The properties of AZO/Cu/AZO films deposited by sputtering and

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The properties of AZO/Cu/AZO films deposited by
sputtering and post hydrogen plasma treatment at low
temperature
Cheng-Yi Lin* Tien-Chai Lin**
Department of Electrical Engineering
Kun Shan University
Abstract
In this study, we used RF magnetron sputtering to grow
AZO/Cu/AZO tri-layer films on plastic and glass substrates. The films
were processesd by changing Cu thickness to get appropriate properties
of films. After deposition, the sample were treated in hydrogen plasma in
order to improve the films properties such as transmittance and resistivity.
According to the experiment results, the tri-layer AZO/Cu/AZO
structure have an underlayer of AZO which enhance to grow high quality
Cu interlayer.The high gualily Cu interlayer will produce high
intensity(002)AZO growth. The thickness of AZO and Cu films slightly
affect films surface roughness and transmittance. The best properties of
films with sheet resistance of 439Ω/sq, on glass 900Ω/sq on PC and
876Ω/sq on PET were obtained. The average transmittance on glass is
86%. The process condition was carried out at AZO power of 130W,
deposition time of 13min, Cu power of 40W and deposition time of
100sec.
In hydrogen plasma treatment, we used RF power as plasma source
and changing treatment time. The films properties were improve by
increasing treatment time, therefore the sheet resistance was reduce from
77kΩ/sq to 3.55kΩ/sq, and the average transmittance increase from 81%
to 91%.
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