Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 125-132.
PACS: 78.47.+p, 78.55.A, 78.67.Bf
Photoluminescent films of nanocrystalline
silicon doped with metals
E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko,
S.V. Svechnikov, E.F. Venger, I.R. Bazylyuk
Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Abstract. Effects of electropositive (Au, Ag, Cu) and electronegative (Al, In)
metal impurities are investigated from the viewpoint of photoluminescent and
electronic properties of nanocrystalline silicon films prepared by laser ablation
when depositing them onto a silicon substrate. Measured are time-resolved
photoluminescence spectra and temperature dependences of the capacitance
photovoltage. It was ascertained that only Au could essentially increase intensity
and stability of photoluminescence, increase its relaxation time by three orders of
magnitude as well as decrease the density of states near the film-substrate
boundary. It has been shown that the metal impurities provide an essential effect on
photovoltage arising in films of nanocrystalline Si as well as the capture of nonequilibrium electrons by traps both in films themselves and at the substrate
boundary.
Keywords: nanocrystalline silicon films, photoluminescence,
photovoltage, metal doping, boundary electron states, electron traps.
capacitance
Paper received 08.04.02; revised manuscript received 03.06.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 133-137.
PACS: 66.30.Jt, 66.30.Qa, 61.72.Vv, 61.72.Ff, 61.72.Yx
Defects and radiation-enhanced defect reactions
in ZnSe/(001)GaAs MBE layers
G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska,
M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev1)
Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine,
Phone: (044) 265-96-45; fax: (044) 265-83-44; e-mail: bork@lumin.semicond.kiev.ua
1)
P.N. Lebedev Physical Institute RAS, 117927 Moscow, Russia
Abstract. Optical and structural properties of undoped ZnSe epilayers with
thickness ranging from 0.5 to 2 m grown by molecular beam epitaxy on GaAs
(001) substrates have been investigated by depth resolved optical and X-ray
methods. It was found that the epilayers with thicknesses above some value (>1
m) contain three regions of different structural and optical quality. It is shown that
two of these regions (near top surface and near interface ones) contain higher
defect density. The nature of luminescence line at 446.1nm (4.2 K) is discussed. It
was found that the radiation enhanced defect reactions occurred in the top surface
region of epilayer.
Keywords: MBE, ZnSe, photoluminescence, degradation.
Paper received 07.05.02; revised manuscript received 03.06.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 138-141.
PACS: 61.72.V, 61.80.-x, 79.60.-i
Influence of ion implantation and annealing on
composition and structure of GaAs surface
M.T. Normuradov1), B.E. Umirzakov2), D.A. Tashmukhamedova2), A.K. Tashatov1)
1)
Karshin Engineer-and-economics
Tashkent State Technical University
E-mail: ftmet@rambler.ru
2)
Abstract. In this work investigated is the influence of barium ion implantation and
subsequent annealing on composition, electronic and crystalline structure of GaAs
surface. For the first time, the influence of low energy Ba + ions implantation on the
structure of GaAs surface was investigated using photoelectron spectroscopy.
Determined are parameters of energy bands and the crystalline lattice of the threecomponent system Ga0.6Ba0.4As. The width of the forbidden gap is Eg = 1 eV, the
lattice constant is a = 5.73 Е.
Keywords: ion-implantation, photoelectron spectroscopy, post-implantation
annealing.
Paper received 29.03.01; revised manuscript received 03.06.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 142-151.
