NJG1146KG1
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
I GENERAL DESCRIPTION
The NJG1146KG1 is a fully matched wide band low noise
amplifier GaAs MMIC for terrestrial application.
To achieve wide dynamic range, the NJG1146KG1 offers
high gain mode and low gain mode. Selecting high gain mode
for weak signals, the NJG1146KG1 helps improve receiver
sensitivity through high gain and low noise figure.
Selecting low gain mode for strong signals, it bypasses LNA
circuit to offer higher linearity.
An small and ultra-thin package of ESON6-G1 is adopted.
I PACKAGE OUTLINE
NJG1146KG1
I APPLICATIONS
Terrestrial application from 40MHz to 900MHz
Digital TV, Set-top box and Broadband CATV applications
I FEATURES
G Operating frequency
G Operating voltage
G Package size
[High gain mode]
G Operating current
G Gain
G Noise figure
G IM2
G IM3
[Low gain mode]
G Low current consumption
G Gain(Low loss)
40MHz~900MHz
5.0V typ.
ESON6-G1 (Package size: 1.6mm x 1.6mm x 0.397mm typ.)
60mA typ.
12.0dB typ.
2.2dB typ.
52.0dB typ.
80.0dB typ.
30µA typ.
-1.0dB typ.
I PIN CONFIGURATION
(Top View)
4
Pin Connection
1. RFOUT1
2. NC(GND)
3. RFOUT2
4. RFIN
5. GND
6. VCTL
*Exposed PAD: GND
3
RFIN
RFOUT2
5
Bias
circuit
GND
Logic
circuit
6
VCTL
2
NC
(GND)
1
RFOUT1
1pin INDEX
I TRUTH TABLE
“H”=VCTL(H)“L”=VCTL(L)
VCTL
LNA ON
Bypass
LNA mode
H
ON
OFF
High Gain mode
L
OFF
ON
Low Gain mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2013-04-17
-1-
NJG1146KG1
I ABSOLUTE MAXIMUM RATINGS
T a=+25°C, Zs=Zl=50 ohm
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNITS
Drain voltage
VDD
6.0
V
Control voltage
VCTL
6.0
V
Input power
PIN
VDD=5.0V
+10
dBm
Power dissipation
PD
4-layer FR4 PCB with through-hole
(101.5x114.5mm), Tj=150°C
1200
mW
Operating temperature
Topr
-40~+85
°C
Storage temperature
Tstg
-55~+150
°C
I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS)
VDD=5.0V, T a=+25°C, with application circuit
MIN
TYP
MAX
UNITS
VDD
2.4
5.0
5.5
V
Control voltage (High)
VCTL(H)
1.3
1.8
5.5
V
Control voltage (Low)
VCTL(L)
0.0
0.0
0.5
V
PARAMETERS
Operating voltage
SYMBOL
CONDITIONS
Operating current1
IDD1
RF OFF, VCTL=1.8V
-
60
80
mA
Operating current2
IDD2
RF OFF, VCTL=0V
-
30
50
µA
Control current
ICTL
RF OFF, VCTL=1.8V
-
6
12
µA
-2-
NJG1146KG1
I ELECTRICAL CHARACTERISTICS2 (High Gain mode)
VDD=5.0V, VCTL=1.8V, freq=40~900MHz, T a=+25°C, ZS=Zl=50 ohm, with application circuit
PARAMETERS
SYMBOL
Small signal gain1
Gain1
Noise figure1_1
NF1_1
Noise figure1_2
NF1_2
Input power
at 1dB gain
compression point1
Input 3rd order
intercept point1
2nd order
intermodulation
distortion1
3rd order
intermodulation
distortion1
CONDITIONS
MIN
TYP
MAX
UNITS
9.0
12.0
14.0
dB
-
2.5
4.0
dB
-
2.2
3.0
dB
+0.0
+6.0
-
dBm
+16.0
+22.0
-
dBm
42.0
52.0
-
dB
55.0
80.0
-
dB
-
-17.0
-13.0
dB
Exclude PCB
& connector losses *1
freq=40~80MHz,
Exclude PCB
& connector losses *2
freq=80~900MHz,
Exclude PCB
& connector losses *2
P-1dB(IN)1
IIP3_1
IM2_1
IM3_1
f1=freq, f2=freq+100kHz,
PIN=-12dBm
f1=200MHz, f2=500MHz,
fmeas=700MHz,
PIN1=P IN2=-15dBm *3
f1=600MHz, f2=650MHz,
fmeas=700MHz,
PIN1=P IN2=-15dBm *3
Isolation
ISL1
S12
RF IN Return loss1
RLi1
7.0
10.0
-
dB
RF OUT Return loss1
RLo1
7.0
10.0
-
dB
*1 Input & output PCB and connector losses: 0.014dB(40MHz), 0.088dB(620MHz), 0.121dB(900MHz)
*2 Input PCB and connector losses: 0.007dB(40MHz), 0.011dB(80MHz), 0.044dB(620MHz), 0.060dB(900MHz)
*3 Definitions of IM2 and IM3.
