Background Statement for SEMI Draft Document 5472
REVISION OF SEMI E43-1108,
RECOMMENDED PRACTICE FOR ELECTROSTATIC MEASUREMENTS
ON OBJECTS AND SURFACES with title change to: GUIDE FOR
ELECTROSTATIC MEASUREMENTS ON OBJECTS AND SURFACES
NOTICE: A copy of the Document with revision markups showing the intended changes is also
provided as an aid to the voter in addition to the expected final version. Additions are indicated
by underline and deletions are indicated by strikethrough.
Notice: This background statement is not part of the balloted item. It is provided solely to assist the recipient in
reaching an informed decision based on the rationale of the activity that preceded the creation of this Document.
Notice: Recipients of this Document are invited to submit, with their comments, notification of any relevant
patented technology or copyrighted items of which they are aware and to provide supporting documentation. In this
context, “patented technology” is defined as technology for which a patent has issued or has been applied for. In the
latter case, only publicly available information on the contents of the patent application is to be provided.
Background Statement
Among users and manufacturers of semiconductor production equipment, the effects of electrostatic surface charge
are well known. Electrostatic discharge (ESD) damages both products and reticles. ESD events also result in
unwanted electromagnetic interference (EMI), causing equipment to malfunction. Charged materials coming into
contact with electrostatic sensitive equipment cause unplanned aborts, misprocessing, and other types of unwanted
performance. Charged wafer and reticle surfaces attract particles (electrostatic attraction or ESA) and increase the
defect rate.
SEMI Standard E43-1108 - “Guide for Electrostatic Measurements on Objects and Surfaces", describes static charge
measurement methods using a Coulomb meter, electrostatic fieldmeter, and electrostatic voltmeter. Measuring static
charge levels is often the first step in the static charge control process. E43 is due for its 5-year review in 2013.
SEMI has issued new versions of SEMI E78 (in September 2012), “Guide to Assess and Control Electrostatic
Discharge (ESD) and Electrostatic Attraction (ESA) for Equipment” and SEMI E129 (in September 2012), “Guide
to Assess and Control Electrostatic Charge in a Semiconductor Manufacturing Facility” to assist in mitigating the
effects of static charge in semiconductor equipment. Implementing both Standards involves using a number of
standard industry test methods, including the Coulomb meter (with or without the Faraday cage), electrostatic
fieldmeter, electrostatic voltmeter, EMI detectors, and ESD simulators. Testing using the high-impedance contacting
digital voltmeter (HIDVM) was added to the latest versions of these Documents.
Document 5472 has been written to achieve two purposes:
1) Review, update, and reissue the information contained in E43-1108. Bring the Document into compliance
with the latest revision of the SEMI Standards Style Manual.
2) Add information concerning the uses of the HIDVM to make direct measurements of electrostatic voltages
on IC pins that might result in ESD damage. This is done to support the SEMI E78 and E129 Documents.
Test methods and calibration methods for using the HIDVM are described. With increasing interest in
solving static charge problems in semiconductor manufacturing, this additional measurement method needs
to be well defined and described.
Finally, a change to the title is being balloted to correct the Subtype of Standard.
Review and Adjudication Information
Group:
Date:
Time & Time zone:
Location:
City,
State/Country:
Leader(s):
Standards Staff:
Task Force Review
ESD/ESC Task Force
Tuesday, April 2, 2013
15:00-17:00 PDT
SEMI Headquarters
San Jose, California/USA
Global Technical Committee Adjudication
NA Metrics TC Chapter
Wednesday, April 3, 2013
15:00-18:00 PDT
SEMI Headquarters
San Jose, California/USA
Arnold Steinman
(arnie0305@gmail.com)
David Bouldin (david.bouldin@sbcglobal.net)
Mark Frankfurth
(Mark_Frankfurth@cymer.com)
Michael Tran (SEMI NA)
408.943.7019
mtran@semi.org
Michael Tran (SEMI NA)
408.943.7019
mtran@semi.org
This meeting’s details are subject to change, and additional review sessions may be scheduled if necessary. Contact
the task force leaders or Standards staff for confirmation.
Telephone and web information will be distributed to interested parties as the meeting date approaches. If you will
not be able to attend these meetings in person but would like to participate by telephone/web, please contact
Standards staff.
Semiconductor Equipment and Materials International
3081 Zanker Road
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Phone: 408.943.6900, Fax: 408.943.7943
DRAFT
SEMI Draft Document 5472
REVISION OF SEMI E43-1108,
RECOMMENDED PRACTICE FOR ELECTROSTATIC MEASUREMENTS
ON OBJECTS AND SURFACES with title change to: GUIDE FOR
ELECTROSTATIC MEASUREMENTS ON OBJECTS AND SURFACES
1 Purpose
1.1 The purpose is to provide guidance for reproducible electrostatic measurements on any surface or object,
consistent with the scope and limitations set forth below.
2 Scope
2.1 The measurement methods described herein can be applied to characterize the general electrostatic charge,
voltage, field level(s), and electrostatic discharge (ESD) on objects and surfaces in semiconductor manufacturing
environments. Acceptable equipment, calibration, and measurement techniques are described in this Document.
Appendices include background information on the equipment specified and calibration procedures, as well as
information and advice on performing a useful general electrostatic survey.
NOTICE: SEMI Standards and Safety Guidelines do not purport to address all safety issues associated with their
use. It is the responsibility of the users of the Documents to establish appropriate safety and health practices, and
determine the applicability of regulatory or other limitations prior to use.
3 Limitations
3.1 Direct measurement of charge requires the use of a Coulomb meter. Charges on an isolated conductor can be
measured by transferring the charge into the Coulomb meter by contacting the isolated conductor with the Coulomb
meter input probe. Charges on isolated conductors and insulators can be measured by transferring the charged object
into a Faraday enclosure that is connected to the Coulomb meter. These measurements can be relatively precise if
care is taken in the transfer process to avoid changing the charge level when making the measurements.
3.2 Direct measurement of charge is often impractical, due to the object size or difficulties in moving the charged
object from its location to the Faraday enclosure. In these instances, charge is indirectly evaluated by measurement
of the electrostatic field or the electrostatic potential of a charged surface using an electrostatic fieldmeter,
electrostatic voltmeter, electrometer in the voltage-measurement mode, or a high-impedance contacting digital
voltmeter (HIDVM).
3.3 This Document does not describe equipment and techniques capable of making highly precise measurement of
electrostatic charge. No methods of preconditioning the surface prior to measurements and no methods of characterizing the basic electrostatic performance of materials, such as tribocharging, resistance/resistivity, and decay rate are
a part of this Document. Measurements made using this Document on the same surface or object may differ due to
differences in the environment or history of the surface or object between the times any two measurements are made.
4 Referenced Standards and Documents
4.1 SEMI Standards
SEMI E33 — Guide for Semiconductor Manufacturing Equipment Electromagnetic Compatibility (EMC)
5 Terminology
5.1 Acronyms
5.1.1 ANSI — American National Standards Institute
5.1.2 AHE — automated handling equipment
5.1.3 CDM — charged device model
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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Document Number: 5472
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5.1.4 DC — direct current
5.1.5 EED — ESD event detector
5.1.6 EMC — electromagnetic compatibility
5.1.7 EMI — electromagnetic interference
5.1.8 ESD — electrostatic discharge
5.1.9 ESVM — electrostatic voltmeter
5.1.10 HBM — human body model
5.1.11 HIDVM — high-impedance contacting digital voltmeter
5.1.12 IC — integrated circuit
5.1.13 IEC — International Electrotechnical Commission
5.1.14 iNARTE — International Association for Radio, Telecommunications, and Electromagnetics
5.1.15 JEDEC — Joint Electron Devices Engineering Council
5.1.16 LSR — low series resistance
5.1.17 MIL-STD — United States Military Standard
5.1.18 MM — machine model
5.1.19 SI — International System of Units
5.2 Definitions
5.2.1 electromagnetic compatibility (EMC) — the ability of electronic equipment to function properly with respect
to environmental electromagnetic interference (EMI). [SEMI E33]
5.2.2 electromagnetic interference (EMI) — the degradation of the performance of an equipment, transmission
channel, or system caused by an electromagnetic disturbance. [SEMI E33]
5.2.3 electrostatic discharge (ESD) — the rapid spontaneous transfer of electrostatic charge induced by a high
electrostatic field. [SEMI E78]
NOTE 1: ESD may also be referred to as an ‘ESD event’.
5.2.4 grounded — connected to earth or some other conducting body that serves in the place of earth.
5.2.5 ground — a conducting connection between an object, electrical equipment, and earth, such as the portion of
an electrical circuit of the same electrical potential as earth.
6 Safety Precautions
6.1 Measurements of Very High Electrostatic Potentials (>30,000 V)
6.2 Measurements of very high electrostatic potentials (>30,000 V) may need to be done at larger distances than the
commonly used 2.54 cm (1 inch) or less to avoid exceeding the measurement range of the meter and/or an ESD
event to the meter.
6.3 Measurements on Moving Objects or Surfaces
6.3.1 Care should be taken, when attempting to read electrostatic charges on moving objects or surfaces, to maintain
correct distance and avoid any contact; this is to assure ‘good’ readings with no mechanical damage or personal
injury.
6.4 Measurements Using Electrostatic Voltmeters
6.4.1 Avoid touching electrostatic voltmeter probes during operation as their surfaces may be at elevated potentials
that represent a shock hazard to the operator.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards commi ttee (document
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7 Equipment
7.1 Electrometer (Direct Measurement of Electric Charge or Voltage)
7.1.1 An electrometer is an electrical instrument for measuring electric charge, electric current, and/or electrical
potential difference (i.e., voltage). Measurements of electric current with an electrometer are not discussed in this
Document. An electrometer that measures electric charge only is called a Coulomb meter.
7.1.2 One of the typical features of an electrometer used in the charge or the voltage measurement mode is very
high input impedance. That high impedance is needed to prevent or to minimize the transfer of electric charges
between the measured object and electrometer. Ideally, the input impedance would be infinite. In practice, it is
limited by intrinsic, physical material properties of insulators and by stray leakage paths between the input terminals.
Low-voltage electrometers (below 200 V) have typical input resistances of 1014 Ω or higher and accuracies better
than 0.1%. In the voltmeter mode, an electrometer can resolve microvolt potentials. High-voltage electrometers
(kilovolts range) usually rely on resistive voltage dividers and have typical input resistances in the 1011 Ω range with
accuracies in the 1% range. It is important to evaluate and understand the burden that the input impedance of an
electrometer represents when measuring charge or voltage on charged objects.
7.2 Fieldmeter/Field Sensor
7.2.1 An electrostatic fieldmeter measures the value of the electrostatic field created by an object under test.
Electrostatic fieldmeters are calibrated and recommended for use at a particular distance from the charged object.
Fieldmeters are best suited for making general surveys or audits, for making measurements of surfaces at very high
electric potentials (i.e., charge levels), and for making measurements when long-term stability is not important. They
are not well suited for measurements of surfaces with very low charge levels or when high spatial resolution of the
surface charge is needed. The fieldmeter modifies the electric field that is being measured.
7.2.1.1 The fieldmeter/electrostatic locator/field sensor will henceforth be referred to as ‘fieldmeter’. For
measurements in the presence of air ionization, a chopper-stabilized fieldmeter is required. The fieldmeter is
typically capable of making field measurements at a distance of 2.54 cm (1 inch) or less, from the field source to the
fieldmeter sensor for this Document, as written. However, see § 10.2.4 for fieldmeters that are operated at fixed
distance(s), and adjust values in this Document where applicable. The handheld fieldmeter is practical as an
electrostatic locator only because precise measurements need a fixed distance between the fieldmeter sensor and the
object under test.
7.3 Electrostatic Voltmeter (ESVM)
7.3.1 An ESVM measures an electric potential of an object under test. An ESVM indicates the presence and allows
for calculation of the charge(s) creating the electrostatic field. Under appropriate conditions, ESVMs provide a
better approximation of the charge level as compared to fieldmeters. ESVMs are relatively free of drift and more
environmentally stable as compared to fieldmeters.
7.3.1.1 ESVMs exhibit a high degree of accuracy that is independent of the distance from the object under test.
Thus, they are considered better suited for making more accurate and repeatable measurements as compared to
fieldmeters. The probe can be located very close to a charged surface without arc-over, and, under appropriate
conditions, can resolve a small spatial area on a surface.
7.4 High-Impedance Contacting Digital Voltmeter (HIDVM)
7.4.1 An HIDVM is capable of making direct contact measurements of electrical potentials on small objects under
test (e.g., integrated circuit [IC] pins). An HIDVM should have both a high input resistance and low capacitance (i.e.,
high impedance). This is necessary to avoid removing the charge from the object under test by discharging it
through the input resistance or transferring it to the capacitance of the HIDVM.
7.4.1.1 For the purpose of making voltage measurements on IC pins, or similar-sized objects, the HIDVM should
have an input resistance greater than 1014 Ω and an input capacitance less than 10-2 pF. In any case, testing should be
done with known voltages on the object under test to establish the effect of the measurement instrument.
7.5 Meter Stability
7.5.1 All previously mentioned measurement instruments should be turned on and preconditioned for as long a
warm-up period as recommended by the manufacturer.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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Document Number: 5472
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DRAFT
NOTE 2: See Related Information 1 for notes on equipment accuracy and limitations.
7.6 ESD Event Detection
7.6.1 An electrostatic discharge, also commonly referred to as an ESD event, is a source of damage to the devices
and reticles. Measurements of ESD events are the only direct way of assessing the actual ESD exposure. ESD events
can be measured directly or indirectly. Direct measurements are possible by inserting a current probe into the
discharge path and measuring the discharge current. Such measurements, though providing the maximum accuracy,
are largely limited to laboratories as it is impractical to make them in an operating factory. A practical and sensitive
way of identifying ESD events is by detecting a specific electromagnetic field transient that is generated by an ESD
event. Though this method is a qualitative technique that does not offer the precision of the current probe
measurements, it does offer a practical way of assessing ESD exposure in situ.
8 Sufficient Number of Measurements
8.1 The number of independent measurements should be determined by the user. Tests can be repeated to make
them more representative of actual electrostatic charge conditions in the surveyed area. The results may vary due to
environment (e.g., humidity) and workstation setup/conditions. However, any measurement that is outside of userdefined limits or different than a benchmark value should be repeated more than once after performing a zero check
of the measurement equipment. This is to validate previous reading(s) and/or establish range/bounds in the case of
varying results on previous reading(s).
9 Test Methods, Measurements, and Performance Verification Methods
9.1 Coulomb Meter Measurements
9.1.1 Equipment Selection
9.1.1.1 Use a Coulomb meter for direct measurement of charge. A feedback-type Coulomb meter is recommended
for charge measurements for the most complete transfer of charge. Shunt-type Coulomb meters do not completely
transfer charge and are not as straightforward to use as feedback-type Coulomb meters. When using a Faraday
enclosure, the Faraday enclosure should be large enough to hold the objects to be measured. The Faraday enclosure
is used to measure charge on insulating materials as well as on conductors.
9.1.2 Performance Verification of a Coulomb Meter (or an Electrometer Used in the Charge Measurement Mode)
— Refer to Figure 1.
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Charge
Capacitor
Charging
Source
STEP 1
Disconnect
Charging
Source from
Capacitor
STEP 2
Connect
Coulomb Meter
to Capacitor
Coulomb Meter
STEP 3
Figure 1
Verifying Performance of the Coulomb Meter
9.1.2.1 Reset (zero) the instrument prior to each measurement.
9.1.2.2 Maintain a reference calibration capacitor. It should be a polystyrene or polypropylene 10 nF capacitor (e.g.,
class C0G, low series resistance [LSR]). Measure the value of the capacitor to better than 1%. It is important to
handle the reference calibration capacitor very carefully. Do not touch or hold the capacitor by its body or discharge
it by touching both leads with the fingers. Hold the capacitor by one lead only. Use a clip lead connected between
ground and this lead of the capacitor to maneuver the other lead of the capacitor between the ‘hot’ side of the
charging source and the input terminal of the Coulomb meter.
9.1.2.3 Charge the reference calibration capacitor to 1 V with a charging source (i.e., power supply). Calculate the
amount of charge on the capacitor by multiplying the voltage by the value of the capacitor. Example: 1 V × 10 nF =
10 nC of charge.
9.1.2.4 Disconnect the charging source from the capacitor.
9.1.2.5 Connect the Coulomb meter input probe to the capacitor and discharge the capacitor into the Coulomb meter.
The Coulomb meter should indicate the calculated value.
9.1.3 Measurements
9.1.3.1 Best results are achieved when all surfaces surrounding the measurement area are grounded (to minimize the
effects of stray fields on the measurement) and when a consistent, systematic handling method is used during the
measurement process. The operator should be grounded using a grounded wrist strap.
9.1.3.2 Isolated Conductors — To measure the charge on an isolated conductor, touch the lead from the Coulomb
meter to the isolated conductor.
9.1.3.3 Faraday Enclosure Measurements — Refer to Figure 2. To measure the charge on an object, carefully pick
up the object with an insulated tool and place the charged object into the Faraday enclosure. Special handling
considerations: Be careful not to add or subtract any charge in the process of moving the charged object into the
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Charging
Source
DRAFT
Document Number: 5472
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DRAFT
Faraday enclosure. Don’t let the charged object rub or slide against any other surface, as this may add or subtract
charge from the object.