PACS: 77.80.-e
The influence of depolarization field on
dielectric and pyroelectric properties of
ferroelectric films
M.D. Glinchuk, E.A. Eliseev, V.A. Stephanovich1)
Institute for Problems of Materials Science, NAS of Ukraine, Krjijanovskogo 3, 03142 Kiev, Ukraine
Phone: +380 (44) 444-2131; e-mail glin@materials.kiev.ua
1)
Institute of Mathematics, Opole University, 45-052 Opole, Poland
Abstract. Calculations of the spontaneous polarization (Ps), dielectric
susceptibility () and pyroelectric coefficient () of the ferroelectric films have
been performed in the thermodynamic phenomenological theory framework. The
Euler-Lagrange equation determining polarization dependence on the film
parameters and the external electric field was solved analytically under the
boundary conditions with different extrapolation lengths at two surfaces,
respectively. The depolarization field contribution was taken into account in the
model of short-circuited mono-domain ferroelectric film, treated as perfect
insulator. The detailed analysis of the aforementioned quantities, space distribution
and their average values in two cases with and without depolarization field was
carried out. It was shown that the depolarization field shifts critical temperature to
smaller values and the critical thickness to bigger value in comparison to those
obtained without accounting the depolarization field. Meanwhile average values of
Ps,  and  dependences on the film parameters and temperature are similar to the
corresponding dependences obtained without accounting the depolarization field.
The depolarization field was shown to flatten Ps,  and  space distributions,
which have the peculiarities otherwise (e.g. small maxima in  and  coordinate
profiles near the film surfaces). It was shown that depolarization field influence in
short-circuited film could be neglected when the film thickness or the extrapolation
lengths in the boundary conditions are larger than the correlation length value.
Keywords: depolarization field, ferroelectric film, «size-driven» phase transition
Paper received 14.03.02; revised manuscript received 30.05.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 152-155.
PACS: 77.84.B
Mechanism of 6H-3C transformation in SiC
S.I. Vlaskina
Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kiev, Ukraine
Phone: +380(44) 269 3792; fax +380(44) 265 8342; e-mail:businkaa@mail.ru
Dong Seoul College, 461-714, 423,
Bokjung-Dong, Sungnam- city, Kyonggi-do, Korea
Phone: 82(031)7202141; fax 82(0342)7202261; e-mail:svitlana@haksan.dsc.ac.kr
Abstract. Heavily doped by nitrogen single crystals of 6H-SiC were completely
transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1
hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation
have been studied. Calculated nitrogen concentration from the Hall effect and EPR
spectra for transformed crystals show its decreasing value in 3C-SiC. Data show
appearance of new defects – donors and acceptors – that make nitrogen optically
and electrically non-active. These defects accompany the process of
transformation.
Keywords: silicon carbide, phase transformation.
Paper received 11.02.02; revised manuscript received 28.05.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 156-162.
PACS: 71.35.Cc, 78.40.Fy, S8.12
Light absorption by excited exciton states
in layered InSe crystals
Yu. I. Zhirko, I.P. Zharkov
Institute of Physics, NAS of Ukraine, 46 prospect Nauky, 03037 Kyiv, Ukraine
Abstract. We investigated spectra of light absorption by excitons in InSe crystals
of different thicknesses, both pure and doped with iron group impurities, at
temperatures from 4.5 up to 100 К. It was shown that, along with the traditional
direct optical transition (photon  exciton  photon) at k = 0, exciton production
and annihilation (accompanied with photon emission) occurs also via indirect
vertical transition (photon ± phonon  exciton  photon ± phonon) at k  0. For
the n = 1 exciton state the direct and indirect vertical transitions were found to be
compatible. For excited exciton states these transitions are not compatible; as a
result, the integral intensity of absorption bands for excited exciton states, Kn, is
over K0/n3 (where K0 is the classic value for the n = 1 exciton absorption band) and
grows with temperature. For the n = 1 exciton state both symmetric and
asymmetric (with phonon absorption only) indirect vertical transitions are
considered.
Keywords: exciton absorption, layered crystal, InSe.
Paper received 26.02.02; revised manuscript received 08.04.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 163-169.
