第 1 条，共 234 条
标题: Functionalization of monolayer MoS2 by substitutional doping: A first-principles study
作者: Yue, Q (Yue, Qu); Chang, SL (Chang, Shengli); Qin, SQ (Qin, Shiqiao); Li, JB (Li, Jingbo)
来 源 出 版 物 : PHYSICS LETTERS A
卷 : 377
期 : 19-20
页 : 1362-1367
DOI:
10.1016/j.physleta.2013.03.034 出版年: AUG 15 2013
摘 要 : Electron-beam mediated substitutional doping of monolayer MoS2 was recently
demonstrated, opening a new way to modify its properties. Using first-principles calculations, the
structural, electronic and magnetic properties of monolayer MoS2 doped with nonmetal and
transition-metal atoms are investigated. All dopants are strongly bound to the structures,
inducing interesting magnetic behaviors. While all H, B, N and F-doped monolayers have
magnetic moment of 1.0 mu(B), V, Cr, Mn, Fe and Co-doped ones attain 1.0, 4.0, 3.0, 3.0 and 1.0
mu(B), respectively. Additionally, MoS2 undergoes transition from semiconductor to half-metal in
the presence of H, B or Cr doping. (C) 2013 Elsevier B.V. All rights reserved.
语种: English
文献类型: Article
作者关键词: Substitutional doping; Magnetic moment; Half-metal; First-principles calculations
KeyWords Plus: SINGLE-LAYER MOS2; ELECTRONIC-PROPERTIES; BASAL-PLANE; GRAPHENE;
DENSITY; NANORIBBONS; NANOSHEETS; NANOTUBES; COMPLEXES; DIFFUSION
地址: [Yue, Qu; Chang, Shengli; Qin, Shiqiao] Natl Univ Def Technol, Coll Sci, Changsha 410073,
Hunan, Peoples R China.
[Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing
100083, Peoples R China.
通讯作者地址: Li, JB (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice &
Microstruct, Beijing 100083, Peoples R China.
电子邮件地址: jbli@semi.ac.cn
ISSN: 0375-9601
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholar 60925016
National Natural Science Foundation of China (NSFC) 11104347
11104349
Advanced Research Foundation of National University of Defense Technology JC-02-19
J.L. gratefully acknowledges financial support from the National Science Fund for Distinguished
Young Scholar (Grant No. 60925016). This work is supported by the National Natural Science
Foundation of China (NSFC) (Grant No. 11104347 and No. 11104349) and Advanced Research
Foundation of National University of Defense Technology (Grant No. JC-02-19).
-------------------------------------------------------------------------------第 2 条，共 234 条
标题: Photoluminescence properties of porous InP filled with ferroelectric polymers
作者: Jia, CH (Jia, C. H.); Chen, YH (Chen, Y. H.); Jiang, YC (Jiang, Y. C.); Liu, FQ (Liu, F. Q.); Qu, SC
(Qu, S. C.); Zhang, WF (Zhang, W. F.); Wang, ZG (Wang, Z. G.)
来源出版物: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 卷: 111 期: 3 页:
695-699 DOI: 10.1007/s00339-013-7717-0 出版年: JUN 2013
摘要: Photoluminescence properties of porous InP are found to be strongly affected by infilling
ferroelectric polymers. Based on the temperature- and excitation-power-dependent
photoluminescence, the intensity suppression and blue shift of the near-band-edge emission are
supposed to result from the passivation of surface states by introducing ferroelectric polymers.
On the other hand, the significant enhancement of deep-level emission is caused by the
increased concentration of phosphorus vacancies due to ion exchange when infilling the
ferroelectric polymers into porous InP. The surface passivation of porous InP by ferroelectric
polymers is useful for improving the performances of InP-based electronic and optoelectronic
devices.
语种: English
文献类型: Article
KeyWords Plus: FABRICATION; TERPOLYMER; COMPOSITES; MEMORIES; ARRAYS; BAND; GAP
地址: [Jia, C. H.; Zhang, W. F.] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004,
Peoples R China.
[Jia, C. H.; Zhang, W. F.] Henan Univ, Sch Phys & Elect, Kaifeng 475004, Peoples R China.
[Jia, C. H.; Chen, Y. H.; Jiang, Y. C.; Liu, F. Q.; Qu, S. C.; Wang, Z. G.] Chinese Acad Sci, Inst Semicond,
Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: Chen, YH (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
POB 912, Beijing 100083, Peoples R China.
电子邮件地址: yhchen@red.semi.ac.cn
ISSN: 0947-8396
基金资助致谢:
基金资助机构 授权号
973 program 2012CB921304
2012CB619306
National Natural Science Foundation of China 60990313
51202057
This work was supported by the 973 program (2012CB921304 and 2012CB619306) and the
National Natural Science Foundation of China (60990313 and 51202057).
-------------------------------------------------------------------------------第 3 条，共 234 条
标题: Stable p- and n-type doping of few-layer graphene/graphite
作者: Meng, XQ (Meng, Xiuqing); Tongay, S (Tongay, Sefaattin); Kang, J (Kang, Jun); Chen, ZH
(Chen, Zhanghui); Wu, FM (Wu, Fengmin); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Li, JB (Li,
Jingbo); Wu, JQ (Wu, Junqiao)
来源出版物: CARBON 卷: 57 页: 507-514 DOI: 10.1016/j.carbon.2013.02.028 出版年:
JUN 2013
摘要: ZnMg and NbCl5 were intercalated in graphite and the presence of such molecules
between the graphene sheets results in n- and p-type doping, respectively. The doping effect is
confirmed by Hall and Raman measurements and the intercalation process is monitored by
scanning tunneling microscopy. After intercalation the carrier concentration increase almost an
order of magnitude and reaches values as high as 10(19)and 10(18) cm(-3) for p- and n-type
doping, respectively. For higher intercalation times, the intercalated graphite turns back to be as
ordered as pristine one as evidenced by the reduction in the D peak in Raman measurements.
Intercalation compounds show remarkable stability allowing us to permanently tune the physical
properties of few-layer graphite. Our study has provided a new route to produce stable and
functional graphite intercalation compounds and the results can be applied to other graphitic
structures such as few-layer graphene on SiC. (C) 2013 Elsevier Ltd. All rights reserved.
语种: English
文献类型: Article
KeyWords Plus: GRAPHITE-INTERCALATION COMPOUNDS; AUGMENTED-WAVE METHOD;
STABILITY; APPROXIMATION; OPTIMIZATION; GRAPHENE; CARBON; XRD
地址: [Meng, Xiuqing; Wu, Fengmin; Li, Jingbo] Zhejiang Normal Univ, Res Ctr Light Emitting
Diodes LED, Jinhua 321004, Peoples R China.
[Tongay, Sefaattin; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720
USA.
[Kang, Jun; Chen, Zhanghui; Li, Shu-Shen; Xia, Jian-Bai; Li, Jingbo] Chinese Acad Sci, State Key Lab
Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Li, JB (通讯作者),Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua
321004, Peoples R China.
电子邮件地址: jbli@semi.ac.cn
ISSN: 0008-6223
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholar 60925016
National Natural Science Foundation of China 11104250
U.S. Department of Energy Early Career Award DE-FG02-11ER46796
J. Li gratefully acknowledges financial support from the National Science Fund for Distinguished
Young Scholar (Grant No. 60925016) and the National Natural Science Foundation of China (Grant
No. 11104250). This work at UC Berkeley is supported by the U.S. Department of Energy Early
Career Award DE-FG02-11ER46796.
-------------------------------------------------------------------------------第 4 条，共 234 条
标题: A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance
作者: Yu, GH (Yu, Guohao); Cai, Y (Cai, Yong); Wang, Y (Wang, Yue); Dong, ZH (Dong, Zhihua);
Zeng, CH (Zeng, Chunhong); Zhao, DS (Zhao, Desheng); Qin, H (Qin, Hua); Zhang, BS (Zhang,
Baoshun)
来 源 出 版 物 : IEEE ELECTRON DEVICE LETTERS 卷 : 34 期 : 6 页 : 747-749 DOI:
10.1109/LED.2013.2259213 出版年: JUN 2013
摘要: In this letter, a double-gate AlGaN/GaN high electron mobility transistor operated in a
synchronized switching mode is demonstrated, and improved dynamic performances are
obtained. The additional gate sits on top of the conventional gate and stretches 2/4 mu m to the
source/drain electrodes, respectively. A positive voltage pulse is applied to the top gate and is
synchronized with the ON-OFF switching pulse applied to the conventional gate. Such a
double-gate driving method significantly improves the dynamic performances of the device.
Moreover, it allows us to investigate the dynamic ON-resistance in the drift region in detail.
语种: English
文献类型: Article
作者关键词: AlGaN/GaN high electron mobility transistor (HEMT); dynamic performance; power
device
KeyWords Plus: FIELD-EFFECT TRANSISTORS; ON-RESISTANCE; BOOST CONVERTER; VOLTAGE;
POWER; SUBSTRATE; GANHEMT; HFETS
地址: [Yu, Guohao; Cai, Yong; Wang, Yue; Dong, Zhihua; Zeng, Chunhong; Zhao, Desheng; Qin,
Hua; Zhang, Baoshun] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices
& Applicat, Suzhou 215123, Peoples R China.
[Yu, Guohao; Wang, Yue] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.
[Yu, Guohao] Chinese Acad Sci, Inst Semicond, Beijing 10008, Peoples R China.
通讯作者地址: Yu, GH (通讯作者),Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab
Nanodevices & Applicat, Suzhou 215123, Peoples R China.
电子邮件地址: ycai2008@sinano.ac.cn
ISSN: 0741-3106
基金资助致谢:
基金资助机构 授权号
State Key Program of National Natural Science of China 10834004
National Basic Research Program of China (973 Program) G2009CB929300
Jiangsu Science and Technology Support Program BE2012079
Manuscript received March 24, 2013; revised April 12, 2013; accepted April 16, 2013. Date of
publication May 15, 2013; date of current version May 20, 2013. This work was supported in part
by the State Key Program of National Natural Science of China, under Grant 10834004, the
National Basic Research Program of China (973 Program), under Grant G2009CB929300, and
Jiangsu Science and Technology Support Program, under Grant BE2012079. The review of this
letter was arranged by Editor J. A. D. Alamo.
-------------------------------------------------------------------------------第 5 条，共 234 条
标题: 540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using
AlGaAs Barrier
作者: Cui, K (Cui, Kai); Ma, WQ (Ma, Wenquan); Zhang, YH (Zhang, Yanhua); Huang, JL (Huang,
Jianliang); Wei, Y (Wei, Yang); Cao, YL (Cao, Yulian); Guo, XL (Guo, Xiaolu); Li, Q (Li, Qiong)
来 源 出 版 物 : IEEE ELECTRON DEVICE LETTERS 卷 : 34 期 : 6 页 : 759-761 DOI:
10.1109/LED.2013.2258135 出版年: JUN 2013
摘要: We report on a memory structure that only makes use of holes as the storage charges
based on type-II GaSb/GaAs quantum dots (QDs) using an AlGaAs barrier. The C-V measurements
confirm existence of quantum states in the GaSb dots and reveal the applied bias voltage range
for the write/erase process by charging/discharging the QDs. A large hole activation energy value
of 540 meV is obtained for the device measured by deep level transient spectroscopy. Our results
indicate that type-II GaSb/GaAs QD system is a promising candidate for future memory devices.
语种: English
文献类型: Article
作者关键词: Barrier confinement; GaSb/GaAs; quantum dot memory; thermal activation energy
KeyWords Plus: ROOM-TEMPERATURE; SPECTROSCOPY
地址: [Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo,
Xiaolu; Li, Qiong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Cui, K (通讯作者),Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R
China.
电子邮件地址: wqma@semi.ac.cn
ISSN: 0741-3106
基金资助致谢:
基金资助机构 授权号
China's NSF 61176014
61290303
61021003
973 Program 2010CB327602
Manuscript received February 6, 2013; revised March 27, 2013; accepted April 10, 2013. Date of
current version May 20, 2013. This work was supported in part by China's NSF Programs under
Grant 61176014, Grant 61290303, and Grant 61021003, and the 973 Program under Grant
2010CB327602. The review of this letter was arranged by Editor L. Selmi.
-------------------------------------------------------------------------------第 6 条，共 234 条
标题: Tunable Distributed Feedback Quantum Cascade Lasers by a Sampled Bragg Grating
作者: Zhuo, N (Zhuo, Ning); Zhang, JC (Zhang, Jinchuan); Liu, FQ (Liu, Fengqi); Wang, LJ (Wang,
Lijun); Tan, S (Tan, Song); Yan, FL (Yan, Fangliang); Liu, JQ (Liu, Junqi); Wang, ZG (Wang, Zhanguo)
来源出版物: IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 11 页: 1039-1042 DOI:
10.1109/LPT.2013.2257716 出版年: JUN 1 2013
摘要: A novel complex-coupled distributed feedback quantum cascade laser emitting around
lambda similar to 4.7 mu m is demonstrated by a sampled Bragg grating (SBG). The key
superiorities are to utilize the +1st-order (positive first order) transmission of the SBG for laser
single-mode operation, and use conventional holographic exposure combined with the optical
photolithography technology to fabricate the sampled grating, which lead to improved flexibility,
repeatability, and cost-effectiveness. Selective single-mode lasing with a mean side mode
suppression ratio above 20 dB and wavelength coverage range of 87 nm is achieved by changing
the sampling period.
语种: English
文献类型: Article
作者关键词: Quantum cascade lasers; sampled Bragg grating; semiconductor lasers
KeyWords Plus: PERFORMANCE
地址: [Zhuo, Ning; Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Tan, Song; Yan, Fangliang; Liu, Junqi;
Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,
Peoples R China.
[Zhuo, Ning; Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Tan, Song; Yan, Fangliang; Liu, Junqi; Wang,
Zhanguo] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.
通讯作者地址: Zhuo, N (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: zhangjinchuan@semi.ac.cn; fqliu@semi.ac.cn
ISSN: 1041-1135
基金资助致谢:
基金资助机构 授权号
National Research Projects of China 2013CB632801
2013CB632803
2011YQ13001802-04
61274094
10990103
This work was supported in part by the National Research Projects of China under Grants
2013CB632801, 2013CB632803, 2011YQ13001802-04, 61274094, and 10990103.
