Curriculum Vitae Dr. Mykola Vuichyk V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Nauki pr., 41, Kiev, 03028, Ukraine Department of Physics and Technology of Low Dimensional Nanostructures Phone: +380445251813 Fax: +380445258342 Mobile: +380975931539 E-mail: vuichyk@gmail.com PERSONAL DETAILS Date of birth 14 December,1975 Nationality Ukrainian Citizenship Ukraine Marital status unmarried, no children EDUCATION PhD study 2000-2003 Ph.D. Thesis: University 1993-1998: Master Thesis: WORK EXPERIENCE SCIENTIFIC ACTIVITIES & PROFESSIONAL SKILLS V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, “Photoluminescence and Raman scattering in self- assembled CdSe/ZnSe nanoislands” Graduate study (MSc equivalent) at the Rivne State Institute, Rivne, Ukraine "Investigation of electroluminescence properties ZnS electroluminophores" 2003- 2009: Scientist, Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, Kyiv, Ukraine 2009 - 2010: Postdoctoral Researcher in Chemistry Department of University of Antwerp, Belgium 2010- present: Research scientist, Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, Kyiv, Ukraine The investigation of the II-VI Photoluminescence and Raman scattering: semiconductors by - investigation of exciton and composition properties of nanostrucrures; - investigation of the inhomogeneous broadening of emission band of CdSe nanoislands; - study of the phonon-exiton interactions under resonance stimulation; - photoluminescence nanostructures. study of defects in CdSe/ZnSe The fabrication of the infrared multielement photodetectors based on CdHgTe The growth of the CdTe and PbTe semiconductor thin films and heterostructures by “hot wall epitaxy” with the use of the different substrates (Si, BaF2, PbTe, CdHgTe etc.) Spectroscopic study of the thin films CdTe and PbTe, investigation of the interface interactions of their components Investigation of heavy doped III-V semiconductors by infrared spectroscopy; Raman measurements of molecular structure of the solid compounds of welding fume; environmental protection and the evaluation of influence of welding fume on the health of humans Characterization of semiconductors by Raman Scattering (DFS24), Micro-Raman Scattering (Renishaw inVia), Photoluminescense, Infrared Spectroscopy („Perkin Elmer” Spectrum BXII), Scanning Electronic Microscopy (FemtoScan), Hot Wall Molecular Epitaxy. PERSONAL SKILLS • working experience in the international groups • performing the research within interdisciplinary scientific area • creative thinking and self motivating, open to the ideas of others • can deal well with critical circumstances LANGUAGES English: good level Deutsch: basic level Nederlands: basic knowledge Russian, Ukrainian: mother languages PARTICIPATION IN INTERNATIONAL & NATIONAL PROJECTS "The properties and environmental risks of atmospheric aerosol particles presently emanating from the Chernobyl power plant": (UA-BOF 2837; 2007-2010) (University of Antwerp, Belgium, Physico-Chemical Institute for the Environmental and Human Protection, Odessa, Ukraine) National Project: “Nanomaterials, nanosystems, nanotechnology”, ref. number: 79/07-H (Kiev, Ukraine) National Project: “Optical and spectroscopic studies of semiconductor materials and structures” ref. number: №0103U000197 (Kiev, Ukraine) AWARDS Grant of National Academy of Sciences of Ukraine for young scientists, 2004 Grant of Kyiv municipality for the talented young scientists, 2007 Grant of President of Ukraine for young scientists, 2008 List of the main cardinal publications: 1. A. Evmenova, V. A. Odarych, M. Vuichyk. Ellipsometric investigation of CdTe films // Optica Applicata –2012. –Vol. 42, No.3. – pp. 667-675. 