PACS: 78.20.Bh, 78.40
Urbach’s edge of glassy HgSe-GeSe2 alloys:
static disorder and temperature dependence of
optical absorption
V.V. Bozhko1), V.V. Halyan1) , O.V. Parasyuk2)
1)
Department of Solid State Physics, Volyn State University, 13 prospect Voli, 43009 Lutsk, Ukraine
E-mail: galyan@lab.univer.lutsk.ua
2)
Department of Inorganic and Physical Chemistry, Volyn State University, 13 Voli av., 43009 Lutsk, Ukraine
Abstract. Results of investigations of spectral characteristics in the fundamental
absorption range for the glass-like alloys HgSe – GeSe2 are represented. To explain
the phenomenon of anomaly growth of the static disorder, the model of deforming
tensions is discussed. The hypothesis concerning a sharp change of physical-andchemical properties for the transition over the double eutectic point on the stable
phase diagram of the HgSe – GeSe2 system with a changing glass-creating matrix
is suggested.
Keywords: fundamental absorption, static disorder, glass-creating matrix.
Paper received 06.03.02; revised manuscript received 17.05.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 170-175.
PACS: 72.20.D, 84.60.J, 61.72.Dd, 61.72.Mm, 68.35.Bs
Recrystallization processes in screen-printed
CdS films
V.P. Klad’ko, O.S. Lytvyn, P.M. Lytvyn, N.M. Osipenok, G.S. Pekar,
I.V. Prokopenko, A.F. Singaevsky, A.A. Korchevoy
Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine.
Phone: +380 (44) 265 5940; e-mail: plyt@isp.kiev.ua,
Abstract. Kinetics of recrystallization in screen-printed polycrystalline CdS films
has been investigated by X-ray structure analysis and optical microscopy. The
relation between the crystallite size, crystallite orientation and the macrostrain, as
well as their dependence on heat treatment regimes is established. It is shown that
single-phase CdS films having a thickness of some tens microns, large grain size
and low residual strain can be produced at optimum technological regimes. The
films obtained are suitable for fabrication of CdS/CdTe solar cells.
Keywords: CdS film, screen printing, structural perfection, recrystallization, solar
cell
Paper received 17.05.02; revised manuscript received 03.06.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 176-179.
PACS: 72.40, 74.40
Photoelectric properties of nGa2O3-pGaSepInSe cascade heterostructures
V.P. Savchyn, J.M. Stakhira, Ya.M. Fiyala, V.B. Furtak
Ivan Franko National University of Lviv, 50 Dragomanov Str., 79005 Lviv, Ukraine,
e-mail: savchyn@wups.lviv.ua
Abstract. Cascade heterostructure of nGa2O3-pGaSe-pInSe was created, and a
corresponding band energy diagram was built. Electrical and photoelectric
properties of this structure were investigated. Due to isotype pGaSe-pInSe
heterojunction the photosensitivity spectrum of nGa2O3-pGaSe-pInSe
heterostructure extends up to 1.2 eV in IR range as referred to the photosensitivity
spectrum of anisotype nGa2O3-pGaSe heterojunction.
Keywords: heterostructure, heterojunction, photosensitivity, indium selenide,
gallium selenide, gallium oxide.
Paper received 14.03.02; revised manuscript received 24.05.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 180-182.
PACS: 73.40.K, 73.40.C
Optimization of technological parameters of
ohmic contact junctions for GaAs-AlGaAsbased transistor structures
R.V. Konakova, V.V. Milenin, M.A. Stovpovoi
Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone.: +380 (44) 265-6182; fax: +380 (44) 265-8342; e-mail: konakova@isp.kiev.ua
Abstract. The work deals with study and optimization of the technological
parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front
penetration into semiconductor is the main factor that determines ohmic properties
of contact junctions.
Keywords: ohmic contact, contact resistance, GaAs-AlGaAs heterostructure.
Paper received 13.03.02; revised manuscript received 20.05.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 183-187.