-------------------------------------------------------------------------------第 7 条，共 234 条
标题: Dislocation Scattering in ZnMgO/ZnO Heterostructures
作者: Sang, L (Sang, Ling); Yang, SY (Yang, Shao Yan); Liu, GP (Liu, Gui Peng); Zhao, GJ (Zhao, Gui
Juan); Liu, CB (Liu, Chang Bo); Gu, CY (Gu, Cheng Yan); Wei, HY (Wei, Hong Yuan); Liu, XL (Liu,
Xiang Lin); Zhu, QS (Zhu, Qin Sheng); Wang, ZG (Wang, Zhan Guo)
来源出版物: IEEE TRANSACTIONS ON ELECTRON DEVICES 卷: 60 期: 6 页: 2077-2079 DOI:
10.1109/TED.2013.2255599 出版年: JUN 2013
摘要: The role of dislocation scattering in electron mobility in ZnMgO/ZnO heterostructures was
studied. It was found that dislocation scattering was dominant in the low-electron concentration
region. The total low-temperature mobility was calculated by considering dislocation scattering
and interface-roughness scattering (IRS) together. The sheet density of dis-locations was chosen
as N-dis = 1.5 x 10(8) cm(-2) and the IRS parameters were Delta = 5.206 and Lambda = 30
angstrom. We obtained a good fit between our calculated results and experimental data reported
in the works referenced.
语种: English
文献类型: Article
作 者 关 键 词 : Dislocation scattering; interface-roughness scattering; mobility; ZnMgO/ZnO
heterostructures
KeyWords Plus: OPTICAL-PROPERTIES; EDGE DISLOCATIONS; ELECTRON-GAS; ZNO; TEMPERATURE;
INTERFACE; FILMS
地址: [Sang, Ling; Yang, Shao Yan; Liu, Gui Peng; Zhao, Gui Juan; Liu, Chang Bo; Gu, Cheng Yan;
Wei, Hong Yuan; Liu, Xiang Lin; Zhu, Qin Sheng; Wang, Zhan Guo] Chinese Acad Sci, Inst Semicond,
Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083,
Peoples R China.
通讯作者地址: Sang, L (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : lingsang@semi.ac.cn; sh-yyang@semi.ac.cn; liugp@semi.ac.cn;
gjzhao@semi.ac.cn; liuchb@semi.ac.cn; chygu@semi.ac.cn; why@semi.ac.cn; xlliu@semi.ac.cn;
qszhu@semi.ac.cn; zgwang@red.semi.ac.cn
ISSN: 0018-9383
基金资助致谢:
基金资助机构 授权号
National Science Foundation of China 60976008
61006004
61076001
10979507
Special Funds for Major State Basic Research Project 973 Program of China A000091109-05
863 High Technology R&D Program of China 2011AA03A101
This work was supported in part by the National Science Foundation of China under Grant
60976008, Grant 61006004, Grant 61076001, and Grant 10979507, the Special Funds for Major
State Basic Research Project 973 Program of China under Grant A000091109-05, and the 863
High Technology R&D Program of China under Grant 2011AA03A101. The review of this paper
was arranged by Editor A. Schenk.
-------------------------------------------------------------------------------第 8 条，共 234 条
标题: Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy
作者: Su, XJ (Su, X. J.); Xu, K (Xu, K.); Ren, GQ (Ren, G. Q.); Wang, JF (Wang, J. F.); Xu, Y (Xu, Y.);
Zeng, XH (Zeng, X. H.); Zhang, JC (Zhang, J. C.); Cai, DM (Cai, D. M.); Zhou, TF (Zhou, T. F.); Liu, ZH
(Liu, Z. H.); Yang, H (Yang, H.)
来 源 出 版 物 : JOURNAL OF CRYSTAL GROWTH
卷 : 372
页 : 43-48
DOI:
10.1016/j.jcrysgro.2013.03.018 出版年: JUN 1 2013
摘要: A detailed study on electrical and optical inhomogeneity in N-face GaN grown by hydride
vapor phase epitaxy is presented. There are two distinctive regions with non-homogeneous
electrical and optical properties in N-face of GaN revealed by wet etching, Raman and
cathodoluminescence. One region exclusively exhibited stronger donor-acceptor pair emission
and higher carrier concentration due to impurity incorporation. A strong red-shift of near band
edge emission of similar to 24 meV was also observed owing to additional carrier concentration.
Furthermore, the activation energy difference of the etching process between the two regions is
similar to 0.12 eV. The distinctive etching topography was probably due to the difference of
surface potentials related to the level of carrier concentration in GaN. (C) 2013 Elsevier B.V. All
rights reserved.
语种: English
文献类型: Article
作者关键词: Defects; Etching; Hydride vapor phase epitaxy; Nitrides
KeyWords Plus: BULK GAN; HVPE; SPECTROSCOPY; CRYSTAL; SI
地址: [Su, X. J.; Xu, K.; Ren, G. Q.; Wang, J. F.; Xu, Y.; Zeng, X. H.; Zhang, J. C.; Cai, D. M.; Zhou, T. F.;
Liu, Z. H.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples
R China.
[Su, X. J.; Xu, K.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Xu, K.; Ren, G. Q.; Wang, J. F.; Xu, Y.; Zhang, J. C.; Cai, D. M.] Suzhou Nanowin Sci & Technol Co
Ltd, Suzhou 215123, Peoples R China.
通讯作者地址: Xu, K (通讯作者),Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou
215123, Peoples R China.
电子邮件地址: kxu2006@sinano.ac.cn
ISSN: 0022-0248
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 50902101
51002179
61274127
National Basic Research Program of China (973 Program) 2007CB936700
This work was partly supported by the National Natural Science Foundation of China (Grant nos.
50902101, 51002179, and 61274127), and the National Basic Research Program of China (973
Program no. 2007CB936700).
-------------------------------------------------------------------------------第 9 条，共 234 条
标题: Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping
作者: Yang, XG (Yang, Xiaoguang); Wang, KF (Wang, Kefan); Gu, YX (Gu, Yongxian); Ni, HQ (Ni,
Haiqiao); Wang, XD (Wang, Xiaodong); Yang, T (Yang, Tao); Wang, ZG (Wang, Zhanguo)
来源出版物: SOLAR ENERGY MATERIALS AND SOLAR CELLS 卷: 113 页: 144-147 DOI:
10.1016/j.solmat.2013.02.005 出版年: JUN 2013
摘要: This paper reports on significantly improved efficiency of InAs/GaAs quantum dot (QD)
solar cells by directly doping Si into InAs QDs during the QD growth. The devices which contain
five stacked QDs in their i-regions were grown using molecular beam epitaxy. It is shown that
using appropriate Si-doing, the open-circuit voltage of the device can be increased to 0.84 V. This
is dramatically higher than the value of 0.67 V obtained in undoped device using the same
structure. Moreover, the efficiency of corresponding device is improved from 11.3% to 17.0%.
This improvement in efficiency is attributed to greatly reduced energy loss in the devices that
results from the reduction of the defect density in the stacked InAs/GaAs QD layers due to the
doping. (C) 2013 Elsevier B.V. All rights reserved.
语种: English
文献类型: Review
作者关键词: Solar cells; Intermediate-band; Quantum dots; Si-doping
KeyWords Plus: BAND SOLAR; MU-M
地址: [Yang, Xiaoguang; Wang, Kefan; Gu, Yongxian; Yang, Tao; Wang, Zhanguo] Chinese Acad Sci,
Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
[Ni, Haiqiao] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing
100083, Peoples R China.
[Wang, Xiaodong] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol,
Beijing 100083, Peoples R China.
通讯作者地址: Yang, T (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: tyang@semi.ac.cn
ISSN: 0927-0248
基金资助致谢:
基金资助机构 授权号
National Science Foundation of China 61204076
61076050
National Basic Research Program of China 2012CB932701
This work is supported by the National Science Foundation of China (Nos. 61204076, 61076050)
and the National Basic Research Program of China (Grant No. 2012CB932701).
-------------------------------------------------------------------------------第 10 条，共 234 条
标题: Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques
作者: Su, XJ (Su, X. J.); Xu, K (Xu, K.); Xu, Y (Xu, Y.); Ren, GQ (Ren, G. Q.); Zhang, JC (Zhang, J. C.);
Wang, JF (Wang, J. F.); Yang, H (Yang, H.)
来源出版物: JOURNAL OF PHYSICS D-APPLIED PHYSICS 卷: 46 期: 20 文献号: 205103 DOI:
10.1088/0022-3727/46/20/205103 出版年: MAY 22 2013
摘要: A study on brittle cracking in GaN films processed by laser lift-off is presented. Two kinds of
cracks were found in the N-polar face of GaN after the laser lift-off process, namely perpendicular
cracks along the {1-1 0 0} planes and lateral cracks along the (0 0 0-1) plane, respectively.
Single-shot laser damage is studied to understand the cracking mechanism. The damage
morphology indicates that the GaN material on the edge of the laser ablation area experiences
three loading modes: shear stress P-S, longitudinal compressive stress P-L and transverse tensile
stress P-T. Under shock P-L, lateral cracks likely appear and extend from the illuminated region
along the interface in mode I. Furthermore, two different kinds of perpendicular cracks were
found, namely shear cracks (PC I) and deflection cracks (PC II). A strong P-S gives rise to PC I while
a cooperative action of P-L and P-T results in PC II. In addition, there exist a critical effective spot
size d(Pth) and a critical ratio of the laser spot size d(L) to the effective spot size d(P), when cracks
occur over them.
语种: English
文献类型: Article
KeyWords Plus: VAPOR-PHASE EPITAXY; RAMAN-SCATTERING; ORGANIC-SOLIDS; THIN-FILMS;
GROWTH; ABLATION; FEMTOSECOND; LAYERS
地址: [Su, X. J.; Xu, K.; Ren, G. Q.; Zhang, J. C.; Wang, J. F.; Yang, H.] Chinese Acad Sci, Suzhou Inst
Nanotech & Nanobion, Suzhou 215123, Peoples R China.
[Yang, H.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Xu, K.; Xu, Y.; Zhang, J. C.; Wang, J. F.; Yang, H.] Suzhou Nanowin Sci & Technol Co Ltd, Suzhou
215123, Peoples R China.
通讯作者地址: Su, XJ (通讯作者),Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou
215123, Peoples R China.
电子邮件地址: kxu2006@sinano.ac.cn
ISSN: 0022-3727
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 50902101
61274127
National Basic Research Program of China (973 Program) 2012CB619305
This work was partly supported by the National Natural Science Foundation of China (Grant Nos
50902101 and 61274127) and the National Basic Research Program of China (973 Program No
2012CB619305).
-------------------------------------------------------------------------------第 11 条，共 234 条
标题: Why twisting angles are diverse in graphene Moire patterns?
作者: Jiang, JW (Jiang, Jin-Wu); Wang, BS (Wang, Bing-Shen); Rabczuk, T (Rabczuk, Timon)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 113 期: 19 文献号: 194304 DOI:
10.1063/1.4805036 出版年: MAY 21 2013
摘要: The interlayer energy of the twisting bilayer graphene is investigated by the molecular
mechanics method using both the registry-dependent potential and the Lennard-Jones potential.
Both potentials show that the interlayer energy is independent of the twisting angle theta, except
in the two boundary regions theta approximate to 0 degrees or 60 degrees, where the interlayer
energy is proportional to the square of the twisting arc length. The calculation results are
successfully interpreted by a single atom model. An important information from our findings is
that, from the energy point of view, there is no preference for the twisting angle in the
experimental bilayer graphene samples, which actually explains the diverse twisting angles in the
experiment. (C) 2013 AIP Publishing LLC.
语种: English
文献类型: Article
KeyWords Plus: SHEAR MODE; LAYERS
地址: [Jiang, Jin-Wu; Rabczuk, Timon] Bauhaus Univ Weimar, Inst Struct Mech, D-99423 Weimar,
Germany.
[Wang, Bing-Shen] Chinese Acad Sci, State Key Lab Semicond Superlattice & Microstruct, Beijing
100083, Peoples R China.
[Wang, Bing-Shen] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Rabczuk, Timon] Korea Univ, Sch Civil Environm & Architectural Engn, Seoul, South Korea.
通讯作者地址: Jiang, JW (通讯作者),Bauhaus Univ Weimar, Inst Struct Mech, Marienstr 15,
D-99423 Weimar, Germany.
电子邮件地址: timon.rabczuk@uni-weimar.de
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
Grant Research Foundation (DFG)
We would like to thank the innominate referee for suggesting the registry-dependent interlayer
potential. The work was supported in part by the Grant Research Foundation (DFG).
-------------------------------------------------------------------------------第 12 条，共 234 条
标题: Sensitive refractive index sensing with good operation angle polarization tolerance using a
plasmonic split-ring resonator array with broken symmetry
作者: Liu, JT (Liu, Jie-Tao); Xu, BZ (Xu, Bin-Zong); Xu, Y (Xu, Yun); Wei, X (Wei, Xin); Song, GF (Song,
Guo-Feng)
来源出版物: JOURNAL OF PHYSICS D-APPLIED PHYSICS 卷: 46 期: 19 文献号: 195104 DOI:
10.1088/0022-3727/46/19/195104 出版年: MAY 15 2013
摘要: A localized plasmon resonance sensor consisting of an asymmetric split-ring resonator array
sustaining highly localized field energy with high refractive index sensitivity and good figure of
merit is demonstrated and investigated. In the proposed 3-cut split-ring resonator structure with
broken symmetry, a highly tunable transmission with a large modulation depth and a narrow
resonance linewidth is obtained, which shows polarization-insensitive and angle-independent
properties. Numerical calculation results show that a high sensitivity of up to 1006 nm/RIU and a
figure of merit of 9.7 can be reached. This plasmonic index sensor is practically obtainable, and is
expected to have potential applications for high-sensitivity convenient and efficient detection.
语种: English
文献类型: Article
KeyWords Plus: METAMATERIAL; RESONANCES; SENSORS
地址: [Liu, Jie-Tao; Xu, Bin-Zong; Xu, Yun; Wei, Xin; Song, Guo-Feng] Chinese Acad Sci, Inst
Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Liu, JT (通讯作者),Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R
China.
电子邮件地址: sgf@semi.ac.cn
ISSN: 0022-3727
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CBA00608
2012CB619203
National Natural Science Foundation of China (NSFC) 61036010
61177070
This work is supported by the National Basic Research Program of China (Grant Nos
2011CBA00608 and 2012CB619203) and the National Natural Science Foundation of China (NSFC)
under Grant Nos 61036010 and 61177070.
