Supporting Information
“Textured” Network Devices: Overcoming Fundamental
Limitations of Nanotube/Nanowire Network-based
Devices**
Minbaek Lee1, Meg Noah2, June Park3, Maeng-Je Seong3, Young-Kyun
Kwon,2,4* and Seunghun Hong1*
1
Department of Physics and Astronomy, Seoul National University, Seoul, 151-747
(Korea)
2
Department of Physics and Applied Physics, University of Massachusetts, Lowell,
MA 01854 (USA)
3
Department of Physics, Chung-Ang University, Seoul, 156-756 (Korea)
4
Department of Physics and Research Institute for Basic Sciences, Kyung Hee
University, Seoul, 130-701 (Korea)
[*] E-mail: shong@phya.snu.ac.kr; ykkwon@khu.ac.kr
-1-
Figure S1. Schematic diagram depicting the method to calculate the crossection SCNT of a
single swCNT from AFM topography images to estimate the effective thickness teff in the
simulation data. Here, W, LNT, and RNT are the measured width, length, and radius of
individual swCNTs using AFM, respectively. On average, we measured W ~ 20 nm, LNT ~
650 nm, and RNT ~ 0.75 nm. After some geometrical analysis, we can calculate the average
volume (VCNT) of a single swCNT as following.
W = 20nm = 2[( RT + RNT ) 2 − ( RT − RNT ) 2 ]1 / 2
RNT = 0.75nm
θ = π − 2 tan −1 (
RT − RNT
)
W /2
S CNT =
1
( RNT + RT ) 2 (θ − sin θ )
2
VCNT =
1
( RNT + RT ) 2 (θ − sin θ ) × LNT = 1.31 × 10 -5 um 3
2
The total volume of swCNTs in the simulation was estimated by multiplying VCNT by the
number of swCNT in channel. The effective thickness teff of swCNT films in simulation data
was estimated by dividing total swCNT volume by total channel area.
-2-
Figure S2. Schematic diagram explaining the formation of metallic paths via lateral
connection. a) Textured channels with both semiconducting and metallic paths. A current path
with any semiconducting swCNT should have semiconducting behavior. b) Textured channels
comprised of only semiconducting paths. In this case, the device is expected to have
semiconducting behavior with large on-off ratio. c) Lateral connection between individual
paths increases the probability of metallic paths.
-3-