2. Vuichyk M.V., Rashkovetskyi L.V., Lavoryk S.R., Lytvyn P.M. The processes of selforganization and formation CdZnTe thin films by hot-wall epitaxy // Abstracts of Internation Meeting “Clusters and nanostructured materials (CNM-3)”, Uzhgorod, Ukraine, 14-17 Oktober, 2012. – P. 88. 3. O. Paiuk, A. Stronski, N.V. Vuichyk, A. Gubanova, Ts. Krys’kov, P.F. Oleksenko. Mid-IR impurity absorption in As2S3 chalcogenide glasses doped with transition metals // Semiconductor Physics, Quantum Electronics & Optoelectronics. –2012. – Vol. 15. №2. – P. 152156. 4. Evmenova A.Z., Odarych V.A., Sizov F.F., Vuichyk M.V. CdTe films structure // ХІІI International conference on the Physics and Technology of Thin Films and Nanosystems, 2011, Ivano-Frankivsk, Ukraine, p. 106. 5. M.S. Zayats, P.O. Gentsar, M.V. Vuichyk, I.B. Yanchuk. Influence of Si-doped in optical properties GaN thin films grown on Al2O3 substrates (in Ukr) // Physics and chemistry of solid state, 2010, Vol.11, No1, pp.58-61. 6. M.S. Zayats, V.G. Boiko, P.O. Gentsar, M.V. Vuichyk, O.S. Lytvyn, A.V. Stronski. Optical properties of AlN/n-Si(111) films obtained by method of HF reactive magnetron sputtering // Functional Materials, 2010, Vol. 17, No2, pp. 209-212. 7. F. F. Sizov, Z. F. Tsybrii, M. V. Vuichyk, Ye. O Bilevych., M. V. Apatskaya, I. I. Smoliy, I. O. Lysuk, K. V. Andreeva, N. N. Michailov. Forming of a 128X128 multielement IRphotodetectors based on CdHgTe (in Ukr) // Sensor Electronics and Microsystem Technologies, 2009, No4, pp. 39-43. 8. M. Vuichyk, Z. Tsybrii, K. Svezhentsova Ye. Bilevych and F. Sizov. Atomic Force Microscopy and Infrared Spectroscopy of the PbTe-CdTe Heterosystems Grown by Hot Wall Epitaxy (in Ukr) // Physics and chemistry of solid state, 2009, Vol.10, No 4, P. 784-788. 9. P.O. Gentsar, O.I. Vlasenko, M.V. Vuichyk, O.V. Stronski. Infrared spectroscopy and electroreflectance in the region of fundamental optical transition Е0 of heavily doped n-GaAs (100) // Functional Materials. – 2009. – Vol. 16, №1. – P. 23-28. 10. Vuichyk M.V., Tsybrii Z.F., Bilevych Y.O., Svezhentsova K.V., Sizov F.F. Influence of the thermal activating on forming of low-dimensional structures by the “Hot wall epitaxy” // Abstract of International Conference on chemistry, physic and technology of surface of nanomaterials, 2008, Kyiv, Ukraine, p. 122. 11. Tsybrii Z.F., Vuichyk M.V., Bilevych Ye.O., Apatskaya M.V., Smolii M.I., Anrdreeva E.V., Lysuk I.O. Formation of CdHgTe 128x128 multielement arrays infrared photodetectors // ХX International scientific and technical conference on photoelectronics and night visions devices – Moscow (Russia). – 2008. – P. 122-123. 12. Anna Z. Evmenova, Volodymyr A. Odarych, Fedir F. Sizov, Mykola V. Vuichyk. Absorptive CdTe films optical parameters and film thickness determination by the ellipsometric method // Optica Applicata, 2008, Vol. 38, No.3, pp. 585-600. 13. M. Vuichyk, I. Yanchuk, P. Gentsar, O. Lytvyn, M. Zayats. Raman scattering and infrared spectroscopy of Si-doped GaN thin films // 2008 E-MRS Fall Meeting, 2008, Warsaw, Poland, p. 240. 14. Sizov F.F., Аpatskaya M.V., Bilevych Ye.O., Tsybrii Z.F., Darchuk L.О., Smoliy М.I., Vuichyk M.V. Forming of a multielement photodetector using of thin films technology on CdHgTe // III Ukrainian scientists conference on semiconductor physics, 2007, Odesa, Ukraine, p. 328. 15. M.V. Vuichyk, A. Z. Evmenova, V. A. Odarych, F. F. Sizov. Ellipsometric Investigation of CdTe Films on CdHgTe (in Ukr.) // Physics and chemistry of solid state, 2007, 8, No2, pp.296-300. 