-------------------------------------------------------------------------------第 13 条，共 234 条
标题: Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by
metalorganic vapor phase epitaxy
作者: Zhou, K (Zhou, Kun); Liu, JP (Liu, Jianping); Zhang, SM (Zhang, Shuming); Li, ZC (Li,
Zengcheng); Feng, MX (Feng, Meixin); Li, DY (Li, Deyao); Zhang, LQ (Zhang, Liqun); Wang, F (Wang,
Feng); Zhu, JJ (Zhu, Jianjun); Yang, H (Yang, Hui)
来 源 出 版 物 : JOURNAL OF CRYSTAL GROWTH
卷 : 371
页 : 7-10
DOI:
10.1016/j.jcrysgro.2013.01.029 出版年: MAY 15 2013
摘要: Hillocks on c-plane homoepitaxial GaN epilayers were investigated. They were observed on
epilayers grown on [1 (1) over bar 00] direction miscut free-standing GaN substrates with miscut
angle not larger than 0.2 degrees and were absent when substrate miscut angle increased to 0.4
degrees. Atomic force microscopy (AFM) and cathodoluminescence measurements reveal a close
correlation between hillocks and dislocation clusters, while hillocks are absent on layers grown
on GaN substrate free of dislocation clusters. We believe that the hillocks originate from spiral
growth around dislocation clusters. Larger strain induced by dislocation accumulation may be
responsible for the hillock formation around dislocation clusters. (C) 2013 Elsevier B.V. All rights
reserved.
语种: English
文献类型: Article
作者关键词: Surface structure; Metalorganic vapor phase epitaxy; Nitrides; Semiconducting III-V
materials
KeyWords Plus: SURFACE-MORPHOLOGY; FILMS
地址: [Zhou, Kun; Li, Zengcheng; Feng, Meixin; Yang, Hui] Chinese Acad Sci, Inst Semicond, State
Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
[Zhou, Kun; Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun;
Wang, Feng; Zhu, Jianjun; Yang, Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou
215123, Peoples R China.
[Zhou, Kun; Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun;
Wang, Feng; Zhu, Jianjun; Yang, Hui] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou
215123, Peoples R China.
通讯作者地址: Liu, JP (通讯作者),Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou
215123, Peoples R China.
电子邮件地址: jpliu2010@sinano.ac.cn
ISSN: 0022-0248
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60836003
61176126
61076119
This work is supported through National Natural Science Foundation of China (Grant nos.
60836003, 61176126, and 61076119).
-------------------------------------------------------------------------------第 14 条，共 234 条
标题: Tripartite correlations in a Heisenberg XXZ spin ring in thermal equilibrium
作者: Cai, JT (Cai, Jiang-Tao); Abliz, A (Abliz, Ahmad)
来源出版物: PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS 卷: 392 期: 10 页:
2607-2614 DOI: 10.1016/j.physa.2013.01.041 出版年: MAY 15 2013
摘要: Tripartite correlations are investigated at length by various witnesses such as tripartite
negativity, genuine tripartite entanglement, total tripartite correlations and genuine tripartite
correlations. Their behaviors following various tunable system parameters as well as their
connections with quantum phase transitions (QPTs) in a three-qubit Heisenberg XXZ spin ring
with three-spin interaction in thermal equilibrium are discussed. The results show that these
tripartite correlation witnesses can faithfully detect the critical points associated with QPTs at
zero temperature limit in this model. In addition, total tripartite correlations and genuine
tripartite correlations can even signal critical points with respect to anisotropy Delta at finite low
temperatures. (C) 2013 Elsevier B.V. All rights reserved.
语种: English
文献类型: Article
作 者 关 键 词 : Tripartite correlations; Tripartite thermal negativity; Genuine tripartite
entanglement; Heisenberg XXZ model
KeyWords Plus: QUANTUM COMPUTATION; ENTANGLEMENT; SYSTEMS
地址: [Cai, Jiang-Tao] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,
Beijing 100083, Peoples R China.
[Abliz, Ahmad] Xinjiang Normal Univ, Sch Phys & Elect Engn, Urumqi 830054, Peoples R China.
通讯作者地址: Cai, JT (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: jtcai@semi.ac.cn; exmetjan@yahoo.com
ISSN: 0378-4371
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China (973 Program) G2009CB929300
National Natural Science Foundation of China 60821061
Key Subjects of Xinjiang Uyghur Autonomous Region
Key Project of Chinese Ministry of Education 212193
This work was supported by the National Basic Research Program of China (973 Program) Grant
No. G2009CB929300 and the National Natural Science Foundation of China under Grant No.
60821061. AA also acknowledges the Key Subjects of Xinjiang Uyghur Autonomous Region and
Key Project of Chinese Ministry of Education (No. 212193).
-------------------------------------------------------------------------------第 15 条，共 234 条
标题: Surface plasmon resonance sensor based on spectral interferometry: numerical analysis
作者: Zhang, YF (Zhang, Yunfang); Li, H (Li, Hui); Duan, JY (Duan, Jingyuan); Shi, AC (Shi, Ancun);
Liu, YL (Liu, Yuliang)
来源出版物: APPLIED OPTICS 卷: 52 期: 14 页: 3253-3259 DOI: 10.1364/AO.52.003253
出版年: MAY 10 2013
摘要: In this paper, we introduce a numerical simulation of a phase detecting surface plasmon
resonance (SPR) scheme based on spectral interference. Based on the simulation, we propose a
method to optimize various aspects of SPR sensors, which enables better performance in both
measurement range (MR) and sensitivity. In the simulation, four parameters including the
spectrum of the broadband light source, incident angle, Au film thickness, and refractive index of
the prism coupler are analyzed. The results show that it is a good solution for better performance
to use a warm white broadband (625-800 nm) light source, a divergence angle of the collimated
incident light less than 0.02 degrees, and an optimized 48 nm thick Au film when a visible
broadband light source is used. If a near-IR light source is used, however, the Au film thickness
should be somewhat thinner according the specific spectrum. In addition, a wider MR could be
obtained if a prism coupler with higher refractive index is used. With all the parameters
appropriately set, the SPR MR could be extended to 0.55 refractive index units while keeping the
sensitivity at a level of 10(-8). (c) 2013 Optical Society of America
语种: English
文献类型: Article
KeyWords Plus: THIN-FILM; PHASE RETRIEVAL; ENHANCEMENT; BIO
地址: [Zhang, Yunfang; Li, Hui; Duan, Jingyuan; Shi, Ancun; Liu, Yuliang] Chinese Acad Sci, Inst
Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.
通讯作者地址: Duan, JY (通讯作者),Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing
100083, Peoples R China.
电子邮件地址: zhangyf10@semi.ac.cn
ISSN: 1559-128X
基金资助致谢:
基金资助机构 授权号
Science Innovation Foundation 2012 CJT0037
National Natural Science Foundation of China 61177064
This work has been supported by the Science Innovation Foundation through the cooperation
project between Jilin province and CAS (Grant No. 2012 CJT0037) and the National Natural
Science Foundation of China (Grant No. 61177064).
--------------------------------------------------------------------------------
第 16 条，共 234 条
标题: GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge
applications
作者: Li, J (Li, Jie); Guo, H (Guo, Hao); Liu, J (Liu, Jun); Tang, J (Tang, Jun); Ni, HQ (Ni, Haiqiao); Shi,
YB (Shi, Yunbo); Xue, CY (Xue, Chenyang); Niu, ZC (Niu, Zhichuan); Zhang, WD (Zhang, Wendong);
Li, MF (Li, Mifeng); Yu, Y (Yu, Ying)
来 源 出 版 物 : NANOSCALE RESEARCH LETTERS
卷: 8
文 献 号 : 218
DOI:
10.1186/1556-276X-8-218 出版年: MAY 8 2013
摘要: As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has
already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical
properties and high cost, GaAs-based material has been limited in applications as the substrate
for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate.
From the experimental results, it can be concluded that the piezoresistive coefficient achieved
with this method reached 3.42 x 10(-9) m(2)/N, which is about an order of magnitude higher than
the Si-based semiconductor piezoresistors.
语种: English
文献类型: Article
作者关键词: RTD epitaxy on Si; Strain gauge; Highly sensitive; Piezoresistive coefficient
KeyWords Plus: MICROELECTROMECHANICAL SYSTEMS; SENSORS; MEMS; DESIGN
地址: [Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Shi, Yunbo; Xue, Chenyang; Zhang, Wendong] North
Univ China, Minist Educ, Key Lab Instrumentat Sci & Dynam Measurement, Taiyuan 030051,
Shanxi, Peoples R China.
[Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Shi, Yunbo; Xue, Chenyang; Zhang, Wendong] North Univ
China, Sci & Technol Elect Test & Measurement Lab, Taiyuan 030051, Shanxi, Peoples R China.
[Ni, Haiqiao; Niu, Zhichuan; Li, Mifeng; Yu, Ying] Chinese Acad Sci, Inst Semicond, State Key Lab
Superlattices & Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Tang, J (通讯作者),North Univ China, Minist Educ, Key Lab Instrumentat Sci &
Dynam Measurement, Taiyuan 030051, Shanxi, Peoples R China.
电子邮件地址: tangjun@nuc.edu.cn
ISSN: 1931-7573
基金资助致谢:
基金资助机构 授权号
National Science Foundation of China 61171056
51105345
China Postdoctoral Science Foundation 2011M500544
2012T50249
We acknowledge the support from the National Science Foundation of China (61171056,
51105345) and the China Postdoctoral Science Foundation (2011M500544, 2012T50249).
-------------------------------------------------------------------------------第 17 条，共 234 条
标题: Multilayer silver nanoparticles for light trapping in thin film solar cells
作者: Shi, YP (Shi, Yanpeng); Wang, XD (Wang, Xiaodong); Liu, W (Liu, Wen); Yang, TS (Yang,
Tianshu); Xu, R (Xu, Rui); Yang, FH (Yang, Fuhua)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 113 期: 17 文献号: 176101 DOI:
10.1063/1.4803676 出版年: MAY 7 2013
摘要: In this paper, a systematic design and analysis of thin film crystalline silicon solar cells
incorporated with a new style of multilayer silver (Ag) nanoparticles (NPs) array is presented.
Using numerical simulations, we showed that multilayer Ag NPs provide better light trapping than
single layer Ag NPs when the Ag NPs are located on the rear of the solar cell. Furthermore, Ag NP
double layers on the rear achieved the best light absorption enhancement for solar cells. Ag NP
double layers showed a 6.65% increase in intergraded quantum efficiency across the solar
spectrum compared with single layer structures. The parasitic absorption occurring in Ag NP
bottom layers was also discussed. (C) 2013 AIP Publishing LLC.
语种: English
文献类型: Article; Proceedings Paper
KeyWords Plus: SILICON
地址: [Shi, Yanpeng; Wang, Xiaodong; Liu, Wen; Yang, Tianshu; Xu, Rui; Yang, Fuhua] Chinese
Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R
China.
通讯作者地址: Shi, YP (通讯作者),Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond
Integrated Technol, Beijing 100083, Peoples R China.
电子邮件地址: xdwang@semi.ac.cn; fhyang@semi.ac.cn
ISSN: 0021-8979
-------------------------------------------------------------------------------第 18 条，共 234 条
标题: Observation of photo darkening in self assembled InGaAs/GaAs quantum dots
作者: Zhang, HY (Zhang, Hongyi); Chen, YH (Chen, Yonghai); Zhou, XL (Zhou, Xiaolong); Jia, YA (Jia,
Yanan); Ye, XL (Ye, Xiaoling); Xu, B (Xu, Bo); Wang, ZG (Wang, Zhanguo)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 113 期: 17 文献号: 173508 DOI:
10.1063/1.4803683 出版年: MAY 7 2013
摘要: Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The
photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous
laser irradiation. The time constants varied from tens of minutes to several hours, depending on
the applied laser power. Based on the spectral evolution, it was concluded that the observed
phenomenon should originate from laser induced structural damage and a sustained increase of
non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay
dynamics at different laser powers, it is argued that there should exist other processes that
hinder PL degradation at a high laser power. (C) 2013 AIP Publishing LLC.
语种: English
文献类型: Article; Proceedings Paper
KeyWords Plus: FLUORESCENCE INTERMITTENCY; CDSE NANOCRYSTALS; PHOTOLUMINESCENCE;
LUMINESCENCE; BLINKING; STATES; GAAS; INP
地址: [Zhang, Hongyi] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,
Peoples R China.
Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing
100083, Peoples R China.
通讯作者地址: Zhang, HY (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
POB 912, Beijing 100083, Peoples R China.
电子邮件地址: hyzhang@semi.ac.cn
ISSN: 0021-8979
-------------------------------------------------------------------------------第 19 条，共 234 条
标 题 : Multibistability and self-pulsation in nonlinear high-Q silicon microring resonators
considering thermo-optical effect
作者: Zhang, LB (Zhang, Libin); Fei, YH (Fei, Yonghao); Cao, TT (Cao, Tongtong); Cao, YM (Cao,
Yanmei); Xu, QY (Xu, Qingyang); Chen, SW (Chen, Shaowu)
来 源 出 版 物 : PHYSICAL REVIEW A
卷 : 87
期: 5
文 献 号 : 053805
DOI:
10.1103/PhysRevA.87.053805 出版年: MAY 6 2013
摘要: Optical bistability (BI) and self-pulsation (SP) in high-Q silicon microring resonators (MRRs)
induced by thermo-optical (TO) effect and other nonlinear effects are theoretically studied with
coupled mode theory and linear stability analysis method. It is found that the boundaries for
both BI and SP are mainly restricted by two counteracting effects: free carrier dispersion effect
and TO effect. If the refractive index changes of a MRR caused by these two effects are on the
same order of magnitude, the output power will exhibit much more complicated dependence on
the input power and wavelength, namely, input-power-dependent multi-BI and multi-SP regions
will exist at certain input wavelength range. The controllability of multi-BI and multi-SP
phenomena by the input power and input wavelength could be very useful in all-optical
nonlinear devices.
语种: English
文献类型: Article
KeyWords Plus: OPTICAL BISTABILITY; RING RESONATORS; WAVE-GUIDES; MODULATION
地址: [Zhang, Libin; Fei, Yonghao; Cao, Tongtong; Cao, Yanmei; Xu, Qingyang; Chen, Shaowu]
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R
China.
通讯作者地址: Zhang, LB (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: swchen@semi.ac.cn
ISSN: 1050-2947
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60877013
61021003
This work was supported by the National Natural Science Foundation of China (Grants No.
60877013 and No. 61021003).
