Publication list of Prof. N.N. Ledentsov
Contents:
A. List of Papers
p. 1
B. List of recent invited talks on Quantum Dots (first author talks only)
p. 50
A. List of Papers
2002
470. N.N. Ledentsov “Long Wavelength Quantum Dot Lasers: From Promising to Unbeatable”
in "Future Trends in Microelectronics: The Nano Millenium", Ed. by: S. Luryi, J. Xu, A.
Zaslavsky, John Wiley & Sons, pp. 195-218 (2002).
469. A.R. Kovsh, N.A. Maleev, A.E.Zhukov, S.S. Mikhrin, A.P. Vasil'ev, Yu.M. Shernyakov,
M.V. Maximov, D.A. Livshits, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, and D. Bimberg
“InAs/InGaAs/GaAs quantum dot lasers of 1.3 micron range with high (88%) differential
efficiency”
Electronics Letters, in print.
468. A.R. Kovsh, N.A. Maleev, A.E. Zhukov, S.S. Mikhrin, A.V. Vasil¡¦ev, E.S. Semenova,
Yu.M. Shernyakov, M.V. Maximov, D.A. Livshits, D.S. Sizov, N.V. Kryzhanovskaya,
I.P. Soshnikov, E.S. Nikitina, V.M. Ustinov, N.N. Ledentsov, D. Bimberg, Zh.I. Alferov
“High-gain low-current long-wavelength lasers based on InAs/InGaAs quantum dots”
Proceedings 26th International Conference on the Physics of Semiconductors, July 29 August 2 2002, Edinburgh, UK.
467. D. Ouyang, R. Heitz, N. N. Ledentsov, S. Bognár, R. L. Sellin, Ch. Ribbat, and D. Bimberg
“Lateral-cavity spectral hole burning in quantum-dot lasers”
Appl. Phys. Lett. 81 (9), pp. 1546-1548 (2002).
466. N.N. Ledentsov and D. Bimberg
“Growth of Self-Organized Quantum Dots for Optoelectronics Applications:
Nanostructures, Nanoepitaxy, Defect Engineering” (invited paper)
Proc. of the thirteenth international conference on Crystal Growth in conjunction with the
eleventh international conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July
2001.
465. N.N. Ledentsov
“Long-wavelength quantum-dot lasers on GaAs substrates: from media to device
concepts” (invited paper)
IEEE J. Sel. Top. Quantum Electron. 8, 2002, in print.
464. N.N. Ledentsov and V.A. Shchukin
“Novel Approaches to Semiconductor Lasers” (invited)
in: Proceedings Asia Pacific Optical and Wireless Communications Conference, Shanghai,
China, 14-18 October 2002 (APOC 2002, Photonics Asia). SPIE Proc.
463. N.N. Ledentsov and V.A. Shchukin
“Long wavelength lasers using GaAs-based quantum dots”
Proceedings of SPIE Vol. #4732, Photonics and Quantum Computing Technologies for
Aerospace Applications IV (E. Donkor, M.J. Hayduk, A.R. Pirich, E.W. Taylor) SPIE, 2002,
pp. 15-26.
462. N.N. Ledentsov and V.A. Shchukin
“Novel concepts for injection lasers”
SPIE Optical Engineering, Volume 41, Number 12 (2002) to be published.
461. N.N. Ledentsov and V.A. Shchukin
“Critical Analysis of Wavelength-Tunable Vertical-Cavity Surface-Emitting Lasers based on
Quantum-Confined Stark Effect”
IEEE J. Sel. Top. Quantum Electron. 8, 2002, to be published
460. N.N. Ledentsov
“Long-wavelength InGaAs/GaAs Quantum Dot Lasers”
in Nano-Optoelectronics. Concepts, Physics and Devices, M. Grundmann (Ed.), Springer,
Berlin, pp. 317-337 (2002).
459. N.N. Ledentsov, V.M. Ustinov, D. Bimberg, J.A. Lott, and Zh.I.Alferov
“Applications of Quantum Dots in Semiconductor Lasers”
in: Quantum Dots, E. Borovitskaya, M.S. Shur (Eds.), World Scientific, 350 p. (2002).
458. N. Ledentsov, D. Bimberg, V.M. Ustinov, Zh.I. Alferov and J.A. Lott
“Quantum dots for VCSEL applications at =1.3µm” (invited paper)
Physica E: Low-dimensional Systems and Nanostructures
13, Issue 2-4, 871-875 ( 2002).
457. N.N. Ledentsov, D. Bimberg, V.M. Ustinov, Zh.I. Alferov and J.A. Lott
“Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics”
(plenary paper)
Jpn. J. Appl. Phys., Part 1, 41, 949-952 (2002)
456. N. N. Ledentsov, D. Litvinov, D. Gerthsen, G.A. Ljubas, V.V. Bolotov, B.R. Semyagin,
V.A. Shchukin, I.P. Soshnikov, V.M. Ustinov and D. Bimberg
“Quantum wires and quantum dots on corrugated (311) surfaces: potential applications in
optoelectronics”
In: Proceedings of SPIE “Quantum Dot Devices and Computing”, J.A. Lott, N.N. Ledentsov,
K.J. Malloy, B.E. Kane, T.W. Sigmon, Eds., 21 January, 2002 San Jose, USA, Vol. 4656
(2002), pp. 33-42.
455. V.A. Shchukin, N.N. Ledentsov and D. Bimberg
“Epitaxy of Nanostructures”
ISBN 3.540-67817-4, Springer Series on Nanoscience and Technology. Springer, Berlin
2002, 320 pp.
454. D. Litvinov, A. Rosenauer, D. Gerthsen, N.N. Ledentsov, D. Bimberg, G.A. Ljubas,
V.V. Bolotov, V.A.Volodin, M.D.Efremov , V.V.Preobrazhenskii, B.R. Semyagin, and
I.P. Soshnikov
“Ordered arrays of vertically-correlated GaAs and AlAs quantum wires grown on a GaAs
(311)A surface”
Appl. Phys. Lett. 81, pp. 1080-1082 (2002).
453. D. Bimberg, N.N. Ledentsov, and J.A. Lott
“Quantum-Dot Vertical-Cavity Surface-Emitting Lasers”
MRS Bulletin 27 (7), pp. 531-538 (July 2002).
452. G.A. Lyubas, N.N. Ledentsov, D. Litvinov, D. Gerthsen, I.P. Soshnikov, and V.M. Ustinov
“Photoluminescence and the Structure of Heterointerfaces of (311)A- and (311)B-Oriented
GaAs/AlAs Superlattices”
JETP Letters 75, Issue 4, 179-183 (2002).
451. C.M.A. Kapteyn, J. Ehehalt, R. Heitz, D. Bimberg, G.E. Cirlin, V.M. Ustinov and N.N.
Ledentsov
“Size-selective optically excited capacitance transient spectroscopy of InAs/GaAs
quantum dots”
Physica E: Low-dimensional Systems and Nanostructures 13 (2-4), 259-262 (2002)
2
450. Yu. G. Musikhin, D. Gerthsen, D. A. Bedarev, N. A. Bert, W. V. Lundin, A. F. Tsatsul'nikov,
A. V. Sakharov, A. S. Usikov, Zh. I. Alferov, I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann,
and D. Bimberg
“Influence of metalorganic chemical vapor deposition growth conditions on In-rich
nanoislands formation in InGaN/GaN structures”
Appl. Phys. Lett. 80, 2099-2101 (2002).
449. V.A. Shchukin, N.N. Ledentsov and D. Bimberg
“Entropy effects in the self-organized formation of nanostructures”
in “Atomistic Aspects of Crystal Growth”, M. Kotrla, N.I. Papanicolaou, and
D.D. Vvedensky, Eds., Kluwer, pp.397-409, 2002.
448. N.A. Maleev, A.R. Kovsh, A.E. Zhukov, S.S. Mikhrin, A.P. Vasiliev, E.S. Semenov,
Yu.M. Shernyakov, E.V. Nikitina, N.V. Kryjanovskaya, D.S. Sizov, I.P. Soshnikov,
M.V. Maximov, N.N. Ledentsov, V.M. Ustinov, D. Bimberg and Zh.I. Alferov
“MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates”
10th Intl. Symposium “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 17-21, 2002, Ioffe Institute, 2002, pp. 399-402.
447. A.R. Kovsh, A.E. Zhukov, N.A. Maleev, S.S. Mikhrin, A.V. Vasil’ev, Yu.M. Shernyakov,
D.A. Livshits, M.V. Maximov, D.S. Sizov, N.V. Kryzhanovskaya, N.A. Pikhtin,
V.A. Kapitonov, I.S. Tarasov, N.N. Ledentsov, V.M. Ustinov, J.S. Wang, L. Wei, G. Lin, and
J.Y. Chi
“High power lasers based on submonolayr InAs-GaAs quantum dots and InGaAs quantum
well”
10th Intl. Symposium “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 17-21, 2002, Ioffe Institute, 2002, pp. 395-398.
446. C. Kapteyn, J. Ehehalt, R. Heitz, D. Bimberg, G.E. Cirlin, V.M. Ustinov, and N.N. Ledentsov
“Optical memory concepts with self-organized quantum dots – material systems and
energy-selective charging”
10th Intl. Symposium “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 17-21, 2002, Ioffe Institute, 2002, pp. 271-274.
445. V.Ya. Aleshin, D.M. Gaponova, D.G. Revin, L.E. Vorobjev, S.N. Danilov, V.Yu. Panevin,
N.K. Fedosov, D.A. Firsov, V.A. Shalygin, A.D. Andreev, A.E. Zhukov, N.N. Ledentsov,
V.M. Ustinov, G.E. Cirlin, V.A. Egorov, F. Fossard, F. Julien, E. Towe, D. Pal, S.R. Schmidt,
and A. Seilmeier
Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells”
10th Intl. Symposium “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 17-21, 2002, Ioffe Institute, 2002, pp. 229-232.
444. I.P. Soshnikov, B.V. Volovik, A.R. Kovsh, A.E. Zhukov, A.F. Tsatsul’nikov, O.M. Gorbenko,
N.N. Ledentsov, V.M. Ustinov, P. Werner, N.D. Zakharov and D. Gerthsen
“Formation peculiarities of the InAs/GaAs submonolayer superlattice”
10th Intl. Symposium “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 17-21, 2002, Ioffe Institute, 2002, pp. 68-71.
443. D.S. Sizov, N.V. Kryzhanovskaya, A.G. Gladyshev, Yu.B. Samsonenko, G.E. Cirlin,
N.K. Polyakov, V.A. Egorov, A.A. Tonkih, Yu.G. Musikhin, A.F. Tsatsul’nikov,
N.N. Ledentsov and V.M. Ustinov
“Investigation of the formation of InAs QDs in an AlGaAs matrix”
10th Intl. Symposium “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 17-21, 2002, Ioffe Institute, 2002, pp. 60-63.
2001
3
442. N.N. Ledentsov, V.A. Shchukin, D. Bimberg, V.M. Ustinov, N.A. Cherkashin,
Yu.G. Musikhin, B.V. Volovik, G.E. Cirlin and Zh.I. Alferov
“Reversibility of the island shape, volume, and density in Stranski-Krastanow growth”
Semicond. Sci. and Technol. 16, 502-506 (2001).
441. N.N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen,I. P. Soshnikov, V.A. Shchukin,
V.M. Ustinov, A.Yu. Egorov, A.E. Zukov, V.A. Volodin, M.D. Efremov, V.V. Preobrazhenskii,
B.P. Semyagin, D Bimberg and Zh.I. Alferov
Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs
structures on corrugated (311)A surface
Journal of Electronic Materials 30 (5), 463 - 470 (2001).
440. N.N. Ledentsov, D. Bimberg, V.M. Ustinov, Zh.I. Alferov, and J.A. Lott
„Self-oganized InGaAs quantum dots for advanced applications in optoelectronics“
(plenary paper)
Proccedings Int. Conf. on Indium Phosphide and Related Materials, paper TuPl2, May 1418, 2001, Nara, Japan, pp. 5-8
439. N.N. Ledentsov, V.M. Ustinov, V.A. Shchukin, D. Bimberg, J.A. Lott, and Zh.I.Alferov
“High-power long-wavelength lasers using GaAs-based quantum dots (Invited Paper)”
SPIE Proceedings, Vol. 4287 p. 71-82, In-Plane Semiconductor Lasers V (Editor L.J. Mawst
and R.U. Martinelli), paper [4287-13] (2001).
438. N.N. Ledentsov
“The way to quantum dot lasers2
Semiconductor News 10, 22-30 (2001).
437. N.N. Ledentsov, A. Hoffmann, I.L. Krestnikov, V.M. Ustinov, D. Bimberg and Zh.I. Alferov
“Quantum dot semiconductor lasers”
Proceedings of Commemorative International Symposium for the 40 th Anniversary of the
Foundation of the Osaka Electro-Communication University, 4-5 November 2001, Vol. 1,
pp. 57-70.
436. F. Guffarth, R. Heitz, A. Schliwa, O. Stier, N. N. Ledentsov, A. R. Kovsh, V. M. Ustinov, and D.
Bimberg
“Strain engineering of self-organized InAs quantum dots”
Phys. Rev. B 64, 085305, 7p. (2001)
435. D. Bimberg, M. Grundmann, F. Heinrichsdorff, N. N. Ledentsov, Ch. Ribbat, R. Sellin,
Zh. I. Alferov, P. S. Kop'ev, M. V. Maximov, V. M. Ustinov, A. E. Zhukov and J. A. Lott
“Quantum dot lasers: Theory and experiment”
AIP Conference Proceedings 560, Issue 1, pp. 178-197 (2001).
434. G. É. Cirlin, P. Werner, G. Gösele, B. V. Volovik, V. M. Ustinov, and N. N. Ledentsov
“Optical Properties of Submonolayer Germanium Clusters Formed by Molecular-Beam
Epitaxy in a Silicon Matrix”
Technical Physics Letters 27, Issue 1, pp. 14-16 (2001).
433. A. V. Sakharov, I. L. Krestnikov, N. A. Maleev, A. R. Kovsh, A. E. Zhukov, A. F.
Tsatsul'nikov, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, J. A. Lott, and Zh. I. Alferov
“1.3 µm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on
Them”
Semiconductors 35, Issue 7, pp. 854-859 (2001).
432. A. E. Zhukov, B. V. Volovik, S. S. Mikhrin, N. A. Maleev, A.F. Tsatsul'nikov, E. V. Nikitina,
I. N. Kayander, V. M. Ustinov, and N. N. Ledentsov
“1.55–1.6 µm Electroluminescence of GaAs Based Diode Structures with Quantum Dots”
Tech. Phys. Lett. 27, Issue 9, pp. 734-736 (2001).
431. M. M. Sobolev, I. V. Kochnev, V. M. Lantratov, and N. N. Ledentsov
4
“Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy”
Semiconductors 35, Issue 10, pp. 1175-1181 (2001).
430. N.D. Zakharov, G.E. Cirlin, P. Werner, U. Gösele, G. Gerth, B.V. Volovik, N.N. Ledentsov
and V.M. Ustinov
“Structure and optical properties of periodic submonolayer insertions of Ge in Si grown by
MBE”
Proc. 9th Int. Symp. “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 18-22, 2001, pp. 21-24.
429. G.E. Cirlin, V.A. Egorov, B.V. Volovik, A.F. Tsatsul’nikov, V.M. Ustinov, N.N. Ledentsov,
N.D. Zakharov, P. Werner and U. Gösele
“Effect of growth conditions on optical properties of submonolayer nanoinclusions in a Si
matrix grown by molecular beam epitaxy”
Proc. 9th Int. Symp. “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 18-22, 2001, pp. 36-39.
428. I.P. Soshnikov, N.N. Ledentsov, B.V. Volovik, A. Kovsh, N.A. Maleev, S.S. Mikhrin,
O.M. Gorbenko, W. Passenberg, H. Kuenzel, N. Grote, V.M. Ustinov, H. Krimse,
W. Neumann; P. Werner, N.D. Zakharov, D. Bimberg and Zh.I. Alferov
“Nitrogen-activated phase separation in InGaAsN/GaAs heterostructures grown by MBE”
Proc. 9th Int. Symp. “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 18-22, 2001, pp. 82-85.
427. V.A. Shalygin, L.E. Vorob’ev, A.V. Glukhovskoy, S.N. Danilov, V.Yu. Panevin, D.A. Firsov,
B.V. Volovik, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Yu.M. Shernyakov,
A.F. Tsatsul’nikov, A. Weber and M. Grundmann
“Near and mid infrared spectroscopy of InGaAs/GaAs quantum dot structures”
Proc. 9th Int. Symp. “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 18-22, 2001, pp. 106-109.
426. H. Karl, A. Wenzel, B. Stritzker, R. Claessen, V.N. Strokov, G.E. Cirlin, V.A. Egorov,
N.K. Polyakov, V.N. Petrov, V.M. Ustinov, Zh.I. Alferov
“Stoichiometry and atomic concentration depth profiles in InAs/Si quantum dot systems
by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy”
Proc. 9th Int. Symp. “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 18-22, 2001, pp. 218-221.
425. A.P. Vasil’ev, N.A. Maleev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, I.L. Krestnikov,
V.M. Ustinov, N.N. Ledentsov, and Zh.I. Alferov
“A comparative study of QD and nitrogen-based 1.3 µm VCSELs”
Proc. 9th Int. Symp. “Nanostructures: Physics and Technology” St.Petersburg, Russia,
June 18-22, 2001, pp. 518-521.
424. J.A. Lott, N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov and D. Bimberg
“Continuous wave 1.3 µm InAs-InGaAs quantum dot VCSELs on GaAs substrates”
Abstracts of the 2001 Conference on Lasers & Electro-Optics/Quantum Electronics Lasers
Science, CLEO/QELS 2001, Baltimore Convention Center, 6 May - 11 May, 2001 Baltimore,
MD, p. 137.
423. J.A. Lott, N.N. Ledentsov, V.M. Ustinov and D. Bimberg
“Quantum dot vertical cavity lasers”
Advanced Semiconductor Lasers and Applications/Ultraviolet and Blue Lasers and Their
Applications/Ultralong Haul DWDM Transmission and Networking/WDM Components, 2001
Didgest of the LEOS Summer Topical Meeting, 30-July – 1 August 2001, Copper Mountain
Resort, Copper Mountain, Colorado, paper MA2-3, pp. 17-18, IEEE (2001).
422. P. Borri, S. Schneider, W. Langbein, U. Woggon, A. E. Zhukov, V. M. Ustinov,
N. N. Ledentsov, Zh. I. Alferov, D. Ouyang and D. Bimberg
5
“Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near
1.3-µm-wavelength at room temperature”
Appl. Phys. Lett. 79, pp. 2633-2635 (2001).
421. V.A. Shchukin, N.N. Ledentsov and D. Bimberg
“Spontaneous formation of nanostructures on crystal surfaces”
Physica E: Low-dimensional Systems and Nanostructures 9 (1) pp. 140-148 (2001).
420. I.P. Soshnikov, V.V. Lundin, A.S. Usikov, I.P. Kalmykova, N.N. Ledentsov, A. Rosenauer,
B. Neubauer, D. Gerthsen
“Specifics of MOCVD formation of InxGa1-xN inclusions in a GaN matrix”
Semiconductiors 34 (6) 621-625 (2000)
419. L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg
“Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser”
J. Appl. Phys. 90: (3) pp. 1666-1668 (2001)
418. N.A. Maleev, A.V. Sakharov, C. Moeller, I.L. Krestnikov, A.R. Kovsh, S.S. Mikhrin,
A.E. Zhukov, V.M. Ustinov, W. Passenberg, E. Pawlowski, H. Kunezel, A.F. Tsatsul'nikov,
N.N. Ledentsov, D. Bimberg, Zh.I. Alferov
“1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots”
J. Cryst. Growth 227, pp.1146-1150 (2001).
417. V.M. Ustinov, A.E. Zhukov, N.A. Maleev, A.R. Kovsh, S.S. Mikhrin, B.V. Volovik, Yu.G.
Musikhin, Yu.M. Shernyakov, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, Zh.I.
Alferov, J.A. Lott, D. Bimberg
“1.3 µm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy”
J. Cryst. Growth 227, pp. 1155-1161 (2001).
416. N.A. Maleev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, A.P. Vasil'ev, V.M. Ustinov, N.N.
Ledentsov, Zh.I. Alferov
“Comparative analysis of long-wavelength (1.3 µm) VCSELs on GaAs substrates”
Semiconductors 35 (7), pp. 847-853 (2001).
415. S. Bandyopadhyay, N. Ledentsov, A. Sasaki A
“Foreword”
Journal of Electronic Materials 30 (5) pp. 447-447 (2001)
414. S.A. Maksimenko, G.Y. Slepyan, V.P. Kalosha, N.N. Ledentsov, A. Hoffmann, D. Bimberg
“Size and shape effects in electromagnetic response of quantum dots and quantum dot
arrays”
Materials Science and Engineering B – Solid State Materials for Advanced Technology 82
(1-3), pp. 215-217 (2001).
413. M.V. Maximov, L.V. Asryan, Yu.M. Shernyakov, A.F. Tsatsul'nikov, I.N. Kaiander,
V.V. Nikolaev, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, N.N.
Ledentsov, D. Bimberg
“Gain and threshold characteristics of longwavelength lasers based on InAs/GaAs
quantum dots formed by activated alloy phase separation”
IEEE J. Quantum. Electr. 37, 676 (2001)
412. R. Sellin, N.N. Ledentsov, V.M. Ustinov, V.M: Lantratov, Zh.I. Alferov, D. Bimberg
“Growth and optical characterization of long-wavelength quantum dots for low-threshold
current lasers”
Proc. 6th Intern. Symp. on Advanced Physical Fields, Tsukuba, Japan , p. 49 (2001)
411. B.V. Volovik, A.R. Kovsh, H. Kuenzel, N. Grote, N.A. Cherkashin, Yu.G. Musikhin,
N.N. Ledentsov, D. Bimberg, and V.M. Ustinov
“Optical and structural properties of self-organized InGaAsN/GaAs nanostructures”
Semicond. Sci. and Technol. 16, 186-189 (2001).
6
410. N.A. Maleev, I.L. Krestnikov, A.R. Kovsh, A.V. Sakharov, V.M. Ustinov, S.S. Mikhrin,
W. Passenberg, E. Pawlowski, C. Möller, A.F. Tsatsulnikov, H. Künzel, N.N. Ledentsov,
Zh.I. Alferov, D. Bimberg
“InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in
the 1.25-1.33 µm Wavelength Range”
phys. stat. sol. (b) 224 (3), 803-806 (2001).
409. M.V. Maximov, I.L. Krestnikov, A.G. Makarov, A.E. Zhukov, N.A. Maleev, V.M. Ustinov,
A.F. Tsatsulnikov, Zh.I. Alferov, A.Yu. Chernyshov, N.N. Ledentsov, D. Bimberg,
C.M. Sotomayor Torres
“Large Spectral Splitting of TE and TM Components of QDs in a Microcavity”
phys. stat. sol. (b) 224 (3), 811-814 (2001).
408. F. Guffarth, R. Heitz, A. Schliwa, O. Stier, A.R. Kovsh, V. Ustinov, N.N. Ledentsov,
D. Bimberg
“Electronic Properties of InAs/GaAs Quantum Dots Covered by an In xGa1-xAs Quantum
Well”
phys. stat. sol. (b), 224 (1), 61-65 (2001).