16. V. A. Odarych, A. Z. Sarsembaeva, F. F. Sizov, M.V. Vuichyk. Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry //Sem. Phys., Quant. Electr. & Optoelectr., 2006, 9, No1, pp. 55-62. 17. K.N. Kornienko, V.A. Odarych, L.V. Poperenko, N.V. Vuichik. Determination of optical parameters of CdTe films by principal angle ellypsometry // Functional Materials. – 2006. – Vol. 13, №1. – P. 179-182. 18. V. A. Odarych, A. Z. Sarsembaeva, F. F. Sizov, M.V. Vuichyk. Determination of parameters of cadmium telluride films on silicon by the methods of principal angle and multiangle ellipsometry //6th International Young Scientists Conference Problems of Optics and High Technology Material Science “SPO 2005”, 2005, Kyiv: Ukraine. p. 113. 19. F.V. Motsnyi, M.V. Vuychik, O.M. Smolanka, E.Yu. Peresh. Phase transition in Cs3Bi2I9 ferroelastic: investigation by Raman scattering technique // Functional Materials, 2005, 12, No3, pp. 491-496. 20. V. A. Odarych, A. Z. Sarsembaeva, F. F. Sizov, M.V. Vuichyk. Investigation of cadmium telluride films on silicon substrate // Semiconductor Physics, Quantum Electronics & Optoelectronics. –2005. – Vol. 8. №4. – P. 55-59. 21. Ye. Bilevych, A. Soshnikov, L. Darchuk, M. Apatskaya, Z. Tsybrii, M. Vuychik, A. Boka, F. Sizov, O. Boelling, B. Sulkio-Cleff. Influence of substrate materials on the properties of CdTe thin films grown by hot-wall epitaxy //J. Crystal Growth, 2005, 275, pp. e1177-e1181. 22. V.V. Artamonov, A. Baidullaeva, A.I. Vlasenko, N.V. Vuichik, O.S. Litvin, P.E. Mozol and V. V. Strel’chuk. Atomic-force microscopy and Raman scattering studies of laserinduced structural disordering on the p-CdTe surface // Physics of the Solid State, 2004, 46, No8. pp. 1533-1537. 23. M.Ya. Valakh, M.P. Lisitsa, V.V. Strelchuk, M.V. Vuychik, S.V. Ivanov, P.S. Коp'ev, A.A. Toropov, Т.V. Shubina. Exciton recombination near the mobility edge in CdSe/ZnSe nanostructures // 11th International symposium Nanostructures “Physics and Technology”, 2003, St-Petersburg: Russia, P.208-209. 24. V.V. Artamonov, A. Baidullaeva, A.I. Vlasenko, M.V. Vuichyk, P.O. Mozol’, V.V. Strelchuk. Raman scattering and AFM investigation of nanoclusters formated on the surface of pCdTe crystals by pulse laser irradiation // XVI International School-Seminar “Spectroscopy of Molecules and Crystals”, 2003. Sevastopol: Ukraine, P.-103. 25. L.V. Borkovska, M.Ya. Valakh, E. F. Venger, Yu.G. Sadofyev, N.O. Korsunska, V.V. Strelchuk, G.N. Semenova, M.V. Vuychik Investigation of inhomogeneous broadening of CdSe/ZnSe nanoisland photoluminescence band by resonant excitation methods // Physica E, 2003, 17, pp.93-94. 26. M.Ya. Valakh, N.O. Korsunska, Yu.G. Sadofyev, V.V. Strelchuk, G.N. Semenova, L.V. Borkovska, V.V. Artamonov, M.V. Vuychik. Anti-Stokes photoluminescence and structural defects in CdSe/ZnSe nanostructures // Mat. Sci. & Eng. B, 2003, 101, No1-3, pp.255-258. 27. M.Ya. Valakh, M.P. Lisitsa, V.V. Strelchuk, M.V. Vuychik, S.V. Ivanov, A.A. Toropov, T.V. Shubina and P.S. Kop’ev. Excitonic recombination near the mobility edge in CdSe/ZnSe nanostructures // Semiconductors, 2003, 37, No11. pp. 1336-1341. 28. М.Ya. Valakh, V.V. Strelchuk, V.V. Аrtamonov, М.V. Vuichyk, S.V. Іvanov, S.V. Sorokin, Т.V. Shubina. Photoluminescence and Raman spectroscopy of CdSe/ZnSe nanostructures (in Ukr.) // Physichny zbirnyk NTSh., 2002, No 5, pp.140-148. 29. M.Ya. Valakh, Yu.G. Sadofyev, N.O. Korsunska, G.N. Semenova, V.V. Strelchuk, L.V. Borkovska, M.V. Vuychik, M. Sharibaev. Deep-level defects in CdSe/ZnSe QDs and giant antiStokes photoluminescence. Semiconductor Physics, Quantum Electronics & Optoelectronics. V.5 No3 (2002) P.254-257.