-------------------------------------------------------------------------------第 20 条，共 234 条
标题: PDECO: Parallel differential evolution for clusters optimization
作者: Chen, ZH (Chen, Zhanghui); Jiang, XW (Jiang, Xiangwei); Li, JB (Li, Jingbo); Li, SS (Li,
Shushen); Wang, LW (Wang, Linwang)
来源出版物: JOURNAL OF COMPUTATIONAL CHEMISTRY 卷: 34 期: 12 页: 1046-1059 DOI:
10.1002/jcc.23235 出版年: MAY 5 2013
摘要: The optimization of the atomic and molecular clusters with a large number of atoms is a
very challenging topic. This article proposes a parallel differential evolution (DE) optimization
scheme for large-scale clusters. It combines a modified DE algorithm with improved genetic
operators and a parallel strategy with a migration operator to address the problems of numerous
local optima and large computational demanding. Results of LennardJones (LJ) clusters and
Gupta-potential Co clusters show the performance of the algorithm surpasses those in previous
researches in terms of successful rate, convergent speed, and global searching ability. The overall
performance for large or challenging LJ clusters is enhanced significantly. The average number of
local minimizations per hit of the global minima for Co clusters is only about 34% of that in
previous methods. Some global optima for Co are also updated. We then apply the algorithm to
optimize the Pt clusters with Gupta potential from the size 3 to 130 and analyze their electronic
properties by density functional theory calculation. The clusters with 13, 38, 54, 75, 108, and 125
atoms are extremely stable and can be taken as the magic numbers for Pt systems. It is
interesting that the more stable structures, especially magic-number ones, tend to have a larger
energy gap between the highest occupied molecular orbital and the lowest unoccupied molecular
orbital. It is also found that the clusters are gradually close to the metal bulk from the size N > 80
and Pt38 is expected to be more active than Pt75 in catalytic reaction. (c) 2013 Wiley Periodicals,
Inc.
语种: English
文献类型: Article
作者关键词: clusters; optimization; parallel differential evolution; platinum
KeyWords Plus: LENNARD-JONES CLUSTERS; LATTICE SEARCHING METHOD; INITIO
MOLECULAR-DYNAMICS; GENETIC ALGORITHM; GLOBAL OPTIMIZATION; STRUCTURAL
OPTIMIZATION; GEOMETRY OPTIMIZATION; PLATINUM CLUSTERS; STRUCTURE PREDICTION;
CONSTRUCTED CORE
地址: [Chen, Zhanghui; Jiang, Xiangwei; Li, Jingbo; Li, Shushen] Chinese Acad Sci, Inst Semicond,
State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
[Wang, Linwang] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720
USA.
通讯作者地址: Chen, ZH (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: jbli@semi.ac.cn
ISSN: 0192-8651
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholar 60925016
National Basic Research Program of China 2011CB921901
National Natural Science Foundation of China 61106091
Office of Science, Office of Basic Energy Sciences, Materials Science and Engineering Division, of
the U.S. Department of Energy (DOE) DEAC02-05CH11231
China Scholarship Council
Contract/grant sponsor: National Science Fund for Distinguished Young Scholar (to J.L.);
Contract/grant numbers: 60925016; Contract/grant sponsor: National Basic Research Program of
China; Contract/grant numbers: 2011CB921901; Contract/grant sponsor: National Natural
Science Foundation of China (X.W.J.); Contract/grant number: 61106091; Contract/grant sponsor:
Director, Office of Science, Office of Basic Energy Sciences, Materials Science and Engineering
Division, of the U.S. Department of Energy (DOE) (to L. W. W.); Contract/grant number:
DEAC02-05CH11231.
Z.H. Chen acknowledges the financial support of China Scholarship Council. We acknowledge the
computing resources provided by the Supercomputing Center, Computer Network Information
Center, Chinese Academy of Sciences.
-------------------------------------------------------------------------------第 21 条，共 234 条
标题: Perpendicularly magnetized MnxGa films: promising materials for future spintronic devices,
magnetic recording and permanent magnets
作者: Zhu, LJ (Zhu, Lijun); Zhao, JH (Zhao, Jianhua)
来源出版物: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 卷: 111 期: 2 页:
379-387 DOI: 10.1007/s00339-013-7608-4 出版年: MAY 2013
摘要: In this article, we review the recent progress in synthesis, characterization and related
spintronic devices of tetragonal MnxGa alloys with L1(0) or D0(22) ordering. After a brief
introduction to the growing demands for perpendicularly magnetized materials and the
prospective candidate of MnxGa, we focus on lattice structures and synthesis of MnxGa bulks,
and epitaxial growth, structural characterization and magnetic properties of MnxGa films. Then
we discuss effective ways to tailor and improve the structure and magnetism for possible
applications in spintronics, magnetic recording and permanent magnets. Finally, we outline the
recent progress in spin polarization, magnetic damping, magneto-optical and magneto-transport
behaviors and thermal and chemical stability of MnxGa films and related spintronic devices like
magnetic tunneling junctions, spin valves and spin injectors into semiconductors.
语种: English
文献类型: Article
KeyWords Plus: EPITAXIAL-GROWTH; DELTA-PHASE; THIN-FILMS; GA ALLOYS; ANISOTROPY; MNGA;
COERCIVITY; GALLIUM
地址: [Zhu, Lijun; Zhao, Jianhua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Zhao, JH (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: jhzhao@red.semi.ac.cn
ISSN: 0947-8396
基金资助致谢:
基金资助机构 授权号
NSFC 11127406
MOST of China 2013CB922303
The authors thank the financial support from the NSFC under Grant No. 11127406 and MOST of
China under Grant No. 2013CB922303.
-------------------------------------------------------------------------------第 22 条，共 234 条
标题: Numerical study of radial temperature distribution in the AlN sublimation growth system
作者: Li, HJ (Li, Huijie); Liu, XL (Liu, Xianglin); Feng, YX (Feng, Yuxia); Wei, HY (Wei, Hongyuan);
Yang, SY (Yang, Shaoyan)
来源出版物: CRYSTAL RESEARCH AND TECHNOLOGY 卷: 48 期: 5 页: 321-327 DOI:
10.1002/crat.201300064 出版年: MAY 2013
摘要: A large radial temperature gradient in the AlN sublimation growth system would lead to
non-uniform growth rate along the radial direction and introduce thermal stress in the as grown
crystal. In this paper, we have numerically studied the radial thermal uniformity in the crucible of
a AlN sublimation growth system. The temperature difference on the source top surface is
insignificant while the radial temperature gradient on the lid surface is too large to be neglected.
The simulation results showed that the crucible material with a large thermal conductivity is
beneficial to obtain a uniform temperature distribution on the lid surface. Moreover, it was found
that the temperature gradient on the lid surface decreases with increased lid thickness and
decreased top window size.
语种: English
文献类型: Article
作者关键词: computer simulation; induction heating
KeyWords Plus: CRYSTAL-GROWTH; SINGLE-CRYSTALS
地址: [Li, Huijie; Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan] Chinese Acad Sci, Inst
Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: Li, HJ (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
POB 912, Beijing 100083, Peoples R China.
电子邮件地址: hjli2009@semi.ac.cn
ISSN: 0232-1300
基金资助致谢:
基金资助机构 授权号
National Science Foundation of China 91233111
11275228
61006004
61076001
60976008
10979507
Special Funds for Major State Basic Research Project(973 program)of China A000091109-05
863 High Technology R&D Program of China 2011AA03A101
This work was supported by National Science Foundation of China (No. 91233111, No. 11275228,
No. 61006004, No. 61076001, No. 60976008, and No. 10979507), and by Special Funds for Major
State Basic Research Project(973 program)of China (No. A000091109-05), and also by the 863
High Technology R&D Program of China (No. 2011AA03A101).
-------------------------------------------------------------------------------第 23 条，共 234 条
标题: Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A
Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS
作者: Gong, X (Gong, Xiao); Han, GQ (Han, Genquan); Liu, B (Liu, Bin); Wang, LX (Wang, Lanxiang);
Wang, W (Wang, Wei); Yang, Y (Yang, Yue); Kong, EYJ (Kong, Eugene Yu-Jin); Su, SJ (Su, Shaojian);
Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Yeo, YC (Yeo, Yee-Chia)
来源出版物: IEEE TRANSACTIONS ON ELECTRON DEVICES 卷: 60 期: 5 页: 1640-1648 DOI:
10.1109/TED.2013.2255057 出版年: MAY 2013
摘 要 : We report a novel common gate-stack solution for In0.7Ga0.3As n-channel
metal-oxide-semiconductor field-effect transistors (nMOSFETs) and Ge0.97Sn0.03 p-channel
metal-oxide-semiconductor field-effect transistors (pMOSFETs), featuring sub-400 degrees C
Si2H6 passivation, sub-1.75-nm capacitance equivalent thickness (CET), and single TaN metal gate.
By incorporating Si2H6 passivation, an ultrathin SiO2/Si interfacial layer is formed between the
high-k gate dielectric and the high mobility InGaAs and GeSn channels. The In0.7Ga0.3As
nMOSFET and Ge0.97Sn0.03 pMOSFET show drive currents of similar to 143 and similar to 69 mu
A/mu m, respectively, at vertical bar VDS vertical bar and vertical bar VGS-VTH vertical bar of 1V
for a gate length L-G of 4 mu m. At an inversion carrier density N-inv of 10(13) cm(-2), In0.7Ga0.3
As nMOSFETs and Ge0.97Sn0.03 pMOSFETs show electron and hole mobilities of similar to 495
and similar to 230 cm(2)/V.s, respectively. At Ninv of 4 x 1012 cm-2, electron and hole mobility
values of similar to 705 and similar to 346 cm(2)/V.s are achieved. Symmetric V-TH is realized by
choosing a metal gate with midgap work function, and CET of less than 1.75nm is demonstrated
with a gate-leakage current density (JG) of less than 10(-4)A/cm(2) at a gate bias of V-TH +/- 1V.
Using this gate-stack, a Ge0.95Sn0.05 pMOSFET with the shortest L-G of 200nm is also realized.
Drive current of similar to 680 mu A/mu m is achieved at V-DS of -1.5V and V-GS - V-TH of -2V,
with peak intrinsic transconductance G(m,int) of similar to 492 mu S/mu m at V-DS of -1.1V.
语种: English
文献类型: Article
作者关键词: GeSn pMOSFET; InGaAs nMOSFET; Si2H6 passivation
KeyWords Plus: HIGH-MOBILITY; GERMANIUM MOSFETS; GE; ENHANCEMENT; SUBSTRATE;
OXIDATION; LAYER; FILMS; FETS
地址: [Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene
Yu-Jin; Yeo, Yee-Chia] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576,
Singapore.
[Su, Shaojian] Huaqiao Univ, Xiamen 361021, Peoples R China.
[Xue, Chunlai; Cheng, Buwen] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Gong, X (通讯作者),Natl Univ Singapore, Dept Elect & Comp Engn, Singapore
117576, Singapore.
电 子 邮 件 地 址 : g0801802@nus.edu.sg; hangenquan@ieee.org; liubin@nus.edu.sg;
lanxiang@nus.edu.sg; elewwei@nus.edu.sg; yue_yang@nus.edu.sg; eugkong@gmail.com;
sushao-jian@hqu.edu.cn; clxue@semi.ac.cn; cbw@semi.ac.cn; yeo@ieee.org
ISSN: 0018-9383
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61177038
61176013
NRF NRF-RF2008-09
The work of C. Xue was supported by the National Natural Science Foundation of China under
Grant 61177038. The work of B. Cheng was supported by the National Natural Science
Foundation of China under Grant 61176013. The work of Y.-C. Yeo was supported by the NRF
under Grant NRF-RF2008-09. The review of this paper was arranged by Editor W. Tsai.
-------------------------------------------------------------------------------第 24 条，共 234 条
标题: Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors
Using an AlN Back Barrier
作者: Kong, X (Kong, Xin); Wei, K (Wei, Ke); Liu, GG (Liu, Guoguo); Liu, XY (Liu, Xinyu); Wang, CM
(Wang, Cuimei); Wang, XL (Wang, Xiaoliang)
来 源 出 版 物 : APPLIED PHYSICS EXPRESS 卷 : 6 期 : 5 文 献 号 : 051201 DOI:
10.7567/APEX.6.051201 出版年: MAY 2013
摘要: An ultrathin AlN layer is inserted between the GaN channel and buffer in the fabrication of
deep-submicrometer AlGaN/GaN high-electron-mobility transistors (HEMTs). The wide bandgap
of AlN establishes a high back barrier and thus enhances the confinement of two-dimensional
electron gas under high drain bias voltages. Owning to the effective suppression of short-channel
effects in the device with a highly scaled gate length, the fabricated AlN back barrier HEMTs show
better pinch-off quality, lower subthreshold current, lower drain-induced barrier lowering factor,
and better high-frequency response than the reference device without an AlN back barrier. (C)
2013 The Japan Society of Applied Physics
语种: English
文献类型: Article
KeyWords
Plus:
FIELD-EFFECT
TRANSISTORS;
MOLECULAR-BEAM
EPITAXY;
DOUBLE-HETEROSTRUCTURE; HEMTS; GAN; DEVICES; LAYER
地址: [Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu] Chinese Acad Sci, Inst Microelect, Microwave
Devices & Integrated Circuits Dept, Beijing 100029, Peoples R China.
[Wang, Cuimei; Wang, Xiaoliang] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R
China.
通讯作者地址: Liu, XY (通讯作者),Chinese Acad Sci, Inst Microelect, Microwave Devices &
Integrated Circuits Dept, Beijing 100029, Peoples R China.
电子邮件地址: xyliu@ime.ac.cn
ISSN: 1882-0778
基金资助致谢:
基金资助机构 授权号
Major Program of the National Natural Science Foundation of China 60890191
National Key Basic Research Program 2010CB327503
This work was supported by the Major Program of the National Natural Science Foundation of
China under Grant No. 60890191 and the National Key Basic Research Program under Grant No.
2010CB327503. In addition, the authors want to express their gratitude to all the colleagues in
the laboratory for fruitful discussion.