Place object into
Faraday
enclosure.
Coulomb Meter
Faraday Enclosure
Figure 2
Measurement with a Coulomb Meter and Faraday Enclosure
9.1.4 Limitations
9.1.4.1 Do not attempt to measure charges of magnitudes that are below the drift rate of the Coulomb meter.
9.2 Voltage Measurements with Electrometer
9.2.1 Equipment Selection
9.2.1.1 Measuring with an electrometer working in the voltage mode is very similar to measuring with any other
voltmeter or multimeter. The major differences between the ordinary voltmeter and the electrometer are that the
input impedance of the electrometer is orders of magnitude higher, and grounded objects near the measurement
location can affect the reading.
9.2.2 Performance Verification of an Electrometer Used in the Voltage Mode
9.2.2.1 It is good practice to occasionally check the performance of the electrometer by connecting it to a known
voltage source, and comparing its readings with readings taken by another reference voltmeter.
9.2.3 Zeroing an Electrometer Used in the Voltage Mode
9.2.3.1 Except on some older analog models, there are usually no provisions to zero an electrometer. Some
electrometers with analog or digital read-outs do allow offsetting of a reading, as well as relative (i.e., delta)
measurements. However, the electronic zero of the electrometer is usually set by the manufacturer, and should be
part of the normal calibration. It is good practice to occasionally check the zero by shorting the input terminals
together and verifying that the zero reading is within the manufacturer’s specifications.
9.2.4 Measurement
9.2.4.1 Connect the ‘common’ terminal of the electrometer through a test lead to the reference plane or ground.
Connect the ‘hot’ or signal lead to the object or test point of interest. Some electrometer measurements will use a
separate wire or shield connected to the electrical ground or a guard ring. Connect this as recommended by the
manufacturer of the equipment.
9.3 Electrostatic Fieldmeter and ESVM Measurements
9.3.1 Performance Verification of Fieldmeters and ESVMs — Refer to Figure 3.
9.3.1.1 Choosing Test Voltage(s) — Choose one or more test voltage(s) from Table 1, based upon the electrostatic
field/voltage level of concern:
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DRAFT
Table 1 Test Voltages
Field of Concern
Test Voltage
Under 4 kV/m or 100 V/2.5 cm
100 V
Under 40 kV/m or 1 kV/2.5 cm
1 kV
Over 200 kV/m or 5 kV/2.5 cm#1
5 kV
#1 If fieldmeter or ESVM performance verification is needed above 5 kV/2.5
cm, it is left to the user to select values using this table as a guide.
9.3.1.2 Equipment Performance Verification — Charge a conductive, isolated test plate to the desired verification
voltage. Use of a suitable power supply or a charged plate monitor for test purposes is recommended.
9.3.1.3 Assuring Meters and Operator Are Grounded — Assure that the fieldmeter, ESVM, and operator are
grounded. Turn on the meter and zero it as required according to manufacturer’s instructions.
9.3.1.4 Directing or Pointing the Sense Head — Direct or point the sense head of the fieldmeter or ESVM at the
center and parallel to the surface of the plate at a distance at least twice of that recommended by the manufacturer.
Slowly move the sense head toward the surface of the charged plate until a reading equal to the voltage applied to
the plate in ¶ 9.3.1.1 above is displayed by the meter. Measure and record the distance from the sense head to the
surface to the plate. Using the plate voltage from ¶ 9.3.1.1 above and the recorded distance, compute the field
strength for the fieldmeter. See Figure 3.
9.3.1.5 Alternative to ¶ 9.3.1.2 — Take measurements at a specified/fixed distance per manufacturer’s instructions.
Locate the sense head of the fieldmeter or ESVM as in ¶ 9.3.1.4, but, at specified distance; reading displayed (on
meter) should be within 5% of applied voltage to plate.
NOTE 3: ¶ 9.3.1.4 or ¶ 9.3.1.5 should be applicable to most meters. However, in every case, the electrostatic fieldmeter or
ESVM manufacturer's instructions should be read, understood, and followed.
9.3.1.6 Other Desired Test Voltages — Repeat ¶ 9.3.1.4 and ¶ 9.3.1.5 for any other desired test voltages.
9.3.2 Check the zero on the fieldmeter or ESVM as specified by the manufacturer. Usually this is done while the
probe is positioned to view a grounded surface. If the zero of the meter has drifted by more than 5% of the test
voltage for any range contained in Table 1, the meter is not suitable for use for measurements over that range. It may
be suitable for use over other ranges contained in Table 1, using other test voltages. Reverify the meter’s calibration
at the selected test voltage.
9.3.3 Measurements with a Fieldmeter
9.3.3.1 Measurements made to this Document should be taken and reported in units that conform to the customer
specifications. Most common fieldmeters manufactured to date have operating instructions that reflect the user doing
calibration and taking measurements in English units of V/inch or V at a fixed distance in inch(es) and in these cases,
raw data are reported/listed directly. The international community and SEMI Standards program regulations specify
that units shall be in International System of Units (SI) units.
9.3.4 Measurement Limitations
9.3.4.1 Measurements made to this Document are only valid for surfaces that are flat to a radius of 1.5 times the
measurement distance from a point directly below the sensor head. For surfaces that are not flat, measurements
should be made by moving the sensor over the surface such that the specified measurement distance is maintained as
closely as possible. These measurements may only be stated as a range, with rounding as applicable to the meter's
measurement range according to ¶ 9.3.1.1. See Figure 4.
NOTE 4: See Related Information 2 for notes on test methods environment and measurements.
9.3.5 Measurements with an Electrostatic Voltmeter (ESVM)
NOTE 5: See Figure 3.
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A) Connect meter and charged plate directly to the same ground reference.
B) Hold the meter so that the sense head is approximately 2.54 cm away from the
charged plate.
C) The meter reading should be within 5% of the voltage applied to the charged
plate.
D) Assure that both the operator and the meter are properly grounded.
Figure 3
Fieldmeter and ESVM Verification Check
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A) Make sure meter is properly grounded according to manufacturer's
instructions.
B) Scan approximately 2.54 cm along both sides and ends of carrier.
C) Scan approximately 2.54 cm length of carrier and top-center of
wafers with meter.
D) Note high-low values for B) & C).
E) Assure that the operator is properly grounded.
Field emanating from carrier of charge
semiconductor wafers.
Meter
Wafers
Carrier
Ground Plane
Figure 4
Example of a Survey of a Carrier of Semiconductor Wafers
9.3.6 Selecting the ESVM
9.3.6.1 Select an ESVM with a measurement range consistent with the anticipated levels of electrostatic
potentials/charge on the objects to be measured. The selection of too high a measurement range will sacrifice
voltage resolution, while selection of too low a range will cause out-of-range operation (i.e., saturation).
9.3.6.2 To measure moving objects, select an ESVM with a speed of response fast enough to detect the objects
when they are moving past the electrostatic voltmeter probe at the highest anticipated velocity.
9.3.6.3 Select a side- or end-viewing probe for the ESVM as is best suited to view the target object or surface when
the probe is installed in equipment.
9.3.7 Measurements
9.3.7.1 Position the probe in front of the surface to be measured. Best results are obtained when the probe is placed
at the distance recommended by the manufacturer.
9.3.8 Measurement Limitations
9.3.8.1 Voltage levels on isolated conductors can be measured. Insulators do not have a uniform surface charge
distribution. Therefore, it is considered that voltage levels measured on insulators indicate an electrostatic field
strength in a particular area. Under certain conditions, a surface charge on the insulator can be calculated from the
electrostatic potential reading provided by the ESVM.
NOTE 6: SEMI has published an ESD Guide (SEMI AUX021) to complement this Document. Refer to this ESD Guide for
additional information on measurements of charge on insulators.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards commi ttee (document
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9.4 High-Impedance Contacting Digital Voltmeter Measurements (HIDVM)
9.4.1 Equipment Selection
9.4.1.1 Measuring with an HIDVM is very similar to measuring with any other voltmeter or multimeter. The major
difference between an ordinary voltmeter and the HIDVM is that the input resistance of the HIDVM is orders of
magnitude higher and the input capacitance is orders of magnitude lower. This allows the HIDVM to make
measurements of voltages on small objects without altering the actual voltages.
9.4.2 Performance Verification of an HIDVM
9.4.2.1 It is good practice to occasionally check the performance of the HIDVM by connecting it to a known
voltage source, and comparing its readings with readings taken by another reference voltmeter.
9.4.3 Zeroing an HIDVM
9.4.3.1 Depending on the instrument used, the zero level of the HIDVM may be adjustable manually, adjustable
automatically, or there may be no adjustment at all, except during the manufacturer’s normal calibration procedures.
It is good practice to occasionally check the zero by shorting the input terminals together and verifying that the zero
reading is within the manufacturer’s specifications. It may also be part of the normal use procedure to touch the
measuring probe to a ground point to remove any residual charge before contacting the desired measurement
location. Consult manufacturer’s instructions for more information.
9.4.4 Measurement
9.4.4.1 Connect the ‘common’ terminal of the HIDVM through a test lead to the reference plane or ground. Connect
the measurement probe (i.e., ‘hot’ or signal lead) to the object or test point of interest. Some types of HIDVMs
require the measurement probe to contact a ground point before contacting the measurement point. Particularly
when measuring voltages on small objects, hold the probe as steady as possible, as changing the capacitance of the
measurement system may affect the accuracy of measurement.
9.4.5 Measurement Limitations
9.4.5.1 Voltage levels on even small isolated conductors can be measured, but the HIDVM input capacitance and
resistance will affect the accuracy of measurement. Prior to making measurements, a known voltage should be
placed on the object of interest, and compared to the voltage measured by the HIDVM. A correction factor can
thereby be developed for HIDVM measurements made on that particular object’s voltage, if necessary.
NOTE 7: Refer to Related Information R1-3 for an example of a measurement procedure to determine the effect of the HIDVM
probe contact on the voltage of an object.
9.5 Electrostatic Discharge Measurements
9.5.1 Principle of Operation
9.5.1.1 An ESD event generates an electromagnetic field with a specific signature characterized by:
 very short rise time — as short as tens or hundreds of picoseconds,
 very short duration — from a few nanoseconds to several hundred nanoseconds,
 very broad frequency range — up to several gigahertz, and
 often high magnitude.
9.5.1.2 Correlation between the magnitude of ESD events, measurements of electromagnetic field generated by
ESD events, and the verification of the performance of ESD event detectors (EEDs) can be done using the various
industry ESD simulators.
NOTE 8: Refer to § 12.3 for more information concerning the performance verification of EEDs.
9.5.1.3 Such parameters as the distance between the place of discharge and the location of an antenna are a very
important part of characterizing the event.
9.5.2 Measurement Equipment for ESD Events
9.5.2.1 There are several types of equipment available to detect and to measure electromagnetic fields from ESD
events.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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9.5.2.2 High-Speed Storage Oscilloscopes
9.5.2.2.1 A high-speed digital storage oscilloscope equipped with proper antennas provides the most comprehensive
information about waveform and magnitude of electromagnetic signals caused by ESD events. The minimum
requirement for an oscilloscope used for this purpose is a 500 MHz bandwidth. Optimum bandwidth should be equal
to or greater than 1GHz. The sampling rate should be at least five times the bandwidth.
9.5.2.2.2 Equipment with lesser performance specifications would either miss or misinterpret important parameters
of ESD events.
9.5.2.2.3 The use of a high-speed oscilloscope should be accompanied by the use of a proper antenna for receiving
the electromagnetic fields. For time-domain measurements it is important to use an antenna with a flat frequency
response since frequency correction that is common in the frequency domain is not possible for time-domain
measurements. Also, it is important to note that a typical oscilloscope captures only one event (e.g., first or last one,
depending on trigger setting), missing multiple ESD events that are common.
9.5.2.2.4 Spectrum analyzers commonly used in electromagnetic compatibility (EMC) testing and wireless
communication are not practical for detecting electromagnetic signals from ESD events due to their unacceptably
low acquisition speed. Refer to SEMI E33 for more information on EMC.
9.5.2.3 ESD Event Detectors (EED)
9.5.2.3.1 While an oscilloscope provides comprehensive information on the waveform of the ESD event, it may not
be practical for continuous monitoring of ESD occurrences in the process, nor in multipoint measurements due to
limitations of the number of channels. EEDs provide detection and measurements related to the strength of an ESD
event with the ability to perform multipoint measurements and data collection at much lower cost than an
oscilloscope.
9.5.2.3.2 EEDs may range from a simple device with only an indication of the occurrence of an ESD event, to a
more complex device that can measure the strength of each individual ESD event and provide correlation to the
strength of the ESD based on the distance from the location of the ESD and other parameters.
9.5.2.3.3 More advanced EEDs can provide resolution of multiple ESD events and separation between ESD events
and other electromagnetic events with similar properties.
10 Certification
10.1 It is reasonable to expect that the person chosen to survey production areas for electrostatic charge levels has
been certified to perform that task. The certified person should be someone qualified by education and/or training to
calibrate and make measurements with the equipment called out in this Document. The ESD Association conducts
such education programs and certifies individuals as ESD Program Managers. 1 The International Association for
Radio, Telecommunications, and Electromagnetics (iNARTE) administers an ESD Engineer and ESD Technician
certification program.2
11 Documentation
11.1 Meter calibration check(s), benchmark or laboratory measurements, items/areas surveys, and/or any other
electrostatic field measurements should be recorded in permanent records.
11.2 Recorded are initial reading, second/validation reading, and any subsequent readings taken to verify that
acceptable levels are observed.
11.3 Record sheet(s) should include the meter used, area (i.e., name), location, date, environmental information if
available (i.e., temperature, humidity), name of person who took readings, and space for comments.
12 Related Documents
NOTE 9: These documents are for information only. In the case of conflict, this SEMI E43 Document should take precedence.
Also, it is recommended that the user review Appendices in this Document before its use. Unless otherwise indicated, all
documents listed should be the latest published revision.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards commi ttee (document
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12.1 ESD Association Standards 1 Including Those Also Accredited by American National Standards Institute
(ANSI)]and Joint Electron Devices Engineering Council (JEDEC)
12.1.1 ANSI/ESD STM3.1 — Ionization
12.1.1.1 Test methods and procedures for evaluating and selecting air-ionization equipment and systems are
provided in this standard, which establishes measurement techniques to determine ion balance and chargeneutralization time for ionizers.
12.1.2 ANSI/ESD STM4.2 — ESD Protective Worksurfaces-Charge Dissipation Characteristics
12.1.2.1 This standard test method prescribes a procedure for measuring the electrostatic charge dissipation
characteristics or worksurfaces used for ESD control.
12.1.3 ANSI/ESDA/JEDEC JS-001— ANSI/ESDA/JEDEC Joint Standard for Electrostatic Discharge Sensitivity
Testing-Human Body Model (HBM) Component Level
12.1.3.1 This standard test method defines procedures for testing, evaluating, and classifying the ESD sensitivity of
components to the defined human body model (HBM).
12.1.4 ESD DSTM5.2 — Electrostatic Discharge Sensitivity Testing-Machine Model (MM) Component Level
12.1.4.1 This standard established a test procedure for evaluating the ESD sensitivity of components to a defined
machine model (MM), and outlines a system whereby the sensitivity of such components may be classified.
12.1.5 ANSI/ESD S5.3.1 — Charged Device Model (CDM)-Component Level
12.1.5.1 This standard is a test method for evaluating active and passive components’ ESD sensitivity to a defined
charged device model (CDM).
12.1.6 ANSI/ESD S20.20 — Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding
Electrically Initiated Explosive Devices)
12.1.6.1 This standard specifies the requirements for designing, establishing, implementing, and maintaining ESD
control programs for ESD-sensitive items susceptible to discharges equal to or greater than 100 V HBM.
12.1.7 ESD SP10.1 — Automated Handling Equipment (AHE)
12.1.7.1 This document covers test methods for evaluating the ESD ground integrity of automated handling
equipment as well as charge generation and charge accumulation on devices in the AHE.
12.1.8 ANSI/ESD S541 — Packaging Materials for ESD Sensitive Items
12.1.8.1 This standard presents requirements and tests methods for selecting packaging materials to be used with
ESD sensitive devices.
12.2 ESD Association Advisory Documents
12.2.1 ESD ADV1.0 — Glossary of Terms
12.2.1.1 Definitions and explanations of various terms used in ESD Association standards and documents are
covered in this advisory. It also includes other terms commonly used in the ESD industry.
12.2.2 ESD TR20.20 — ESD Handbook
12.2.2.1 The ESD Handbook is a complete guide to electrostatic control in the work place. Nineteen chapters cover
ESD basics, control procedures, auditing, symbols, device testing, and standards.
12.2.3 ESD ADV11.2 — Triboelectric Charge Accumulation Testing
12.2.3.1 The complex phenomenon of triboelectric charging is discussed in this Advisory. It covers the theory and
effects of tribocharging. It reviews procedures and problems associated with various test methods that are often used
to evaluate triboelectrification characteristics.
1
ESD Association, 7900 Turin Rd., Bldg. 3, Rome, NY 13440-2069; http://www.esda.org
2 International Association of Radio, Telecommunications, and Electromagnetics (iNARTE), 840 Queen Street, New Bern, NC 28560;
http://www.narte.org
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards commi ttee (document
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12.3 ESD Association Symposium Proceedings
12.3.1 Proceedings of the EOS/ESD Symposium, 2005, 2012
12.3.1.1 These proceedings contain papers authored by T. Maloney of Intel that describe methods for the use and
calibration of ESD event detectors (EEDs).
