Lecture-1 - Scott Thompson


From Leading-Edge Advanced CMOS to

Nanotechnology Devices


EEL 4329 / EEL 5934

FALL 2006

Instructor Prof. Scott Thompson

535 Engineering Bldg

846-0320 thompson@ece.ufl.edu

Office hours: M, W, F 7 th period

(plus email for more)

MWF 8 th period / NEB 102

What is Moore’s Law


Fall 2006 ECS S.E. Thompson

Moore’s Law

According to Moore:

• ~ 0.7X linear scale factor

• 2X increase in density / 2 years

• Lower cost

• Higher performance (~30% / 2 years)

• At severe competitive disadvantage if don’t have newer technology

• Has been going on for 40 years and will continue “somewhat” for another decade

Fall 2006 ECS S.E. Thompson

1 st signs of this being no longer valid is some markets




Processors in:

1993 1994 1995 1997 1998 1999


0.8µm 0.6µm 0.35µm 0.35µm 0.25µm 0.18µm

Fall 2006 ECS S.E. Thompson


This class will expose the student to state of the art technology issues and industrial team problem solving. The class will provide links between the short-term topics, which will certainly be in production during the next 10 years such as nanoscale MOSFET, strained Si, high k gates to farreaching topics, which are well ahead or off the main stream, offering high Potential . Some of these topics will include carbon nanotubes, molecular electronics and single electron devices for logic applications.


Fall 2006 ECS S.E. Thompson


• At present silicon technology is “IT” however

Moore’s Law will slow over the next decade and will have a profound effect on industry and university business and engineering jobs. The slowing should not be viewed as an end just a new phase in the

$300B microelectronic industry were the rules of business change.


Fall 2006 ECS S.E. Thompson



Fall 2006 ECS S.E. Thompson

Gordon Moore on Moore’s Law and the future of Microelectronics


• Show Moore video

– Interviews by Grove, Barret, Mead

• Discussion of key takeaways

Fall 2006 ECS S.E. Thompson


• Grading: Homework/team project assignments and team project.

• Exams 85%

• 25% Exam 1: Sept 27

• 25% Exam 2: Nov 3

• 35% Final exam (Dec 12 10am – 12)

• 15% homework/real world semiconductor team research project

• Class divided into ~ 10 groups

• 5 – 10 min group periodic report out

• Final report

• Part peer evaluation


Fall 2006 ECS S.E. Thompson

Text book:

Nanoelectronics and Information Technology


Plus many handouts on CD ROM

Fall 2006 ECS S.E. Thompson



Basic knowledge of semiconductor physics and devices (EEL 3396 or eq.). The class will be introductory and targeted towards students with a diverse background from electronics to material science. The class will be designed to introduce

CMOS, non classical CMOS, and post CMOS device concepts without a quantum mechanical background.

Fall 2006 ECS S.E. Thompson

Course Outline

Week 12: Moore’s Law and microelectronic industry trends

Week 3: Logic device: State of the Art for a Si MOSFET

Week 4: Requirements for a logic device replacement

Week 5-6: CMOS devices limits: quantum-statistical

Week 7-11 Post CMOS logic device

- Multi-Gate CMOS

- Carbon nanotubes

- High level overview of Quantum Transport Devices

- Single electron devices for Logic applications

- Spintronics

Midterm exam: Oct 20th

Week 12-14 Memory devices

DRAM, ferroelectric, magneto resistive, and phase change RAM

Week 16: December 8th and 10th

Final exam: when scheduled by college

Fall 2006 ECS S.E. Thompson



Course Material

• Week 1-6

• 1.1: Introduction class / Video

– 1.2: short 300mm fab vide: Moore on Moore’s law

– 1.3: Intel’s view on nanotechnology High level overview

2.1: IBM view on nanotechnology

2.2 Taur/Isaac papers to put the material in perspective

– 2.3 State of the art: MOSFET

– 3.1: Holiday

– 3.2: How work report out

– 3.3: How strain works / band structure and strain

– 4-6: Requirements and limits of devices

Equations and mathematics

Fall 2006 ECS S.E. Thompson

CLASS / Team Project (assigned Mid Year)

• Compare post CMOS replacement device options to the MOSFET (most successful device technology)

• Which if any post CMOS device options should the microelectronics focus on as a MOSFET replacement?

• Recommendation should be based

– Historical and projected future MOSFET trends.

– On quantum, statistical mechanics, and device limits.

– Potential advantage of post CMOS device option.

– Class homework will help shape project

– Suggestions: Start with a good literature search. Use excellent free service of electronic journals on-line. Use

Mathlab for calculations and graphs.

• Group divided into 10 Teams

Fall 2006 ECS S.E. Thompson


Homework 1:






OX n+

Sourc Drai e n

• Why has GaAs or 3-5 devices not “taken off”

• Include

– Early history of GaAs—find interesting quotes (see who can find the best quotes) on GaAs potential

– What markets is GaAs used today

– What is it not replaceing CMOS

• Expectation

– Present 6-7 ppt slides for a “professional” presentation to class

– ~1 page report with references

– Due Sep 11 th

Can pick your own groups ~4-6 people/group

Fall 2006 ECS S.E. Thompson

Course Material (papers provided on CD)

Week 1:

• Silicon MOSFET – Novel materials and

Alternative concepts Ch-13 text book pages


– (Skip operation of MOS capacitor / High K deposition

• Isaac paper: The Future of CMOS

• Taur CMOS design near the limit of scaling

• EEtimes nano technology article

Week 2:

• Denard: Design of ion implanted MOSFET

• Sustaining Moore’s Law and the US Economy

Week 3:

• Intel 90nm Strained silicon

Fall 2006 ECS S.E. Thompson


Course Material (papers on CD)

Week 4-6:

• Miendl- low power microelectronics

• Limits to a binary switch

• Book pages 323-357 (skip biological system)

Week 7-11:

• Book chapters 19, 16

• Single electron devices and their application

• Spintronics: a spin based electronics vision for the future

Week 12-16:

• Book chapters 21-23

• Introduction to flash memory


Fall 2006 ECS S.E. Thompson


• Class attendance required. Class attendance/participation used to decide “close” grades

(i.e. A or B+?)

• No make-up exam/homework unless very good reason.

See me. Will be handled on case by case basis

• Student with disability: Students requesting classroom accommodation must first register with the

Dean of Student Office. The Dean of Students Office will provide documentation to the student who must then provide this documentation to the instructor when requesting accommodations.

• Expect on time to class. No cell phones

• University honesty policy


Fall 2006 ECS S.E. Thompson

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