CompSci 891M- 22nd September, Fall’15
Memristors for computing & Future Non-Volatile
Memory ApplicationBeyond transistors and silicon technology
Somnath Chakraborty, Dept. Of ECE, UMASS
The Ionic and Electronic Device and Materials (IEDM) Group
ECE
1.
2.
3.
4.
Present Silicon Technology.
What is “Memristor” !
Device operation principle/ Physics behind Resistance switching mechanism.
Promising future/ application (NvMe, Analog Computing, Digital Computing
etc.).
5. Why should we care?
6. Some funny/unconventional materials as Memristors.
Electrical and Computer Engineering
Well Played Silicon, Well Played !
Well already know this, still a fun slide to present!
Unfortunately life is not so much fun. Fundamental limits
are close with present 14nm,10nm technology and it gets
more and more difficult with diminishing return as we go
smaller. So? What's next?
Electrical and Computer Engineering
Memristors to the rescue!!!
“The Memristor was a term coined in 1971 by circuit theorist Leon Chua as a
missing non-linear passive two-terminal electrical component relating electric
charge and magnetic flux linkage.”- Wikipedia
BENEFITS:
• High Density
• Fast
• Ultra high Endurance
• Non Volatile
• 3D stackable
Metal 1
insulator
Metal 1
insulator
Metal 2
Metal 2
Electrical and Computer Engineering
V
-Memristive switching mechanism for metal/oxide/metal Nanodevices- J. JOSHUA YANG, MATTHEW D. PICKETT,
XUEMA LI, DOUGLAS A. A. OHLBERG,DUNCAN R. STEWART* AND R. STANLEY WILLIAMS
Electrical and Computer Engineering
A basic Memristor with One Top Electrode(Vertical) and One
Bottom Electrode(Horizontal).
The cross point defines the device.
Electrical and Computer Engineering
Switching in Metal/TaOx/Ta/Metal Devices-
Pt
TaOx
Ta
Pt
Change in Resistance - ~10^2 to 10^4
Electrical and Computer Engineering
Memristor
PCM
STTRAM
SRAM
DRAM
Flash
(NAND)
HDD
<4
4-16
20 - 60
140
6-12
1-4*
2/3
0.1–3
2-25
0.1-2.5
0.0005
0.005
0.00002
1–10x10 9
Read time (ns)
<10
10-50
10-35
0.1-0.3
10
100000
5–8x10 6
Write time (ns)
~10
50-500
10-90
0.1-0.3
10
100000
5–8x10 6
Reciprocal density (F2 )
Energy per bit (pJ)
Retention
years
Endurance (cycles)
10 12
years
years
as long as
voltage
applied
10 9
10 15
>10 16
prototype and …
<< second
years
years
>10 16
10 4
10 4
… commercialized technologies
J. Joshua Yang et al., Nature Nanotechnology 8, 13 (2013)
Electrical and Computer Engineering
Intel and Micron already announced their
collaboration in making these memory modules
to hit store in 2016!
-Courtesy:
Intel
Electrical and Computer Engineering
Outlook: Roadmap
W.G. Kim et al., SK-hynix
J. Joshua Yang et al., HP Labs
VLSI Technology Symposium
(2014) 138-139
DRAM
Flash
RAM
Flash
Hard Disk
Solid State Disk
Optical disk
Floppy Disk
Chip
development
Storage Class
Memory
Universal
Memory
Analog and Neural
Computing
Time
Electrical and Computer Engineering
Q & A?
Thank You!
Electrical and Computer Engineering