PHOTOPHYSICAL ABLATION OF POROUS SILICON AS
MANIFESTATION OF MESOSCOPIC FORCE FLUCTUATIONS IN
NANOWIRES
V.P. Aksenov, G.N. Mikhailova
A. Prokhorov General Physical Institute, Vavilov St., 38, 119991, Moscow, Russia
Laser ablation of porous silicon is considered from the point of view of
photophysical mechanism and the ablation of quantum nanowires of silicon.
Laser ablation of porous silicon as a function of laser wavelength and width
of silicon nanowires was studied in our experiments. The time-resolved evolution of
the cloud of silicon particles produced by laser ablation has been determined in-situ
from the analysis of the photoluminescence kinetics.
Experimental results were explained on the base of photophysical
mechanism of ablation suggested by B. Lukynchuk et al. and phenomenological
model of nanostructure destroying. According to the models fotoexcited carriers in
quantum wires of porous silicon destroy it in consequence of space limited motion in
quantum wires. The squeezed electron-hole plasma heated by IR-laser radiation may
produce a damage of silicon nanowires.