407. V.A. Shchukin, N.N. Ledentsov, A. Hoffmann, D. Bimberg, I.P. Soshnikov, B.V. Volovik,
V.M. Ustinov, D. Litvinov, D. Gerthsen
“Entropy-Driven Effects in Self-Organized Formation of Quantum Dots”
phys. stat. sol. (b), 224 (2), 503-508 (2001).
406. D. Bimberg, M. Grundmann, N.N. Ledentsov, M.H. Mao, Ch. Ribbat, R. Sellin, V.M. Ustinov,
A.E. Zhukov, Zh.I. Alferov, J.A. Lott
“Novel Infrared Quantum Dot Lasers: Theory and Reality”
phys. stat. sol. (b) 224 (3), 787-796 (2001).
405. A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov,
A.E. Zhukov, N.N. Ledentsov, P.S. Kop’ev, and Zh.I. Alferov
“Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots”
phys. stat. sol. (b) 224 (3), 833-837 (2001).
404. L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, and D. Bimberg
“Effect of excited-state transitions on the threshold characteristics of a quanrtum dot
laser”
IEEE J. Quantum Electron. 37(3), 418-425 (2001)
403. R. Sellin, Ch. Ribbat, M. Grundmann, N.N. Ledentsov, and D. Bimberg,
"Close to ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers".
Appl. Phys. Lett. 78 (9), 1207-1209 (2001).
402. A.F. Tsatsul’nikov, I.L. Krestnikov, W.L. Lundin, A.V. Sakharov, D.A. Bedarev, E.E. Zavarin,
A.S. Usikov, B.Ya. Ber, V.V. Tret’yakov, Zh.I. Alferov, Yu.G. Musikhin, I.P. Soshnikov,
D. Litvinov, A. Rosenauer, D. Gerthsen, N.N. Ledentsov, A. Hoffmann; D. Bimberg,
T. Riemann, J. Christen
“Formation of GaAsN nanoinsertions in a GaN matrix by MOVPE”
in: Proc. 25th Internat. Conf. on the Physics of Semiconductors (ICPS-25), Osaka 2000, ed.
by N. Miura and T.Ando (Springer Proceedings in Physics, Springer, Berlin 2001), pp.395396.
401. I.L. Krestnikov, H. Born, R. Heitz, A.F. Tsatsul’nikov, B.V. Volovik, M.V. Maximov,
Yu.G. Musikhin, A.R. Kovsh, N.A. Maleev, A.E. Zhukov, V.M. Ustinov, N.N. Ledentsov,
A. Hoffmann, Zh.I. Alferov, and D. Bimberg
“Time-resolved studies of large InGaAs/GaAs quantum dots”
in: Proc. 25th Internat. Conf. on the Physics of Semiconductors (ICPS-25), Osaka 2000, ed.
by N. Miura and T.Ando (Springer Proceedings in Physics, Springer, Berlin 2001), pp. 12411242.
7
400. R.A. Abram, S. Brandt, M.A. Kaliteevski, V.V. Nikolaev, M.V. Maximov, N.N. Ledentsov, C.M.
Sotomayor Torres, A.V. Kavokin
“Light-exciton coupling in semiconductor microcavities of cyllindrical and spherical
symmetry”
in: Proc. 25th Internat. Conf. on the Physics of Semiconductors (ICPS-25), Osaka 2000, ed.
by N. Miura and T.Ando (Springer Proceedings in Physics, Springer, Berlin 2001), pp. 699700.
399. N.N. Ledentsov, V.A. Shchukin, V.M. Ustinov, Yu.G. Musikhin, A.E. Zhukov, A.R. Kovsh,
B.V. Volovik, and D. Bimberg
“Reversibility of the Island shape and density in Stranski-Krastanow growth”
in: Proc. 25th Internat. Conf. on the Physics of Semiconductors (ICPS-25), Osaka 2000, ed.
by N. Miura and T. Ando (Springer Proceedings in Physics, Springer, Berlin 2001) pp. 375376.
398. A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov,
A.E. Zhukov, N.N. Ledentsov, P.S. Kop’ev and Zh.I. Alferov
“Electrically and optically pumped mid-infrared emission from quantum dots”
in: Proc. 25th Internat. Conf. on the Physics of Semiconductors (ICPS-25), Osaka 2000, ed.
by N. Miura and T. Ando (Springer Proceedings in Physics, Springer, Berlin 2001) pp. 11571158.
397. I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
“Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth,
Properties, Devices (review)”
phys. stat. sol. (a) 183 (2), 207-233 (2001)
396. I.L. Krestnikov, N.A. Cherkashin, D.S. Sizov, D.A. Bedarev, I.V. Kochnev, V.A. Lantratov,
N.N. Ledentsov
“InGaAs Nanodomains Formed in situ on the Surface of (Al,Ga)As”
Pis’ma v Zh.Tekh.Fiz. 27(6), 34-39 (2001) – Tecn. Phys. Lett. 27, 233-235 (2001).
395. A. Weber, M. Grundmann and N.N. Ledentsov
“Room-temerature long wavelength (  =13.3 µm) unipolar quantum dot intersubband
laser” (comment)
Electronics Lett. 37, 96-97 (2001).
2000
394. N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V. M. Ustinov, A. E. Zhukov,
M.V. Maximov, Zh.I. Alferov and J. A. Lott
“Quantum-Dot Heterostructure Lasers“ (invited paper)
IEEE Journal on Selected Topics in Quantum Electronics 6, 439-451 (2000).
393. B. V. Volovik, D. S. Sizov, A. F. Tsatsul'nikov, Yu. G. Musikhin, N. N. Ledentsov, V. M.
Ustinov, V. A. Egorov, V. N. Petrov, N. K. Polyakov, and G. É. Tsyrlin
“The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the
Submonolayer Epitaxy in the Spectral Range of 1.3–1.4 µm”
Semiconductors, Vol. 34, p.1316-1320 (2000)
393. D. Bimberg, N.N. Ledenstov, R. Sellin, Ch. Ribbat, M. Mao, M. Grundmann, V.M. Ustinov,
A.E. Zhukov, A.R. Kovsh, Zh.I. Alferov
“Quantum dot lasers”
Proc. LEOS 2000 IEEE 13th Annual Meeting, Rio Grande, Puerto Rico , p. 302 (2000)
392. A.F. Andreev, E.P. Velikhov, V.E. Golant, Y.V. Gulyaev, B.P. Zakharchenya, L.V. Keldysh,
P.S. Kopev, N.N. Ledentsov, Y.A. Osipyan, A.M. Prokhorov, R.A. Suris
8
“Zhores Ivanovich Alferov (on his seventieth birthday)”
Uspekhi Fizicheskih Nauk 170 (3), pp. 349-350 (2000).
391. A.F. Tsatsul’nikov, A.R. Kovsh, A.E. Zhukov, Yu.G. Musikhin, V.M. Ustinov, N.A. Bert, P.S.
kop’ev, Zh.I. Alferov, A.M. Mintairov, J.L. Merz, N.N. Ledentsov, and D. Bimberg,
“Volmer-Weber and Stranski-Krastanow InAs-(Al,Ga)As quantum dots emitting at 1.3 µm”
J. Appl. Phys., Vol. 88, pp. 6272-6275 (2000).
390. M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, Ch. Ribbat, D. Bimberg, A.E. Zhukov,
A.R. Kovsh, M.V. Maximov, Yu.M. Shernyakov, D.A. Lifshits, V.M. Ustinov and Zh.I. Alferov
“Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications”
Jpn. J. Appl. Phys. 39, part 1, pp. 2341-2343 (2000)
389. D.A. Livshits, I.V. Kochnev, V.M. Lantratov, N.N. Ledentsov, T.A. Nalet, I.S. Tarasov, and
Zh.I. Alferov
“Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes”
Electron. Lett. 36 (22), 1848-1849 (2000).
388. M. V. Maximov, A. F. Tsatsul'nikov, D. S. Sizov, Yu. M. Shernyakov, A. E. Zhukov, A. R.
Kovsh, S. S. Mikhrin, V. M. Ustinov, Zh.I. Alferov, N. N. Ledentsov, D. Bimberg, T. Maka and
C. M. Sotomayor Torres
“Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in
quantum dot arrays formed by activated alloy phase separation”
Nanotechnology 11 (4), 309-313 (2000)
387. V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, N.A. Maleev, B. V. Volovik, Yu. G.
Musikhin, Yu. M. Shernyakov, E.Yu. Kondat'eva, M. V. Maximov, A. F. Tsatsul'nikov,
N.N. Ledentsov, Zh.I. Alferov, J. A. Lott and D. Bimberg
“Long-wavelength quantum dot lasers on GaAs substrates”
Nanotechnology 11 (4), 397-400 (2000)
386. S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, Yu. M. Shernyakov, I.
P. Soshnikov, D. A. Livshits, I. S. Tarasov, D.A. Bedarev, B. V. Volovik, M. V. Maximov, A. F.
Tsatsul'nikov, N.N. Ledentsov, P. S. Kop'ev, D. Bimberg and Zh. I. Alferov
“0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots”
Semicond. Sci. Technol. 15 (11) 1061-1064 (2000)
385. D.A. Livshits, A.Yu. Egorov, I.V. Kochnev, V.A. Kapitonov, V.M. Lantratov, N.N. Ledentsov,
T.A. Nalet, I.S. Tarasov,
“Record power characteristics of InGaAs/AlGaAs/GaAs heterostructures”
Fiz. i Tekh. Poluprovodn. (Semiconductors) 35, 380-384 (2000).
384. M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. S. Sizov, Yu.M. Shernyakov,
I. N. Kaiander, A. E. Zhukov, A. R. Kovsh, S.S. Mikhrin, V. M. Ustinov, Zh. I. Alferov R. Heitz,
V. A. Shchukin, N.N. Ledentsov, D. Bimberg, Yu. G. Musikhin and W. Neumann
“Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy
grown on InAs stressors”
Phys. Rev. B 62, 16671-16680 (2000).
383. N. N. Ledentsov and D. Bimberg
"Birth of Quantum dot devices: Paradigm changes",
Semiconductor News Vol. 9 (1), 37-49 (2000).
382. V.A. Shchukin, N.N. Ledentsov, V.M. Ustinov, Yu.G. Musikhin, V.B. Volovik, A. Schliwa,
O. Stier, R. Heitz, and D. Bimberg
“New tools to control morphology of self-organized quantum dot nanostructures”
in “Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin
Films” Eds.: J. Mireck Millunchik, A.L. Barabási, N.A. Modine, E.D. Jones, Mat. Res. Soc.
Symp. Proc. Vol. 618, pp. 79-90 (2000).
9
381. D.Bimberg and N.N. Ledentsov
“Quantum Dot Lasers: From Promise to Reality” (invited paper)
Proceedings of SPIE “Physics and Simulation of Optoelectronic Devices, 24-28 January
2000 San Jose, USA, R.H. Binder, P. Blood, and M. Osinski, Eds.,Vol. 3944, pp. 790-801.
380. L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris and D. Bimberg
“Effect of excited-state transitions on the threshold characteristics of a quantum dot
laser”
Proceedings of SPIE “Physics and Simulation of Optoelectronic Devices, 24-28 January
2000 San Jose, USA, R.H. Binder, P. Blood, and M. Osinski, Eds., Vol. 3944, pp. 823-834.
379. N.D. Zakharov, P. Werner, U. Gösele, R. Heitz, D. Bimberg, N.N. Ledentsov, V.M. Ustinov,
B.V. Volovik, Zh.I. Alferov, N.K. Polyakov, V.N. Petrov, V.A. Egorov, G.E. Cirlin
“Structure and optical properties of Si/InAs/Si layers grown by MBE on Si substrate at
different temperatures”
in “Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin
Films” Eds.: J. Mireck Millunchik, A.L. Barabási, N.A. Modine, E.D. Jones, Mat. Res. Soc.
Symp. Proc. Vol. 618, pp. 249-254 (2000).
378. V.A. Shchukin, N.N. Ledentsov, and D. Bimberg
“Spontaneous Formation of Arrays of Strained Islands: Thermodynamics versus Kinetics”
in “Self-Organized Processes in Semiconductir Alloys” Eds.: A. Mascarenhas,
D. Follstaedt, T. Suzuki, B. Joyce, Mat. Res. Soc. Symp. Proc. Vol. 583, pp. 23-31 (2000).
377. G.E. Cirlin, V.A. Egorov, V.N. Petrov, A.O. Golubok, N.I. Komyak, N.K. Polyakov,
Yu.B. Samsonenko, D.V. Denisov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov,
R. Heitz, D. Bimberg, N.D. Zakharov, P. Werner, U. Gösele
“InAs Nanostructures in a Silicon Matrix: Growth and Properties”
in “Self-Organized Processes in Semiconductir Alloys” Eds.: A. Mascarenhas,
D. Follstaedt, T. Suzuki, B. Joyce, Mat. Res. Soc. Symp. Proc. Vol. 583, pp. 51-56 (2000).
376. V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, Yu. G. Musikhin,
A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, M.V. Maximov, D.A. Livshits, N.A. Bert,
P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, and D. Bimberg
“MBE Growth, Structural and Optical Characterization of InAs/InGaAlAs Self-Organized
Quantum Dots”
in “Self-Organized Processes in Semiconductir Alloys” Eds.: A. Mascarenhas,
D. Follstaedt, T. Suzuki, B. Joyce, Mat. Res. Soc. Symp. Proc. Vol. 583, pp. 57-62 (2000).
375. J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh,
M.V. Maximov, B.V. Volovik, Zh.I. Alferov, and D. Bimberg
“Room temperature continuous wave InAs-InGaAs quantum dot VCSELs on GaAs
substrates emitting at 1.3 µm”
Abstracts of the 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 13-16
November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico, p. 304-305
374. J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh,
M.V. Maximov, B.V. Volovik, Zh.I. Alferov, and D. Bimberg
“InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm”
Electronics Lett. 36, 1384-1385 (2000).
373. L. E. Vorobjev, D. A. Firsov, V. A. Shalygin, Zh. I. Alferov, N.N. Ledentsov, V. M. Ustinov,
Yu. M. Shernyakov and V. N. Tulupenko
„Emission of mid-infrared radiation and intersubband population inversion in near-infrared
laser QW structures“
Physica E: Low-dimensional Systems and Nanostructures 7 (1-2), 241-244 (2000).
372. E. Schomburg, S. Brandl, S. Winnerl, K. F. Renk, N. N. Ledentsov, V.M. Ustinov, A. Zhukov,
P. S. Kop'ev, H.-W. Hübers, J. Schubert, H. P. Röser, A. Rosenauer, D. Litvinov, D.
Gerthsen and J. M. Chamberlain
10
„Miniband transport in a GaAs/AlAs superlattice with submonolayer barriers in a static
and THz electric field“
Physica E: Low-dimensional Systems and Nanostructures 7 (3-4), 814-818 (2000).
371. R. Heitz, N. N. Ledentsov, D. Bimberg, A. Yu. Egorov, M.V. Maximov, V. M. Ustinov, A. E.
Zhukov, Zh. I. Alferov, G. E. Cirlin, I. P. Soshnikov, N. D. Zakharov, P. Werner and U.
Gösele
„Optical properties of InAs quantum dots in a Si matrix“
Physica E: Low-dimensional Systems and Nanostructures 7 (3-4), 317-321 (2000).
370. M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. A. Bedarev, A.E. Zhukov, A. R. Kovsh,
N. A. Maleev, V.M. Ustinov, P. S. Kop'ev, Zh.I. Alferov, R. Heitz, N. N. Ledentsov and D.
Bimberg
„Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs
stressors“
Physica E: Low-dimensional Systems and Nanostructures 7 (3-4), 326-330 (2000).
369. A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, D. A. Livshits, P. S. Kop'ev, Z. I. Alferov, N. N.
Ledentsov and D. Bimberg
„3.5 W continuous wave operation from quantum dot laser“
Materials Science and Engineering B 74 (1-3), 70-74 (2000).
368. D. Bimberg, F. Heinrichsdorff, N. N. Ledentsov and V. A. Shchukin
“Self-organized growth of semiconductor nanostructures for novel light emitters“
Appl. Surf. Sci. 159-160, 1-7(2000).
367. I. P. Soshnikov, V. V. Lundin, A. S. Usikov, I. P. Kalmykova, N. N. Ledentsov, A. Rosenauer,
B. Neubauer, and D. Gerthsen
“Specifics of MOCVD Formation of InxGa1–xN Inclusions in a GaN Matrix”
Semiconductors 34 (6), 621-625 (2000).
366. V. N. Petrov, N. K. Polyakov, V. A. Egorov, G. E. Cirlin, N. D. Zakharov, P. Werner, V. M.
Ustinov, D. V. Denisov, N.N. Ledentsov, and Zh. I. Alferov
“Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix”
Semiconductors 34 (7), 810-814 (2000)
365. V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, B.V. Volovik,
Yu.G. Musikhin, Yu.M. Shernyakov, E.Yu. Kondrat’eva, M.V. Maximov, A.F. Tsatsul’nikov,
N.N. Ledentsov, Zh.I. Alferov, J.A. Lott and D. Bimberg
“Longwavelength quantum dot lasers on GaAs substrates”
Proceeding of the 8th Int. Symp. “Nanostructures: Physics and Technology”
St. Petersburg, Russia, June 19-23, 2000, Ioffe Institute, 2000.
364. M.V. Maximov, A.F. Tsatsul’nikov, A.E. Zhukov, N.A. Maleev, V.M. Ustinov, Zh.I. Alferov,
N.N. Ledentsov, D. Bimberg, T. Maka, and C.M. Sotomayor Torres
“Carrier relaxation in InGaAs-GaAs quantum dots formed by activated alloy phase
separation”
Proceeding of the 8th Int. Symp. “Nanostructures: Physics and Technology”
St. Petersburg, Russia, June 19-23, 2000, Ioffe Institute, 2000, pp.371-374
363. I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, D. Bimberg, D.A. Bedarev, I.V. Kochnev,
V.M. Lantratov, N.A. Cherkashin, Yu.G. Musikhin, and Zh.I. Alferov
“Formation of defect-free InGaAs-GaAs quantum dots for 1.3 µm spectral range grown by
metal-organic chemical vapor deposition”
Proceeding of the 8th Int. Symp. “Nanostructures: Physics and Technology”
St. Petersburg, Russia, June 19-23, 2000, Ioffe Institute, 2000, pp.355-358
362. N.D. Zakharov, P. Werner, U. Gösele, V.M. Ustinov, G.E. Cirlin, B.V. Volovik, N.K. Polyakov,
V.N. Petrov, V.A. Egorov, N.N. Ledentsov, Zh.I. Alferov, R. Heitz and D. Bimberg
“Optical properties and structure of Si/InAs/Si layers grown by MBE”
11
Proceeding of the 8th Int. Symp. “Nanostructures: Physics and Technology”
St. Petersburg, Russia, June 19-23, 2000, Ioffe Institute, 2000, pp. 322-325
361. S.A. Maksimenko, G.Ya. Slepyan, N.N. Ledentsov, V.P. Kalosha, A. Hoffmann and
D. Bimberg
“Light confinement in quantum dots”
Proceeding of the 8th Int. Symp. “Nanostructures: Physics and Technology”
St. Petersburg, Russia, June 19-23, 2000, Ioffe Institute, 2000, pp. 219-223
360. A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, E.E. Zavarin, A.S. Usikov, A.F. Tsatsul’nikov,
N.N. Ledentsov, A. Hoffmann, D. Bimberg, and Zh.I. Alferov
“Effect of annealing on phase separation in ternary III-N alloys”
Proceeding of the 8th Int. Symp. “Nanostructures: Physics and Technology”
St. Petersburg, Russia, June 19-23, 2000, Ioffe Institute, 2000, pp. 216-218
359. B.V. Volovik, A.R. Kovsh, W. Passenberg, H. Kuenzel, Yu.G. Musikhin, V.A. Odnoblyudov,
N.N. Ledentsov, D. Bimberg and V.M. Ustinov
“Optical properties of InGaAsN/GaAs quantum well and quantum dot structures for
longwavelength emission”
Proceeding of the 8th Int. Symp. “Nanostructures: Physics and Technology”
St. Petersburg, Russia, June 19-23, 2000, Ioffe Institute, 2000, pp. 148-151.
358. A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.A. Odnoblyudov, V.M. Ustinov,
Yu.M. Shernyakov, E.Yu. Kondrat’eva, D.A. Livshits, I.S. Tarasov, N.N. Ledentsov,
P.S. Kop’ev, Zh.I. Alferov and D. Bimberg
“Power conversion efficiency in a quantum dot based laser”
Proceeding of the 8th Int. Symp. “Nanostructures: Physics and Technology”
St. Petersburg, Russia, June 19-23, 2000, Ioffe Institute, 2000, pp. 39-41
357. A. F. Tsatsul'nikov, I. L. Krestnikov, W. V. Lundin, A. V. Sakharov, A.P. Kartashova,
A.S. Usikov, Zh I Alferov, N N Ledentsov, A. Strittmatter, A. Hoffmann, D. Bimberg,
I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen and A. Plaut
“Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour
deposition”
Semicond. Sci. Technol. 15 (7) 766-769 ( 2000)
356. M. A. Kaliteevski, S. Brand, and R. A. Abram, V. V. Nikolaev, M.V. Maximov and
N. N. Ledentsov, C. M. Sotomayor Torres, A.V. Kavokin
“Exciton polaritons in a cylindrical microcavity with an embedded quantum wire”
Physical Review B 61 (20), 13791-13797 (2000).
355. M.V. Maximov, N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, and D. Bimberg
“GaAs-Based 1.3 µm InGaAs Quantum Dot Lasers: A Status Report”
Journal of Electronic Materials 29 (5), 476 – 486 (2000).
354. M.V. Maximov, I.L. Krestnikov, Yu.M. Shernyakov, A.E. Zhukov, N.A. Maleev,
Yu.G. Musikhin, V.M. Ustinov, Zh.I. Alferov, A.Yu. Chernyshov, N.N. Ledentsov, D.
Bimberg, T. Maka, and C.M. Sotomayor Torres
“InGaAs-GaAs Quantum Dots for Applications in Long Wavelength (1.3 µm) Resonant
Vertical Cavity Enhanced Devices”
Journal of Electronic Materials 29 (5), 487 – 493 (2000).
353. S.A. Maksimenko,G.Ya. Slepyan, V.P. Kalosha, S.V. Maly, N.N. Ledentsov, J. Herrmann, A.
Hoffmann, D. Bimberg, and Zh.I. Alferov
“Electromagnetic Response of 3D Arrays of Quantum Dots”
Journal of Electronic Materials 29 (5), 494 – 503 (2000).
352. N.N. Ledentsov, M.V. Maximov, D. Bimberg, T. Maka, C.M. Sotomayor Torres, I.V. Kochnev,
I.L. Krestnikov, V.M. Lantratov, N.A. Cherkashin, Yu.M. Musikhin and Zh.I. Alferov
12
“1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by
metal-organic chemical vapour deposition”
Semicond. Sci. and Technol. 15 (6), 604-607 (2000).
351. S. A. Maksimenko, G. Ya. Slepyan, N. N. Ledentsov, V. P. Kalosha, A. Hoffmann and D.
Bimberg
“Light confinement in a quantum dot”
Semicond. Sci. and Technol. 15 (6), 491-496 (2000).
