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J. Yan, Y. Kuo, and J. Lu, “Zirconium doped Hafnium Oxide High-k Gate
Dielectrics with sub-nanometer Equivalent Oxide Thickness by Reactive
Sputtering,” in Press, Electrochem. Solid-State Letts., 2007.
Y. Kuo and H. Nominanda, “Amorphous Silicon Based TFT and MIS Nonvolatile
Memories,” Accepted, MRS Symp. Proc. Amorphous and Polycrystalline Thin-Film
Silicon Science and Technology, 2007.
S. Ahmed, D.N. Buckley, S. Nakahara, T. T. Ahmed, and Y. Kuo, “An Isothermal
Annealing Study of Spontaneous Morphology Change in Electrodeposited Copper
Metallization,” J. Electrochem. Soc., 154(3) D103-D112 (2007).
W. Luo, T. Yuan, Y. Kuo, J. Lu, J. Yan, and W. Kuo, “Breakdown Phenomena of
Zirconium-Doped Hafnium Oxide High-k Stack with an Inserted Interface Layer,”
Appl. Phys. Letts., 89, 072901 (2006).
Y. Kuo and H. Nominanda, “Nonvolatile hydrogenated-amorphous-silicon thinfilm-transistor memory devices,” Appl. Phys. Letts., 89(1), in press (2006).
J. Lu, Y. Kuo, J. Yan, and C.-H. Lin, “Nanocrystalline Silicon Embedded
Zirconium-doped Hafnium Oxide High-k Memory Device,” Jpn. J. Appl. Phys.,
45(34), L901-L903 (2006).
Y. Kuo, invited, “Mixed Oxide High-k Gate Dielectrics - Interface Layer Structure,
Breakdown Mechanism, and New Memories,” ECS Trans. 4th International
Symposium on High Dielectric Constant Gate Stacks, 3(3), 253-266 (2006).
A. Birge, C.-H. Lin, and Y. Kuo, “Nanocrystalline Indium Tin Oxide Embedded
Zirconium-doped Hafnium Oxide for Nonvolatile Memory Applications” ECS
Trans. 4th International Symposium on High Dielectric Constant Gate Stacks, 3(3),
193-204 (2006).
Y. Kuo, J. Lu, J. Yan, and C.-H. Lin, “A Novel Hole-Based Memory Device
Fabricated from Nano ITO Embedded High-k Thin Films,” 6th IEEE Conference on
Nanotechnology, 2-3174 (2006).
W. Luo, T. Yuan, Y. Kuo, J. Lu, J. Yan, and W. Kuo, “Charge Trapping and
Dielectric Relaxation in Connection with Breakdown of High-k Gate Dielectric
Stacks” Appl. Phys. Letts., 88, 202904 (2006).
Y. Kuo, invited, “Mixed Oxides as High-k Gate Dielectric Films,” Electrochem.
Soc.Trans. Dielectrics for Nanosystems II: Materials Science, Processing,
Reliability, and Manufacturing, Eds, D. Misra, H. Iwai, 2(1), 13-22 (2006).
H. H. Lee and Y. Kuo, “Integration of an Amorphous Silicon Thin Film Transistor
with a Microchannel Electrophoresis for Protein Identification,” Electrochem.
Solid-State Letts., 9, J21-J23 (2006). This paper was selected by AIP to appear in
Virtual Journal of Nanoscale Science & Technology, 13(15), 2006.
J. Lu and Y. Kuo, “Hafnium-Doped Tantalum Oxide High-k Dielectrics with Sub-2
nm Equivalent Oxide Thickness,” Appl. Phys. Lett., 87(23), 232906 (2005).
J. Lu, Y. Kuo, and J.-Y. Tewg, “Hafnium-doped Tantalum Oxide High-k Gate
Dielectrics,” J. Electrochem. Soc., 153, G410-G416 (2006).
J. Lu, Y. Kuo, S. Chatterjee, and J.-Y. Tewg, “Metal Nitride Gate Electrode Effects
on Dielectric Properties of HfO2 High-k Gate Dielectrics,” JVST B, 24(1), 349-357
(2006).
Y. Kuo, J. Lu, and H. Nominanda, “Sputter Deposition of nm-Thick Films for
Passivation of Organic Pellicles,” Vacuum, 80, 698-703 (2006).
17. Y. Kuo, H. Nominanda, and G. Liu, “n-channel and p-channel a-Si: H Thin Film
Transistors with Copper Electrodes,” J. Korean Physical Soc., 48, S92-S97 (2006).
18. J. Yan, C.-H. Lin, A. Birge, J. Lu, and Y. Kuo, “Sub-1 nm Equivalent Oxide Thickness
Zirconium Doped Hafnium Oxide High-k Gate Dielectrics,” 53rd AVS Intl. Symp.,
Abstract #455, 2006.
19. G. Liu and Y. Kuo, “Grain Size Effects on Plasma-based Copper Etch Process,” 53rd
AVS Intl. Symp., Abstract #1167, 2006.
20. H. Nominanda and Y. Kuo, “Non-volatile Amorphous Silicon Thin Film Transistor
Memories with the a-Si:H Embedded Gate Dielectric Structure,” Electrochem. Soc.
ECS Trans. Thin Film Transistor Technologies VIII Symp., submitted, 2006.
21. Y. Kuo, invited, invited, “Mixed Oxide High-k Gate Dielectrics - Interface Layer
Structure, Breakdown Mechanism, and Memories,” Electrochem. Soc. Meet. Abstr.,
602, 1115 (2006).
22. A. Birge, C.-H. Lin, and Y. Kuo, invited, “Nanocrystalline Indium Tin Oxide
Embedded Zirconium-doped Hafnium Oxide for Nonvolatile Memory Applications,”
Electrochem. Soc. Meet. Abstr., 602, 1108 (2006).
23. H. Nominanda and Y. Kuo, “Non-volatile Amorphous Silicon Thin Film Transistor
Memories with the a-Si:H Embedded Gate Dielectric Structure,” Electrochem. Soc.
Meet. Abstr. - Electrochem. Soc. 602, 1601 (2006).
24. S. Chatterjee1, Y. Kuo, J. Lu, and J. Yan, “Influence of 1nm interface layer on
Electrical Properties of Zr doped HfO2 high-k gate dielectrics for sub-65 nm
technology generation,” Intl. Conf. Nanoscience Nanotech. (CNSNT), Extended Abst.,
Chennai, Tamilnadu, India, 08/26-28/06.
25. T. Yuan, W. Luo, Y. Kuo, J. Lu, J. Yan, S. Chatterjee, A. Birge, W. Kuo, invited,
“Charge Trapping and Dielectric Relaxation in Connection with Breakdown of High-k
Gate Dielectric Stacks,” IEEE Lester Eastman Conference on High Performance
Devices, Extended Abstract, 2006.
26. Y. Kuo, J. Lu, J. Yan, A. Birge, C.-H. Lin, S. Chatterjee, W. Luo, T. Yuan, J.-Y. Tewg,
and W. Kuo, “High Performance High-k Gate Dielectrics Based on Mixed Oxides,”
IEEE Lester Eastman Conference on High Performance Devices, Extended Abstract,
2006.
