LAN-TC-01 Edisi ke 2 : Tatacara Kelulusan Bagi Kursus Pengajian Institusi Pendidikan Tinggi Swasta
(IPTS) Bagi Peringkat Sijil, Diploma dan Ijazah Sarjana Muda.
___________________________________________________________________________________
1. Title of Subject
Advanced MOS Devices
2. Subject Code
EEN4126
3. Status of Subject
Elective
4. Stage
Degree
5. Version
Date of Previous Version : May 2000
Date of Current Version : December 2004
6. Credit Hour
3
EAC’s Credit Hours
Equivalent
3.32 (3 + 0.32)
3 represents lectures (3 hours per week  14 weeks)
0.32 represents assignment, tutorials or labs (3 hours of assignments/tutorials, 6
hours of labs)
7. Pre-Requisite
EEN3076: Power Electronics
8. Teaching Staff
Dr. Yow Ho Kwong, Ph.D.
Dr. Ong Duu Sheng, Ph.D.
Tutor
Liaw Kok Keong, B.Eng. (Hons Electronics)
9. Semester
Epsilon Year, Trimester 3
10. Aim of Subject
To provide the student with a rigorous introduction to the theory of MOS
devices
1
Borang ini diisi berasaskan buku “Garis Panduan Prosedur Dan Proses Mendapatkan Kelulusan, Standard Minimum Dan
Perakuan Akreditasi Kursus Pengajian IPTS”, buku “Garis Panduan Standard Dan Kriteria Kursus Pengajian IPTS” dan
buku “Bimbingan Menyediakan Dokumen Memohon Kelulusan Dan Perakuan Akreditasi Kursus Pengajian IPTS”
LAN-TC-01 Edisi ke 2 : Tatacara Kelulusan Bagi Kursus Pengajian Institusi Pendidikan Tinggi Swasta
(IPTS) Bagi Peringkat Sijil, Diploma dan Ijazah Sarjana Muda.
___________________________________________________________________________________
11. Learning Outcome
of Subject
At the completion of the subject, students should be able to :
 Comprehend the theory and operational knowledge of CMOS as dominant
semiconductor technology
 Understand the current technological design in MOSFET
 Learn the strength and weaknesses of CMOS and CCD, in theory and
application.
 Practical experience, through laboratory experiment, in characterizing
MOSFET
Programme Outcomes

12. Assessment Scheme
% of contribution
Ability to acquire and apply
fundamental principles of science and
engineering.
50

Capability to communicate effectively.
10

Acquisition of technical competence in
specialised areas of engineering
discipline.
15

Ability to identify, formulate and model
problems and find engineering solutions
based on a systems approach.
10

Understanding of the importance of
sustainability and cost-effectiveness in
design and development of engineering
solutions.
5

Ability to work independently as well as
with others in a team.
10
Lab
Experiments



Work in group of 2
Lab report writing
Oral assessment at the end of lab
10%
Tutorial /
Assignment



Group assignment
Focus group discussion at tutorial
To enhance understanding of basic
concepts in lecture
10%
Test Quiz

