On semiconductor www.onsemi.com 1 Q2 04 ON Solutions for Cellular Phones Baseband (DSP, MCU & Memory) Package Roadmap RF/IF Power Management Flash Light OLED driver RF Detector Audio Amplifier DC-DC Buck Boost LDO uP Reset Supervisory USB & SIM Interface Charge Pump PM ASIC Voltage Detector FET PA Driver RF Modulation ESD+EMI filter LCD Display MotorDriver Duplexer White LED Driver PA Display Synthesizer Receiver Megapexial Camera Charge control Audio Standard components Charge Controller Key PAD Bottom Connector SIM&MMC Interface Pass Elements USBInterface OP amplifier TVS/Zener Comparator Transistor MiniGateTM Logic BRTs Analog Switches Micro Integration Onsemi solution Not Onsemi’s Schottky diode 2 www.onsemi.com ON Solutions for Cellular Phones Baseband (DSP, MCU & Memory) Battery Charger RF Inner Battery Charger NCP1800 NTHD4P02 NTHD3101 (or NTGS3441T1 +MBRM120LT3) SIM Card Interface Reset DC/DC Converter Controller LDO (Baseband) LDO(RF) PA controller NCN6000 NCN6010 NCP1501 NCP300~5 NCP1510/1 MAX809/810 MBRM120 NCP500, 511 (150mA); NCP512 (80mA) NCP4523,MC78PC NCP4561, MC33761/2 MC33170 RF Power Detector NCS5000 Over-voltage Protection IC MC33765 (5 outputs) SIM/ SMART Card NCP345/6 White LED Driver Audio Amp for Speaker & Polyphonic Ringer NCP5007 NCP1403 MBR0520LT1 NCP2890 NCP4894 NCP4896 * (Black) Analog products * (Blue) Integrated Power (TVS, Filter, Driver, MOSFET) • (Green) Standard Components • (Italic) New products Stereo Audio Amp for MP3 Headset MicroIntegrationTM Vibrator Drivers NCP5426 MDC3105 NUD3105 TVS array Driver SMS05/15/24 SM12 NZQA5V6 MSQA6V1 NSQA6V8 1PMT16A SMS05/12/24C SMF05/12/24C MUN series DTA series DTC series MDC3105 NCP2809 3 Mini-gate Logic Analog Switch MC74VHC1Gxx MC74HC1Gxx NL17SZxx NL27WZxx NLAS4599 NLAS44599 NLAS4501 NLAS323/4/5 Filter Small signal MOSFET NZF220DF NZF220TT STF202-22 NZMM7V0T4 NUF6105 MBRM120 MBR0520 MMBT35200 NSR15WT1 NTGS3441/3 NTHS2101 NTJD4105 NTR4101 www.onsemi.com TVS vs Varistors ESD protection comparison 安森美半导体、变阻器和竞争者的ESD响应比较 Condition 1: Applied 8kV ESD contact pulse using a high frequency test board (Low inductance, ideal case). 状况1:使用高频测试板施加8kV ESD 接触脉冲(低电感,理想状况)。 Input: 8KV ESD Pulse, IEC 61000-4-2 Output: Varistor, VA-C1005-5R5E 输入: 8KV ESD脉冲, IEC 61000-4-2 输出:变阻器,VA-C1005-5R5E Conversion Factor: 转换因子: V = “X “ [(2/267)*(0.1)*(0.5)] V = 7.98KV High clamping Voltage (35V) 高钳位电压(35V) / 5V/di v Output: ON Semiconductor, MSQA6V1 输出:安森美半导体, MSQA6V1 Output: Competition, SMF05 输出:竞争者,SMF05 Clamping Voltage (8V) 钳位电压(8V) Low clamping Voltage (7V) 低钳位电压(7V) 5V/di v 5V/di v 4 www.onsemi.com TVS vs Varistors ESD protection comparison 安森美半导体、变阻器和竞争者的ESD响应比较 Condition 2: Applied 8kV ESD contact pulse using a normal test board (Inductance =10nH, real board case) 状况2:使用正常测试板施加8kV ESD 接触脉冲(电感=10nH,真实状况)。 Input: 8KV ESD Pulse, IEC 61000-4-2 输入: 8KV ESD脉冲, IEC 61000-4-2 Conversion Factor: 转换因子: V = “X “ [(2/267)*(0.1)*(0.5)] V = 7.98KV Output: Varistor, VA-C1005-5R5E 输出:变阻器,VA-C1005-5R5E High clamping Voltage (40V) 高钳位电压(40V) / 5V/div Output: ON Semiconductor, MSQA6V1 输出:安森美, MSQA6V1 Output: Competition, SMF05 输出:竞争者, Better response even with the effect of parasitic (V=Ldi/dt) 即使有寄生效应(V=Ldi/dt) 也有较好的响应 Bad response due to the parasitic effect (V=Ldi/dt) 寄生效应(V=Ldi/dt) 造成响应变差 5V/div 5V/div 5 www.onsemi.com TVS vs Varistors ESD protection comparison 安森美半导体、变阻器和竞争者的ESD响应比较 Output: Varistor, VA-C1005-5R5E 输出:变阻器,VA-C1005-5R5E Input: 8KV ESD Pulse, IEC 61000-4-2 输入: 8KV ESD脉冲, IEC 61000-4-2 IEC 61000-4-2 ESD pulses are very fast rise time (between 0.7 and 1nsec) IEC 61000-4-2 ESD 脉冲的上升时间很快(在 0.7 和1nsec之间) Response time measured from 10% to 90% of the peak Voltage 15 nsec 从峰值电压10% 到 90%测量的 响应时间: 15 nsec Output: ON Semiconductor, MSQA6V1 输出:安森美, MSQA6V1 Test condition: 测试条件: Applied 8kV ESD contact pulse using a high frequency test board (Low inductance, ideal case). 使用高频测试板施加8kV ESD 接触脉冲(低电感,理想状况)。 Response time measured from 10% to 90% of the peak Voltage 10 nsec 从峰值电压10% 到 90%测量的 响应时间: 10 nsec 6 www.onsemi.com TVS vs varistor Package Size Comparison 封装尺寸比较 On Semiconductor SC88 (2 x 2 x 1) 安森美半导体SC88 On Semiconductor SOT-563 (1.6 x 1.6 x 0.60) 安森美半导体 SOT-563 英寸 Varistor (3.2 x 1.6 x 0.9) 变阻器 毫米 尺寸 英寸 毫米 尺寸 7 www.onsemi.com TVS vs Varistor Conclusion 结论 ON Semiconductor (MSQA6V1) 安森美半导体 Varistor 变阻器 ESD 7V 35V Response Time 响应时间 10nS 15nS Surge 浪涌 11V 20V Leakage 漏电 0.04uA 4uA Foot Print 占用面积 1.6 x 1.6 3.2 x 1.6 Height Profile 高度 0.55 0.90 Capacitance 电容 90pF 360pF Lifetime 寿命 8 www.onsemi.com TVS ESD Conclusion • IC’s must be protected because most of them cannot withstand ESD conditions higher than 2kV. • ON Semiconductor devices showed the best performance to suppress ESD pulses generated by the IEC 61000-4-2 ESD standard. • PCB lay-out is critical to improve ESD protection and reduce the parasitic effects (V=Ldi/dt). • Varistors do not offer an effective ESD protection because their clamping voltage is too high. They cannot be used for protection in high speed data lines either because of their high capacitance. • Semtech’s devices are more sensitive to board parasitic effects, which could be due to higher package’s inductance. 9 www.onsemi.com TVS - Dual / Multi-Line Array Protection Device: Package: Circuit: Device: SL05 Series Package: MSQA6V1W5T1 SMF05T1 NSQA6V8AW5T2 (7pF) SC88A NZQA5V6,6V2,6V8XV5T1 NZQA5V6AXV5T1(20pF) NZQA6V8AXV5T1 (15pF) SOT553 Circuit: SOT23 SM05 Series MMBZ5V6ALT1 Series MMBZ15VDLT1 MMBZ27VCLT1 NUP4104XV6T1 SOT563 SMS05 Series SC74 NUP4102XV6T1 (15pF) MMQA5V6LT1 Series Smallest package (1.6x1.6mm) DF6A6.8FU NUP6101 SC88 NUP5102XV6T1 SMF05C, 12C , 24C SC88 SMS05C, 12C, 24C SC74 Micro8 10 www.onsemi.com Benefits: Integrated Solution Increase Reliability & Quality Saving Board Space Low Capacitance (as low as 12pF typical for NZQA6V8A and NSQA6V8A) SMF05C; NUP5102VX6 5 Uni-Directional ESD Protection Packages: SC-88 ( SMF05C) SOT-563 (NUP5102) 11 IC to be Protected NZQA5V6XV5T1; NZQA6V2XV5T1; NZQA6V8XV5T1; NZQA8V2XV5T1; NZQA5V6AXV5T1; NZQA6V8AXV5T1; MSQA6V1W5T2; SMF05T1; NSQA6V8AW5T2 4 Uni-Directional ESD Protection Packages: SC-88A (for MSQA, SMF05, NSQA) SOT-553 (for NZQA series) IC to be Protected TVS Application: Bottom Connector www.onsemi.com TVS Application: SIM Card Interface NZQA6V8AXV5T1; NSQA6V8AW5T2 4 Unidirectional Array for Protection Low Capacitance ( <7pF @ 3V) Package: NZQA6V8AXV5T1: SOT-553 NSQA6V8AW5T2: SC-88A Vcc SIMDATA SIMCLK SIMRST NZQA6V8AXV5T1 MSQA6V1W5T2 Benefits: ESD Immunity as per IEC61000-4-2 Level 4 Low Capacitance for fast data rate Low PCB area (51 x 51 mil for NUP4101FCT1) NUP4101FCT1; NUP4102XV6T1 4 Bi–Directional ESD Protection Low Capacitance ( <10pF @ 3V) Package: NUP4101FCT1: Flip-Chip NUP4102VX6T1: SOT-563 OR Vcc SIMDATA SIMCLK SIMRST NUP4101FCT1 NUP4102VX6T1 12 www.onsemi.com ESD+EMI filter applications Microphone and Speaker • ESD Protection/EMI Filtering LCD Display • ESD Protection/EMI Filtering Keypad • ESD Protection/ EMI Filtering Camera • ESD Protection/EMI Filtering Bottom Connector • ESD Protection/ EMI Filtering SIM Card, USB/MMC Interface • ESD Protection/EMI Filtering 13 www.onsemi.com EMI Types and Generation EMI类型和产生 1.- Conducted EMI is noise fed back from a system onto the AC or DC power line or signal lines. This noise is in the frequency range of 10KHz to 30MHz. It usually has a common mode component and a differential mode component. The common mode component appears as a voltage on both line and neutral leads with respect to ground or earth while the differential mode appears between the line and neutral leads. To suppress conducted EMI, LC networks are usually used. 传导EMI是从系统反馈到交流或直流电源线或信号线的噪声。这种噪声的频率范围从10KHz 到 30MHz。它通常有一个共模分量 和一个差模分量。共模分量是施加在火线和中线上的对地电压。差模出现在火线和中线之间。为了抑制传导EMI,通常使用LC 网络。 2.- Radiated EMI comes in the form of electromagnetic waves radiating directly from the circuitry and leads of a system. A common example is the AC power cord of the system which can act as a transmitting antenna for radiated EMI. Ranging from 30MHz to 1GHz, this type of noise can be effectively suppressed by metal shielding around the source. 辐射EMI以直接从系统电路和导线辐射出来的电磁波形式出现。常见的实例是系统的交流电源线作为辐射EMI的发射天线。频率 范围从30MHz 到 1GHz,这种噪声可以被源周围的金属屏蔽有效抑制。 Conducted EMI, ac power line 60Hz 传导EMI,交流电源线60Hz Radiated EMI, high frequency clock 辐射EMI,高频时钟 图2:有高频噪声的20MHz时钟 图1:工厂中的线路源 14 www.onsemi.com ESD+EMI filter Performance Comparison Between Discrete and Integrated Filters Discrete Pi-Filter Integrated Pi-Filter NZF22OTT1 R1 R1 -0 -0 C1 C2 1 -20 1 -20 L2, par asitic -40 2 L1, par asitic 0 -60 2 0 Ground parasitic L1 > 2.8nH usually -80 100KHz 1.0MHz 20*LOG10(2*V(R-Receiver:1)) 10MHz 100MHz 1.0GHz -40 Reduced parasitic L2 < 0.5nH 10GHz -60 100KHz 1.0MHz 20*LOG10(2*V(R-Receiver:1)) Frequency 10MHz 100MHz 1.0GHz 10GHz Frequency Sharp Rise Smooth Rise Advantages of ON Semi’s integrated Filters versus discrete filters • Reduced package parasitic for better roll-off frequency response. • Tighter tolerances for integrated components. • Integrated ESD protection. • Significant PCB space savings for optimized designs. 15 www.onsemi.com ESD+EMI filter: Devices Device: Package: Device: Circuit: LC03-6 Package: STF202 TSOP6 NUF2221W1 SC88 NZF220DF SC88A NZF220T SC75 NZMM7V0T4 24 MLF Circuit: SO8 SRDA05-4 NUF2101M SC59-6 NUF2441H ChipFET NUF4401MN QFN 2x2 21 www.onsemi.com ESD+EMI filter: Devices Device: NUF2113FC NUF2114FC Package Device: Circuit: Package: NUF3101FC Flip Chip NUF6105FC NUF6115FC NUF6106FC (12pf, low cap) Flip Chip NUF8101FC Flip Chip NUF9001FC Flip Chip Circuit: Flip Chip NUF2222FC Flip Chip NUF4105FC NUF4115FC Flip Chip NUF4107FC Flip Chip 22 www.onsemi.com ESD+EMI filter Audio: Speaker Line NUF2441FCT1(Available Jun’04) • • • • EMI Filter with ESD Protection Inductors Integrated 3.5nH Low Resistance 0.32ohm Integrated Package: ChipFET & Flip-Chip Audio processing and conversion OR A Speaker Benefits: Ui-Directional EMI Filtering Low Power Loss by Integrated Inductors Replace 12 discrete components ESD Immunity as per IEC61000-4-2 Level 4 D OR NUF2113FCT1(Available Q2’04) • • • EMI Filter with ESD Protection Low Resistance 10ohm Integrated Package: Flip-Chip Audio processing and conversion Benefits: Bi-Directional EMI Filtering Prevents Noise from Entering/Leaving the System Low Power Loss by Integrated Low Resistance Replace 14 discrete components ESD Immunity as per IEC61000-4-2 Level 4 23 OR Speaker A D www.onsemi.com ESD+EMI filter Audio: Headset (Speaker + Microphone) NUF2114FCT1 • • • EMI Filter with ESD Protection Integrated Solution Package: Flip-Chip Audio processing and conversion A D Benefits: Bi-Directional EMI Filtering Prevents Noise from Entering/Leaving the System Low Power Loss by Integrated Low Resistance Replace 14 discrete components ESD Immunity as per IEC61000-4-2 Level 4 24 www.onsemi.com ESD+EMI filter Audio: Microphone and Audio Line NUF2441HT1; NUF2441FC • • EMI Filter with ESD Protection Package: ChipFETTM (for NUF2441HT1) Flip-Chip (for NUF2441FC) Vbias Audio processing and conversion Microphone/ Speaker A Benefits: D Bi-Directional EMI Filtering Prevents Noise from Entering/Leaving the System Low PCB area Replace 10 discrete components ESD Immunity as per IEC61000-4-2 Level 4 NUF8101FCT1 • • • Integrates the Filtering for 2 Microphone Inputs, 4 Resistors for Biasing, and ESD Protection EMI Symmetrical (I/O) Low-Pass Filter Package: Flip-Chip Audio processing and conversion Microphone1 A Microphone2 Benefits: Low PCB area (2.0 x 2.5 mm2) Very thin package (0.65mm) ESD suppression on both input and output pins (IEC61000-4-2 Level 4) NUF8101FCT1 Speaker1 D Speaker2 25 www.onsemi.com ESD+EMI filter Audio: Audio Line NMF3501FC & NMF3502FC • • • • -75dB @ 80MHz -1GHz -60dB @ 1GHz – 2GHz Two-stage Integrates Filter for Microphone Inputs with Resistors for Biasing, and ESD Protection Package: Flip-Chip Stage-1 