27. Y. Kuo, invited, “New Development of Non-LCD Applications of Thin Film
Transistors,” Digest of Technical Papers AM-FPD 06, 77-79, 2006.
28. Y. Kuo, “Plasma-Copper Reaction Mechanism in a Novel Copper Dry Etching
Process,” Procs. 6th Intl. Conf. On Reactive Plasmas and 23rd Symp. Plasma
Processing, 29-30 (2006).
29. Y. Kuo, J. Lu, J. Yan, T. Yuan, H. C. Kim, J. Peterson, M. Gardner, “Sub 2 nm Thick
Zirconium Doped Hafnium Oxide High-K Gate Dielectrics,” Elecrochem. Society
Symp. High Dielectric Constant Gate Stacks III, 2005-2, Meeting Abs. #0548, (2005).
30. J. Lu and Y. Kuo, “Bulk and Interface Material and Electrical Properties of HafniumDoped Tantalum Oxide High-K Films,” Elecrochem. Soc. Symp. High Dielectric
Constant Gate Stacks III, 2005-2, Meeting Abs. #0548 (2005).
31. G. Liu and Y. Kuo, “Control of Edge Shape, Sidewall Profile, and Sidewall Roughness
of the Plasma Etched Copper,” Elecrochem. Soc. Trans., Ed. G. Mathad, M.
Engelhardt, K. Kondo, H. Rathore, 1(11), 169-176 (2006).
32. G. Liu and Y. Kuo, “Edge and Sidewall Profile Control of Plasma Etched Copper,”
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Elecrochem. Society Symp. Copper Interconnections, Low-k Interlevel Dielectrics, and
New Contact and Barrier Metallurgies/Structure, Meeting Abs. # 600 (2005).
G. Liu and Y. Kuo, “Control of Edge Shape, Sidewall Profile, and Sidewall Roughness
of the Plasma Etched Copper,” Electrochem. Soc. Trans. Copper Interconnects, New
Contact and Barrier Metallurgies/Structures, and Low-k Inter-level Dielectrics III, to
vol. 1, in press (2006).
Y. Kuo, J. Lu, J. Yan, T. Yuan, H. C. Kim, J. Peterson, and M. Gardner, S.
Chatterjee, W. Luo, “Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K
Gate Dielectrics,” Elecrochem. Soc. Trans. High Dielectric Constant Gate Stacks
III, 1(5), 447-454 (2005).
Y. Kuo and J. Lu, “Bulk and Interface Material and Electrical Properties of
Hafnium-Doped Tantalum Oxide High-K Films,” Elecrochem. Society Transactions
High Dielectric Constant Gate Stacks III, 1(5), 177-183 (2005).
M. Ristova, Y. Kuo, H. H. Lee, and J.-Y. Tewg, “Effect of Long-term He–Ne Laser
Light Exposure and Subsequent Annealing on Hydrogenated Amorphous Silicon
PIN Photodiodes,” Semiconductor Science and Technology, 20, 1005-1009 (2005).
S. Chatterjee, Y. Kuo, J. Lu, J.-Y. Tewg, and P. Majhi, “Effects of Post Metallization
Annealing on the Electrical Reliability of Ultra-thin HfO2 Films with MoN and WN
Gate Electrode,” IEEE Intl. Reliability Physics Symp. Procs., 626-627 (2005).
J.-Y. Tewg,Y. Kuo, and J. Lu, “Suppression of Crystallization of Tantalum Oxide
Thin Film by Doping with Zirconium,” Electrochem. and Solid-State Letters, 8(1),
G27-G29 (2005).
J.-Y. Tewg, Y. Kuo, J. Lu, and B. W. Schueler, “Influence of a 5 Å Tantalum
Nitride Interface Layer on Dielectric Properties of Zirconium-Doped Tantalum
Oxide High-k Films,” J. Electrochem. Soc., 152(8), G617-G622 (2005).
J.-Y. Tewg, Y. Kuo, and J. Lu, “Zirconium-Doped Tantalum Oxide Gate Dielectric
Films Integrated with Molybdenum, Molybdenum Nitride, and Tungsten Nitride
Gate Electrodes,” J. Electrochem. Soc., 152(8), G643-G650 (2005).
S. Chatterjee, J. Lu, J.-Y. Tewg, Y. Kuo, and P. Majhi, “Electrical reliability
aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under
constant voltage stress,” Microelectronics Reliability, 46/1, 69-76 (2005).
J. Yan; J. Lu; S. Chatterjee, H. C. Kim, and Y. Kuo, “Zr-doped HfO2 High-k Dielectric
with an Inserted HfNx Interface Layer,” AVS Abstract # EM-TuP37, 2005.
Y. Kuo, J. Lu, and H. Nominanda, “Sputter Deposition of nm-Thick Films for
Passivation of Organic Pellicles,” Proc. 8th Intl. Symp. Sputtering and Plasma
Processes, ISSP 2005, 185-188 (2005).
J. Yan, Y. Kuo, S. Chatterjee, and J. Lu, “Electrical Characterization of Doped
Hafnium Oxide High-k Films,” Elecrochem. Society Symp. K1 – Advanced Gate Stack,
Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials,
Processes, and Equipment, Extended Abs. #645, PV 2005-01, 645 (2005).
J. Lu, J. Yan, S. Chatterjee, H. C. Kim, and Y. Kuo, “Doping of Hafnium Oxide HighK Film with Zirconium,” 6th AVS Symp. Intl. Conf. Microelectronics and Interfaces
(ICMI), 47-49 (2005).
Y. Kuo, invited keynote, “Doping of High-k Dielectric Thin Films for Future Nano
MOSFETs,” 2005 Proc., Proc. Symp. Nano Device Technology, 3-7 (2005).
Y. Kuo, invited, “High-k gate dielectrics - urgent nano issues in ULSIC,” Short course
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notebook, Symp. Nano Device Technology (2005).
Y. Kuo, H. Nominanda, and G. Liu, “n- and p-channel a-Si:H TFTs with copper
electrodes,” Proc. 1st International TFT Conference ’05, 6-9 (2005).
W. Luo, Y. Kuo, and W. Kuo, “Dielectric Relaxation and Breakdown Detection of
Doped Tantalum Oxide High-k Thin Films,” IEEE Trans. Device and Materials
Reliability, 4(3), 488-494 (2004).
H. Nominanda, G. Liu, H. H. Lee, and Y. Kuo, “The p-channel a-Si:H Thin Film
Transistor with Plasma Etched Copper Electrodes,” MRS Symp. Procs. Amorphous and
Nanocrystalline Silicon Science and Technology, Ed., G. Ganguly, M. Kondo, E. A.
Schiff, R. Carius, R. Biswas, 808, 667-672 (2004).
Y. Kuo, Y. Lei, and H. Nominanda, “Fabrication and Characterization of Hydrogenated
Amorphous Silicon Bipolar Thin Film Transistor (B-TFT),” MRS Symp. Procs.
Amorphous and Nanocrystalline Silicon Science and Technology, Ed., G. Ganguly, M.
Kondo, E. A. Schiff, R. Carius, R. Biswas, 808, 709-714 (2004).