PACS: 68.65.A
Properties of SiO2-GaAs and Au-Ti-SiO2-GaAs
structures used in production of transmission
lines
N.S. Boltovets1), G.N. Kashin2), R.V. Konakova2), V.G. Lyapin2), V.V. Milenin2),
E.A. Soloviev2)
State Scientific & Research Institute “Orion”, 8a Eugene Pottier St., 03057 Kiev, Ukraine
E-mail: bms@i.kiev.ua
2)
Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kiev, Ukraine
Phone.: +(380) 44 265-61-82; fax: +(380) 44 265-83-42; e-mail: konakova@isp.kiev.ua
1)
Abstract. We investigated electrophysical properties of the SiO2-GaAs and Au-TiSiO2-GaAs structures that are used in technological process when manufacturing
transmission lines for microwave integrated circuits. The SiO2-GaAs structures
were formed using different techniques, namely, (i) monosilane oxidation in
oxygen, (ii) high-temperature tetraethoxysilane decomposition, (iii) high-frequency
cathode sputtering of quartz in argon plasma, and (iv) electron-beam evaporation of
quartz in a vacuum. The SiO2 films obtained using monosilane oxidation or
electron-beam evaporation of quartz demonstrated better properties. For the Au-TiSiO2-GaAs structures a layer structure transformation was shown to occur, with
formation of TiOx-SiO2 junction and gold atoms penetration over the whole
adhesion layer thickness. The microwave oscillator modules made using the Au-TiSiO2-GaAs (Si) structures demonstrated output power of 10-60 mW in the 8 mm
wavelength range.
Keywords: microwave diode, oscillator module, interface between phases,
SiO2GaAs layer structure, AuTiSiO2GaAs multilayer structure.
Paper received 13.03.02; revised manuscript received 24.05.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 188-192.
The effect of doping methods on electrical
properties and micromorphology of polysilicon
gate electrode in submicron CMOS devices
I. Ahmad1), A. Omar2), A. Mikdad 1)
1)
Dept. of Electrical, Electronic and Systems Engineering, Faculty of Engineering, 43600 University Kebangsaan Malaysia,
Malaysia
Phone: 6-03-89296309; fax: 6-03-89296146; e-mail: ibrahim@vlsi.eng.ukm.my, anuar@vlsi.eng.ukm.my,
2)
MIMOS Semiconductor (M) Sdn Bhd, MIMOS Berhad, Technology Park Malaysia Kuala Lumpur, Malaysia
Phone: 6-03-89965000; fax: 6-03-89960387; e-mail: abdullah@mimos.my
Abstract. Two doping methods for introducing phosphorus atoms into polysilicon
to form a gate electrode for 0.5 m CMOS were investigated. These methods were
ion implantation and the ”in-situ” one (it is also known as thermal diffusion). For
the in-situ method, the concentration of 1.81020cm–3 for Si2H6 and phosphane
(PH3) were used, in the course of ion implantation applying two different doses:
2.01016 and 31016cm–2 at 40 keV. The micromorphology of the polysilicon
surface was studied using the atomic force microscopy (AFM). The polysilicon
thickness obtained via the in-situ method ranged between 12.35 and 26.08 nm, with
an average value thickness of 18.0 nm, and its sheet resistance value was 21±1
ohm/square. As for the ion implantation method, at the lower doses the thickness
ranged at about 12.00 upto 46.0 nm with an average value of 24.0 nm, and its sheet
resistance values were of 36±13 and 45±21 ohm/square, respectively. At the higher
doses, the thickness varied from 12.16 to 47.84 nm with an average meaning 23.96
nm, and its sheet resistance value was between 25 to 40 ohm/square. Therefore,
polysilicon doped by the in-situ method has smoother and thinner surface and
possesses better electrical properties.
Keywords: polysilicon gate, micromorphology, ion implantation.
Paper received 12.02.02; revised manuscript received 15.04.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 193-196.
PACS: 85.60.Bt, 42.79.Kr
Model of dynamic indication in the bar graph
form
A.V. Bushma, N.I. Sypko
Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03128 Kyiv, Ukraine
Phone: +380 (44) 265-6188; fax: +380 (44) 265-5430; e-mail: bushma@isp.kiev.ua
Abstract. The main principles of formation of dynamic bar graph representation
using display with a matrix electric connection of elements have been considered in
this work. Applying the theory of sets we formalized a synthesis of symbols and
obtained logic operators describing a formation of a visual image at the display
information area. Offered and analysed is the information model for the bar graph
form of information representation using the scale with scanning along the columns
(elder digits) of the element matrix.