350. N.N. Ledentsov, I.L. Krestnikov, M. Straßburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl,
A. Hoffmann, D. Bimberg, A.V. Sakharov, W.V. Lundin, A.S. Usikov, Zh.I. Alferov,
D. Litvinov, A. Rosenauer and D. Gerthsen
“Quantum dots formed by ultrathin insertions in wide-gap matrices”
Thin Solid Films 367 (1-2), 40-47 (2000)
349. D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, V.M. Ustinov, A.E. Zhukov,
A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, B.V. Volovik, A.F. Tsatsul'nikov, P.S. Kop'ev
and Zh.I. Alferov
“Quantum dot lasers: breakthrough in optoelectronics”
Thin Solid Films 367 (1-2), 235-249(2000)
348. N.N. Ledentsov, D. Bimberg, V.M. Ustinov, J.A. Lott, and Zh.I. Alferov
“Quantum Dot Lasers: The Promises Come to Reality”
Memoirs of The Institute of Scientific and Industrial Research, Osaka, Vol. 57, pp. 80-87
(March 2000).
347. N. D. Zakharov, P. Werner, U. Gösele, R. Heitz, D. Bimberg, N.N. Ledentsov, V. M. Ustinov,
B. V. Volovik, Zh. I. Alferov, N.K. Polyakov, V. N. Petrov, V. A. Egorov, and G. E. Cirlin
“Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on
Si substrate”
Appl. Phys. Lett. 76, 2677-2679 (2000).
346. V.M. Ustinov, A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov,
I.S. Tarasov, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov and D. Bimberg
“High output power CW operation of a quantum dot laser”
Inst. Phys. Conf. Ser. No 166, Chapter 4, Proceedings of the 26th International Conference
on Compound Semiconductors, Berlin, Germany, August 22-26, 1999. Eds.: K.H. Ploog,
K. Tränkle, and G. Weimann, pp. 277-280 (2000).
345. A.F. Tsatsul’nikov, D.A. Bedarev, N.A. Bert, A.R. Kovsh, P.S. Kop’ev, N.A. Maleev,
Yu.G. Musikhin, M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov and Zh.I. Alferov
“1.3 µm emission from quantum dots formed by 2 ML InAs deposition in a wide band gap
(1.5-1.7 eV) InGaAlAs matrix”
Inst. Phys. Conf. Ser. No 166, Chapter 4, Proceedings of the 26th International Conference
on Compound Semiconductors, Berlin, Germany, August 22-26, 1999. Eds.: K.H. Ploog,
K. Tränkle, and G. Weimann, pp. 261-264 (2000).
344. B.V. Volovik, A.R. Kovsh, W. Passenberg, H. Kuenzel, N.N. Ledenstov and V.M. Ustinov
“Long wavelength emission in InGaAsN/GaAs quantum well heterostructures”
Pis’ma v Zhurnal Tekh. Fiz. 26, No 10, 88-94 (2000). – Tech. Phys. Lett. 26, 443-445 (2000).
343. A. F. Tsatsul'nikov, B. V. Volovik, D. A. Bedarev, A. E. Zhukov, A.R. Kovsh, N. N.
Ledentsov, M. V. Maksimov, N.A. Maleev, Yu.G. Musikhin, V. M. Ustinov, N. A. Bert, P. S.
Kop'ev, D. Bimberg, and Zh. I. Alferov
“Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum
Dots”
Semiconductors 34, 323-326 (2000) Fiz. Tekh. Poluprovodn. 34 (3), 330-333 (2000).
13
342. I. L. Krestnikov, A. V. Sakharov, W. V. Lundin, Yu. G. Musikhin, A.P. Kartashova, A. S.
Usikov, A. F. Tsatsul'nikov, N. N. Ledentsov, Zh. I. Alferov, I. P. Soshnikov, E. Hahn, B.
Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, D. Bimberg and Zh.I. Alferov
“Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum
Dots”
Semiconductors 34, 481-487 (2000).
341. A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, N. A. Maleev, V.A. Odnoblyudov, V. M. Ustinov,
Yu. M. Shernyakov, E.Yu. Kondrat'eva, D. A. Livshits, I. S. Tarasov, N. N. Ledentsov, P.S.
Kop'ev, Zh. I. Alferov, and D. Bimberg
Power Conversion Efficiency of Quantum Dot Laser Diodes
Semiconductors 34, 609-613 (2000).
340. N. A. Maleev, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, D. A. Bedarev,
B. V. Volovik, I. L. Krestnikov, I. N. Kayander, V.A. Odnoblyudov, A. A. Suvorova,
A. F. Tsatsul'nikov, Yu. M. Shernyakov, N. N. Ledentsov, P. S. Kop'ev and D. Bimberg
“Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the
1.3 µm Wavelength Range”
Semiconductors 34, 594-597 (2000).
339. D. Litvinov, A. Rosenauer, D. Gerthsen, and N. N. Ledentsov
“Character of the Cd distribution in ultrathin CdSe layers in a ZnSe matrix”
Phys. Rev. B 61, 16819-16826 (2000).
338. S. Winnerl, E. Schomburg, S. Brandl, F. Klappenberger, K.F. Renk, A.F.G. van der Meer,
J.N. Hovenier, R. van Es, T.O. Klaassen, A.A. Ignatov, N.N. Ledentsov, V.M. Ustinov, A.E.
Zhukov, A.R. Kovsh, P.S. Kop'ev
“A superlattice detector as a fast direct detector and autocorrelator for terahertz
radiation”,
SPIE 44th Annual Meeting , Conference on Terahertz and Gigahertz Photonics, 18-23 July
1999, Denver (Col) U.S.A. Proc. SPIE Vol. 3795, p. 116-125, Terahertz and Gigahertz
Photonics, R. Jennifer Hwu; Ke Wu; Eds.
337. G.E. Cirlin, N.K. Polyakov, V.N. Petrov, V.A. Egorov, Yu.B. Samsonenko, D.V. Denisov, V.M.
Busov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg,
N.D. Zakharov, P. Werner
“Effect of growth conditions of InAs nanoislands formation on Si(100) surface”
Czechoslovak Journal of Physics 49, pp. 1547-1552(1999).
337. M. Paillard, X. Marie, E. Vanelle, T. Amand, V.K. Kalevich, V.M. Ustinov, N.N. Ledentsov
“Strictly Resonant Excitation of Carriers in Self-Assembled InAs/GaAs Quantum Dots”
phys. stat. sol. (a), 178, 349-353 (2000).
336. M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, A.E. Zhukov, A.R. Kovsh,
A.Yu. Shernyakov, Yu.G. Musikhin, N.N. Ledentsov, and D. Bimberg,
“Optical properties of quantum dots formed by activated spinodal decomposition for
GaAs-based lasers emitting at ~1.3 µm”
Microelectronic Engineering 51-52, 61-72 (2000).
335. M.M. Sobolev, I.V. Kochnev, V.M. Lantratov, N.A. Bert, N.A. Cherkashin, N.N. Ledentsov,
D.A. Bedarev
“Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional
islands”
Semiconductors - Fiz. Tekh. Poluprovodn. 34 (2), 200-210 (2000).
334. V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, A.F. Tsatsul’nikov,
M.V. Maximov, B.V. Volovik, D.A. Bedarev, D.A. Lifshits, P.S. Kop’ev, Z.I. Alferov,
L.E. Vorob’ev, D.A. Firsov, A.A. Suvorov, I.P. Soshnikov, P. Werner, N.N. Ledentsov, and
D. Bimberg
14
“Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates”
Microelectronics Journal 31, 1-7 (2000)
1999
333. N.N. Ledentsov
“Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy”
Springer Tracts in Modern Physics 156, Springer, Berlin, 81 p. (1999).
332. D. Bimberg, M. Grundmann and N.N. Ledentsov
”Quantum Dot Heterostructures”
John Wiley & Sons, Chichester, 328 p. (1999).
331. N.N. Ledentsov
“Quantum Dot Lasers: Experimental Results and Future Trends”
in "Future Trends in Microelectronics", Ed. by: S. Luryi, J. Xu, A. Zaslavsky, John Wiley &
Sons, pp. 223-236, 1999
330. Zh. I. Alferov and N. N. Ledentsov
“Quantum dots heterostructure lasers: state of the art and future prospects” (plenary
paper).
SPIE Proceedings Vol. 3625 Physics and Simulation of Optoelectronic Devices VII,
Editor(s): P. Blood, A. Ishibashi; M. Osinski, pp.2-9 (1999).
329. P. Yu, W. Langbein, K. Leosson, J. M. Hvam , N. N. Ledentsov, D. Bimberg, V. M. Ustinov,
A. Yu. Egorov, A. E. Zhukov, A.F. Tsatsul'nikov, and Yu. G. Musikhin
Optical anisotropy in vertically coupled quantum dots
Phys. Rev. B 60 (24), 16680-16685 (1999)
328. M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. A. Bedarev, A. Yu. Egorov, A. E.
Zhukov, A. R. Kovsh, N. A. Bert, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov, N. N.
Ledentsov and D. Bimberg, I. P. Soshnikov and P. Werner
“Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral
range up to 1.7 µm”
Appl. Phys. Lett. 75, pp. 2347-2349 (1999).
327. L.E. Vorobjev, D.A. Firsov, V.A. Shalygin, V.N. Tulupenko, Yu. M. Shernyakov, A.Y. Egorov,
A. E. Zhukov, A. R. Kovsh, P.S. Kop'ev, I.N- Kochnev, N.N. Ledentsov, M.V. Maximov,
V.M. Ustinov, Zh. I. Alferov
“Spontaneous IR intersublevel emission from quantum dots conditioned by main
interband lasing”
Proc. SPIE Vol. 3890, p. 27-34, Fourth International Conference on Material Science and
Material Properties for Infrared Optoelectronics, Fiodor F. Sizov; Ed. (1999).
327. N.N. Ledentsov, Zh.I. Alferov I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, I.P. Soshnikov,
A.F. Tsatsul’nikov, D. Bimberg, and A. Hoffmann
“Vertical-cavity surface-emitting lasers using InGaN quantum dots”
Compound Semiconductor 5 (9), November/December 1999, pp. 61-64 (1999).
326. J. Erland, P. Yu, S. I Bozhevolnyi, J. M. Hvam, and N. N. Ledentsov.
"Second harmonic spectroscopy of semiconductor nanostructures"
Proceedings CLEO/QELS'99, paper QThJ5 (Baltimore, May 1999).
325. A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov,
Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, J. Holst, A. Hoffmann,
D. Bimberg, I.P. Soshnikov and D. Gerthsen
“Optical properties of structures with single and multiple InGaN insertions in a GaN
matrix”
15
phys. stat. sol. (b) 216, pp. 435- 440 (1999).
324. I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov,
Zh.I. Alferov, A. Hoffmann, D. Bimberg
“Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room
temperature”
phys. stat. sol. (b) 216, pp. 511-515 (1999).
323. W.V. Lundin, A.S. Usikov, A.V. Sakharov, V.V. Tretyakov, D.V. Poloskin, N.N. Ledentsov,
and A. Hoffmann
“Growth and characterization of thick Si-doped AlGaN epilayers on sapphire substrates”
phys. stat. sol. (b) 216, pp. 379-384 (1999).
322. M.V. Maximov, Yu.M. Shernyakov, I.N. Kaiander, D.A. Bedarev, E.Yu. Kondrat’eva,
P.S. Kop’ev, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, A.F. Tsatsul’nikov, V.M. Ustinov,
B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg
“Single transverse mode operation of long wavelength (~1.3 m) quantum dot laser”
Electonics Letters 35(23) 2038-2039 (1999)
321. A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, D.A. Lifshits,
I.S. Tarasov, D.A. Bedarev, M.V. Maximov, A.F. Tsatsul’nikov, I.P. Soshnikov, P.S. Kop’ev,
Zh.I. Alferov, N.N. Ledentsov, and D. Bimberg
“3.9 W CW Power from Sub-monolayer Quantum Dot Diode Laser”
Electronics Letters 35 (21), 1845-1847 (1999).
320. A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Yu.M. Shernyakov, S.S. Mkhrin, N.A. Maleev,
E.Yu. Kondrat’eva, D.A. Livshots, M.V. Maximov, B.V. Volovik, D.A. Bedarev,
Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop’ev and D. Bimberg,
“Continuous-wave operation of long-wavelength quantum dot diode laser on a GaAs
substrate”
IEEE Photonics Technology Letters 11 (11), 1345-1347 (1999).
319. A.R. Kovsh, A.E. Zhukov, D.A. Lifshits, A.Yu. Egorov, V.M. Ustinov, M.V. Maximov,
Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov and D. Bimberg
“3.5 W CW operation of quantum dot laser”
Electronics Letters 35 (14), 1161-1163 (1999).
318. A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S Mikhrin, V.M. Ustinov, A.F. Tsatsul’nikov,
M.V. Maximov, B.V. Volovik, D.A. Bedarev, Yu.M. Shernyakov, P.S. Kop’ev, Zh.I. Alferov,
N.N. Ledentsov and D. Bimberg
“Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs
substrates”
Appl. Phys. Lett. 75 (13), 1926-1928 (1999).
317. Yu.M. Shernyakov, D.A. Bedarev, E.Yu. Kondrat’eva, P.S. Kop’ev, A.R. Kovsh, N.A. Maleev,
M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov,
D. Bimberg
“1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal
decomposition”
Electronics Letters 35 (11), 898 (1999).
316. A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin,
M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann and D. Bimberg.
Surface-Mode Lasing from Stacked InGaN Insertions in a GaN Matrix”
Appl. Phys. Lett. 74(26), 3921 (1999).
315. D. Bhattacharyya, E.A. Avrutin, A.C. Bryce, J.H. Marsh, D. Bimberg, F. Heinrichsdorff,
V.M. Ustinov, S.V. Zaitsev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, A.I. Onishenko and
E.P. O’Reily
“Spectral and Dynamic Properties of InAs-GaAs Self-Organized Quantum Dot Lasers
16
IEEE Journal of Selected Topics in Quantum Electronics 5, 648-657 (1999).
314. M. Strassburg, R. Heitz, V. Türk, S. Rodt, U.W. Pohl, A. Hoffmann, D. Bimberg,
I.L. Krestnikov, V.A. Shchukin, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer,
and D. Gerthsen
“Three-dimensionally confined excitons and biexcitons in submonolayer CdSe/ZnSe
superlattices”
J. Electron. Mater. 28, 506-514 (1999).
313. P.N. Brunkov, A.R. Kovsh, Yu.G. Musikhin, N.N Ledentsov, S.G. Konnikov, A. Polimeni,
A. Patané, P.C. Maan, L. Eaves, and C.M.A. Kapteyn
“Emission of Elecrons from the Ground and Excited States of Self-Organized InAs/GaAs
Quantum Dot Structures”
J. Electron. Mater. 28 (5), 486-490 (1999).
312. A. V. Sakharov, V. V. Lundin, V. A. Semenov, A. S. Usikov, N. N. Ledentsov,
A.F. Tsatsul'nikov, and M. V. Badakova
Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
Tech. Phys. Lett. 25(6), 462-465
Pis’ma v Zh. Tekh. Fiz. 25 (12), 1-9
311. A. R. Kovsh, D. A. Livshits, A. E. Zhukov, A. Yu. Egorov, M. V. Maksimov, V. M. Ustinov,
I. S. Tarasov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
“Quantum-dot injection heterolaser with 3.3 W output power”
Tech. Phys. Lett. 25(6), 438-439
310. N. N. Ledentsov
“Quantum dot lasers: the birth and future trends”
Semiconductors 33 (9), 946-950 (1999) - Fiz. Tekh. Poluprovodn. 33 (9), 1039-1043 (1999).
309. G.E. Tsyrlin, V.N. Petrov, V.G. Dubrovsky, Yu.B. Samsonenko, A.O. Golubok, S.A. Masalov,
N.I. Komyak, V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, M.V. Maksimov, A.F. Tsatsul’nikov,
B.V. Volovik, A.E. Zhukov, P.S. Kop’ev, N.N. Ledentsov, Zh.I. Alferov and D. Bimberg
“Heteroepitaxial growth of InAs on Si: a new type of quantum dots”
Semiconductors 33 (9), 972-975 (1999) - Fiz. Tekh. Poluprovodn. 33 (9), 1066-1069 (1999).
308. A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, A.Yu. Egorov, N.N. Ledentsov, A.F. Tsatsul’nikov,
M.V. Maximov, S.V. Zaitsev, Yu.M. Shernyakov, A.V. Lunev, P.S. Kop’ev, D. Bimberg, and
Zh.I. Alferov
“Gain characteristics of quantum dot lasers”
Semiconductors 33 (9), (1999) - Fiz. Tekh. Poluprovodn. 33 (9), 1111-1114 (1999).
307. B. V. Volovik, A. F. Tsatsul'nikov, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh,
N. N. Ledentsov, M. V. Maksimov, N. A. Maleev, Yu. G. Musikhin, A. A. Suvorova, V. M.
Ustinov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg and P. Werner
“Long-wavelength emission in structures with quantum dots formed by the stimulated
decomposition of a solid solution at strained islands”
Semiconductors 33 (8), 901-905 (1999) - Fiz. Tekh. Poluprovodn. 33 (8), 990-995 (1999).
306. A. F. Tsatsul'nikov, D. A. Bedarev, B. V. Volovik, S. V. Ivanov, M. V. Maksimov, Yu. G.
Musikhin, N. N. Ledentsov, B. Ya. Mel'tser, V. A. Solov'ev, P. S. Kop'ev, A. Yu. Chernyshov
and M. V. Belousov
“Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb
surface”
Semiconductors 33 (8), 886-888(1999) - Fiz. Tekh. Poluprovodn. 33 (8), 973-975 (1999).
305. A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul'nikov, M.
V. Maksimov, B. V. Volovik, D. A. Bedarev, Yu. M. Shernyakov, E. Yu. Kondrat'eva, N. N.
Ledentsov, P. S. Kop'ev, Zh.I. Alferov and D. Bimberg
“Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures”
17
Semiconductors 33 (8), 929-932 (1999) - Fiz. Tekh. Poluprovodn. 33 (8), 1020-1023 (1999).
304. A. F. Tsatsul'nikov, B. Ya. Ber, A. P. Kartashova, Yu. A. Kudryavtsev, N. N. Ledentsov, V. V.
Lundin, M. V. Maksimov, A. V. Sakharov, A. S. Usikov, Zh. I. Alferov, and A. Hoffmann
“Investigation of MOVPE-grown GaN layers doped with As atoms”
Semiconductors 33 (7), 728-730 (1999) - Fiz. Tekh. Poluprovodn. 33 (7), 791-794 (1999).
303. I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg,
N.N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen
“Control of the electronic properties of CdSe submonolayer superlattices via vertical
correlation of quantum dots”
Phys. Rev. B 60 (12), 8695-8703 (1999).
302. I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov,
and Zh.I. Alferov N.N. Ledentsov, A. Hoffmann, D. Bimberg
“Room Temperature Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting
Laser”
Appl. Phys. Lett. 74 (9), 1192-1194 (1999).
301. V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, M. V. Maximov,
B.V. Volovik, A.F. Tsatsul’nikov, P. S. Kop`ev, Zh. I. Alferov, I.P. Soshnikov, N. Zakharov,
P. Werner and D. Bimberg
“1.75 µm emission from self-organized InAs quantum dots on GaAs”
J. of Cryst. Growth 201/202, 1143-1145.
300. A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, Yu.M. Shernyakov, M.V. Maximov,
B.V. Volovik, A.F. Tsatsul’nikov, Yu.M. Musikhin, N. N. Ledentsov, P.S. Kop`ev, D. Bimberg,
and Zh. I. Alferov
“Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled
quantum dots and their application in injection lasers”
J. of Cryst. Growth 201/202, 1117-1120 (1999)
299. A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, M. V. Maksimov, G.E. Cirlin,
N.N. Ledentsov, D. Bimberg, P. Werner, and Zh. I. Alferov
“Self-organized InAs quantum dots in a silicon matrix”
J. of Cryst. Growth 201/202, 1202-1204 (1999).
298. A.F. Tsatsul’nikov, N.A. Bedarev, A.R. Kovsh, P.S. Kop’ev, N.N. Ledentsov, N.A. Maleev,
Yu.G. Musikhin, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov,
D. Bimberg, and P. Werner
“1.3 m emission from 2ML InAs quantum dots in a GaAs matrix”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 139-141
297. A. V. Sakharov, W. V. Lundin, V. A. Semenov, A. S. Usikov, N. N. Ledentsov, A. F.
Tsatsul'nikov, Zh. I. Alferov, A. Hoffmann and D. Bimberg
“Surface-mode lasing from optically pumped InGaN/GaN heterostructures”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 124-127.
296. M. Strassburg, R. Engelhardt, R. Heitz, U. W. Pohl, S. Rodt, V. Turck, A. Hoffmann,
D. Bimberg, I. L. Krestnikov, N. N. Ledentsov, Zh. I. Alferov, D. Litvinov, A. Rosenauer and
D. Gerthsen
“Quantum dots formed by ultrathin CdSe-ZnSe insertions”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p.13-19.
295. N. D. Zakharov, P. Werner, V. M. Ustinov, G. E. Cirlin, O. V. Smolski, D. V. Denisov, Zh. I.
Alferov, N. N. Ledentsov, R. Heitz and D. Bimberg
18
“Structure of stacked InAs quantum dots in a Si matrix: HRTEM experimental results and
modeling”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 216 - 219.
294. V.K. Kalevich, K.V. Kavokin, M. Paillard, X. Marie, P. Je. Jeune, T. Amand, M.N. Tkachuk,
V.M. Ustinov, N. N. Ledentsov, and B.P. Zakharchenya.
“Spin-separation in self-organized quantum dots under optical orientation of electrons”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 20-23
293. A. R. Kovsh, D. A. Livshits, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, M. V. Maximov,
N. N. Ledentsov, P. S. Kop`ev, Zh. I. Alferov and D. Bimberg
“3.3 W injection heterolaser based on self-organized quantum dots”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 128-130.
292. I. L. Krestnikov, N. A. Maleev, M. V. Maximov, A. F. Tsatsul'nikov, A. E. Zhukov,
A. R. Kovsh, I. V. Kochnev, N. M. Shmidt, N. N. Ledentsov, V. M. Ustinov, P. S. Kop'ev,
Zh. I. Alferov and D. Bimberg
“1.06 and 1.3 µm resonant cavity-enhanced photodetectors based on InGaAs quantum
dots”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 131 - 134.
291. L.E. Vorobjev, D.A. Firsov, V.A. Shalygin, V.N. Tulupenko, Zh.I. Alferov, P.S. Kop’ev,
I.V. Kochnev, N. N. Ledentsov, V. M. Ustinov, Yu.M. Shernyakov, and G. Belenky.
“Emission and amplification of mid-infrared radiation in quantum well structures under
generation of near-infrared light”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 423-426.
290. W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, M.V. Baidakova, I.L. Krestnikov,
and N. N. Ledentsov
“Growth and characterization of InGaN/GaN nanoscale heterostructures”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 485-488.