Pout(dBm)
Pout(dBm)
IM2
IM3
700
600/650 700
frequency(MHz)
frequency(MHz)
200
500
-3-
NJG1146KG1
I ELECTRICAL CHARACTERISTICS3 (High Gain mode)
VDD=5.0V, VCTL=1.8V, freq=40~900MHz, T a=+25°C, ZS=Zl=75 ohm, with application circuit
PARAMETERS
SYMBOL
Small signal gain75
Gain75
Composite Second
Order
CSO
Composite Triple Beat
CTB
CONDITIONS
Exclude PCB
& connector losses *1
74channels *4, CW
PIN=+15dBmV
fmeas=295.25MHz,
74channels *4, CW
PIN=+15dBmV
fmeas=295.25±1.25MHz,
74channels *4, Modulation
PIN=+15dBmV
fmeas=295.25±15.75kHz,
MIN
TYP
MAX
UNITS
-
12.0
-
dB
-
-56
-
dBc
-
-81
-
dBc
-
-80
-
dBc
Cross Modulation
XMOD
RF IN Return loss75
RLi75
-
15
-
dB
RF OUT Return loss75
RLo75
-
15
-
dB
*1 Input & output PCB and connector losses: 0.014dB(40MHz), 0.088dB(620MHz), 0.121dB(900MHz)
*4 74channels: ch1~C63(91.25~463.25MHz 6MHz step) and U13~U25(471.25~543.25MHz 6MHz step) except
ch7(189.25MHz) , C28(253.25MHz)
-4-
NJG1146KG1
I ELECTRICAL CHARACTERISTICS4 (Low Gain mode)
VDD=5.0V, VCTL=0V, freq=40~900MHz, T a=+25°C, ZS=Zl=50 ohm, with application circuit
PARAMETERS
SYMBOL
Small signal gain2
Gain2
Input power at
1dB gain
compression point2
Input 3rd order
intercept point2
2nd order
intermodulation
distortion1
3rd order
intermodulation
distortion1
CONDITIONS
IM2_2
IM3_2
TYP
MAX
UNITS
-2.5
-1.0
-
dB
+10.0
+16.0
-
dBm
+25.0
+33.0
-
dBm
40.0
60.0
-
dB
48.0
70.0
-
dB
Exclude PCB
& connector losses *1
P-1dB(IN)2
IIP3_2
MIN
f1=freq, f2=freq+100kHz,
PIN=-2dBm
f1=200MHz, f2=500MHz,
fmeas=700MHz,
PIN1=P IN2=0dBm *3
f1=600MHz, f2=650MHz,
fmeas=700MHz,
PIN1=P IN2=0dBm *3
RF IN Return loss2
RLi2
8.0
15.0
-
dB
RF OUT Return loss2
RLo2
8.0
15.0
-
dB
*1 Input & output PCB and connector losses: 0.014dB(40MHz), 0.088dB(620MHz), 0.121dB(900MHz)
*3 Definitions of IM2 and IM3.