Stage-2 Audio processing and conversion A NMF3501FC NMF3501FC D Microphone Benefits: Low PCB area (1.2 x 1.7 mm2) Very thin package (0.65mm) Replace 30 discrete components ESD suppression on both input and output pins (IEC61000-4-2 Level 4) 26 www.onsemi.com ESD+EMI filter • • • • • NZMM7V0T4 9 EMI/RFI Bi-Directional “Pi” Low Pass Filter 4 x 4 mm Lead Less MLF Surface Mount Package Replace 30 discrete components Package: 24 PIN MLF • • • NZF220DFT1 Dual EMI/RFI Bi–directional “Pi” Low–Pass Filters Package: SC-88A Keypad I1 I2 I3 • • • NZF220TT1 Single EMI/RFI Bi–directional “Pi” Low–Pass Filters Package: SC-75 Benefits: Suppresses EMI/RFI Noise in Systems Subjected to Electromagnetic Interference Small Package Size Minimizes Parasitic Inductance, Thus a More “Ideal” Low Pass Filtering Response 27 CPU O1 O2 O3 ON’s Filter I7 O7 O8 O9 I8 I9 www.onsemi.com NUF9001FCT1(Available May’04) • 10 Channel EMI Pi-Filter with ESD Protection • Two Bump Sizes Available – 300mm & 350mm • Package: Flip-Chip Bottom Connector NUF9001FC CPU ESD+EMI filter Benefits: Low PCB area (2.6mm x 2.6mm) Reduced components count Low line capacitance for high data rate exchange Benefits: Low PCB area Reduced components count Wide freq. range rejection -35dB from 800MHz to 2.2GHz Low line capacitance for high data rate exchange 28 NUF6105/06 CPU NUF4105FCT1; NUF6105FCT1; • 4 & 6 Channel EMI Pi-Filter with ESD Protection • Two Bump Sizes Available – 300mm for NUF4105FC and NUF6105FC – 350mm for NUF4115FC and NUF6115FC • Package: Flip-Chip NUF4105/15 www.onsemi.com NUF4401MNT1(Available Jun’04) • 4 Channel EMI Pi-Filter with ESD Protection • 200 Ohms line resistor design for LCD application • Package: 2X2mm QFN package LCD Display NUF4401 CPU ESD+EMI filter Benefits: Low PCB area Reduced components count Wide freq. range rejection -35dB from 800MHz to 2.2GHz Low line capacitance for high data rate exchange 29 NUF6105/06 CPU NUF4105FCT1; NUF6105FCT1; NUF6106FCT1 (21pF@ 2.5V),NUF9001 • 4 , 6 &10 Channel EMI Pi-Filter with ESD Protection • Two Bump Sizes Available – 300mm for NUF4105FC and NUF6105FC – 350mm for NUF4115FC and NUF6115FC • Package: Flip-Chip NUF4105/15 www.onsemi.com ESD+EMI filter Mega pixel Camera Interface NUF6106FCT1 (21pF@ 2.5V) Benefits: Low PCB area Reduced components count Wide freq. range rejection -25dB from 800MHz to 2.2GHz Low line capacitance for high data rate exchange 30 NUF6106FC CPU 6 Channel EMI Pi-Filter with ESD Protection Low Capacitance (21pF@2.5V) for Mega pixel/ high speed dataline Package: Flip-Chip CAMERA • • • www.onsemi.com ESD+EMI filter NUF6106FCt1 –Low capacitance 6 channel EMI filter for high speed 31 www.onsemi.com ESD+EMI filter SIM Card Interface NUF3101FCT1(Available in Jun 04) Integrated Filter with ESD Protection 3 channels are dedicated to data lines and 1 channel is for the supply voltage Package: Flip Chip (1.6X1.6mm) Vcc in1 out1 SIMCLK in2 out2 SIMRST in3 out3 SIMDATA NUF3101FCT1 32 www.onsemi.com ESD+EMI filter Multimedia Card Interface NUF4105FCT1; NUF4115FC • 4 Channel EMI Pi-Filter Array for Data Lines with ESD Protection Two Bump Sizes Available • – – • 300mm for NUF4105FCT1 350mm for NUF4115FC Package: Flip-Chip Vcc MMCDATA in1 MMCCLK in2 MMCCMD in3 Vcc NUF4105FC NUF4115FC out1 out2 out3 GND Benefits: Low PCB area Reduced components count Wide frequency range rejection -35dB from 800MHz to 2.2GHz Low line capacitance for high data rate exchange NZMM7V0T4 • • 9 EMI Bi-Directional “PI” Low Pass Filter Package: 24 PIN MLF Benefits: Low PCB area Reduced components count Low parasitic inductance, providing a more ideal low pass filtering response 33 www.onsemi.com ESD+EMI filter NUF3101FCT1 Integrated Filter with ESD Protection 3 channels are dedicated to data lines and 1 channel is for the supply voltage Package: Flip Chip @ 300um Multimedia Card Interface Vcc MMCDATA in1 MMCCLK in2 MMCCMD in3 Vcc NUF3101FC out1 out2 out3 GND Benefits: Low PCB area Reduced components count Wide frequency range rejection -30dB @ 800mHz - 1GH -25dB @1GHz – 2GHz Low line capacitance, 20pF typical, for high data rate exchange 34 www.onsemi.com ESD+EMI filter SIM card EMI filter NUF3101FCT1 Description This device is a 3 line EMI filter array with TVS diode design for SIM card application. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers ESD protection – clamping transients from static discharges. ESD protection is provided across all capacitors. Features EMI Filtering and ESD Protection Flipchip Moisture Sensitivity Level 1 Applications •Wireless Phones •Handheld Products •LCD Displays Schedule Phase 0 approved Engineering Sample Production 35 Now May 2004 www.onsemi.com ESD+EMI filter NUF3101FCT1 Integrated Filter with ESD Protection 3 channels are dedicated to data lines and 1 channel is for the supply voltage Package: Flip Chip Benefits: Low PCB area Reduced components count Wide frequency range rejection -35dB from 800MHz to 2.2GHz Low line capacitance for high data rate exchange 36 SIM Card Interface Vcc SIMDATA in1 out1 SIMCLK in2 out2 SIMRST in3 out3 NUF3101FCT1 www.onsemi.com ESD+EMI filter Flip Chip NUF4105 4 channel filter+ 4 TVS diode NUF4107 4 channel filter +USB filter NUF6105 6 channel filter NUF6106 (Low-cap) 6 channel filter NUF9001 10 channel filter NUF3101 SIM Card filter NUF3201 MM Card filter New Products Package Introduced NZF220T/NZF220D Single(SC-75)/ Dual filter(SC88A) NZMM7V0 9 channel filter MLF24 pin 2004 2005 24 PIN MLF 4X4mm NUF4401MN 4 channel filter 2mm QFN NUF4402MN 4 channel filter 1.6mm QFN NUF8401MN 8 channel filter 1.6X4mm DFN 8 pin QFN 2X2mm 8 pin QFN 1.6X1.6mm NUF4404MN (Low-cap) 4 channel filter 1.6mm QFN NUF4801MN (Low cap) 4 channel filter/ 4 ESD diode 1.6X4mm DFN NUF1001MN (Low-cap) 10 channel filter/4 ESD diode 1.6X5mm DFN 37 16 pin DFN 1.6X4.0mm www.onsemi.com ESD+EMI filter Flip Chip NUF2441FC 2 channel LC Speaker/Headset filter NUF2113FC 2 channel Headset RC filter NUF2114FC 2 channel Mic RC filter New Products Package NUF4111 MN 4 channel Speaker and Mic RC+LC Filter in 2mm QFN NUF4112MN 4 channel Speaker and Mic RC+ LC Filter in 1.6mm QFN Introduced 8 pin QFN 2X2mm 2004 2005 8 pin QFN 1.6X1.6mm NUF4112FC 3 channel Speaker and Mic RC Filter RC Filter LC Filter 38 www.onsemi.com ESD+EMI filter New Products NUF8401 NUF8401 NUF4401 NUF4402 • • • • 1.6 X1.6mm 2.0 X2.0mm 8- line EMI filter 1st 8 line filter in DFN package Sample available : Aug 04 Production schedule: Sep 04 CMD 8 line Flip chip (1.5X4.0mm) NUF4401 • • • • 4 Channel filter Standard 8 leaded QFN pacakage Sample available: NOW Production schedule: Aug 04 NUF4402 • • 1.6 X4.0mm • • 39 4 Channel filter Smallest 4 line filter in QFN package Sample available : Aug 04 Production schedule: Sep 04 www.onsemi.com ESD+EMI filter New Products NUF6401 NUF6401 • NUF6402 6- line EMI filter • 1st to provide in DFN package • Pin to Pin compatible Flip chip package Competitor cross reference CMD (CSPEMI306A) STM (EMIF06-10006F1) PHILIPS (IP4053CX15) NUF6402 1.35 X3.0mm • • • 4- line EMI filter + 4 ESD diode 1st to provide in DFN package Pin to Pin compatible Flip chip package Competitor cross reference CMD (CSPEMI307A) STM (EMIF04-10006F1) 1.35 X3.0mm 40 www.onsemi.com ESD+EMI filter QFN versus Flipchips QFN package • Better Reliability and robust package • Better ESD rating and handling capability • All pins accessible after board mounted for debugging or trouble shooting for design engineers • Better Filter characteristics than Flip-chip or CSP • 50% Less parasitic Inductance than Flip-chip or CSP • Increase chip mount density (400um chip to chip separation) • Competitive Pricing 41 www.onsemi.com ESD+EMI filter Pin to Pin Compatibility The DFN package • Pin to Pin replacement • Compatible Foot print • Same Case size Flip chip or BGA (1.33X 3.0mm) Related Part# are NUF6401 and NUF6402 DFN package (1.35X3.0mm) 42 www.onsemi.com ESD+EMI filter 4 Channel EMI filter NUF4401MN(2.0MM) Description This device is a 4 line EMI filter array for wireless applications. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers ESD protection – clamping transients from static discharges. ESD protection is provided across all capacitors. Benefits • Reduces EMI/RFI Emissions on a Data Line • Integrated Solution offers Cost and Space Savings • Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass Filter Response • Integrated Solution Improves System Reliability Features EMI Filtering and ESD Protection QFN 2x2mm Moisture Sensitivity Level 1 Applications •Wireless Phones •Handheld Products •LCD Displays Schedule Phase 0 approved Engineering Sample Production 43 May 2004 Q2 2004 www.onsemi.com ESD+EMI filter 4 Channel EMI filter NUF4105MN (QFN1.6MM) Description This device is a 4 line EMI filter array for wireless applications. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers ESD protection – clamping transients from static discharges. ESD protection is provided across all capacitors. Low Capacitance Cline = 15pF max @ 3 volts Benefits • Reduces EMI/RFI Emissions on a Data Line • Integrated Solution offers Cost and Space Savings • Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass Filter Response • Integrated Solution Improves System Reliability Features EMI Filtering and ESD Protection QFN 1.6x1.6mm Moisture Sensitivity Level 1 Applications •Wireless Phones •Handheld Products •LCD Displays Schedule New Product 44 Phase 0 approved Engineering Sample Production May 2004 Q3 2004 www.onsemi.com ESD+EMI filter 5 Channel EMI filter NUF5105MN (1X 3MM) Description This device is a 5 line EMI filter array for wireless applications. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers ESD protection – clamping transients from static discharges. ESD protection is provided across all capacitors. Features EMI Filtering and ESD Protection QFN 1x3mm Moisture Sensitivity Level 1 Applications •Wireless Phones •Handheld Products •LCD Displays GND Benefits • Reduces EMI/RFI Emissions on a Data Line • Integrated Solution offers Cost and Space Savings • Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass Filter Response • Integrated Solution Improves System Reliability Schedule Engineering Sample Production Q3 2004 Q3 2004 New Product 45 www.onsemi.com ESD+EMI filter USB + 3 EMI filter NUF5107MN ( 1X 3MM) Description This device is a 3 line EMI filter array for wireless applications. