Thermal Processing and Native Oxidation of Silicon Nanoparticles
Brandon J Winters1, Jason Holm1, Jeffrey T Roberts2
1
Department of Chemistry, University of Minnesota, Minneapolis MN, 55455
2
College of Science, Purdue University, West Lafayette, IN 47907
Supplementary Data
SiD
0.30
SiD
3
SiD
2
0.25
0.20
Absorbance (a.u.)
RT
200
0.15
400
500
0.10
550
600
650
0.05
700
0.00
1650
1600
1550
1500
1450
-1
Wavenumbers (cm )
Figure 1s: Transmission FTIR spectra of the Si-Dx stretching region for silicon nanoparticles thermally
processed at various temperatures (thermal processing temperature indicated in °C).
1.0
1.0
(b) 400
0.8
0.8
0.6
0.6
1 month
0.4
1 week
Absorbance (a.u.)
Absorbance (a.u.)
(a) 22
0.4
1 week
0.2
1 day
0.2
1 month
1 day
0 minutes
0 minutes
0.0
0.0
1600
1400
1200
1000
1600
800
1400
1.0
1000
800
Wavenumbers (cm )
1.0
(d) 700
(c) 500
0.8
0.8
1 month
1 week
0.4
0.6
Absorbance (a.u.)
0.6
Absorbance (a.u.)
1200
-1
-1
Wavenumbers (cm )
1 month
1 week
0.4
1 day
0.2
1 day
0.2
0 minutes
0 minutes
0.0
0.0
1600
1400
1200
1000
-1
Wavenumbers (cm )
800
1600
1400
1200
1000
800
-1
Wavenumbers (cm )
Figure 2s: DRIFTS spectra of thermally treated deuterium terminated silicon nanoparticles at 4 time
intervals of ambient oxidation (a) 22 °C, (b) 400 °C, (c) 500 °C, (d) 700 °C processing.
100
90
80
Fractional Oxide Content (Si 2p)
70
60
Increasing time
of ambient
50
oxidation
40
30
20
10
0
0
100
200
300
400
500
600
700
800
Temperature (C)
Figure 3s: XPS data for fractional oxide content of the Si 2p peak for four thermal processing
temperatures after 0 days (squares), 1 week (circles), and 1month (triangles) ambient exposure.