Boise State University
Electrical and Computer Engineering Department
Fall 2002
Prof. Bill Knowlton
ENGR 441/541: Semiconductor Materials
COURSE SYLLABUS
Instructor:
Bill
Knowlton,
202M
MEC,
426-5705
(emergency
only),
BKnowlton@boisestate.edu
Class Schedule: Mon. & Wed. 5:15-6:45 pm, room MEC 114
Course Website: http://coen.boisestate.edu/BKnowlton/
Office Hours: Monday and Thurs: 10-11am (or by appointment) – send email.
Prerequisites: ENGR 245: Introduction to Materials Science & Engineering; Hopefully some
classes in: Introduction to Semiconductor Devices, IC Processing, Introduction to
Quantum Mechanics, Introduction to Materials Science & Engineering, and Electrical,
Optical and Magnetic Properties of Materials. More on this to follow.
Text Book: Required: Advanced Semiconductor Fundamentals by Robert F. Pierret, Vol. VI,
(Prentice Hall, 1987). Recommended: Optical Processes in Semiconductors by J.I.
Pankove, (Dover, 1971)
Grading Policy: Approximately 4-7 problem sets (33%), Midterm Exam (15%), Final Exam
(15%) and Project [undergrads & grads. students] & Presentation [grad. students] (35%),
class participation (2%).
Project:
Undergrads: No presentation. For option 2 and 3, no more than a 3 page report is
required OR a one-on-one discussion with me of your results.
Grads: Project and Presentation
Course Description: This course covers some of the materials science of semiconductors. The
course examines properties of semiconductors including the electronic structure, free
carrier statistics, optical, crystallography, defects. Furthermore, the thermodynamic
properties are considered as related to lattice vibrations and diffusion.
Course Content:
1. Introduction to Thermodynamics
a. Fundamental equation of thermodynamics (FEOT)
b. Intensive and extensive variables
c. Concept of force fields/gradients
d. Concept of Free Energy (Gibbs, Helmholtz, Enthalpy, etc.)
2. Intrinsic Semiconductors
a. Free carrier statistics
b. Optical properties
c. Band structure
d. Phonons - lattice vibrations
3. Extrinsic Semiconductors
a. Free carrier statistics
b. Electronic transport
c. Carrier generation and recombination
4. Conceptual Semiconductor Device Physics
a. Chemical potential and Fermi Energy
b. Homojunctions (p-n junctions, bipolar transistors)
c. Heterojunctions (MOSCAPs, MOSFETs, III-V & II-VI)
-1-
Boise State University
Electrical and Computer Engineering Department
Fall 2002
Prof. Bill Knowlton
5. Defects in Crystalline Semiconductors
a. Point defects
b. Line defects
c. Interface and volume defects
6. Application of Thermodynamics to Diffusion = Kinetics WRT Semiconductors
Suggested Bibiliography
1.
Callister, W.D., Jr., Materials Science and Engineering: An Introduction. 5th ed. 2000,
New York: Wiley. 506.
2.
Pierret, R.F., Semiconductor Fundamentals. 2nd ed. Modular Series on Solid State
Devices, ed. G.W. Neudeck and R.F. Pierret. Vol. I. 1988, Reading: Addison-Weseley
Publishing Co. 146.
3.
Blakemore, J.S., Solid State Physics. 1985, New York: Cambridge University Press. 506.
4.
Blakemore, J.S., Semiconductor Statistics. 1987, New York: Dover Publications, Inc.
381.
5.
Kittel, C., Introduction to Solid State Physics. 6th ed. 1986, New York: Wiley. 506.
6.
Ashcroft, N.W. and D.N. Mermin, Solid State Physics. 1976, Philadelphia: Saunders
College. 506.
10. Kelly, A. and G.W. Groves, Crystallography and Crystal Defects. 1970, Herndon:
TechBooks. 428.
11. Hull, D. and D.J. Bacon, Introduction to Dislocations. third ed. International Series on
Materials Science and Technology, ed. H.G. Hopkins. Vol. 37. 1984, Oxford: Pergamon
Press. 257.
-2-