J. Lu, J. -Y. Tewg, and Y. Kuo, “Engineering the nm-thick Interface Layer Formed
Between a High-k Film and Silicon,” MRS Symp. Procs. Integration of Advanced
Nanoelectronic Devices – Critical Issues and Solutions, 811, 81-86 (2004).
W. Luo, D. Sunardi, Y. Kuo, and W. Kuo, “Stress Test and Characterization of High-k
Thin Films,” IEEE Intl. Integrated Reliability Workshop Final Report, 18-23 (2004).
S. Lee and Y. Kuo, “Hydrogen Bromide Plasma-Copper Reaction in a New Copper
Etching Process,” Thin Solid Films, 457, 326-332 (2004).
J.-Y. Tewg, Y. Kuo, J. Lu, and B. W. Schueler, “Electrical and Physical
Characterization of Zirconium-Doped Tantalum Oxide Thin Films ,” J. Electrochem.
Soc., 151(3), F59-F67 (2004).
Y. Kuo and S. Lee, “A New Room-Temperature, High Rate Plasma –Based Copper
Etch Process,” Vacuum, 74(3-4), 473-477 (2004).
Y. Kuo, J. Lu, J. -Y. Tewg, and B. Schueler, “Effects of the TaNx Interface Layer on
Doped Tantalum Oxide High-k Films,” Vacuum, 74(3-4), 539-547 (2004).
W. Luo, W. Kuo, and Y. Kuo, “Bayesian Approach to Reliability Projection for High k
Dielectric Thin Films,” IEEE Intl. Integrated Reliability Workshop Final Report
(Proceedings), 186-187 (2004).
V. M. Ugaz and Y. Kuo, “Biochemical Reactions and Transport in Miniaturized
Convective Flow Systems,” 2nd Annual National Academies Keck Futures Initiative
Conference, Irvine, CA (2004).
Y. Kuo, “Doping of Metal Oxides for Gate Dielectric Applications,” Sematech Gate
Stack Engineering Workshop Records (2004).
Y. Kuo, “A Review on TFT Process and Device Reliability Issues,” IEEE Intl.
Integrated Reliability Workshop Conference Tutorial Lecture (2004).
Y. Kuo, S. Chatterjee, J. Lu, J.-Y Tewg, H.-C. Wen, and P. Majhi, “Electrical
Characterization of Ultra-Thin HfO2 Gate Dielectric with Metal Nitride Gate
Electrodes,” SEMATECH 1st Intl. Workshop on Electrical Characterization &
Reliability of High-k Devices, 23-35 (2004).
Y. Kuo, Invited short course review - “Reliability of a-Si TFTs From Processing to
Device Issues,” International Reliability Workshop (2004).
Y. Kuo and H. H. Lee, “A New Transistor-Driven Microchannel Electrophoresis
Device for Protein Analysis,” AIChE Symp. Electrophoretic Biomolecule Analysis on
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Microfluidic Platforms, abst. (2004).
Y. Kuo, J.-Y. Tewg, J. Lu, S. Chatterjee, P. Majhi, “Metal Nitride Gate Electrode
Effects on Dielectric Properties of High-k Gate Dielectrics,” AVS Symp. # 245 (2004);
J. Vac. Sci. Technol. (2004).
Y. Kuo and H. H. Lee, “A Novel TFT-Driven Microchannel Electrophoresis Device for
Protein Separation and Identification,” ECS TFTT VII Symp. Proceedings, 270-276
(2004).
Y. Lei, Y. Kuo, and H. Nominanda, “Hydrogenated Amorphous Silicon Bipolar
Junction Thin-Film Transistors (a-Si:H B-TFTs),” ECS TFTT VII Symp. Proceedings,
277-283 (2004).
Y. Kuo, Invited paper - “p-channel a-Si:H TFT with Copper Electrodes Defined with a
New Plasma-based Etching Method,” 2004 Taiwan Display Conference (TDC) Proc.,
4-7 (2004).
G. Liu and Y. Kuo, “Reactive Ion Etching of TiW Thin Film,” ECS Plasma Processing
XV Procs. (2004).
J. Lu and Y. Kuo, “Electrical and Material Characteristics of the sub 5 nm Hafnium
Doped Tantalum Oxide High k Film,” IEEE 4th NANO 2004 Symp. Procs., TU-P10
(2004).
Y. Kuo, “Introduction,” Chapter 1 in Amorphous Silicon Thin Film Transistors, Kluwer
Academic Publishers, 1-14 (2004).
Y. Kuo, “a-Si:H TFT Structures,” Chapter 4 in Amorphous Silicon Thin Film
Transistors, Kluwer Academic Publishers, 183-202 (2004).
Y. Kuo, “Deposition of Intrinsic and Doped Semiconductor Thin Films for a-Si:H
TFTs,” Chapter 5 in Amorphous Silicon Thin Film Transistors, Kluwer Academic
Publishers, 203-240 (2004).
Y. Kuo, “Deposition of Dielectric Thin Films for a-Si:H TFTs,” Chapter 6 in
Amorphous Silicon Thin Film Transistors, Kluwer Academic Publishers, 241-272
(2004).
Y. Kuo, “Plasma Etching in a-Si:H TFT Fabrication,” Chapter 7 in Amorphous Silicon
Thin Film Transistors, Kluwer Academic Publishers, 273-312 (2004).
Y. Kuo, “Non-LCD Applications of a-Si:H TFTs,” Chapter 11 in Amorphous Silicon
Thin Film Transistors, Kluwer Academic Publishers, 485-507 (2004).
Y. Kuo, “Introduction,” Chapter 1 in Polycrystalline Silicon Thin Film Transistors,
Kluwer Publishers, 1-7 (2004).
Y. Kuo, “Poly-Si TFTs for non-LCD applications,” Chapter 13 in Polycrystalline
Silicon Thin Film Transistors, Kluwer Publishers, 475-508 (2004).
Y. Kuo, J. Lu, and J.-Y. Tewg, “Tantalum Nitride Interface Layer Influence on
Dielectric Properties of Hafnium Doped Tantalum Oxide High Dielectric Constant Thin
Films,” Jpn. J. Appl. Phys., 42(7A), L769-L771 (2003).
M. Ristova, Y. Kuo, H. H. Lee, S. Lee and Y. J. Tewg, “Amorphous Silicon
Photodiodes for Image Sensing,” Applied Surface Science, 218, 44-53 (2003).
M. Ristova, Y. Kuo, S. Lee, “Influence of the Roughness of Molybdenum Back
Electrode on the Photodiode Characteristics under He–Ne illumination,” Semicond. Sci.
Technol., 18, 788-793 (2003).
Y. Kuo, T. Chung, and H. Nominanda, “Plasma Hydrogenation- A New Method of
Reducing the k Value of the Polyimide Film,” MRS Symp. Proc. - Materials,
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Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, Eds. A.
J. McKerrow, J. Leu, O. Kraft, T. Kikkawa, 766, 333-338 (2003).
W. Luo, D. Sunardi, Y. Kuo, and W. Kuo, “Stress Testing and Characterization of
High-k Thin Films,” IEEE Intl. Reliability Workshop Proc., 18-23 (2003).