Keywords: indication in bar graph form, dynamic control, display, modeling,
multielement bar graph array, array connection of elements, information area,
theory of sets, logical operator.
Paper received 08.04.02; revised manuscript received 31.05.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 197-200.
PACS: 42.62.Eh
Solid-state laser with self-stabilized
or linearly chirped output frequency
M. Lopiitchouk1), I. Peshko2)
1)
Institute of Physics, NAS of Ukraine, 03650 Kyiv, 46 prospect Nauky, Ukraine
Phone: +380 (44) 265-0862; fax: +380 (44) 265–1589; e-mail : lopii@i.com.ua
2)
Now I.P. is with Photonics Research Ontario, 60 St.George Str., Suite 331, Toronto, Ontario, M5S 1A7, Canada.
Phone: 1(416)978 -1804; fax: 1(416)978-3936; e-mail: ipeshko@pro.on.ca (office), ipeshko@sympatico.ca (home).
Abstract. The specific regimes of the linear tuning and the frequency selfstabilization were proposed and analyzed theoretically in a diode pumped solidstate laser with a thin-film metallic selector.
Keywords: diode pumped solid-state laser, single-frequency laser, frequency selfstabilization, thin-film selector.
Paper received 10.12.01; revised manuscript received 18.04.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 201-211.
PACS: 72.20.J, 78.55, 78.60
Effect of nonuniform doping profile
on thermometric performance
of diode temperature sensors
V.N. Sokolov, Yu.М. Shwarts
Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kiev, Ukraine
Abstract. A theoretical investigation of the influence of a nonuniform doping
concentration to the temperature response curve of diode temperature sensors is
presented, which is the first effort in this field important for diffused diodes used as
the temperature sensors. The current-voltage characteristic, from which the
temperature response curve can be obtained, has been calculated using the model of
a one-dimensional exponentially graded p–n junction with uniformly doped
base region and the diffusion current of the minority carriers through
the p–n junction. We show that depending on the doping gradient both
contributions to the current coming from the electron and hole current components
appear to be of the same order of magnitude. That is in contrast to the prediction of
the widely used asymmetrical step junction model. It follows from numerical
calculations that an effective shift of the temperature response curve due to
nonuniformly doped emitter region in the temperature equivalent can reach the
value of about 20 K. The limiting temperature Tm in the temperature response
curve that restricts its extent into the high temperature range has been analyzed
depending on the excitation current, the doping concentration of the base, and the
p–n junction depth.
Keywords: silicon diode structure, temperature sensor, temperature response
curve, graded junction.
Paper received 27.02.02; revised manuscript received 19.04.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 212-216.
PACS: 75.70.Ak, 75.70.Cn, 78.20.Ls
Polar magneto-optical Kerr effect studies of
interlayer exchange coupling in Fe/Tb bilayers
and Fe/Au/Tb trilayers
E.V. Shypil, A.M. Pogorilyy, Ye.O. Pogoryelov
Institute for Magnetism, NAS of Ukraine, 36-b Vernadsky blvrd., 03142 Kyiv, Ukraine
Abstract. Interlayer exchange coupling was studied. The investigations were
carried out on bilayer (Fe/Tb) and trilayer (Fe/Au/Tb) ultrathin film structures. The
films on silica substrate were prepared by electron-beam evaporation in an MBE
system with a background pressure of (1  5)  10–10 Torr and maintaining a
pressure of (1  3)  10–9 Torr during the film growth. To investigate these film
structures polar magneto-optical Kerr effect was used. In bilayers the perpendicular
magnetic anisotropy was observed. When a monolayer of Au was interposed at the
interface, was observed to disappear. This is because of breaking the short-range
interaction between Fe and Tb layers. Instead a long-range indirect exchange via
nonmagnetic Au interlayer appears. The increase of Au interlayer thickness
(3  35 Е) resulted in the oscillations of the Kerr angle. Analogous oscillations are
distinctive to the RKKY model of interlayer exchange coupling.
Keywords: polar Kerr effect, exchange interaction, single interface, interfacial
spacer, exchange coupling oscillations.