289. W.V. Lundin, A.S. Usikov, I.L. Krestnikov, A.V. Sakharov, A.F. Tsatsul’nikov,
M.V.Baidakova, D.V. Poloskin, V.V. Tret’iakov, N.N. Ledentsov
“MOVPE growth of strain compensated Al0.15Ga0.85N/GaN Bragg mirror on Al 0.08Ga0.92N
buffer layer”
Booklet of the 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and
Related Growth Techniques, June 8-11, 1999, Prague, Czech Republic, p.49-52
288. A.S. Usikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, I.L. Krestnikov, M.V. Baidakova,
Yu.G. Musikhin, V.V. Ratnikov, N.N. Ledentsov, Zh.I. Alferov, A. Hoffmann, and D. Dimberg
“Characterization of the InGaN/GaN heterostructures grown by MOCVD in argon ambient”
Booklet of the 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and
Related Growth Techniques, June 8-11, 1999, Prague, Czech Republic, p.57-60
287. A.F. Tsatsul’nikov, B.Ya. Ber, A.P. Kartashova, Yu.A. Kudravtsev, N.N. Ledentsov, W.V.
Lundin, M.V. Maximov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, A. Hoffmann, D.Bimberg
“Incorporation of As in GaN layers during MOCVD growth”
Booklet of the 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and
Related Growth Techniques, June 8-11, 1999, Prague, Czech. Republic, p.41-44
286. M. V. Maximov, Yu. M. Shernyakov, A. F. Tsatsul'nikov, B. V. Volovik, D. A. Bedarev, I. N.
Kaiander, N.N. Ledentsov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, P. S. Kop'ev, Zh. I.
Alferov and D. Bimberg
19
“Lasing from quantum dots formed by activated alloy spinodal decomposition on InAs
stressors”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 135 - 138.
285. A. F. Tsatsul'nikov, N. A. Bedarev, A. R. Kovsh, P. S. Kop'ev, N. N. Ledentsov, N. A. Maleev,
Yu. G. Musikhin, M. V. Maximov, A. A. Suvorova, V. M. Ustinov, B. V. Volovik, A. E. Zhukov,
D. Bimberg and P. Werner
“1.3 µm emission from 2 ML InAs quantum dots in a GaAs matrix”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 139 - 141.
Physics of Solid State Nanostructures, INTAS-96-O467,
284. W. V. Lundin, A. V. Sakharov, V. A. Semenov, A. S. Usikov, M. V. Baidakova, I. L.
Krestnikov and N. N. Ledentsov
“Growth and characterization of InGaN/GaN nanoscale heterostructures”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 485 - 488
283. L. E. Vorobjev, D. A. Firsov, V. A. Shalygin, V. N. Tulupenko, Zh. I. Alferov, P. S. Kop'ev, I.
V. Kochnev, N. N. Ledentsov, V. M. Ustinov, Yu. M. Shernyakov and G. Belenky
“Emission and amplification of mid-infrared radiation in quantum well structures under
generation of near-infrared light”
Proceedings of the 7th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p. 423 - 426
282. A.E.Zhukov, V.M.Ustinov, A.R.Kovsh, A.Yu.Egorov, N.A.Maleev, N.N.Ledentsov,
A.F.Tsatsul'nikov, M.V.Maximov, Yu.G.Musikhin, N.A.Bert, P.S.Kop'ev, D.Bimberg,
Zh.I.Alferov
“Control of the emission wavelength of self-organized InGaAs quantum dots: main
achievements and present status”
Semicond. Sci. Technol. 14, 575-581 (1999)
281. A.F. Tsatsul’nikov, B.Ya. Ber, A.P. Kartashova, Yu.A. Kudryavtsev, N.N. Ledentsov,
V.V. Lundin, M.V. Maximov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, A. Hoffmann
“Studies of GaN layers doped with As atoms, obtained by metalorganic vapour phase
epitaxy”
Fiz. I Tekh. Poluprovodn. 33 (7), 791-794(1999).
280. D. Bhattacharyya, E.A. Avrutin, A.C. Bryce, J.M. Gray, J.H. Marsh, D. Bimberg,
F. Heinrichsdorff, V.M. Ustinov, S.V. Zaitsev, N.N. Ledentsov, Zh.I. Alferov,
A.I. Onishchenko, E.P. O’Reilly
“Dynamics and spectral properties of quantum dot lasers at various operating conditions”
in Proceedings of the Fifth International Symposium on Quantum Confinement:
Nanostructures, ed. By M. Cahay, D.J. Lockwood, J.P. Leburton, S. Bandyopadhyay,
Electrochemical Society Proceedings, Vol. 98-19, 320-332 (1999).
279. G.Ya. Slepyan, S.A. Maksimenko, V.P. Kalosha, J. Hermann, N.N. Ledentsov,
I.L. Krestnikov, Zh.I. Alferov and D. Bimberg
“Polarization splitting of the gain band in quantum wire and quantum dot arrays”
Phys. Rev. B 59, No 19, 12275-12278 (1999).
278. V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V.
Volovik, I. L. Krestnikov, Yu.G. Musikhin, N. A. Bert, P. S. Kop'ev, and Zh. I. Alferov, N. N.
Ledentsov and D. Bimberg
“InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 µm”
Appl. Phys. Lett. 74, 2815 (1999).
20
277. A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. R.
Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop'ev, Zh. I. Alferov, I. Kozin, M. V.Belousov,
and D. Bimberg
“Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs
submonolayer inclusions in an AlGaAs host”
Semiconductors 33, No 4, 467-470 (1999)
276. R. Heitz, N.N. Ledentsov, D. Bimberg, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov,
A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, I.P. Soshnikov, N.D. Zakharov, P. Werner, and
U. Gösele
“Optical properties of InAs quantum dots in a Si matrix”
Appl. Phys. Lett. 74, 1701-1703(1999).
275. A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, N. A. Maleev, V. M. Ustinov, B. V. Volovik,
M.V. Maksimov, A. F. Tsatsul’nikov, N. N. Ledentsov, Yu. M. Shernyakov, A. V. Lunev,
Yu.G. Musikhin, N. A. Bert, P. S. Kop’ev, and Zh. I. Alferov.
“Photo- and electroluminescence in the 1.3-µm wavelength range from quantum-dot
structures grown on GaAs substrates”
Fiz. i Tekh. Poluprovodn. 33 (2), 180-183 (1999) -Semiconductors 33 (2), 153-156
274. N.A. Maleev, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, I.L. Krestnikov, A.V. Lunev,
A.V. Sakharov, B.V. Volovik, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov and D. Bimberg
“Vertical optical cavity InGaAs/GaAs quantum dot structures for 1.3 µm wavelength range”
Fiz. i Tekh. Poluprovodn. 33 (5), 629-633 (1999).
273. Zhao Zhen, D.A. Bedarev, B.V. Volovik, N.N. Ledentsov, A.V. Lunev, M.V. Maximov,
A.F. Tsatsul’nikov, A.Yu. Egorov, A.E. Zhukov, V.M. Ustinov, P.S. Kop’ev
“Influence of composition and annealing conditions on optical properties of (In,Ga)As QDs
in an (Al,Ga)As matrix”
Fiz. I Tekh. Poluprovodn. 33, 91-96 (1999)- Semiconductors 33, 80-84 (1999).
272. A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, N.N. Ledentsov, M.V. Maximov,
A.F. Tsatsul’nikov, P.S. Kop’ev
“Perculiarities of gain in injection lasers based on self-organized quantum dots”
Fiz. i Tekh. Poluprovodn. 33, 215-223 (1999) - Semiconductors 33 (2) 184-191 (1999).
271. A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, N.N. Ledentsov, M.V. Maximov,
A.F. Tsatsul’nikov, B.V. Volovik, P.S. Kop’ev, Zh.I. Alferov
“Influence of growth conditions on formation and luminescence of InGaAs quantum dots
in a Si matrix”
Fiz. I Tekh. Poluprovodn. 33, 194-197 (1999) - Semiconductors 33 (2), 165-168
270. N.N. Ledentsov, A.F. Tsatsul'nikov, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, M.V. Maximov,
V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, I.L. Krestnikov, D. Bimberg, and
A. Hoffmann
“Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices”
Appl. Phys. Lett. 74, 161-163 (1999)
269. A E Zhukov, A R Kovsh, V M Ustinov, A Yu Egorov, N N Ledentsov, A F Tsatsul'nikov, M V
Maximov, Yu M Shernyakov, V I Kopchatov, A V Lunev, P S Kop'ev, D Bimberg and Zh I
Alferov ,
“Gain characteristics of quantum dot injection lasers”
Semiconductor Science and Technology 13, 118-123 (1999)
268
A.E. Zhukov, V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, S.V. Zaitsev, N.Yu. Gordeev,
V.I. Kopchatov, N.N. Ledentsov, A.F. Tsatsul’nikov, B.V. Volovik, P.S. Kop’ev and
Zh.I. Alferov
“Low-threshold quantum dot injection laser emitting at 1.9 µm”
21
in Semiconducting and Insulating Materials, Proceedings of the 1oth Conference on
Semiconducting and Insulating Materials (SIMC-X), 1-5 June 1998, Berkeley, California,
USA, Z. Liliental-Weber and C. Miner, Eds., p.319-322 (1999).
267. N N Ledentsov, D Bimberg, V M Ustinov, M V Maximov, Zh I Alferov, V P Kalosha and J
A Lott
“Interconnection between gain spectrum and cavity mode in a quantum dot vertical cavity
laser”
Semiconductor Science and Technology 14, 99-102 (1999)
1998
266. Zh.I.Alferov, V.M. Andreev, and N.N. Ledentsov
Semiconductor heterostructures
in: Ioffe Institute:1918-1998. Development and research activities, P. Suris, ed. 68-110
(1998)
265. M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, M.-H. Mao, D Bimberg, V.M. Ustinov,
P.S. Kop'ev, Zh.I. Alferov, and J.A. Lott
„InAs/GaAs quantum dot injection lasers”
Trends in Optics and Photonics, Vol. 18, Radiative Processes and Dephasing in
Semiconductors, pp. 34-38 (1998)
264. J. A. Lott, M. J. Noble, J. P. Loehr, N. N. Ledentsov, V.M. Ustinov
„Single transverse mode quantum dot VCSELs by optical mode separation“
Optoelectronic Materials and Devices SPIE Conference 3419 Paper [3419-32], Proceedings
of SPIE Vol. 3419
263. J.A. Lott, M.J. Noble, J.P. Loehr, N.N. Ledentsov, V.M. Ustinov, D. Bimberg,
„Measurement of resonant-mode blueshifts in quantum-dot vertical-cavity surface-emitting
lasers”
SPIE Proceedings Vol. 3419 Optoelectronic Materials and Devices, itor(s): M. Osinski, Y.-K.
Su, pp.208-211 (1998).
262. M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, M.-H. Mao, D. Bimberg, V.M. Ustinov,
P.S. Kop'ev, Zh.I. Alferov, J.A. Lott
“InAs/GaAs Quantum Dot Injection Lasers”
In: Radiative Processes and Dephasing 98 TOPS (OSA Trends in Optics and Photonics, V.
18.), D.S. Citrin, ed., Vol. 18 (1998), ISBN: 1-55752-525-0
261. J. Holst, M. Straßburg, N.N. Ledentsov, L. Eckey, A. Göldner, A. Hoffmann, T. Hempel,
D. Rudloff, F. Bertram, J. Christen, A.V. Sakharov, M.V. Maximov, A.S. Usikov, W.V. Lundin,
B.V. Pushnyl, and Zh. I. Alferov
“Lasing and gain mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with
structural Properties”
Mater. Sci. Forum 264-268, 1291 (1998).
260. D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev,
M.V. Maximov, Zh.I. Alferov, J.A. Lott
„Application of self-organized quantum dots to edge emitting and vertical cavity lasers”
Physica E 3, 129 (1998)
259. V.M. Ustinov, A.E.Zhukov, A.Yu.Egorov, A.R.Kovsh, S.V.Zaitsev, N.Yu.Gordeev,
V.I.Kopchatov, N.N.Ledentsov, A.F.Tsatsul'nikov, B.V.Volovik, P.S.Kop'ev, Z.I.Alferov,
S.S.Ruvimov, Z.Liliental-Weber, and D.Bimberg,
“Low threshold quantum dot injection laser emitting at 1.9 µm”
Electron. Lett. 34 (7), 670-672 (1998).
22
258
B. V. Volovik, A. F. Tsatsul'nikov, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov,
A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov,
I. E. Kozin, M. V. Belousov, D. Bimberg
“Lasing in submonolayer InAs/AlGaAs structures without external optical confinement”
Tech. Phys. Lett. 24, 567-569 (1998), Pis’ma v Zh. Tekhn. Fiz. 24(4) 58-66 (1998)
257. Yu.M. Shernyakov, A.Yu. Egorov, B.V. Volovik, A.E. Zhukov, A.R. Kovsh, A.V. Lunev,
N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, V.M. Ustinov, Zhao Zhen, P.S. Kop’ev,
Zh.I. Alferov and D. Bimberg
„Operational characteristics and their anisotropy in high-power laser (1.5 W, 300K) with
active region based on quantum dots”
Pis’ma v Zh. Tekhn. Fiziki 24(9), 50-55 (1998).
256. R. Heitz, M. Veit, A. Kalburge; Q. Xie, M. Grundmann, P. Chen, N.N. Ledentsov,
A. Hoffmann, A. Madhukar, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov
„Hot carrier relaxation in InAs/GaAs quantum dots”
Physica E 2, 578 (1998).
255. A.F. Tsatsul'nikov, M.V. Belousov, N.A. Bert, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh,
I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik,
A.E. Zhukov, M. Grundmann, D. Bimberg, Zh.I. Alferov
“Lateral association of vertically-coupled quantum dots”
Microelectronic Engineering, 43/44, 37-43 (1998).
254. M.V. Maximov, N.N. Ledentsov, A.F. Tsatsul’nikov, V.M. Ustinov , A.E. Zhukov,
B.V. Volovik, I.L. Krestnikov, Zhao Zhen, P.N. Brounkov, S.G. Konnikov, P.S. Kop’ev,
M.V. Belousov, V. Turk, D Bimberg
“Optical studies of modulation doped InAs/GaAs quantum dots”
Microelectronic Engineering, 43/44, 71-77 (1998).
253. A.F.Tsatsul'nikov, S.V.Ivanov, P.S.Kop'ev, I.L.Krestnikov, A.K.Kryganovskii, N.N.Ledentsov, ,
M.V.Maximov, B.Ya.Mel’tser, P.V.Nekludov, A.A.Suvorova, A.N.Titkov, B.V.Volovik,
M.Grundmann, D.Bimberg, Zh.I.Alferov
“Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy”
Microelectronic Engineering, 43/44, 85-90 (1998).
252. J. Christen, T. Hempel, F. Bertram, N.N. Ledentsov, D. Bimberg, A.V. Sakharov,
M.V. Maximov, A.S. Usikov, W.V. Lundin, B.V. Pushnyi, Zh.I. Alferov
“Possible impact of surface morhology on stimulated emission in GaN-AlGaN double
heterostructures”
Physica E 2, 557 (1998).
251. A.E.Zhukov, V.M.Ustinov, A.Yu.Egorov, A.R.Kovsh, N.N.Ledentsov, M.V.Maksimov,
A.F.Tsatsul’nikov, N.Yu.Gordeev, S.V.Zaitsev, P.S.Kop’ev
“Injection lasers based on vertically coupled quantum dots”
in "Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum
Devices", M.Balkanski and N.Andreev (ed.), (NATO ASI Series, High Technology - Vol. 42),
Kluwer Academic Publishers, pp. 93-95 (1998).
250. A.R. Kovsh, A.E. Zhukov, M.A. Odnoblyudov, A.Yu. Egorov, V.M. Ustinov, N.N. Ledentsov,
M.V. Maksimov, A.F. Tsatsul’nikov, N.Yu. Gordeev, S.V. Zaitsev, P.S. Kop’ev
“Quantum dot laser with high temperature stability of threshold current density”
in "Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum
Devices", M.Balkanski and N.Andreev (ed.), (NATO ASI Series, High Technology - Vol. 42),
Kluwer Academic Publishers, pp. 207-208 (1998).
249. M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg
„New semiconductor lasers based on quantum dots”
Laser und Optoelektronik 30, No 3, 70-77 (1998).
23
248.
I.L. Krestnikov, A. Rosenauer, S.V. Sorokin, Zh.I. Alferov, D. Bimberg, D. Gerthsen,
S.V. Ivanov, C.M. Sotomayor Torres, P.S. Kop'ev, N.N. Ledentsov, M.V. Maximov,
A.V. Sakharov
„RT exciton waveguiding and lasing in submonolayer CdSe-(Zn, Mg)(S, Se) structures”
Materials Science and Engineering: B 51 (1-3), 26-29 (1998)
247. M. Straßburg, N.N. Ledentsov, A. Hoffmann, U.W. Pohl, D. Bimberg, I.L. Krestnikov,
S.V. Ivanov, M.V. Maximov, S.V. Sorokin, P.S. Kop’ev, Zh.I. Alferov
“Gain studies and lasing in excitonic waveguides of II-VI submonolayer structures”
Physica E 2, 542 (1998).
246. G.E. Cirlin, V.G. Dubrovskii, V.N. Petrov, N.K. Polyakov, N.P. Korneeva, V.N. Demidov,
A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.I. Komyak, V.M. Ustinov,
A.Yu. Egorov, A.R. Kovsh, M.V. Maximov, A.F. Tsatsul'nikov, B.V. Volovik, A.E. Zhukov,
P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, M. Grundmann and D. Bimberg
“Formation of InAs quantum dots on a silicon (100) surface”
Semicond. Science and Technol. 13, 1262-1265 (1998).
245. N.N. Ledentsov
“Growth and characterzation of InAs quantum dots”
In: Narrow Gap Semiconductors, S.C. Shen, D.Y. Tang, G.Z. Zheng, and G. Bauer, Eds.
World Scientific, Singapore, 1998 pp. 419-434 (Proceedings of the Eighth International
Conference on Narrow Gap Semiconductors, Shanghai, China, 21-24 April 1997).
244. I.L. Krestnikov, S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov,
S.V. Sorokin, C.M. Sotomayor Torres, D. Bimberg and Zh.I. Alferov
“RT Lasing via Nanoscale CdSe Islands in a (n,Mg)(S,Se) Matrix”
IEEE J. Electron. Mat. 27 (2), 73-76 (1998).
243. A.E. Zhukov, V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, A.F. Tsatsul’nikov, M.V. Maximov,
N.N. Ledetsov, S.V. Zaitsev, N.Yu. Gordeev, V.I. Kopchatov, Y.M. Shernyakov, P.S. Kop’ev,
D. Bimberg, and Zh.I. Alferov
“Injection Lasers Based on InGaAs Quantum Dots in an AlGaAs Matrix”
J. Electron. Mat. 27 (2), 106-109 (1998).
242. S.A. Maksimenko, V. P. Kalosha, N.N. Ledentsov G.Ya. Slepyan and D. Bimberg
“Effective-medium approach for certain laser active media”
In:A.F.Jacob and J.Reinert (eds), 7th International Conference on Complex Media
Bianisotropics'98 , Braunschweig, Germany, June 3-6, 1998, Proceedings ,pp. 81-84
241. I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, S.V. Ivanov, M.V. Maximov, A.V.
Sakharov, S.V. Sorokin, P.S. Kopev, Zh.I. Alferov, C.M. Sotomayor Torres
“Optical Properties and Lasing in CdSe-Submonolayers in a (Zn,Mg)(S,Se) Matrix”
phys. stat. sol.(a) 168, 309-315 (1998).
240. D. Bimberg, V.A. Shchukin, N.N. Ledentsov, A. Krost, F. Heinrichsdorff.
„Formation of self-organized quantum dots at semiconductor surfaces”
Applied Surface Science 130-132, 713-718 (1998).
239. P. N. Brunkov, A. A. Suvorova, N. A. Bert, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov,
V.M. Ustinov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, S. G. Konnikov, L. Eaves,
and P.S. Main
“Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer
of self-organized InAs quantum dots”
Semiconductors 32 (10), 1096-1100 (1998).
238. M. Strassburg, I.L. Krestnikov, A. Göldner, V. Kutzer, A. Hoffmann, N.N. Ledentsov,
Zh.I. Alferov, D. Litvinov, A. Rosenauer and D. Gerthsen.
“Excitonic gain in CdSe/ZnSe quantum dot structures”
24
Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific,
1999).
237. V.P. Kalosha, G.Ya. Slepyan, S.A. Maksimenko, N.N. Ledentsov, O. Stier, M. Grundmann,
D. Bimberg.
“Effective-medium approach for active medium of QD laser”
Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific,
1999).
236. M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov,
A.R. Kovsh, N.A. Bert, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg,
I.P. Soshnikov and P. Werner
“Middle infrared emission from InAs quantum dots in a GaAs matrix”
Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific,
1999).
235. M.V. Maximov, D.A. Bedarev, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, A.V. Lunev,
Yu.G. Musikhin, Yu.M. Shernyakov, A.F. Tsatsul’nikov, V.M. Ustinov, B.V. Volovik,
A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov and D. Bimberg.
“Optimization of quantum dot lasers by seeding of quantum dots”
Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific,
1999).
234. A.F. Tsatsul’nikov, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, M.V. Maximov, N.A. Bert,
V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, A.O. Golubok,
S.A. Masalov, V.N. Petrov, N.N. Ledentsov, R. Heitz, M. Grundmann, D. Bimberg,
I.P. Soshnikov, P. Werner, and U. Gösele.
“Formation of InAs quantum dots in a silicon matrix”
Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific,
1999).
233. I.L. Krestnikov, M. Strassburg, M. Caesar, V.A. Shchukin, A. Hoffmann, U.W. Pohl,
D. Bimberg, N.N. Ledentsov, V.G. Malyshkin, P.S. Kop’ev, Zh.I. Alferov, D. Litvinov,
A. Rosenauer, and D. Gerthsen.
“Vertical arrangement and wavefunction control in structures with 2D quantum dots”
(invited).
Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific,
1999), pp. 70-77.
232. N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg, V.P. Kalosha, J.A. Lott,
A.O. Kosogov and P. Werner
“Influence of gain spectrum on cavity modes in quantum dot vertical cavity lasers”
Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific,
1999).
231. B.V. Volovik, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, I.E. Kozin, I.L. Krestnikov,
M.V. Maximov, A.V. Sakharov, A.F. Tsatsul’nikov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov,
N.N. Ledentsov, M. Strassburg, A. Hoffmann, D. Bimberg, I.P. Soshnikov, P. Werner
“Lasing in structures with InAs submonolayer insertions in an AlGaAs matrix without
external optical confinement”
Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific,
1999).
230. L.E. Vorobjev, D.A. Firsov, V.A. Shalygin, V.N. Tulupenko, Yu.M. Shernyakov,
A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, P.S. Kop’ev, I.V. Kochnev, N.N. Ledentsov,
M.V. Maximov, V.M. Ustinov, and Zh.I. Alferov
“Infrared emission from nanostructures with quantum dots and quantum wells”
Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific,
1999).
25
229. F. Hatami, M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer,
D. Bimberg, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop’ev and Zh.I. Alferov
“Carrier dynamics in type-II GaSb-GaAs quantum dots”
Phys. Rev. B 57, 4635-4641 (1998).
228. M. Grundmann, N.N. Ledentsov, N. Kirstaedter, F. Heinrichsdorff, A. Krost, D. Bimberg,
A.O. Kosogov, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop’ev and Zh.I. Alferov
“Semiconductor quantum dots for application in diode lasers”
Thin Solid Films 318, 83-87 (1998)
227. D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop’ev;
Zh.I. Alferov and J.A. Lott
“Edge and vertical cavity surface emitting InAs QD lasers”
Solid-State Electronics 42, 1433-1437 (1998).
226
G.E. Cirlin, V.N. Petrov, V.G. Dubrovsky, S.A. Masalov, A.O. Golubok, N.I. Komyak,
N.N. Ledentsov, Zh.I. Alferov, D. Bimberg
“Fabrication of InAs quantum dots on Si”
Pis’ma v Zh. Tekh. Fiz. 24, No 8, 10 (1998).