Pout(dBm)
Pout(dBm)
IM2
IM3
700
600/650 700
frequency(MHz)
frequency(MHz)
200
500
-5-
NJG1146KG1
I TERMINAL INFORMATION
No.
SYMBOL
DESCRIPTION
1
RFOUT1
At the High gain mode, RF output terminal.
This terminal doubles as the drain terminal of the LNA. Please
connect this terminal to the power supply(VDD) via inductor(L1).
2
NC(GND)
No connected terminal. This terminal is not connected with internal
circuit.
3
RFOUT2
At the Low gain mode, RF output terminal. Please connect this
terminal with RFOUT1 terminal through DC blocking capacitor(C2)
shown in the application circuit.
4
RFIN
RF input terminal. External capacitor C1 is required to block the DC
bias voltage of internal circuit.
5
GND
Ground terminal. This terminal should be connected to the ground
plane as close as possible for excellent RF performance.
6
VCTL
Control voltage terminal.
Exposed
Pad
GND
Ground terminal. Please connect Exposed Pad with GND by using the
plated through holes.
-6-
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: VDD=5.0V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
Gain, IDD vs. Pin
Pout vs. Pin
(f=620MHz)
(f=620MHz)
20
14
90
15
0
Gain (dB)
Pout (dBm)
5
-5
-10
12
80
10
70
8
60
IDD
6
-15
IDD (mA)
Gain
10
50
Pout
-20
4
40
-25
P-1dB(IN)=+7.7dBm
P-1dB(IN)=+7.7dBm
-30
-40
-30
-20
-10
0
2
-40
10
-30
-20
30
10
0
Pin (dBm)
Pin (dBm)
Pout, IM3 vs. Pin
NF, Gain vs. Frequency
(f1=620MHz, f2=620.1MHz)
40
OIP3=+36.1dBm
20
4
16
3.5
14
3
12
2.5
10
Pout
-20
-40
IM3
8
2
NF
Gain
1.5
6
1
4
Gain (dB)
0
NF (dB)
Pout, IM3 (dBm)
-10
-60
-80
-40
-30
-20
-10
0
10
20
2
0.5
IIP3=+24.3dBm
(Exclude PCB, Connector Losses)
0
30
0
500
Pin (dBm)
1000
1500
Frequency (MHz)
0
2000
IIP3, OIP3 vs. Frequency
P-1dB(IN) vs. Frequency
(f1=Frequency, f2=f1+100kHz, Pin=-12dBm)
12
40
OIP3
11
35
IIP3, OIP3 (dBm)
P-1dB(IN) (dBm)
10
9
8
P-1dB(IN)
7
30
25
IIP3
6
20
5
15
4
0
500
1000
Frequency (MHz)
1500
2000
0
500
1000
1500
2000
Frequency (MHz)
-7-
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: VDD=5.0V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
-8-
S11, S22 (f=10MHz~3GHz)
S21, S12 (f=10MHz~3GHz)
VSWR (f=10MHz~3GHz)
Zin, Zout (f=10MHz~3GHz)
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: VDD=5.0V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
S11, S22 (f=50MHz~20GHz)
S21, S12 (f=50MHz~20GHz)
K-factor vs. Frequency
5
40
4
30
3
K-factor
K-factor
K-factor vs. Frequency
50
20
2
10
1
0
0
0
5000
10000
Frequency (MHz)
15000
20000
0
5000
10000
15000
20000
Frequency (MHz)
-9-
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
Gain vs. VDD
IDD vs. VDD
(RF OFF)
80
(f=620MHz)
16
70
14
60
12
Gain
Gain (dB)
IDD (mA)
50
IDD
40
30
10
8
6
4
20
2
10
0
0
2
2.5
3
3.5
4