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers USB filtering circuitry with ESD protection – clamping transients from static discharges. ESD protection is provided across all capacitors. Features USB filtering circuit EMI Filtering and ESD Protection QFN 1X3mm Moisture Sensitivity Level 1 Applications •Wireless Phones •Handheld Products •LCD Displays Rs 1 7 2 8 Rs 3 9 4 Rin 10 5 Rin 11 6 Rin 12 Benefits • Reduces EMI/RFI Emissions on a Data Line • Integrated Solution offers Cost and Space Savings • Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass Filter Response • Integrated Solution Improves System Reliability New Product 46 Schedule Engineering Sample Production Q3 2004 Q3 2004 www.onsemi.com USB interface: Single Channel Transceiver NCN2500 The NCN2500 Integrated Circuit is a single channel transceiver designed to accommodate the physical USB Port with a microcontroller digital I/O. The part is fully USB compliant and supports the full 12 Mbps speed. On the other hand, the NCN2500device includes the pull−up resistors as defined by the USB−ECN new specifications. Features • Compliant to the USB Specification, Version 2.0, Low and FullSpeed • Very Small Footprint Due to the QFN−16 Package • Integrated D+/D− Pull−Up Resistors • Operates Over the Full 1.5 V to 5.5 V Vbat Supply Typical Application • Portable Computer • Cellular Phone 47 www.onsemi.com USB interface: Single Channel Transceiver NCN2500 14 Vusb 3.3V LDO 3.3V 3.3V 12 Vreg S5 EN_VObus 5 100k GND RPU2 DSPD RPU1 RESISTORS INTERNALCONTROL PULL UP Vm EN_RPU 16 13 VObus S2 Vp S1 DSPD S3 VCC Vcc 15 VCC Vp 3.3V 3 11 D+ 2 DSPD 1 Vm 4 10 DVCC 3.3V 6 3 OE 9 8 NC RCV 2 GND 6 GND SPND 7 48 www.onsemi.com USB interface: NCN2500:TYPICALAPPLICATION GND C2 VCC C1 Vusb U1 Vusb EN_RPU Vreg 5 µC 2 3 4 1 9 7 VObus 14 12 C3 GND 1uF 13 EN_VObus RCV Vp Vm DSPD OE SPND D- NCN2500 R2 33R GND D+ GND GND 10 11 6 2 5 Vusb R3 33R GND J1 USB U2 NUP2201MR6 1 2 3 4 VBUS DD+ GND 5 16 Vcc SHIELD 15 1 10uF 6 GND 4.7uF GND 49 www.onsemi.com USB interface: NCN2500 / MICREL COMPARISON Function MIC2550 MIC2551A NCN2500 USB version 2.0 2.0 2.0 USB Speed Low & Full Low & Full Low & Full Vsupply 2.5V-5.25V 1.6V – 3.6V 1.5V – 5.5V Yes Yes Yes 2.5mA 2.5mA 100mA Switched 3V reg. No Yes Yes ECN compliant No No Yes The USB pull up resistor is integrated, according to the new USB/ECN specification ( save external component) 16 pins MLF TSSOP14 16 pins MLF TSSOP14 QFN16 The NCN2500 is electrically and mechanically pin to pin compatible with either the MIC2550 or the MIC2551 16 pins MLF package 3V reg. Integrated LDO 3V reg. LDO Output Current Package 50 Comments The NCN2500 can operate over the full battery supply voltage range The NCN2500 built-in DC/DC converter is capable to supply peripheral devices www.onsemi.com USB interface: NCN2500 / FAIRCHILD COMPARISON USB1T11A NCN2500 Comments Vcc supply 3.0V - 3.60V 1.50 - 5.50V The 1.50V makes the NCN2500 suitable for any battery applications, particularly portable phone. Vusb supply No dedicated pin 4.20V – 5.50V The Fairchild’s part can not operate straightforward with the power source supplied by the USB port. USB ECN specifications Not compliant Fully compliant The RPU1 and RPU2 resistors are integrated into the NCN2500, not in the Fairchild part Vreg Not provided 3.30V LDO The built-in LDO make possible a stand alone application with the NCN2500. Vusb Switch Not provided integrated Such a switch brings extra flexibility at system design level. Digital Input Voltage Support up to 5V if external current clamps are provided Support up to 5.5V without any external clamp The NCN2500 operates without extra circuits to prevent over current on the digital pins 51 www.onsemi.com USB interface: ESD Protection USB USB 1.1 I/O Lines + VBus 1 Lines (1/2 Port) SL05 2 Lines (1 Port) 4 Lines (2 Port) SRDA05-4 LC03-6 USB 2.0 I/O Lines + VBus NUP4201DR2 NUP2201MR6 NUP4201MR6 Low capacitance series <5pF for USB 2.0 and high speed I/O USB I/O Lines NUP1301ML3 USB1.1 NUP4301MR6 NUP2301MW6 USB2.0 52 www.onsemi.com USB Interface ESD: Cross Reference (USB 2.0) 1 line P/N: CAMD CM1210-01ST; CM1210-01SC Package: SOT23-3; SC70-3 Max. Cap: 1.3pF ESD: IEC61000-4-2 1 port (2 lines) P/N: CM1210-02ST; CM1210-02SC Package: SOT143-4; SC70-5 Max. Cap: 1.3pF ESD: IEC61000-4-2 P/N: SLxx Package: SOT23 Max. Cap: 5pF ESD: IEC61000-4-2 2 ports (4 lines) P/N: CM1210-04ST Package: SOT23-6 Max. Cap: 1.3pF ESD: IEC61000-4-2 P/N: SRV05-4 Package: SOT23 Max. Cap: 5pF ESD: IEC61000-4-20 Surge: 300W P/N: USB208 Package: SOT-23-6 Max. Cap: 5pF ESD: IEC61000-4-2 P/N: NUP1301ML3 Package: SOT-23 Max. Cap: 1.5pF ESD: IEC61000-4-2 Proposal Under Development P/N: NUP2201MR6 Package: TSOP-6 Max. Cap: 5pF ESD: IEC61000-4-2 Surge: 300W P/N: NUP4201DR2; NUP4201MR6 Package: SO-8; TSOP-6 Max. Cap: 5pF: 5pF ESD: IEC61000-4-2 Surge: 300W; 300W P/N: NUP2301MW6 Package: SC-88 Max. Cap: 5pF ESD: IEC61000-4-2 P/N: NUP4301MR6 Package: TSOP-6 Max. Cap: 5pF ESD: IEC61000-4-2 53 www.onsemi.com USB Interface ESD: Cross Reference (USB 1.1) 1 line P/N: SLxx Package: SOT23 Max. Cap: 5pF ESD: IEC61000-4-2 1 port (2 lines) 2 ports (4 lines) P/N: SR05 Package: SOT-143 Max. Cap: 10pF ESD: IEC61000-4-2 Surge: 500W P/N: SRDAxx-4 Package: SO-8 Max. Cap: 15pF ESD: IEC61000-4-2 Surge: 500W P/N: USB004 Package: SOT-143 Max. Cap: 6pF ESD: IEC61000-4-2 P/N: USB208 Package: SOT-23-6 Max. Cap: 5pF ESD: IEC61000-4-2 P/N: PSR05 Package: SOT-143 Max. Cap: 10pF ESD: IEC61000-4-2 Surge: 500W ProTek Device P/N: PUSB3B; PUSB6B Package: SO-8 Max. Cap:15pF; 15pF ESD: IEC61000-4-2 Surge: 500W; 500W 54 www.onsemi.com USB Interface ESD: Cross Reference (USB 1.1) 1 line 1 port (2 lines) 2 ports (4 lines) P/N: USB6Bx; Package: SO-8 Max. Cap: 25pF ESD: IEC61000-4-2 Surge: 500W P/N: SP0502AAHT Package: SOT-143 Max. Cap: 6pF ESD: IEC61000-4-2 Littelfuse P/N: USB6B1 Package: SO-8 Max. Cap: 14pF (typical) ESD: IEC61000-4-2 Surge: 500W P/N: SRLC05 Package: SOT-143 Max. Cap: 6pF (typical) ESD: IEC61000-4-2 Surge: 200W Microsemi P/N: SL05T1 Package: SOT23 Max. Cap: 5pF ESD: IEC61000-4-2 P/N: LC03-6R2 Package: SO-8 Max. Cap: 25pF ESD: IEC61000-4-2 Surge: 2000W 55 P/N : SRDA05-4R2 Package: SO-8 Max. Cap: 10pF; 15pF ESD: IEC61000-4-2 Surge: 500W: 500W www.onsemi.com USB Interface – ESD+EMI Filter Upstream Filter Downstream Filter USB 1.1 ESD (I/O Lines) + VBus + EMI (Filter) STF202 NUF2101 NUF2221W1T2 NUF2101MW6 Introduced NUF2101XV6 NUF2221XV6 Under Develop Seeking market partnership USB 2.0 Require Common Mode Choke (Detail on next page) 56 Proposal www.onsemi.com USB Interface ESD+EMI: CrossReference(Filter) Upstream - Peripheral CAMD Microsemi Downstream - Host P/N: STF202-xx STF203-22 Package: SOT-23, SC70 Rs: 22, 30 P/N: STF201-xx Package: SOT-23 6L Rs: 22, 30 P/N: PACUSB-100 Package: 8 pin MSOP Rs: 33 P/N: PACUSB-200 Package: 16 pin QSOP Rs: 33 P/N: PACUSB-U1/U2/U3 Package: SOT-23 or SC70 Rs: 15, 22, 30 P/N: USBUFxxW6 Package: SOT-323-6L Rs: 15, 22, 33 P/N: USBDFxxW5 Package: SOT323-5L Rs: 15, 33 P/N: P/N: LX7201-xx Package: SOT-23 Rs: 15, 22 LX7202-xx LX7203-xx Package: SOT-23, SC70-6L Rs: 15, 22 P/N: SPUSB1xJT Package: SC70-6 Rs: 12, 22, 33 Proposal Under Development Littelfuse P/N: STF202-22 NUF2221W1T2; NUF2221XV6; Package: TSOP-6; SC88; SOT-563 Rs: 22 P/N: STF-201; NUF2101MW6; NUF2101XV6; Package: TSOP-6; SC-88; SOT-563 Rs: 22 57 www.onsemi.com USB Interface ESD+EMI: application Peripheral (Upstream) NUF2221W1T2; STF202-22 • • • • 2 Line Termination, EMI Filtering and ESD Protection for Upstream USB Port Integrated Pull-up Resistor VCC Protected by Integrated Clamping Diode Package: SC-88 (for NUF2221) TSOP-6 (for STF202) Vcc NUF4107FCT1 • • • 4 Channel EMI Filtering with ESD Protection for Data Lines USB 1.1 Filtering Provided with Speed Detection Flip-Chip Package NUF2221 & STF202 Vbus USB D+ In+ USB D- Inin1 D1 D2 Benefits: IEC61000-4-2 Level 4, ESD Protection Small PCB space Up to 27 discrete components replaced D3 D4 58 in2 Vbus outout1 NUF4107FC in3 in4 out+ out2 out3 GND out4 www.onsemi.com Vibrator Driver Integrated Inductance Load Driver VCC • The driver is activated with + logic voltage/current. Relay/Motor • The driver controls the coil of the relay. • The integrated Zener diodes protect the FET from the inductor’s kick back when it is deactivated. • The relay controls the power lines through its contacts. VDD Ch1 – VGS Ch2 – ID Ch3 - VDS uP ON Semi’s device 59 SOT-23 www.onsemi.com Vibrator Driver NUD3105 Inductive Load Driver Description NUD3105 is a MicroIntegration™ device designed to provide a robust driver interface between sensitive control circuits and inductive DC loads. It is optimized to drive relays and other loads from a 3V to 5V rail, and can drive relay coils up to 2.5 watts at 5V. SOT-23 Replace 5 discrete! NUD3105 – MOSFET Drive Features Benefits Low input drive current Back-to-front transient isolation is inherent Single package integration Integrated free-wheeling diode Guaranteed OFF state if input connection is lost Efficient and easy interface to control logic Reliable, robust performance Replaces 3 to 6 discrete devices; saves board space Eliminates the need for a separate diode across the load No need to prevent this possibility with extra components Applications Ordering Information Telecom line cards, modems, fax, answer machines Vibrator driver for cell phones and pagers Desktop computers, peripherals, copiers Consumer electronics, set top boxes Small appliances, white goods Security systems, ATE Solenoid driver Automotive relays, motor controls, lamp drivers NUD3105LT1 SOT23 3kU/reel More Information Online See http://www.onsemi.com/ – Datasheet: NUD3105/D – Case outline – Samples 60 www.onsemi.com Vibrator Driver NUD3105: “But you’re sole source…”Drop-in replacement on existing PC Board Copper traces ADD JUMPER Existing PC board Same PC board (with Integrated relay driver) 61 www.onsemi.com MOSFET Focus Area Drain Current (A) >40 35 Focus area PC Motherboard VRM Automotive power Steering DC 48V input DC-DC converter, Color monitor image correction switch 30 25 20 Handheld products DC-DC converter, Notebook PC AC200V power supply OA equiments, Automotive parts (motor solenoid driver, DC12-24V input DC-DC) 15 10 AC100V SMPS Back-up Power Supply Inverter for Lighting AC adapter (Notebook, Portable VCD,DVD) 5 Cellular phone 30 60 100 200-250 62 500 600 800 Color monitor (high voltage circuit) 900 1400 VDS (V) www.onsemi.com MOSFET Processes 功率产品工艺 • HD3E & HD3E-RP (1-60V): • Low voltage planar technology: Figure of Merit equals Low RDS(ON) verses low gate charge. Best for quick switching applications. 低压平面技术:特性为低RDS(ON) 和低栅极电荷。最适合快速开关应用 • TRENCH (1-30V): 沟道(1-30V) • Low voltage trench technology: Figure of Merit equal Low RDS(ON) verses die size. Best for lowest RDS(ON) applications. 低电压沟道技术:特性为低RDS(ON) 和小芯片尺寸。最适合低RDS(ON) 的应用 • HD-Plus (1-250V): • Low and Medium voltage planar technology: Combines the use of MOSFET cells with poly resistors, capacitors, diodes and logic MOSFETs. Create simple analog circuits. For smart discretes. 低压中压平面技术:把MOSFET单元和聚酯电阻,电容,二极管和逻辑MOSFET 相结合。建立简单的模拟电路。高性能分立元件。 63 www.onsemi.com MOSFET Process Roadmap 1Q02 2Q02 3Q02 4Q02 1Q03 2Q03 3Q03 4Q03 Product Portfolios HD3E - 20 to 30 V, N & P Ch Market Segments •Portables/Wireless •Computing TMOS 7 - 40 to 250V, N & P Ch •Automotive •Computing HD Plus •Automotive •Computing Trench Trench 8V P-Channel •Portable & Wireless 20V P-Channel •Portable & Wireless Trench 20V N-Ch • Portable & Battery Trench 30 V N/P Ch • Computing 64 Production Q1 RTM Development www.onsemi.com MOSFET World Class Performance using Square Cell 3 We offer the industry’s leading RDS(ON) because we have highest effective channel density Effective Channel Density (um / um2) 2.5 2 1.5 ON Semi 1 Competitors recent announcements 0.5 Competitors Today 0 10 100 1000 Cell Density (MCells / in2) Square Stripe Figure 1 65 www.onsemi.com MOSFET in TSOP6/SOT23Package Maximum Ratings Part VDS VGS ID Number (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V * NTR4502PT1 -30 ±20 0.350 0.175 - 1.95 * NTR4101P -20 ±8 0.050 0.060 0.800 2.40 * NTR2101P -8 ±8 0.050 0.065 0.100 3.50 * NTR4503N 30 ±20 0.140 - - 2.50 * NTR4103N 20 ±8 0.040 0.050 0.120 2.40 NTR4501N 20 ±8 0.080 0.100 0.140 2.40 * NTGS4111P -20 ±8 0.040 0.050 0.120 3.20 * NTGS2101P -8 ±8 0.026 0.035 0.046 5.60 Type (A) SOT23 SOT-23 3.0 X 3.0 mm p- n- TSOP6 SINGLE TSOP-6 3.0 X 3.0 mm p- * Trench 66 www.onsemi.com MOSFET in SC75/SC89/SOT563 Package Maximum Ratings Part SC-75 1.6 X 1.6 mm SC-89 1.6 X 1.6 mm ID VDS VGS Type Package (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V * NTA4151P SC75 -20 ±8 0.800 1.200 1.800 0.30 * NTE4151P SC89 -20 ±8 0.800 1.200 1.800 0.30 * NTZS3151P SOT563 -20 ±8 0.175 0.240 0.300 0.77 * NTA4153N SC75 20 ±8 0.600 0.700 1.000 0.50 * NTE4153N SC89 20 ±8 0.600 0.700 1.000 0.50 * NTZS3154P SOT563 20 ±8 0.400 0.700 1.000 0.67 NTA4001N SC75 20 ±8 3.000 3.500 - 0.50 SOT563 -20 ±8 0.750 1.000 1.500 0.60 p- -20 ±8 0.600 1.000 1.500 0.40 p- 20 ±8 0.400 0.700 1.000 0.40 n- Number (A) SINGLE p- n- DUAL * NTZD3152P COMPLEMENTARY SOT-563 1.6 X 1.6 mm * NTZD3155C SOT563 * Trench 67 www.onsemi.com MOSFET in SC88 Package Maximum Ratings Part Number ID VDS VGS Package (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V Type (A) SINGLE SC-70 2.0 X 2.0 mm * NTJS4151P SC88 -20 ±12 0.110 0.145 0.200 0.80 * NTS4101P SC70 -20 ±12 0.400 0.450 0.650 0.80 * NTJS3151P SC88 -12 ±8 0.060 0.090 0.160 0.92 * NTS2101P SC70 -8 ±8 0.230 0.315 0.400 0.92 NTS4001N SC70 30 ±20 1.200 2.200 4.000 0.50 * NTJD4152P SC88 -20 ±8 0.260 0.500 1.000 1.00 * NTJD2152P SC88 -8 ±8 0.300 0.460 0.900 0.78 NTJD4001N SC88 30 ±20 1.400 2.600 - 0.25 NTJD4401N SC88 20 ±12 0.375 0.440 - 0.63 -8 ±8 0.300 0.400 0.600 0.40 p- 20 ±12 0.385 0.630 - 0.40 n- -8 ±8 0.300 0.400 0.600 0.40 p- p- n- DUAL SC-88 2.0 X 2.0 mm pn- COMPLEMENTARY * NTJD4105C SC88 LOAD SWITCH * NTJD1155L * Trench SC88 20 68 n- www.onsemi.com MOSFET in ChipFET Package (V) Maximum Ratings RDS(on) (W ) (V) VGS= 10V VGS= 4.5V VGS= 2.5V VGS= 1.8V ID (A) * NTHS2101P -8 ±8 - 0.025 0.036 0.048 5.4 * NTHS4101P -20 ±8 - 0.034 0.040 0.052 6.7 Part Number VDS VGS Type SINGLE NTHS5441 -20 ±12 - 0.055 0.083 - 5.3 NTHS5443 -20 ±12 - 0.065 0.110 - 4.7 * NTHS4111P -30 ±20 - 0.042 0.070 - TBD NTHS4501N 30 ±20 0.035 0.055 - - 6.7 NTHS5404 20 ±12 - 0.030 0.045 - 7.2 * NTHD2102P -8 ±8 - 0.058 0.085 0.160 3.4 * NTHD4102P -20 ±8 - 0.095 0.135 0.210 2.8 * NTHD4401P -20 ±12 - 0.155 0.240 - 3.0 p- n- DUAL p- NTHD4502N 30 ±20 0.085 0.143 - - 3.9 NTHD4508N 20 ±12 - 0.075 0.143 - 4.2 COMPLEMENTARY 20 * NTHD3100C ±12 -20 20 NTHC5513 ±12 -20 - 0.095 0.080 0.155 0.080 0.135 0.115 0.260 0.115 0.210 - 2.8 3.1 2.1 3.1 pnpn- n- FETKY * Trench * NTHD3101F -20 ±12 - 0.095 0.135 0.210 2.8 p- NTHD4P02F -20 ±12 - 0.155 0.260 - 2.1 p- NTHD4N02F 20 - 0.080 0.115 - 3.1 n- ±12 69 www.onsemi.com MOSFET in Flip-chip Package Flip Chip 1.6 X 1.6 mm 2.0 X 2.4 mm Maximum Ratings Part Number ID VDS VGS (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V Type (A) FLIP-CHIP BGA * NTVS4101P -20 ±12 0.065 0.095 - 4.50 * NTVS4111P -20 0.021 0.024 - 5.50 ±8 p- * Trench 70 www.onsemi.com MOSFET Small Outline Packages – SOT23, SC70 Package Channel SOT23 N VDSS 30V 20V P 30V 20V 12V 8V SC70 N 30V 25V Vishay Si2316DS AOS AO3410 RDS(ON) @ 4.5V Farichild FDN372S 0.085W 0.033W 0.050W 0.400W 0.140W Si2314EDS AO3416 FDN339AN IRLML2502 NTR4103N 0.033W 0.022W 0.035W 0.045W 0.040W Si2343DS AO3401 FDN360P IRLML5203 NTR4502P 0.086W 0.065W 0.125W 0.165W 0.350W Si2323DS AO3415 FDN304PZ IRLML6402 NTR4101P 0.039W 0.043W 0.052W 0.065W 0.085W Si2333DS FDN306P IRLML6401 0.032W 0.040W 0.050W IR IRLML2803 ON NTR4503N Si2311DS NTR2101P 0.045W 0.045W Si1302DL AO7400 NTS4001N 0.700W 0.100W 1.500W SI1300DL AO7408 MMBF2201N 2.000W 0.070W 1.400W Si1304DL 0.350W 20V P 30V AO7401 0.200W 20V 12V Si1303EDL AO7411 NTS4101P 0.430W 0.120W 0.360W Si1307DL 0.290W 8V Si1305DL NTS2101P 0.280W 0.230W 71 www.onsemi.com MOSFET Small Outline Package – TSOP6 Package Channel TSOP6 N-Single P-Single RDS(ON) @ 4.5V Farichild FDC645N VDSS 30V Vishay Si3434DV 0.034W 0.033W 0.030W 0.200W 20V Si3460DV AO6408 FDC637AN IRLMS1902 0.027W 0.016W 0.024W 0.100W 0.045W 30V Si3483DV AO6403 FDC658P IRF5800 NTGS3455 0.053W 0.058W 0.075W 0.150W 0.170W 20V Si3493DV AO6409 FDC604P IRLMS6802 NTGS3443 0.027W 0.045W 0.033W 0.050W 0.065W Si3473DV FDC606P IRLMS4502 NTGS3433 0.023W 0.026W 0.042W 0.075W 12V AOS AO6400 8V Si3445ADV 30V Si3948DV AO6800 0.175W 0.075W IR IRLMS1503 ON NTGS3446 0.042W N-Dual 20V P-Dual FDC6561AN 0.145W Si3900DV FDC6401N IRF5852 0.125W 0.070W 0.090W 30V Si3993DV AO6801 0.245W 0.185W 20V Si3983DV FDC6312P IRF5850 0.110W 0.115W 0.135W Si3973DV FDC6318P 0.087W 0.090W 12V FD6506P 0.280W 8V Si3905DV 30V Si3552DV AO6601 FDC6333C 0.360W+0.175W 0.185W+0.075W 0.220W+0.150W 0.125W P+N 20V Loadswitch 20V Si3586DV AO6604 FDC6420C IRF5851 0.110W+0.060W 0.110W+0.060W 0.125W+0.070W 0.135W+0.090W Si3861DV FDC6330L NTGS1100L 0.175W 0.125W 0.080W 12V Si3863DV 8V Si3865DV FDC6331L 0.060W 0.055W 0.105W 72 www.onsemi.com MOSFET Small Outline Packages – SC88 Package SC88 Channel N-Single RDS(ON) @ 4.5V Farichild FDG315N VDSS 30V Vishay Si1426DH AOS 0.115W 0.160W 25V Si1404DH FDG313N NTJS4405N 0.350W 0.450W 0.350W 20V Si1406DH FDG327NZ 30V Si1433DH AO7405 0.260W 0.200W 20V Si1413DH FDG326P 0.115W 0.140W 0.095W 12V Si1417DH FDN306P NTJS3151P 0.085W 0.040W 0.060W 8V Si1405DL 30V Si1900DL ^FDG6303N NTJD4001N 0.700W 0.450W 1.500W FDG6335N NTJD4401N 0.300W 0.375W 0.065W P-Single IR ON 0.090W FDG316P 0.300W NTJS4151P 0.125W N-Dual 20V P-Dual Si1912EDH AO7800 0.280W 0.235W 30V ^FDG6304P 1.100W 20V 12V 8V Si1913EDH AO7801 FDG6308P NTJD4152P 0.490W 0.520W 0.400W 0.260W Si1917EDH FDG6316P 0.370W 0.270W Si1905DL NTJD2152P 0.600W P+N 30V 0.300W Si1539DL ^FDG6321C 1.700W+0.700W 20V 12V 1.100W+0.450W Si1563EDH AO7600 FDG6332C 0.490W+0.280W 0.520W+0.235W 0.420W+0.300W Si1557DH Go and replace Vishay , Farichild and IR NOW! 0.535W+0.235W 8V Si1555DL NTJD4105L 0.600W+0.385W 0.375W+0.300W Loadswitch 20V FDG6324L NTJD1155L 0.750W 0.300W 12V 8V Si1865DL 0.215W FDG6331L 73 0.260W www.onsemi.com NTHD4P02FT1-FETKY™ MOSFET Plus Schottky Rectifier Description Ultra-small eight lead package allows the integration of a MOSFET and Schottky Rectifier into one package. This is the smallest FETKY™ on the market with a maximum footprint of 3.10 X 2.00 mm to optimize board space. Independent pin out to each device to increase design flexibility, i.e. use Schottky as blocking diode or in parallel with body diode. Applications Any handheld application, including Cellular phones, Digital Cameras, MP3s, and PDAs that requires DC-DC converters (buck, buck-boost, and synchronous rectification). Charge control in portables Features New smaller ChipFET™ in 8 lead package (1.9 X 3.0 mm) P-Channel MOSFET, VDDS= 20V, RDS(on)=130mΩ @ VGS = 4.5V SCHOTTKY VR=20V, with Low VF =0.32V @ 1 Amp Benefits Product Availability: Samples Now Production Jan/03 Previously only available in SO-8 package (5 X 6 mm) Higher efficiency, reduced battery drain. Less voltage drop across the diode. NTHD4P02F Rsn s Vin Anode Cathode Anode Cathode Source Drain Gate Drain FETKy More Information Online OUT See www.onsemi.com for: – Datasheet –Case outline Vcc Host or Led Host Processor NCP1800 ISNS VSNS CFLG COMP/DIS ISEL Rcomp Cin Ccomp Risel 60K Cout Gn d 74 www.onsemi.com MOSFET Power Management (Charging) Signal MOSFETs TSOP-6 NTGS3441 NTGS3443 3.3A 3.1A 135mohm@2.5V 100mohm@2.5V ChipFET NTHS5441 NTHS4101P 3.9A 4.8A 60mohm@4.5V 34mohm@4.5V Schottky Rectifiers (Reverse current protection) Powermite MBRM120LT3 MBRM120ET3 MBRM130LT3 20V 0.45V@1A 20V 0.53V@1A (Low leakage) 30V 0.45V@1A SOD123 20V 0.385V@0.5A MBR0520LT3 MBR0520 (20V,0.5A) SOD123 Schottky MBRM120 (20V,1A) SOD123 Schottky FETky (MOSFET/Schottky/肖特基) ChipFET 75 NTHD4P02F NTHD3101F 20V, 1.0A 20V,2A 155mohms@4.5V www.onsemi.com MOSFET FETky Applications NTHD4P02F NTHD4N02F Rsn s Vin FETKy OUT Vcc Host or Led Host Processor NCP1800 ISNS VSNS CFLG COMP/DIS ISEL Vin PWM Control V o Rcomp Cin Ccomp Risel 60K Cout Buck using N-Channel FETKy NTHD4N02FT1 Gn d Charging Circuit using P-Channel NTHD4N02F NTHD4P02F Boost using N-Channel FETKy NTHD4N02FT1 Buck using P-Channel 76 www.onsemi.com MOSFET High Side Power Management - Load Switch Trench products will combine small N-Ch with Large P-Ch Application: Combines level shift with power switch Uses small N-Ch to drive large P-Ch Reduces board space Targeting trench and smaller packages Products: NTHC5513, ChipFET, Complementary, 20V N&P NTJD4101C, SC-88, Complementary, 20V N & 8V P NTJD4105C, SC-88, Load Switch, 20V N & 8V P For discrete see next page 77 www.onsemi.com MOSFET High Side Load Switch 高端负载开关 Switch is used in Positive side of Power Supply 开关用在电源的正极 The lower the RDS(on) the higher the system efficiency RDS(on)越低,系统效率越高 Package vary depending on current applied 封装随着应用的电流改变 (+) Inputs from: (+) •Battery Solution: 解决方案 ON Semiconductors P-Channel trench provides lowest RDS(ON) in Industry 安森美半导体的P-沟道器件提供业内最低的RDS(ON) Offering a variety of packages options depending on the current required 根据要求的电流提供各种封装选择 Regulator •LDO (+) NTHS2101PT1 NTHS4101PT1 NTGS4111PT1 NTR2101PT1 NTR4101PT1 NTVS4101PT1 NTJS3151PT1 NTJS4151PT1 NTS2101PT1 NTS4101PT1 NTZS3153PT1 ChipFET ChipFET TSOP-6 SOT-23 SOT-23 FlipChip SC-88 SC-88 SC-70 SC-70 SOT-563 Key Parameter 主要参数 Samples 样品 Release 发布 8V, 25 mohms@4.5V 20V, 34 mohms@4.5V 20V, 40 mohms@4.5V 8V, 50 mohms@4.5V 20V, 55 mohms@4.5V 20V, 65 mohms@4.5V 12V, 75 mohms@4.5V 20V, 110 mohms@4.5V 8V, 230 mohms@4.5V 20V, 400 mohms@4.5V 20V, 600 mohms@4.5V Now Now Oct Sept Dec Dec Dec Dec Dec Dec Jan 78 现在 现在 十月 九月 十二月 十二月 十二月 十二月 十二月 十二月 一月 Now Now Q1 04 Q1 -04 Q1-04 Q1-04 Q1-04 Q1-04 Q1-04 Q1-04 Q1-04 Logic •Etc. (-) Package 封装 ASIC •Switching (+) Device 器件 Display P.A. PMU 现在 现在 2004年1季度 2004年1季度 2004年1季度 2004年1季度 2004年1季度 2004年1季度 2004年1季度 2004年1季度 2004年1季度 www.onsemi.com MOSFET N-Channel Level Shifter N-沟道电平转换器 Device 器件 NTA4001N NTS4001N NTJD4001N Package 封装 (+) Input Volts (+)输入电压 Source 源极 P-Ch P-沟道 (+) Gate Drive from Controller or uProcessor 来自控制器或微 处理器的栅极驱 动 Key Parameter 主要参数 Drain 漏极 Gate 栅极 N-Ch N-沟道 Samples 样品 RTM SC-75 20V, 2.5Ω@2.5V, ESD Gate 20V, 2.5Ω@2.5V, ESD 栅极 Now 现在 Now 现在 SC-70 30V, 1.5Ω@2.5V, ESD Gate 30V, 1.5Ω@2.5V, ESD 栅极 Now 现在 Now 现在 SC-88 30V, 1.5Ω@2.5V, ESD Gate 30V, 1.5Ω@2.5V, ESD 栅极 Now 现在 Now 现在 79 (+) Load 负载 Application: 应用: Need small N-Ch as level shifter to drive large P-Ch 需要小型N-沟道作为电平移动器来驱动大型 P-沟道 N-Ch has low current requirement N-沟道要求小电流 Targeting Smaller packages 目标在于更小型封装 www.onsemi.com MOSFET Power Management (Load Switch) 电源管理(负载切换) 负载开关 Application: 应用: Combines level shift with power switch 结合了电平移位和功率切换 Uses small N-Ch to drive large P-Ch 使用小N-沟道来驱动大的P-沟道 Reduces board space 减小了板空间 Targeting trench and smaller packages目标在于沟道和更小的封装 功率放大器 负载开关 显示器 电池 负载开关 负载开关 电源管理 负载 Device 器件 NTHC5513 NTJD4105C NTJD1155L Package 封装 ChipFET SC-88 SC-88 逻辑器件 Key Parameter 关键参数 Samples 样品 RTM 20V, 155 mohms@4.5V Now 现在 Now 现在 8V, 340 mohms@4.5V Now 现在 Now 现在 8V, 150 mohms@4.5V Mar 三月 Apr 四月 80 www.onsemi.com MOFET Example Digital processing Camera/LCD controller Melody Generator ?? Power MOS ON semiconductor NTHS5445T1/ NTHS2101P Power management 81 RF power amplifier Camera module RF Transceiver www.onsemi.com Audio Amplifiers ON Advantage Device can be driven directly off the battery where the competition requires an additional part. Cancellation circuitry for pop and click noise No output capacitors on the stereo headset amplifier is an advanced feature to reduce part count. Device NCP2890DMR2 NCP2890AFCT2 NCP2809ADMR2 NCP2809BDMR2 NCP4894 NCP4896 NCP2820 Description Status 1W mono audio amplifier in a micro 8 A 1W mono audio amplifier in a 9-pin Bump A 135 mW stereo headset audio amplifier A (no output capacitors required) 1W mono audio amplifier with Fully S Differential Inputs, 9-bin uBump/Micro10 (RTM May 04) 1W mono audio amplifier with Earpiece S Driving Capability, 9-bin uBump/Micro10 (RTM May 04) Class D, 2W mono audio amplifier Developmemt Demo Board Y Y Y A = active, S = sampling RTM = release to market 82 www.onsemi.com Audio Amplifiers NCP2890 1 watt Audio Amplifier Description The NCP2890 is an audio power amplifier capable of delivering 1W of continuous average power to an 8 W load from a 5V-power supply, and 320 mW to a 4 W load from a 2.6V power supply. The NCP2890 provides high quality audio while requiring few external components and minimal power consumption. It features a low-power consumption shutdown mode, which is achieved by driving the shutdown pin with logic low. The NCP2890 contains circuitry to prevent from “pop and click” noise that would otherwise occur during turn-on and turn-off transitions. For maximum flexibility, the NCP2890 provides an externally controlled gain (with resistors), as well as an externally controlled turn-on and turn-off times (with the bypass capacitor). Features Benefits • • • • • • • • • • • • Handfree operations 1.2 W to an 8 W load from a 5V power supply 520 mW to an 8 W load from a 3.3V power supply 700 mW to a 4 W load from a 3.3V power supply 2.5V – 5.5V operation Ultra low current shutdown mode External gain configuration capability External turn-on and turn-off time configuration capability Thermal overload protection circuitry Extremely high performances : PSRR and THD+N « Pop and click » noise protection circuit Ultra small Microbump9, Micro8 packages • • • • Applications • • • • Wireless phones PDAs Portable Electronic Devices Electronic Toys Earpiece operations Operates directly from 1 cell Li+ or 3 cell NiMH batteries. Extends battery life Flexibility • No LDO needed, High quality of sound • User friendly • Saves PCB surface Ordering Information • NCP2890DMR2 in Micro8, 4000 per reel • NCP2890FCT1 in Microbump9, 3000 per reel More Information Online: www.onsemi.com/ncp2890 83 www.onsemi.com Audio Amplifiers NCP2890 Typical Applicaton 音频 输入 旁路 关断控制 关断 84 www.onsemi.com Audio Amplifiers NCP2890 Output Power vs Supply Voltage Output Power (mW) 1600 1400 1200 1000 800 600 400 3.0 3.5 4.0 Power Supply (V) 4.5 5.0 THD+N=1% THD+N=10% NCP2890 / Output Power vs Supply Voltage. 