225. L.E. Vorob’ev, D.A. Firsov, V.A. Shalygin, V.N. Tulupenko, Yu.M. Shernyakov,
N.N. Ledentsov, V.M. Ustinov, and Zh.I. Alferov
“Spontaneous far-IR emission accompanying transitions of charge carriers between levels
of quantum dots”
JETP Letters 67, 275 (1998).
224
M. V. Maximov, Yu. M. Shernyakov, A. F. Tsatsul'nikov, A. V. Lunev, A. V. Sakharov, V.
M. Ustinov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, P. S. Kop'ev, L. V. Asryan, and
Zh.I. Alferov
“High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser”
J. Appl. Phys. 83, 5561-5563 (1998).
223
A.F. Tsatsul’nikov, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov,
A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, M. Grundmann, D. Bimberg and
Zh.I. Alferov
“Optical properties of InAlAs quantum dots in an AlGaAs matrix”
Applied Surface Science 123/124, 381-384 (1998)
222. A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, S. V. Zaitsev, N. Yu. Gordeev,
V. I. Kopchatov, A. V. Lunev, A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, P. S.
Kop'ev
“Investigation of the device characteristics of a low-threshold quantum-dot laser emitting
at 1.9 µm”
Fiz. Tekh. Poluprovodn. 32, 1822-1830 (1998) - Semiconductors 32, 795-797 (1998),
221
S. Ruvimov, Z. Liliental-Weber, and J. Washburn, N. N. Ledentsov, V. M. Ustinov,
V. A. Shchukin, P. S. Kop'ev, and Zh. I. Alferov, D. Bimberg
“Structural characterization of self-organized nanostructures”
Physics of the Solid State 40, 781-783 (1998)
220
N. N. Ledentsov
“Excitonic waveguiding and lasing in wide bandgap semiconductor”
Physics of the Solid State 40, 775-777 (1998)
219
V.A. Shchukin, D. Bimberg, V.G. Malyshkin and N.N. Ledentsov
“Vertical correlations and anticorrelations in multisheet arrays of two-dimensional
islands”
Phys. Rev B 57, 12262 (1998).
26
218
A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, N.V. Lukovskaya, V.M. Ustinov, Yu.M. Shernyakov,
M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, A.V. Lunev, N.N. Ledentsov, P.S. Kop’ev,
Zh.I. Alferov and D. Bimberg
“Injection laser based on composite InAlAs/InAs vertically coupled quantum dots in
AlGaAs matrix”
Proceedings of the 6th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 22-26, 1998, p. 187-190 (1998).
217
A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maximov, B.V. Volovik, A.Yu. Egorov, A.R. Kovsh,
V.M. Ustinov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov and
D. Bimberg
“Resonant waveguiding and lasing in structures with InAs submonolayers in an AlGaAs
matrix”
Proceedings of the 6th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 22-26, 1998, p. 382-385 (1998).
216
I.L. Krestnikov, A.V. Sakharov, N.N. Ledentsov, I.P. Soshnikov, Yu.G. Musikhin,
A.R. Kovsh, V.M. Ustinov, I.V. Kochnev, P.S. Kop’ev, Zh.I. Alferov and D. Bimberg
“Self-assembled formation of quantum dots during InGaAlAs quantum well growth”
Proceedings of the 6th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 22-26, 1998, p. 257-259 (1998).
215
V.A. Shchukin, V.G. Malyshkin, N.N. Ledentsov and D. Bimberg
“Vertical correlations and anti-correlations in multi-layered arrays of 2D quantum islands”
Proceedings of the 6th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 22-26, 1998, p. 253-256 (1998).
214
G.E. Cirlin, V.G. Dubrovskii, V.N. Petrov, N.K. Polyakov, N.P. Korneeva, V.N. Demidov,
A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.I. Komyak, N.N. Ledentsov,
Zh.I. Alferov and D. Bimberg
“InAs nanoscale islands on Si surface: a new type of quantum dots”
Proceedings of the 6th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 22-26, 1998, p. 249-252 (1998).
213
L.E. Vorobjev, D.A. Firsov, V.A. Shalygin, V.N. Tulupenko, Yu.M. Shernyakov,
A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, P.S. Kop’ev, I.V. Kochnev, N.N. Ledentsov,
M.V. Maximov, V.M. Ustinov, and Zh.I. Alferov
“Far-infrared spontaneous intraband emission from laser structures with quantum dots
and quantum wells”
Proceedings of the 6th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 22-26, 1998, p. 148-151 (1998).
212
I.L. Krestnikov, P.S. Kop’ev, Zh.I. Alferov, M. Straßburg, N.N. Ledentsov, A. Hoffmann, D.
Bimberg and C.M. Sotomayor Torres,
“Vertical coupling of quantum islands in CdSe/ZnSe submonolayer superlattices"
Proceedings of the 6th International Symposium "Nanostructures: Physics and
Technology", Ioffe Institute, St. Petersburg, Russia, June 22-26, 1998, p. 187-190 (1998).
211
N.N. Ledentsov, V.M. Ustinov, A.V. Shchukin, P.S. Kop’ev, Zh.I. Alferov and D. Bimberg
“Quantum Dot Heterostructures: growth, properties, lasing” (review)
Fiz. I Tekh. Poluprovodn. 32, 385-410 (1998) - Semiconductors 32 (1998)
210
V. Kutzer, M. Straßburg, A. Hoffmann, I. Broser, U.W. Pohl, N.N. Ledentsov, D. Bimberg,
S.V. Ivanov
“Gain to absorption convertion by increasing excitation density in excitonic waveguides”
J. Crys. Growth 184-185, 632-636 (1998)
209
I.L. Krestnikov, M.V. Maximov, A.V. Sakharov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov,
D. Bimberg, C.M. Sotomayor Torres
27
“RT lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer
superlattices”
J. Crys. Growth 184-185, 545-549 (1998)
208
G.E. Tsyrlin, V.N. Petrov, V.G. Dubrovskyi, S.A. Masalov, A.O. Golubok, N.I. Komyak,
N.N. Ledentsov, Zh.I. Alferov and D. Bimberg,
“Growth of InAs quantum dots on silicon”
Pis'ma v ZhTF, 24, No 8, 10 (1998) - Tech. Phys. Lett. 24 (1998).
207. A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov,
A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, Chao Chen, P. S. Kop‘ev, Zh. I. Alfërov,
V.N. Petrov, G. E. Tsirlin, D. Bimberg
“Formation of InAs quantum dots in a GaAs matrix during growth on misoriented
substrates”
Fiz. Tekh. Poluprovodn. 32, 95-100 (1998) Semiconductors 32, 84-89 (1998),
206. A.R. Kovsh, A.Yu. Egorov, A.E. Zhukov, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maximov,
A.F. Tsatsul'nikov, B.V. Volovik, A.V. Lunev, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov,
D. Bimberg
„Effect of the quantum-dot surface density in the active region on injection-laser
characteristics”
Fiz. Tekh. Poluprovodn. 32, 1114-1118 (1998) - Semiconductors 32, 997-1000 (1998)
205
D. Bimberg, M. Grundmann and N.N. Ledentsov
“Growth, spectroscopy, and laser applications of self-ordered III-V quantum dots”
MRS Bulletin, V. 23, No 2, 31 (1998).
204
M. Strassburg, V. Kutzer, U.W. Pohl, A. Hoffmann, I. Broser, N.N. Ledentsov, D. Bimberg,
A. Rosenauer, U. Fischer, D. Gerthsen, I. L. Krestnikov, M.V. Maximov, P.S. Kop'ev,
Zh.I. Alferov
“Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix”
Appl. Phys. Lett. 72, 942-944 (1998).
203
J. A. Lott, N. N. Ledentsov, V. M. Ustinov
„Vertical cavity surface emitting lasers with vertically coupled quantum dot active regions“
(Invited paper)
Photonics West 1998, Vertical Cavity Surface Emitting Lasers, Conference 3286, 28-29
January 1998
Proceedings of SPIE Vol. 3286 [3286-02]
202
V.M. Ustinov, A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, N.N. Ledentsov, A.V. Lunev, Yu.M.
Shernyakov, M.V. Maksimov, A.F. Tsatsul'nikov, B.V. Volovik, P.S. Kop'ev and Zh.I. Alferov
“Low threshold heterostructure laser based on quantum dots emitting at 1.84 µm”
Pis'ma v Zh.Tekh.Fiz. 24, No 1, 49-54 (1998)
201
R. I. Dzhioev, B. P. Zakharchenya, E. L. Ivchenko, V. L. Korenev, Yu. G. Kusraev, N.
N. Ledentsov, V. M. Ustinov, A. E. Zhukov, and A. F. Tsatsul'nikov
“Optical orientation and alignment of excitons in quantum dots”
Physics of the Solid State 40,. 790-793 (1998)
1997
200
N.N. Ledentsov
“Self-organized quantum wires and dots: new opportunities for device applications”
Prog. Crystal Growth and Charact. 35, 289-305 (1997).
199. N. N. Ledentsov
"Complete quntization of electrons in solids and the birth of quantum dot laser"
Semiconductor News Vol. 6(3), 93-96 (1997).
28
198. N.N. Ledentsov; V.M. Ustinov, J.A.Lott, A.Y. Egorov, A.E. Zhukov, M.V. Maximov,
P.S. Kop'ev, Zh.I. Alferov, and D. Bimberg
“Vertical cavity surface emitting lasers based on vertically coupled quantum dots”
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting.
Conference, Proceedings., IEEE , Volume: 2 , 1997, Page(s): 502 -503 vol.2
197. M.M. Sobolev , A.R. Kovsh , V.M. Ustinov , A.Yu. Egorov , A.E. Zhukov , M.V. Maximov and
N.N. Ledentsov
“Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on
Point Defects”
Materials Science Forum Vols. 258-263 pp. 1619 –1624 (1997)
196
R. Heitz, M. Veit, M. Grundmann, N.N. Ledentsov, A. Hoffmann, D. Bimberg, A. Kalburge, Q.
Xie, P. Chen, A. Madhukar, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov
“Carrier capture and relaxation processes in InAs/GaAs quantum dots “
Phys. Low-Dim. Struct. 11/12, 1 (1997)
195
D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev,
Zh.I. Alferov, J.A. Lott
“Edge and surface emitting quantum dot lasers”
Int. Electron Devices Meeting 1997 (IEDM-97), Technical Digest, IEEE Catalog #97CH36103,
p. 381 (1997)
194
G.E. Cirlin, V.N. Petrov, A.O. Golubok, S.Ya. Tipissev, V.G. Dubrovskii, G.M. Guryanov,
N.N. Ledentsov, D. Bimberg
“Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal
surfaces”
Surface Science 377-379, 895-898 (1997).
193
R.I. Dzhioev, B.P. Zakharchenya, E.L. Ivchenko, V.L. Korenev, Yu.G. Kursaev,
N.N. Ledentsov, V.M. Ustinov, A.E. Zhukov, and A.F. Tsatsul’nikov
“Fine structure of excitonic levels in quantum dots”
JETP Lett. 65, 804-809 (1997) - Pis’ma Zh. Eksp. Teor. Fiz. 65, 766-771 (1997).
192
R. Heitz, M. Veit, N.N. Ledentsov, A. Hoffmann, D. Bimberg, V.M. Ustinov, P.S. Kop’ev and
Zh.I. Alferov
“Energy relaxation by multiphonon processes in InAs/GaAs quantum dots”
Phys. Rev. B 56, 10435-10445 (1997).
191. N.N. Ledentsov, N. Kirstaedter, M. Grundmann, D. Bimberg, V.M. Ustinov, I.V. Kochnev,
P.S. Kop'ev, P.S. Kop'ev and Zh.I. Alferov
“Three-dimensional arrays of self-ordered quantum dots for laser applications”
Microelectronics Journal 28, 915-931 (1997)
190. G.E. Tsyrlin, N.P. Korneeva, V.N. Demidov, N.K. Polyakov, V.N. Petrov, and N.N. Ledentsov
“A RHEEDstudy of the transition from two-dimensional to three-dimensional growth in the
InAs/GaAs system”
Semiconductors 31, 1057-1059 (1997) - Fiz. Tekh. Poluprovodn. 31, 1230-1232 (1997)
189. L. Aigouy, T. Holden, F. Pollak, N.N. Ledentsov, V.M. Ustinov, P.S. Kop'ev, and D. Bimberg.
“Coupled quantum dot-based InAs-GaAs laser structure studied by contactless
electroreflectance and surface photovoltage spectroscopy”
Electrochemical Society Proceedings, Volume 97-11, Eds: M. Cahay, J.P. Leburton, D.J.
Lockwood, S. Bandyopadhyay, pp. 146-153 (1997).
188. D. Bimberg, N. Kirstaedter, N.N. Ledentsov, Zh.I. Alferov, P.S. Kop'ev, and V.M. Ustinov.
InGaAs-GaAs quantum dot lasers
IEEE Journal of Selected Topics in Quantum Electronics 3, 196 (1997).
29
187. A.E. Zhukov, V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, A.F. Tsatsul'nikov, N.N.Ledentsov,
S.V. Zaitsev, N.Yu. Gordeev, P.S. Kop'ev, and Zh.I.Alferov.
“Negative characteristic temperature of InGaAs quantum dot injection laser”
International Symposium on Formation, Physics and Device Application of Quantum Dot
Structures, November 4-7, 1996, Hokkaido University Conference Hall, Sapporo, Japan Jap. J. Appl. Phys 36 part 1, 4216-4218 (1997)
186. M.V. Maximov, I.V. Kochnev, Yu.M. Shernyakov, S.V. Zaitsev, N.Yu. Gordeev, A.F.
Tsatsul'nikov, A.V.Sakharov, I.L. Krestnikov, P.S. Kop'ev, Zh.I.Alferov, N.N.Ledentsov,
D.Bimberg, A.O. Kosogov, P. Werner, and U. Gösele.
“InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T 0=385 K)
grown by metal organic chemical vapour deposition”
International Symposium on Formation, Physics and Device Application of Quantum Dot
Structures, November 4-7, 1996, Hokkaido University Conference Hall, Sapporo, Japan Jap. J. Appl. Phys 36 part 1, 4221-4223 (1997)
185. I.V.Kochnev, N.N.Ledentsov, M.V.Maximov, A.F.Tsatsul'nikov, A.V.Sakharov, B.V.Volovik,
P.S.Kop'ev, Zh.I.Alferov, J.B”hrer, D.Bimberg,
"Growth and Characterization of Coherent Quantum Dots Formed by Single- and MultiCycle InGaAs-GaAs Metal-Organic Chemical Vapor Deposition",
International Symposium on Formation, Physics and Device Application of Quantum Dot
Structures, November 4-7, 1996, Hokkaido University Conference Hall, Sapporo, Japan,
Jap. J. Appl. Phys 36 part., 4107-4110 (1997))
184. S.V. Zaitsev, N.Yu. Gordeev, V.I. Kopchatov, A.M. Georgievskii, V.M. Ustinov, A.E. Zhukov,
A.Yu. Egorov, A.R. Kovsh, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov and D. Bimberg.
“Quantum dot lasers: Principal components of the threshold current density”
Fiz. Tekh. Poluprovodn. 31, 1106-1108 (1997) - Semiconductors 31, 947-949 (1997).
183. D. Bimberg, I.P. Ipatova, N.N. Ledentsov, P.S. Kop'ev, V.G. Malyshkin, and V.A. Shchukin.
„Spontaneous Ordering of Semiconductor Nanostructures”
Proc. of the Scientific Session of the Division of General Physics and Astronomy of the
Russian Academy of Sciences, 29 January 1997. - Uspekhi Fiz. Nauk, 167 (5), pp. 552--555
(1997). - Uspekhi 40 (5), 529-532 (1997).
182. V.A. Shchukin, N.N. Ledentsov, M. Grundmann, and D. Bimberg
“Self-Ordering of Nanostructures on Semiconductor Surfaces”
in: Optical properties of Low Dimensional Semiconductors. . G. Abstreiter, A. Aydinli, and
J.-P. Leburton, Eds., NATO ASI Series. Series E: Applied Sciences - Vol. 344. Kluwer
Academic Publishers, Dordrecht, The Netherlands. 1997. pp. 257-302
181. D. Bimberg, N. Kirstaedter, N.N. Ledentsov, Zh.I. Alferov, P.S. Kop'ev, V.M. Ustinov, S.V.
Zaitsev, M.V. Maximov, Bimberg
„InGaAs/GaAs Quantum Dots Lasers“
in: Optical properties of Low Dimensional Semiconductors. . G. Abstreiter, A. Aydinli, and
J.-P. Leburton, Eds., NATO ASI Series. Series E: Applied Sciences - Vol. 344. Kluwer
Academic Publishers, Dordrecht, The Netherlands. 1997. pp. 315-330
180. D. Bimberg, N.N. Ledentsov, M. Grundmann, R. Heitz, J. Böhrer, V.M. Ustinov, P.S. Kop’ev
and Zh.I. Alferov
“Luminescence properties of semiconductor quantum dots”
Journal of Luminescence 72-74, 34-37 (1997)
179
M.V. Maximov, A.V. Sakharov, V.V. Lundin, A.S. Usikov, B.V. Pushnyi, I.L. Krestnikov,
N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, V.P. Rozum
“Peculiarities of stimulated emission in optically pumped GaN-AlGaN double
heterostructure”
Pis’ma v Zh. Tekhn. Fiz. 23 (15), 53-59 (1997) (Tech. Phys. Lett. 23 (1997))
30
178
A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, N.N. Ledentsov, M.V. Maximov,
A.F. Tsatsul’nikov, S.V. Zaitsev, N.Yu. Gordeev, P.S. Kop’ev, D. Bimberg, and Zh.I. Alferov
„Injection heterostructure laser based on array of vertically coupled InGaAs quantum dots
in an AlGaAs matrix”
Fiz. Tekh. Poluprovodn. 31, 483-487 (1997) -Semiconductors 31 (1997)
177
S.V. Zaitsev, N.Yu. Gordeev, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, A.F. Tsatsul’nikov,
N.N. Ledentsov, P.S. Kop’ev, D. Bimberg, and Zh.I. Alferov
„Investigation of properties of low threshold heterostructure lasers based on arrays of
quantum dots”
Fiz. Tekh. Poluprovodn. 31, 539-544 (1997) -Semiconductors 31, 455-459 (1997)
176
M.V. Maximov, Yu.M. Shernyakov, S.V. Zaitsev, N.Yu. Gordeev, A.Yu. Egorov, A.E. Zhukov,
P.S. Kop’ev, A.O. Kosogov, A.V. Sakharov, N.N. Ledentsov, V.M. Ustinov,
A.F. Tsatsul’nikov, Zh.I. Alferov, J. Böhrer, D. Bimberg
”Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix”
Fiz. Tekh. Poluprovodn. 31, 670-673 (1997) -Semiconductors 31 (1997)
175
A.F. Tsatsul’nikov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, N.N. Ledentsov,
M.V. Maximov, B.V. Volovik, A.A. Suvorova, N.A. Bert, P.S. Kop’ev
”Lateral association of vertically coupled quantum dots”
Fiz. Tekh. Poluprovodn. 31, 851-854 (1997) -Semiconductors 31 (1997)
174. M. M. Sobolev, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maksimov,
and N. N. Ledentsov
“Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled
quantum dots”
Semiconductors 31 (10), 1074-1079 (1997)
173
M.V. Maximov, I.L. Krestnikov, S.V. Ivanov, N.N. Ledentsov, S.V. Sorokin
“Calculations of size quantization levels in strained ZnCdSe/ZnSe quantum wells”
Fiz. Tekh. Poluprovodn. 31, 939-943 (1997) -Semiconductors 31 (1997)
172
G.E. Tsyrlin, V.N. Petrov, M.V. Maximov, N.N. Ledentsov
“Luminescence properties of InAs-GaAs quantum dots formed by submonolayer
migration-enhanced epitaxy”
Fiz. Tekh. Poluprovodn. 31, 912-915 (1997) -Semiconductors 31 (1997)
171
L. Aigouy, T. Holden, F.H. Pollak, N.N. Ledentsov, V.M. Ustinov, P.S. Kop’ev and
D. Bimberg
“Contactless electroreflectance study of a vertically coupled quantum dot-based
InAs/GaAs laser structure”
Appl. Phys. Lett.70, 3329-3331 (1997)
170
J.A. Lott, N.N. Ledentsov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev,
Zh.I. Alferov, and D. Bimberg
“Vertical cavity lasers based on vertically coupled quantum dots”
Electronics Letters 33, 1150-1151 (1997)
169
N.N. Ledentsov
“Self-organized quantum wires and dots: New challenge for device applications” (invited).
Extended Abstracts of the 7th European Workshop on Metal-Organic Vapour Phase
Epitaxy and Related Growth Techniques, Berlin, June 8-11, 1997, E0 (1997)
168
A.S. Usikov, A.V. Sakharov, M.V. Maximov, J. Christen, T. Hempel, W.V. Lundin,
B.V. Pushnyi and N.N. Ledentsov
“Surface morphology and perquliarities of stimulated emission in MOCVD GaN-AlGaN
double heterostructures”
Extended Abstracts of the 7th European Workshop on Metal-Organic Vapour Phase
Epitaxy and Related Growth Techniques, Berlin, June 8-11, 1997, F11 (1997)
31
167
M.V. Maximov, Yu.M. Shernyakov, I.V. Kochnev, A.V. Sakharov, N.N. Ledentsov,
A.F. Tsatsul’nikov, B.V. Volovik, A.V. Lunev, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg,
A.O. Kosogov and P. Werner
“High power strained MOCVD (In,Ga,Al)As lasers with laterally modulated active region”
Extended Abstracts of the 7th European Workshop on Metal-Organic Vapour Phase
Epitaxy and Related Growth Techniques, Berlin, June 8-11, 1997, E12 (1997)
166
B.V. Volovik, M.V. Maximov, A.V. Sakharov, I.V. Kochnev, N.N. Ledentsov,
A.F. Tsatsul’nikov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg, A.O. Kosogov and P. Werner
“Coherent superdots formed by multi-cycle InGaAs-(Al,Ga)As metal-organic chemical
vapor deposition”
Extended Abstracts of the 7th European Workshop on Metal-Organic Vapour Phase
Epitaxy and Related Growth Techniques, Berlin, June 8-11, 1997, E9 (1997)
165
N.N. Ledentsov, D. Bimberg, Yu.M. Shernyakov, I.V. Kochnev, M.V. Maximov,
A.V. Sakharov, I.L. Krestnikov, A.Yu. Egorov, A.E. Zhukov, A.F. Tsatsul’nikov, B.V. Volovik,
V.M. Ustinov, P.S. Kop’ev and Zh.I. Alferov
“Properties of strained (In,Ga,Al)As lasers with laterally modulated active region”
Appl. Phys. Lett. 70, 2888 (1997)
164
N.N. Ledentsov, I.L. Krestnikov, M.V. Maximov, S.V. Ivanov, S.L. Sorokin, P.S. Kop’ev, Zh.I.
Alferov, D. Bimberg, C.M. Sotomayor Torres
Response to „Comment on ‘Ground state exciton lasing in CdSe submonolayers inserted
in a ZnSe matrix’“ [Appl. Phys. Lett. 70, 2765 (1997)].