4.5
5
5.5
2
6
2.5
3
3.5
4
4.5
5
5.5
6
5
5.5
6
VDD (V)
VDD (V)
RLi, RLo vs. V
DD
NF vs. VDD
4
(f=620MHz)
20
3.5
3
15
NF (dB)
RLi, RLo (dB)
NF(at 40MHz)
2.5
2
NF(at 620MHz)
1.5
1
RLo
10
RLi
5
0.5
0
0
2
2.5
3
3.5
4
4.5
5
5.5
6
2
3
3.5
4
4.5
VDD (V)
VDD (V)
P-1dB(IN) vs. VDD
IIP3, OIP3 vs. VDD
(f=620MHz)
10
2.5
(f1=620MHz, f2=620.1MHz, Pin=-12dBm)
40
35
OIP3
30
IIP3, OIP3 (dBm)
P-1dB(IN) (dBm)
5
0
P-1dB(IN)
25
20
15
IIP3
10
-5
5
0
-10
2
2.5
3
3.5
4
VDD (V)
- 10 -
4.5
5
5.5
6
2
2.5
3
3.5
4
VDD (V)
4.5
5
5.5
6
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
IM2 vs. VDD
IM3 vs. V
DD
(f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=-15dBm)
80
(f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=-15dBm)
100
70
80
60
IM3
IM2
IM3 (dB)
IM2 (dB)
50
40
30
60
40
20
20
10
0
0
2
2.5
3
3.5
4
4.5
5
5.5
6
2
2.5
3
VDD (V)
4
4.5
5
5.5
6
VDD (V)
K-factor vs. Frequency
K-factor vs. Frequency
50
5
40
4
30
3
K-factor
K-factor
3.5
VDD=6.0V
20
VDD=6.0V
2
VDD=5.0V
VDD=5.0V
1
10
VDD=2.4V
VDD=2.4V
0
0
0
5000
10000
Frequency (MHz)
15000
20000
0
5000
10000
15000
20000
Frequency (MHz)
- 11 -
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: VDD=5.0V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit
IDD vs. Ta
Gain vs. Ta
(RF OFF)
80
(f=620MHz)
16
70
14
60
12
Gain
IDD
Gain (dB)
IDD (mA)
50
40
30
8
6
4
20
2
10
0
-40
10
-20
0
20
40
60
80
0
-40
100
-20
0
20
Ta ( C)
60
80
100
NF vs. Frequency
6
5
5
4
4
Ta=+85oC
NF (dB)
NF (dB)
NF vs. Ta
6
3
NF(at 40MHz)
2
Ta=+25oC
3
2
NF(at 620MHz)
1
0
-40
40
Ta (oC)
o
Ta=-40oC
1
-20
0
20
40
60
80
0
100
0
200
400
Ta (oC)
600
800
1000
Frequency (MHz)
P-1dB(IN) vs. Ta
IIP3, OIP3 vs. Ta
(f=620MHz)
(f1=620MHz, f2=620.1MHz, Pin=-12dBm)
40
10
35
OIP3
30
IIP3, OIP3 (dBm)
P-1dB(IN) (dBm)
8
P-1dB(IN)
6
4
25
20
IIP3
15
10
2
5
0
-40
-20
0
20
40
o
Ta ( C)
- 12 -
60
80
100
0
-40
-20
0
20
40
o
Ta ( C)
60
80
100
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: VDD=5.0V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit
IM2 vs. Ta
IM3 vs. Ta
(f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=-15dBm)
80
(f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=-15dBm)
100
70
IM3
80
60
IM2
IM3 (dB)
IM2 (dB)
50
40
30
60
40
20
20
10
0
-40
-20
0
20
40
60
80
0
-40
100
-20
0
RLi, RLo vs. Ta
40
60
80
100
IDD vs. VCTL
(f=620MHz)
20
20
Ta (oC)
Ta (oC)
80
70
60
RLi
50
IDD (mA)
RLi, RLo (dB)
15
10
RLo
o
+85 C
40
o
0C
o
+75 C
30
o
-25 C
o
5
+50 C
20
o
-40 C
o
+25 C
10
0
-40
0
-20
0
20
40
60
80
100
0
0.5
Ta ( C)
K-factor vs. Frequency
1.5
2
K-factor vs. Frequency
50
5
40
4
30
K-factor
K-factor
1
VCTL (V)
o
Ta=+85oC
20
3
Ta=+85oC
2
Ta=+25oC
10
1
Ta=-40oC
Ta=-40oC
Ta=+25oC
0
0
5000
10000
Frequency (MHz)
15000
20000
0
0
5000