12.4 Other Related Documents
12.4.1 United States Military Standards2
12.4.1.1 MIL-STD-1686C — ESD Control Program for Protection of Electrical and Electronic Parts, Assemblies
and Equipment (Excluding Electrically Initiated Explosive Devices)
12.4.1.1.1 This military standard establishes requirements for ESD control programs. It applies to United States
military agencies, contractors, subcontractors, suppliers, and vendors. It requires the establishment, implementation,
and documentation of ESD control programs for electrostatic-sensitive devices, but does not mandate or preclude
the use of any specific ESD control materials, products, or procedures. This standard has not been officially
withdrawn although it has been superseded by ANSI/ESD S20.20 (see ¶ 12.1.6).
12.4.1.2 MIL-HDBK-263B — ESD Control Handbook for Protection of Electrical and Electronic Parts, Assemblies
and Equipment (excluding Electrically Initiated Explosive Devices)
12.4.1.2.1 This reference provides guidance, but not mandatory requirements, for the establishment and
implementation of an ESD control program in accordance with the requirements of MIL-STD-1686C.
12.4.2 JEDEC Standards3
12.4.2.1 JESD625A — Requirements for Handling ESD-Sensitive Devices
12.4.2.1.1 This voluntary standard establishes minimum requirements for ESD control methods and materials
designed to protect electronic devices having human body model (HBM) sensitivities of 200 V or greater. It is
intended for use by semiconductor distributors, semiconductor processing and testing facilities, and semiconductor
end users.
12.4.3 International Electrotechnical Commission (IEC) Standards5
12.4.3.1 IEC 61000-4-2 — Electromagnetic compatibility (EMC) – Part 4-2: Testing and measurement techniques –
Electrostatic discharge immunity test
12.4.3.1.1 This IEC document provides requirements and test methods for ESD transient immunity.
12.4.3.2 IEC 61340-5-1 — Electrostatics – Part 5-1: Protection of electronic devices from electrostatic phenomena
– General requirements
12.4.3.2.1 This IEC (International Electrotechnical Commission) document provides guidance for establishing an
electrostatic-charge-control program.
12.4.3.3 IEC/TR 61340-5-2 Electrostatics — Part 5-2: Protection of electronic devices from electrostatic
phenomena – User Guide
12.4.3.3.1 This IEC handbook supplements the information contained in Part 5-1 above.
2
Defense Supply Center Columbus, P.O. Box 3990, Columbus, OH 43216-5000, USA. http://www.dscc.dla.mil
JEDEC Solid State Technology Association (aka the Joint Electron Device Engineering Council), 2500 Wilson Boulevard, Arlington, VA
22201-3834, USA. Telephone: 703.907.7560; Fax: 703.907.7583; http://www.jedec.org
5
International Electrotechnical Commission, 3 rue de Varembé, Case Postale 131, CH-1211 Geneva 20, Switzerland. Telephone:
41.22.919.02.11; Fax: 41.22.919.03.00; http://www.iec.ch
3
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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APPENDIX 1
MEASUREMENT SELECTION MATRIX
NOTICE: This Appendix offers information related to selecting the appropriate measurement methods from those
contained in this document. The material in this Appendix is an official part of SEMI E43 and was approved by full
letter ballot procedures on XXXXXXXXX.
A1-1 Selection of an Appropriate Electrostatic Measurement Method
A1-1.1 Tables A1-1 and A1-2 are intended to assist in the selection of appropriate equipment for making
electrostatic measurements. Users should note that a variety of measurement methods is available for any given
situation. Consult manufacturers of the equipment for additional information concerning its proper use and
applicability.
A1-1.2 Some equipment are used for making measurements of electric charge, voltage, or field indirectly. This
means that the desired property can be calculated from the measurement of another physical quantity. For example,
electric charge deposited on an object can be calculated from electrostatic field or electrostatic voltage (i.e.,
potential) associated with that object.
Table A1-1 Recommended Equipment Types for Electrostatic Measurements
Instrument
Object and
Quantity
Measured
Coulomb Meter Coulomb Meter
HighFieldmeter Electrostatic Electrometer Oscilloscope
(direct contact
with the
Impedance
Voltmeter
(voltage
with the
Faraday Cup Contacting
(ESVM) measurement
measurement
Digital
mode)
electrode)
Voltmeter
(HIDVM)
Surface charge Yes (for
on large
conductors)
surfaces
Yes, for objects Yes,
limited by the indirectly
size of the
Faraday Cup
Surface charge Yes (for
on small
conductors)
objects and
devices
(stationary
measurement)
Yes
Surface charge No
on device/unit
in process
(moving parts)
No (not with a
stationary
Faraday Cup)
Yes,
indirectly
EMI
Detector
and ESD
Event
Detector
(EED)
Yes,
indirectly
Yes,
indirectly
No
No
Yes,
indirectly
No
Yes,
(method is indirectly
not
accurate
enough)
Yes,
indirectly
No
No
Yes,
indirectly
Yes,
Yes,
indirectly, indirectly
but size of
the
measured
object and
presence
of stray
electric
fields
influence
accuracy
Yes,
indirectly
No
No
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Instrument
Object and
Quantity
Measured
Coulomb Meter Coulomb Meter
HighFieldmeter Electrostatic Electrometer Oscilloscope
(direct contact
with the
Impedance
Voltmeter
(voltage
with the
Faraday Cup Contacting
(ESVM) measurement
measurement
Digital
mode)
electrode)
Voltmeter
(HIDVM)
EMI
Detector
and ESD
Event
Detector
(EED)
Surface charge Yes (for
on process
conductors)
equipment
No
Yes,
indirectly
Yes,
Yes,
indirectly, indirectly
but size of
the
measured
object and
presence
of stray
electric
fields
influence
accuracy
Yes,
indirectly
No
Voltage
measurements
on isolated
conductors
Yes, if object
capacitance is
known
Yes
Yes, but
Yes,
measuring indirectly
distance,
size of the
measured
object,
and
presence
of stray
electric
fields
influence
accuracy
Yes
Yes, but
No
input
impedance
will affect
the accuracy
of
measurement
Yes, if object
capacitance is
known
No
Table A1-2 Recommended Instruments for ESD Event Measurement
Instrument
Object and
Quantity
Measured
Coulomb Meter Coulomb Meter
HighFieldmeter Electrostatic Electrometer Oscilloscope
(direct contact
with the
Impedance
Voltmeter
(voltage
with the
Faraday Cup Contacting
measurement
(ESVM)
measurement
Digital
mode)
electrode)
Voltmeter
(HIDVM)
EMI
Detector
and ESD
Event
Detector
(EED)
ESD event
detection and
measurement
in facility
No
No
No
No
No
No
Yes
Yes
ESD event
detection and
measurement
in process
equipment
No
No
No
No
No
No
Yes
Yes
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RELATED INFORMATION 1
NOTES ON EQUIPMENT
NOTICE: This Related Information is not an official part of SEMI E43-XXXX and was derived from the work of the global
Metrics Technical Committee. This Related Information was approved for publication by letter ballot procedures on
XXXXXXXX.
NOTE 10: This Related Information contains relevant information for using SEMI E43 in situations commonly encountered with
semiconductor manufacturing facilities and equipment. Determination of the suitability of the material is solely the responsibility
of the user.
R1-1 Use of a Charged Plate Monitor
R1-1.1 A charged plate monitor is an instrument typically used to monitor the performance of air ionization
equipment. Monitoring is done with an electrically isolated 15 cm × 15 cm (6 inches × 6 inches) metal plate,
henceforth referred to as ‘the plate’. The instrument typically provides a means to charge the plate to a known
voltage (e.g., 1000 or 5000 V of either polarity), a plate sensor to determine the voltage on the plate, and timing
circuitry to determine the time required to discharge the plate to a percentage of its initial charge. For the purposes
of this Document, the charged plate monitor, or a separate isolated plate assembly, can be used for performance
verification purposes as explained in § 9.
R1-1.2 A charged conductive plate establishes a uniform electrostatic field as long as measurements are not made
close to the edges and the measurement distance is small relative to the dimensions of the plate. This Document
recommends meters capable of making field measurements at a distance of 2.54 cm (1 inch) or less from a 15 cm (6
inch) square plate as a practical means to ensure performance verification to a known field.
R1-1.3 Charged plate monitors using 15 cm square plates with a 20 pF capacitance are commonly used to determine
the performance of air ionization systems. Isolators are used to assure minimal leakage to ground. A 15 cm square
plate of any metal approximately 1 mm thick and isolated from adjacent surfaces using insulative standoffs is a
perfectly acceptable substitute.
R1-2 The Verification Procedure
R1-2.1 The verification procedure is intended to ensure that the meter used does not drift excessively (less than 5%
in 300 s [5 minutes]) and can repeatedly measure a known field to within 5%. When actually using the meter to do a
field survey, maintaining the correct distance from the sensor head to the surface or object being measured becomes
the greatest source of error. If the ability of the meter operator to maintain the correct distance is within 10%, then
the total error of the measurement would be within about 12% using this calibration procedure (root mean square
[RMS] of the 5% drift, 5% repeatability, and 10% distance errors).
R1-2.2 If two operators using two different meters follow the verification procedure, and they both are able to
maintain the correct distance to within 10% as above, then they both would be within 12% of the true field strength
when measuring the same surface or object. Taking the RMS of these errors, the two operators using two meters
should be within 17% of each other.
R1-2.3 Many meters read out in V/inch, therefore 100 V/inch is about 4,000 V/m.
R1-3 Use of the High-Impedance Contacting Digital Voltmeter (HIDVM)
R1-3.1 The HIDVM is used to measure the voltage resulting from the charge on conductive objects. To provide
accurate measurements, both high resistance and low capacitance are required. The following is an example of a test
procedure to measure IC pin voltages. This procedure will give an indication of the effect of the HIDVM on the
known pin voltage. It will be possible to use this information to determine a correct factor for measurements made
on similar small objects. This same procedure may be performed on any object under consideration for HIDVM
measurements.
R1-3.2 Equipment Required For IC Pin Voltage Measurements
R1-3.2.1 High-Voltage DC Current-Limited Power Supply — Capable of adjustable voltage output up to 1000 V
minimum. For safe operation of the power supply, refer to the manufacturer’s equipment manual. Connect a 100
MΩ resistor between the positive lead of the power supply and the device under test (DUT) being charged.
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R1-3.2.2 HIDVM — With ±1000 V full scale (minimum), ±5% accuracy, 1014 Ω minimum input resistance, and 0.1
pF maximum input capacitance.
R1-3.2.3 Ionizing Blower — Used to discharge the DUT and test fixture before every measurement. Ionizer balance
should be better than ±10 V.
R1-3.2.4 Test Fixture — To hold the DUT approximately 2.54 cm (1 inch) from a ground reference plate.
R1-3.3 Test Method Details for IC Pin Voltage Measurements
R1-3.3.1 Clean the DUT with isopropyl alcohol (IPA) before testing. Handle DUT with either a clean wipe or
tweezers at all times after cleaning.
R1-3.3.2 Attach the DUT to the test fixture.
R1-3.3.3 Attach the ground lead from the power supply to the ground plate of the test fixture. Connect the ground
lead from the HIDVM to the same point.
R1-3.3.4 Use the ionizer to discharge the test fixture and DUT before testing at each voltage level.
R1-3.3.5 Select a voltage level on the power supply and use the positive test lead from the power supply to briefly
contact several pins of the DUT.
R1-3.3.6 Immediately thereafter, use the test probe of the HIDVM to measure the voltage on the DUT pins.
R1-3.3.6.1 Hold test probe on the DUT pins only long enough to record the voltage. Remove it for 10 s, and then
measure the voltage quickly again. This remeasurement will give an indication of the amount of self-discharge of
the DUT. If the DUT discharges more than 10% in 10 s, clean the DUT again and make sure it is thoroughly dry
before repeating the measurement.
R1-3.3.6.2 In a second test, charge the DUT pins again as in R1-3.3.5 and then hold the probe on the DUT pins for
the entire 10 s, to determine how much discharge is caused by the HIDVM probe on the DUT pins.
R1-3.3.6.3 Use the data from steps R1-3.3.6.1 and R1-3.3.6.2 to determine whether a modification should be made
in the HIDVM voltage readings. For example, in high humidity the self-discharge may be greater than 10% in 10 s.
Alternatively, the actual input resistance and capacitance of the HIDVM probe may cause a significant drop in the
measured voltage after 10 s. This change will indicate that a correction of the actual voltage measured may be
needed based on the approximate measurement time.
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RELATED INFORMATION 2
NOTES ON TEST METHODS
NOTICE: This Related Information is not an official part of SEMI E43-XXXX and was derived from the work of the global
Metrics Technical Committee. This Related Information was approved for publication by letter ballot procedures on
XXXXXXXX..
NOTE 11: This Related Information contains relevant information for using SEMI E43 in situations commonly encountered with
semiconductor manufacturing facilities and equipment. Determination of the suitability of the material is solely the responsibility
of the user.
R2-1 Prior handling and environmental conditions will significantly impact the field strength to be measured.
Below are some examples of these considerations.
 The presence of a nearby conductive grounded surface or object will tend to reduce the measured field strength.
This phenomenon is known as field suppression and is illustrated in Figure R2-1.
 Ionization of the surrounding air will tend to reduce the measured field strength by neutralizing the electrostatic
charge on the surface of the object.
 Rubbing or contacting the surface being measured with another object or surface will tend to increase the
measured field strength depending upon the tendency of the two materials in question to tribocharge.
 Increasing humidity will tend to reduce the field strength to be measured because it in turn will reduce the
magnitude of the charge generated on objects and, over time, assist in the neutralization of charge on objects.
 Projections and sharp protrusions on the object being measured, or nearby objects, will increase the field
strength.
 Insulating objects may have very irregular charge distributions.
R2-2 As a result of these considerations, an electrostatic measurement or survey made using this Document is only
useful if these factors are taken into account in a realistic manner. Below are some examples.
 If a surface is only used in a humidity- or temperature-controlled environment, field strength measurements
made under these conditions are the main ones of interest. Measurements made at different humidities or
temperatures may be irrelevant.
 An object may present close to zero field strength in an ionized environment, yet when contacted by another
object may become highly charged. This charge may persist for a period of seconds or minutes while it is
neutralized by the ionized environment. The time required to return the object to its original state may be a
parameter of interest.
 An object resting on a grounded metal surface may have a very low external field strength. If the object is
picked up and measured, the field strength may be much higher.
 Objects of irregular shape and size will give highly variable readings, depending on the position of the sensor
relative to the object.
 Dielectric objects may give highly variable readings, depending upon the position of the sensor relative to the
charge distribution on the object.
 The simple act of handling an object while performing an electrostatic survey can change the electrostatic
charge on the object. The best results will derive from making sure that objects and surfaces are treated and
handled within the bounds of their actual use.
 During equipment verification, maintaining constant/steady voltage is important. If the plate of the charged
plate monitor is initially charged and allowed to float, its voltage will change as the meter is moved close to it.
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Field Lines Due to Static Charge
+ + + + + + + + + + + + + + + + +
Charged Surface
Field Lines Terminate on Ground
and Do Not Accurately
Represent Charge on the Surface
+ + + + + + + + + + + + +
Grounded Surface
Figure R1-1
Field Suppression
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RELATED INFORMATION 3
ESD DAMAGE SIMULATORS
NOTICE: This Related Information is not an official part of SEMI E43-XXXX and was derived from the work of the global
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XXXXXXXX.
NOTE 12: This Related Information contains relevant information for using SEMI E43 in situations commonly encountered with
semiconductor manufacturing facilities and equipment. Determination of the suitability of the material is solely the responsibility
of the user.
R3-1 ESD Damage Simulators
R3-1.1 ESD simulators are used to replicate ESD events. Common types used to characterize semiconductor
devices and equipment include those listed below.
 Component-level HBM ESD Simulator
 Component-level MM ESD Simulator
 Component-level CDM ESD Simulator
 System-level HBM/metal ESD Simulator
R3-1.2 The component-level human body model (HBM) ESD simulator represents the parameters agreed upon for
a standard, which represents the discharge from a typical human body. These parameters are 1500 Ω and 100 pF for
the representative resistance and capacitance respectively of the human body.
R3-1.3 The component-level machine model (MM) ESD simulator represents the parameters agreed upon for a
standard, which represents the discharge from a charged metallic part of an equipment (e.g., automatic handler).
These parameters are 200 pF and zero resistance for the representative capacitance and DC resistance respectively of
the equipment part. We note here that the resulting waveform is highly dependent on the impedance of the
measurement circuitry.
R3-1.4 The component-level charged device model (CDM) ESD simulator represents the parameters agreed upon
for a standard, which represents the discharge from a charged device. These parameters are defined by the resulting
waveform and depend almost exclusively on the capacitance, resistance, and inductance of each device relative to
ground. These parameters should not be confused with the measurement equipment parameters, which also affect
the resulting waveform.
R3-1.5 The system-level HBM/metal ESD simulator represents the parameters agreed upon for a standard, which
represents the discharge from a human holding a metallic instrument. These parameters are the lower resistance
350 Ω and 150 pF for the representative resistance and capacitance respectively of the human holding a metallic
instrument. Note here that the waveform is greatly affected by the measurement equipment parasitics.
