EE 327 Theory and Design of IC Devices I

EE 327 Theory and Design of IC Devices I
Designation: Required
Catalog Description: Band structure models and carrier transport physics review. Theory and
design of semiconductor IC device: Schottky diodes, bipolar devices (PN junctions, BJTs),
FETs (MOSFETs, JFETs, and MESFETs). Pre: EE 324 and MATH 243.
Credits: 3
Pre-and Co-requisites: EE 324: "Physical Electronics, " and MATH 243: “Calculus III.”
Class/Lab Schedule: 3 lecture hours per week
Topics Covered:
Review of semiconductor physics (3 - 6 hrs)
Schottky Diodes (5 - 6 hrs)
PN Junctions (7 - 9 hrs)
Bipolar Junction Transistors (9 hrs)
Field Effect Transistors (9 hrs)
Introduction to LEDs and Junction lasers (Optional-1 hr)
Class presentations (Optional)
Text Book and Other Required Materials: “Device Electronics for Integrated Circuits”
(second edition), Muller and Kamins; or “Semiconductor Physics and Devices: Basic
Principles” (third edition), Donald A. Neaman.
Course Objectives and Their Relationship to Program Objectives:
A student should understand (i) the fundamental principles of operation of junction diodes,
Schottky diodes, bipolar junction transistors and metal-oxide-semiconductor field effect
transistors, (ii) the issues and criteria in designing the above devices in silicon, and (iii) the
general relationships between device performance and the choice of semiconductor material,
such as silicon and compound semiconductors. A student should also develop a conceptual
understanding of other field-effect devices, such as JFETs and MESFETs, and time-permitting,
will learn the basics of LEDs and junction laser diodes [Program objectives of this course
addresses: A, B, and D.]
Course Outcomes and Their Relationship to Program Outcomes:
The following are the course outcomes and the subset of Program Outcomes (numbered 1-11 in
square braces "[ ]") they address:
Ability to formulate and solve ambipolar transport and diffusion equations, using differential
calculus, under different boundary conditions for semiconductor devices [1]
Understand the fundamental differences between silicon and compound semiconductors and
their applications in electronic and optoelectronic integrated circuits [5,10]
Design of simple integrated circuit devices, such as on-chip resistors, PN junction diodes, or
bipolar junction transistor to meet a specific need. [3,5]
Develop an appreciation of device scaling and rapidly changing technology. [9,10]
Develop effective oral communication skills, either through active class participation or
through formal presentations. [7]
Encourage the use of modern software tools to solve mathematical problems. [11]
Contribution of Course to Meeting the Professional Component
Engineering Topics: 100%
Computer Usage:
The use of computers in the class is not required, however, its use is encouraged to help solve
problems whenever analytical solutions are not possible or difficult to obtain.
Design Credits and Features:
EE 327 has 1 design credit. About 15 to 20% of the homework assignments are related to design
of a device, or effects of fundamental design parameters on the overall performance of the
devices. In addition, the lectures are presented in a format and style to encourage creative
thinking, while at the same time illustrating the application of fundamentals in the ‘design’ of
desired device properties.
Person(s) Preparing Syllabus and Date: V. Malhotra , March 2003.