KSC2330 NPN Epitaxial Silicon Transistor

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KSC2330
KSC2330
Color TV Chroma Output
• Collector-Base Voltage : VCBO=300V
• Current Gain Bandwidth Product : fT=50MHz (TYP.)
TO-92L
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
300
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
300
V
IC
Collector Current
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ +150
°C
7
V
100
mA
Electrical Characteristics Ta=25°C unless otherwise notd
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=100µA, IE=0
Min.
300
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
300
BVEBO
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
ICBO
Collector Cut-off Current
VCB=200V, IE=0
Typ.
Max.
Units
V
V
7
V
0.1
40
µA
hFE
DC Current Gain
VCE=10V, IC=20mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=10mA, IB=1mA
240
fT
Current Gain Bandwidth Product
VCE=30V, IC=10mA
50
MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
4
pF
0.5
V
hFE Classification
Classification
R
O
Y
hFE
40 ~ 80
70 ~ 140
120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2330
Typical Characteristics
20
1000
IB = 120µA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
VCE = 10V
16
IB = 100µA
12
IB = 80µA
IB = 60µA
8
IB = 40µA
4
100
10
IB = 20µA
1
0
0
20
40
60
80
100
1
120
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
100
IC = 10 IB
1
f = 1MHz
IE = 0
Cob[pF], CAPACITANCE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
VBE(sat)
0.1
VCE(sat)
10
1
0.1
0.01
1
10
1
100
10
100
VCB[V], COLLECTOR BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
1.6
PC[W], POWER DISSIPATION
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
o
Ta[ C], AMIBIENT TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2330
Package Dimensions
TO-92L
0.70MAX.
1.00 ±0.10
1.70 ±0.20
13.50 ±0.40
8.00 ±0.20
4.90 ±0.20
0.80 ±0.10
1.00MAX.
0.50 ±0.10
1.27TYP
[1.27 ±0.20]
0.45 ±0.10
3.90 ±0.20
0.45 ±0.10
3.90 ±0.20
1.45 ±0.20
2.54 TYP
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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