85 F=1kHz, RL=8W www.onsemi.com Audio Amplifiers NCP2890 : Parametric Analysis 10,00 -30 -40 1,00 PSRR (dB) THD+N (%) -35 LM4890 0,10 NCP2890 LM4890 -45 -50 -55 -60 -65 0,01 0 200 400 600 800 1000 1200 NCP2890 -70 1400 10 Pout (mW) THD+N vs. Pout Cbypass=1µF 100 1 000 Frequency (Hz) 10 000 PSRR vs. Vp Cbypass=1µF Vp=5V, RL=8W, Av=2, F=1KHz Vp=5V, RL=8W, Av=2, Rin=10W, VRipple=200mVpk-pk 10,00 -30 LM4890 1,00 PSRR (dB) THD+N (%) -35 -40 0,10 -45 -50 LM4890 -55 -60 -65 -70 -75 -80 NCP2890 0,01 0 100 200 300 400 10 500 100 1 000 10 000 Frequency (Hz) Pout (mW) THD+N vs. Pout Cbypass=1µF Vp=2.6V, RL=4W, Av=2, F=1KHz NCP2890 PSRR vs. Vp Cbypass=1µF Vp=2.6V, RL=8W, Av=2, Rin=10W, VRipple=200mVpk-pk 86 www.onsemi.com Audio Amplifiers NCP2890 : Parametric Analysis Parameter Conditions Input Vp=5V, No Load Quiescent Power Vp=5V, 8 Ohms Supply current Vp=2.6V, No Load Shutdown current Output Offset Voltage (Lower is Vp=5V NCP2890 LM4890 TS4890 TPA6203A1 NCP4894 SE 1.7 2.1 1.5 1.0 SE 4 5 2.6 2 SE 6 no data 5 1 Differential 1.7 no data 1.7 0.9 Differential 2.1 2.2 1.9 20nA 20 50 20 9 1 Unit mA (typ) µA (max) mV (max) better for battery life) THD+N (distortion) Vp=2.6V, Av=2, 0.04% 4% RL=4ohms,F=1khz, Pout=300mW PSRR (power Vp=2.6V, Av=2, -75dB -42dB supply ripple RL=8ohms, F=1kHz, rejection) Vripple=200mVp-p Micro8/Msop8 3.0 x 4.9 mm 3.0 x 4.9 package size (DMR2 mm (MMX suffix) suffix) Microbump/BGA 1.45 x 1.45 1.51 x 1.51 package size mm (FCT1 mm (IBLX suffix) suffix) Micro10 package size 87 0.2% 0.08% 0.007% -77dB -90dB (Av=1), 75dB (Av=5) -85 3.0 x 4.9 mm (IST suffix) not available not available 2.0 x 2.0 mm (GQV suffix) 1.45 x 1.45 mm (FC suffix) 3mm×5mm (DM suffix) www.onsemi.com Audio Amplifiers NCP2809: NOCAP™ 135mW Stereo Headphone Power Amplifier Description Already RTM The NCP2809 is a cost-effective stereo audio power amplifier capable of delivering 135mW per channel of continuous average power per channel into 16 W loads. The NCP2809 audio power amplifier is specifically designed to provide high quality output power from low supply voltage, requiring very few external components. Since NCP2809 does not require bootstrap capacitors or snubber networks, it is optimally suited for low power portable systems. NCP2809A has an internal gain of 0dB while specific external gain can externally be set with NCP2809B . If the application allows it, the virtual ground provided by the device can be connected to the middle point of the headset. In such case, the two external heavy coupling capacitors are Applications useless. Otherwise, you can also use both outputs in single ended mode with external coupling capacitors. Portable stereo Due to its excellent PSRR, it can be directly connected to the battery, saving the use of a LDO. MP3 Player Cellular Phone Electronic Toys Personal Computer Ordering Information NCP2809ADMR2, Micro10, 4000 per reel NCP2809BDMR2, Micro10, 4000 per reel More Information Online: www.onsemi.com/ncp2809 88 www.onsemi.com Audio Amplifiers NCP2809 Parametric Analysis 10 10 Vp=3.3V Vp=2.4V 1 THD+N (%) THD+N (%) 1 Vp=5V 0.1 Vp=3V, Pout=30mW Vp=2.4V, Pout=20mW 0.1 0.01 0.01 0.001 0.001 Vp=5V, Pout=75mW 0 20 40 60 80 100 120 140 10 160 100 1 000 10 000 100 000 Frequency (Hz) Output Power (mW) THD+N vs.. Pout @ RL=16W, f=1kHz THD+N vs.. Frequency @ RL=16W -60 -10 -20 Vp=3V, Pout=30mW Vp=5V PSRR (dB) Crosstalk (dB) -30 Vp=2.4V, Pout=20mW Vp=5V, Pout=75mW -40 -50 -60 -70 -80 -90 -100 Vp=2.4V Vp=3V -110 -70 10 100 1 000 10 000 10 100 000 100 1 000 10 000 100 000 Frequency (Hz) Frequency (Hz) PSRR @ Inputs grounded, Vripple=200mV pk-pk, RL=16W Crosstalk vs. Frequency @ RL=16W 89 www.onsemi.com Audio Amplifiers NCP2809 Application Turn On sequence Zoom : Math2=V(load)=Ch3-Ch1 Turn On sequence : Math2=V(load)=Ch3 -Ch1 : Ch1 = OUT_R Ch2 = VMC Ch3 = OUT_L Math1 = Vload_R = Ch1 - Ch2 Math2 = Vload_L = Ch3 - Ch2 Turn Off sequence : Math2=V(load)=Ch3-Ch1 Turn Off sequence Zoom : Math2=V(load)=Ch3-Ch1 90 www.onsemi.com Audio Amplifiers NCP2809A (Int Gain) / B (Ext Gain) • • • • • • • • • • • 2.2V~5.5V Supply 135mW @ 16Ω 5V Ultra Low Iq: 0.6µA max Virtual Ground: Brilliant accuracy excellent Crosstalk, Iq and offset “Pop & Click” noise immunity Excellent PSRR (90dB) Directly supplied from Vbat THD+N of 0.007% (typ) Only 4 External Components for NCP2809A 8 External Components only for NCP2809B µ10 Package (15mm²) 91 www.onsemi.com Audio Amplifiers Vcc Output Power 16 Ohms/3V Iq (Shutdown) External SD Pop & Click PSRR Vbat -> Vcc THD+N External Components Package Type Package Size ON NCP2809 2.5V ~ 5.5V 45mW THDN=1% 0.6µA Yes Yes (brilliant) 90dB Yes 0.007% (typ) 4 (A version) 8 (B version) µ10 15mm² NCP2809 Benchmark National LM4911 2.0V ~ 5.5V 40mW THDN=1% 1µA Yes Yes (partially) 55dB No 0.3% (max) 7 µ8 15mm² 92 Maxim MAX4410 1.8V ~ 3.6V 80mW THDN=1% 6µA Yes Yes 90dB No 0.005% (typ) 5 (MAX4411) 9 (MAX4410) µBump/TSSOP 4mm²/30mm² www.onsemi.com Audio Amplifiers NCP4894 1 Watt Fully Differential Audio Amplifier Description The NCP4894 is a fully differential audio power amplifier designed for portable communication device applications. This feature and the excellent audio characteristics of the NCP4894 are a guarantee of a high quality sound, for example, in mobile phones applications. With less than 0.01% distortion (THD + N), the NCP4894 is capable of delivering 1.0 W of continuous average power to an 8.0 load from a 5.0 V power and still 250 mW from 2.6 V. Features Fully Differential 1.2 W to an 8 W load from a 5V power supply 2.5V – 5.5V operation Ultra low current shutdown mode External gain configuration capability External turn-on and turn-off time configuration capability Thermal overload protection circuitry Extremely high performances : PSRR and THD+N « Pop and click » noise protection circuit Ultra small Bumped die Applications Cell Phone Portable stereo MP3 Player Electronic Toys Personal Computers Benefits Drive capability for Polyphonic ringer or Speakerphone Operates directly from 1 cell Li+ or 3 cell NiMH batteries. Extends battery life Flexibility No LDO needed, High quality of sound User friendly Saves PCB surface Ordering Information NCP4894 in µBump-9 and in µ-10 93 www.onsemi.com Audio Amplifiers 音频输入 NCP4894 Typical Application Schematic 旁路 旁路 VMC桥 SD选择 差动 关断控制 SD模式 旁路 94 www.onsemi.com Audio Amplifiers 音频输入 NCP4894 Stereo Application Schematic 旁路 旁路 VMC桥 差动 SD选择 关断控制 SD模式 旁路 95 www.onsemi.com Audio Amplifiers NCP4896 1W Audio Power Amplifier with Earpiece Driving Capability Packaging Through a dedicated SE/BTL pin, the user can drive either a single-ended 32Ω load (earpiece) up to 90mW, or a bridge-tied 8Ω load (loudspeaker) up to 1W. It saves the need of a second audio amplifier or an analog switch for the earpiece . The NCP4896 provides high quality audio while requiring few external components and minimal power consumption. 9 pin Flip-Chip CSP (1.5x1.5mm) Product Ordering Information NCP4896FCT1G (9 pin Flip-Chip CSP) 3000 Units Tape and Reel, G suffix stands for Pb-free Features Benefits 2.2V to 5.5V operation 1.1W to an 8Ω load from a 5V supply, THD+N<0.008% Ultra Low Shutdown Current (20nA typical) “Pop & Click” noise protection circuit Superior THD+N: 0.007% at 1W Superior PSRR (70dB) Very Few External Components Supports wide range of battery power applications High Output Power Extends Battery Life Excellent Sound Quality Excellent Sound Quality Direct Connection to Battery, Saving an LDO Saves Manufacturing Cost Market & Applications • • • • • Cellular Phone, PDA, DSC DVD Player, Audio/Video Players Personal Computer, Sound Card Electronic Toys Portable mono loudspeaker & earpiece 96 www.onsemi.com Audio Amplifiers NCP4896 1W Audio Power Amplifier with Earpiece Driving Capability • • • • • • • • • • 2.2V~5.5V Supply Through a dedicated SE/BTL pin, the user can drive either a single-ended 32Ω load (earpiece) up to 90mW, or a bridge-tied 8Ω load (loudspeaker) up to 1W. → Saves the need of a second audio amplifier or an analog switch for the earpiece . High Output Power: → 1.1W with 0.008% THD+N @ 8Ω, 5V Ultra Low shutdown current: → 20nA typical Very Low quiescent current: → 2mA typical at BTL (bridge-tied load) → 1mA typical at SE (single-ended) “Pop & Click” noise protection Superior THD+N of 0.007% @ 1W, 8Ω, 5V Very Low Noise floor: 15µVrms (SE) & 35µVrms (BTL) Excellent PSRR (-70dB): → Directly supplied from Vbat. Save a LDO 9 pins Flip-Chip CSP ( 1.5x1.5mm) 97 www.onsemi.com White LED Boost Drivers Typical Applications Small Color LCD Screens Cell phones, Digital Cameras, PDAs, and GPS Portable electronics and instrumentation # of LEDs in Device NCP1403 Package Special Attributes SOT23-5 Low input voltage 1.2V~5.5V. Suits 2-cell Alkaline/NiMH applications. NCP5007 SOT23-5 High efficiency up to 86%. Suitable for LiIon applications and 3 cell NiMH as well. NCP5008/9 Micro10 Serial data input pin allows LED brightness control by 牌 . Does not need a sense resistor Series Parallel 4 8 Status A Eval. Board Yes 5 15 S (RTM Jun 04) Yes 3-4 10 A Yes A = active RTM = release to market ON Advantage Low end applications: The NCP1403 with low input voltage is suitable for 2-cell Alkaline/NiMH applications. Feature Rich applications: The NCP5009 automatically adjust screen brightness based on ambient light and provides digital dimming via serial MPU interface Mainstream: NCP5007 with high efficiency > 80% and ability to drive up to 5 LEDs in Series 98 www.onsemi.com White LED driver What about a Charge Pump? Efficiency 90% 60% Inductive Boost (NCP5007) Dual mode fractional charge-pump Battery usable range 2.7v 3.0v 3.3v 3.6v 3.9v VBAT 4.2v Fig. 1 Efficiency as a function of Battery voltage 99 www.onsemi.com NCP5007 Compact White LED Boost Driver White LED driver Description Applications The NCP5007 is a very high efficiency boost converter operating in current loop control mode to drive Light Emitting Diode. The current mode regulation allows a uniform brightness of the LED’s. Features Benefits Inductor based converter Brings Built-in over-voltage protection 2.7 to 5.5V Input voltage range Vout up to 22V 1µA Quiescent Supply Current Includes dimming function by PWM on either enable pin or feedback pin Only 5 external components High frequency switching mode Zero cross switching at no current SOT23-5 higher efficiency up to 86% (10 to 20% higher than charge-pump) Saves a zener diode at output pin Operates directly from 1 cell Li+ or 3 cell NiMH batteries Allowing up to 5 LEDs in series or 15 as a total. Extends battery life For smooth brightness changes Lowest part count and easier design Allows small inductor (22uH) Low noise DC/DC converter, Reduces EMI More Information Online: Ordering Information NCP5007SNT1G Backlight for small color LCD screens High Efficiency Step up converters Portable devices T&R Units 3000 http://www.onsemi.com/ncp5007 100 www.onsemi.com NCP5007 Compact White LED Boost Driver White LED driver Description The NCP5007 is a very high efficiency boost converter operating in current loop control mode to drive Light Emitting Diode. The current mode regulation allows a uniform brightness of the LED’s. Inductor supply can be higher than Vcc Features 2.7 to 5.5V Supply voltage Up to 85% efficiency Vout up to 22V (5 LEDs in series) Over-voltage protection Thermal protection 3µA Quiescent Supply Current Shutdown control Only 5 external components High frequency switching mode Low noise operation Vcc independent from Vbat SOT23-5 package Dimming function by PWM on EN or FB pins Built-in Overvoltage Protection, saves a Zener Low 0.2V reference voltage minimizes the efficiency loss in R1 101 www.onsemi.com White LED driver NCP1403 White LED Boost Driver (suitable for low Vin) Features: • Vout up to 15V@20mA with Vin>2.7V, or 10V@20mA with Vin>1.8V • Uniform brightness through series configuration 1mF NCP1403 (SOT23-5) RN = 0.8V/20mA = 40 ohm, Pdiss = R.