82 266 251 15 4.2 2.8 1.4 267 249 18 3 1.9 1.1 271 0 271 Max. Min. Range Metal WIW Sigma-O Mean Metal Thickness (FEI)-B Metal WIW Sigma-B 9 285 280 8 275 7 270 6 265 5 260 4 255 3 250 245 2 240 1 235 0 1 2 3 4 5 6 ALO Thickness (Nano)-O 7 8 9 10 1 2 3 4 5 6 7 8 9 10 ALO Thickness (Nano)-B Oxide WIW Sigma-O 290 Oxide WIW Sigma-B 12 280 10 270 8 260 6 250 4 240 2 230 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 March 19 2014 CMPUG 2014 San Jose New Developments Briteclean-0+ More effective and efficiency cleaning Now in production in WD Briteclean-Cu Only for Cu plated wafer High pH value >10 Novel agent for particle removal March 19 2014 CMPUG 2014 San Jose Summary Briteclean mixture maximizes CMP efficiency Uniformity Particles, metals No recontamination Much improved surface roughness New designed chemistry Surface protection Much easier process Mixture system No need to change processes March 19 2014 CMPUG 2014 San Jose Acknowledgement NCCAVS Western Digital Brizon Inc www.brizon.net March 19 2014 CMPUG 2014 San Jose