NOTE 13: The above component-level ESD simulators have also been used in simulating ESD damage to tooling, such as
reticles. This simulation is left to user discretion.
R3-2 Summary of Procedures
R3-2.1 Component-level HBM ESD Simulator — The procedure for using this simulator to stress test devices or
wafers is based upon the standard requirements. ANSI and the ESD Association approved the HBM standard,
ANSI/ESD STM5.1, which contains a specific device pin combination sequence for stress testing.1 This test
procedure is generally referred to as a ‘Pin-to-Ground’ test since one pin is always grounded while the selected
second pin is stressed. Calibration before use requires added equipment components like a current probe, high-bandpass cable, a short wire, a 500 Ω resistor, and a very high-bandwidth waveform recorder/digitizer. A similar test
method is available from JEDEC in JESD22-A114.2
R3-2.2 Component-level MM ESD Simulator — The procedure for using this simulator to stress test devices or
wafers is based upon the standard requirements. The ANSI/ESD STM5.2-1999 approved MM standard specifies a
specific device pin combination sequence for stress testing. 1 This test procedure is also generally referred to as a
‘Pin-to-Ground’ test since one pin is always grounded while the selected second pin is stressed. This procedure is
exactly the same as for HBM. Calibration before use requires added equipment components like a current probe,
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high-band-pass cable, short wire, a 500 Ω resistor, and a very high-bandwidth waveform recorder/digitizer. A
similar test method is available from JEDEC in JESD22-A115.2
R3-2.3 Component-level CDM ESD Simulator — The procedure for using this simulator to stress test devices or
wafers is based upon the standard requirements. The ANSI/ESD STM5.3.1-1999 approved CDM standard does not
use a pin combination procedure.1 Here the device sits on a charge plate (CP) ‘dead-bug’ style (i.e., package on CP
and leads/pins vertical) and each pin is discharged successively after each charge to the device package. This
procedure is different from that of HBM and MM. Calibration before use requires added equipment components like
a capacitance/inductance calibrator, high band-pass cable, and a very high-bandwidth waveform recorder/digitizer.
A similar test method is available from JEDEC in JESD22-C101.2
R3-2.4 System-level HBM/Metal Simulator — The procedure for using this handheld simulator for testing systems
(e.g., automated test equipment [ATE] testers, automatic handlers, computers, printers, ESD simulators) is based
upon the standard requirements. The IEC 61000-4-2, 1996 (formerly 801-2, 1992) standard uses direct contact or air
discharge to the system under test and is a different procedure from the other three procedures mentioned above. 3
Calibration before use requires the use of a very large, vertical ground plane (at least 1.2 m by 1.2 m [4 foot by 4
foot] square), a high bandwidth current probe, cables, and high-bandwidth waveform recorder/digitizer.
R3-3 Industry Classifications
R3-3.1 HBM Classification
 Class 0 — <250 V
 Class 1A — 250 to <500 V
 Class 1B — 500 to <1000 V
 Class 1C — 1000 to <2000 V
 Class 2 — 2000 to <4000 V
 Class 3A — 4000 to <8000 V
 Class 3B — ≥8000 V
R3-3.2 MM Classification
 Class M1 — <100 V
 Class M2 — 100 to <200 V
 Class M3 — 200 to <400 V
 Class M4 — 400 to <800 V
 Class M5 — ≥800 V
R3-3.3 CDM Classification
 Class C1 — <125 V
 Class C2 — 125 to <250 V
 Class C3 — 250 to <500 V
 Class C4 — 500 to <1000 V
 Class C5 —1000 to <2000 V
 Class C6 — ≥2000 V
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R3-3.4 Handheld Metal HBM Classification
Direct Contact Discharge
Voltage
1.
2.
3.
4.
2,000 V
4,000 V
6,000 V
8,000 V
Current
12.0 A
24.0 A
36.0 A
48.0 A
Air Discharge
Voltage
5.
6.
7.
8.
9.
2,000 V
4,000 V
6,000 V
10,000 V
15,000 V
Current
15.0 A
25.0 A
30.0 A
35.0 A
52.0 A
NOTE 14: Note that the currents for the same voltage level are not the same for contact versus air discharge.
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RELATED INFORMATION 4
OTHER METHODS FOR DETECTING ELECTROSTATIC CHARGE AND
ESD EVENTS IN EQUIPMENT
NOTICE: This Related Information is not an official part of SEMI E43-XXXX and was derived from the work of the global
Metrics Technical Committee. This Related Information was approved for publication by letter ballot procedures on
XXXXXXXX.
NOTE 15: This Related Information contains relevant information for using the standard in situations commonly encountered
with semiconductor manufacturing facilities and equipment. Determination of the suitability of the material is solely the
responsibility of the user.
R4-1 Introduction
R4-1.1 Electrostatic-charge generation is unavoidable whenever materials come in contact. Without an
electrostatic-charge-control program, the problems caused by electrostatic charge are also unavoidable. The most
common problem caused by electrostatic charge is electrostatic discharge (ESD). ESD results in damaged
semiconductor integrated circuits (ICs), photomask defects, magneto-resistive (MR) read head defects in disk drives,
and failures of the drive circuits for flat panel displays (FPDs). ESD also creates a significant amount of
electromagnetic interference (EMI). Often mistaken for software errors, EMI resulting from ESD interrupts the
operation of production equipment. This is particularly true of equipment depending on high-speed microprocessors
for control. Results include unscheduled downtime, increased maintenance requirements, and frequently, product
scrap. Technology trends to smaller device geometries, faster operating speeds, and increased circuit density make
ESD problems worse.6
R4-1.2 For many years electrostatic-charge-control programs concentrated on protecting components from the
electrostatic charge generated on the personnel that handled them. Many electrostatic-charge-control methods were
devised to control the electrostatic charge on people including wrist and heel straps, dissipative shoes and flooring,
and garments. Increasingly, however, the production of electronic components is done by automated equipment, and
personnel never come into contact with the electrostatic-charge-sensitive devices. Solving the ESD problem means
assuring that ESD events do not occur in the equipment used to manufacture and test electronic components.
R4-2 Electrostatic-Charge Control in Equipment
R4-2.1 An effective electrostatic-charge-control program in equipment starts with grounding all materials that
might come close to, or in contact with, the electrostatic-charge-sensitive components. This prevents the generation
of electrostatic charge on equipment components and eliminates them as a source of the electrostatic-charge-creating
ESD events. Care should be taken in a grounding program to assure that moving equipment parts remain grounded
when they are in motion. In some cases, electrostatic-charge-dissipative materials may be substituted for conductive
materials where flexibility, thermal insulation, or other properties not available in conductive materials are needed.
If electrostatic charging of components is unavoidable, electrostatic-charging-dissipative materials may be used to
slow the resulting ESD discharges and prevent component damage.
R4-2.2 Most semiconductors use insulating packaging materials such as ceramics and epoxy. Handling these
insulating materials inevitably generates electrostatic charge, and this charge cannot be removed by grounding the
materials. If electrostatic-charge generation is unavoidable, the only effective method of neutralizing the
electrostatic charge on insulators or isolated conductors is to use air ionization. Ionizers are typically mounted in the
load stations and process chambers of the automated equipment to neutralize the electrostatic charge.
R4-3 Verifying Equipment Electrostatic Charge Control
R4-3.1 An electrostatic-charge-control program begins when the automated equipment is designed by the original
equipment manufacturer (OEM), and then continues throughout the lifetime of the equipment. Two basic issues
need to be demonstrated. First, are all components in the product-handling path connected to ground? Second, as the
product passes through the equipment, is it handled in a way that does not generate electrostatic charge above an
Levit, L. et al., “It’s the Hardware. No, Software. No, It’s ESD!”, Solid State Technology, May 1999, Pennwell Publishing Company, 98 Spit
Brook Road, Nashua NH 03062.
6
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acceptable level on the component? ESD Association Standard Practice EOS/ESD SP 10.1-2000 8 contains test
methods to verify the integrity of the ground path to equipment parts, as well as to determine if the product is being
charged during its passage through the equipment. The test methods are applicable during the original design of the
equipment and during acceptance testing by the end user.
R4-3.2 While the test methods of EOS/ESD SP 10.1-2000 can also be used for periodic verification of the
equipment performance, they have one drawback. The automated equipment should be taken off-line to do the
testing. This means that there is lost production time, and often the periodic testing is eliminated to maintain product
throughput. Other test methods are available that can be performed with the equipment operating online, without
altering or disturbing its operation.
R4-4 ESD and EMI
R4-4.1 When ESD occurs, the discharge time is usually 10 ns or less. Discharging energy in this short time interval
results in the generation of broadband electromagnetic radiation 9, as well as the heat that damages semiconductor
components. This electromagnetic radiation, especially in the 100 MHz to 2 GHz frequency range, is the
electromagnetic interference (EMI) that can affect the operation of production equipment. In addition to ESD
damage to semiconductor devices and reticles, ESD-caused EMI results in a variety of equipment operating
problems including stoppages, software errors, testing and calibration inaccuracies, and mishandling causing
physical component damage.
R4-4.2 EMI Locators — When component damage or equipment problems due to ESD are suspected, it may be
useful to detect the EMI generated by the ESD event. This type of testing is both a starting point for determining that
electrostatic charge has been generated, and it is a measurement point to ascertain that any electrostatic-chargecontrol methods have been successful. EMI locators measure dynamic operating conditions, as it is usually not
necessary to interrupt equipment operations to make measurements.
R4-4.3 Types of EMI Locators — EMI locators are available in a number of different forms. In its simplest form, it
consists of an amplitude modification (AM) radio tuned off station. A popping noise will be heard when an ESD
event occurs. At the most complex it consists of a wideband (i.e., greater than 1 GHz) digital storage oscilloscope
with a set of appropriate antennas, probes, and software. Measurements of radiated interference can be made using
antennas while probes can be connected to equipment parts or electronics and power lines.
R4-4.3.1 An oscilloscope attached to a single antenna can assist in pinpointing the actual location of the ESD
event.8, 10, 11, 12 A set of antennas can be used to not only detect the presence of an ESD event, but to determine the
location of the pulse in three dimensions.13, 14 Using the same concept as a global positioning system (GPS), the
difference in the arrival times of the signal to multiple antennas is directly related to the difference in the distance of
each antenna from the ESD source. With the time deltas and the locations of the antennas known, the location of the
spark can be uniquely identified employing the appropriate analysis program.
R4-4.3.2 Several other types of EMI-locating equipment are currently in use. Most consist of high-frequency
receiving circuitry followed by level detectors to determine the magnitude of the signal. For the purpose of detecting
EMI from ESD events, the equipment should have some way of differentiating the short impulse of EMI from the
ESD event from the continuous high-frequency radiation of other EMI sources. Some instruments contain a counter
to total the number of ESD events above the threshold, or alarms to indicate when the number of ESD events
exceeds a preset number. This type of instrument can be placed near the equipment that is suspected of causing ESD
events and left in place to monitor.
EOS/ESD SP10.1 - 2000 “Automated Handling Equipment (AHA)”, ESD Association, 700 Turin Road, Rome NY 13440.
Tonoya, Watanabe and Honda, “Impulsive EMI Effects from ESD on Raised Floor,” 1994 EOS/ESD Symposium, pp. 164-169, ESD
Association.
10
Takai, Kaneko and Honda, “One of the Methods of Observing ESD Around Electronic Equipments,” 1996 EOS/ESD Symposium, pp. 186192, ESD Association.
11
Greason, Bulach and Flatley, “Non-Invasive Detection and Characterization of ESD Induced Phenomena in Electronic Systems,” 1996
EOS/ESD Symposium, pp. 193-202, ESD Association.
12
Smith, “A New Type of Furniture ESD and Its Implications,” 1993 EOS/ESD Symposium, pp. 3-7, ESD Association.
13
Bernier, Croft, and Lowther “ESD Sources Pinpointed by Analysis of Radio Wave Emissions,” Journal of Electrostatics (44) pp. 149-157,
Nov. 1998, Elsevier Science B.V., P.O. Box 211, 1000 AE Amsterdam Netherlands.
14
Lin, DeChiaro and Jon, “A Robust ESD Event Locator System with Event Characterization,” 1997 EOS/ESD Symposium, pp. 88-98, ESD
Association.
8
9
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R4-4.3.3 Several EMI locators are battery-operated, handheld devices that can be easily carried around a facility or
placed directly in equipment to check for ESD events. This allows the EMI locator to detect signals that might
otherwise be shielded by the equipment’s cover panels. Note that EMI shielding is usually an important part of the
design of most production equipment to prevent radiation from the equipment. This makes the detection of ESD
events outside the equipment more difficult. It allows pinpointing of the location of an ESD event, which can then
be correlated to particular equipment operations.8, 15
R4-4.4 Limitation in Using EMI Locators
R4-4.4.1 One caution needs to be observed when using EMI locators to detect ESD events that cause component
damage. The signal received by these devices is generated in areas usually surrounded by grounded metal
components. It may have to pass through equipment panels and travel some distance through the air before it reaches
the detector. There maybe other radio-frequency (RF) sources and reflecting or absorbing materials in the area. The
actual location of the ESD event may be a considerable distance from the EMI locator. It will be difficult to establish
any correlation between the amplitude of the signal received by the EMI locator and the energy in the ESD event
that produced the signal. The EMI locator primarily indicates the occurrence of an ESD event and can be used to
illustrate that a particular electrostatic-charge-control method has eliminated it. It should not be assumed that every
ESD event detected results in damage to components or equipment problems. Additional testing will be needed to
establish that connection.
R4-5 ESD Event Detectors
R4-5.1 ESD event detectors (EED) are devices that are installed directly on products to detect the presence of an
ESD event. They may be attached in proximity to an ESD-sensitive component, connected to the external device
leads, or integrated into the device package. Typically they detect the current pulse of an ESD event through an
antenna or direct connection to the device circuitry.
R4-5.2 EEDs can be useful in determining the occurrence of ESD events in operating production equipment. The
EED has the ability to indicate ESD events of a known level, aiding in the design and performance verification of
automated equipment. While costly analysis of failed devices can also provide this information, correlation to
equipment operations is usually difficult. An EED that can be monitored optically as it passes through operating
equipment provides a convenient method to verify that automated equipment is not generating levels of electrostatic
charge that result in ESD damage.
R4-6 Types of EED Devices
R4-6.1 In some EED devices, the signal is amplified and processed to produce a reflectance change in the built-in
liquid crystal display (LCD). The EED is designed to trip at a predetermined threshold voltage, detecting ESD
transients above the selected amplitude. Some devices can be reset magnetically or optically making them reusable.
R4-6.2 Other devices use the controllable ESD-damage threshold of metal-oxide-semiconductor field-effect
transistors (MOSFETs). The test methodology is to amplify an ESD transient to create sufficient energy to destroy
the gate oxide. The device may be used until the specified ESD level is achieved, and then the EED fails. A similar
device is based on the metal-oxide-semiconductor capacitor (MOSCAP). The current leakage through the device
significantly increases if the ESD amplitude is sufficient to damage the MOS structure. Both of these types of EED
are removed from where they are installed and require additional instrumentation to determine their status.
R4-6.3 Another type of EED employs the magnetic fields from a current flow to affect a series of magneto-optic
thin films. The magnetic field from the ESD current alters the film’s magnetic state and affects the degree of
polarization of visible light reflected from the film. Varying the distance between the film and the ESD currentcarrying conductor indicates different thresholds. This EED can be read using a microscope equipped with a
polarizing element and does not need to be removed from the circuitry to be read. It can be reset with a magnet. 16
Fujie, A., “Pinpointing Sources of Static Electricity with EMI Locator,” Parts 1 and 2, Nikkei Electronics Asia, December 1992 and January
1993, Nikkei Business Publications Asia Ltd., 533 Hennessy Road, Causeway Bay, Hong Kong.
16
Jackson, Tan, and Boehm, “Magneto Optical Static Event Detector,” 1998 EOS/ESD Symposium, pp.233-244, ESD Association.
15
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R4-7 Conclusion
R4-7.1 There is little question that electrostatic-charge problems continue to result in significant losses in hightechnology manufacturing. Increasingly, electrostatic-charge-control methods are applied in the equipment that
produces the product. It will be important to develop and utilize a range of diagnostic methods and measurement
equipment for ESD in equipment.
REVISION RECORD
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Cycle
Authorization
1108
Ballot 4241
Entire
Document
Section
Complete rewrite:
Title — Change of the document title from: “Guide For Measuring Static Charge On
Objects And Surfaces” to “Recommended Practice for Electrostatic Measurements on
Objects and Surfaces.”
Purpose — Change of the purpose of the document from: “to establish a guide for
reproducible measurement of electrostatic charge(s)” to “to establish a guide for
reproducible electrostatic measurements.”
Scope — The scope of the document was broadened by including voltage, field
level(s) and electrostatic discharge measurements (¶2.1). The applicability of the
standard was identified as ‘semiconductor manufacturing environments.”
Limitations — Minor revisions to ¶ 3.1, 3.2 and ¶ 3.3.
Terminology — Definition of “Ground” moved from ¶5.3 to ¶5.2.
Safety Precautions — The title of the paragraph changed, updates to ¶¶ 6.1–6.3.