10000
15000
20000
Frequency (MHz)
- 13 -
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: VDD=5.0V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
Gain, IDD vs. Pin
Pout vs. Pin
(f=620MHz)
(f=620MHz)
20
0
10
15
Gain
10
5
-1
8
-2
6
-10
-15
-20
-3
IDD (mA)
-5
Gain (dB)
Pout (dBm)
0
4
P-1dB(IN)=+18.0Bm
-25
Pout
-30
-4
2
-35
-40
IDD
P-1dB(IN)=+18.0dBm
-5
-45
-40
-30
-20
-10
0
10
0
-40
20
-30
-20
-10
0
10
20
Pin (dBm)
Pin (dBm)
Pout, IM3 vs. Pin
Gain vs. Frequency
(f1=620MHz, f2=620.1MHz)
40
0
OIP3=+36.2dBm
20
-2
Gain
Pout
-20
Gain (dB)
Pout, IM3 (dBm)
0
-40
-4
-6
-60
IM3
-8
-80
IIP3=+37.1dBm
-100
-30
-20
-10
0
10
20
30
(Exclude PCB, Connector Losses)
-10
40
0
500
Pin (dBm)
1000
1500
2000
Frequency (MHz)
IIP3, OIP3 vs. Frequency
P-1dB(IN) vs. Frequency
(f1=Frequency , f2=f1+100kHz, Pin=-2dBm)
40
20
IIP3
IIP3, OIP3 (dBm)
P-1dB(IN) (dBm)
19
18
P-1dB(IN)
17
OIP3
35
30
16
25
15
0
- 14 -
500
1000
Frequency (MHz)
1500
2000
0
500
1000
Frequency (MHz)
1500
2000
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: VDD=5.0V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
S11, S22 (f=10MHz~3GHz)
S21, S12 (f=10MHz~3GHz)
VSWR (f=10MHz~3GHz)
Zin, Zout (f=10MHz~3GHz)
- 15 -
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: VDD=5.0V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
S11, S22 (f=50MHz~20GHz)
S21, S12 (f=50MHz~20GHz)
K-factor vs. Frequency
5
40
4
30
3
K-factor
K-factor
K-factor vs. Frequency
50
20
1
10
0
0
0
5000
10000
Frequency (MHz)
- 16 -
2
15000
20000
0
5000
10000
Frequency (MHz)
15000
20000
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: VDD=5.0V, VCTL=0V, Zs=Zl=50 ohm, with application circuit
IDD vs. Ta
Gain vs. Ta
(RF OFF)
50
(f=620MHz)
0
-0.5
-1
Gain
IDD
30
Gain (dB)
IDD (µ A)
40
20
-1.5
-2
-2.5
-3
10
-3.5
0
-40
-20
0
20
40
60
80
-4
-40
100
-20
0
P-1dB(IN) vs. Ta
80
100
80
100
(f=620MHz)
24
22
P-1dB(IN) (dBm)
RLi, RLo (dB)
60
RLi, RLo vs. Ta
RLi
15
40
Ta ( C)
(f=620MHz)
20
20
Ta (oC)
o
RLo
10
20
P-1dB(IN)
18
5
16
0
-40
-20
0
20
40
60
80
100
Ta (oC)
14
-40
-20
0
20
40
60
Ta (oC)
IIP3, OIP3 vs. Ta
(f1=620MHz, f2=620.1MHz, Pin=-2dBm)
40
IIP3
IIP3, OIP3 (dBm)
38
36
OIP3
34
32
30
-40
-20
0
20
40
60
80
100
o
Ta ( C)
- 17 -
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: VDD=5.0V, VCTL=0V, Zs=Zl=50 ohm, with application circuit
IM2 vs. Ta
IM3 vs. Ta
(f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=0dBm)
80
(f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=0dBm)
100
70
80
60
IM3
IM2
IM3 (dB)
IM2 (dB)
50
40
30
60
40
20
20
10
0
-40
-20
0
20
40
60
80
0
-40
100
-20
0
20
40
60
80
100
Ta (oC)
Ta (oC)
K-factor vs. Frequency
K-factor vs. Frequency
50
5
40
4
30
3
K-factor
K-factor
Ta=+85oC