Appl. Phys. Lett. 70, 2766 (1997)
163
M.M. Sobolev, A.R. Kovsh, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, and
N.N. Ledentsov
“Deep level transient spectroscopy of InAs/GaAs vertically coupled laser structures”
Extended Abstracts of the Annual International Symposium „Nanostructures: Physics and
Technology“ St. Petersburg, 1997) 274-277 (1997)
162
G.E. Cirlin, V.N. Petrov, N.K. Polyakov, V.N. Demidov, N.P. Korneeva, A.O. Golubok,
S.A. Masalov, N.B. Ponomareva; N.N. Ledentsov and D. Bimberg
“The mechanism of InAs/GaAs heteroepitaxial growth during submonolayer migration
enhanced epitaxy”
Extended Abstracts of the Annual International Symposium „Nanostructures: Physics and
Technology“ St. Petersburg, 1997 296-299 (1997)
161
S.V. Zaitsev, N.Yu. Gordeev, V.I. Kopchatov, V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov,
N.N. Ledentsov, M.V. Maximov, P.S. Kop'ev, A.O. Kosogov and Z.I. Alferov
“Vertically Coupled Quantum Dot Lasers: First Device Oriented Structures with High
Internal Quantum Efficiency”
Jpn. J. Appl. Phys., Part 1, 36, 4219(1997).
160
M.V. Maximov, Yu.M. Shernyakov, N.N. Ledentsov, A.F. Tsatsul’nikov, Zhao Zhen,
A.V. Lunev, A.V. Sakharov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh,
S.V. Zaitsev, N.Yu. Gordeev, P.S. Kop’ev, Zh.I. Alferov and D. Bimberg
“High power InGaAs/AlGaAs quantum dot laser”
Extended Abstracts of the Annual International Symposium „Nanostructures: Physics and
Technology“ St. Petersburg, 1997 202-205 (1997)
159
N.N. Ledentsov
“Submonolayer insertions in wide bandgap matrices: new principles for optoelectronics”
(invited).
Extended Abstracts of the Annual International Symposium „Nanostructures: Physics and
Technology“ St. Petersburg, 1997, 374-379 (1997)
32
158
N.N. Ledentsov, V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, M.V. Maximov, P.S. Kop’ev, and
Zh.I. Alferov, J.A. Lott and D. Bimberg
“Low threshold (<200 µA, 300 K) vertical cavity lasers based on vertically coupled
quantum dots emitting at 1 µm”
Extended Abstracts of the Annual International Symposium „Nanostructures: Physics and
Technology“ St. Petersburg, 1997, 195-198 (1997)
157
I.L. Krestnikov, M.V. Maximov, S.V. Ivanov, N.N. Ledentsov, S.V. Sorokin,
A.F. Tsatsul’nikov, O.G. Lyublinskaya, B.V. Volovik, P.S. Kop’ev and C.M. Sotomayor
Torres
“Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures”
Semiconductors 31, 127-131 (1997) - Fiz. Tekh. Poluprovodn. 31, 230-234 (1997)
156
M.V. Maximov, N.Yu. Gordeev, S.V. Zaitsev, P.S. Kop’ev, I.V. Kochnev, N.N. Ledentsov,
A.V. Lunev, S.S. Ruvimov, A.V. Sakharov, A.F. Tsatsul’nikov, Yu.M. Shernyakov,
Zh.I. Alferov and D. Bimberg
“Quantum dot injection laser with ultrahigh temperature stability of the threshold current
up to 50ºC”
Semiconductors 31, 124-126 (1997) - Fiz. Tekh. Poluprovodn. 31, 162-165 (1997).
155
A.F. Tsatsul’nikov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, N.N. Ledentsov,
M.V. Maksimov, A.V. Sakharov, A.A. Suvorova, P.S. Kop’ev, and Zh.I. Alferov
“Modulation of a quantum well potential by a quantum dot array”
Semiconductors 31, 88-91 (1997) - Fiz. Tekh. Poluprovodn. 31, 109-113 (1997)
154
A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, M.V. Maksimov, A.F. Tsatsul’nikov,
N.N. Ledentsov, N.Yu. Gordeev, S.V. Zaitsev, P.S. Kop’ev, and Zh.I. Alferov
“Thermal stability of vertically coupled InAs-GaAs quantum dot arrays”
Semiconductors 31, 84-87 (1997) - Fiz. Tekh. Poluprovodn. 31, 104-108 (1997)
153
A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maksimov, B.Ya. Mel’tser, P.V. Nekludov,
S.V. Shaposhnikov, B.V. Volovik, I.L. Krestnikov, A.V. Sakharov, N.A. Bert, P.S. Kop’ev,
Zh.I. Alferov and D. Bimberg
“Photoluminescence of InSb quantum dots in GaAs and GaSb matrices”
Semiconductors 31, 55-57 (1997) - Fiz. Tekh. Poluprovodn. 31, 68-71 (1997)
152
A.V. Sakharov, S.V. Ivanov, S.V. Sorokin, B.V. Volovik, I.L. Krestnikov, P.S. Kop’ev and
N.N. Ledentsov
“Room temperature lasing in a structure with CdSe quantum islands in a ZnMgSSe matrix
without external optical confinement”
Pis’ma v Zh. Tekhn. Fiz. 23 (8), 26-30 (1997) (Tech. Phys. Lett. 23 (1997))
151
I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, S.V. Ivanov, S.V. Sorokin,
L.N. Tenishev, P.S. Kop’ev, Zh.I. Alferov
”Generation of laser emission in CdSe submonolayer structures in a ZnSe matrix without
external optical confinement”
Pis’ma v Zh. Tekhn. Fiz. 23 (1), 33-38 (1997) (Tech. Phys. Lett. 23 (1997))
150
Yu.M. Shernyakov, A.Yu. Egorov, A.E. Zhukov, S.V. Zaitsev, A.R. Kovsh, I.L. Krestnikov,
A.V. Lunev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, V.M. Ustinov, Zhao Zhen,
P.S. Kop’ev, Zh.I. Alferov and D. Bimberg
“1 W room temperature continious wave operation of quantum dot injection heterolaser”
Pis’ma v Zh. Tekhn. Fiz. 23 (1), 51-54 (1997) (Tech. Phys. Lett. 23, (1997))
149
C. Guash, C.M. Sotomayor Torres, N.N. Ledentsov, D. Bimberg, V.M. Ustinov and P.S.
Kop’ev
“Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots”
Superlattices and Microstructures, 21, 509-516 (1997).
33
148
G.E. Cirlin, N.P. Korneeva, V.N. Demidov, V.N. Petrov, N.K. Polyakov, V.G. Dubrovskii,
G.M. Guryanov, N.N. Ledentsov and D. Bimberg
“Dynamics of 2D-3D transition during InAs on GaAs heteroepitaxial growth: RHEED study”
Inst. Phys. Conf. Ser. No 155, 821-824 (1997)
Paper presented at 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia,
23-27 September 1996
147
A.O. Kosogov, P. Werner, N.A. Bert, S.G. Konnikov, A.A. Suvorova, V.M. Ustinov,
N.N. Ledentsov, D. Bimberg, P. Schittenhelm, G. Abstreiter
“TEM study of nm-scale semiconductor islands in lattice-mismatched systems”
Inst. Phys. Conf. Ser. No 155, 851-854 (1997)
Paper presented at 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia,
23-27 September 1996
146
P.N. Brounkov, N.N. Faleev, Yu.G. Musikhin, A.A. Suvorova, V.M. Ustinov, A.E. Zhukov,
A.Yu. Egorov, M.V. Maximov, A.F. Tsatsul’nikov, N.N. Ledentsov, P.S. Kop’ev and
S.G. Konnikov
“New method for quantitative characterization of ordered QD arrays” (invited paper)
Inst. Phys. Conf. Ser. No 155, 841-850 (1997)
Paper presented at 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia,
23-27 September 1996
145
V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, A.F. Tsatsul’nikov, M.V. Maximov,
S.V. Zaitsev, N.Yu. Gordeev, P.S. Kop’ev and Zh.I. Alferov, N.N. Ledentsov and D. Bimberg
“Extremely low threshold AlGaAs/InGaAs quantum dot injection laser”
Inst. Phys. Conf. Ser. No 155, 557-560 (1997)
Paper presented at 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia,
23-27 September 1996
144
M.V. Maximov, I.V. Kochnev, Yu.M. Shernyakov, S.V. Zaitsev, N.Yu. Gordeev,
A.F. Tsatsul’nikov, A.V. Sakharov, I.L. Krestnikov, P.S. Kop’ev, Zh.I. Alferov,
N.N. Ledentsov and D. Bimberg
“InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0=385 K)
grown by metal organic chemical vapor deposition”
Inst. Phys. Conf. Ser. No 155, 809-812 (1997)
Paper presented at 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia,
23-27 September 1996
143
I.V. Kochnev, N.N. Ledentsov, M.V. Maximov, A.F. Tsatsul’nikov, A.V. Sakharov,
B.V. Volovik, P.S. Kop’ev, Zh.I. Alferov, J. Böhrer, D. Bimberg, A.O. Kosogov,
S.S. Ruvimov, P. Werner, and U. Gösele
“Growth and characterization of coherent quantum dots formed by single- and multi-cycle
InGaAs-GaAs metal-organic chemical vapor deposition”.
Inst. Phys. Conf. Ser. No 155, 837-840 (1997)
Paper presented at 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia,
23-27 September 1996
1996
142
V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, N.N. Ledentsov, M.V. Maximov,
A.F. Tsatsul’nikov, N.A. Bert, A.O. Kosogov, P.S. Kop’ev, D. Bimberg, and Zh.I. Alferov
“Formation of stacked self-assembled InAs quantum dots in GaAs matrix for laser
applications”
in: Optoelectronic Materials: Ordering, Composition Modulation, and Self-Assembled
Structures, E.D. Jones, A. Mascarehas, P. Petroff, eds., Materials Research Society,
Symposium Proceedings, Symposium held November 28-30, 1995, Boston, Volume 417,
Pittsburgh, 1996, pp. 141-146
34
141. M. Grundmann, N.N. Ledentsov, R. Heitz, O. Stier, N. Kirstaedter and D. Bimberg,
S. Ruvimov, A.O. Kosogov, P. Werner, J. Heydenreich and U. Gösele, V.M. Ustinov, M.
Maximov, A.Yu. Egorov, P.S. Kop'ev and Zh.I. Alferov
“InAs/GaAs Quantum Dots: Single Sheets, Stacked Dots and Vertically Coupled Dots”
Proc. 3rd Int. Symp. on Quantum Confinement (ECS-188, Chicago, USA), PV 75-17 (The
Electrochemical Society, Pennington, USA), p. 80 (1996)
140
V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, A.F. Tstsul’nikov, N.N. Ledentsov,
N.Yu. Gordeev, S.V. Zaitsev, Yu.M. Shernyakov, N.A. Bert, A.O. Kosogov, P.S. Kop’ev,
D. Bimberg and Zh.I. Alferov,
“Room Temperature CW Operation of Quantum Dot Injection Laser” (invited talk)
Abstracts of Invited Lectures and Contributed Papers of the 4th International Symposium
"Nanostructures: Physics and Technology", Ioffe Institute, St. Petersburg, Russia, June
24-28, 1996, pp. 343-346.
139
P.D. Wang, J.L. Merz, S. Fafard, R. Leon, D. Leonard, G. Medeiros-Ribeiro, M. Oestreich,
P.M. Petroff, N.N. Ledentsov, P.S. Kop’ev, V.M. Ustinov, K. Uchida, N. Miura, H. Akiyama,
C.M. Sotomayor Torres
“Magneto-optical properties of InAs monolayers and InyAl1-yAs self-assembled quantum
dots in Ga(Al)As matrices”
Physica B 227, 378-383 (1996)
138
V.M.Ustinov, A.E.Zhukov, A.Yu.Egorov, N.N.Ledentsov, M.V.Maksimov, A.F.Tsatsul`nikov,
P.S.Kop`ev, D.Bimberg, and Zh I.Alferov,
MBE growth of (In,Ga)As self-assembled quantum dots for optoelectronic applicatinos
in: Deviced Based on Low-Dimensional Semiconductor Structures, Kluwer Academic
Publishers, 1996, ed. by M.Balkanski, NATO ASI Series 3: High Technology - Vol. 14, pp.9194.
137
O.G. Schmidt, N. Kirstaedter, N.N. Ledentsov, M.-H. Mao, D.Bimberg, V.M.Ustinov,
A.Y. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop’ev and Zh.I. Alferov
“Prevention of gain saturation by multi-layer quantum dot lasers”
Electronics Lett. 32, 1302 (1996)
136
A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maximov, A.Yu. Egorov, A.E. Zhukov,
S.S. Ruvimov, V.M. Ustinov, V.V. Komin, I.V. Kochnev, P.S. Kop’ev, Zh.I. Alferov, and
D. Bimberg
“Identification of radiative recombination channels in quantum dot structures”
Semiconductors 30, 938-943 (1996) - Fiz. Tekh. Poluprovodn. 30, 1793-1804 (1996)
135
A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maximov, A.Yu. Egorov, A.E. Zhukov,
V.M. Ustinov, B.V. Volovik, I.L. Krestnikov, A.R. Kovsh, A.V. Sakharov, N.A. Bert,
P.S. Kop’ev, Zh.I. Alferov, and D. Bimberg
“Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a
GaAs (100) matrix”
Semiconductors 30, 953-958 (1996) - Fiz. Tekh. Poluprovodn. 30, 1822-1830 (1996)
134
A.O. Kosogov, P. Werner, U. Gösele, N.N. Ledentsov, D. Bimberg, V.M. Ustinov,
A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, N.A. Bert, and Zh.I. Alferov
“Structural and optical properties of InAs - GaAs quantum dots subjected to high
temperature annealing”
Appl. Phys. Lett. 69, 3072-3074 (1996)
133
D. Bimberg, M. Grundmann and N.N. Ledentsov
„Quantenpunkt-Laser“
Spectrum der Wissenschaft, November 1996, 63, 64-68
132
A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, N.N. Ledentsov, M.V. Maximov, V.M. Ustinov, A.F.
Tsatsul’nikov, N.A. Bert, A.O. Kosogov, and Zh.I. Alferov
35
„Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs (100)
matrix”
Fiz. Tekh. Poluprovodn. 30, 1682 (1996) [Semiconductors 30, 879 (1996)]
131
N.N. Ledentsov, N. Kirstaedter, and D. Bimberg
Comments on “Lasing at Three-Dimensionally Quantum-Confined Sublevels of SelfOrganized In0.5Ga0.5As Quantum Dots by Current Injection”
IEEE Photonics Technol. Lett. 8, 1276 (1996)
130
N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O. Schmidt, R. Heitz, J. Böhrer, D.
Bimberg, V.M. Ustinov, V.A. Shchukin, P.S. Kop’ev, Zh.I. Alferov, S.S. Ruvimov,
A.O. Kosogov, P. Werner, U. Richter, U. Gösele and J. Heydenreich
“Ordered Arrays of Quantum Dots:
Formation, Electronic Spectra, Relaxation Phenomena, Lasing”
invited talk on the 7th International Conference on Modulated Semiconductor Structures,
Madrid, 10-14 July, 1995, Solid State Electronics, 40, 785-798 (1996).
129
A.A. Sirenko, T.Ruf, N.N. Ledentsov, A.Yu. Egorov, P.S. Kop’ev, V.M. Ustinov, and
A.E. Zhukov
“Resonant spin-flip Raman scattering and localized exciton luminescence in
submonolayer InAs-GaAs structures”
Solid State Commun. 97, 169-174 (1996)
128
M.Grundmann, N.N. Ledentsov, O. Stier, D.Bimberg, V.M.Ustinov, P.S.Kop’ev and
Zh.I.Alferov
“Excited states in self-organized InAs quantum dots: Theory and experiment”
Appl.Phys.Lett. 68, 979 (1996)
127
Zh.I. Alferov, N.Yu. Gordeev, S.V. Zaitsev, P.S. Kop’ev, I.V. Kochnev, V.V. Komin,
I.L. Krestnikov, N.N. Ledentsov, A.V. Lunev, M.V. Maximov, S.S. Ruvimov, A.V. Sakharov,
A.F. Tsatsulnikov, Yu.M. Shernyakov and D. Bimberg
“Low threshold current density injection heterolaser based on self-organized quantum
dots formed by metal-organic vapour phase deposition”
Fizika i Tekhn. Poluprovodn. 30, 357-363 (1996) - Semiconductors 30, 197-200 (1996).
126
Zh.I. Alferov, N.A. Bert, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, I.L. Krestnikov,
N.N. Ledentsov, A.V. Lunev, M.V. Maximov, A.V. Sakharov, V.M. Ustinov,
A.F. Tsatsulnikov, Yu.M. Shernyakov and D. Bimberg
„Injection heterolaser based on vertically-coupled quantum dots in a GaAs matrix”
Fizika i Tekhn. Poluprovodn. 30, 351-356 (1996) (Semiconductors 30, 194-196 (1996))
125
M. Grundmann, R. Heitz, N.N. Ledentsov, O. Stier, D. Bimberg, V.M. Ustinov, P.S. Kop’ev,
Zh.I. Alferov, S.S. Ruvimov, P. Werner, U. Gösele and J. Heydenreich
„Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids”
Superlattices and Microstructures 19, 81-95 (1996)
124
P.D. Wang, N.N. Ledentsov, C.M. Sotomayor Torres, A.E. Zhukov, P.S. Kop’ev and
V.M. Ustinov
“Resonant exciton effects in InAs monolayer insertions in a GaAs matrix”
J. Appl. Phys. 79, 7164-7168 (1996)
123
M.Grundmann, N.N.Ledentsov, R.Heitz, D.Bimberg, V.M.Ustinov, A.Yu.Egorov,
M.V.Maximov, P.S.Kop’ev, Zh.I.Alferov, A.O.Kosogov, P.Werner, J.Heydenreich, U.Gösele
“Growth, characterisation, theory and lasing of vertically stacked quantum dots”
Proc. 8th Int. Conf. on Indium Phosphide and Related Materials, Schwabish-Gmund, 1996,
Germany.
36
122
O. Schmidt, N. Kirstaedter, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, A.Yu. Egorov,
A.E. Zhukov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov
“InAs/GaAs quantum dot lasers”
Proc. 8th Conference on Indium Phosphide and Releted Materials, Schwabish-Gmund,
1996, Germany.
121
M.Grundmann, N.N.Ledentsov, O. Stier, D.Bimberg, V.M.Ustinov, P.S. Kop’ev and
Zh.I.Alferov
“Nature of optical transitions in self-organized InAs/GaAs quantum dots”
Phys. Rev. B 53, R10509-R1051 (1996)
120
S.V. Ivanov, N.N.Ledentsov, M.V. Maximov, A.A. Toropov, T.V. Sgubina, S.V. Sorokin, P.S.
Kop’ev, H.S. Park, D.R. Kim, E.S. O, H.D. Jong and S.H. Park
“Luminescence of undoped and chlorine-doped Zn1-xCdx Se and Zn1-xMgxSySe1-y layers
obtained by molecular beam epitaxy”
Fiz. i Tekh. Poluprovodn. 30, 82-91 (1996) (Semiconductors 30, 46-49 (1996))
119
D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Mao,
V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov, S.S. Ruvimov,
U. Gösele and J. Heydenreich
“InAs-GaAs quantum dots: From growth to lasers”
phys. stat. sol. (b) 194, 159-173 (1996)
118
J. Brübach, J.E.M. Haverkort, J.H. Wolter, P.D. Wang, N.N. Ledentsov, C.M. Sotomayor
Torres
“Exciton dynamics in ultrathin InAs/GaAs quantum wells”
Mat. Res. Soc. Symp. Proc. Vol. 406, 1996, Materials Research Society, pp. 283-288
117
V.A. Shchukin, A.I. Borovkov, N.N. Ledentsov, P.S. Kop’ev, M. Grundmann, and D. Bimberg
“Stress-induced formation of ordered nanostructures on crystal surfaces”
Phys. Low-Dim. Struct. 12, 43-50 (1995)
116
V.A. Shchukin, N.N. Ledentsov, M. Grundmann, P.S. Kop’ev and D. Bimberg
“Strain-induced formation and tuning of ordered nanostructures on crystal surfaces”
Surface Science 352-354, 117-122 (1996)
115
N.N. Ledentsov, J. Böhrer, D. Bimberg, I.V. Kochnev, M.V. Maximov, P.S. Kop’ev,
Zh.I. Alferov, A.O. Kosogov, S.S. Ruvimov, P.Werner and U. Gösele
“Formation of coherent superdots using metal-organic chemical vapor deposition”
Appl. Phys. Lett. 69, 1095 (1996)
114
N.N. Ledentsov
“Ordered arrays of quantum dots” (plenary paper)
Proceedings of the 23rd International Conference on the Physics of Semiconductors,
Berlin, Germany, July 21-26, 1996, Ed. by M. Scheffler and R. Zimmermann (World
Scientific, Singapoure, 1996), v. 1, p. 19.
113
I.L. Krestnikov, M.V. Maximov, S.V. Ivanov, S.L. Sorokin, S.A. Permogorov, A.N. Reznitsky,
A.V. Kornievski, N.N. Ledentsov, D. Bimberg and C.M. Sotomayor Torres
“Direct evidence of ground state exciton lasing in submonolayer CdSe-(Zn,Mg)(S,Se)
structures”
Proceedings of the 23rd International Conference on the Physics of Semiconductors,
Berlin, Germany, July 21-26, 1996, Ed. by M. Scheffler and R. Zimmermann (World
Scientific, Singapoure, 1996), v. 1, p. 3187.
112
N.N. Ledentsov, J. Böhrer, D. Bimberg, S.V. Zaitsev, V.M. Ustinov, A.Yu. Egorov,
A.E. Zhukov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov, A.O. Kosogov, U. Gösele and
S.S. Ruvimov
“3D arrays of quantum dots for laser applications”
37
in: Compound Semiconductor Electronics and Photonics. Symposium. (Compound
Semiconductor Electronics and Photonics. Symposium, San Francisco, CA, USA, 8-10
April 1996). Edited by: Shul, R.J.; Pearton, S.J.; Ren, F.; Wu, C.-S. Pittsburgh, PA, USA:
Mater. Res. Soc, 1996. p. 133-8.
Mat. Res. Soc. Symp. Proc. Vol. 421, 133 (1996)
111
S. Ruvimov, Z. Liliental-Weber, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov,
A.Yu. Egorov, P.S. Kop’ev, Zh.I. Alferov, K. Scheerschmidt, and U. Gösele
“TEM structural characterization of nm-scale islands in highly mismatched systems”
in: Compound Semiconductor Electronics and Photonics. Symposium. (Compound.
Semiconductor Electronics and Photonics. Symposium, San Francisco, CA, USA, 8-10
April 1996). Edited by: Shul, R.J.; Pearton, S.J.; Ren, F.; Wu, C.-S. Pittsburgh, PA, USA:
Mater. Res. Soc, 1996. p. 383-8.
Mat. Res. Soc. Symp. Proc. Vol. 421, 383-8 (1996)
110
N.N. Ledentsov, V.A. Shchukin, M. Grundmann, N. Kirstaedter, J. Böhrer, O. Schmidt,
D. Bimberg, S.V. Zaitsev, V.M. Ustinov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov,
A.O. Kosogov, S.S. Ruvimov, P. Werner, U. Gösele and J. Heydenreich
“Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth”
Phys. Rev. B 54, 8743-8750 (1996).
109
N.N. Ledentsov, I.L. Krestnikov, M.V. Maximov, S.V. Ivanov, S.L. Sorokin, P.S. Kop’ev, Zh.I.
Alferov, D. Bimberg, C.M. Sotomayor Torres
“Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix”.
Appl. Phys. Lett. 69, 1343 (1996)
108
A.O. Kosogov, P. Werner, N.N. Ledentsov, V.M. Ustinov, I.V. Kochnev, M.V. Maximov, N.A.
