KSC2328A
KSC2328A
Audio Power Amplifier Applications
• Complement to KSA928A
• Collector Power Dissipation : PC=1W
• 3 Watt Output Application
TO-92L
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
30
Units
V
VCEO
VEBO
Collector-Emitter Voltage
30
V
Emitter-Base Voltage
5
V
IC
Collector Current
2
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=100µA, IE=0
Min.
30
BVCEO
Collector-Emitter Breakdown Voltage
IC=10mA, IB=0
30
BVEBO
Emitter-Base Breakdown Voltage
IE=1mA, IC=0
5
ICBO
Collector Cut-off Current
VCB=30V, IE=0
Typ.
Max.
Units
V
V
V
100
nA
100
nA
IEBO
Emitter Cut-off Current
VEB=5V, IC=0
hFE
DC Current Gain
VCE=2V, IC=500mA
VBE (on)
Base-Emitter On Voltage
VCE=2V, IC=500mA
1.0
VCE (sat)
Collector-Emitter Saturation Voltage
IC=1.5A, IB=0.03A
2.0
fT
Current Gain Bandwidth Product
VCE=2V, IC=500mA
120
MHz
Cob
Collector Output Capacitance
VCB=10V,IE=0, f=1MHz
30
pF
100
320
V
V
hFE Classification
Classification
O
Y
hFE
100 ~ 200
160 ~ 320
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2328A
Typical Characteristics
1400
VCE = 2V
IB = 6mA
1000
IB = 5mA
800
IB = 4mA
600
IB = 3mA
400
IB = 2mA
200
IB = 1mA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
IB = 7mA
1200
1000
100
10
0
0
2
4
6
8
10
12
14
16
1
18
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 2. DC current Gain
1400
VCE = 2V
IC = 50 IB
1200
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
o
Ta = 25 C
1
0.1
1000
800
600
400
200
0
0.0
0.01
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
1.4
IC (MAX) PULSE
IC (MAX)
1s
1
T
DC
C
=2
5
O
o
C
PE
RA
TI
N
PC[W], POWER DISSIPATION
1.2
s
1m
IC[A], COLLECTOR CURRENT
100
G
0.1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
0.8
0.6
0.4
0.2
V CEO (MAX)
0.01
0.1
1.0
100
0.0
0
25
50
75
100
125
150
175
o
Ta[ C], AMIBIENT TEMPERATURE
Figure 6. Power Derating
Rev. A2, September 2002
KSC2328A
Package Dimensions
TO-92L
0.70MAX.
1.00 ±0.10
1.70 ±0.20
13.50 ±0.40
8.00 ±0.20
4.90 ±0.20
0.80 ±0.10
1.00MAX.
0.50 ±0.10
1.27TYP
[1.27 ±0.20]
0.45 ±0.10
3.90 ±0.20
0.45 ±0.10
3.90 ±0.20
1.45 ±0.20
2.54 TYP
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1