Written exam
20%
Final Exam

Written exam
60%
2
Borang ini diisi berasaskan buku “Garis Panduan Prosedur Dan Proses Mendapatkan Kelulusan, Standard Minimum Dan
Perakuan Akreditasi Kursus Pengajian IPTS”, buku “Garis Panduan Standard Dan Kriteria Kursus Pengajian IPTS” dan
buku “Bimbingan Menyediakan Dokumen Memohon Kelulusan Dan Perakuan Akreditasi Kursus Pengajian IPTS”
LAN-TC-01 Edisi ke 2 : Tatacara Kelulusan Bagi Kursus Pengajian Institusi Pendidikan Tinggi Swasta
(IPTS) Bagi Peringkat Sijil, Diploma dan Ijazah Sarjana Muda.
___________________________________________________________________________________
13. Details of Subject
Topics
MOS Systems
The MOS capacitor, Energy Band diagrams, Effect of GateSubstrate Voltage on Surface Condition: Flat Band, Accumulation,
Depletion and Strong Inversion, Approximate Analysis: The DeltaDepletion Solution. Non-idealities in MOS Capacitor: Work
Function Differences, Oxide Fixed Charge, Interface Trapped
Charge, Mobile Ionic Charge, Flat-Band Voltage, Deep-depletion
Condition, Exact Theory of the MOS Capacitor, Interpretation and
Analysis of MOS Capacitor-Voltage Curves.
Charge-Coupled Devices
Introduction, Charge-transfer device structure, Storage of Charge,
Transfer of Charge, Surface potential, Vertical and Lateral Charge
Confinement, Charge input and output, Multiphase Structures:
Four-phase CCD and Two-phase CCD. Relaxation of the MOS
Capacitor in Deep Depletion: Shockley-Read-Hall Statistics,
Interface States, Optical Generation, Capacitance During the
Relaxation from Deep Depletion to Inversion, Charge Transfer
Efficiency, Bulk Channel CCD, Applications of Charge-coupled
Devices.
The MOSFET
MOSFET Operation, Substrate Bias, Quantitative Analytical
Relations: Square-Law Model and Bulk Charge Model, Mobility
Variation, Threshold Voltage Control, Channel Length Modulation,
Sub-threshold Conduction, Small-Signal Capacitances, Figure of
Merit for Analog Application, CMOS, Digital Switching
Performance, The Symmetric and Optimized Inverter.
Characteristics of Scaled MOSFETs, Hot Carrier Injection,
Velocity Saturation, Short- and Narrow-channel Effects, and
Snapback Breakdown.
Modern FET Structures
Advanced MOSFET Design, LDD Transistors, DMOS, BuriedChannel MOSFET, SiGe Devices, MODFET.
Hours
10
15
12
5
3
Borang ini diisi berasaskan buku “Garis Panduan Prosedur Dan Proses Mendapatkan Kelulusan, Standard Minimum Dan
Perakuan Akreditasi Kursus Pengajian IPTS”, buku “Garis Panduan Standard Dan Kriteria Kursus Pengajian IPTS” dan
buku “Bimbingan Menyediakan Dokumen Memohon Kelulusan Dan Perakuan Akreditasi Kursus Pengajian IPTS”
LAN-TC-01 Edisi ke 2 : Tatacara Kelulusan Bagi Kursus Pengajian Institusi Pendidikan Tinggi Swasta
(IPTS) Bagi Peringkat Sijil, Diploma dan Ijazah Sarjana Muda.
___________________________________________________________________________________
14. Teaching and
Learning Activities
This subject will be delivered using the following means:
 Lecture Hours = 42 hours
 Supervised Tutorial Hours = 3 hours
 Laboratory Experiments = 6 hours
Total Contact Hours = 51
15. Laboratory
1. MOS Capacitor
2. MOSFET
16. Reading Materials
Textbook
1.
David W. Greve, "Field Effect Devices and
Applications", Prentice Hall, 1998.
Reference
Materials
1.
Dieter K. Schroder, "Advanced MOS Devices",
Addison-2. Wesley,1990.
Clifton G. Fonstad, "Microelectronic Devices and
Circuits", McGraw-Hill, Inc.,1994.
J.J. Liou, A.Ortiz-Conde & K.Garcia-Sanchez,
"Analysis and Design of MOSFETs", Kluwer
Academic Publishers, 1998.
R.F.Pierret, "Semiconductor Device
Fundamentals", Addison-Wesley, 1996.
E.H. Nocollian & J.R. Brews, "MOS (Metal
Oxide Semiconductor) Physics and Technology",
John Wiley & Sons, 1982.
2.
3.
4.
5.
4
Borang ini diisi berasaskan buku “Garis Panduan Prosedur Dan Proses Mendapatkan Kelulusan, Standard Minimum Dan
Perakuan Akreditasi Kursus Pengajian IPTS”, buku “Garis Panduan Standard Dan Kriteria Kursus Pengajian IPTS” dan
buku “Bimbingan Menyediakan Dokumen Memohon Kelulusan Dan Perakuan Akreditasi Kursus Pengajian IPTS”