-------------------------------------------------------------------------------第 25 条，共 234 条
标题: Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with
Shallow Quantum Well
作者: Li, HJ (Li, Hongjian); Li, PP (Li, Panpan); Kang, JJ (Kang, Junjie); Li, Z (Li, Zhi); Zhang, YY
(Zhang, Yiyun); Li, ZC (Li, Zhicong); Li, J (Li, Jing); Yi, XY (Yi, Xiaoyan); Li, JM (Li, Jinmin); Wang, GH
(Wang, Guohong)
来 源 出 版 物 : APPLIED PHYSICS EXPRESS 卷 : 6 期 : 5 文 献 号 : 052102 DOI:
10.7567/APEX.6.052102 出版年: MAY 2013
摘要: InGaN-based green light-emitting diodes (LEDs) with low-indium-composition shallow
quantum well (SQW) inserted before the InGaN emitting layer are investigated theoretically and
experimentally. Numerical simulation results show an increase of the overlap of electron-hole
wave functions and a reduction of electrostatic field within the active region of the SQW LED,
compared to those of the conventional LED. Photoluminescence (PL) measurements exhibit
reduced full width at half maximum (FWHM) and increased PL intensity for the SQW LED. A
28.9% enhancement of output power at 150 mA for SQW LED chips of 256 x 300 mu m(2) size is
achieved. (c) 2013 The Japan Society of Applied Physics
语种: English
文献类型: Article
地址: [Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Li, Zhicong; Li, Jing; Yi, Xiaoyan;
Li, Jinmin; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr, Beijing
100083, Peoples R China.
[Zhang, Yiyun] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China.
通讯作者地址: Li, HJ (通讯作者),Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr,
Beijing 100083, Peoples R China.
电子邮件地址: semi_lihongjian@126.com
ISSN: 1882-0778
基金资助致谢:
基金资助机构 授权号
National High Technology Program of China 2011AA03A105
2011AA03A103
This work was supported by the National High Technology Program of China (2011AA03A105 and
2011AA03A103).
-------------------------------------------------------------------------------第 26 条，共 234 条
标题: Electron transport in a HgTe quantum spin Hall bar with periodic electric modulations
作者: Lin, LZ (Lin, Liang-Zhong); Cheng, F (Cheng, F.); Zhang, D (Zhang, D.); Lou, WK (Lou,
Wen-Kai); Zhang, LB (Zhang, Le-Bo)
来 源 出 版 物 : SOLID STATE COMMUNICATIONS
卷 : 161
页 : 34-37
DOI:
10.1016/j.ssc.2013.02.023 出版年: MAY 2013
摘要: We theoretically investigate the electron transport through a quantum spin Hall bar in the
presence of periodic potential modulations. We find that the edge states show different
behaviors for the periodic electric potential modulation in the proposed structures. The
backscattering process can be controlled by tuning the electric potential modulation. Crown
Copyright (C) 2013 Published by Elsevier Ltd. All rights reserved.
语种: English
文献类型: Article
作 者 关 键 词 : Topological insulator; Quantum transport; Periodic electric modulations;
Backscattering process
KeyWords Plus: WELLS; STATE
地址: [Lin, Liang-Zhong; Zhang, D.; Lou, Wen-Kai] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing
100083, Peoples R China.
[Cheng, F.] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004, Hunan, Peoples
R China.
[Zhang, Le-Bo] Hunan Normal Univ, Dept Phys, Changsha 410012, Hunan, Peoples R China.
通讯作者地址: Lin, LZ (通讯作者),Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing
100083, Peoples R China.
电子邮件地址: lzlin@semi.ac.cn
ISSN: 0038-1098
基金资助致谢:
基金资助机构 授权号
NSFC 11004017
Scientific Research Fund of Hunan Provincial Education Department 12B010
This work is supported by the NSFC Grant no. 11004017, Scientific Research Fund of Hunan
Provincial Education Department 12B010.
-------------------------------------------------------------------------------第 27 条，共 234 条
标题: Low-Temperature Quantum Transport Characteristics in Single n-Channel Junctionless
Nanowire Transistors
作者: Li, XM (Li, Xiaoming); Han, WH (Han, Weihua); Ma, LH (Ma, Liuhong); Wang, H (Wang, Hao);
Zhang, YB (Zhang, Yanbo); Yang, FH (Yang, Fuhua)
来 源 出 版 物 : IEEE ELECTRON DEVICE LETTERS 卷 : 34 期 : 5 页 : 581-583 DOI:
10.1109/LED.2013.2250898 出版年: MAY 2013
摘要: A single n-channel junctionless nanowire transistor is fabricated and characterized for
low-temperature quantum transport behavior. Transfer characteristics exhibit current oscillations
below flat-band voltage (V-FB) up to temperature 75 K, possibly due to cotunneling through
unintentional quantum dots. Furthermore, regular current steps are observed above VFB, that is,
each current plateau corresponds to a fully populated subband. Experimental result of
transconductance peaks indicates that the subband energy spacing in the 1-D channel agrees well
with theoretical prediction.
语种: English
文献类型: Article
作者关键词: Current oscillation; current step; junctionless nanowire transistor; low temperature;
quantum-confinement effect
KeyWords Plus: TRIGATE SOI MOSFETS
地址: [Li, Xiaoming; Han, Weihua; Ma, Liuhong; Wang, Hao; Zhang, Yanbo; Yang, Fuhua] Chinese
Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R
China.
通讯作者地址: Li, XM (通讯作者),Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond
Integrat Technol, Beijing 100083, Peoples R China.
电子邮件地址: weihua@semi.ac.cn
ISSN: 0741-3106
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2010CB934104
National High Technology Research and Development Program of China 2007AA03Z303
Manuscript received January 4, 2013; revised February 23, 2013; accepted February 23, 2013.
Date of publication March 15, 2013; date of current version April 22, 2013. This work was
supported in part by the National Basic Research Program of China under Grant 2010CB934104
and the National High Technology Research and Development Program of China under Grant
2007AA03Z303. The review of this letter was arranged by Editor E. A. Gutierrez-D.
-------------------------------------------------------------------------------第 28 条，共 234 条
标 题 :
Strained
germanium-tin
(GeSn)
p-channel
metal-oxide-semiconductor
field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
作者: Wang, LX (Wang, Lanxiang); Su, SJ (Su, Shaojian); Wang, W (Wang, Wei); Gong, X (Gong,
Xiao); Yang, Y (Yang, Yue); Guo, PF (Guo, Pengfei); Zhang, GZ (Zhang, Guangze); Xue, CL (Xue,
Chunlai); Cheng, BW (Cheng, Buwen); Han, GQ (Han, Genquan); Yeo, YC (Yeo, Yee-Chia)
来源出版物: SOLID-STATE ELECTRONICS 卷: 83 页: 66-70 DOI: 10.1016/j.sse.2013.01.031
出版年: MAY 2013
摘 要 : High-mobility strained Ge0.958Sn0.042 p-channel metal-oxide-semiconductor
field-effect-transistors (p-MOSFETs) with ammonium sulfide [(NH4)(2)S] surface passivation were
demonstrated. A similar to 10 nm thick fully-strained single crystalline GeSn layer was epitaxially
grown on Ge (1 0 0) substrate as the channel layer. (NH4)(2)S surface passivation was performed
for the GeSn surface, followed by gate stack formation. Ge0.958Sn0.042 p-MOSFETs with
(NH4)(2)S passivation show decent electrical characteristics and a peak effective mobility of 509
cm(2)/V s, which is the highest reported peak mobility obtained for GeSn channel p-MOSFETs so
far. (c) 2013 Elsevier Ltd. All rights reserved.
语种: English
文献类型: Article
作者关键词: High-mobility; Germanium-tin; Surface passivation; Metal-oxide-semiconductor
field-effect transistor (MOSFET)
KeyWords Plus: EXTRACTION METHOD; GATE DIELECTRICS; INTERFACE; TEMPERATURE;
TECHNOLOGY; PMOSFETS; DENSITY
地址: [Wang, Lanxiang; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Han, Genquan; Yeo,
Yee-Chia] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.
[Wang, Lanxiang; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Han, Genquan; Yeo, Yee-Chia]
Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn NGS, Singapore 117576, Singapore.
[Su, Shaojian; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen] Chinese Acad Sci, Inst Semicond,
State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Han, GQ (通讯作者),Natl Univ Singapore, Dept Elect & Comp Engn, 10 Kent Ridge
Crescent, Singapore 119260, Singapore.
电子邮件地址: hangenquan@ieee.org; yeo@ieee.org
ISSN: 0038-1101
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61036003
61176013
61177038
National Research Foundation NRF-RF2008-09
B. Cheng and C. Xue acknowledge support from Grant Nos. 61036003, 61176013, and 61177038,
respectively, from the National Natural Science Foundation of China. Y.-C. Yeo acknowledges
support from the National Research Foundation under Grant NRF-RF2008-09.
-------------------------------------------------------------------------------第 29 条，共 234 条
标题: n-Si-p-Si1-xGex nanowire arrays for thermoelectric power generation
作者: Xu, B (Xu, Bin); Li, CB (Li, Chuanbo); Myronov, M (Myronov, Maksym); Fobelets, K (Fobelets,
Kristel)
来源出版物: SOLID-STATE ELECTRONICS 卷: 83 页: 107-112 DOI: 10.1016/j.sse.2013.01.038
出版年: MAY 2013
摘要: The output power of a discrete assembly of n-Si-p-Si1-xGex (0 <= x <= 0.4) thermoelectric
generators is measured as a function of load resistance. The influence of Ge content and
nanowire structures on the performance of thermoelectric devices is evaluated in measurements
around room temperature. The nanowire arrays are etched using a metal induced local oxidation
and etching process, based on self-assembled Ag nanoparticles and HF. The use of nanowires and
SiGe with dimensions smaller than 30 mu m, is beneficial for an improvement of, at least, a factor
of 10 in the output power. However, better performance improvements can be obtained by
optimising the thermal and electrical contact resistances at the interfaces. Optimisation of the
electrical contact results in a performance boost by a factor of 25. (c) 2013 Elsevier Ltd. All rights
reserved.
语种: English
文献类型: Article
作者关键词: SiGe nanowire array; thermo-electric generator; Si nanowire; Thermoelectricity
KeyWords Plus: SILICON NANOWIRES
地址: [Xu, Bin; Li, Chuanbo; Fobelets, Kristel] Univ London Imperial Coll Sci Technol & Med, Dept
Elect & Elect Engn, London SW7 2AZ, England.
[Li, Chuanbo] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,
Peoples R China.
[Myronov, Maksym] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England.
通讯作者地址: Li, CB (通讯作者),Univ London Imperial Coll Sci Technol & Med, Dept Elect &
Elect Engn, Exhibit Rd, London SW7 2AZ, England.
电子邮件地址: cbli@semi.ac.cn; k.fobelets@imperial.ac.uk
ISSN: 0038-1101
基金资助致谢:
基金资助机构 授权号
e-on International Research Initiative project
This work was financially supported by the e-on International Research Initiative project.
-------------------------------------------------------------------------------第 30 条，共 234 条
标题: Mode analysis for metal-coated nanocavity by three-dimensional S-matrix method
作者: Yao, QF (Yao, Qi-Feng); Huang, YZ (Huang, Yong-Zhen); Yang, YD (Yang, Yue-De); Zou, LX
(Zou, Ling-Xiu); Lv, XM (Lv, Xiao-Meng); Long, H (Long, Heng); Xiao, JL (Xiao, Jin-Long); Guo, CC
(Guo, Chu-Cai)
来源出版物: JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS 卷: 30 期:
5 页: 1335-1341 DOI: 10.1364/JOSAB.30.001335 出版年: MAY 2013
摘 要 : Three-dimensional scattering matrix method is proposed to investigate mode
characteristics for metal-coated nanocavities, with the vertical waveguide structure of an active
region confined by upper and lower cladding layers. For a nanocavity with radius of 800 nm, Q
factors of well-confined modes with wavelength around 1550 nm first decrease with the increase
of the metallic layer thickness due to the metallic absorption and the increase of radiation loss as
the metallic layer thickness is less than 10 nm, and then rise with the increase of the metallic
layer. However, for a weak confined nanocavity with a radius of 500 nm, the mode Q factor
increases with the metallic layer thickness first, reaches a maximum value at an optimal metallic
thickness, then decrease with the further increase of the metallic layer. For nanocavities confined
by a thick metallic layer, the Q factors approach constants limited by the metallic absorption.
However, mode field patterns, including the vertical field distributions, are affected by the
metallic layer, which not only influences the metallic layer absorption but also the optical
confinement factor in the active region. (C) 2013 Optical Society of America
语种: English
文献类型: Article
KeyWords Plus: RESONATORS; CAVITY; LASER
地址: [Yao, Qi-Feng; Huang, Yong-Zhen; Yang, Yue-De; Zou, Ling-Xiu; Lv, Xiao-Meng; Long, Heng;
Xiao, Jin-Long; Guo, Chu-Cai] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,
Beijing 100083, Peoples R China.
通讯作者地址: Huang, YZ (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: yzhuang@semi.ac.cn
ISSN: 0740-3224
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61235004
61006042
61106048
61061160502
61021003
High Technology Development Project 2012AA012202
This work was supported by the National Natural Science Foundation of China under Grants
61235004, 61006042, 61106048, 61061160502, and 61021003, and the High Technology
Development Project under Grant 2012AA012202.
-------------------------------------------------------------------------------第 31 条，共 234 条
标题: The quantification of quantum nonlocality by characteristic function
作者: Wen, W (Wen Wei)
来源出版物: SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 卷: 56 期: 5 页: 947-951
DOI: 10.1007/s11433-013-5045-1 出版年: MAY 2013
摘要: We propose a way to measure the strength of quantum nonlocal correlation (QNC) based
on the characteristic function, which is defined as a response function under the local quantum
measurement in a composite system. It is found that the strength of QNC based on the
characteristic function is a half-positive-definite function and does not change under any LU
operation. Generally, we give a new definition for quantum entanglement using the strength
function. Furthermore, we also give a separability-criterion for 2 x m-dimensional mixed real
matrix. This paper proposes an alternative way for QNC further research.
语种: English
文献类型: Article
作 者 关 键 词 : quantum nonlocality; characteristic function; strength of QNC; quantum
entanglement; Schrodinger steering
KeyWords Plus: PROBABILITY RELATIONS; SEPARATED SYSTEMS; STATES
地址: Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083,
Peoples R China.
通讯作者地址: Wen, W (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, Beijing 100083, Peoples R China.
电子邮件地址: chuxiangzi@semi.ac.cn
ISSN: 1674-7348
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China G2009CB929300
We would like to especially thank Prof. BAI YanKui for useful comments and discussions. This
work was supported by the National Basic Research Program of China (Grant No.
G2009CB929300).
