TEACHING ARCHIVESTIEI
Course Description (for 2014)
Course Description
Tianjin International Engineering Institute
Course Name(Chinese): 半导体器件
(English): Semiconductor Devices
Course Name: Semiconductor Devices
Course Code:
Semester: 1
Credit:
Programme: Electronic
Course Module: Specialized Subjects
Responsible: Xu Jiangtao
E-mail: xujiangtao@tju.edu.cn
Department: School of Electronic Information Engineering
Time Layout (1 credit hour = 45 minutes)
Practice
Lecture
Lab-study
6
12
14
Project
Internship(days)
Personal Work
30
Course Resume
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Semiconductor Physics: Physics and Properties of Semiconductors-A Review
Device Building Blocks: p-n Junctions; Metal-Semiconductor Contacts;
Metal-Insulator-Semiconductor Capacitors.
Transistors: Bipolar Transistors; MOSFETs; JFETs, MESFETs, and MODFETs;
Negative-Resistance and Power Devices: Tunnel Devices; IMPATT Diodes; TransferredElectron and Real-Space-Transfer Devices; Thyristors and Power Devices;
Photonic Devices and Sensors: LEDs and Lasers; Photodetectors and Solar Cells; Sensors.
Pre-requirements
semiconductors physics
Course Objectives
The foundation of the electronics industry is the semiconductor device. To meet the
tremendous demand of this industry, the semiconductor-device field has also grown rapidly. The
aim of this course is to give a comprehensive introductory of semiconductor device and
operational principles, including such topics as semiconductor physics, device building blocks,
transistors, negative-resistance and power devices, photonic devices and sensors.
After learning this course, students will be able to earn knowledge and understanding about
theories, concepts and application of classic devices and many sections that are of contemporary
interest such as the three-dimensional MOSFETs, non-volatile memory, modulation-doped
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TEACHING ARCHIVESTIEI
Course Description (for 2014)
field-effect transistor, single-electron transistor, resonant-tunnelling diode, insulated-gate bipolar
transistor, quantum cascade laser, semiconductor sensors.
Course Syllabus
1. Introduction
2. Device Building Blocks
2.1 p-n Junctions
2.2 Metal-Semiconductor Contacts
2.3 Metal-Insulator-Semiconductor Capacitors.
3 .Transistors
3.1 Bipolar Transistors
3.2 MOSFETs
3.3 JFETs, MESFETs and MODFETs
4 .Negative-Resistance and Power Devices
4.1 Tunnel Devices
4.2 IMPATT Diodes
4.3Transferred-Electron and Real-Space-Transfer Devices
4.4 Thyristors and Power Devices
5 .Photonic Devices and Sensors
5.1 LEDs and Lasers
5.2 Photodetectors and Solar Cells
5.3 Sensors
Text Book & References
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Required: S. M. Sze and Kwok K. Ng, Physics of Semiconductor Devices(3ed),WILEY. 2006
We may also use readings from a few textbooks:
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Ben G. Streetrnan, Sanjay Kumar Banerjee, Solid State Electronic Devices (6ed), PHI Learning.
2009
Robert F. pierret, Semiconductor device fundamentals, WILEY 1996
Chenming C. Hu ,Modern Semiconductor Devices for Integrated Circuits, Prentice Hall. 2010
Capability Tasks
CT1
CT2
CT3
CT7
CT10
Achievements
To understand the principle of operation of the PN junction, T. Bipolar and FET - Level: M
To know the impact of physical and geometrical parameters on the performance - Level: A
To design the basic circuits in MOS technology (ie reversers) - Level: A
Students: Electronic year 1
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