M. Ristova and Y. Kuo, Invited paper - “Hydrogenated Amorphous Silicon for HeNe Red Laser Detection,” Proc. Balcan Physics Union, Vrnjaèka Banja, Serbia and
Montenegro, 2219-2226, (2003).
H. H. Lee and Y. Kuo, “Substrate Surface Effects on the Performance of a New Type
of Microchannel Electrophoresis Device for Protein Identification,” AIChE Symp.
Microscale Separations in Biotechnology, #471 (2003).
J.-Y. Tewg, J. Lu, and Y. Kuo, “Influence of the 5 Å TaNx Interface Layer on
Dielectric Properties of the Zr-doped TaOx High-k Film,” ECS 2nd Intl. Symp. High
Dielectric Constant Materials: Materials Science, Processing, Reliability, and
Manufacturing Issues, #534 (2003).
H. H. Lee and Y. Kuo, “DNA Separation and Identification Using a Micro-channel
Device Fabricated on Si and Glass Surfaces,” ECS Symp. Biological Nanostructures,
Materials, and Applications, #1190 (2003).
Y. Kuo, J. Lu, J.-Y. Tewg, and P. A. Zimmerman, “Passivation of the 157 nm Pellicle
with Nanometer Thin Films,” SPIE Photomask Symp. Proc., 5256-22 (2003).
Y. Kuo, J. Lu, J.-Y. Tewg, and P. A. Zimmerman, “Passivation of the 157 nm Pellicle
with Nanometer Thin Films,” Selete and Sematech 4th Intl. Symp.157nm Lithography
(2003).
Y. Kuo, J. Lu, J.-Y. Tewg, and B. Schueler, “The Influence of the 5Å TaNx Interface
Layer on Dielectric Properties of the sub 10 nm Doped Tantalum Oxide High k Film,”
Procs. 7th Intl. Symp. Sputtering and Plasma Processes (ISSP) (2003).
Y. Kuo, S. Lee, and J. Lu, “A New Room-Temperature, High Rate Plasma –Based
Copper Etch Process,” Procs. 7th Intl. Symp. Sputtering and Plasma Processes, 305-308
(2003).
Y. Kuo, Invited paper - “Thin Film Transistors in ULSI-Status and Future,” Proc. ECS
2003 ULSI Integration III Symp., 2003-06, 322-329 (2003).
J. Lu and Y. Kuo, “Influence of the 5Å TaNx Interface Layer on Doped Metal Oxide
High k Dielectric Characteristics,” Proc. ECS 2003 Emerging Oxide Symp., 2003-01,
374-380 (2003).
S. Lee and Y. Kuo, “A New Hydrogen Chloride Plasma-Based Copper Etching
Process,” Jpn. J. Appl. Phys., 41(12), 7345-7352 (2002).
Y. Kuo and H. H. Lee, “Plasma Enhanced Chemical Vapor Deposition of Silicon
Nitride Below 250C,” Vacuum, 66(3-4), 299-303 (2002).
Y. Kuo, J. Lu, P. C. Liu, F. M. Daby, and J.-Y. Tewg, “Influence of the Nanometer
Thick Interface Layer to Electrical Properties of the sub 10nm Doped Metal Oxide
High k Dielectrics,” IEEE 2nd NANO 2002 Symp. Proceedings, 251-253 (2002).
97. Y. Kuo, H. Nominanda, and M. Ristova, “Boron-doped a-Si:H Thin Film Process and
a-Si:H Photodiode for He-Ne Laser Light Detection,” Electrochem. Soc. Meeting, #672
(2002); Proce. Thin Film Transistor Technologies VI Symp., 2002-23, 292-300 (2002).
98. T. Chung, Y. Kuo, and H. Nominanda, “Plasma Modification of the Low k Polyimide
Film to Further Reduce Its k Value,” Salt Lake City Electrochem. Soc. Meeting, #427
(2002); Proc. Copper Interconnects, New Contact Metallurgies, and Low k Interlevel
Dielectric Symp., 22, 162-169 (2002).
99. J.-Y. Tewg, J. Lu, Y. Kuo, and B. W. Schueler, “Electrical and Physical
Characterization of Zirconium-Doped Tantalum Oxide Films,” Salt lake City
Electrochem. Soc. Meeting, #376 (2002); Proceedings of 1st Intl. Symp. High
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Dielectric Constant Materials: Materials Science, Processing, Manufacturing, and
Reliability Issues, 2002-28, 75-82 (2003).
J. Lu, J.-Y. Tewg, Y. Kuo, and P. C. Liu, “Hafnium-Doped Tantalum Oxide High k
Dielectrics,” Salt Lake City Electrochem. Soc. Meeting, #379(2002); Proceedings of 1st
Intl. Symp. High Dielectric Constant Materials: Materials Science, Processing,
Manufacturing, and Reliability Issues, 2002-28, 105-112 (2003).
Y. Kuo and K. Suzuki, “Advanced Flat-Panel Displays and Materials,” MRS Bulletin,
27(11), 859-860 (2002).
Y. Kuo and T. Chung, “Reduction of the k Value of the Low k Polyimide Film by
Plasma Hydrogenation,” AVS 49th Intl. Symp., #219 (2002).
J. Lu, J.-Y. Tewg, Y. Kuo, P. C. Liu, and B. W. Schueler, “Electrical and Material
Properties of 10 nm Thick Hf-Doped Tantalum Oxide High k Dielectrics,” AVS 49th
Intl. Symp., #251 (2002).
H. H. Lee and Y. Kuo, “A New Microchannel Device for Proteins Separation and
Identification,” 2002 IEEE Sensors Proceedings, 454-459 (2002). (Nominated as Best
Conference Paper Award)
Y. Kuo, J. Y. Tewg, and J. Lu, “Zirconium-Doped Tantalum Oxide High k Dielectric,”
AVS 3rd Intl. Microelectronic and Interface Proceedings, 133-135 (2002).
106. S. Lee and Y. Kuo, “HBr Plasma Based Copper Etch Process,” Philadelphia
Electrochem. Soc. Meeting Abstract, #433 (2002); Proceedings of XIV Plasma
Processing Symp., 2002-17, 299-304 (2002).
107. H. H. Lee and Y. Kuo, “Factors Affecting the Protein Detection Efficiency of a New
Microchannel Electrophoresis Device,” Philadelphia Electrochem. Soc. Meet., #1525
(2002).
108. H. Nominanda and Y. Kuo, “Process and Material Properties of PECVD Boron-Doped
Amorphous Silicon Film,” Philadelphia Electrochem. Soc. Meet., #399 (2002);
Proceedings of XIV Plasma Processing Symp., 2002-17, 1-9 (2002).
109. Y. Kuo and H. H. Lee, “Microchannel Electrophoresis Device for Separation and In
Situ Detection of Proteins,” Electrochem. and Solid-State Letts., 4(10), H23-H25
(2001).
110. S. Lee and Y. Kuo, “Chlorine Plasma/Copper Reaction in a New Copper Dry Etching
Process,” J. Electrochem. Soc., 148(9), G524-G529 (2001).
111. Y. Kuo and S. Lee, “Room-Temperature Copper Etching Based on a Plasma-Copper
Reaction,” Appl. Phys. Lett., 78(7), 1002-1004 (2001).
