Photoluminescence of MgxZn1-xO films grown on sapphire substrate
by MOCVD technique
C.Y. Liua,b, Y. C. Liua,b*, B.P.Zhangc, R. X. Mud
a
Center for Advanced Opto-Electronic Functional Material Research, Northeast Normal University,
Changchun 130024, People’s Republic of China
b
Department of Physics, Tonghua Teachers College, Tonghua, Jilin, China
c
d
Photodynamics Research Center, (RIKEN), Japan
Nanoscale Materials and Sensors, Department of Physics, Fisk University, Nashville, Tennessee 37028
ZnO-based semiconductors are attracting much attention because of the increasing
need for short-wavelength photonic devices and high-power, high-frequency
electronic devices owing to their large binding energy of excitons (60 meV)[1-2]. It
has been reported that the bandgap of ZnO could be widened up to ~ 4.0 eV by
forming a ternary MgZnO alloy[3]. The lattice constants of ternary alloy did not
change significantly compared to that of ZnO because of the similar ion radius
between Zn2+ and Mg2+. Here, we reported the optical properties and crystal structure
measurements on MgxZn1-xO films, which were deposited by metalorganic chemical
vapor deposition (MOCVD). The Mg concentration changed from range x=0 to 0.5.
The X-ray diffraction was used to characterize the crystal structure. The
temperature-dependent photoluminescence and time-resolved luminescence were
investigated.
*corresponding author e-mail: cyliu20032003@yahoo.com.cn
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