Equipment — Major changes: definitions of the equipment, removed performance
verification and zeroing procedures descriptions - those were moved to § 9 Test and
Measurement. Table 1, Test Voltages, was also moved to § 9.
Sufficient Number of Measurements — Title of the section changed from
“Sampling.” The section was updated with more precise recommendations.
Test Methods and Measurements — Significant updates to all paragraphs. Table 2,
Measurement Units, was removed as it is no longer relevant. A new paragraph, ¶ 9.4
Electrostatic Discharge Measurements, was added.
Certification — Updates to all paragraphs in this section.
Documentation — Updates to ¶ 11.1. New Figure 2.
Related Documents — Updates to reflect recent changes and revisions to the
referenced documents.
Appendix 1, Measurement Selection Matrix — Numerous changes to ¶ A1.1. Table
A1-1 Measurement Method Recommendations replaced by two separate tables: Table
A1-1 Recommended Instruments for Electric Charge Measurements, and Table A1-2
Recommended Instruments for ESD Event Measurements.
Related Information 1, Notes on Equipment — Minor updates to all paragraphs.
Description
0213
Ballot 5472
1.0
Title — Change of the Document title from: “Recommended Practice for
Electrostatic Measurements on Objects and Surfaces.” to “Guide for Electrostatic
Measurements on Objects and Surfaces”.
0213
Ballot 5472
5.1
Added new acronyms and used them throughout the Document
0213
Ballot 5472
7.4, 9.4
Added information on the high-impedance contacting digital voltmeter (HIDVM)
0213
Ballot 5472
12.3
Added ESD Association Symposium proceedings
0213
Ballot 5472
Appendix
A1
Added HIDVM to Table A1-1
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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Ballot 5472
Related
Information
R1-3
Added procedure to determine the effect of the HIDVM on the accuracy of
measurements.
NOTICE: SEMI makes no warranties or representations as to the suitability of the standard(s) set forth herein for
any particular application. The determination of the suitability of the standard(s) is solely the responsibility of the
user. Users are cautioned to refer to manufacturer’s instructions, product labels, product data sheets, and other
relevant literature respecting any materials or equipment mentioned herein. These standards are subject to change
without notice.
By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights are entirely their own responsibility.
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DRAFT
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DRAFT
SEMI Draft Document 5472
REVISION OF SEMI E43-1108,
RECOMMENDED PRACTICE FOR ELECTROSTATIC MEASUREMENTS
ON OBJECTS AND SURFACES with title change to: GUIDE FOR
ELECTROSTATIC MEASUREMENTS ON OBJECTS AND SURFACES
1 Purpose
1.1 The purpose is to provide guidance for reproducible electrostatic measurements on any surface or object,
consistent with the scope and limitations set forth below.
2 Scope
2.1 The measurement methods described herein can be applied to characterize the general electrostatic charge,
voltage, field level(s), and electrostatic discharge (ESD) on objects and surfaces in semiconductor manufacturing
environments. Acceptable equipment, calibration, and measurement techniques are described in this Document.
Appendices include background information on the equipment specified and calibration procedures, as well as
information and advice on performing a useful general electrostatic survey.
NOTICE: SEMI Standards and Safety Guidelines do not purport to address all safety issues associated with their
use. It is the responsibility of the users of the Documents to establish appropriate safety and health practices, and
determine the applicability of regulatory or other limitations prior to use.
3 Limitations
3.1 Direct measurement of charge requires the use of a Coulomb meter. Charges on an isolated conductor can be
measured by transferring the charge into the Coulomb meter by contacting the isolated conductor with the Coulomb
meter input probe. Charges on isolated conductors and insulators can be measured by transferring the charged object
into a Faraday enclosure that is connected to the Coulomb meter. These measurements can be relatively precise if
care is taken in the transfer process to avoid changing the charge level when making the measurements.
3.2 Direct measurement of charge is often impractical, due to the object size or difficulties in moving the charged
object from its location to the Faraday enclosure. In these instances, charge is indirectly evaluated by measurement
of the electrostatic field or the electrostatic potential of a charged surface using an electrostatic fieldmeter,
electrostatic voltmeter, electrometer in the voltage-measurement mode, or a high-impedance contacting digital
voltmeter (HIDVM).
3.3 This Document does not describe equipment and techniques capable of making highly precise measurement of
electrostatic charge. No methods of preconditioning the surface prior to measurements and no methods of characterizing the basic electrostatic performance of materials, such as tribocharging, resistance/resistivity, and decay rate are
a part of this Document. Measurements made using this Document on the same surface or object may differ due to
differences in the environment or history of the surface or object between the times any two measurements are made.
4 Referenced Standards and Documents
4.1 SEMI Standards
SEMI E33 — Guide for Semiconductor Manufacturing Equipment Electromagnetic Compatibility (EMC)
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.
5 Terminology
5.1 Acronyms
5.1.1 ANSI — American National Standards Institute
5.1.2 AHE — automated handling equipment
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5.1.3 CDM — charged device model
5.1.4 DC — direct current
5.1.5 EED — ESD event detector
5.1.6 EMC — electromagnetic compatibility
5.1.7 EMI — electromagnetic interference
5.1.8 ESD — electrostatic discharge
5.1.9 ESVM — electrostatic voltmeter
5.1.10 HBM — human body model
5.1.11 HIDVM — high-impedance contacting digital voltmeter
5.1.12 IC — integrated circuit
5.1.13 IEC — International Electrotechnical Commission
5.1.14 iNARTE — International Association for Radio, Telecommunications, and Electromagnetics
5.1.15 JEDEC — Joint Electron Devices Engineering Council
5.1.16 LSR — low series resistance
5.1.17 MIL-STD — United States Military Standard
5.1.18 MM — machine model
5.1.19 SI — International System of Units
5.2 Definitions
5.2.1 electromagnetic compatibility (EMC) — the ability of electronic equipment to function properly with respect
to environmental electromagnetic interference (EMI). [SEMI E33]
5.2.2 electromagnetic interference (EMI) — the degradation of the performance of an equipment, transmission
channel, or system caused by an electromagnetic disturbance. [SEMI E33]
5.2.3 electrostatic discharge (ESD) — the rapid spontaneous transfer of electrostatic charge induced by a high
electrostatic field. [SEMI E78]
NOTE 1: ESD may also be referred to as an ‘ESD event’.
5.2.4 grounded — connected to earth or some other conducting body that serves in the place of earth.
5.2.5 ground — a conducting connection between an object, electrical equipment, and earth, such as the portion of
an electrical circuit of the same electrical potential as earth.
6 Safety Precautions
6.1 Measurements of Very High Electrostatic Potentials (>30,000 V)
6.1.1 Measurements of very high electrostatic potentials (>30,000 V) may need to be done at larger distances than
the commonly used 2.54 cm (1 inch) or less to avoid exceeding the measurement range of the meter and/or an ESD
event to the meter.
6.2 Measurements on Moving Objects or Surfaces
6.2.1 Care should be taken, when attempting to read electrostatic charges on moving objects or surfaces, to maintain
correct distance and avoid any contact; this is to assure ‘good’ readings with no mechanical damage or personal
injury.
6.3 Measurements Using Electrostatic Voltmeters
6.3.1 Avoid touching electrostatic voltmeter probes during operation as their surfaces may be at elevated potentials
that represent a shock hazard to the operator.
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7 Equipment
7.1 Electrometer (Direct Measurement of Electric Charge or Voltage)
7.1.1 An electrometer is an electrical instrument for measuring electric charge, electric current, and/or electrical
potential difference (i.e., voltage). Measurements of electric current with an electrometer are not discussed in this
Document. An electrometer that measures electric charge only is called a Coulomb meter.
7.1.2 One of the typical features of an electrometer used in the charge or the voltage measurement mode is very
high input impedance. That high impedance is needed to prevent or to minimize the transfer of electric charges
between the measured object and electrometer. Ideally, the input impedance would be infinite. In practice, it is
limited by intrinsic, physical material properties of insulators and by stray leakage paths between the input terminals.
Low-voltage electrometers (below 200 V) have typical input resistances of 10 14 Ω or higher and accuracies better
than 0.1%. In the voltmeter mode, an electrometer can resolve microvolt potentials. High-voltage electrometers
(kilovolts range) usually rely on resistive voltage dividers and have typical input resistances in the 10 11 Ω range with
accuracies in the 1% range. It is important to evaluate and understand the burden that the input impedance of an
electrometer represents when measuring charge or voltage on charged objects.
7.2 Fieldmeter/Field Sensor
7.2.1 An electrostatic fieldmeter measures the value of the electrostatic field created by an object under test.
Electrostatic fieldmeters are calibrated and recommended for use at a particular distance from the charged object.
Fieldmeters are best suited for making general surveys or audits, for making measurements of surfaces at very high
electric potentials (i.e., charge levels), and for making measurements when long-term stability is not important. They
are not well suited for measurements of surfaces with very low charge levels or when high spatial resolution of the
surface charge is needed. The fieldmeter modifies the electric field that is being measured.
7.2.1.1 The fieldmeter/electrostatic locator/field sensor will henceforth be referred to as ‘fieldmeter’. For
measurements in the presence of air ionization, a chopper-stabilized fieldmeter is required. The fieldmeter is
typically capable of making field measurements at a distance of 2.54 cm (1 inch) or less, from the field source to the
fieldmeter sensor for this Document, as written. However, see § 10.2.4 for fieldmeters that are operated at fixed
distance(s), and adjust values in this Document where applicable. The handheld fieldmeter is practical as an
electrostatic locator only because precise measurements need a fixed distance between the fieldmeter sensor and the
object under test.
7.3 Electrostatic Voltmeter (ESVM)
7.3.1 An ESVM measures an electric potential of an object under test. An ESVM indicates the presence and allows
for calculation of the charge(s) creating the electrostatic field. Under appropriate conditions, ESVMs provide a
better approximation of the charge level as compared to fieldmeters. ESVMs are relatively free of drift and more
environmentally stable as compared to fieldmeters.
7.3.1.1 ESVMs exhibit a high degree of accuracy that is independent of the distance from the object under test.
Thus, they are considered better suited for making more accurate and repeatable measurements as compared to
fieldmeters. The probe can be located very close to a charged surface without arc-over, and, under appropriate
conditions, can resolve a small spatial area on a surface.
7.4 High-Impedance Contacting Digital Voltmeter (HIDVM)
7.4.1 An HIDVM is capable of making direct contact measurements of electrical potentials on small objects under
test (e.g., integrated circuit [IC] pins). An HIDVM should have both a high input resistance and low capacitance (i.e.,
high impedance). This is necessary to avoid removing the charge from the object under test by discharging it
through the input resistance or transferring it to the capacitance of the HIDVM.
7.4.1.1 For the purpose of making voltage measurements on IC pins, or similar-sized objects, the HIDVM should
have an input resistance greater than 1014 Ω and an input capacitance less than 10-2 pF. In any case, testing should be
done with known voltages on the object under test to establish the effect of the measurement instrument.
7.5 Meter Stability
7.5.1 All previously mentioned measurement instruments should be turned on and preconditioned for as long a
warm-up period as recommended by the manufacturer.
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NOTE 2: See Related Information 1 for notes on equipment accuracy and limitations.
7.6 ESD Event Detection
7.6.1 An electrostatic discharge, also commonly referred to as an ESD event, is a source of damage to the devices
and reticles. Measurements of ESD events are the only direct way of assessing the actual ESD exposure. ESD events
can be measured directly or indirectly. Direct measurements are possible by inserting a current probe into the
discharge path and measuring the discharge current. Such measurements, though providing the maximum accuracy,
are largely limited to laboratories as it is impractical to make them in an operating factory. A practical and sensitive
way of identifying ESD events is by detecting a specific electromagnetic field transient that is generated by an ESD
event. Though this method is a qualitative technique that does not offer the precision of the current probe
measurements, it does offer a practical way of assessing ESD exposure in situ.
8 Sufficient Number of Measurements
8.1 The number of independent measurements should be determined by the user. Tests can be repeated to make
them more representative of actual electrostatic charge conditions in the surveyed area. The results may vary due to
environment (e.g., humidity) and workstation setup/conditions. However, any measurement that is outside of userdefined limits or different than a benchmark value should be repeated more than once after performing a zero check
of the measurement equipment. This is to validate previous reading(s) and/or establish range/bounds in the case of
varying results on previous reading(s).
9 Test Methods, Measurements, and Performance Verification Methods
9.1 Coulomb Meter Measurements
9.1.1 Equipment Selection
9.1.1.1 Use a Coulomb meter for direct measurement of charge. A feedback-type Coulomb meter is recommended
for charge measurements for the most complete transfer of charge. Shunt-type Coulomb meters do not completely
transfer charge and are not as straightforward to use as feedback-type Coulomb meters. When using a Faraday
enclosure, the Faraday enclosure should be large enough to hold the objects to be measured. The Faraday enclosure
is used to measure charge on insulating materials as well as on conductors.
9.1.2 Performance Verification of a Coulomb Meter (or an Electrometer Used in the Charge Measurement Mode)
9.1.2.1 Refer to Figure 1.
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Charge
Capacitor
Charging
Source
STEP 1
Disconnect
Charging
Source from
Capacitor
STEP 2
Connect
Coulomb Meter
to Capacitor
Coulomb Meter
STEP 3
Figure 5
Verifying Performance of the Coulomb Meter
9.1.2.2 Reset (zero) the instrument prior to each measurement.
9.1.2.3 Maintain a reference calibration capacitor. It should be a polystyrene or polypropylene 10 nF capacitor (e.g.,
class C0G, low series resistance [LSR]). Measure the value of the capacitor to better than 1%. It is important to
handle the reference calibration capacitor very carefully. Do not touch or hold the capacitor by its body or discharge
it by touching both leads with the fingers. Hold the capacitor by one lead only. Use a clip lead connected between
ground and this lead of the capacitor to maneuver the other lead of the capacitor between the ‘hot’ side of the
charging source and the input terminal of the Coulomb meter.
9.1.2.4 Charge the reference calibration capacitor to 1 V with a charging source (i.e., power supply). Calculate the
amount of charge on the capacitor by multiplying the voltage by the value of the capacitor. Example: 1 V × 10 nF =
10 nC of charge.
9.1.2.5 Disconnect the charging source from the capacitor.
9.1.2.6 Connect the Coulomb meter input probe to the capacitor and discharge the capacitor into the Coulomb meter.
The Coulomb meter should indicate the calculated value.
9.1.3 Measurements
9.1.3.1 Best results are achieved when all surfaces surrounding the measurement area are grounded (to minimize the
effects of stray fields on the measurement) and when a consistent, systematic handling method is used during the
measurement process. The operator should be grounded using a grounded wrist strap.
9.1.3.2 Isolated Conductors — To measure the charge on an isolated conductor, touch the lead from the Coulomb
meter to the isolated conductor.
9.1.3.3 Faraday Enclosure Measurements — Refer to Figure 2. To measure the charge on an object, carefully pick
up the object with an insulated tool and place the charged object into the Faraday enclosure. Special handling
considerations: Be careful not to add or subtract any charge in the process of moving the charged object into the
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Charging
Source
DRAFT
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DRAFT
Faraday enclosure. Don’t let the charged object rub or slide against any other surface, as this may add or subtract
charge from the object.
Place object into
Faraday
enclosure.
Coulomb Meter
Faraday Enclosure
Figure 6
Measurement with a Coulomb Meter and Faraday Enclosure
9.1.4 Limitations
9.1.4.1 Do not attempt to measure charges of magnitudes that are below the drift rate of the Coulomb meter.
9.2 Voltage Measurements with Electrometer
9.2.1 Equipment Selection
9.2.1.1 Measuring with an electrometer working in the voltage mode is very similar to measuring with any other
voltmeter or multimeter. The major differences between the ordinary voltmeter and the electrometer are that the
input impedance of the electrometer is orders of magnitude higher, and grounded objects near the measurement
location can affect the reading.
9.2.2 Performance Verification of an Electrometer Used in the Voltage Mode
9.2.2.1 It is good practice to occasionally check the performance of the electrometer by connecting it to a known
voltage source, and comparing its readings with readings taken by another reference voltmeter.
9.2.3 Zeroing an Electrometer Used in the Voltage Mode
9.2.3.1 Except on some older analog models, there are usually no provisions to zero an electrometer. Some
electrometers with analog or digital read-outs do allow offsetting of a reading, as well as relative (i.e., delta)
measurements. However, the electronic zero of the electrometer is usually set by the manufacturer, and should be
part of the normal calibration. It is good practice to occasionally check the zero by shorting the input terminals
together and verifying that the zero reading is within the manufacturer’s specifications.
9.2.4 Measurement
9.2.4.1 Connect the ‘common’ terminal of the electrometer through a test lead to the reference plane or ground.
Connect the ‘hot’ or signal lead to the object or test point of interest. Some electrometer measurements will use a
separate wire or shield connected to the electrical ground or a guard ring. Connect this as recommended by the
manufacturer of the equipment.
9.3 Electrostatic Fieldmeter and ESVM Measurements
9.3.1 Performance Verification of Fieldmeters and ESVMs — Refer to Figure 3.
9.3.1.1 Choosing Test Voltage(s) — Choose one or more test voltage(s) from Table 1, based upon the electrostatic
field/voltage level of concern:
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DRAFT
Table 2 Test Voltages
Field of Concern
Test Voltage
Under 4 kV/m or 100 V/2.5 cm
100 V
Under 40 kV/m or 1 kV/2.5 cm
1 kV
Over 200 kV/m or 5 kV/2.5 cm#1
5 kV
#2 If fieldmeter or ESVM performance verification is needed above 5 kV/2.5
cm, it is left to the user to select values using this table as a guide.