112. Y. Kuo, “Thin-Film Transistors,” Encyclopedia of Physical Science and Technology,
3rd ed., Academic Press, 16 (2001).
113. Y. Kuo, “Solid State Devices,” McGraw-Hill 2001 Yearbook of Science &
Technology, 352-357 (2001).
114. Y. Kuo and H. H. Lee, “A New Microchannel Device for Proteins Separation and
Detection,” Microfluidics and BioMEMS, SPIE Procs. 4560, 102-107 (2001).
115. H. H. Lee and Y. Kuo, “A New Micro-Fluidic Device for Protein Separation Fabricated
on a Silicon Substrate,” ECS Procs. Chemical and Biological Sensors and Analytical
Methods II, 2001-18, 395-398 (2001).
116. M. Ristova, Y. Kuo, H. H. Lee, S. Lee, and J. Y. Tewg, “Amorphous Silicon
Photodiode for Image Sensing,” AVS 48th Intl. Symp., #1343 (2001).
117. S. Lee and Y. Kuo, “Plasma-Based Copper Etch Process – Additive Gas Effects,” AVS
48 th Intl. Symp., #255 (2001).
118. Y. Kuo and H. H. Lee, “Plasma Enhanced Chemical Vapor Deposition of Silicon
Nitride Below 250C,” Procs. 6 th Intl. Symp. Sputtering and Plasma Processes, 217219 (2001).
119. Y. Kuo, J.-Y. Tewg, and J. P. Donnelly, “Dopant Effects on TaOx-Based High k
Dielectric Films,” ECS Proc. Intl. Semiconductor Technology Conf., 2001-17, 324-327
(2001).
120. Y. Kuo, J. Y. Tewg, J. Lu, and J. Donnelly, “Doping of Tantalum Oxide High k
Dielectric Thin Films,” Intl. Sematech Gate Stack Engineering Working Group, sec. 11
(2001).
121. Y. Kuo, J.-Y. Tewg, and J. P. Donnelly, “Process and Material Characteristics of
Titanium and Other Doped Tantalum Oxide Films,” Electrochem. Soc. Meet. Abstracts,
2001-1, #232 (2001).
122. Y. Kuo, J.-Y. Tewg, and J. P. Donnelly, “Anomalous TixTayO High k Thin Films,”
Electrochem. Soc. Meet. Abst., 2001-1, #227 (2001).
123. Y. Kuo and S. Lee, “A Novel Plasma-Based Copper Dry Etching Method”, Jpn. J.
Appl. Phys. 39(3AB), L188-L190 (2000).
124. Y. Kuo and S. Lee, “A Novel Room-Temperature Plasma-Based Copper Etching
Process for VLSI,” Procs. VLSI Multilevel Interconnection Conference, 39-44 (2000).
125. Y. Kuo, S. Lee, S. Lee, J. P. Donnelly, J.-Y. Tewg, and H. H. Lee, “Amorphous Silicon
Thin-Film Transistors Fabricated with a New Copper Etching Method,” Electrochem.
Soc. TFTT V Symp. Proceedings, 2000-31, 34-39 (2001).
126. S. Lee and Y. Kuo, “Process Study of A New Copper Dry Etching Method – The HCl
Chemistry,” Electrochem. Soc. Symp. Procs. Plasma Processing XIII, 2000-6, 361-367
(2000).
127. Y. Kuo, J. Donnelly, and J. Tewg, “New High k Thin Films with Improved Physical
and Electrical Properties,” AVS 47 th Intl. Symp., #257 (2000).
128. Y. Kuo, J. Donnelly, and J. Y. Tewg, “Doped Tantalum Oxide High K Dielectric Thin
Films,” ECS Meeting Abstracts, 2000-2, #813 (2000).
129. Y. Kuo, Invited, “CFC-Free Plasma Technology in High-Tech Industry,” Proc. Summer
School on Advanced Materials for Industrial Applications, 97-106 (1999).
130. Y. Kuo, “Some Issues on Hydrogen and Hydrogenation of Plasma Enhanced Chemical
Vapor Deposited Films in a-Si:H Thin-Film Transistors,” Vacuum, 59, 484-491 (1999).
131. Y. Kuo, M. Okajima, and M. Takeichi, “Amorphous Silicon Thin Film Transistor
Array Fabrication – Examples on the Critical Applications of Plasma Technology,”
IBM J. Research and Development, 43(1/2), 73-88 (1999).
132. Y. Kuo, “Accumulation Layers,” Encyclopedia of Electrical and Electronics
Engineering, John Wiley & Sons, Inc. (1999).
133. Y. Kuo, “Integrated Interlaced Sensor Arrays and Display,” Sensitive Skin, World
Scientific Selected Topics in Electronics and Systems, 18, 140-142 (1999).
134. Y. Kuo and S. Lee, “A New Copper Reactive Ion Etching Process,” ECS Symp.
Proceedings Plasma Etching Processes for Sub-Quarter Micron Devices, 99-30, 328335 (1999).
135. Y. Kuo, Invited paper - “Material Issues in a-Si:H and Poly-Si Thin-film Transistors for
Microelectronics and Optoelectronics Applications,” Symp. Procs. ISDRS (1999).
136. Y. Kuo and S. Lee, “ A Reactive Ion Etching Base Copper Etch Process,” American
Institute of Chemical Engineers Annual Meeting Symp. Plasma Processing I (1999).
137. Y. Kuo, “Some Issues on Hydrogen and Hydrogenation of Plasma Enhanced Chemical
Vapor Deposited Films in a-Si:H Thin-Film Transistors,” 99 ISSP V Symp.
Proceedings, 153-156 (1999).
138. Y. Kuo and T. L. Tai, “High Temperature Reactive Ion Etching of Indium Tin Oxide
with HBr and CH4 Mixtures,” J. Electrochem. Soc., 145(21), 4313-4317 (1998).
139. P. M. Fryer, E. Colgan, E. Galligan, W. Graham, R. Horton, L. Jenkins, R. John, Y.
Kuo, K. Latzko, F. Libsch, A. Lien, R. Nywening, R. Polastre, M. E. Rothwell, J.
Wilson, R. Wisnieff, and S. Wright, “High Conductivity Gate Metallurgy for
TFT/LCD,” MRS Proc. Amorphous and Microcrystalline Silicon Technology Symp.,
507, 37-46 (1998).
140. E. G. Colgan, P. M. Alt, R. L. Wisnieff, P. M. Fryer, E. A. Galligan, W. S. Graham, P.
F. Greier, R. R. Horton, H. Ifill, L. C. Jenkins, R. A. John, R. I. Kaufman, Y. Kuo, A. P.
Lanzetta, K. F. Latzko, F. R. Libsch, S.-C. A. Lien, S. E. Millman, R. W. Nywening, R.
J. Polastre, C. G. Powell, R. A. Rand, J. J. Ritsko, M. B. Rothwell, J. L. Staples, K. W.
Warren, J. S. Wilson, S. L. Wright, “A 10.5-in-diagonal SXGA Active-Matrix
Display,” IBM J. Res. Develop., 42(3/4), 427-444 (1998).
