LAN-TC-01 Edisi ke 2 : Tatacara Kelulusan Bagi Kursus Pengajian Institusi Pendidikan Tinggi Swasta (IPTS) Bagi Peringkat Sijil, Diploma dan Ijazah Sarjana Muda. ___________________________________________________________________________________ 1. Title of Subject Advanced MOS Devices 2. Subject Code EEN4126 3. Status of Subject Elective 4. Stage Degree 5. Version Date of Previous Version : May 2000 Date of Current Version : December 2004 6. Credit Hour 3 EAC’s Credit Hours Equivalent 3.32 (3 + 0.32) 3 represents lectures (3 hours per week 14 weeks) 0.32 represents assignment, tutorials or labs (3 hours of assignments/tutorials, 6 hours of labs) 7. Pre-Requisite EEN3076: Power Electronics 8. Teaching Staff Dr. Yow Ho Kwong, Ph.D. Dr. Ong Duu Sheng, Ph.D. Tutor Liaw Kok Keong, B.Eng. (Hons Electronics) 9. Semester Epsilon Year, Trimester 3 10. Aim of Subject To provide the student with a rigorous introduction to the theory of MOS devices 1 Borang ini diisi berasaskan buku “Garis Panduan Prosedur Dan Proses Mendapatkan Kelulusan, Standard Minimum Dan Perakuan Akreditasi Kursus Pengajian IPTS”, buku “Garis Panduan Standard Dan Kriteria Kursus Pengajian IPTS” dan buku “Bimbingan Menyediakan Dokumen Memohon Kelulusan Dan Perakuan Akreditasi Kursus Pengajian IPTS” LAN-TC-01 Edisi ke 2 : Tatacara Kelulusan Bagi Kursus Pengajian Institusi Pendidikan Tinggi Swasta (IPTS) Bagi Peringkat Sijil, Diploma dan Ijazah Sarjana Muda. ___________________________________________________________________________________ 11. Learning Outcome of Subject At the completion of the subject, students should be able to : Comprehend the theory and operational knowledge of CMOS as dominant semiconductor technology Understand the current technological design in MOSFET Learn the strength and weaknesses of CMOS and CCD, in theory and application. Practical experience, through laboratory experiment, in characterizing MOSFET Programme Outcomes 12. Assessment Scheme % of contribution Ability to acquire and apply fundamental principles of science and engineering. 50 Capability to communicate effectively. 10 Acquisition of technical competence in specialised areas of engineering discipline. 15 Ability to identify, formulate and model problems and find engineering solutions based on a systems approach. 10 Understanding of the importance of sustainability and cost-effectiveness in design and development of engineering solutions. 5 Ability to work independently as well as with others in a team. 10 Lab Experiments Work in group of 2 Lab report writing Oral assessment at the end of lab 10% Tutorial / Assignment Group assignment Focus group discussion at tutorial To enhance understanding of basic concepts in lecture 10% Test Quiz Written exam 20% Final Exam Written exam 60% 2 Borang ini diisi berasaskan buku “Garis Panduan Prosedur Dan Proses Mendapatkan Kelulusan, Standard Minimum Dan Perakuan Akreditasi Kursus Pengajian IPTS”, buku “Garis Panduan Standard Dan Kriteria Kursus Pengajian IPTS” dan buku “Bimbingan Menyediakan Dokumen Memohon Kelulusan Dan Perakuan Akreditasi Kursus Pengajian IPTS” LAN-TC-01 Edisi ke 2 : Tatacara Kelulusan Bagi Kursus Pengajian Institusi Pendidikan Tinggi Swasta (IPTS) Bagi Peringkat Sijil, Diploma dan Ijazah Sarjana Muda. ___________________________________________________________________________________ 13. Details of Subject Topics MOS