9.3.1.2 Equipment Performance Verification — Charge a conductive, isolated test plate to the desired verification
voltage. Use of a suitable power supply or a charged plate monitor for test purposes is recommended.
9.3.1.3 Assuring Meters and Operator Are Grounded — Assure that the fieldmeter, ESVM, and operator are
grounded. Turn on the meter and zero it as required according to manufacturer’s instructions.
9.3.1.4 Directing or Pointing the Sense Head — Direct or point the sense head of the fieldmeter or ESVM at the
center and parallel to the surface of the plate at a distance at least twice of that recommended by the manufacturer.
Slowly move the sense head toward the surface of the charged plate until a reading equal to the voltage applied to
the plate in ¶ 9.3.1.1 above is displayed by the meter. Measure and record the distance from the sense head to the
surface to the plate. Using the plate voltage from ¶ 9.3.1.1 above and the recorded distance, compute the field
strength for the fieldmeter. See Figure 3.
9.3.1.5 Alternative to ¶ 9.3.1.2 — Take measurements at a specified/fixed distance per manufacturer’s instructions.
Locate the sense head of the fieldmeter or ESVM as in ¶ 9.3.1.4, but, at specified distance; reading displayed (on
meter) should be within 5% of applied voltage to plate.
NOTE 3: ¶ 9.3.1.4 or ¶ 9.3.1.5 should be applicable to most meters. However, in every case, the electrostatic fieldmeter or
ESVM manufacturer's instructions should be read, understood, and followed.
9.3.1.6 Other Desired Test Voltages — Repeat ¶ 9.3.1.4 and ¶ 9.3.1.5 for any other desired test voltages.
9.3.2 Check the zero on the fieldmeter or ESVM as specified by the manufacturer. Usually this is done while the
probe is positioned to view a grounded surface. If the zero of the meter has drifted by more than 5% of the test
voltage for any range contained in Table 1, the meter is not suitable for use for measurements over that range. It may
be suitable for use over other ranges contained in Table 1, using other test voltages. Reverify the meter’s calibration
at the selected test voltage.
9.3.3 Measurements with a Fieldmeter
9.3.3.1 Measurements made to this Document should be taken and reported in units that conform to the customer
specifications. Most common fieldmeters manufactured to date have operating instructions that reflect the user doing
calibration and taking measurements in English units of V/inch or V at a fixed distance in inch(es) and in these cases,
raw data are reported/listed directly. The international community and SEMI Standards program regulations specify
that units shall be in International System of Units (SI) units.
9.3.4 Measurement Limitations
9.3.4.1 Measurements made to this Document are only valid for surfaces that are flat to a radius of 1.5 times the
measurement distance from a point directly below the sensor head. For surfaces that are not flat, measurements
should be made by moving the sensor over the surface such that the specified measurement distance is maintained as
closely as possible. These measurements may only be stated as a range, with rounding as applicable to the meter's
measurement range according to ¶ 9.3.1.1. See Figure 4.
NOTE 4: See Related Information 2 for notes on test methods environment and measurements.
9.3.5 Measurements with an Electrostatic Voltmeter (ESVM)
NOTE 5: See Figure 3.
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A) Connect meter and charged plate directly to the same ground reference.
B) Hold the meter so that the sense head is approximately 2.54 cm away from the
charged plate.
C) The meter reading should be within 5% of the voltage applied to the charged
plate.
D) Assure that both the operator and the meter are properly grounded.
Figure 7
Fieldmeter and ESVM Verification Check
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A) Make sure meter is properly grounded according to manufacturer's
instructions.
B) Scan approximately 2.54 cm along both sides and ends of carrier.
C) Scan approximately 2.54 cm length of carrier and top-center of
wafers with meter.
D) Note high-low values for B) & C).
E) Assure that the operator is properly grounded.
Field emanating from carrier of charge
semiconductor wafers.
Meter
Wafers
Carrier
Ground Plane
Figure 8
Example of a Survey of a Carrier of Semiconductor Wafers
9.3.6 Selecting the ESVM
9.3.6.1 Select an ESVM with a measurement range consistent with the anticipated levels of electrostatic
potentials/charge on the objects to be measured. The selection of too high a measurement range will sacrifice
voltage resolution, while selection of too low a range will cause out-of-range operation (i.e., saturation).
9.3.6.2 To measure moving objects, select an ESVM with a speed of response fast enough to detect the objects
when they are moving past the electrostatic voltmeter probe at the highest anticipated velocity.
9.3.6.3 Select a side- or end-viewing probe for the ESVM as is best suited to view the target object or surface when
the probe is installed in equipment.
9.3.7 Measurements
9.3.7.1 Position the probe in front of the surface to be measured. Best results are obtained when the probe is placed
at the distance recommended by the manufacturer.
9.3.8 Measurement Limitations
9.3.8.1 Voltage levels on isolated conductors can be measured. Insulators do not have a uniform surface charge
distribution. Therefore, it is considered that voltage levels measured on insulators indicate an electrostatic field
strength in a particular area. Under certain conditions, a surface charge on the insulator can be calculated from the
electrostatic potential reading provided by the ESVM.
NOTE 6: SEMI has published an ESD Guide (SEMI AUX021) to complement this Document. Refer to this ESD Guide for
additional information on measurements of charge on insulators.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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9.4 High-Impedance Contacting Digital Voltmeter Measurements (HIDVM)
9.4.1 Equipment Selection
9.4.1.1 Measuring with an HIDVM is very similar to measuring with any other voltmeter or multimeter. The major
difference between an ordinary voltmeter and the HIDVM is that the input resistance of the HIDVM is orders of
magnitude higher and the input capacitance is orders of magnitude lower. This allows the HIDVM to make
measurements of voltages on small objects without altering the actual voltages.
9.4.2 Performance Verification of an HIDVM
9.4.2.1 It is good practice to occasionally check the performance of the HIDVM by connecting it to a known
voltage source, and comparing its readings with readings taken by another reference voltmeter.
9.4.3 Zeroing an HIDVM
9.4.3.1 Depending on the instrument used, the zero level of the HIDVM may be adjustable manually, adjustable
automatically, or there may be no adjustment at all, except during the manufacturer’s normal calibration procedures.
It is good practice to occasionally check the zero by shorting the input terminals together and verifying that the zero
reading is within the manufacturer’s specifications. It may also be part of the normal use procedure to touch the
measuring probe to a ground point to remove any residual charge before contacting the desired measurement
location. Consult manufacturer’s instructions for more information.
9.4.4 Measurement
9.4.4.1 Connect the ‘common’ terminal of the HIDVM through a test lead to the reference plane or ground. Connect
the measurement probe (i.e., ‘hot’ or signal lead) to the object or test point of interest. Some types of HIDVMs
require the measurement probe to contact a ground point before contacting the measurement point. Particularly
when measuring voltages on small objects, hold the probe as steady as possible, as changing the capacitance of the
measurement system may affect the accuracy of measurement.
9.4.5 Measurement Limitations
9.4.5.1 Voltage levels on even small isolated conductors can be measured, but the HIDVM input capacitance and
resistance will affect the accuracy of measurement. Prior to making measurements, a known voltage should be
placed on the object of interest, and compared to the voltage measured by the HIDVM. A correction factor can
thereby be developed for HIDVM measurements made on that particular object’s voltage, if necessary.
NOTE 7: Refer to Related Information R1-3 for an example of a measurement procedure to determine the effect of the HIDVM
probe contact on the voltage of an object.
9.5 Electrostatic Discharge Measurements
9.5.1 Principle of Operation
9.5.1.1 An ESD event generates an electromagnetic field with a specific signature characterized by:
 very short rise time — as short as tens or hundreds of picoseconds,
 very short duration — from a few nanoseconds to several hundred nanoseconds,
 very broad frequency range — up to several gigahertz, and
 often high magnitude.
9.5.1.2 Correlation between the magnitude of ESD events, measurements of electromagnetic field generated by
ESD events, and the verification of the performance of ESD event detectors (EEDs) can be done using the various
industry ESD simulators.
NOTE 8: Refer to § 12.3 for more information concerning the performance verification of EEDs.
9.5.1.3 Such parameters as the distance between the place of discharge and the location of an antenna are a very
important part of characterizing the event.
9.5.2 Measurement Equipment for ESD Events
9.5.2.1 There are several types of equipment available to detect and to measure electromagnetic fields from ESD
events.
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9.5.2.2 High-Speed Storage Oscilloscopes
9.5.2.2.1 A high-speed digital storage oscilloscope equipped with proper antennas provides the most comprehensive
information about waveform and magnitude of electromagnetic signals caused by ESD events. The minimum
requirement for an oscilloscope used for this purpose is a 500 MHz bandwidth. Optimum bandwidth should be equal
to or greater than 1GHz. The sampling rate should be at least five times the bandwidth.
9.5.2.2.2 Equipment with lesser performance specifications would either miss or misinterpret important parameters
of ESD events.
9.5.2.2.3 The use of a high-speed oscilloscope should be accompanied by the use of a proper antenna for receiving
the electromagnetic fields. For time-domain measurements it is important to use an antenna with a flat frequency
response since frequency correction that is common in the frequency domain is not possible for time-domain
measurements. Also, it is important to note that a typical oscilloscope captures only one event (e.g., first or last one,
depending on trigger setting), missing multiple ESD events that are common.
9.5.2.2.4 Spectrum analyzers commonly used in electromagnetic compatibility (EMC) testing and wireless
communication are not practical for detecting electromagnetic signals from ESD events due to their unacceptably
low acquisition speed. Refer to SEMI E33 for more information on EMC.
9.5.2.3 ESD Event Detectors (EED)
9.5.2.3.1 While an oscilloscope provides comprehensive information on the waveform of the ESD event, it may not
be practical for continuous monitoring of ESD occurrences in the process, nor in multipoint measurements due to
limitations of the number of channels. EEDs provide detection and measurements related to the strength of an ESD
event with the ability to perform multipoint measurements and data collection at much lower cost than an
oscilloscope.
9.5.2.3.2 EEDs may range from a simple device with only an indication of the occurrence of an ESD event, to a
more complex device that can measure the strength of each individual ESD event and provide correlation to the
strength of the ESD based on the distance from the location of the ESD and other parameters.
9.5.2.3.3 More advanced EEDs can provide resolution of multiple ESD events and separation between ESD events
and other electromagnetic events with similar properties.
10 Certification
10.1 It is reasonable to expect that the person chosen to survey production areas for electrostatic charge levels has
been certified to perform that task. The certified person should be someone qualified by education and/or training to
calibrate and make measurements with the equipment called out in this Document. The ESD Association conducts
such education programs and certifies individuals as ESD Program Managers. 1 The International Association for
Radio, Telecommunications, and Electromagnetics (iNARTE) administers an ESD Engineer and ESD Technician
certification program.2
11 Documentation
11.1 Meter calibration check(s), benchmark or laboratory measurements, items/areas surveys, and/or any other
electrostatic field measurements should be recorded in permanent records.
11.2 Recorded are initial reading, second/validation reading, and any subsequent readings taken to verify that
acceptable levels are observed.
11.3 Record sheet(s) should include the meter used, area (i.e., name), location, date, environmental information if
available (i.e., temperature, humidity), name of person who took readings, and space for comments.
12 Related Documents
NOTE 9: These documents are for information only. In the case of conflict, this SEMI E43 Document should take precedence.
Also, it is recommended that the user review Appendices in this Document before its use. Unless otherwise indicated, all
documents listed should be the latest published revision.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards commi ttee (document
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12.1 ESD Association Standards 17 Including Those Also Accredited by American National Standards Institute
(ANSI)]and Joint Electron Devices Engineering Council (JEDEC)
12.1.1 ANSI/ESD STM3.1 — Ionization
12.1.1.1 Test methods and procedures for evaluating and selecting air-ionization equipment and systems are
provided in this standard, which establishes measurement techniques to determine ion balance and chargeneutralization time for ionizers.
12.1.2 ANSI/ESD STM4.2 — ESD Protective Worksurfaces-Charge Dissipation Characteristics
12.1.2.1 This standard test method prescribes a procedure for measuring the electrostatic charge dissipation
characteristics or worksurfaces used for ESD control.
12.1.3 ANSI/ESDA/JEDEC JS-001— ANSI/ESDA/JEDEC Joint Standard for Electrostatic Discharge Sensitivity
Testing-Human Body Model (HBM) Component Level
12.1.3.1 This standard test method defines procedures for testing, evaluating, and classifying the ESD sensitivity of
components to the defined human body model (HBM).
12.1.4 ESD DSTM5.2 — Electrostatic Discharge Sensitivity Testing-Machine Model (MM) Component Level
12.1.4.1 This standard established a test procedure for evaluating the ESD sensitivity of components to a defined
machine model (MM), and outlines a system whereby the sensitivity of such components may be classified.
12.1.5 ANSI/ESD S5.3.1 — Charged Device Model (CDM)-Component Level
12.1.5.1 This standard is a test method for evaluating active and passive components’ ESD sensitivity to a defined
charged device model (CDM).
12.1.6 ANSI/ESD S20.20 — Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding
Electrically Initiated Explosive Devices)
12.1.6.1 This standard specifies the requirements for designing, establishing, implementing, and maintaining ESD
control programs for ESD-sensitive items susceptible to discharges equal to or greater than 100 V HBM.
12.1.7 ESD SP10.1 — Automated Handling Equipment (AHE)
12.1.7.1 This document covers test methods for evaluating the ESD ground integrity of automated handling
equipment as well as charge generation and charge accumulation on devices in the AHE.
12.1.8 ANSI/ESD S541 — Packaging Materials for ESD Sensitive Items
12.1.8.1 This standard presents requirements and tests methods for selecting packaging materials to be used with
ESD sensitive devices.
12.2 ESD Association Advisory Documents
12.2.1 ESD ADV1.0 — Glossary of Terms
12.2.1.1 Definitions and explanations of various terms used in ESD Association standards and documents are
covered in this advisory. It also includes other terms commonly used in the ESD industry.
12.2.2 ESD TR20.20 — ESD Handbook
12.2.2.1 The ESD Handbook is a complete guide to electrostatic control in the work place. Nineteen chapters cover
ESD basics, control procedures, auditing, symbols, device testing, and standards.
12.2.3 ESD ADV11.2 — Triboelectric Charge Accumulation Testing
12.2.3.1 The complex phenomenon of triboelectric charging is discussed in this Advisory. It covers the theory and
effects of tribocharging. It reviews procedures and problems associated with various test methods that are often used
to evaluate triboelectrification characteristics.
17
ESD Association, 7900 Turin Rd., Bldg. 3, Rome, NY 13440-2069; http://www.esda.org
2 International Association of Radio, Telecommunications, and Electromagnetics (iNARTE), 840 Queen Street, New Bern, NC 28560;
http://www.narte.org
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12.3 ESD Association Symposium Proceedings
12.3.1 Proceedings of the EOS/ESD Symposium, 2005, 2012
12.3.1.1 These proceedings contain papers authored by T. Maloney of Intel that describe methods for the use and
calibration of ESD event detectors (EEDs).
12.4 Other Related Documents
12.4.1 United States Military Standards18
12.4.1.1 MIL-STD-1686C — ESD Control Program for Protection of Electrical and Electronic Parts, Assemblies
and Equipment (Excluding Electrically Initiated Explosive Devices)
12.4.1.1.1 This military standard establishes requirements for ESD control programs. It applies to United States
military agencies, contractors, subcontractors, suppliers, and vendors. It requires the establishment, implementation,
and documentation of ESD control programs for electrostatic-sensitive devices, but does not mandate or preclude
the use of any specific ESD control materials, products, or procedures. This standard has not been officially
withdrawn although it has been superseded by ANSI/ESD S20.20 (see ¶ 12.1.6).
12.4.1.2 MIL-HDBK-263B — ESD Control Handbook for Protection of Electrical and Electronic Parts, Assemblies
and Equipment (excluding Electrically Initiated Explosive Devices)
12.4.1.2.1 This reference provides guidance, but not mandatory requirements, for the establishment and
implementation of an ESD control program in accordance with the requirements of MIL-STD-1686C.
12.4.2 JEDEC Standards19
12.4.2.1 JESD625A — Requirements for Handling ESD-Sensitive Devices
12.4.2.1.1 This voluntary standard establishes minimum requirements for ESD control methods and materials
designed to protect electronic devices having human body model (HBM) sensitivities of 200 V or greater. It is
intended for use by semiconductor distributors, semiconductor processing and testing facilities, and semiconductor
end users.
12.4.3 International Electrotechnical Commission (IEC) Standards20
12.4.3.1 IEC 61000-4-2 — Electromagnetic compatibility (EMC) – Part 4-2: Testing and measurement techniques –
Electrostatic discharge immunity test
12.4.3.1.1 This IEC document provides requirements and test methods for ESD transient immunity.
12.4.3.2 IEC 61340-5-1 — Electrostatics – Part 5-1: Protection of electronic devices from electrostatic phenomena
– General requirements
12.4.3.2.1 This IEC (International Electrotechnical Commission) document provides guidance for establishing an
electrostatic-charge-control program.