Paper received 14.03.02; revised manuscript received 29.05.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 217-221.
PACS: 78.-s; 81.15.-z
Optical and magneto-optical properties of thin
films for high density information recording
V.G. Kravets1), L.V. Poperenko2), I.V. Yurgelevich2), A. K. Petford-Long3)
1)
Institute for Information Recording, 2 Shpak St, 03113 Kyiv, Ukraine
Department of Physics, Taras Shevchenko Kyiv University, 6 Av. Acad. Glushkov, 03022 Kyiv, Ukraine
3)
Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom
2)
Abstract. It was found that optical and magneto-optical (MO) properties of thin
film materials have potential application for blue laser recording. For this purpose,
we have used a combination of ellipsometric and polar MO Kerr effect
measurements. The optical and magneto-optical properties of Mn(Sb1-xBix) and
Co-Pt nanocrystalline films were investigated for incident photons in the energy
range from 1.3 to 4.0 eV. A large Kerr rotation angle of about 0.57 0 was observed
at photon energy 2.65 eV for the Mn55Sb36Bi9 film with an average grain size
of 30 nm. The changes of the exchange splitting and the spin-orbit interaction
strength are responsible for the strong dependence of Kerr effect in Mn(Sb 1-xBix)
nanocrystalline films. It was shown that the large MO polar Kerr rotation angle is
correlated with a perpendicular magnetic anisotropy in nanocrystalline Co 3Pt films
Keywords: optical and magneto-optical properties; Kerr effect; nanocrystalline
films.
Paper received 14.03.02; revised manuscript received 23.05.02; accepted for publication 25.06.02.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 222-230.
PACS: 42.30.Va
Performance of optical and hybrid joint
transform correlators for tasks of optical
security
L.I. Muravsky1), Ya.P. Kulynych1), O.P. Maksymenko1), T.I. Voronyak1),
I.Y. Pogan1), F.L. Vladimirov2), S.A. Kostyukevych3), V.M. Fitio4)
1)
Karpenko Physico-Mechanical Institute, NAS of Ukraine, 5 Naukova Str., 79601 Lviv, Ukraine;
Phone: +380 (322) 63 3388; e-mail: dep24@ah.ipm.lviv.ua
2)
S.I.Vavilov State Optical Institute, 12 Birjevaya liniya, 199034 St. Petersburg, Russia;
Phone: +88(12)151 0852; e-mail: vlv@fl.spb.ru
3)
Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kiev, Ukraine;
Phone: +390 (44) 265 6205; e-mail: sergeyk@isp.kiev.ua
4)
National University “Lvivska Polytechnika”, 12 Bandera Str., 79013 Lviv, Ukraine;
Phone: +380 (322) 72 7747
Abstract. Performance of optical and hybrid joint transform correlators (JTCs) for
security verification of optical marks containing transformed phase masks (PMs) is
studied. The peak-to-noise ratio (PNR) and relative intensity of correlation peaks
are selected as basic criteria for comparative analysis of such two types of JTCs.
The theoretical model of an interference noise produced as a result of an input and
reference binary PMs cross-correlation on a conventional JTC output is developed.
The optically addressed spatial light modulator (OASLM) based on the
chalcogenide glass photoconductor – nematic liquid crystal structure is considered.
The experimental setup of an OASLM JTC is designed on the basis of this SLM.
The relations a PNR and relative intensity versus an effective focal length of an
optical Fourier processor are studied and the basic reasons limiting efficiency of the
setup are analyzed. The optoelectronic device for identification of credit cards
based on a hybrid optical-digital JTC architecture is built. The conditions of a joint
power spectrum recording by a CCD-camera in this device are investigated. The
concluding about expediency of OASLM JTC and optoelectronic device usage for
different security applications is made.
Keywords: optical security, transformed phase mask, joint transform correlator,
peak-to-noise ratio, spatial light modulator, optoelectronic device, interference
noise.
Paper received 05.06.01; revised manuscript received 03.06.02; accepted for publication 25.06.02.