Systems The MOS capacitor, Energy Band diagrams, Effect of GateSubstrate Voltage on Surface Condition: Flat Band, Accumulation, Depletion and Strong Inversion, Approximate Analysis: The DeltaDepletion Solution. Non-idealities in MOS Capacitor: Work Function Differences, Oxide Fixed Charge, Interface Trapped Charge, Mobile Ionic Charge, Flat-Band Voltage, Deep-depletion Condition, Exact Theory of the MOS Capacitor, Interpretation and Analysis of MOS Capacitor-Voltage Curves. Charge-Coupled Devices Introduction, Charge-transfer device structure, Storage of Charge, Transfer of Charge, Surface potential, Vertical and Lateral Charge Confinement, Charge input and output, Multiphase Structures: Four-phase CCD and Two-phase CCD. Relaxation of the MOS Capacitor in Deep Depletion: Shockley-Read-Hall Statistics, Interface States, Optical Generation, Capacitance During the Relaxation from Deep Depletion to Inversion, Charge Transfer Efficiency, Bulk Channel CCD, Applications of Charge-coupled Devices. The MOSFET MOSFET Operation, Substrate Bias, Quantitative Analytical Relations: Square-Law Model and Bulk Charge Model, Mobility Variation, Threshold Voltage Control, Channel Length Modulation, Sub-threshold Conduction, Small-Signal Capacitances, Figure of Merit for Analog Application, CMOS, Digital Switching Performance, The Symmetric and Optimized Inverter. Characteristics of Scaled MOSFETs, Hot Carrier Injection, Velocity Saturation, Short- and Narrow-channel Effects, and Snapback Breakdown. Modern FET Structures Advanced MOSFET Design, LDD Transistors, DMOS, BuriedChannel MOSFET, SiGe Devices, MODFET. Hours 10 15 12 5 3 Borang ini diisi berasaskan buku “Garis Panduan Prosedur Dan Proses Mendapatkan Kelulusan, Standard Minimum Dan Perakuan Akreditasi Kursus Pengajian IPTS”, buku “Garis Panduan Standard Dan Kriteria Kursus Pengajian IPTS” dan buku “Bimbingan Menyediakan Dokumen Memohon Kelulusan Dan Perakuan Akreditasi Kursus Pengajian IPTS” LAN-TC-01 Edisi ke 2 : Tatacara Kelulusan Bagi Kursus Pengajian Institusi Pendidikan Tinggi Swasta (IPTS) Bagi Peringkat Sijil, Diploma dan Ijazah Sarjana Muda. ___________________________________________________________________________________ 14. Teaching and Learning Activities This subject will be delivered using the following means: Lecture Hours = 42 hours Supervised Tutorial Hours = 3 hours Laboratory Experiments = 6 hours Total Contact Hours = 51 15. Laboratory 1. MOS Capacitor 2. MOSFET 16. Reading Materials Textbook 1. David W. Greve, "Field Effect Devices and Applications", Prentice Hall, 1998. Reference Materials 1. Dieter K. Schroder, "Advanced MOS Devices", Addison-2. Wesley,1990. Clifton G. Fonstad, "Microelectronic Devices and Circuits", McGraw-Hill, Inc.,1994. J.J. Liou, A.Ortiz-Conde & K.Garcia-Sanchez, "Analysis and Design of MOSFETs", Kluwer Academic Publishers, 1998. R.F.Pierret, "Semiconductor Device Fundamentals", Addison-Wesley, 1996. E.H. Nocollian & J.R. Brews, "MOS (Metal Oxide Semiconductor) Physics and Technology", John Wiley & Sons, 1982. 2. 3. 4. 5. 4 Borang ini diisi berasaskan buku “Garis Panduan Prosedur Dan Proses Mendapatkan Kelulusan, Standard Minimum Dan Perakuan Akreditasi Kursus Pengajian IPTS”, buku “Garis Panduan Standard Dan Kriteria Kursus Pengajian IPTS” dan buku “Bimbingan Menyediakan Dokumen Memohon Kelulusan Dan Perakuan Akreditasi Kursus Pengajian IPTS”