Bert, P.S. Kop’ev, U. Gösele, and D. Bimberg
“Vertically coupled (InGaAs) quantum dots in a GaAs matrix”
Proc. 9th International Conference on Semiconductor Microstructures and Microdevices,
Liege, July 1996, Superlattices and Microstructures, in print.
107
S.V. Zaitsev, N.Yu. Gordeev, Yu.M. Sherniakov, V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov,
M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, N. Kirstaedter and D. Bimberg
“Radiation characteristics of injection lasers based on vertically coupled quantum dots”
Proc. 9th International Conference on Semiconductor Microstructures and Microdevices,
Liege, July 1996, Superlattices and Microstructures 21, 559-564 (1997).
106
P.S. Kop’ev, N.N. Ledentsov, V.M. Ustinov, I.V. Kochnev, N.A. Bert, A.Yu. Egorov,
A.E. Zhukov, V.V. Komin, A.O. Kosogov, I.L. Krestnikov, M.V. Maximov, S.S. Ruvimov, V.A.
Shchukin, Yu.M. Shernyakov, A.F. Tsatsul’nikov, S.V. Zaitsev, Zh.I. Alferov and D. Bimberg
“Self-organized InAs-GaAs quantum dots injection laser structures” (invited paper)
Proceedings CLEO’96, Anaheim, Califonia, USA, p. 129
105
O.G. Schmidt, N. Kirstaedter, M.-H. Mao, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, A.Yu.
Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop’ev and Zh.I. Alferov
“Overcoming gain saturation in InAs/GaAs quantum dot lasers”
Proceedings LEOS’96, USA.
104
N. Kirstaedter, O.G. Schmidt, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E.
Zhukov, M.V. Maximov, P.S. Kop’ev and Zh.I. Alferov
“Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers”
Appl. Phys. Lett. 69, 1226 (1996)
103
V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, A.E. Zhukov, M.V. Maximov, A.F. Tsatsul’nikov,
N.Yu. Gordeev, S.V. Zaitsev, Yu.M. Shernyakov, N.A. Bert, P.S. Kop’ev and Zh.I. Alferov,
N.N. Ledentsov, J. Böhrer, D. Bimberg, A.O. Kosogov, P. Werner, U. Gösele
“Low threshold injection lasers based on vertically coupled quantum dots” (invited paper)
Proc. Int. Conf. on Molecular Beam Epitaxy, Malibu, USA, August, 5-9, 1996, Journal of
Crystal Growth 175/176, 689-695 (1997).
38
102
J. Brübach, J.E.M. Haverkort, J.H. Wolter, P.D. Wang, N.N. Ledentsov, C.M. Sotomayor
Torres, A.E. Thukov, P.S. Kop’ev and V.M. Ustinov
“Dynamics of doubly resonant Raman scattering and resonant luminescence in ultrathin
InAs/GaAs quantum wells”
J. Opt. Soc. Am. B/Vol. 13, No. 6/ June 1996, 1224-1231 (1996)
101
N.N. Ledentsov, V.M. Ustinov, S.V. Ivanov, B.Ya. Meltser, M.V. Maximov, P.S. Kop’ev,
D. Bimberg and Zh.I. Alferov
“Ordered arrays of quantum dots in semiconductor matrices” (invited)
Uspekhi Fizicheskih Nauk, 166, 423-428 (1996) (translated in Uspehi).
100
P.N. Brunkov, S.G. Konnikov, V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, N.N.
Ledentsov and P.S. Kop’ev
“Capacitance spectroscopy of electron energy levels in InAs quantum dots in a GaAs
matrix”
Fizika i Tekhn. Poluprovodn. 30, 924-933 (1996) [Semiconductors 30, 492-496 (1996)]
99
V.N. Zhmerik, S.V. Ivanov, M.V. Maximov, V.M. Kuznetsov, N.N. Ledentsov, S.V. Sorokin,
S.N. Domrashev, N.M. Shmidt, I.L. Krestnikov, and P.S. Kop’ev
„Doping of ZnSe during molecular-beam epitaxy using a high-efficiency source of active
nitrogen”
Fiz. Tekh. Poluorovodn. 30, 1071-1084 (1996) [Semiconductors 30, 568-574 (1996)]
98
G.M. Guryanov, G.E. Cirlin, A.O. Golubok, S.Ya. Tipissev, N.N. Ledentsov, V.A. Shchukin,
M. Grundmann, D. Bimberg and Zh.I. Alferov
“An intermediate (1-1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs (100)
during submonolayer molecular beam epitaxy”
Surf. Sci. 352-254, 646-650 (1996)
97
G.M. Guryanov, G.E. Cirlin, V.N. Petrov, N.K. Polyakov, A.O. Golubok, S.Ya. Tipissev,
V.B. Gubanov, Yu.B. Samsonenko, N.N. Ledentsov, V.A. Shchukin, M. Grundmann,
D. Bimberg and Zh.I. Alferov
“RHEED and STM study of 2D-3D transition during InAs/GaAs heteroepitaxial growth”
Surf. Sci. 352-254, 651-655 (1996)
96
R.Heitz, M.Grundmann, N.N. Ledentsov, L.Eckey, M.Veit, D.Bimberg, V.M.Ustinov, A.Yu.
Egorov, A.E.Zhukov, P.S.Kop’ev and Zh.I.Alferov
“Multiphonon-relaxation processes in self-organized quantum dots”
Appl. Phys. Lett. 68, 361 (1996)
95
V.A. Shchukin, N.N. Ledentsov, V.G. Malyshkin, I.P. Ipatova, P.S. Kop'ev, and D. Bimberg.
“Thermodynamic theory of spontaneous ordering of semiconductor nanostructures”
(invited talk)
International Symposium “Nanostructures: Physics and Technology”. St. Petersburg,
Russia, June 24-28, 1996. Abstracts of the International Symposium “Nanostructures:
Physics and Technology”. St. Petersburg, Russia, June 24-28, pp.439-442.
1995
94
V.A. Shchukin, A.I. Borovkov, N.N. Ledentsov and D. Bimberg
“Tuning and breakdown of faceting under externally applied stress”
Phys. Rev. B 51, 10104-10118 (1995)
93.
C.M. Sotomayor Torres, P.D. Wang, N.N. Ledentsov, Y.-S. Tang, H. Qiang, F.H. Pollak,
H.F. Ghaemi and B.B. Goldberg
“Luminescence from semiconductor quantum wires, quantum dots and monolayer
quantum wells: bottleneck and localization issues.”
Scanning Microscopy Supplememnt 9, 197-209 (1995)
39
Soros
92. S.V. Zaitsev, N.Yu. Gordeev, M.P. Soshnikov, A.V. Lunev, A.Y. Egorov, A.E. Zhukov,
V.M. Ustinov, N.N. Ledentsov, P.S. Kop'ev,
“Pecularities of recombination processes in injection lasers based on (In,Ga)As quantum
dots leading to the single longitudinal mode operation at room temperature”
Proceedings of SPIE Volume: 2648, International Conference on Optical Diagnostics of
Materials and Devices for Opto-, Micro-, and Quantum Electronics, Editor(s):
S.V. Svechnikov, M.Y. Valakh, (1995).
91
V.A. Shchukin, N.N. Ledentsov, P.S. Kop'ev, and D. Bimberg.
“Spontaneous ordering of arrays of quantum dots”.
Proc. International Semiconductor Device Research Symposium. December 1995,
Charlottesville, Virginia, USA, V.2, pp.581-584.
90
M. Grundmann, N.N. Ledentsov, R. Heitz, L. Eckey, J. Christen, J. Böhrer, D. Bimberg, S.S.
Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov,
A.E. Zhukov, P.S. Kop’ev and Zh.I. Alferov
InAs/GaAs quantum dots:
“Radiative recombination from zero-dimensional states”
phys. stat. sol. (b), 188, 249 (1995)
89
N.N. Ledentsov, M.V. Maximov, P.S. Kop'ev, V.M. Ustinov, M.V. Belousov, B.Ya. Meltser,
S.V. Ivanov, V.A. Shchukin, Zh.I. Alferov, M. Grundmann, D. Bimberg, S.S. Ruvimov, W.
Richter, P. Werner, U. Gösele, U. Heidenreich, P.D. Wang and C.M. Sotomayor Torres
“Optical spectroscopy of self-organized nanoscale heterostructures involving high-index
surfaces”
Microelectronics Journal 26, 871 (1995)
88
M. Grundmann, J. Christen, N.N. Ledentsov, J. Böhrer, D. Bimberg, S.S. Ruvimov,
P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov,
P.S. Kop’ev and Zh.I. Alferov
“Ultranarrow luminescence lines from single quantum dots”
Phys. Rev. Lett. 74, 4043 (1995)
87
S.S. Ruvimov, P. Werner, K. Scheerschmidt, U. Gösele, J. Heydenreich, U. Richter, N.N.
Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop’ev and Zh.I.
Alferov
“Structural characterization of (In,Ga)As quantum dots in a GaAs matrix”
Phys. Rev. B 51, 14766 (1995)
86
G.E. Cirlin, G.M. Guryanov, A.O. Golubok, S.Ya. Tipissev, N.N. Ledentsov, P.S. Kop’ev, M.
Grundmann and D. Bimberg
“Ordering phenomena in InAs strained layer morphological
transformation on GaAs (100) surface”
Appl.Phys.Lett. 67, 97 (1995)
85
N.N. Ledentsov, J. Böhrer, M. Beer, F. Heinrichsdorff, M. Grundmann, D. Bimberg, S.V.
Ivanov, B.Ya. Meltser, I.N. Yassievich, N.N. Faleev, P.S. Kop’ev, and Zh.I.Alferov
“Radiative States in type-II GaSb/GaAs quantum wells”
Phys.Rev. B 52, 14058-14066 (1995)
84
M.V. Belousov, N.N. Ledentsov, M.V. Maximov, P.D. Wang, I.N. Yassievich, N.N. Faleev, I.A.
Kozin, V.M. Ustinov, P.S. Kop’ev and C.M. Sotomayor Torres
“Energy levels and exciton oscillator strength in submonolayer InAs-GaAs
heterostructures”
Phys.Rev. B 51, 14346 (1995)
40
83
F. Hatami, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, S.S. Ruvimov,
P. Werner, U. Gösele, J. Heydenreich, U. Richter, S.V. Ivanov, B.Ya. Meltser, P.S. Kop’ev,
and Zh.I. Alferov
“Radiative Recombination in Type-II GaSb/GaAs Quantum Dots”
Appl.Phys.Lett. 67, 656 (1995)
82
G.M. Guryanov, G.E. Cirlin, V.N. Petrov, N.K. Polyakov, A.O. Golubok, S.Ya. Tipissev,
E.P. Musikhina, V.B. Gubanov, Yu. B. Samsonenko and N.N. Ledentsov
“Formation of InAs/GaAs quantum dots by submonolayer molecular beam epitaxy”
Surf. Sci. 331-333, 414 (1995)
81
G.E. Tsyrlin, A.O. Golubok, S.Ya. Tipisev and N.N. Ledentsov
“InAs/GaAs quantum dots obtained by submonolayer migration-enhanced epitaxy”
Semiconductors 29, 884-886 (1995) (Fizika i Tekhnika Poluprovodn. 29, 1697-1701 (1995))
80
N.N. Ledentsov, M.V. Maximov, G.E. Tsyrlin, V.N. Petrov and G.M. Gur’yanov
“Luminescence properties of InAs quantum dots on vicinal GaAs surface”
Semiconductors 29, 671-673 (1995) (Fizika i Tekhnika Poluprovodn. 29, 1295-1300 (1995))
79
G.M. Gur’anov, G.E. Tsyrlin, V.N. Petrov, Yu.B. Samsonenko, V.B. Gubanov,
N.K. Polyakov, A.O. Golubok, S.Ya. Tipisev, E.P. Misikhina and N.N. Ledentsov
“Self-organization of strained quantum-size InxGa1-xAs structures grown on misoriented
(100) surfaces of GaAs during submonolayer molecular-beam epitaxy”
Semiconductors 29, 854-857 (1995) (Fizika i Tekhnika Poluprovodn. 29, 1642-1648 (1995))
78
V.A. Shchukin, A.I. Borovkov, N.N. Ledentsov and P.S. Kop’ev
“Theory of quantum wire formation on corrugated surfaces”
Phys. Rev. B 51, 17767-17779 (1995)
77
V.A. Shchukin, N.N. Ledentsov, P.S. Kop’ev and D. Bimberg
“Spontaneous ordering of arrays of coherent strained islands”
Phys.Rev. Lett.75, 2968 (1995).
76
P.D. Wang, N.N. Ledentsov, C.M. Sotomayor Torres, P.S. Kop’ev and V.M. Ustinov
“Response to Comment: "Comment on "Optical characterization of submonolayer and
monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces"”
Appl.Phys.Lett. 66, 112-113 (1995)
75
N.N. Ledentsov, S.V. Ivanov, M.V. Maximov, I.V. Sedova, I.G. Tabatadze and P.S. Kop’ev
“Luminescence of localized electron-hole pairs in the fundamental absorption region of
Zn(S,Se) - Zn,Cd)Se quantum well structures”
Semiconductors 29, 34 (1995)
74
G. Armelles, P. Castrillo, P.D. Wang, C.M. Sotomayor Torres, N.N. Ledentsov and N.A. Bert
“Interface structure of GaAs/AlAs superlattices grown on (113) surfaces: Raman scattering
studies”
Solid State Commun. 94, 613-617 (1995)
73
Zh.I. Alferov, D. Bimberg, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, N.N. Ledentsov,
S.S. Ruvimov, V.M. Ustinov and J. Heydenreich
“Strained submonolayer heterostructures and quantum dot heterostructures”
Uspehi Fizicheskih Nauk 165, 224 (1995)
72
D. Bimberg, M. Grundmann, N.N. Ledentsov,S.S. Ruvimov, P. Werner, U. Richter, U.
Gösele, J. Heydenreich, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov,
„Self-organization processes in MBE-grown quantum dot structures”
Thin Solid Films 267, 32-36 (1995)
41
71
D. Bimberg, N.N. Ledentsov, N.Kirstaedter, O. Schmidt, M. Grundmann, V.M. Ustinov,
A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov, S.S. Ruvimov,
U. Gösele, J. Heydenreich,
“InAs-GaAs quantum dot lasers: in situ growth, radiative lifetimes and polarization
properties”
Proceedings of the 1995 International Conference on Solid State Devices and Materials,
August 21-24, 1995, Osaka, Japan. pp.716-718
Jpn. J. Appl. Phys. 35, 1311-1319 (1996)
70
N. Kirstaedter, O. Schmidt, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov,
A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov, A.O. Kosogov, U.
Gösele and J. Heydenreich
“Static and dynamic properties of (InGa)As/GaAs quantum dot lasers”
Proc. 8th Annual Meeting of IEEE Lasers and Electro-Optics Society, San Francisco, USA,
Vol. 1, 1995, p. 290
69
V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, N.N. Ledentsov, A.V. Lunev, M.V. Maximov,
A.F. Tsatsulnikov, N.A. Bert, A.O. Kosogov, P.S. Kop’ev, D. Bimberg and Zh.I. Alferov,
“Formation of stacked self-assembled InAs quantum dots in a GaAs matrix for laser
applications.”
Proceedings of the Material Research Society Full Meeting, November 27 - December 1,
1995, Boston, USA.
68
S.V. Ivanov, A.A. Boudza, R.N. Kutt, N.N. Ledentssov, B.Ya. Meltser, S.S. Ruvimov,
S.V. Shaposhnikov, P.S. Kop’ev
“Molecular beam eepitaxial growth of InSb/GaAs(100) and InSb/Si(100) heteroepitaxial
layers (thermodynamic analysis and characterization)”
J. Crystal Growth 156, 191-205 (1995)
67
D. Bimberg, N.N. Ledentsov, Kirstaedter, O.Schmidt, M. Grundmann, V.M. Ustinov,
A.Yu.Egorov, A.E.Zhukov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov, S.S. Ruvimov, U.
Gösele and J. Heydenreich
“InAs-GaAs quantum dot lasers: in situ growth, radiative lifetimes and polarization
properties”.
Ext. Abstracts of the 1995 Int.Conf. on Solid State Devices and Materials (ssdm ‘95), p.716
66
S.S. Ruvimov, P. Werner, K. Scheerschmidt, U. Richter, U. Gösele, J. Heydenreich, N.N.
Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop’ev and Zh.I.
Alferov
“TEM/HREM characterization of self-organized (In,Ga)As quantum dots”
Inst. Phys. Conf. Ser. No 146, 31-34 (1995)
Paper presented at Microsc. Semicond. Mater. Conf., Oxford, 20-23 March 1995
65
V.A. Shchukin, N.N. Ledentsov, P.S. Kop'ev, and D. Bimberg.
“Theory of spontaneous ordering of arrays of coherent strained islands”.
Abstracts of International Symposium “Nanostructures: Physics and Technology”, St.
Petersburg, Russia, June 26-30, 1995. P.392-395.
1994
64
P.D. Wang, N.N. Ledentsov, C.M. Sotomayor Torres, P.S.Kop’ev and V.M. Ustinov
“Optical characterization of submonolayer and monolayer InAs structures grown in a
GaAs matrix on (100) and high-index surfaces”
Appl.Phys.Lett. 64, 1526-1528 (1994)
63
S.T. Cundiff, E.O. Göbel, V.P. Kochereshko, D.R. Yakovlev, P.S. Kop’ev, N.N. Ledentsov
“Transient-four-wave-mixing studies of GaAs micro-crystallites”
Solid State Communications 92, 467-471 (1994)
42
62
C.M. Sotomayor Torres, P.D. Wang, N.N. Ledentsov, Y.-S. Tang,
“Optical processes in quantum dots and wires“ (review)
Proceedings of the SPIE - The International Society for Optical Engineering, vol.2141, 2-19
(1994)
61
N.N. Ledentsov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, I.G. Tabatadze,
P.S. Kop’ev
“Optical properties of heterostructures with InGaAs-GaAs quantum clusters”
Semiconductors 28, 832-834 (1994), submitted December 29th 1993.
60
A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, N.N. Ledentsov, M.V. Maksimov, V.M. Ustinov
“Effect of deposition conditions on the formation of (In,Ga)As quantum clusters in a GaAs
matrix”
Semiconductors 28, 809-811 (1994)
59
M.V. Maksimov, A.Yu. Egorov, A.E. Zhukov, S.V.Ivanov, P.S. Kop’ev, N.N. Ledentsov, B.Ya.
Meltser, I.G. Tabatadze, V.M. Ustinov
“Optical study of GaAs/AlAs structures with isolated GaAs clusters grown on a surface
with high Miller inices”
Semiconductors 28, 604-608 (1994)
58
N.N . Ledentsov, G.M. Gur’yanov, G.E. Tsyrlin, V.N. Petrov, Yu.B. Samsonenko,
A.O.Golubok, Tipisev S.A.
“Effect of heat treatment conditions on the surface morphology of gallium arsenide grown
on vicinal GaAs (100) substrates by molecular beam epitaxy”
Semiconductors 28, 526-527 (1994)
57
P.D. Wang, N.N. Ledentsov, C.M. Sotomayor Torres, S.V. Ivanov, B.Ya. Meltser, P.S. Kop’ev
“Resonant Raman scattering studies of multilayer (In,Ga,Al)(As,Sb) heterostructures with
InAs quantum wells”
Solid State Communications 91, 361-365 (1994)
56
A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, N.N. Ledentsov, M.V. Maksimov, V.M. Ustinov
“Growth of (In,Ga)As/GaAs quantum well heterostructures through the deposition of
"submonolayer" strained InAs layers”
Semiconductors 28, 363-366 (1994)
55
M.V. Maksimov, S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, B.Ya. Meltser, I.G. Tabatadze,
M.V. Stepanov, V.M. Ustinov
“Study of quantum well heterostructures by selective-luminescense excitation
spectroscopy”
Semiconductors 28, 359-362 (1994)
54
A.O. Golubok, G.M. Gur’yanov, V.N. Petrov, Yu.B. Samsonenko, S.Ya. Tipisev, G.E. Tsyrlin,
N.N. Ledentsov
“Formation of array of facets on vicinal surfaces of GaAs (100) during molecular beam
epitaxy”
Semiconductors 28, 317-319 (11994)
53
C.M. Sotomayor Torres, P.D. Wang, Y.-S. Tang, N.N. Ledentsov
“Quantum dots for optoelectronics”
IEE Colloquium on "Microelectronics and Optics" (Didgest No.1994/043)
IEE, 3/1-6 (1994)
52
N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, U. Richter, S.S. Ruvimov, P.
Werner, J. Heydenreich, V.M. Ustinov, M.V. Maximov, P.S. Kop’ev, and Zh.I. Alferov
“Low threshold, large T0 injection laser emission from (InGa)As quantum dots”
Electronics Letters 30, 1416 (1994)
43
51
P.D. Wang, N.N. Ledentsov, C.M. Sotomayor Torres, I.N. Yassievich. A. Pakhomov,
A.Yu. Egorov, P.S.Kop’ev and V.M. Ustinov
“Magneto-optical studies in ultrathin InAs-GaAs quantum wells”
Phys.Rev. B50, 1604 (1994)
50
N.N. Ledentsov, P.D. Wang, C.M. Sotomayor Torres, A.Yu. Egorov, M.V. Maximov,
V.M. Ustinov, A.E. Zhukov, P.S. Kop’ev
“Optical spectroscopic studies of InAs layer transformation on GaAs surfaces”
Phys. Rev. B50, 12171 (1994)
49
Zh.I. Alferov, S.V. Ivanov, P.S. Kop’ev, A.V. Lebedev, N.N. Ledentsov, M.V. Maximov, I.V.
Sedova, T.V. Shubina, A.A. Toropov
“Exciton-induced enhancement of optical waveguide confinement in (Zn,Cd)(Se,S)
quantum well laser heterostructures”
Superlattices and Microstructures 15, 65-68 (1994)
48
N.N. Ledentsov, M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Böhrer,
F. Heinrichsdorff, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele,
J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, M.V. Maximov, P.S. Kop’ev and Zh.I. Alferov
“Luminescence and structural properties of (In,Ga)As - GaAs quantum dots”
Proceedings of the 22nd International Conference on the Physics of Semiconductors,
Vancouver, Canada, August 15-19,1994, Ed. D.J. Lockwood (World Scientific, Singapore,
1995), p.1855, vol.3
47
P.D. Wang, N.N. Ledentsov, C.M. Sotomayor Torres, P.S. Kop’ev, A.Yu. Egorov, V.M.
Ustinov, A.Pakhomov and I.N. Yassievich
“Magneto-luminescence in InAs monolayers grown in a GaAs matrix on (100) and high
index surfaces”
Proceedings of the 22nd International Conference on the Physics of Semiconductors,
Vancouver, Canada, August 15-19, 1994, Ed. D.J. Lockwood (World Scientific, Singapore,
1995), p.1265, vol.2
46
N.N. Ledentsov, J. Böhrer, M. Beer, M. Grundmann, F. Heinrichsdorff, D. Bimberg, S.V.