(20mA)² = 16mW 102 www.onsemi.com NCP5007* Compact White LED Boost Driver White LED driver Description The NCP5007 is a very high efficiency boost converter operating in current loop control mode to drive Light Emitting Diode. The current mode regulation allows a uniform brightness of the LED’s. Applications Backlight for small color LCD screens High Efficiency Step up converters Portable devices Features Benefits Inductor based converter Built-in over-voltage protection 2.7 to 5.5V Input voltage range Vout up to 22V 1µA Quiescent Supply Current Includes dimming function by PWM on either enable pin or feedback pin Only 5 external components High frequency switching mode Zero cross switching at no current Brings higher efficiency (up to 83%) than charge-pump Saves a zener diode at output pin Operates directly from 1 cell Li+ or 3 cell NiMH batteries Allowing up to 5 LEDs in series or 15 as a total. Extends battery life For smooth brightness changes Lowest part count and easier design Allows small inductor (22uH) Low noise DC/DC converter, Reduces EMI Ordering Information More Information Online: TBD TBD SOT23-5 T&R Units 3000 103 *Coming soon www.onsemi.com NCP5007* Application Circuit White LED driver Built-in over-voltage Protection Saves a Zener diode at Vout pin. *Coming soon 104 www.onsemi.com White LED driver NCP5007 Additional information *Coming soon 105 www.onsemi.com White LED driver Competitor Parametric Analysis Com pe titor Part num be r Maxim Linear Tech MPS National TI Toko ON MAX1848 LT1932 LT1937 MP1523 LM2703 TPS61040 TK11850 NCP1403 NCP5007 Analog or DAC Control PWM PWM PWM PWM PWM PWM PWM PWM NO NO NO NO NO NO NO NO NO SOT23-8 SOT23-6 SOT23-5 SOT23-5 SOT23-5 SOT23-5 SOT23L-8 SOT23-5 SOT23-5 3x3 mm 3x3 mm 3x3 mm 3x3 mm 3x3 mm 3x3 mm 3.3x3.5 mm 3x3 mm 3x3 mm CURRENT CURRENT CURRENT CURRENT CURRENT CURRENT CURRENT CURRENT CURRENT Se ns e Re s is tor Total Pas s ive Part Count EXTERNAL INTERNAL EXTERNAL EXTERNAL EXTERNAL EXTERNAL EXTERNAL EXTERNAL EXTERNAL 6 6 6 6 6 6 7 6 5 Input Voltage 2.6 to 5.5V 1 to 10V 1 to 10V 2.7 to 25V 2.2 to 7V 1.8 to 6V 2.3 to 10V 1.2 to 5.5V 2.7 to 5.5V up to 13V up to 36V up to 36V up to 25V up to 21V up to 28V up to 20V up to 15V up to 22V YES NO NO NO NO NO NO NO YES 3 8 6 6 4 6 4 4 5 6 ? ? ? ? ? ? 10 15 NA (1) NA (1) 0.1V 0.4V 1.2V 1.2V 0.5V 0.8V 0.2V 83% 78% 82% 82% 75% 75% 73% 72% 83% 1.2MHz 1.2MHz 1.2MHz 500KHz 1MHz 1MHz 800kHz 300kHz 600kHz Inductor value 33uH 6.8uH 22uH 10uH 10uH 10uH 22uH 22uH 22uH Shutdow n curre nt 0.3µA 0.1µA 0.1µA 1µA 0.1uA 0.1uA 0.1uA 0.3µA 1µA High High High Medium Medium Medium Medium Medium Medium LED brightne s s control Autom atic brightne s s control Pack age Pack age Size Re gulation Mode Output voltage Ove r-voltage prote ction Max num be r of LEDs in s e rie s Max num be r of LEDs in paralle l Fe e dback voltage Efficie ncy (2) @ Vin=3.6V, 3LEDs (s e rie s ), 15m A Sw itching fre que ncy Price High Vin below 2V ef f iciency => suits 2-cell 83%, OverAlkaline/NiMH voltage applications protection Se lling points Note : (1) 'NA' = not applicable. (2) Ef f iciency = LED output pow er / Input pow er. 106 www.onsemi.com White LED driver NCP1406 25V PFM Step-Up DC-DC Converter for OLED Bias • • • • • • • Sample now, MP June 04 25V low side switch, 1.2V Feedback Voltage Max output current: 50mA @ Vout=15V, 25mA @ Vout=25V 85% Efficiency at Vout = 25 V, Iout = 25 mA, Vin = 5.0V 85% Efficiency at Vout = 15 V, Iout = 50 mA, Vin = 5.0V Low Operating Current of 15 uA (Not Switching) Ceramic Capacitors PFM switching up to 1MHz L 4.7 mH D Applications • • • • • Cell Phone OLED Driver PDAs Digital Cameras Handheld Games Portable Audio MBRM130LT1 VIN VOUT 1.8 V to 5.5 V 25 V CE C1 10mF LX NCP 1 5 FB C2 4.7mF C3 5 pF to 150 pF 2 R1 Enable VDD GND 3 4 R2 C4 150pF 107 www.onsemi.com New Flash Concept – Ultra Bright White LED White LED Sanyo SonyEricsson Casio 108 www.onsemi.com Flash LED Suppliers • Luxpia – LED part number: LWH1033 • Continuous 20mA max • Pulse 100mA max – Web site: www.luxpialed.com • Lumileds – LED part number: Luxeon DS25 • Continuous 350mA max • Pulse 1000mA max – Application note: Lumiled DR01 – Web site: www.lumiled.com 109 www.onsemi.com High Current LED Driver for Flash/Torch application To drive ultra bright white LED, a current of 100mA to 1000mA is required, thus high current boost DC-DC converter is required. Input Output Typ Device Topology Frequency Voltage Voltage Max Current Efficiency NCP1406 PFM 1MHz 1.2-5.0V up to 25V 100mA pulse 85% @12V; 50mA continuous @15V; 25mA continuous @25V NCP1421 PFM 1.2MHz 1.0-5.0V 1.5-5.0V 600mA 94% NCP1422 PFM 1.2MHz 1.0-5.0V 1.5-5.0V 1A pulse; 800mA continuous 94% Package SOT23-6 Features High voltage output for serial LED connection Status S (MP Jun 04) Micro8 Sync-rect, True-cutoff, Low-battery-detect Sync-rect, True-cutoff, Low-battery-detect MP DFN10 MP S = sample, MP = mass production 110 www.onsemi.com NCP1406 Flash LED Driver (up to 100mA pulse with 3 LED in serial connection) L1 4.7 mH MBR05 2 0LT1 D1 TP1 I LED V IN 3 .0V to 5.5V TP2 GND V OUT C1 22 mF 6.3 V U1 JP1 ON LX CE 1 2 TP4 GND CE OFF C2 5 10 mF 16 V FB Control signal TP3 NCP1406 White LED X 3 100mA pulse Luxpia LHW1033 GND VDD 3 6 I LED(DC) = 1. 19 V R1 111 R1 12 W www.onsemi.com NCP1421 LED Flash/Torch Driver (up to 5V, 700mA pulsed) Lumileds Luxeon I or III Li-Ion Cell • • • • • Constant Current Control. This circuit regulates the current flowing through the White LED. It reduces driving voltage headroom requirements and lot-to-lot brightness variation due to LED forward voltage variation. The effective feedback voltage (and hence the power loss) is reduced by using the voltage divider of R1, R2 and R3. NCP1421 is 600 mA Sync-Rect PFM Step-Up DC-DC Converter with True-Cutoff and Ring-Killer NCP1421True-Cutoff Function Reduces Device Shutdown Current to typically 50 nA Micro8 package (3 x 4.9mm) 112 www.onsemi.com NCP1422 LED Flash/Torch Driver (up to 5V, 1A pulse, 800mA continuous) up to 1A pulse, 800mA continuous NCP1422 Li-Ion Lumileds Luxeon DS25 Cell • • • • • Constant Current Control. This circuit regulates the current flowing through the White LED. It reduces driving voltage headroom requirements and lot-to-lot brightness variation due to LED forward voltage variation. The effective feedback voltage (and hence the power loss) is reduced by using the voltage divider of R1, R2 and R3. NCP1422 is 800 mA Sync-Rect PFM Step-Up DC-DC Converter with True-Cutoff and Ring-Killer NCP1422 True-Cutoff Function Reduces Device Shutdown Current to typically 50 nA DFN10 package (3 x 3mm) 113 www.onsemi.com DC-DC Buck Converters Key Features Unique configurations to efficiently handle varying current load of microprocessors and DSPs to provide lowest quiescent current under light loads and high efficiency at normal load External sync pin configurations to minimize spurious frequencies and harmonics Space efficiency micro-packaging including bumped die for some products Device Input voltage Topology Frequency NCP1500 PWM/Linear External Sync, 270~630kHz 2.7-5.4V NCP1501 PWM Sync Rect /Linear External Sync, 450-1000kHz NCP1510 NCP1511 NCP1512 PWM Sync Rect/Pulsed External Sync, 450-1500kHz, Internal 1MHz 2.7-5.2V NCP1520 PWM/PFM Output voltage 1.0,1.3,1.5, 1.8V Max Current Typ Eff Package Features Status Can program to work in Micro8 A Linear LDO Regulator mode User can program the IC to Baseband Micro8 work in Linear LDO Regulator A Power supply mode S (RTM Baseband Ultra Low 14 uA Iq at light starting uBump9 loads from Power supply May 04) 300mA 91% 2.7-5.2V 1.05,1.35,1.57,1.8 300 mA 93% 1.05,1.35,1.57,1.8 1.0,1.3,1.5,1.89 2.5,2.85,3.0,3.3 300mA 94% External Sync, 10-22MHz (div20) 2.7-5.2V Ext Set - 0.4-3.4V Internal 1MHz 800mA 94% uBump12 Externally set Compensation, Resistor Divider sets Vout, 9mA LDO included S (RTM Sep 04) PA Power supply Baseband Power supply NCP1530 PWM/PFM 600kHz 2.0-5.5V 2.5-3.3V 600mA 92% Micro8 External Sync up to 1.2 MHz A NCP1550 PWM/PFM Controller 0-600kHz 2.5-6.0V 1.8-3.3V 2000mA (ext switch) 90% SOT23-5 Enable pin A Typical Applications Cell Phone, DSC, PDA, WLAN Card, Portable Electronics A = active, S = sampling RTM = release to market Battery operated devices - especially those driven by 1-cell Lithium or 3-cell alkaline/NiMH battery 114 www.onsemi.com NCP1501 Buck Converter with Synchronous Rectification and LDO Mode Description NCP1501 is a dual mode regulator that operates either as a PWM Buck Converter or as a Low Drop Out Linear Regulator. If a synchronization signal is present, the NCP1501 operates as a current mode PWM converter with synchronous rectification. The synchronization signal allows the user to control the location of the spurious frequency noise generated by a PWM converter. Linear mode is active when a synchronization signal is not present. The NCP1501 configuration allows an efficient high power operation and low noise during system sleep modes. Features Benefits Synchronous Rectification in PWM Mode (>300 mA Iout) and 800 mA peak inductor current Linear Mode Operation at Low Loads up to 50 mA Integrated MOSFETs, Feedback Circuit and Slope Compensation Current Mode PWM with Cycle by Cycle Current Limit Designed for use with ceramic capacitors Operating Frequency Range of 500 to 1000 kHz Thermal Limit Protection Shutdown Current Consumption of 0.2 mA Digitally programmable output voltages 1.05, 1.35, 1.57, and 1.8V Ordering Information NCP1501DMR2: Micro8TM 4000 units T&R Applications Cell Phone Baseband Power Supply Wireless LAN Cards Supplies for DSP Cores Portable Applications High Efficiency up to 92.5% for Medium to High Loads Low Noise and Low Power Consumption for Light microprocessor loads and standby Reduces Part Count Fast Transient Response Lower component cost,small size Reduces Inductor Size Safety Protection Extends Battery Life User Friendly and Allows Dynamic Voltage Management More Information Online: www.onsemi.com/ncp1501 115 www.onsemi.com NCP1501 Buck Converter with Synchronous Rectification and LDO mode • Combines the efficiency of PWM for Large Loads and LDO Low Iq for Standby • LDO Mode Eliminates PFM Mode Spikes • Vout 1.05, 1.35, 1.57, 1.8 V, Iout – 300 mA PWM mode, 50 mA LDO mode • Fully integrated compensation for minimum parts count 50% LX Vbat Cin 10u Q1 I lim DC/DC Cntrl Sync SHD 10uH Q3 Vout LDO 40% 30% FB EA LDO Cntrl L1 CB0 CB1 Cout 10u Forced PFM 20% 3.6 Vin 1.8 Vout 10% Q2 0 200 400 600 800 1000 Iout (uA) 116 www.onsemi.com NCP1501: Cross Reference Company Part Number ON Semiconductor National Semiconductor Linear Technology MicroChip NCP1501DMR2 LM2612ABP LM2612BBP LTC1878EMS8 MCP1601T-I/MS MCP1601-I/MS Compatibility No Pin For Pin Compatible Parts 450 kHz to 1.0 MHz External Sync Only 600 kHz