Ta=+85oC
20
Ta=+25oC
2
Ta=+25oC
Ta=-40oC
1
10
Ta=-40oC
0
0
0
5000
10000
Frequency (MHz)
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15000
20000
0
5000
10000
Frequency (MHz)
15000
20000
NJG1146KG1
I APPLICATION CIRCUIT
(Top View)
R1
680 ohm
C2
0.01µ
µF
RF IN
4
C1
0.01µ
µF
3
RFIN
RFOUT2
5
GND
VCTL
2
Bias
circuit
NC
(GND)
RF OUT
Logic
circuit
6
VCTL
1
RFOUT1
1Pin INDEX
L1
470nH
C4
0.01µ
µF
C3
0.01µ
µF
VDD
I TEST PCB LAYOUT
PARTS LIST
Parts ID.
L1
R1
C1
RF IN
C2 C3
RF OUT
C1~C4
R1
Manufacturer
TAIYO-YUDEN
HK1608 Series
MURATA
GRM15 Series
KOA
RK73B Series
L1
C4
VDD
VCTL
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH
=0.40mm (Z0=50 ohm)
PCB SIZE=16.8mm x 16.8mm
1PIN INDEX
PRECAUTIONS
G C1~C3 are DC-Blocking capacitors, and L1 is a DC-feed inductor, and C4 is a bypass capacitor.
G L1 is an RF choke. (DC feed inductor)
G Please connect Exposed Pad with GND by using the plated through hole.
G In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.
G All external parts are placed as close as possible to the IC.
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NJG1146KG1
I MEASUREMENT BLOCK DIAGRAM
Measuring instruments
NF Analyzer
: Agilent 8973A
Noise Source
: Agilent 346A
Setting the NF analyzer
Measurement mode form
Device under test
: Amplifier
System downconverter : off
Mode setup form
Sideband
: LSB
Averages
: 16
Average mode
: Point
Bandwidth
: 4MHz
Loss comp
: off
Tcold
: setting the temperature of noise source (303.15K)
NF Analyzer
(Agilent 8973A)
Noise Source
(Agilent 346A)
* Noise source and NF analyzer
Input (50Ω)
Noise Source
Drive Output
are connected directly.
Calibration Setup
NF Analyzer
(Agilent 8973A)
Noise Source
(Agilent 346A)
* Noise source and DUT, DUT and
In
DUT
out
Measurement Setup
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Input (50Ω)
Noise Source
Drive Output
NF analyzer are connected directly.
NJG1146KG1
I PACKAGE OUTLINE (ESON14-D7)
0.10 M S
A
0 . 39 7 ±0 . 0 3 0
S
0.075
0.10 M
S
S
+0.010
-0.008
0.05
S
1. 6 0 ±0 . 0 5
B
1 . 6 0 ± 0 .0 5
A
0. 0 1 0
Please connect to GND
+0.06
-0.04
C0
+0.06
0 . 6 8 -0.04
1.20
.2
+0.06
0 . 2 1 -0.04
B
3
0
-R
Unit
Substrate
Terminal Treat
Molding Material
Weight
.2
0. 5
:mm
:Cu
:SnBi
:Epoxy Resin
:0.0035 (g)
0.5
0 . 2 6 +0.06
-0.04
φ0.05 M
S AB
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions.
The application circuits in this databook are
described only to show representative
usages of the product and not intended for
the guarantee or permission of any right
including the industrial rights.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please
handle with care to avoid these damages.
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