-------------------------------------------------------------------------------第 32 条，共 234 条
标题: Carrier-Induced Silicon Bragg Grating Filters With a p-i-n Junction
作者: Fang, Q (Fang, Qing); Song, JF (Song, Jun Feng); Tu, XG (Tu, Xiaoguang); Jia, LX (Jia, Lianxi);
Luo, XS (Luo, Xianshu); Yu, MB (Yu, Mingbin); Lo, GQ (Lo, Guo Qiang)
来源出版物: IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 9 页: 810-812 DOI:
10.1109/LPT.2013.2252611 出版年: MAY 1 2013
摘要: In this letter, we present a carrier-induced silicon waveguide Bragg grating filter with a p-i-n
junction. The carrier-induced Bragg grating is formed on the rib silicon waveguide by ion
implantation technology. The bandwidth and the extinction ratio of the filter are 0.3 nm and 14
dB, respectively. It can be tuned by both forward and reverse biases. The central wavelength
shifting rates under forward and reverse biases are 1.35 and 0.52 pm/V, respectively. The
extinction ratio can also be tuned. At the forward bias of 1.5 V, the extinction ratio is reduced
from 14 to 5 dB.
语种: English
文献类型: Article
作者关键词: Bragg grating filter; carrier-induced; ion implantation; p-i-n junction; silicon
photonics
KeyWords Plus: RIB WAVE-GUIDES
地址: [Fang, Qing; Song, Jun Feng; Tu, Xiaoguang; Jia, Lianxi; Luo, Xianshu; Yu, Mingbin; Lo, Guo
Qiang] Agcy Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore.
[Fang, Qing; Tu, Xiaoguang; Jia, Lianxi; Luo, Xianshu; Yu, Mingbin; Lo, Guo Qiang] Chinese Acad Sci,
Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.
[Song, Jun Feng] Jilin Univ, Coll Elect Sci & Engn, Changchun 100015, Jilin, Peoples R China.
通讯作者地址: Fang, Q (通讯作者),Agcy Sci Technol & Res, Inst Microelect, Singapore 117685,
Singapore.
电 子 邮 件 地 址 : fangq@ime.a-star.edu.sg; Songjf@ime.a-star.edu.sg; tux@ime.a-star.edu.sg;
jialx@ime.a-star.edu.sg;
luox@ime.a-star.edu.sg;
mingbin@ime.a-star.edu.sg;
logq@ime.a-star.edu.sg
ISSN: 1041-1135
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61177064
Singapore A*STAR SERC 1122804038
Manuscript received December 26, 2012; revised March 3, 2013; accepted March 5, 2013. Date
of publication March 18, 2013; date of current version April 9, 2013. This work was supported in
part by the National Natural Science Foundation of China under Grant 61177064 and Singapore
A*STAR SERC under Grant 1122804038.
-------------------------------------------------------------------------------第 33 条，共 234 条
标题: Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs
作者: Zhan, T (Zhan, Teng); Zhang, Y (Zhang, Yang); Ma, J (Ma, Jun); Tian, T (Tian, Ting); Li, J (Li,
Jing); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan); Guo, JX (Guo, Jinxia); Wang, GH (Wang, Guohong);
Li, JM (Li, Jinmin)
来源出版物: IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 9 页: 844-847 DOI:
10.1109/LPT.2013.2251878 出版年: MAY 1 2013
摘要: In this letter, GaN-based high-voltage light-emitting diodes (HV-LEDs) arrays with 16
microchips connected in series are fabricated. The light output power-current-voltage (LOP-I-V)
characteristic of HV-LEDs is measured. Under input power of 1.1 W, the LOP of HV-LEDs is
enhanced by 11.9% compared to traditional high power light-emitting diodes (THP-LEDs) with the
same chip size. Due to the reduced metal shadow effect and better current spread, the HV-LEDs
exhibit higher light extraction efficiency under the same current density, which is simulated by a
3-D ray tracing method. As a result, the luminous efficiency of HV-LEDs is 21.6% higher than that
of THP-LEDs under input power of 1.1 W. Furthermore, the efficiency droop of HV-LEDs is reduced
to half of that of THP-LEDs.
语种: English
文献类型: Article
作者关键词: Array; efficiency droop; GaN; high-voltage (HV); light emitting diodes (LEDs)
KeyWords Plus: LIGHT-EMITTING DIODE; EFFICIENCY; DROOP; CHIP
地址: [Zhan, Teng; Zhang, Yang; Ma, Jun; Tian, Ting; Li, Jing; Liu, Zhiqiang; Yi, Xiaoyan; Guo, Jinxia;
Wang, Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res &
Dev Ctr, Beijing 100083, Peoples R China.
通讯作者地址: Zhan, T (通讯作者),Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol
Res & Dev Ctr, Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : zhanteng10@semi.ac.cn; zhangy@semi.ac.cn; majun@semi.ac.cn;
tianting@semi.ac.cn;
lijing2006@semi.ac.cn;
lzq@semi.ac.cn;
guojinxia@semi.ac.cn; ghwang@red.semi.ac.cn; jmli@red.semi.ac.cn
ISSN: 1041-1135
spring@semi.ac.cn;
基金资助致谢:
基金资助机构 授权号
National High Technology Research and Development of China 2011AA03A105
2011AA03A108
This work was supported in part by the National High Technology Research and Development of
China under Grant 2011AA03A105 and Grant 2011AA03A108.
-------------------------------------------------------------------------------第 34 条，共 234 条
标题: High Efficiency Broadband Polarization Converter Based on Tapered Slot Waveguide
作者: Fei, YH (Fei, Yonghao); Zhang, LB (Zhang, Libin); Cao, TT (Cao, Tongtong); Cao, YM (Cao,
Yanmei); Chen, SW (Chen, Shaowu)
来源出版物: IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 9 页: 879-881 DOI:
10.1109/LPT.2013.2254706 出版年: MAY 1 2013
摘要: A novel high efficiency broadband polarization converter based on an adiabatic tapered
vertical slot waveguide is proposed and analyzed. Unlike previously reported tapered polarization
converters, this device converts the first-order TM/TE mode into the first-order TE/TM mode. The
structure utilizes a vertical slot waveguide, which only needs a one-mask etching process. The
bandwidth is ultrawide, similar to 100 nm (1500-1600 nm) with a conversion efficiency of > 98%.
The total length of the polarization converter is 116 mu m, and its minimum fabrication tolerance
is acceptable for modern nanofabrication technology.
语种: English
文献类型: Article
作者关键词: Optical interconnects; photonic integrated circuits; polarization converter; slot
waveguide
KeyWords Plus: DIRECTIONAL COUPLER; SPLITTER; LITHOGRAPHY; ROTATOR
地址: [Fei, Yonghao; Zhang, Libin; Cao, Tongtong; Cao, Yanmei; Chen, Shaowu] Chinese Acad Sci,
State Key Lab Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Fei, YH (通讯作者),Chinese Acad Sci, State Key Lab Optoelect, Inst Semicond,
Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : feiyonghao@semi.ac.cn; zhanglibin@semi.ac.cn;
ymeicao@semi.ac.cn; swchen@semi.ac.cn
ISSN: 1041-1135
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60877013
61021003
ttcao@semi.ac.cn;
This work was supported by the National Natural Science Foundation of China under Grant
60877013 and Grant 61021003.
-------------------------------------------------------------------------------第 35 条，共 234 条
标题: Surface plasmon resonance enhanced ellipsometric analysis for monitoring of cobalt
electrochemical reaction in solution
作者: Wang, ZZ (Wang, Zhenzhen); Liu, W (Liu, Wei); Wang, CX (Wang, Chunxia); Kan, Q (Kan,
Qiang); Chen, S (Chen, She); Chen, HD (Chen, Hongda)
来 源 出 版 物 : SENSORS AND ACTUATORS B-CHEMICAL 卷 : 181 页 : 221-226 DOI:
10.1016/j.snb.2013.01.044 出版年: MAY 2013
摘要: Cobalt-based ion selective electrode (ISE) is one of the key methods for phosphate
detection. In this paper, surface plasmon resonance (SPR) enhanced ellipsometric analysis
method has been used to monitor the electrochemical reaction process at Co ISE sensor surface
and the mass consumption of sensitive electrode membranes. An Au-Co bilayer film is designed
as optical detection interface. In order to obtain detectable reflection intensity variation with Co
thickness, Au film and Co film thickness are optimized at TM polarization state. According to the
calculation results, 50 nm Au film is formed on glass substrate by electron beam evaporation.
Then cobalt film with thickness of about 20 nm is grown on gold film by electrochemical
deposition method. Ellipsometric measurements were performed at SPR angle 59. The
consuming process of Co film reacting with dissolved oxygen in deionized water has been
obtained by monitoring the change of reflection intensity. (C) 2013 Elsevier B.V. All rights
reserved.
语种: English
文献类型: Article
作者关键词: Surface plasmon resonance; Ellipsometry; Ion selective electrode; Image contrast
KeyWords Plus: PHOSPHATE; SENSOR; MEMBRANES; ELECTRODE
地址: [Wang, Zhenzhen; Wang, Chunxia; Kan, Qiang; Chen, Hongda] Chinese Acad Sci, Inst
Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
[Wang, Zhenzhen] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.
[Liu, Wei; Chen, She] Chinese Acad Sci, Inst Mech, Dept Natl Micrograv Lab, Beijing 100083,
Peoples R China.
通讯作者地址: Wang, CX (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: cxwang@semi.ac.cn
ISSN: 0925-4005
基金资助致谢:
基金资助机构 授权号
National Basic Research of China 2009CB320300
2010CB934104
2011CB933203
2011CB933102
Nation Natural Foundation of China 61036009
60978067
This work was supported by the National Basic Research of China (nos. 2009CB320300,
2010CB934104, 2011CB933203 and 2011CB933102) and the Nation Natural Foundation of China
(Grant nos. 61036009 and 60978067).
-------------------------------------------------------------------------------第 36 条，共 234 条
标 题 : Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double
heterojunction high-electron mobility transistors
作者: Ji, D (Ji, Dong); Lu, YW (Lu, Yanwu); Liu, B (Liu, Bing); Liu, GP (Liu, Guipeng); Zhu, QS (Zhu,
Qinsheng); Wang, ZG (Wang, Zhanguo)
来源出版物: THIN SOLID FILMS 卷: 534 页: 655-658 DOI: 10.1016/j.tsf.2013.03.028 出版
年: MAY 1 2013
摘要: The two-dimensional electron gas (2DEG) mobility limited by dielectric and barrier
thickness fluctuations (TF) scattering in Al2O3/AlGaN/GaN double heterojunction high-electron
mobility transistors (HEMTs) is calculated. Calculation shows that thickness fluctuation scattering
is the main limitation in Al2O3/AlGaN/GaN double heterojunction HEMTs with thin Al2O3 layer
thicknesses. In addition, a study of 2DEG mobility as a function of 2DEG density, n(s), shows that
TF scattering acts as the main limitation when ns exceeds 2 x 10(12) cm(-2). The results may be
used to design HEMTs to obtain higher 2DEG mobilities by modulating the dielectric layer and
barrier thicknesses or 2DEG density. (C) 2013 Elsevier B. V. All rights reserved.
语种: English
文献类型: Article
作者关键词: Gallium nitride; Double heterojunctions; 2DEG; Thickness fluctuation; High electron
mobility transistor
KeyWords Plus: ATOMIC-LAYER-DEPOSITION; ALGAN/GAN HEMTS; SURFACE PASSIVATION;
THIN-FILMS; AL2O3; POWER; HETEROSTRUCTURES; SEMICONDUCTORS; SC2O3; MGO
地址: [Ji, Dong; Lu, Yanwu; Liu, Bing] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R
China.
[Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Beijing 100083,
Peoples R China.
通讯作者地址: Lu, YW (通讯作者),Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R
China.
电子邮件地址: ywlu@bjtu.edu.cn
ISSN: 0040-6090
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60976070
Fundamental Research Funds for the Central Universities of China 2011JBZ013
Excellent Science and Technology Innovation Program of Beijing Jiaotong University, China
This work is a project supported by the National Natural Science Foundation of China (Grant No.
60976070) and the Fundamental Research Funds for the Central Universities of China (Grant No.
2011JBZ013). One of the authors (Ji D) would like to acknowledge financial support from the
Excellent Science and Technology Innovation Program of Beijing Jiaotong University, China.
-------------------------------------------------------------------------------第 37 条，共 234 条
标题: Strain Field Mapping of Dislocations in a Ge/Si Heterostructure
作者: Liu, QL (Liu, Quanlong); Zhao, CW (Zhao, Chunwang); Su, SJ (Su, Shaojian); Li, JJ (Li, Jijun);
Xing, YM (Xing, Yongming); Cheng, BW (Cheng, Buwen)
来源出版物: PLOS ONE 卷: 8 期: 4 文献号: e62672 DOI: 10.1371/journal.pone.0062672
出版年: APR 23 2013
摘要: Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by
using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the
Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron
microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90 degrees
full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The
only defect found in the Ge epitaxial film was a 60 degrees dislocation. The nanoscale strain field
of the dislocations was mapped by geometric phase analysis technique from the HRTEM image.
The strain field around the edge component of the 60 degrees dislocation core was compared
with those of the Peierls-Nabarro and Foreman dislocation models. Comparison results show that
the Foreman model with a = 1.5 can describe appropriately the strain field around the edge
component of a 60 degrees dislocation core in a relaxed Ge film on a Si substrate.
语种: English
文献类型: Article
KeyWords Plus: GE FILMS; DISPLACEMENT; MODEL; EPITAXY; GROWTH
地址: [Liu, Quanlong; Zhao, Chunwang; Li, Jijun; Xing, Yongming] Inner Mongolia Univ Technol,
Coll Sci, Hohhot, Peoples R China.
[Su, Shaojian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen, Peoples R China.
[Cheng, Buwen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing,
Peoples R China.
通讯作者地址: Zhao, CW (通讯作者),Inner Mongolia Univ Technol, Coll Sci, Hohhot, Peoples R
China.
电子邮件地址: zhaocw@imut.edu.cn
ISSN: 1932-6203
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 11062008
11272142
61036003
Program for New Century Excellent Talents in University NCET-10-0909
Scientific Research Foundation for the Returned Overseas Chinese Scholars of State Education
Ministry
This work was supported by the National Natural Science Foundation of China Nos. 11062008,
11272142 and 61036003. This work was also supported by the Program for New Century
Excellent Talents in University No. NCET-10-0909, the Scientific Research Foundation for the
Returned Overseas Chinese Scholars of State Education Ministry. The funders had no role in study
design, data collection and analysis, decision to publish, or preparation of the manuscript.