Oscillator / 500 to 1000 kHz 550 kHz Oscillator / 400 to 700 kHz 750 kHz Oscillator / 850 to 1000 kHz PWM / LDO PWM / PFM PWM / PFM / Burst PWM / PFM 300 mA 300 mA (B suffix) or 400 mA (A suffix) 600 mA 500 mA 92% 88% 90% 92% Iq @ Iout = 0 32 uA 150 uA 10 uA 119 uA Efficiency @ 100 uA 38% 23% 73% 25% Internal Internal External External Micro 8 (MSOP 8) 10 Pin uBump MSOP 8 MSOP 8 Frequency Modes Output Current Efficiency @ 1.8 Vout Compensation Package 117 www.onsemi.com NCP1510/11/12 Ultra Low Quiescent Current Buck Regulator • • • • • • • MP Starting Q2 2004 Dual Mode PWM/Pulse Mode for Low Iq (14 uA) in Standby Sync or Internal 1.0 MHz Oscillator Vout 1.05, 1.35, 1.57, and 1.8V (NCP1510) Vout 1.0, 1.3, 1.5, and 1.89V (NCP1511) Vout 2.5, 2.85, 3.0 and 3.3V (NCP1512) Iout – 300 mA PWM mode, 30 mA Pulsed Mode uBump Packaging and 3x3mm QFN (Q4) 100% 90% VCC Q1 Vin L LX FB Vout Cin Low Iq Pulsed Cntrl PW M / PFM Cntrl Cout Q2 Pulse PWM 3.6 Vin 1.8 Vout 60% 50% 40% 30% 20% Control GNDP 80% 70% 10% 0% 0.01 GNDA Sync CB0 CB1 SDN 0.1 1 10 100 1000 Iout (mA) 118 www.onsemi.com System Layout Area 系统布局面积 Component 元件 NCP1500 NCP1501 NCP1510 Micro8 + MBR0520 (SOD-123) Micro8 CSP 3 x 5 + 1.8 x 3.8 3x5 1.5 x 1.5 Capacitors 电容 2 0805 10 uF 2 0805 10 uF 2 0805 10 uF Cap Area 电容面积 2 x (2.0 x 1.2) 2 x (2.0 x 1.2) 2 x (2.0 x 1.2) 600 kHz 1 MHz 1 MHz Sumida CDRH2D18/LD 15 uH Sumida CDRH2D18/LD 10 uH Sumida CDRH2D11 6.8 uH 3.2 x 3.2 x 2.0 3.2 x 3.2 x 2.0 3.2 x 3.2 x 1.2 30 mm2 17.3 mm2 50 mm2 28.8 mm2 IC IC Area IC面积 Frequency 频率 Inductor 电感 Inductor Area 电感面积 Total Area 36.9 mm2 总面积 Board Layout (60% Compression) 61.5 mm2 电路板面积(压缩60% ) Assume 4.2 Vin max, Vo = 1.8V, 300 mA Iout max All Dimensions in mm 假设最大4.2 Vin, Vo = 1.8V, 最大300 mA Iout 所有尺寸的单位是mm 119 www.onsemi.com Layout Comparison 布局比较 NCP1510 uBump 1.5x1.5mm NCP1501 Micro8 3x5mm 120 www.onsemi.com Efficiency Comparison 效率比较 NCP1501: PWM vs LDO Efficiency Comparison PWM与 LDO效率比较 100% 90% 80% 70% 1.57 V PWM 60% 1.8 V PWM 50% 1.57 V LDO 40% 1.8 V LDO 30% 20% 10% 0% 0.01 3.6 Vin 0.1 1 10 Iout (mA) NCP1510: PWM vs Pulse Efficiency PWM与脉冲效率比较 100.00% 90.00% 80.00% 70.00% 1.57 V Pulse 1.8 V Pulse 1.57 V PWM 1.8 V PWM 60.00% 50.00% 40.00% 30.00% 20.00% 10.00% 0.00% 0.01 0.1 1 10 Iout (mA) 121 100 1000 3.6 Vin www.onsemi.com NCP1530 600mA PWM/PFM Step-down DC-DC Converter with External Sync pin RTM Already • • • • • • • • Optimized for 2.5 to 3.3 Vout with Good Efficiency Up to 6.0 Vin (max) 600 mA out 600 kHz Internal Oscillator / 600 kHz to 1.2 MHz Sync Very Low Cost Solution Programmable Soft Start Ceramic Caps MSOP8 (3x4.9mm) 122 Applications Smart Phone Baseband Power Supply PDAs Digital Cameras Handheld Games Portable Audio www.onsemi.com NCP1530 600mA PWM/PFM Step-down DC-DC Converter with External Sync pin Description The NCP1530 is a PWM/PFM step-down (buck) DC-DC converter up to 600mA load. It can operate in PWM mode or PFM mode in which the IC automatically switches to PFM mode at light loads for higher efficiency. The internal oscillator frequency is 600kHz and it can be synchronized to external clock between 600kHz and 1200kHz. It is available in space-saving Micro8TM package. Features Benefits 92% Efficiency at Iout=500mA, Vout =3.3V, Vin=4.0V Low Operating Current of 48uA (no load) Low Shutdown Current of 0.1uA Automatic PWM/PFM mode for current saving Synchronizable to external clock up to 1200kHz Switching Frequency of 600kHz Micro8TM package Vin from 2V to 5.5V Applications Smart Phone Baseband Power Supply PDAs Digital Cameras Handheld Games Portable Audio High efficiency --> Extends Battery Life Extends Standby operation Optimizes system efficiency Reduces EMI in the system Allows small size inductor --> Saves Board Space Saves Board Space Suitable for a wide range of voltage sources Ordering Information Micro8TM 4000 Units T&R will offer 2.5, 2.7, 3.0, 3.3V fixed output voltages More Information Online: www.onsemi.com/ncp1530 123 www.onsemi.com NCP1530: Competition Analysis Part No. Manufacturer Output Voltage Range NCP1530 ON 2.5V, 2.7V, 3.0V, 3.3V Fixed by Laser Trim LTC1701 Linear Tech 1.25V to 5V External Adjustable +/- 1.5% +/-2% on top of external resistors tolerance 2.5V to 5.5V 600 kHz Yes, upto 1.2MHz +/- 2.4% on top of external resistors tolerance 2.5V to 5.5V 1 MHz No Inductor Needed Support Ceramic Capacitors Efficiency at Light Load VOUT = 3.3V, V IN = 5V, I OUT = 50mA 5.6uH Yes 85% Typ. Efficiency at High Load VOUT = 3.3V, V IN = 5V, I OUT = 500mA Output Ripple Voltage VOUT = 3.3V, V IN = 5V, I OUT = 50mA Max. Output Current VOUT = 3.3V, VIN = 5V Operating Current at Room Temp. VOUT = 3.3V, VIN = 5V Shutdown Curent at Room Temp. VOUT = 3.3V, VIN = 5V Maximum Duty Cycle Internal Sync. Rect Operation PFET RDS(ON) at Room Temp VOUT = 3.3V, VIN = 5V NFET RDS(ON) at Room Temp. VOUT = 3.3V, VIN = 5V Control Scheme Additional Features Output Voltage Accuracy Input Voltage Range Max. Switching Frequency External Syn. Capability Package XC6377 Torex 1.5V to 6V Fixed 0.1V Step and External adjustable version +/-2.5% TC120 Microchip 3.0V, 3.3V, 5.0V Fixed 2.65V to 10V 550kHz Yes, 400kHz to 700kHz 1.8V to 10V 300kHz No 1.8V to 10V 300kHz No 4.7uH Yes 88% Typ. 10uH ? 94% Typ. 22uH No 88% Typ. 22uF No ? 90% Typ. 89% Typ. 87% Typ. 84% Typ. ? 10mVp-p ? ? ? ? 600mA 600mA 600mA 500mA 600mA 50uA Typ. 135uA 230uA 52uA Typ. 55uA Typ. 0.1uA Typ. < 1.0uA < 1.0uA 1.5uA Typ. 1.5uA Typ. 100% No 0.3 Ohm Typ. 100% No 0.3 Ohm Typ. 100% Yes 0.65 Ohm Typ. 100% No 0.69 Ohm Typ. 100% No 0.64 Ohm Typ. N.A. N.A. 0.75 Ohm Typ. N.A. N.A. PWM/PFM Enable PWM/Burst Mode Enable PWM/Burst/Pulse Skip Enable Micro8 SOT23-5 MSOP-8 PWM/PFM Enable, UVLO, external Drive SOP8 PWM/PFM Shutdown, UVLO, external Drive SOP8 124 LTC1877/8 Linear Tech 0.8V to V IN External Adjustable +/-2.5% www.onsemi.com DC-DC Buck Converter Application Example Low Noise Amplifier RF input 900Mhz Modulated 0-100Khz Modulation 900Mhz pure wave RF Mixer Digital Base band Audio Amplifier Frequency Synthesizer Low Noise LDO 2.8V@40mA Battery 3.6V Main Power Supply Low Noise LDO 2.8V@80mA Low Iq LDO 2.8V@150mA DC/DC Buck Converter High PSRR LDO 1.5V, 300mA 2.8V@300mA for DSP,MCU DC-DC has a much higher efficiency than LDO when the difference between Vout and Vin is large. 125 www.onsemi.com DC-DC Boost Converters (Step-up Converters) Key Features High efficiency, True-Cutoff, Several of the devices include low battery detector Complete portfolio that covers a majority of the needs in portable electronics Input Output Typ Device Topology Frequency Voltage Voltage Max Current Efficiency NCP1403 PFM 300KHz 1.2-5.5V up to 15V 50mA 82% NCP1406 PFM 600KHz 1.2-5.5V up to 25V 50mA@Vo=15V 85% Package SOT23-5 Features Enable pin Status A SOT23-5 Enable pin S (RTM Jun 04) 25mA@Vo=25V NCP1400 NCP1402 NCP1423 PWM PFM PFM 180KHz 180KHz 800KHz 0.8-5.5V 0.8-5.5V 0.8-5.0V 1.8-5.0V 1.8-5.0V 1.5-5.0V 100mA 200mA 200mA 88% 85% 95% NCP1410 PFM 600KHz 1.0-5.5V 1.5-5.5V 250mA 92% NCP1411 PFM 600KHz 1.0-5.5V 1.5-5.5V 250mA 92% NCP1421 PFM 1.2MHz 1.0-5.0V 1.5-5.0V 600mA 94% NCP1422 PFM 1.2MHz 1.0-5.0V 1.5-5.0V 800mA 94% NCP1450 PWM 180KHz 0.8-5.5V 1.8-5.0V 1000mA (ext switch) 88% SOT23-5 Enable pin SOT23-5 Enable pin Micro8 Sync-rect, Low-batterydetect, Auto-discharge Micro8 Sync-rect, Low-Battery Detection Micro8 Sync-rect, Low-Battery Detection, Ring-Killer Micro8 Sync-rect, True-cutoff, Low-battery-detect QFN Dual- Sync-rect, True-cutoff, sided Low-battery-detect SOT23-5 Enable pin OLED Driver A A S (RTM Sep 04) A A A Flash Light LED Driver A Flash Light LED Driver A A = active, S = Sampling, D = under development RTM = release to market Typical Applications Cell Phone, DSC, PDA, GPS, Wireless Optical Mouse, Portable Audio, Handheld Game, LCD and OLED Battery operated devices - especially those driven by 2-cell alkaline/NiMH battery 126 www.onsemi.com NCP1410 250mA Sync-Rect PFM Step-up DC-DC Converter with Low-BatteryDetector Eval Board available Description Applications It integrates a Sync-Rect PFM Step-Up DC-DC Converter and a Low-Battery-Detector in a Micro-8 package. It is specially designed for battery operated hand-held electronic products up to 250mA loading. Personal Digital Assistant (PDA) Digital Camera Hand-held Instrument Conversion from One or Two NiMH or NiCd, or One Li-ion Cell to 3.3V/5.0V Features Benefits High Efficiency 92% Typical Very Low Quiescent Current of 9uA Typical Built-in Synchronous Rectifier (PFET) High Switching Frequency Up To 600KHz Integrated Low-Battery-Detector Micro-8 package High Efficiency and Low Quiescent Current Extend Battery Life. Built-in Synchronous Rectifier (PFET) Eliminates One External Schottky Diode High Switching Frequency Allows Small Size Inductor Integrated Low-Battery-Detector Simplifies System Design 1V startup Output Voltage from 1.5V to 6.0V Additional Information Ordering Information See www.onsemi.com/NCP1410 – Datasheet, case outline http://www.onsemi.com/pub/Collateral/NCP1410-D.PDF NCP1410DMR2 Micro-8 4000 per reel 127 www.onsemi.com NCP1411 250mA Sync-Rect PFM Step-up DC-DC Converter with Low-BatteryDetector and Ring-Killer Description It integrates a Sync-Rect PFM Step-Up DC-DC Converter and a Low-Battery-Detector in a Micro-8 package. In addition, it incorporates an innovative Ring-Killer circuitry which guarantees quiet operation in discontinuous conduction mode. It is specially designed for battery operated hand-held electronic products up to 250mA loading. Features Innovative Ring-Killer guarantees quiet operation High Efficiency 92% Typical Very Low Quiescent Current of 9uA Typical Built-in Synchronous Rectifier (PFET) High Switching Frequency Up To 600KHz Integrated Low-Battery-Detector 1V startup Output Voltage from 1.5V to 6.0V Ordering Information NCP1411DMR2 Micro-8 4000 per reel Applications Eval Board available Personal Digital Assistant (PDA) Digital Camera Hand-held Instrument Conversion from One or Two NiMH or NiCd, or One Liion Cell to 3.3V/5.0V Benefits Quiet operation reduces electromagnetic interference Extend Battery Life Extend Battery Life Eliminates One External Schottky Diode Allows Small Size Inductor Simplifies System Design More Information Online: See www.onsemi.com/NCP1411 – Datasheet, case outline http://www.onsemi.com/pub/Collateral/NCP1411-D.PDF 128 www.onsemi.com NCP1411 250mA, Sync-Rect, PFM, Step-Up DC-DC Converter with Low-Battery Detector and Ring Killer Ring Killer Improves EMI in Discontinuous Conduction Mode Effect of Ring Killer Circuit NCP1411 Normal DC-DC The MAX1676 has a similar function but requires: • an additional external resistor • a larger 10-pin package 129 www.onsemi.com NCP1406 25V PFM Step-Up DC-DC Converter for OLED Bias • • • • • • • 25V low side switch, 1.2V Feedback Voltage Max output current: 50mA @ Vout=15V, 25mA @ Vout=25V 85% Efficiency at Vout = 25 V, Iout = 25 mA, Vin = 5.0V 85% Efficiency at Vout = 15 V, Iout = 50 mA, Vin = 5.0V Low Operating Current of 15 uA (Not Switching) Ceramic Capacitors PFM switching up to 1MHz L 4.7 mH D Applications • • • • • Cell Phone OLED Driver PDAs Digital Cameras Handheld Games Portable Audio MBRM130LT1 VIN VOUT 1.8 V to 5.5 V 25 V CE C1 10mF LX NCP 1 5 FB C2 4.7mF C3 5 pF to 150 pF 2 R1 Enable VDD GND 3 4 R2 C4 150pF 130 www.onsemi.com Charger Control Type ANALOG MOSFETS Device NCP1800 NTHD4102P NTHS4101P NTHS5441 NTMS2P102L NTGS3441 NTGS3443 Function Features Li Ion Battery Charger IC P-Ch, Trench MOSFET, 20V, Dual P-Ch, Trench MOSFET, 20V, Single P-Ch, Trench MOSFET, 20V, Single FETKy, P-CH MOSFET + SCHOTTKY P-Ch, MOSFET, 20V, Single P-Ch, MOSFET, 20V, Single Charger status output, programmable current regulation 100m-ohm @ -4.5V 40m-ohm @ -4.5V 60m-ohm @ -4.5V 90m-ohm @ -4.5V, 20V 135m-ohm @ -4.5V 100m-ohm @ -4.5V MSQA6V1W5 DF6A6.8FU DISCRETE COMPONENTS STANDARD LOGIC SMS05T1 MMQA5V6T1 MMQA33T1 