Ivanov, B.Ya. Meltser, I.N. Yassievich, N.N. Faleev, P.S. Kop’ev and Zh.I. Alferov
“Type II heterostructures based on GaSb sheets in a GaAs matrix”
Proceedings of the 22nd International Conference on the Physics of Semiconductors,
Vancouver, Canada, August 15-19, 1994, Ed. D.J. Lockwood (World Scientific, Singapore,
1995), p.1617, vol.2
1993
45
R. Nötzel, N.N. Ledentsov, and K. Ploog
“Confined excitons in corrugated GaAs/AlAs superlattices”
Phys.Rev. B47, 1299-1304 (1993)
44
M.V. Belousov, V.Yu. Davydov, I.E. Kozin, P.S. Kop’ev and N.N. Ledentsov
“Raman scattering by LA- and TA-phonons in GaAs-AlAs superlattices grown along the
[111], [112] and [113] directions”
Pis’ma v Z. Exp. i Teor. Fiz. , 57, 112-115, (1993) (JETP letters, 57, 120-124 (1993))
43
S.V. Ivanov, P.S. Kop’ev, B.K. Kurinkiev, N.N.Ledentsov, B.Ya. Meltser and A.A. Rogachev
“Middle infrared (=2-5.5 µm) high quantum efficiency luminescence in GaSb/InAs II-type
multi-quantum well structures”
Workbook Sixth International Conference on Modulated Semiconductor Structures,
August 23-27, 1993, Garmisch-Partekirchen, Germany, p.1046
42
V.B. Gubanov, G.M. Gur’yanov, N.N. Ledentsov, V.N. Petrov, Yu.B. Samsonenko, G.E.
Tsyrlin
“Optical Properties GaAs/AlGaAs quantum well heterostructures grown by molecular
beam epitaxy on vicinal GaAs (100) surfaces”
44
Technical Physics Letters 19, 695-696 (1993)
41
V.P. Kochereshko, E.L. Ivchenko, A.V. Kavokin, P.S. Kop’ev and N.N. Ledentsov
“Exciton resonance reflectivity study of quantum well wires”
Journal de Physique IV, Colloque C5, Suppl. au J. de Physique II, 3, 363-366 (1993).
40
P.S. Kop'ev and N.N. Ledetsov
“New Types of Laterally Quantized Heterostructures on Faceted Surfaces”.
Abstracts of Invited Lectures and Contributed Papers, the International Symposium
“Nanostructures: Physics and Technology”. St. Petersburg, Russia, June 13-18, 1993. Ed.
P.S.Kop'ev. pp. 26-29.
39
V.A.Shchukin, A.I.Borovkov, N.N.Ledentsov, and P.S.Kop’ev.
“Theory of GaAs/AlAs-quantum wire formation on corrugated surfaces.”
Abstracts of Invited Lectures and Contributed Papers, the International Symposium
“Nanostructures: Physics and Technology”. St. Petersburg, Russia, June 13-18, 1993. Ed.
P.S.Kop'ev. pp.102-103.
1992
38
R. Nötzel, L. Däweritz, N.N. Ledentsov and K. Ploog
“Electronic properties of semiconductor quantum wire structures grown on (311) surface”
Surf.Sci. 267, 209-213 (1992)
37
R. Nötzel, N.N. Ledentsov, L. Däweritz, K. Ploog and M. Hohenstein
“Semiconductor quantum wire structures directly grown on high-index surfaces”
Phys.Rev. B 45, 3507-3515 (1992)
36
R. Nötzel, L. Däweritz, N.N. Ledentsov and K. Ploog
“Size quantization by faceting in (110)-oriented GaAs/AlAs heterostructures”
Appl.Phys.Lett. 60, 1615-1617(1992)
35
Zh.I. Alferov, A.Yu. Egorov, A.E. Zhukov, S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, B.Ya.
Meltser and V.M. Ustinov
“Growth of GaAs-AlAs quantum-size clusters on non-(100)-oriented faceted surfaces using
molecular beam epitaxy”
Fizika i Tekn.Poluprovodn. 26, 1715-1722 (1992) (Semiconductors)
34
N.N. Ledentsov, R. Nötzel, P.S. Kop’ev and K. Ploog
“Barrier-disorder induced exciton relaxation via LO-phonons in
GaAs/AlXGa1-XAs multiple quantum wells”
Appl. Phys. A 55, 533-536 (1992)
33
N.N. Ledentsov, N. Tsukada and K. Ploog
“Intrinsic luminescence in GaAs/AlAs ultrathin-layer superlattice”
Materials Letters 14, 162-167 (1992)
32
E.L. Ivchenko, A.V. Kavokin, V.P. Kochereshko, P.S. Kop’ev and N.N. Ledentsov
“Exciton resonance reflection from quantum well, quantum wire and quantum dot
structures”
Superlattices and Microstructures, 12, 317-320 (1992)
31
N.N. Ledentsov, N. Tsukada and K. Ploog
“Carbon acceptor luminescence in type-I GaAs-AlAs ultrathin layer superlattices”
Appl.Phys.A 54, 261-265 (1992)
1991
30
S.V. Ivanov, P.S. Kop’ev and N.N. Ledentsov
45
“Interplay of berillium segregation and diffusion in heavily doped GaAs and AlGaAs grown
by molecular beam epitaxy (thermodynamic analysis)”
J. Cryst. Growth 108, 661-669 (1991)
29
S.V. Ivanov, P.S. Kop’ev and N.N. Ledentsov
“Thermodynamic analysis of segregation effects in molecular beam epitaxy of AIIIBV
compounds”
J. Cryst. Growth 111, 151-161 (1991)
28
S.V. Ivanov, P.S. Kop’ev and N.N. Ledentsov
“Influence of growth parameters on the morphology of MBE grown GaAs and AlGaAs
layers”
Mat. Sci. Forum 69, 9-12 (1991)
27
P.S. Kop’ev, A.A. Budza, S.V. Ivanov, N.N. Ledentsov, B.Ya. Meltser, M.Yu. Nadtochii, and
V.M. Ustinov
„The advantages of selectively delta-doped III-V heterostructures for HEMT applications”
Mat. Sci. Forum 69, 67-74 (1991)
26
S.V. Ivanov, P.S. Kop’ev, V.I. Korol’kov, N.N. Ledentsov, M.E. Lutsenko, B.Ya. Meltser, T.S.
Tabarov, and S.V. Shaposhnikov
„Optical switching of double-barrier resonant tunnelling AlGaAs/GaAs diode”
Mat.Sci.Forum 69, 13-16 (1991)
25
A.M. Vasiliev, A.A. Dzamashvili, S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, B.Ya. Meltser
and V.M. Ustinov
“III-V heterostructure lasers with short-period superlattice recombination region”
Mat. Sci. Forum 69, 75-80 (1991)
24
A.Yu. Egorov, P.S. Kop’ev, N.N. Ledentsov, M.V. Maksimov, V.V. Mamutin
„Yb-Ba-Cu-O growth using a BaO molecular beam”
Soviet Physics - Technical Physics 36, 907-912 (1991)
23
Y.-H. Zhang, N.N. Ledentsov and K. Ploog
“Manganese-related luminescence in GaInAs/AlInAs multiple quantum wells grown on InP
by molecular beam epitaxy”
Appl.Phys. A 53, 437-441 (1991)
22
Y.-H. Zhang, N.N. Ledentsov, and K. Ploog
“Effect of hole localization mechanism on photoluminescence spectra of two-dimensional
electron-gas systems”
Phys.Rev. B44, 1399-1402 (1991)
21
R. Nötzel, N.N. Ledentsov, L. Däweritz, M. Hohenstein and K. Ploog
„Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces”
Phys.Rev.Lett. 67, 3812-3815(1991)
1990
20
S.V. Ivanov, P.S. Kop’ev and N.N. Ledentsov
“Thermodynamic analysis of segregation effects in molecular beam epitaxy”
J. Cryst. Growth 104, 345-354 (1990)
19
S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, B.Ya. Meltser, V.M. Ustinov and A.M. Vasiliev
“Ultrathin layers and short period superlattices in semiconductor structures”
phys. stat. sol.(a) 118, 169-176 (1990)
18
Zh.I. Alferov, S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, M.E. Lutsenko, M.I. Nemenov, B.Ya.
Meltser, V.M. Ustinov and S.V. Shaposhnikov
46
“Spreading and surface recombination in quantum well (Al,Ga)As double heterostructure
separate confinement lasers with a broad stripe”
Fizika i Tekn. Poluprovodn. 24, 152-158 (1990) (Sov. Phys. Semicond. 24, 92-95 (1990))
17
Zh.I. Alferov, S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, B.Ya. Meltser and M.E. Lutsenko
“(Al,Ga)As SCH lasers emitting at 0.8 µm (175 A.cm-2) and 0.73 µm
(350Acm-2) and characterized by a doped quantum well”
Fizika i Tekn. Poluprovodn. 24, 201-203 (1990) (Sov. Phys. Semicond. 24, 122-123 (1990))
16
Zh.I. Alferov, S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, B.Ya. Meltser and S.V.
Shaposhnikov
“(In,Ga)As SCH lasers emitting at 1.1µm with a strained (In,Ga)As quantum well, confined
by a short period superlattice”
Fizika i Tekn. Poluprovodn. 24, 359-361 (1990) (Sov. Phys. Semicond. 24, 221-222)
15
P.S. Kop’ev and N.N. Ledentsov
“Giant diffusion lengths of nonequilibrium carriers in quantum well heterostructures”
Fizika i Tekn. Poluprovodn. 24, 1691-1693 (1990) (Sov.Phys.Semicond. 24, 1058-1059(1990))
14
Zh.I. Alferov, V.V. Zhuravleva, S.V. Ivanov, P.S. Kop’ev, V.I. Korol’kov, N.N. Ledentsov,
B.Ya. Meltser and T.S. Tabarov
“Electrical and optical effects in GaAs-(Al,Ga)As double-barrier resonant tunnelling
heterostructures”
Fizika i Tekn. Poluprovodn. 24, 361-364 (1990) (Sov.Phys.Semicond. 24, 222-224 (1990))
13
P.S. Kop’ev, S.V. Ivanov, N.N. Ledentsov, B.Ya. Meltser, M.Yu. Nadtochii, and V.M. Ustinov
“Growth by molecular beam epitaxy of GaSb/InAs/GaSb heterostructures with a high
mobility of two-dimensional electrons”
Fizika i Tekn. Poluprovodn. 24, 717-719(1990) (Sov.Phys.Semicond. 24, 450-451 (1990))
12
A.V. Bobyl, P.S. Kop’ev, N.N. Ledentsov, A.M. Mintairov and V.M. Ustinov
“Decay of photo-induced electron-hole-plasma in single selectively-doped
heterostructure”
Pis’ma v Z. Tekn. Fiz. 16, 90-95 (1990) (Sov. Techn. Phys. Lett.)
1989
11
P.S. Kop’ev, S.V. Ivanov, N.N. Ledentsov, B.Ya. Meltser, M.Yu. Nadtochii, and V.M. Ustinov
„The influence of unintentional impurities on characteristics of two dimensional electron
gas at GaAs/AlGaAs heterojunction”
Crystal Properties and Prepapation. 19-20, 63-66 (1989)
1988
10
P.S. Kop’ev, N.N. Ledentsov
„Molecular beam epitaxy of heterostructures based on A3B5 compounds” (review)
Fizika i Tekn.Poluprovodn. 22, 1728-1742 (1988) (Sov. Phys. Semicond. 22, 1093-1101
(1988))
9
Zh.I. Alferov, A.M. Vasiliev, S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, B.Ya. Meltser and
V.M. Ustinov
“Reduction of the threshold current density (52 A.cm-2, 300K) in SCH GaAs-AlGaAs lasers
by using a quantum well confined by a variable-step short-period superlattice”
Pis’ma v Z.Tekn.Fiz. 14, 1803-1807 (1988) (Sov. Techn. Phys. Lett.)
1986
8
P.S. Kop’ev, N.N. Ledentsov, B.Ya. Meltser, I.N. Uraltsev and D.R. Yakovlev
47
“Exciton photoluminescence probe of interface quality in multiple quantum well
structures”
Proc.18th Int. Conf. on the Phys. Semicond., Stockholm, 1986, v.2, 219-222
7
A.M. Vasiliev, P.S. Kop’ev, V.P. Kochereshko, N.N. Ledentsov, B.Ya. Meltser, V.M. Ustinov,
I.N. Uraltsev and D.R. Yakovlev
“Characteristic luminescence of single abrupt GaAs-AlGaAs heterojunction”
Fizika i Tekn. Poluprovodn. 20, 353-356 (1986) (Sov. Phys. Semicond. 20, 220-221 (1986))
6
Zh.I. Alferov, R.O. Dzaparidze, S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, B.Ya. Meltser and
V.M. Ustinov
“Heterostructure lasers with an active region confined by short-period superlattice”
Pis’ma v Z.Tekn.Fiz. 12, 562-565 (1986) (Sov. Techn. Phys. Lett.)
1985
5
N.N. Ledentsov, B.Ya. Ber, P.S. Kopév, S.V. Ivanov, B.Ya. Meltser and V.M. Ustinov
“Influence of growth conditions on unintentional impurity incorporation in doped GaAs
layers grown by MBE”
Z. Tekn. Fiz. 55, 142-147 (1985) (Sov. Phys: Techn. Phys. 30, 80-83 (1985))
4
A.M. Vasiliev, N.N. Ledentsov, P.S. Kop’ev, B.Ya. Meltser, I.N. Uraltsev and D.R. Yakovlev
“Quasi-two-dimensional and delocalized excitons in quantum well structures”
Pis’ma v Z.Exp. i Teor. Fiz. 41, 343-345 (1985) (JETP letters 41, 420-423 (1985))
3
Zh.I. Alferov, P.S. Kop’ev, N.N. Ledentsov, B.Ya. Meltser, I.N. Uraltsev and D.R. Yakovlev
“Intrinsic and extrinsic luminescence in GaAs-AlGaAs quantum well structures”
Fizika i Tekn. Poluprovodn. 19, 715-721 (1985) (Sov.Phys.Semicond. 19, 439-443 (1985))
2
B.Ya. Ber, S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, B.Ya. Meltser, I.N. Uraltsev and D.R.
Yakovlev
“Photoluminescence of GaAs-AlGaAs quantum wells grown by molecular beam epitaxy”
Izvestia AN SSSR, Ser. Fizicheskaya 49, 1905-1908 (1985)
1
P.S. Kop’ev, B.Ya. Ber, S.V. Ivanov, N.N. Ledentsov, B.Ya. Meltser and V.M. Ustinov
„Influence of growth conditions on unintentional impurity incorporation in undoped
epitaxial GaAs layers grown by MBE”
Fizika i Tekn.Poluprovodn. 18, 270-274 (1984) (Sov. Phys. Semicond. 18, 167-169 (1984))
48
B. List of recent invited talks on Quantum Dots (first author talks only)
1995
1. N.N. Ledentsov
“Ordered arrays of quantum dots: formation, electronic spectra, relaxation phenomena,
lasing” (invited).
7th International Conference on Modulated Semiconductor Structures MSS7, Madrid, 10-14
July 1995
2. N.N. Ledentsov
“3D Ordered Arrays of Semiconductor Quantum Dots” (invited).
Autumn Session of the Physics and Astronomy Branch of the Russian Academy of
Sciences, Moscow, November 1995
1996
3. N.N. Ledentsov
“Ordered Arrays of Quantum Dots” (plenary)
23rd International Conference on the Physics of Semiconductors, Berlin, July 21-26, 1996
4. N.N. Ledentsov
“Quantum Dots and Quantum Dot Lasers” (invited contribution on the occation of
nomination of the Young Scientist Award).
23rd International Symposium on Compound Semiconductors, St. Petersburg, Russia, 2326 September, 1996
5. N.N. Ledentsov
“Injection Lasers with 3D Ordered Arrays of Quantum Dots” (invited).
International Workshop on Growth, characterization and exploitation of epitaxial
compound semiconductors on novel index surfaces (NIS’96), Lyon (France) 7-9 Oct. 1996
1997
6. N.N. Ledentsov
“Growth and characterization of InAs quantum dots” (invited).
8th International Conference on Narrow Gap Semiconductors, Shanghai, April 20-24, 1997
7. N.N. Ledentsov
“Self-organized quantum wires and dots: new challenge for device applications”
(invited).
8th International Workshop on Metal-Organic Chemical Vapor Deposition, Berlin, June 811, 1997
8. N.N. Ledentsov
“Submonolayer insertions in Wide Bandgap Matrices: New Principles for Optoelectronics”
(invited).
Annual International Symposium „Nanostructures: Physics and Technology“, St.
Petersburg, June 23-27 1997.
9. N.N. Ledentsov
“Quantum islands by submonolayer insertions in wide bandgap matrices: new concepts
for optoelectronics” (invited).
International Workshop on Quantum Wells, Dots, Wires and Self-Organized
Nanostructures, Triest, August, 11-22, 1997
49
10. N.N. Ledentsov
“Vertically coupled InGaAs-AlGaAs quantum dots: growth, characterization, high power
lasers” (invited).
International Workshop on Quantum Wells, Dots, Wires and Self-Organized
Nanostructures, Triest, August, 11-22, 1997
11. N.N. Ledentsov
“Excitonic Waveguiding and Lasing in Wide Bandgap Semiconductors“ (invited).
International Conference Optics of Excitons in Condensed Matter dedicated to the 100th
anniversary of Professor E. F. Gross, St. Petersburg, September 14-18, 1997
12. N.N. Ledentsov
“Self-Organized Quantum Dots” (plenary).
Annual Meeting of the Institute of Physics (IoP). Condensed Matter and Materials Physics.
Univ. of Exeter, Dec. 1997.
1998
13. N.N. Ledentsov
“Quantum Dot Lasers – Experimental Results and Future Trends” (invited).
Advanced NATO Research Workshop "Future Trends of Microelectronics: Off the Beaten
Path" and a Submeeting - DoD Sponsored Symposium on "Defense Technologies in 21st
Century”, Ile des Embiez, France, May 31 - June 5, 1998,
14. N.N. Ledentsov
“Quantum Dot Lasers - The Birth and Future Trends” (invited)
International Conference Physics at the Turn of the 21st Century, St Petersburg, September
28 - October 2, 1998.
1999
15. N.N. Ledentsov
“Quantum Dots by Ultrathin Insertions in Wide-Gap Matrices” (invited).
3rd International Workshop on MOLECULAR BEAM EPITAXY: GROWTH PHYSICS and
TECHNOLOGY May 23-28, 1999, Warsaw, Poland
16. N.N. Ledentsov
“Quantum Dot Vertical Cavity Surface Emitting Lasers” (invited).
IEEE/LEOS Summer Topical Meeting, Workshop on Nanostructures and Quantum Dots, 2627 July 1999, San Diego, CA, USA
17. N.N. Ledentsov
“Quantum Dots” (invited)
Meeting of the Presidium of the Russian Academy of Sciences, Moscow, December 14th,
1999.
2000
18. N.N. Ledentsov (presenting author)
D.Bimberg and N.N. Ledentsov
“Quantum Dot Lasers: From Promise to Reality”(invited).
“Photonics West”, 22-28 January 2000. SPIE International Symposium on Integrated
Optoelectronic Devices.
19. N.N. Ledentsov
“Quantum Dot Lasers: The Promises Come to Reality” (invited).
The Third SANKEN International Symposium “Advanced Nanoelectronics: Devices,
Materials, and Computing” March 14-15, 2000, Osaka University.
20. N.N. Ledentsov (presenting author)
50
N. N. Ledentsov, D. Bimberg
“Progress in Q-Dot Lasers” (invited)
“Optical Amplifiers and Their Applications and Integrated Photonics Research Topical
Meetings Meetings and Tabletop Exhibit” of the Optical Society of America, 9-15 July 2000,
Hilton Quebec, Canada.
21. N.N. Ledentsov
“Self-Organization Effects in Crystal Growth: Nanoepitaxy, Nanostructures, Defect
Engineering” (plenary)
IX National Conference on Crystal Growth (NCCG-2000) Moscow, 16-20, October, 2000.
2001
22. N.N. Ledentsov, D. Bimberg, V.M. Ustinov and Zh.I.Alferov
“High Power Longwavelength Lasers using GaAs-based Quantum Dots” (invited).
Photonics West 2001. SPIE "In-Plane Semiconductor Lasers V Conference" 20-26 Jan.
2001, San Jose, CA.
23. N.N. Ledentsov
"Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics"
(plenary).
International Conference on Indium Phosphide and Related Materials (IPRM-01) 14-18 May
2001 Nara New Public Hall, Nara, Japan
24. N.N. Ledentsov
“Long-wavelength quantum dot lasers: from promising to unbeatable” (invited)
Future Trends in Microelectronics: the Nano Millenium, June 25-29, 2001: Ile de Bendor,
France
25. N.N. Ledentsov
“1.3 µm quantum dots for VCSEL applications” (invited)
10th International Conference on Modulated Semiconductor Structures
(MSS10), 23-27 July 2001, Austria
26. N.N. Ledentsov
“Growth of Self-Organized Quantum Dots for Optoelectronics Applications: Nanoepitaxy,
Nanostructures, Defect Engineering” (invited)
XIII International Conference on Crystal Growth, Kyoto, Japan, July 30-August 4, 2001.
27. N.N. Ledentsov
“Quantum Dot Semiconductor Laser”
Commerative International Symposium for the 40th Anniversary for the founding of Osaka
Electro-Communication University, 4th November 2001, Osaka, Japan
2002
28. N.N.Ledentsov
“Quantum wires and quantum dots on corrugated (311) surfaces: potential applications in
optoelectronics” (Invited talk),
Photonics West, January 21-25 2002, Symposium on Quantum Dot Devices and
Computing, paper [4656-08], Conference 4656, San Jose, CA.
29. N.N. Ledentsov
“Oberflächenemittirende Quantenpunktlasern: Wie weit kommt Man ins IR?” (invited talk)
Kongress NanoDE Innovationen durch Nanotechnologie, Internationales Kongresszentrum
Bundeshaus Bonn, May 6-7, 2002.
30. N.N. Ledentsov
51
“Self-Organized Semiconductor Nanostructures: Working Together with Nature”(opening
plenary talk)
Fifth ISTC Scientific Advisory Committee Seminar “Nanotechnologies in the area of
physics, chemistry and biotechnology” St Petersburg, Russia 27-29 May, 2002
31. N.N. Ledentsov
“Quantum dot lasers: from promising to unbeatable”
Berliner Physikalisches Kolloquium, June 26, 2002
32. N.N. Ledentsov
“Quantum Dot VCSELs” (invited talk)
International Workshop “Nano-Optoelectronics”, Technical University Berlin, July 11th
2002
Announced
N.N. Ledentsov
“Si-Ge Quantum Dot Laser: What Can We Learn from III-V Experience?” (invited talk).
OASIS Advanced Research Workshop „TOWARDS THE FIRST SILICON LASER”, Trento,
21-26 September 2002, Conference Centre Panorama in Sardagna (TN).
N.N. Ledentsov
“New Approaches to Semiconductor Lasers“ (invited talk)
Asia Pacific Optical and Wireless Communications Conference, Shanghai, China, 14-18
October 2002 (Photonics Asia).
N.N. Ledentsov
“1.3 micron QD VCSELs” (invited talk)
SPIE Photonics Fabrication Europe Symposium, Brugge (Belgium), 28 October - 1
November 2002.
N.N. Ledentsov
“Quantum Dots for Lasers” (plenary talk)
International Electron Devices and Materials Symposia (2002 IEDMS), December 20-21,
2002, National Taiwan University, Taipei, Taiwan, R.O.C.
N.N. Ledentsov
“Recent advances in long wavelength GaAs-based QD lasers” (invited talk)
Photonics West 2003, 25-31 January 2003, San Jose Convention Center, San Jose, CA USA
52