141. Y. Kuo and K. Latzko, “Deposition of Highly Conductive n+ Silicon Film for a-Si:H
Thin Film Transistor,” MRS Proc., Amorphous and Microcrystalline Silicon
Technology Symp., 507, 891-896 (1998).
142. Y. Kuo, “Reactive Ion Etching of Indium Tin Oxide by SiCl4-based Plasma – Substrate
Temperature Effect,” Vacuum, 51(4), 777-779 (1998).
143. Y. Kuo, “Plasma Enhanced Chemical Vapor Deposited Silicon Nitride as a Gate
Dielectric Film for Amorphous Silicon Thin Film Transistors – a Critical Review,”
Vacuum, 51(4), 741-745 (1998).
144. Y. Kuo, “Hydrogenation of Amorphous Silicon Thin Film Transistors,” Electrochem.
Soc. Proc. Thin Film Transistor Technologies IV, 98-22, 191-197 (1998).
145. Y. Kuo, “Reactive Ion Etching of Indium Tin Oxide – HBr Chemistry,” Electrochem.
Soc. Proc. Plasma Processing XII, 197-202 (1998).
146. Y. Kuo, “Doping Gas Effects on Plasma Enhanced Chemical Vapor Deposition On
Heavily Phosphorus-Doped n+ Silicon Films,” Appl. Phys. Lett., 71(19), 2821-2823
(1997).
147. Y. Kuo, “High Temperature Reactive Ion Etching of Indium Tin Oxide - the NonAdditive Feed Gas Effect,” Electrochem. Soc. Thin Film Processing Proceedings, 9730, 71-75 (1997).
148. Y. Kuo, “High Temperature Reactive Ion Etching of Indium Tin Oxide,” J.
Electrochem. Soc., 144(4), 1411-1416 (1997).
149. Y. Kuo, “Anomalous High Rate Reactive Ion Etching Process for Indium Tin Oxide,”
Jpn. J. Appl. Phys. Part 2, 36(5B), L629-L631 (1997).
150. Ch. B. Lioutas, N. Vouroutzis, E. C. Paloura, and Y. Kuo, “Electron-Beam Induced
Damages in N-rich SiNx Films Deposited by PECVD,” Thin Solid Films, 297, 28-31
(1997).
151. Y. Kuo, “Non-Additive Gas Effect on High Temperature Reactive Ion Etching of
Indium Tin Oxide,” Electrochem. Soc. Extended Abst., 97-2, 1577-1578 (1997).
152. Y. Kuo, “Temperature Effect on Reactive ion Etching of Indium Tin Oxide,”
Electrochem. Soc. Extended Abst., 97-1, 1176-1177 (1997).
153. Y. Kuo, Invited paper - “PECVD Silicon Nitride as a Gate Dielectric Film for
Amorphous Silicon Thin Film Transistors - A Critical Review,” Proc., 4 th Intl. Symp.
on Sputtering and Plasma Processes, 335-344 (1997).
154. Y. Kuo, “Reactive Ion Etching of Indium Tin Oxide by SiCl4-Based Plasmas Substrate Temperature Effect,” Proc. ISSP'97 4 th Intl. Symp. Sputtering and Plasma
Processes, 563-568 (1997).
155. Y. Kuo, “Characterization of PECVD Silicon Carbon Oxynitride - Application to aSi:H Thin Film Transistor As A Gate Dielectric Layer,” Plasma Processing XI Symp.
Proc. Electrochem. Soc., 96-12, 668-674 (1996).
156. E. G. Colgan, P. M. Fryer, E. Galligan, W. Graham, R. Horton, D. Hunt, L. Jenkins, R.
John, P. Koke, Y. Kuo, K. Latzko, F. Libsch, A. Lien, I. Lovas, R. Nywening, R.
Polastre, M. E. Rothwell, J. Wilson, R. Wisnief, and S. Wright, “Copper-Gate Process
for High Information Content a-Si TFT-LCDs,” Proc. AM-LCD '96, 29-36 (1996).
157. E. C. Paloura, N. Vouroutzis, Ch. Lioutas, W. M. Arnoldbik, F. H. P. M. Habraken, and
Y. Kuo, “Microstructure Modifications Induced by Bonded Hydrogen in N-rich SiNx:H
Films,” J. Appl. Phys., 80(10), 5742-5747 (1996).
158. Y. Kuo and P. M. Kozlowski, “Polycrystalline Silicon Formation by Pulsed Rapid
Thermal Annealing of Amorphous Silicon,” Appl. Phys. Lett., 69(8), 1092-1095 (1996).
159. Y. Kuo, “Horizontally Redundant, Split-Gate Thin Film Transistors,” J. Electrochem.
Soc., 143(8), 2680-2682 (1996).
160. Y. Kuo, “Non-Photosensitive, Vertically Redundant Thin Film Transistor,” J.
Electrochem. Soc., 143(4), 1469-1471 (1996).
161. Y. Kuo, Invited paper - “Fundamentals of Plasma Etching of Indium Tin Oxide Thin
Film,” Proc. 54th Japan Domestic Symp. on Sputtering and Plasma Processes, 11(5),
9-26 (1996).
162. Y. Kuo, “High Rate Polycrystalline Silicon Formation on Low Temperature Glass,”
ECS Thin Film Transistor Technologies III Proc., 96-23, 30-35 (1996); Electrochem.
Soc. Extended Abst., 96-2, 653-654 (1996).
163. Y. Kuo, “Plasma Etching Mechanism of Metal Oxides Derived from RIE of Ta2O5 and
TiO2,” Plasma Processing XI Symp. Proc. Electrochem. Soc., 96-12, 536-544 (1996).
164. Y. Kuo, “Plasma Etching of Metal Oxides,” Electrochem. Soc. Extended Abst., 96-1,
282-283 (1996).
165. Y. Kuo, “Silicon Carbon Oxynitride as a Gate Dielectric of a Thin Film Transistor,”
Electrochem. Soc. Extended Abst., 96-1, 327-328 (1996).
166. Y. Kuo, “Single-Gate Multichannel Amorphous Thin-Film Transistors,” Appl. Phys.
Lett., 67(21), 3174-3176 (1995).
167. Y. Kuo, “Thin-Film Transistors with Multistep Deposited Amorphous Silicon Layers,”
Appl. Phys. Lett., 67(15), 2173-2175 (1995).
168. Y. Kuo, “Plasma Etching and Deposition for a-Si:H Thin Film Transistors,” J.
Electrochem. Soci., 142(7), 2486-2506 (1995).
169. Y. Kuo, “Thin Film Transistors with Layered a-Si:H Structure,” Mat. Res. Society
Proc. Amorphous Silicon, 377, 701-706 (1995).
170. Y. Kuo, “PECVD Silicon Nitride as a Gate Dielectric for Amorphous Silicon Thin Film
Transistor - Process and Device Performance,” J. Electrochem. Soc., 142(1), 186-190
(1995).
171. E. C. Paloura, Y. Kuo, and W. Braun, “On the Effect of Bonded Hydrogen in the Local
Microstructure of PECVD SiNx:H Films,” Physica B, 208/209, 562-564 (1995).