12.4.3.3 IEC/TR 61340-5-2 Electrostatics — Part 5-2: Protection of electronic devices from electrostatic
phenomena – User Guide
12.4.3.3.1 This IEC handbook supplements the information contained in Part 5-1 above.
18
Defense Supply Center Columbus, P.O. Box 3990, Columbus, OH 43216-5000, USA. http://www.dscc.dla.mil
JEDEC Solid State Technology Association (aka the Joint Electron Device Engineering Council), 2500 Wilson Boulevard, Arlington, VA
22201-3834, USA. Telephone: 703.907.7560; Fax: 703.907.7583; http://www.jedec.org
20
International Electrotechnical Commission, 3 rue de Varembé, Case Postale 131, CH-1211 Geneva 20, Switzerland. Telephone:
41.22.919.02.11; Fax: 41.22.919.03.00; http://www.iec.ch
19
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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APPENDIX 1
MEASUREMENT SELECTION MATRIX
NOTICE: This Appendix offers information related to selecting the appropriate measurement methods from those
contained in this document. The material in this Appendix is an official part of SEMI E43 and was approved by full
letter ballot procedures on XXXXXXXXX.
A1-1 Selection of an Appropriate Electrostatic Measurement Method
A1-1.1 Tables A1-1 and A1-2 are intended to assist in the selection of appropriate equipment for making
electrostatic measurements. Users should note that a variety of measurement methods is available for any given
situation. Consult manufacturers of the equipment for additional information concerning its proper use and
applicability.
A1-1.2 Some equipment are used for making measurements of electric charge, voltage, or field indirectly. This
means that the desired property can be calculated from the measurement of another physical quantity. For example,
electric charge deposited on an object can be calculated from electrostatic field or electrostatic voltage (i.e.,
potential) associated with that object.
Table A1-1 Recommended Equipment Types for Electrostatic Measurements
Instrument
Object and
Quantity
Measured
Coulomb Meter Coulomb Meter
HighFieldmeter Electrostatic Electrometer Oscilloscope
(direct contact
with the
Impedance
Voltmeter
(voltage
with the
Faraday Cup Contacting
(ESVM) measurement
measurement
Digital
mode)
electrode)
Voltmeter
(HIDVM)
Surface charge Yes (for
on large
conductors)
surfaces
Yes, for objects Yes,
limited by the indirectly
size of the
Faraday Cup
Surface charge Yes (for
on small
conductors)
objects and
devices
(stationary
measurement)
Yes
Surface charge No
on device/unit
in process
(moving parts)
No (not with a
stationary
Faraday Cup)
Yes,
indirectly
EMI
Detector
and ESD
Event
Detector
(EED)
Yes,
indirectly
Yes,
indirectly
No
No
Yes,
indirectly
No
Yes,
(method is indirectly
not
accurate
enough)
Yes,
indirectly
No
No
Yes,
indirectly
Yes,
Yes,
indirectly, indirectly
but size of
the
measured
object and
presence
of stray
electric
fields
influence
accuracy
Yes,
indirectly
No
No
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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Instrument
Object and
Quantity
Measured
Coulomb Meter Coulomb Meter
HighFieldmeter Electrostatic Electrometer Oscilloscope
(direct contact
with the
Impedance
Voltmeter
(voltage
with the
Faraday Cup Contacting
(ESVM) measurement
measurement
Digital
mode)
electrode)
Voltmeter
(HIDVM)
EMI
Detector
and ESD
Event
Detector
(EED)
Surface charge Yes (for
on process
conductors)
equipment
No
Yes,
indirectly
Yes,
Yes,
indirectly, indirectly
but size of
the
measured
object and
presence
of stray
electric
fields
influence
accuracy
Yes,
indirectly
No
Voltage
measurements
on isolated
conductors
Yes, if object
capacitance is
known
Yes
Yes, but
Yes,
measuring indirectly
distance,
size of the
measured
object,
and
presence
of stray
electric
fields
influence
accuracy
Yes
Yes, but
No
input
impedance
will affect
the accuracy
of
measurement
Yes, if object
capacitance is
known
No
Table A1-2 Recommended Instruments for ESD Event Measurement
Instrument
Object and
Quantity
Measured
Coulomb Meter Coulomb Meter
HighFieldmeter Electrostatic Electrometer Oscilloscope
(direct contact
with the
Impedance
Voltmeter
(voltage
with the
Faraday Cup Contacting
measurement
(ESVM)
measurement
Digital
mode)
electrode)
Voltmeter
(HIDVM)
EMI
Detector
and ESD
Event
Detector
(EED)
ESD event
detection and
measurement
in facility
No
No
No
No
No
No
Yes
Yes
ESD event
detection and
measurement
in process
equipment
No
No
No
No
No
No
Yes
Yes
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RELATED INFORMATION 1
NOTES ON EQUIPMENT
NOTICE: This Related Information is not an official part of SEMI E43-XXXX and was derived from the work of the global
Metrics Technical Committee. This Related Information was approved for publication by letter ballot procedures on
XXXXXXXX.
NOTE 1: This Related Information contains relevant information for using SEMI E43 in situations commonly encountered with
semiconductor manufacturing facilities and equipment. Determination of the suitability of the material is solely the responsibility
of the user.
R1-1 Use of a Charged Plate Monitor
R1-1.1 A charged plate monitor is an instrument typically used to monitor the performance of air ionization
equipment. Monitoring is done with an electrically isolated 15 cm × 15 cm (6 inches × 6 inches) metal plate,
henceforth referred to as ‘the plate’. The instrument typically provides a means to charge the plate to a known
voltage (e.g., 1000 or 5000 V of either polarity), a plate sensor to determine the voltage on the plate, and timing
circuitry to determine the time required to discharge the plate to a percentage of its initial charge. For the purposes
of this Document, the charged plate monitor, or a separate isolated plate assembly, can be used for performance
verification purposes as explained in § 9.
R1-1.2 A charged conductive plate establishes a uniform electrostatic field as long as measurements are not made
close to the edges and the measurement distance is small relative to the dimensions of the plate. This Document
recommends meters capable of making field measurements at a distance of 2.54 cm (1 inch) or less from a 15 cm (6
inch) square plate as a practical means to ensure performance verification to a known field.
R1-1.3 Charged plate monitors using 15 cm square plates with a 20 pF capacitance are commonly used to determine
the performance of air ionization systems. Isolators are used to assure minimal leakage to ground. A 15 cm square
plate of any metal approximately 1 mm thick and isolated from adjacent surfaces using insulative standoffs is a
perfectly acceptable substitute.
R1-2 The Verification Procedure
R1-2.1 The verification procedure is intended to ensure that the meter used does not drift excessively (less than 5%
in 300 s [5 minutes]) and can repeatedly measure a known field to within 5%. When actually using the meter to do a
field survey, maintaining the correct distance from the sensor head to the surface or object being measured becomes
the greatest source of error. If the ability of the meter operator to maintain the correct distance is within 10%, then
the total error of the measurement would be within about 12% using this calibration procedure (root mean square
[RMS] of the 5% drift, 5% repeatability, and 10% distance errors).
R1-2.2 If two operators using two different meters follow the verification procedure, and they both are able to
maintain the correct distance to within 10% as above, then they both would be within 12% of the true field strength
when measuring the same surface or object. Taking the RMS of these errors, the two operators using two meters
should be within 17% of each other.
R1-2.3 Many meters read out in V/inch, therefore 100 V/inch is about 4,000 V/m.
R1-3 Use of the High-Impedance Contacting Digital Voltmeter (HIDVM)
R1-3.1 The HIDVM is used to measure the voltage resulting from the charge on conductive objects. To provide
accurate measurements, both high resistance and low capacitance are required. The following is an example of a test
procedure to measure IC pin voltages. This procedure will give an indication of the effect of the HIDVM on the
known pin voltage. It will be possible to use this information to determine a correct factor for measurements made
on similar small objects. This same procedure may be performed on any object under consideration for HIDVM
measurements.
R1-3.2 Equipment Required For IC Pin Voltage Measurements
R1-3.2.1 High-Voltage DC Current-Limited Power Supply — Capable of adjustable voltage output up to 1000 V
minimum. For safe operation of the power supply, refer to the manufacturer’s equipment manual. Connect a 100
MΩ resistor between the positive lead of the power supply and the device under test (DUT) being charged.
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R1-3.2.2 HIDVM — With ±1000 V full scale (minimum), ±5% accuracy, 1014 Ω minimum input resistance, and 0.1
pF maximum input capacitance.
R1-3.2.3 Ionizing Blower — Used to discharge the DUT and test fixture before every measurement. Ionizer balance
should be better than ±10 V.
R1-3.2.4 Test Fixture — To hold the DUT approximately 2.54 cm (1 inch) from a ground reference plate.
R1-3.3 Test Method Details for IC Pin Voltage Measurements
R1-3.3.1 Clean the DUT with isopropyl alcohol (IPA) before testing. Handle DUT with either a clean wipe or
tweezers at all times after cleaning.
R1-3.3.2 Attach the DUT to the test fixture.
R1-3.3.3 Attach the ground lead from the power supply to the ground plate of the test fixture. Connect the ground
lead from the HIDVM to the same point.
R1-3.3.4 Use the ionizer to discharge the test fixture and DUT before testing at each voltage level.
R1-3.3.5 Select a voltage level on the power supply and use the positive test lead from the power supply to briefly
contact several pins of the DUT.
R1-3.3.6 Immediately thereafter, use the test probe of the HIDVM to measure the voltage on the DUT pins.
R1-3.3.6.1 Hold test probe on the DUT pins only long enough to record the voltage. Remove it for 10 s, and then
measure the voltage quickly again. This remeasurement will give an indication of the amount of self-discharge of
the DUT. If the DUT discharges more than 10% in 10 s, clean the DUT again and make sure it is thoroughly dry
before repeating the measurement.
R1-3.3.6.2 In a second test, charge the DUT pins again as in R1-3.3.5 and then hold the probe on the DUT pins for
the entire 10 s, to determine how much discharge is caused by the HIDVM probe on the DUT pins.
R1-3.3.6.3 Use the data from steps R1-3.3.6.1 and R1-3.3.6.2 to determine whether a modification should be made
in the HIDVM voltage readings. For example, in high humidity the self-discharge may be greater than 10% in 10 s.
Alternatively, the actual input resistance and capacitance of the HIDVM probe may cause a significant drop in the
measured voltage after 10 s. This change will indicate that a correction of the actual voltage measured may be
needed based on the approximate measurement time.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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RELATED INFORMATION 2
NOTES ON TEST METHODS
NOTICE: This Related Information is not an official part of SEMI E43-XXXX and was derived from the work of the global
Metrics Technical Committee. This Related Information was approved for publication by letter ballot procedures on
XXXXXXXX..
NOTE 1: This Related Information contains relevant information for using SEMI E43 in situations commonly encountered with
semiconductor manufacturing facilities and equipment. Determination of the suitability of the material is solely the responsibility
of the user.
R2-1 Prior handling and environmental conditions will significantly impact the field strength to be measured.
Below are some examples of these considerations.
 The presence of a nearby conductive grounded surface or object will tend to reduce the measured field strength.
This phenomenon is known as field suppression and is illustrated in Figure R2-1.
 Ionization of the surrounding air will tend to reduce the measured field strength by neutralizing the electrostatic
charge on the surface of the object.
 Rubbing or contacting the surface being measured with another object or surface will tend to increase the
measured field strength depending upon the tendency of the two materials in question to tribocharge.
 Increasing humidity will tend to reduce the field strength to be measured because it in turn will reduce the
magnitude of the charge generated on objects and, over time, assist in the neutralization of charge on objects.
 Projections and sharp protrusions on the object being measured, or nearby objects, will increase the field
strength.
 Insulating objects may have very irregular charge distributions.
R2-2 As a result of these considerations, an electrostatic measurement or survey made using this Document is only
useful if these factors are taken into account in a realistic manner. Below are some examples.
 If a surface is only used in a humidity- or temperature-controlled environment, field strength measurements
made under these conditions are the main ones of interest. Measurements made at different humidities or
temperatures may be irrelevant.
 An object may present close to zero field strength in an ionized environment, yet when contacted by another
object may become highly charged. This charge may persist for a period of seconds or minutes while it is
neutralized by the ionized environment. The time required to return the object to its original state may be a
parameter of interest.
 An object resting on a grounded metal surface may have a very low external field strength. If the object is
picked up and measured, the field strength may be much higher.
 Objects of irregular shape and size will give highly variable readings, depending on the position of the sensor
relative to the object.
 Dielectric objects may give highly variable readings, depending upon the position of the sensor relative to the
charge distribution on the object.
 The simple act of handling an object while performing an electrostatic survey can change the electrostatic
charge on the object. The best results will derive from making sure that objects and surfaces are treated and
handled within the bounds of their actual use.
 During equipment verification, maintaining constant/steady voltage is important. If the plate of the charged
plate monitor is initially charged and allowed to float, its voltage will change as the meter is moved close to it.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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Field Lines Due to Static Charge
+ + + + + + + + + + + + + + + + +
Charged Surface
Field Lines Terminate on Ground
and Do Not Accurately
Represent Charge on the Surface
+ + + + + + + + + + + + +
Grounded Surface
Figure R1-2
Field Suppression
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RELATED INFORMATION 3
ESD DAMAGE SIMULATORS
NOTICE: This Related Information is not an official part of SEMI E43-XXXX and was derived from the work of the global
Metrics Technical Committee. This Related Information was approved for publication by letter ballot procedures on
XXXXXXXX.
NOTE 1: This Related Information contains relevant information for using SEMI E43 in situations commonly encountered with
semiconductor manufacturing facilities and equipment. Determination of the suitability of the material is solely the responsibility
of the user.
R3-1 ESD Damage Simulators
R3-1.1 ESD simulators are used to replicate ESD events. Common types used to characterize semiconductor
devices and equipment include those listed below.
 Component-level HBM ESD Simulator
 Component-level MM ESD Simulator
 Component-level CDM ESD Simulator
 System-level HBM/metal ESD Simulator
R3-1.2 The component-level human body model (HBM) ESD simulator represents the parameters agreed upon for
a standard, which represents the discharge from a typical human body. These parameters are 1500 Ω and 100 pF for
the representative resistance and capacitance respectively of the human body.
R3-1.3 The component-level machine model (MM) ESD simulator represents the parameters agreed upon for a
standard, which represents the discharge from a charged metallic part of an equipment (e.g., automatic handler).
These parameters are 200 pF and zero resistance for the representative capacitance and DC resistance respectively of
the equipment part. We note here that the resulting waveform is highly dependent on the impedance of the
measurement circuitry.
R3-1.4 The component-level charged device model (CDM) ESD simulator represents the parameters agreed upon
for a standard, which represents the discharge from a charged device. These parameters are defined by the resulting
waveform and depend almost exclusively on the capacitance, resistance, and inductance of each device relative to
ground. These parameters should not be confused with the measurement equipment parameters, which also affect
the resulting waveform.
R3-1.5 The system-level HBM/metal ESD simulator represents the parameters agreed upon for a standard, which
represents the discharge from a human holding a metallic instrument. These parameters are the lower resistance
350 Ω and 150 pF for the representative resistance and capacitance respectively of the human holding a metallic
instrument. Note here that the waveform is greatly affected by the measurement equipment parasitics.
NOTE 2: The above component-level ESD simulators have also been used in simulating ESD damage to tooling, such as reticles.
This simulation is left to user discretion.
R3-2 Summary of Procedures
R3-2.1 Component-level HBM ESD Simulator — The procedure for using this simulator to stress test devices or
wafers is based upon the standard requirements. ANSI and the ESD Association approved the HBM standard,
ANSI/ESD STM5.1, which contains a specific device pin combination sequence for stress testing. 1 This test
procedure is generally referred to as a ‘Pin-to-Ground’ test since one pin is always grounded while the selected
second pin is stressed. Calibration before use requires added equipment components like a current probe, high-bandpass cable, a short wire, a 500 Ω resistor, and a very high-bandwidth waveform recorder/digitizer. A similar test
method is available from JEDEC in JESD22-A114.2
R3-2.2 Component-level MM ESD Simulator — The procedure for using this simulator to stress test devices or
wafers is based upon the standard requirements. The ANSI/ESD STM5.2-1999 approved MM standard specifies a
specific device pin combination sequence for stress testing. 1 This test procedure is also generally referred to as a
‘Pin-to-Ground’ test since one pin is always grounded while the selected second pin is stressed. This procedure is
exactly the same as for HBM. Calibration before use requires added equipment components like a current probe,
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high-band-pass cable, short wire, a 500 Ω resistor, and a very high-bandwidth waveform recorder/digitizer. A
similar test method is available from JEDEC in JESD22-A115.2
R3-2.3 Component-level CDM ESD Simulator — The procedure for using this simulator to stress test devices or
wafers is based upon the standard requirements. The ANSI/ESD STM5.3.1-1999 approved CDM standard does not
use a pin combination procedure.1 Here the device sits on a charge plate (CP) ‘dead-bug’ style (i.e., package on CP
and leads/pins vertical) and each pin is discharged successively after each charge to the device package. This
procedure is different from that of HBM and MM. Calibration before use requires added equipment components like
a capacitance/inductance calibrator, high band-pass cable, and a very high-bandwidth waveform recorder/digitizer.