-------------------------------------------------------------------------------第 38 条，共 234 条
标题: Strain-driven synthesis of self-catalyzed branched GaAs nanowires
作者: Zha, GW (Zha, Guowei); Li, MF (Li, Mifeng); Yu, Y (Yu, Ying); Wang, LJ (Wang, Lijuan); Xu, JX
(Xu, Jianxing); Shang, XJ (Shang, Xiangjun); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 16 文 献 号 : 163115 DOI:
10.1063/1.4803028 出版年: APR 22 2013
摘要: We report the strain-driven synthesis of self-catalyzed branched GaAs nanowires (NWs).
Decoration of facets with branches is achieved as NWs elongate or with the insertion of InAs. The
hemisphere tip shaped branches on the backbone implies identical Vapor-Liquid-Solid growth
mechanism. We present the homogeneous gallium-droplets (GDs) nucleation on the GaAs {110}
side facets in the form of GaAs quantum-rings, specifying the role of GDs in branching. Structural
characterization revealed strain defects at the crotch between the backbones and branches of the
NWs. The evolution mechanism of self-catalyzed branched NWs is discussed and finally
nano-trees with hyper-branches are demonstrated. (C) 2013 AIP Publishing LLC
[http://dx.doi.org/10.1063/1.4803028]
语种: English
文献类型: Article
KeyWords Plus: RATIONAL GROWTH; HETEROSTRUCTURES; NETWORKS; ARRAYS
地址: [Zha, Guowei; Li, Mifeng; Yu, Ying; Wang, Lijuan; Xu, Jianxing; Shang, Xiangjun; Ni, Haiqiao;
Niu, Zhichuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing
100083, Peoples R China.
通讯作者地址: Niu, ZC (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: zcniu@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Key Basic Research Program of China 2013CB933304
2010CB327601
2012CB932701
National Natural Science Foundation of China 90921015
61176012
Strategic Priority Research Program (B) of the Chinese Academy of Sciences XDB01010200
We thank Dr. Dan Su, Haiyang Wang, Xuefei Wu, Shuang Yang, Baoquan Sun for their
experimental support. This work is supported by National Key Basic Research Program of China
(Grant Nos. 2013CB933304, 2010CB327601, 2012CB932701), and the National Natural Science
Foundation of China (Grant Nos. 90921015, 61176012), and Strategic Priority Research Program
(B) of the Chinese Academy of Sciences (Grant No. XDB01010200).
-------------------------------------------------------------------------------第 39 条，共 234 条
标题: Anomalous electron trajectory in topological insulators
作者: Shi, LK (Shi, Li-kun); Zhang, SC (Zhang, Shou-cheng); Chang, K (Chang, Kai)
来 源 出 版 物 : PHYSICAL REVIEW B
卷 : 87
期 : 16
文 献 号 : 161115
DOI:
10.1103/PhysRevB.87.161115 出版年: APR 22 2013
摘要: We present a general theory about electron orbital motions in topological insulators. An
in-plane electric field drives spin-up and spin-down electrons bending to opposite directions, and
skipping orbital motions, a counterpart of the integer quantum Hall effect, are formed near the
boundary of the sample. The accompanying Zitterbewegung can be found and controlled by
tuning external electric fields. Ultrafast flipping electron spin leads to a quantum side jump in the
topological insulator, and a snake-orbit motion in two-dimensional electron gas with spin-orbit
interactions. This feature provides a way to control electron orbital motion by manipulating
electron spin. DOI: 10.1103/PhysRevB.87.161115
语种: English
文献类型: Article
KeyWords Plus: HGTE QUANTUM-WELLS; ZITTERBEWEGUNG; PHASE
地址: [Shi, Li-kun; Chang, Kai] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R
China.
[Zhang, Shou-cheng] Stanford Univ, Dept Phys, Stanford, CA 94305 USA.
通讯作者地址: Shi, LK (通讯作者),Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing
100083, Peoples R China.
电子邮件地址: kchang@semi.ac.cn
ISSN: 1098-0121
基金资助致谢:
基金资助机构 授权号
NSFC 10934007
MOST of China 2011CB922204
DARPA
This work was supported by the NSFC Grants No. 10934007 and No. 2011CB922204 from the
MOST of China. S.C.Z. is supported by the DARPA Program on Topological Insulators.
-------------------------------------------------------------------------------第 40 条，共 234 条
标题: High power buried sampled grating distributed feedback quantum cascade lasers
作者: Zhang, JC (Zhang, J. C.); Liu, FQ (Liu, F. Q.); Yao, DY (Yao, D. Y.); Zhuo, N (Zhuo, N.); Wang, LJ
(Wang, L. J.); Liu, JQ (Liu, J. Q.); Wang, ZG (Wang, Z. G.)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 113 期: 15 文献号: 153101 DOI:
10.1063/1.4801906 出版年: APR 21 2013
摘要: A novel index-coupled distributed feedback quantum cascade laser emitting at lambda
similar to 4.8 mu m is demonstrated by a sampled grating. The coupling coefficient can be almost
controlled arbitrarily according to the duty cycle of sampled grating. The additional supermodes
caused by the sampled grating can be strongly suppressed by choosing a small sampling period,
so that the supermodes are shifted apart from the gain curve. Single-mode emission without any
significant disadvantages compared with uniform grating is achieved. Especially, this powerful
approach presented here can be applied to achieve the performance with high power and low
threshold simultaneously. (C) 2013 AIP Publishing LLC
语种: English
文献类型: Article
KeyWords Plus: WAVE
地址: [Zhang, J. C.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,
Peoples R China.
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.
通讯作者地址: Zhang, JC (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: fqliu@semi.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
National Research Projects of China 2013CB632801
2013CB632803
2011YQ13001802-04
61274094
10990103
This work was supported by the National Research Projects of China (Grant Nos. 2013CB632801,
2013CB632803, 2011YQ13001802-04, 61274094, and 10990103).
-------------------------------------------------------------------------------第 41 条，共 234 条
标题: Spin transport and accumulation in the persistent photoconductor Al0.3Ga0.7As
作者: Misuraca, J (Misuraca, Jennifer); Kim, JI (Kim, Joon-Il); Lu, J (Lu, Jun); Meng, KK (Meng,
Kangkang); Chen, L (Chen, Lin); Yu, XZ (Yu, Xuezhe); Zhao, JH (Zhao, Jianhua); Xiong, P (Xiong,
Peng); von Molnar, S (von Molnar, Stephan)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 15 文 献 号 : 152408 DOI:
10.1063/1.4802259 出版年: APR 15 2013
摘要: Electrical spin transport and accumulation have been measured in highly Si doped
Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the
tuning of the effective carrier density of the channel material in situ via photodoping. Hanle
effect measurements are completed at various carrier densities, and the measurements yield spin
lifetimes on the order of nanoseconds, an order of magnitude smaller than in bulk GaAs. These
measurements illustrate that this methodology can be used to obtain a detailed description of
how spin lifetimes depend on carrier density in semiconductors across the metal-insulator
transition. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802259]
语种: English
文献类型: Article
KeyWords Plus: INJECTION; SEMICONDUCTORS; SILICON; GAAS
地址: [Misuraca, Jennifer; Kim, Joon-Il; Xiong, Peng; von Molnar, Stephan] Florida State Univ,
Dept Phys, Tallahassee, FL 32306 USA.
[Lu, Jun; Meng, Kangkang; Chen, Lin; Yu, Xuezhe; Zhao, Jianhua] Chinese Acad Sci, Inst Semicond,
State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Misuraca, J (通讯作者),Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA.
电子邮件地址: jm05h@my.fsu.edu
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
NSF DMR-0908625
NSFC 10920101071
The authors would like to thank Xiaohua Lou and Paul Crowell for useful discussions and Gian
Salis and David Awschalom for providing optical spin lifetime characterization of AlGaAs prior to
publication. This work has been supported by NSF under Grant No. DMR-0908625 and by NSFC
under Grant No. 10920101071.
-------------------------------------------------------------------------------第 42 条，共 234 条
标题: Perpendicularly magnetized tau-MnAl (001) thin films epitaxied on GaAs
作者: Nie, SH (Nie, S. H.); Zhu, LJ (Zhu, L. J.); Lu, J (Lu, J.); Pan, D (Pan, D.); Wang, HL (Wang, H. L.);
Yu, XZ (Yu, X. Z.); Xiao, JX (Xiao, J. X.); Zhao, JH (Zhao, J. H.)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 15 文 献 号 : 152405 DOI:
10.1063/1.4801932 出版年: APR 15 2013
摘 要 : Perpendicularly magnetized s-MnAl films have been epitaxied on GaAs (001) by
molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly
dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization
of 361.4 emu/cm(3), perpendicular magnetic anisotropy constant of 13.65 Merg/cm(3), and
magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make
MnAl films valuable as excellent and cost-effective alternative for not only high density
perpendicular magnetic recording storage and spintronics devices but also permanent magnets.
(C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4801932]
语种: English
文献类型: Article
KeyWords Plus: MAGNETOCRYSTALLINE ANISOTROPY; AL; TEMPERATURE; ENERGY
地址: [Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.] Chinese
Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R
China.
通讯作者地址: Zhao, JH (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: jhzhao@red.semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
NSFC 11127406
MOST of China 2013CB922303
We would like to thank W. Wen and S. Yan at Shanghai Synchrotron Radiation and Q. Cai at
Beijing Synchrotron Radiation for their help on XRD measurement. This work was supported
partly by the NSFC under Grant No. 11127406 and MOST of China under Grant No.
2013CB922303.
-------------------------------------------------------------------------------第 43 条，共 234 条
标 题 : PEDOT/MWCNT composite film coated microelectrode arrays for neural interface
improvement
作者: Chen, SY (Chen, Sanyuan); Pei, WH (Pei, Weihua); Gui, Q (Gui, Qiang); Tang, RY (Tang,
Rongyu); Chen, YF (Chen, Yuanfang); Zhao, SS (Zhao, Shanshan); Wang, H (Wang, Huan); Chen, HD
(Chen, Hongda)
来 源 出 版 物 : SENSORS AND ACTUATORS A-PHYSICAL 卷 : 193 页 : 141-148 DOI:
10.1016/j.sna.2013.01.033 出版年: APR 15 2013
摘要: High-performance electrode materials play a crucial role at the interface of implantable
neural electrode. To realize bidirectional transduction between neural tissue and neural
microelectrodes, the electrode material must satisfy the function of stimulating and recording. As
the number and density of electrode increase, tiny electrodes with high performance are needed
in future bioengineering study. In this study, a method of electrochemically co-deposited
poly(3,4-ethylenedioxythiophene)/multi-walled carbon nanotube (PEDOT/MWCNT) onto
microelectrode arrays with 8 channels was investigated. After modification, the impedance,
charge transfer ability and frequency response characteristic were improved simultaneously.
Compared with bare golden electrode, the coated microelectrodes with a surface area of 615 mu
m(2) exhibited a particularly high safe charge injection limit of 7.74 mC/cm(2) and low impedance
of 12 k Omega at 1 kHz. In vivo inferior colliculus implantation of rats revealed that the composite
film coated microelectrodes showed higher signal to noise ratio recordings >15 dB compared to 6
dB SNR of bare gold microelectrodes. (C) 2013 Elsevier B.V. All rights reserved.
语种: English
文献类型: Article
作者关键词: Microelectrode arrays; PEDOT/MWCNT; Electrodeposition; Charge injection limit;
Neural interface
KeyWords Plus: CONDUCTING-POLYMER NANOTUBES; CARBON NANOTUBE; RECORDING
ELECTRODES; STIMULATION; MONOLAYER; ENSEMBLES; ADHESION
地址: [Chen, Sanyuan; Pei, Weihua; Gui, Qiang; Tang, Rongyu; Chen, Yuanfang; Zhao, Shanshan;
Wang, Huan; Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,
Beijing 100083, Peoples R China.
通讯作者地址: Pei, WH (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: peiwh@semi.ac.cn
ISSN: 0924-4247
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CB933203
2011CB933102
National 863 Plans Projects 2012AA030608
Grand Science and Technology Special Project 2011YQ04008204
National Natural Science Foundation of China 31070965
61036002
60976026
61076023
61178082
61078074
We thank Mr. Xiaolei Fang of Tsinghua University for helping with the animal surgery, and Wenbo
Tang for instrumentation. This study was supported by the National Basic Research Program of
China (Grant Nos. 2011CB933203 and 2011CB933102), National 863 Plans Projects (Grant No.
2012AA030608), Grand Science and Technology Special Project (Grant No. 2011YQ04008204) and
National Natural Science Foundation of China (Grant Nos. 31070965, 61036002, 60976026,
61076023, 61178082 and 61078074).
-------------------------------------------------------------------------------第 44 条，共 234 条
标题: Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band
bowing
作者: Kang, J (Kang, Jun); Tongay, S (Tongay, Sefaattin); Li, JB (Li, Jingbo); Wu, JQ (Wu, Junqiao)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 113 期: 14 文献号: 143703 DOI:
10.1063/1.4799126 出版年: APR 14 2013
摘要: The stability and band bowing effects of two-dimensional transition metal dichalcogenide
alloys MX2(1-x)X'(2x) (M = Mo, W, and X, X' = S, Se, Te) are investigated by employing the cluster
expansion method and the special quasi-random structure approach. It is shown that for (S, Se)
alloys, there exist stable ordered alloy structures with concentration x equal to 1/3, 1/2, and 2/3,
which can be explained by the small lattice mismatch between the constituents and a large
additional charge exchange, while no ordered configuration exists for (Se, Te) and (S, Te) alloys at
0K. The calculated phase diagrams indicate that complete miscibility in the alloys can be achieved
at moderate temperatures. The bowing in lattice constant for the alloys is quite small, while the
bowing in band gap, and more so in band edge positions, is much more significant. By
decomposing the formation of alloy into multiple steps, it is found that the band bowing is the
joint effect of volume deformation, chemical difference, and a low-dimensionality enhanced
structure relaxation. The direct band gaps in these alloys continuously tunable from 1.8 eV to 1.0
eV, along with the moderate miscibility temperatures, make them good candidates for
two-dimensional
optoelectronics.
(C)
2013
American
Institute
of
Physics.
