Temperature transients and thermal properties of GaAs/AlGaAs quantumcascade lasers
Borak AJ, Phillips CC, Sirtori C
APPLIED PHYSICS LETTERS
82 (23): 4020-4022 JUN 9 2003
Document
type: Article
Language: English
Cited
References: 13
Times
Cited: 0
Abstract:
The use of a gated interband photoluminescence technique has allowed the study of
the temperature transients in the active volume of a quantum-cascade laser during
pulsed operation. The active region was found to rise by similar to40 K during a 150
ns current pulse, returning to the heat-sink temperature in similar to500 ns. The
measured temperature transients were fitted, using a one-dimensional heat diffusion
model, giving a value of k(AR) = 1.36+/-60.2 W cm(-1) K-1 for the active region
thermal conductivity, at 30 K. This is approximately ten times lower than literature
values for bulk AlGaAs alloys of equivalent composition and has significant
implications on the prospects for high-power continuous-wave device operation. (C)
2003 American Institute of Physics.
KeyWords Plus:
PHOTOLUMINESCENCE, SUPERLATTICES, CONDUCTIVITY, MICROPROBE
Addresses:
Borak AJ, Univ London Imperial Coll Sci Technol & Med, Dept Phys, Expt Solid
State Grp, London SW7 2AZ, England
Univ London Imperial Coll Sci Technol & Med, Dept Phys, Expt Solid State Grp,
London SW7 2AZ, England
Thomson CSF, F-91404 Orsay, France
Publisher:
AMER INST PHYSICS, MELVILLE
IDS Number:
685FA
ISSN:
0003-6951