q = +e
q = -e
v
B
v
B
B
F = qvB
F = qvB
(a)
(b)
A moving charge experiences a Lorentz force in a magnetic field. (a) A
positive charge moving in the x direction experiences a force downwards. (b)
A negative charge moving in the -x direction also experiences a force
downwards.
Fig 2.17
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
IL
Wattmeter
IL
Load
VL
Source
RL
VL
IL
IL
C
C
V
VH
Bz
w
R
VL
Ix = VL/R
Wattmeter based on the Hall effect. Load voltage and load current
have L as subscript. C denotes the current coils. for setting up a
magnetic field through the Hall effect sample (semiconductor)
Fig 2.18
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
M7
M6
Low
permittivity
dielectric
M5
M3
Cu
interconnects
M2
M4
M3
M2
M1
M1
Silicon
Metal interconnects wiring devices on a silicon
crystal. Three different metallization levels M1,
M2, and M3 are used. The dielectric between the
interconnects has been etched away to expose the
interconnect structure.
Cross section of a chip with 7 levels of
metallization, M1 to M7. The image is
obtained with a scanning electron microscope (SEM).
|SOURCE: Courtesy of IBM
|SOURCE: Courtesy of Mark Bohr, Intel.
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Three levels of interconnects in a flash memory chip. Different levels are connected
through vias.
|SOURCE: Courtesy of Dr. Don Scansen, Semiconductor Insights, Kanata, Ontario, Canada
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Hall effect in a rectangular material with length L, widthW, and thickness D.
The voltmeter is across the width W.
Fig 2.40
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)