172. Y. Kuo, “Deposition and Etching Mechanisms in Plasma Thin Film Processes,” invited,
Appl. of Particle and Laser Beams in Materials Technology, NATO ASI series, 283,
581-593 (1995).
173. Y. Kuo and A. Schrott, “Plasma Etch of Titanium and Titanium Oxide-General
Discussion on Plasma Etch of Metal and Metal Oxide,” Proc. 5th ULSI Symp.
Electrochem. Soc., 95-5, 246-257 (1995).
174. Y. Kuo, Invited paper - “A Global View of Thin Film Transistor Technologies,” Flat
Panel Displays: Views from the US and Japan, Stanford University, 53-76 (1995).
175. Y. Kuo, “Plasma Etch of Titanium and Titanium Oxide,” Electrochem. Soc. Extended
Abst., 95-1, 490-491 (1995).
176. E. C. Paloura, Y. Kuo, and W. Braun, “On the Effect of Bonded Hydrogen in the Local
Microstructure of PECVD SiNx:H Films,” Proc. 8th XAFS Conf. (1994).
177. Y. Kuo, E. C. Paloura, and C. Dzioblkowski, “Characterization of PECVD SiNx
Process and Materials - for TFT Gate Dielectric Applications,” Electrochem. Soc.
Symp. Proc. 10th Plasma Processing, 94(20), 513-524 (1994).
178. P. M. Fryer, L. Jenkins, R. John, Y. Kuo, A. Lien, R. Nywening, B. Owens, L,
Palmateer, M. E. Rothwell, J. Souk, J. Wilson, S. Wright, J. Batey, and R. Wisnieff, “A
High-Resolution Copper Gate TFT/LCD Process,” Conf. Record 1994 Intl. Display
Research Conf. and Intl. Workshops on Active-Matrix LCDs & Displays, 146-149
(1994).
179. Y. Kuo, “Thin Film Transistors with Graded Gate Dielectrics,” J. Electrochem. Soc.,
141(4), 1061-1065 (1994).
180. Y. Kuo, “Reactive Ion Etch Processes for Amorphous Silicon Thin Film Transistors - a
SiCl4 Based Chemistry,” J. Electrochem. Soc., 141(2), 502-506 (1994).
181. Y. Kuo, “Reactive Ion Etching Processes for Amorphous Germanium Alloys,” Mat.
Res. Society Symp. Proc. Materials Synthesis and Processing Using Ion Beams, 316,
1041-1046 (1994).
182. Y. Kuo and F. R. Libsch, “a-Si:H TFTs with a Graded SiNx Dielectric StructureInterface Layer Thickness Effects and Characterization,” ECS Proc. 2nd Thin Film
Transistor Technol., 94-35, 41-51 (1994).
183. Y. Kuo, “Plasma Thin Film Technologies for a-Si:H Thin Film Transistors,” ECS Proc.
2nd Thin Film Transistor Technol., 94-35, 174-187 (1994).
184. Y. Kuo, “Plasma Technologies for a-Si:H TFTs,” Electrochem. Soc. Extended Abst.,
94-2, 733-734 (1994).
185. Y. Kuo and F. R. Libsch, “a-Si:H with a Graded Gate SiNx Dielectric Structure Interface Layer Thickness Effects and Characterization,” Electrochem. Soc. Extended
Abst., 94-2, 698-699 (1994).
186. Y. Kuo, “PECVD and Plasma Etching for a-Si:H TFT Fabrication,” Electrochem. Soc.
Extended Abst., 94-2, 733-734 (1994).
187. Y. Kuo, “Reactive Ion Etch of Amorphous Silicon Germanium Films - Comparison
with a-Si:H Etch in CF2Cl2 and CF4 Plasmas,” Electrochem. Soc. Symp. Proc. 10 th
Plasma Processing, 94(20), 492-500 (1994).
188. Y. Kuo, “The Etch Mechanism in the Low Refractive Index Silicon Nitride Plasma
Enhanced Chemical Vapor Deposition Process,” Appl. Phys. Lett., 63(2), 144-146
(1993).
189. S. L. Wright, M. B. Rothwell, J. H. Souk, and Y. Kuo, “a-Si Thin Film Transistors
Using Dilute-Gas Plasma-Enhanced Chemical Vapor Deposition,” IEEE Trans.
Electron Devices, 40(11), 2128-2129 (1993).
190. Y. Kuo, “Plasma Swelling of Photoresist,” Jpn. J. Appl. Phys., 32(1), 1AB, L126-L128
(1993).
191. Y. Kuo, “Reactive Ion Etching of Sputter Deposited Tantalum with CF4, CF3Cl, and
CHF3,” Jpn. J. Appl. Phys., 32(1), 1A, 179-185 (1993).
192. Y. Kuo, “PECVD of SiNx for Thin Film Transistors,” Electrochem. Soc. 12th CVD
Symp. Proc., 93-2, 350-356 (1993).
193. Y. Kuo, “New Methods of Defining Fine Lines and Small Geometry Patterns from
Polymer Swelling Phenomenon,” IBM Technical Disclosure Bulletin, 36(06A), 193194 (1993).
194. D. Dove and Y. Kuo, “Method for the Fabrication of a Microlithography Mask
Incorporating Phase Shift and Light Absorption Regions”, IBM Technical Disclosure
Bulletin, 36(05), 51-52 (1993).
195. Y. Kuo, Invited paper - “Plasma Processes for Amorphous Silicon Thin Film
Transistors,” Proc. Intl. Semiconductor Device Research Symp. 1, 25-28 (1993).
196. Y. Kuo, “Plasma Enhanced Chemical Vapor Deposition of SiNx for Thin Film
Transistors,” Electrochem. Soc. Extended Abst., 93-1, 1818-1819 (1993).
197. Y. Kuo, “Large Area Plasma Enhanced Chemical Vapor Deposition of
Nonstoichiometric Silicon Nitride,” Mat. Res. Society Proc. Chemical Perspectives of
Microelectronic Materials III, 282, 623-629 (1992).
198. Y. Kuo, “Reactive Ion Etch Damages in Inverted, Tri-layer Thin Film Transistor,”
Appl. Phys. Lett., 61(23), 2790-2792 (1992).
199. Y. Kuo, “Reactive Ion Etching Technology in Thin Film Transistor Processing,” IBM J.
R&D, 36(1), 69-75 (1992).
200. Y. Kuo, “A Self-aligned, Tri-layer, a-Si:H Thin Film Transistor Prepared from Two
Photomasks,” J. Electrochem. Soc., 139(4), 1199-1204 (1992).
201. Y. Kuo, “Reactive Ion Etching of Sputter Deposited Tantalum Oxide and Its Etch
Selectivity to Tantalum,” J. Electrochem. Soc., 139(2), 579- 583 (1992).
202. Y. Kuo and M. Crowder, “Reactive Ion Etching of n+ a-Si:H: Plasma Damage to
PECVD Silicon Nitride and Application to Thin Film Transistor Preparation,” J.
Electrochem. Soc., 139(2), 548- 552 (1992).
203. A. P. Ghosh and Y. Kuo, “Phase Shift Masks Using Planarized Buried Attenuating
Structure,” IBM Technical Disclosure Bulletin (1992).
