DEPARTMENT OF ELECTRICAL ENGINEERING
ELEG 6123 – Advanced Semiconductor Devices
1- Department, number, and title of course:
Electrical Engineering
ELEG 6123
Advanced Semiconductor Devices
2- Instructor Information:
Dr. Daniel Bullock
Office: Corley 261
Phone: (479) 968-0335
Email: dbullock@atu.edu
Website: http://faculty.atu.edu/dbullock/
3- Course Designation:
Optional
4- Course (catalog) description:
Prerequisite: ELEG 3003 and ELEG 4103 or permission of the instructor. An in depth
overview of coverage of semiconductor devices and materials. The course presents and
examines semiconductor fundamentals required in the operational analysis of
microelectronic devices.
5- Textbook:
Ben G. Streetman and Sanjay K. Banerjee, Solid State Electronic Devices, Prentice Hall,
6th Edition, 2006. ISBN: 9780131497269.
6- Bibliography:
Advanced Semiconductor Fundamentals, Vol. VI in the Modular Series on Solid State
Devices, 2nd Edition, R. F. Pierret, Prentice-Hall, 2003, ISBN No. 0-13-061792-X.
Semiconductor Device Fundamentals, R. F. Pierret, Addison-Wesley, 1996, ISBN No. 0201-54393-1.
Physics of Semiconductor Devices, 3rd Edition, S.M. Sze and K.K. Ng, Wiley
Interscience, 2007, ISBN No. 978-0-471-14323-9.
7- Justification/Rationale for the course:
This course in electronic devices has two basic goals: (1) to provide students with a
sound understanding of existing devices, so that their studies of electronic circuits and
systems will be meaningful; and (2) to develop the basic tools with which they can later
learn about newly developed devices and applications.
8- Course learning outcomes / expected performance criteria.
The successful student should be able to:
1. Explain the different techniques used to make semiconductor materials/devices.
2. Understand some of the basic properties of crystals.
3. Use Schrodinger’s Equation to solve basic problems related to semiconductor devices.
4. Explain the effect carrier concentration has on device performance.
5. Understand the physics involved in p-n junction based devices.
6. Explain the operation of various Field Effect Transistors (FETs).
7. Explain the operation of the Bipolar Junction Transistors (BJTs).
8. Understand the operation of various optoelectronic devices.
9- Topics covered.
1. Crystal properties and growth of semiconductors. (a) (j)
2. Modern Physics (a) (e) (g) (j)
3. Energy Bands and Charge Carriers in Semiconductors (a) (e)
4. Excess Carriers in Semiconductors (a) (e)
5. Junctions (a)
6. Field-Effect Transistors (a) (e) (k)
7. Bipolar Transistors (a) (e) (k)
8. Optoelectronic Devices (a) (e) (g) (j) (k)
10- Class / Laboratory schedule:
2 lecture sessions per week, 50 minutes per session
Assigned work from the web
11- Contribution of course to meeting the requirements of Curriculum (Criterion 5)
Engineering Topics – 3 Credit Hours
12- Relationship of Course to Program Outcomes
a
S
b
c
d
S – Strong
13- Evaluation Methods:
Quizzes - 30%
Homework – 10%
Presentations – 10%
Mid-Term Test - 25%
Final Exam- 25%
14- Assessment:
e
S
f
M – Medium
g
M
h
W – Weak
i
j
W
k
M
A
B
C
D
F
90 – 100%
80 – 89%
70 – 79%
60 – 69%
Below 60%
15- Course Policies:
Absence Policy*:
Students will be dropped from the course with an F* after three
unexcused absences. If not dropped from the class, grade will be lowered one letter for
each three absences, excused or non-excused.
Academic Dishonesty Policy*: Cheating or plagiarism is not tolerated and repercussions
will range from a grade of zero on the assignment to expulsion from the university.
Academic Misconduct Policy*: Disruption of teaching is not tolerated and repercussion
will range from a verbal warning to expulsion from the class.
Make Up Tests: Make-up tests will be administered from 3:00 – 5:00 p.m. on Fridays by
appointment and only for excused absences. Tests must be taken within 6 weekdays of
the original date of the test. Make-up quizzes are not available.
*Please refer to the Student Handbook p. 10-20
(http://www.atu.edu/currentstudents.shtml) and the Faculty Handbook pages 74-79
(http://www.atu.edu/stuserv/files/StudentHandbook.doc Section 4) for definitions and
clarification of these policies.
16- Person(s) who prepared this description and date of preparation
Daniel Bullock, August, 2010.