A similar test method is available from JEDEC in JESD22-C101.2
R3-2.4 System-level HBM/Metal Simulator — The procedure for using this handheld simulator for testing systems
(e.g., automated test equipment [ATE] testers, automatic handlers, computers, printers, ESD simulators) is based
upon the standard requirements. The IEC 61000-4-2, 1996 (formerly 801-2, 1992) standard uses direct contact or air
discharge to the system under test and is a different procedure from the other three procedures mentioned above.3
Calibration before use requires the use of a very large, vertical ground plane (at least 1.2 m by 1.2 m [4 foot by 4
foot] square), a high bandwidth current probe, cables, and high-bandwidth waveform recorder/digitizer.
R3-3 Industry Classifications
R3-3.1 HBM Classification
 Class 0 — <250 V
 Class 1A — 250 to <500 V
 Class 1B — 500 to <1000 V
 Class 1C — 1000 to <2000 V
 Class 2 — 2000 to <4000 V
 Class 3A — 4000 to <8000 V
 Class 3B — ≥8000 V
R3-3.2 MM Classification
 Class M1 — <100 V
 Class M2 — 100 to <200 V
 Class M3 — 200 to <400 V
 Class M4 — 400 to <800 V
 Class M5 — ≥800 V
R3-3.3 CDM Classification
 Class C1 — <125 V
 Class C2 — 125 to <250 V
 Class C3 — 250 to <500 V
 Class C4 — 500 to <1000 V
 Class C5 —1000 to <2000 V
 Class C6 — ≥2000 V
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards commi ttee (document
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R3-3.4 Handheld Metal HBM Classification
Direct Contact Discharge
Voltage
10.
11.
12.
13.
2,000 V
4,000 V
6,000 V
8,000 V
Current
12.0 A
24.0 A
36.0 A
48.0 A
Air Discharge
Voltage
1.
2.
3.
4.
5.
2,000 V
4,000 V
6,000 V
10,000 V
15,000 V
Current
15.0 A
25.0 A
30.0 A
35.0 A
52.0 A
NOTE 3: Note that the currents for the same voltage level are not the same for contact versus air discharge.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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RELATED INFORMATION 4
OTHER METHODS FOR DETECTING ELECTROSTATIC CHARGE AND
ESD EVENTS IN EQUIPMENT
NOTICE: This Related Information is not an official part of SEMI E43-XXXX and was derived from the work of the global
Metrics Technical Committee. This Related Information was approved for publication by letter ballot procedures on
XXXXXXXX.
NOTE 1: This Related Information contains relevant information for using the standard in situations commonly encountered
with semiconductor manufacturing facilities and equipment. Determination of the suitability of the material is solely the
responsibility of the user.
R4-1 Introduction
R4-1.1 Electrostatic-charge generation is unavoidable whenever materials come in contact. Without an
electrostatic-charge-control program, the problems caused by electrostatic charge are also unavoidable. The most
common problem caused by electrostatic charge is electrostatic discharge (ESD). ESD results in damaged
semiconductor integrated circuits (ICs), photomask defects, magneto-resistive (MR) read head defects in disk drives,
and failures of the drive circuits for flat panel displays (FPDs). ESD also creates a significant amount of
electromagnetic interference (EMI). Often mistaken for software errors, EMI resulting from ESD interrupts the
operation of production equipment. This is particularly true of equipment depending on high-speed microprocessors
for control. Results include unscheduled downtime, increased maintenance requirements, and frequently, product
scrap. Technology trends to smaller device geometries, faster operating speeds, and increased circuit density make
ESD problems worse.21
R4-1.2 For many years electrostatic-charge-control programs concentrated on protecting components from the
electrostatic charge generated on the personnel that handled them. Many electrostatic-charge-control methods were
devised to control the electrostatic charge on people including wrist and heel straps, dissipative shoes and flooring,
and garments. Increasingly, however, the production of electronic components is done by automated equipment, and
personnel never come into contact with the electrostatic-charge-sensitive devices. Solving the ESD problem means
assuring that ESD events do not occur in the equipment used to manufacture and test electronic components.
R4-2 Electrostatic-Charge Control in Equipment
R4-2.1 An effective electrostatic-charge-control program in equipment starts with grounding all materials that
might come close to, or in contact with, the electrostatic-charge-sensitive components. This prevents the generation
of electrostatic charge on equipment components and eliminates them as a source of the electrostatic-charge-creating
ESD events. Care should be taken in a grounding program to assure that moving equipment parts remain grounded
when they are in motion. In some cases, electrostatic-charge-dissipative materials may be substituted for conductive
materials where flexibility, thermal insulation, or other properties not available in conductive materials are needed.
If electrostatic charging of components is unavoidable, electrostatic-charging-dissipative materials may be used to
slow the resulting ESD discharges and prevent component damage.
R4-2.2 Most semiconductors use insulating packaging materials such as ceramics and epoxy. Handling these
insulating materials inevitably generates electrostatic charge, and this charge cannot be removed by grounding the
materials. If electrostatic-charge generation is unavoidable, the only effective method of neutralizing the
electrostatic charge on insulators or isolated conductors is to use air ionization. Ionizers are typically mounted in the
load stations and process chambers of the automated equipment to neutralize the electrostatic charge.
R4-3 Verifying Equipment Electrostatic Charge Control
R4-3.1 An electrostatic-charge-control program begins when the automated equipment is designed by the original
equipment manufacturer (OEM), and then continues throughout the lifetime of the equipment. Two basic issues
need to be demonstrated. First, are all components in the product-handling path connected to ground? Second, as the
product passes through the equipment, is it handled in a way that does not generate electrostatic charge above an
Levit, L. et al., “It’s the Hardware. No, Software. No, It’s ESD!”, Solid State Technology, May 1999, Pennwell Publishing Company, 98 Spit
Brook Road, Nashua NH 03062.
21
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acceptable level on the component? ESD Association Standard Practice EOS/ESD SP 10.1-2000 22 contains test
methods to verify the integrity of the ground path to equipment parts, as well as to determine if the product is being
charged during its passage through the equipment. The test methods are applicable during the original design of the
equipment and during acceptance testing by the end user.
R4-3.2 While the test methods of EOS/ESD SP 10.1-2000 can also be used for periodic verification of the
equipment performance, they have one drawback. The automated equipment should be taken off-line to do the
testing. This means that there is lost production time, and often the periodic testing is eliminated to maintain product
throughput. Other test methods are available that can be performed with the equipment operating online, without
altering or disturbing its operation.
R4-4 ESD and EMI
R4-4.1 When ESD occurs, the discharge time is usually 10 ns or less. Discharging energy in this short time interval
results in the generation of broadband electromagnetic radiation 23, as well as the heat that damages semiconductor
components. This electromagnetic radiation, especially in the 100 MHz to 2 GHz frequency range, is the
electromagnetic interference (EMI) that can affect the operation of production equipment. In addition to ESD
damage to semiconductor devices and reticles, ESD-caused EMI results in a variety of equipment operating
problems including stoppages, software errors, testing and calibration inaccuracies, and mishandling causing
physical component damage.
R4-4.2 EMI Locators — When component damage or equipment problems due to ESD are suspected, it may be
useful to detect the EMI generated by the ESD event. This type of testing is both a starting point for determining that
electrostatic charge has been generated, and it is a measurement point to ascertain that any electrostatic-chargecontrol methods have been successful. EMI locators measure dynamic operating conditions, as it is usually not
necessary to interrupt equipment operations to make measurements.
R4-4.3 Types of EMI Locators — EMI locators are available in a number of different forms. In its simplest form, it
consists of an amplitude modification (AM) radio tuned off station. A popping noise will be heard when an ESD
event occurs. At the most complex it consists of a wideband (i.e., greater than 1 GHz) digital storage oscilloscope
with a set of appropriate antennas, probes, and software. Measurements of radiated interference can be made using
antennas while probes can be connected to equipment parts or electronics and power lines.
R4-4.3.1 An oscilloscope attached to a single antenna can assist in pinpointing the actual location of the ESD
event.8, 24, 25, 26 A set of antennas can be used to not only detect the presence of an ESD event, but to determine the
location of the pulse in three dimensions. 27, 28 Using the same concept as a global positioning system (GPS), the
difference in the arrival times of the signal to multiple antennas is directly related to the difference in the distance of
each antenna from the ESD source. With the time deltas and the locations of the antennas known, the location of the
spark can be uniquely identified employing the appropriate analysis program.
R4-4.3.2 Several other types of EMI-locating equipment are currently in use. Most consist of high-frequency
receiving circuitry followed by level detectors to determine the magnitude of the signal. For the purpose of detecting
EMI from ESD events, the equipment should have some way of differentiating the short impulse of EMI from the
ESD event from the continuous high-frequency radiation of other EMI sources. Some instruments contain a counter
to total the number of ESD events above the threshold, or alarms to indicate when the number of ESD events
exceeds a preset number. This type of instrument can be placed near the equipment that is suspected of causing ESD
events and left in place to monitor.
EOS/ESD SP10.1 - 2000 “Automated Handling Equipment (AHA)”, ESD Association, 700 Turin Road, Rome NY 13440.
Tonoya, Watanabe and Honda, “Impulsive EMI Effects from ESD on Raised Floor,” 1994 EOS/ESD Symposium, pp. 164-169, ESD
Association.
24
Takai, Kaneko and Honda, “One of the Methods of Observing ESD Around Electronic Equipments,” 1996 EOS/ESD Symposium, pp. 186192, ESD Association.
25
Greason, Bulach and Flatley, “Non-Invasive Detection and Characterization of ESD Induced Phenomena in Electronic Systems,” 1996
EOS/ESD Symposium, pp. 193-202, ESD Association.
26
Smith, “A New Type of Furniture ESD and Its Implications,” 1993 EOS/ESD Symposium, pp. 3-7, ESD Association.
27
Bernier, Croft, and Lowther “ESD Sources Pinpointed by Analysis of Radio Wave Emissions,” Journal of Electrostatics (44) pp. 149-157,
Nov. 1998, Elsevier Science B.V., P.O. Box 211, 1000 AE Amsterdam Netherlands.
28
Lin, DeChiaro and Jon, “A Robust ESD Event Locator System with Event Characterization,” 1997 EOS/ESD Symposium, pp. 88-98, ESD
Association.
22
23
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R4-4.3.3 Several EMI locators are battery-operated, handheld devices that can be easily carried around a facility or
placed directly in equipment to check for ESD events. This allows the EMI locator to detect signals that might
otherwise be shielded by the equipment’s cover panels. Note that EMI shielding is usually an important part of the
design of most production equipment to prevent radiation from the equipment. This makes the detection of ESD
events outside the equipment more difficult. It allows pinpointing of the location of an ESD event, which can then
be correlated to particular equipment operations.8, 29
R4-4.4 Limitation in Using EMI Locators
R4-4.4.1 One caution needs to be observed when using EMI locators to detect ESD events that cause component
damage. The signal received by these devices is generated in areas usually surrounded by grounded metal
components. It may have to pass through equipment panels and travel some distance through the air before it reaches
the detector. There maybe other radio-frequency (RF) sources and reflecting or absorbing materials in the area. The
actual location of the ESD event may be a considerable distance from the EMI locator. It will be difficult to establish
any correlation between the amplitude of the signal received by the EMI locator and the energy in the ESD event
that produced the signal. The EMI locator primarily indicates the occurrence of an ESD event and can be used to
illustrate that a particular electrostatic-charge-control method has eliminated it. It should not be assumed that every
ESD event detected results in damage to components or equipment problems. Additional testing will be needed to
establish that connection.
R4-5 ESD Event Detectors
R4-5.1 ESD event detectors (EED) are devices that are installed directly on products to detect the presence of an
ESD event. They may be attached in proximity to an ESD-sensitive component, connected to the external device
leads, or integrated into the device package. Typically they detect the current pulse of an ESD event through an
antenna or direct connection to the device circuitry.
R4-5.2 EEDs can be useful in determining the occurrence of ESD events in operating production equipment. The
EED has the ability to indicate ESD events of a known level, aiding in the design and performance verification of
automated equipment. While costly analysis of failed devices can also provide this information, correlation to
equipment operations is usually difficult. An EED that can be monitored optically as it passes through operating
equipment provides a convenient method to verify that automated equipment is not generating levels of electrostatic
charge that result in ESD damage.
R4-6 Types of EED Devices
R4-6.1 In some EED devices, the signal is amplified and processed to produce a reflectance change in the built-in
liquid crystal display (LCD). The EED is designed to trip at a predetermined threshold voltage, detecting ESD
transients above the selected amplitude. Some devices can be reset magnetically or optically making them reusable.
R4-6.2 Other devices use the controllable ESD-damage threshold of metal-oxide-semiconductor field-effect
transistors (MOSFETs). The test methodology is to amplify an ESD transient to create sufficient energy to destroy
the gate oxide. The device may be used until the specified ESD level is achieved, and then the EED fails. A similar
device is based on the metal-oxide-semiconductor capacitor (MOSCAP). The current leakage through the device
significantly increases if the ESD amplitude is sufficient to damage the MOS structure. Both of these types of EED
are removed from where they are installed and require additional instrumentation to determine their status.
R4-6.3 Another type of EED employs the magnetic fields from a current flow to affect a series of magneto-optic
thin films. The magnetic field from the ESD current alters the film’s magnetic state and affects the degree of
polarization of visible light reflected from the film. Varying the distance between the film and the ESD currentcarrying conductor indicates different thresholds. This EED can be read using a microscope equipped with a
polarizing element and does not need to be removed from the circuitry to be read. It can be reset with a magnet. 30
Fujie, A., “Pinpointing Sources of Static Electricity with EMI Locator,” Parts 1 and 2, Nikkei Electronics Asia, December 1992 and January
1993, Nikkei Business Publications Asia Ltd., 533 Hennessy Road, Causeway Bay, Hong Kong.
30
Jackson, Tan, and Boehm, “Magneto Optical Static Event Detector,” 1998 EOS/ESD Symposium, pp.233-244, ESD Association.
29
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R4-7 Conclusion
R4-7.1 There is little question that electrostatic-charge problems continue to result in significant losses in hightechnology manufacturing. Increasingly, electrostatic-charge-control methods are applied in the equipment that
produces the product. It will be important to develop and utilize a range of diagnostic methods and measurement
equipment for ESD in equipment.
REVISION RECORD
CHANGES IN THIS DOCUMENT FROM E43-0301
NOTICE: The following information is provided to track revisions to this Document. Negative votes may not be
cast against this information. Changes may be submitted to Standards Staff via a Publication Improvement Proposal
(PIP) form available from the SEMI Standards Web site.
Cycle
Authorization
Section
Description
1108
Ballot 4241
Entire
Document
Complete rewrite:
Title — Change of the document title from: “Guide For Measuring Static Charge On
Objects And Surfaces” to “Recommended Practice for Electrostatic Measurements on
Objects and Surfaces.”
Purpose — Change of the purpose of the document from: “to establish a guide for
reproducible measurement of electrostatic charge(s)” to “to establish a guide for
reproducible electrostatic measurements.”
Scope — The scope of the document was broadened by including voltage, field
level(s) and electrostatic discharge measurements (¶2.1). The applicability of the
standard was identified as ‘semiconductor manufacturing environments.”
Limitations — Minor revisions to ¶ 3.1, 3.2 and ¶ 3.3.
Terminology — Definition of “Ground” moved from ¶5.3 to ¶5.2.
Safety Precautions — The title of the paragraph changed, updates to ¶¶ 6.1–6.3.
Equipment — Major changes: definitions of the equipment, removed performance
verification and zeroing procedures descriptions - those were moved to § 9 Test and
Measurement. Table 1, Test Voltages, was also moved to § 9.
Sufficient Number of Measurements — Title of the section changed from
“Sampling.” The section was updated with more precise recommendations.
Test Methods and Measurements — Significant updates to all paragraphs. Table 2,
Measurement Units, was removed as it is no longer relevant. A new paragraph, ¶ 9.4
Electrostatic Discharge Measurements, was added.
Certification — Updates to all paragraphs in this section.
Documentation — Updates to ¶ 11.1. New Figure 2.
Related Documents — Updates to reflect recent changes and revisions to the
referenced documents.
Appendix 1, Measurement Selection Matrix — Numerous changes to ¶ A1.1. Table
A1-1 Measurement Method Recommendations replaced by two separate tables: Table
A1-1 Recommended Instruments for Electric Charge Measurements, and Table A1-2
Recommended Instruments for ESD Event Measurements.
Related Information 1, Notes on Equipment — Minor updates to all paragraphs.
0213
Ballot 5472
1.0
Title — Change of the Document title from: “Recommended Practice for
Electrostatic Measurements on Objects and Surfaces.” to “Guide for Electrostatic
Measurements on Objects and Surfaces”.
0213
Ballot 5472
5.1
Added new acronyms and used them throughout the Document
0213
Ballot 5472
7.4, 9.4
Added information on the high-impedance contacting digital voltmeter (HIDVM)
0213
Ballot 5472
12.3
Added ESD Association Symposium proceedings
0213
Ballot 5472
Appendix
A1
Added HIDVM to Table A1-1
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Date: 3/8/2016
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Authorization
Section
0213
Ballot 5472
Related
Information
R1-3
Description
Added procedure to determine the effect of the HIDVM on the accuracy of
measurements.
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This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
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development) activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
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LETTER (YELLOW) BALLOT
Cycle
DRAFT
Document Number: 5472
Date: 3/8/2016