204. Y. Kuo, Invited “Thin Film Technology for AMLCD,” (Chinese) Opto News and
Letters, 133, 13-15 (1992).
205. Y. Kuo, “Chlorofluorocarbon-Free Plasma Etching Processes for Thin Film Transistor
Fabrication,” Electrochem. Soc. Proc. 1st Symp. Thin Film Transistor Technol., 92-24,
124-137 (1992).
206. Y. Kuo, F. Libsh, and A. Ghosh, “Electrical and Optical Stress of Self-aligned, 2Photomask, Tri-layer TFT,” Electrochem. Soc. Proc. 1st Symp. Thin Film Transistor
207.
208.
209.
210.
211.
212.
213.
214.
215.
216.
217.
218.
219.
220.
221.
222.
223.
224.
Technol., 92-24, 59-69 (1992).
Y. Kuo, Invited paper - “A Review of Thin Film Technologies in Preparing Thin Film
Transistors for Liquid Crystal Displays,” Electrochem. Soc. Extended Abst., 92-2, 786787 (1992).
Y. Kuo, Invited paper - “Chlorofluorocarbon-Free Plasma Etching Processes for Thin
Film Transistor Fabrication,” Electrochem. Soc. Extended Abst., 92-2, 307-308 (1992).
Y. Kuo, F. Libsh, A. Ghosh, “Electrical and Optical Stress of Self-aligned, 2Photomask, Tri-layer TFT,” Electrochem. Soc. Extended Abst., 92-2, 434-435 (1992).
Y. Kuo, “Reactive Ion Etch Induced Device Characteristics Changes in Thin Film
Transistor,” Electrochem. Soc. Extended Abst., 92-1, 134-135 (1992).
Y. Kuo, “Photoresist Swelling in Hydrogen-Containing Freon Plasmas,” Electrochem.
Soc. Extended Abst., 92-1, 193-194 (1992).
Y. Kuo, “The Role of Oxygen in the CF2Cl2 Reactive Ion Etching of PECVD Films,”
Mat. Res. Society Proc., 223, 249-254 (1991).
Y. Kuo, “A New Process Using Two Masks to Prepare Tri-layer Thin Film
Transistors,” J. Electrochem. Soc., 138(2), 637-638 (1991).
Y. Kuo, “Reactive Ion Etch of Sputter Deposited Tantalum - Process and Mechanisms,”
Electrochem. Soc. Extended Abst., 91-1, 677-678 (1991).
Y. Kuo, “A New Thin Film Transistor Structure and Its Processing Method for Liquid
Crystal Displays,” Society Photo Instr. Eng. Proc. 1456, 288-299 (1991).
Y. Kuo, “Characterization of Indium Tin Oxide and Reactive Ion Etched Indium Tin
Oxide Surfaces,” Jpn. J. Appl. Phys., 29(10), 2243-2246 (1990).
Y. Kuo, “Reactive Ion Etching Processes for Preparing Thin Film Transistors,” Mat.
Res. Society Proc. 2nd Int'l Conf. Elec. Mats., 545-550 (1990).
Y. Kuo, “Characterization of Reactive Ion Etched Indium Tin Oxide Surfaces,” Proc.
3rd MicroProcess Conf. Jpn. Society Appl. Phys., 130-131 (1990).
Y. Kuo, “Process for Making complete Two Mask Thin Film Transistors with the DualTone Photoresist Method,” IBM Technical Disclosure Bulletin, 33(6B), 426-427
(1990).
Y. Kuo, “Factors Affecting the Molybdenum Line Slope by Reactive Ion Etching,” J.
Electrochem. Soc., 137(6), 1907-1911 (1990).
Y. Kuo, “Reactive Ion Etching of PECVD Amorphous Silicon and Silicon Nitride Thin
Films with Fluorocarbon Gases,” J. Electrochem. Soc., 137(4), 1235-1239 (1990).
Y. Kuo and J. R. Crowe, “Slope Control of Molybdenum Lines Etched with RIE,” J.
Vac. Sci. and Technol., A8(3), 1529-1532 (1990).
Y. Kuo, “Reactive Ion Etching Selectivity of PECVD Silicon to Silicon Nitride Feeding Gas Effects,” J. Vac. Sci. and Technol., A8(3), 1702-1705 (1990).
Y. Kuo, “Reactive Ion Etching of PECVD n+ a-Si:H and Plasma Damage to PECVD
Silicon Nitride Film,” Electrochem. Soc. Proc. 8th Symp. Plasma Processing, 90-14,
324-334 (1990).
225. Y. Kuo and J. R. Crowe, “Reactive Ion Etching of Indium Tin Oxide with
Fluorochlorocarbon Gases,” Electrochem. Soc. Proc. 8th Symp. Plasma Processing, 9014, 765-772 (1990).
226. Y. Kuo, “Reactive Ion Etching of PECVD n+ a-Si:H and Silicon Nitride - Selectivity
and Plasma Damage,” Electrochem. Soc. Extended Abst., 90-1, 158-159 (1990).
227. Y. Kuo and J. R. Crowe, “Reactive Ion Etching of Indium Tin Oxide - the Etching
Mechanism and the Diluent Effect,” Electrochem. Soc. Extended Abst., 90-1, 226-227
(1990).
228. Y. Kuo, “Thin Film Technologies in Active Matrix Addressing System of LCDs,” Int.
Society Optical Eng. Proc., 1117, 114-122 (1989).
229. Y. Kuo and R. Troutman, “TFT/LCD Damascene Lines”, IBM Technical Disclosure
Bulletin, 32(3B), 67-68 (1989).
230. Y. Kuo, “Thin Film Transistors with Low Contact Resistance Prepared by Selective
Tungsten Deposition Technology,” IBM Technical Disclosure Bulletin, 32(1), 164-165
(1989).
231. Y. Kuo and J. R. Crowe, “Selective RIE of PECVD a-SiH and SiNx with CF4 and
C2Cl6 Gases,” Proc. 7th Inter. Colloquium on Plasma for Deposition and EtchingCIPG, 89, 270-272 (1989).
232. Y. Kuo, “Reactive Ion Etching of PECVD Amorphous Silicon and (100) Crystalline
Silicon with CF4 and CF3Cl Gases,” Electrochem. Soc. Extended Abst., 89(1), 300-302
(1989).
233. Y. Kuo, “Advanced VLSI Isolation Technologies,” Semiconductor Fabrication:
Technology and Metrology, ASTM STP 990, 284-302 (1988).
234. Y. Kuo and J. R. Crowe, “Factors Affecting Reactive Ion Etching of Corning 7059
Glass,” Int. Society Optical Eng. Proc., 1037, 103-107 (1988).
235. Y. Kuo and J. R. Crowe, “Reactive Ion Etching of A Multicomponent Glass Substrate,”
Int. Society Optical Eng. Proc., 945, 103-110 (1988).
236. Y. Kuo, “Planarization of Multilevel Metalization Processes: A Critical Review,” SPIE
Proc. Advanced Processing of Semiconductor Devices, 797, 49-60 (1987).
237. Y. Kuo, “A Theoretical Study of the Plasma Etchback Planarization Process,” Mat. Res.
Society Proc., 76, 209-214 (1986).