MM3Z2V4T1MM3Z27T1 MMBZ5V6ALT1 MMBZ33VALT1 MBRM120ET1,-LT1 MBRM110ET1,-LT1 MBR0520,0530,0540 1PMT16A MBT35200MT1 MMBT6589T1 MBT589LT1 NSL35TT1,12TT1 Package Status Micro 8 ChipFET ChipFET ChipFET SO-8 TSOP-6 TSOP-6 NOW 1Q03 1Q03 NOW NOW NOW NOW Quad Zener Array SC-88,SOT-563 NOW ESD protection of data lines on SIM and bottom connector Quad Zener Array SC-88,SOT-563 NOW Quad Common Annode TVS Quad Zener Array 5.6-33 volts SC-74 SC-59, SOT-563 NOW NOW Zener Regulator 2.4 - 27 volts SOD-232 NOW Dual Common Anode TVS 5.6 - 33 volts SOT-23 NOW Reverse Battery Protection 20V, 1 Amp, Low VF,Low IR 10V, 1 Amp, Low VF,Low IR 20V, 30V, 40V, 0.5Amp,Low VF 16V,175Watt TVS 35V PNP BJT, Low VCE(sat) 30V PNP BJT, Low VCE(sat) 30V PNP BJT, Low VCE(sat) 35V,12V PNP BJT, Low VCE(sat) Powermite Powermite SOD-123 Powermite TSSOP TSSOP SOT-23 SC-75 SOT-353/SC-88A SOT-553/SOT-656 SOT-353/SC-88A SOT-553/SOT-656 SOT-353/SC-88A SOT-553/SOT-656 SOT-353/SC-88A SOT-553/SOT-656 NOW NOW NOW NOW NOW NOW NOW NOW NOW 1Q03 NOW 1Q03 NOW 1Q03 NOW 1Q03 Reverse Battery Protection Charger Control Protection Switch MC74HC1Gxx Control Logic High Speed, Low PD MC74VHC1Gxx Control Logic High Speed, Low PD MC74VHC1Gxx Bias Control, analog switch,Loop Filter switch Open Drain, Low PD MC74HC1G66, 1GT66 Analog Switch, Interface with with 1.5V uP Low R(on), Low PD 131 www.onsemi.com Charger Control : NCP1800 Single-Cell Li+ Battery Charge Controller NTHD4P02F NTHD3101F Micro8 Footprint: 3 x 4.9mm PIN CONNECTIONS Eval Board available 132 www.onsemi.com NCP1800 Single-Cell Li+ Battery Charge Controller Description The NCP1800 is a constant current, constant voltage (CCCV) lithium ion battery charge controller. The external sense resistor sets the full charging current and the termination current is 10% of the full charge current (0.1 C). The voltage is regulated at +1% during the final charge stage. There is virtually zero drain on the battery when the input power is removed. Features 4-phase charging algorithm Integrated voltage and programmable current regulation. Integrated cell conditioning for deeply discharged cell. Better than 1% voltage regulation. Lowest standby current (0.5uA) in the industry. Charger status output for LED or host processor interface. Blocking diode not required with PNP transistor. Integrated over-voltage protection. Micro8TM package. Ordering Information NCP1800DM41R2: Micro8TM 4000 Units T&R NCP1800DM42R2: Micro8TM 4000 Units T&R Benefits Provides good safety for Li+ battery charging Provides different charging options for different Li+ battery chemistries. Prolongs battery life by lightly charging it when it is deeply discharged. Enhances system safety. Maximizes battery capacity usage Easy interface to the host system. Reduces parts count. Enhances system safety. Saves space. Applications Portable Phones PDAs Handheld Equipment, Battery Operated Portable Devices 133 www.onsemi.com NCP1800 + NCP345 Application Adapter Optional (only needed if adapter output has high voltage transients, example powered from a car battery) Digital Base-band DSP, MCU & Memory OVIC NCP345 FET or PNP Reset Generator Internal Charger NCP1800 LDO (Digital) RF LDO (Digital) Sim Card Supply LDO LDO (RF) LDOs (RF) (RF) DC/DC Converter Battery Li-Ion SIM Card 134 www.onsemi.com NCP345/6 Over-voltage Protection NTGS3441T1 P-CH MOSFET PIN CONNECTIONS TSOP-5 SN SUFFIX (Top View) • NCP345 is optional (only needed if adapter output has high voltage transients, example powered from a car battery). 135 • • • • • CASE 483 First “Over-voltage Protection IC” in the industry that withstands voltage transients up to 30V. Fast over-voltage turn off time of less than 1 microsecond. Over-voltage threshold of 6.85V (nominal). Under-voltage lock out of 2.8V (nominal). CNTRL input compatible with 1.8V logic levels. Suitable for 1 cell Li-ion and 3/4 cell NiCD/NiMH applications. www.onsemi.com LDO Voltage Regulators (Low Drop Out) Functional Description These devices provide a regulated output voltage when a greater unregulated voltage is presented at the input. It provides an accurate, stable, clean and quiet voltage to a particular sub-system. The devices are often less expensive and efficiency alternatives to DC-DC converters. Device NCP4523 Max Iout Triple outputs 150,80,80mA Device Max Iout NCP502 80 mA MC78PC 150mA NCP562 80 mA NCP4561 80mA MC33761 MC33762 MC33765 MC33263 NCP512 80mA Dual outputs 80,80mA Five outputs 150 mA 80 mA NCP563 NCP561 MC78LC NCP552 NCP553 NCP551 80 mA 150 mA 80 mA 80 mA 80 mA 150 mA ON Advantage Broad portfolio to fit every application. Low current drains that are industry leading; 3 µA quiescent current Industry leading footprints; SC-70 Vin Pass Element Vout Error Amplifier Reference voltage Typical Applications Battery operated devices Cell phones and PDAs Portable electronics and instrumentation GND 136 www.onsemi.com LDO : Selection Guide(80~300mA) Device Vin Max Iout Iq PSRR Noise max typ(max) Very Low Noise (for Handset RF power supply) NCP4523 6V Triple outputs 70,70,70 µA 70dB 60µV 150,80,80mA MC78PC 9V 150mA 35 µA 70dB 30µV NCP4561 12V 80mA 180 µA 70dB 35µV MC33761 12V 80mA 180 µA 70dB 35µV MC33762 12V Dual outputs 180,180uA 70dB 35µV 80,80mA MC33765 12V Five outputs 470uA (total 60dB 25~40µ 30,40,50,60, device) V 150mA MC33263 12V 150 mA 170(200) µA 70dB 25µV Low Iq, High PSRR (for Handset Baseband power supply) NCP512 6V 80 mA 40(90) µA 50dB 180µV NCP500 6V 150 mA 195(300) µA 62dB 60µV NCP511 6V 150 mA 40(100) µA 50dB 110µV NCP502 12V 80 mA 40 µA 55dB 130µV Very Low Iq (for non-RF battery-powered products) NCP562 6V 80 mA 3 µA 25dB 65µV NCP563 6V 80 mA 3 µA 25dB 65µV NCP561 6V 150 mA 4(8) µA 20dB 60µV MC78LC 12V 80 mA 1(3) µA 25dB 90µV NCP552 12V 80 mA 3(6) µA 25dB 90µV NCP553 12V 80 mA 3(6) µA 25dB 90µV NCP551 12V 150 mA 4(8) µA 25dB 100µV 300mA, High PSRR LDO for Audio Amp Driver NCP2860 6V 300 mA 355(700) µA 60dB 60µV Dropout Enable Bypass cap Package Vout 220,160,160mV Y N SSOP8 2.8,3.0 200mV @100mA 140mV @60mA 140mV @60mA 140mV @60mA Y Y Y Y N N N N SOT23-5 SOT23-5 SOT23-5 Micro8 1.8,2.5,2.8,3.0,3.3,5.0 2.8 2.5,2.8,3.0,5.0 2.5,2.8,3.0 110mV @ 80% of max current load Y Y TSSOP16 2.8,3.0 137mV @100mA Y Y SOT23L-6 2.8,3.0,3.3,4.0,5.0 180mV @80mA 170mV @150 mA 100mV @100mA 400mV @40mA Y Y Y Y N N N N 240mV @80mA 240mV @80mA 140mV @150mA 30mV@1mA 680mV@80mA 680mV@80mA 40mV@10mA for 2.7-5.0V 130mV@10mA for 1.5-2.5V Y N Y N Y N Y N N N N N N N SC82-AB SC82-AB SOT23-5 SOT23-5 SC82-AB SC82-AB SOT23-5 150mV @300mA Y N Micro 8 137 SC70-5 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0 SOT23-5/QFN 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0 SOT23-5 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0 SC70-5 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0 1.5,1.8,2.5,2.7,2.8,3.0,3.3,5.0 2.77V (default), Other Vout can be adjusted by external resistors. www.onsemi.com Voltage Supervisors Functional Description Primarily monitor the voltage of a battery operated device and signal a microprocessor when the voltage goes from acceptable to unacceptable or vice versa. This allows the system to store sensitive memory or protect voltage sensitive ICs Device NCP300/301 NCP302/303 NCP304/305 NCP803 MAX809/810 MAX707/708 Package SOT23-5 SOT23-5 SC70 SOT23-3 SOT23-3 Micro8, SO8 Description Low current general purpose voltage supervisor series Low current voltage supervisor series with programmable delay Ultra-small (SC70) voltage supervisor 3-pin voltage supervisor Industry standard 3-pin voltage supervisor Industry standard voltage supervisor with master reset and power fail output ON Advantage Among the lowest current drain (quiescent current) values in the world! Smallest package offering with the NCP304/305 Typical Applications Battery operated devices Microprocessor driven systems 138 www.onsemi.com SUPERVISORY ICs: Part Descriptions NCP300/1 NCP302/3 NCP304/5 MAX809/810 NCP803 NA (MAX811/812) NA (MAX6335/6/7) NA (MAX824) MAX707/708 NA (MAX6342/3/4) Voltage detectors Under Voltage Sensing Under Voltage Sensing Reset Time-out Counter Under Voltage Sensing Reset Time-out Counter Manual Reset Under Voltage Sensing Reset Time-out Counter WDI circuit & WD Time-out Counter Under Voltage Sensing Reset Time-out Counter Power Fail Comparator Reset generators µP Supervisors Manual Reset µP Supervisors+ NA (MAX823) NA (MAX703/704) NA (MAX705/706) Under Voltage Sensing Reset Time-out Counter WDI circuit & WD Time-out Counter Manual Reset Under Voltage Sensing Reset Time-out Counter Power Fail Comparator Battery SwitchOver Circuit Manual Reset Under Voltage Sensing Reset Time-out Counter WDI circuit & WD Time-out Counter Power Fail Comparator Manual Reset Green color: ON portfolio Blue color: Industry standard 139 www.onsemi.com Power Management Block Library DC-DC Blocks • • • • • • • PWM PFM Charge pumps Step Up Step Down Step Up/Down 10 mA to 250+ mA Battery Charging • CCCV Battery Charger • Pulse Battery Charger • 1 Li-ion and/or 3 NiMH • • • • Application Specific LDOs Fixed Programmable 10 mA to 300 mA High PSRR for RF SIM Interface Level Shift / Sequencing • • • • • • • • • • Audio Blocks Stereo Headphone Amp Class-D Spkr Amplifier Microphone Amplifier Bridge Speaker Amp 135 mW- 2.5 W Drive down to 8W Anti-Pop Noise Circuitry Digital Volume Control Headset Detection Headphone Amplifier (No coupling capacitors) Interface I 2C / S P I / U S B Internal Blocks • Digital IO Subset • Analog IO • ESD Clamp • Band-gap Ref • Thermal Shutdown • RC Oscillator 1 MHz AD converter 10bit+sign ; 1MHz Supervisory • Voltage Detection • Power On Reset • Power Up/Down Sequencing 16 Bit Sigma-Delta Audio ADC Converter Real Time Clock + Back-up Battery monitoring Temperature Sensor DA converter for accessories RF PA Control GSM / Edge Dynamic Voltage Management Analog Switches Auto Gain Control for Audio Crystal Buffer 32KHz 140 Battery Identifier Audio DAC Converter Driver Blocks • LEDs (color or white) • Vibrator / Buzzers Touch Screen Interface X:Y stylus input Touch detect Touch pressure Crystal Buffer 19.2MHz AVAILABLE DEVELOPMENT www.onsemi.com Power Management ASICs (PMUs or PM ICs) (Complete Power Management SoC) Functional Description These are full solutions for the markets they target. Target DC DC Device App LDOs Buck NCP4115 Cellular 7 up/down Touch Battery LED Vibrator Buzzer Screen Audio Charger Driver Driver Ringer SPI Y 1 Y I2C A/D Reset Y USB buffer Y Status S S = sampling (schedule for mass production from April 2003) ON Advantage Design blocks that fulfill touch screen stylus driven applications Audio block that services a stereo earpiece, loudspeaker, and microphone all at once Comprehensive system solutions to bring part count, board space, and cost down Solutions for PDA and cellular; these may also be applicable to other handheld electronic requirements Typical Applications PDA, Cell phone, GPS, Handheld electronics Battery operated devices 141 www.onsemi.com NCP4115 Power Management IC for CDMA phone Description This 64 pin BGA device acts as the power management IC for cellular phone. Its functional blocks include: • Li Ion CCCV Battery Charger. • 7 Low Noise LDOs with output voltages ranging from 1.8 to 3.0 V: 1 x 175 mA, 2 x 150 mA, 1 x 75 mA, 3 x 50 mA. • 2 General Purpose LDOs for Vibration Motor and LEDs. • 19.2 MHz inverter (clock slicer): 500 mV p-p to LDO4 voltage. • DC/DC step up/down converter: 1.5 to 5 V and 100 mA max • Supervisory Reset Block with delay, active Low. • UVLO. • USB Buffer Circuit. • Bandgap Reference. • I2C Interface. • Zener zapping for accurate references and oscillator frequency. • Thermal Shutdown with hysteresis. • 2 comparators. • Battery recognition function • Package: 7 x 7 mm, 64 pin BGA 142 www.onsemi.com Thank You Q&A Please select ON semiconductor as your value supplier. Author Name 11-Apr-02 143 www.onsemi.com