[http://dx.doi.org/10.1063/1.4799126]
语种: English
文献类型: Article
KeyWords Plus: SINGLE-LAYER MOS2; AUGMENTED-WAVE METHOD; ELECTRONIC-PROPERTIES;
1ST-PRINCIPLES CALCULATION; OPTICAL BOWINGS; OFFSETS; FILMS
地址: [Kang, Jun; Tongay, Sefaattin; Li, Jingbo; Wu, Junqiao] Chinese Acad Sci, Inst Semicond,
State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
[Kang, Jun; Wu, Junqiao] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley,
CA 94720 USA.
[Tongay, Sefaattin; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720
USA.
通讯作者地址: Kang, J (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: jbli@semi.ac.cn; wuj@berkeley.edu
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholar 60925016
National Basic Research Program of China 2011CB921901
External Cooperation Program of Chinese Academy of Sciences
J. Li gratefully acknowledges financial support from the National Science Fund for Distinguished
Young Scholar (Grant No. 60925016). This work was supported by the National Basic Research
Program of China (Grant No. 2011CB921901) and the External Cooperation Program of Chinese
Academy of Sciences. We acknowledge the computing resources provided by the
Supercomputing Center, CNIC, CAS.
-------------------------------------------------------------------------------第 45 条，共 234 条
标题: Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt
growth
作者: Wen, JJ (Wen, Juanjuan); Liu, Z (Liu, Zhi); Li, LL (Li, Leliang); Li, C (Li, Chong); Xue, CL (Xue,
Chunlai); Zuo, YH (Zuo, Yuhua); Li, CB (Li, Chuanbo); Wang, QM (Wang, Qiming); Cheng, BW
(Cheng, Buwen)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 113 期: 14 文献号: 143107 DOI:
10.1063/1.4801805 出版年: APR 14 2013
摘要: Room temperature photoluminescence (PL) was observed along 50 mu m long Ge strips on
insulator on bulk Si substrates fabricated by rapid melt growth. The PL peaks evidently exhibited a
redshift from the origin to the end of the Ge strip because of the shrinkage of the direct bandgap
of Ge. Moreover, PL intensities increased along the direction of lateral epitaxial growth primarily
because of the decrease in the energy difference between the direct and indirect gaps of Ge. The
change in the Ge band structure, which facilitated changes in PL peaks and intensities, was found
to have resulted from the variation of tensile strain ratios and Si fractions along Ge strips.
Furthermore, the PL intensity at the end of the strip was one magnitude higher than that of bulk
Ge, which indicates the high quality of Ge-on-insulator structures. (C) 2013 AIP Publishing LLC
[http://dx.doi.org/10.1063/1.4801805]
语种: English
文献类型: Article
KeyWords Plus: LIQUID-PHASE EPITAXY; GERMANIUM; GAP; SI; ALLOYS; HETEROSTRUCTURES;
SOURCE/DRAIN; SUBSTRATE; MOBILITY
地址: [Wen, Juanjuan; Liu, Zhi; Li, Leliang; Li, Chong; Xue, Chunlai; Zuo, Yuhua; Li, Chuanbo; Wang,
Qiming; Cheng, Buwen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,
Beijing 100083, Peoples R China.
通讯作者地址: Wen, JJ (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: cbw@semi.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
Major State Basic Research Development Program of China 2013CB632103
2011CBA00608
National Natural Science Foundation of China 61036003
61176013
61177038
The authors would like to thank Professor Y. L. Liu of Institute of Physics Chinese Academy of
Sciences for assistance with the micro-Raman measurement. This work was supported in part by
the Major State Basic Research Development Program of China (Grant Nos. 2013CB632103 and
2011CBA00608) and National Natural Science Foundation of China (Grant Nos. 61036003,
61176013, and 61177038).
-------------------------------------------------------------------------------第 46 条，共 234 条
标题: Multi-channel DFB laser array fabricated by SAG with optimized epitaxy conditions
作者: Zhang, C (Zhang, Can); Liang, S (Liang, Song); Ma, L (Ma, Li); Han, LS (Han, Liangshun); Zhu,
HL (Zhu, Hongliang)
来 源 出 版 物 : CHINESE OPTICS LETTERS 卷 : 11 期 : 4 文 献 号 : 041401 DOI:
10.3788/COL201311.041401 出版年: APR 10 2013
摘要: Selective area growth (SAG) is performed to fabricate monolithically integrated distributed
feedback (DFB) laser array by adjusting the width of a SiO2 mask. A strain-compensated-barrier
structure is adopted to reduce the accumulated strain and improve the quality of multi-quantum
well materials. Varying the strip width of the SAG masks, the DFB laser array with an average
channel spacing of 1.47 nm is demonstrated by a conventional holographic method with
constant-pitch grating. The threshold current from 14 to 18 mA and over 35-dB side mode
suppression ratio (SMSR) are obtained for all DFB lasers in the array.
语种: English
文献类型: Article
KeyWords Plus: PHOTONIC INTEGRATED-CIRCUITS; EFFECTIVE-INDEX METHOD; MODULATOR
地址: [Zhang, Can; Liang, Song; Ma, Li; Han, Liangshun; Zhu, Hongliang] Chinese Acad Sci, Inst
Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China.
通讯作者地址: Liang, S (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat,
Beijing 100083, Peoples R China.
电子邮件地址: liangsong@semi.ac.cn
ISSN: 1671-7694
基金资助致谢:
基金资助机构 授权号
National "863" Project of China 2011AA010303
2012AA012203
National Natural Science Foundation of China 61021003
61090392
National "973" Program of China 2011CB301702
This work was supported by the National "863" Project of China (Nos. 2011AA010303 and
2012AA012203), the National Natural Science Foundation of China (Nos. 61021003 and
61090392), and the National "973" Program of China (No. 2011CB301702).
-------------------------------------------------------------------------------第 47 条，共 234 条
标题: Wavelength evolution of long-period fiber gratings in a water environment
作者: Zhao, Q (Zhao, Qiang); Qu, Y (Qu, Yi); Wang, YJ (Wang, Yong-Jie); Li, F (Li, Fang)
来源出版物: APPLIED OPTICS 卷: 52 期: 11 页: 2478-2483 DOI: 10.1364/AO.52.002478
出版年: APR 10 2013
摘要: In a water environment, wavelength evolution behavior of long-period fiber gratings (LPFGs)
written in H-2-loaded fibers after annealing is studied. The phenomena that wavelength shifts in
the longer wavelength direction and then in the shorter wavelength direction is observed. A shift
of the grating resonance peak (LP05) of as much as 2.5 nm is found. A water-mediated model that
water molecules induce the second diffusion of the remaining H-2 in the fiber and a
diffusion-reaction mechanism that water molecules penetrate into fiber internal structures are
proposed and are combined to explain the wavelength evolution process. Both the calculated
balance point time according to the model, and the qualitative analysis according to the
mechanism, correspond well with the experimental results. This research indicates that
wavelength variation has to be considered or prevented when H-2-loaded LPFGs are used in a
water environment. (C) 2013 Optical Society of America
语种: English
文献类型: Article
KeyWords Plus: LOADED OPTICAL-FIBER; BRAGG GRATINGS; UV INSCRIPTION; SILICA GLASS;
DIFFUSION; HYDROGEN; GROWTH
地址: [Zhao, Qiang; Qu, Yi] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond
Lasers, Changchun 130022, Jilin, Peoples R China.
[Zhao, Qiang; Wang, Yong-Jie; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab,
Beijing 100083, Peoples R China.
通讯作者地址: Zhao, Q (通讯作者),Changchun Univ Sci & Technol, Natl Key Lab High Power
Semicond Lasers, Changchun 130022, Jilin, Peoples R China.
电子邮件地址: zqhero9494@163.com; quyi@cust.edu.cn
ISSN: 1559-128X
-------------------------------------------------------------------------------第 48 条，共 234 条
标 题 : Hierarchical silicon nanowires-carbon textiles matrix as a binder-free anode for
high-performance advanced lithium-ion batteries
作者: Liu, B (Liu, Bin); Wang, XF (Wang, Xianfu); Chen, HT (Chen, Haitian); Wang, ZR (Wang,
Zhuoran); Chen, D (Chen, Di); Cheng, YB (Cheng, Yi-Bing); Zhou, CW (Zhou, Chongwu); Shen, GZ
(Shen, Guozhen)
来源出版物: SCIENTIFIC REPORTS 卷: 3 文献号: 1622 DOI: 10.1038/srep01622 出版年:
APR 9 2013
摘要: Toward the increasing demands of portable energy storage and electric vehicle applications,
the widely used graphite anodes with significant drawbacks become more and more unsuitable.
Herein, we report a novel scaffold of hierarchical silicon nanowires-carbon textiles anodes
fabricated via a facile method. Further, complete lithium-ion batteries based on Si and
commercial LiCoO2 materials were assembled to investigate their corresponding
across-the-aboard performances, demonstrating their enhanced specific capacity (2950 mAh g(-1)
at 0.2 C), good repeatability/ rate capability (even >900 mAh g(-1) at high rate of 5 C), long cycling
life, and excellent stability in various external conditions (curvature, temperature, and humidity).
Above results light the way to principally replacing graphite anodes with silicon-based electrodes
which was confirmed to have better comprehensive performances.
语种: English
文献类型: Article
KeyWords Plus: ENERGY-STORAGE; RECHARGEABLE BATTERIES; CRYSTALLINE; ELECTRODES;
DEVICES; CATHODE; SPACE
地址: [Liu, Bin; Wang, Xianfu; Wang, Zhuoran; Chen, Di; Shen, Guozhen] Huazhong Univ Sci &
Technol, WNLO, Wuhan 430074, Peoples R China.
[Liu, Bin; Wang, Xianfu; Wang, Zhuoran; Chen, Di; Shen, Guozhen] Huazhong Univ Sci & Technol,
Coll Opt & Elect Informat, Wuhan 430074, Peoples R China.
[Cheng, Yi-Bing] Monash Univ, Fac Engn, Clayton, Vic 3800, Australia.
[Chen, Haitian; Zhou, Chongwu] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA.
[Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,
Beijing 100083, Peoples R China.
通讯作者地址: Zhou, CW (通讯作者),Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA.
电子邮件地址: chongwuz@usc.edu; gzshen@semi.ac.cn
ISSN: 2045-2322
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation 51002059
21001046
91123008
973 Program of China 2011CB933300
Program for New Century Excellent Talents of the University in China NCET-11-0179
Natural Science Foundation of Hubei Province 2011CDB035
This work was supported by the National Natural Science Foundation (51002059, 21001046,
91123008), the 973 Program of China (2011CB933300), the Program for New Century Excellent
Talents of the University in China (grant no. NCET-11-0179) and the Natural Science Foundation of
Hubei Province (2011CDB035). Special thanks to the Analytical and Testing Center of HUST and
the Center of Micro-Fabrication and Characterization (CMFC) of WNLO for using their facilities.
-------------------------------------------------------------------------------第 49 条，共 234 条
标题: High-responsivity GeSn short-wave infrared p-i-n photodetectors
作者: Zhang, DL (Zhang, Dongliang); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Su, SJ (Su,
Shaojian); Liu, Z (Liu, Zhi); Zhang, X (Zhang, Xu); Zhang, GZ (Zhang, Guangze); Li, CB (Li, Chuanbo);
Wang, QM (Wang, Qiming)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 14 文 献 号 : 141111 DOI:
10.1063/1.4801957 出版年: APR 8 2013
摘要: Surface-illuminated GeSn p-i-n photodetectors (PDs) with Ge0.964Sn0.036 active layer on
Ge substrate were fabricated. Photodetection up to 1.95 mu m is achieved with a responsivity of
0.13 A/W. High responsivities of 0.56 and 0.71 A/W were achieved under a reverse bias voltage of
3V at 1640 and 1790 nm, respectively. A low dark current of 1.08 mu A was obtained at a reverse
bias of 1V with a diameter of 150 mu m, which corresponds to a current density of 6.1mA/cm(2).
This value is among the lowest dark current densities reported among GeSn PDs. (C) 2013 AIP
Publishing LLC
语种: English
文献类型: Article
KeyWords Plus: HIGH-PERFORMANCE; SILICON; PHOTODIODES
地址: [Zhang, Dongliang; Xue, Chunlai; Cheng, Buwen; Liu, Zhi; Zhang, Xu; Zhang, Guangze; Li,
Chuanbo; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,
Beijing 100083, Peoples R China.
[Su, Shaojian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Fujian Province, Peoples R
China.
通讯作者地址: Xue, CL (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: clxue@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
Major State Basic Research Development Program of China 2013CB632103
2011CBA00608
National High-Technology Research and Development Program of China 2012AA012202
2011AA010302
National Natural Science Foundation 61177038
61176013
The authors thank Fan Ji-Hong for the accurate spectral responsivity measurements. This work
was supported in part by the Major State Basic Research Development Program of China (Grant
Nos. 2013CB632103 and 2011CBA00608), the National High-Technology Research and
Development Program of China (Grant Nos. 2012AA012202 and 2011AA010302), and in part by
the National Natural Science Foundation (Grant Nos. 61177038 and 61176013).
-------------------------------------------------------------------------------第 50 条，共 234 条
标题: Lateral cavity photonic crystal surface emitting laser based on commercial epitaxial wafer
作者: Wang, YF (Wang, Yufei); Qu, HW (Qu, Hongwei); Zhou, WJ (Zhou, Wenjun); Qi, AY (Qi, Aiyi);
Zhang, JX (Zhang, Jianxin); Liu, L (Liu, Lei); Zheng, WH (Zheng, Wanhua)
来源出版物: OPTICS EXPRESS 卷: 21 期: 7 页: 8844-8855 DOI: 10.1364/OE.21.008844
出版年: APR 8 2013
摘要: A lateral cavity photonic crystal surface emitting laser (LC-PCSEL) with airholes of cone-like
shape etched near to the active layer is fabricated. It employs only a simple commercial epitaxial
wafer without DBR and needs no wafer bonding technique. Surface emitting lasing action at 1575
nm with power of 1.8 mW is observed at room temperature, providing potential values for mass
production of electrically driven PCSELs with low cost. Additionally, Fano resonance is utilized to
analyze aperture equivalence of PC, and energy distribution in simplified laser structure is
simulated to show oscillation and transmission characteristics of laser. (c) 2013 Optical Society of
America
语种: English
文献类型: Article
KeyWords Plus: ULTRALOW-THRESHOLD
地址: [Wang, Yufei; Qu, Hongwei; Zhou, Wenjun; Qi, Aiyi; Zhang, Jianxin; Liu, Lei; Zheng, Wanhua]
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R
China.
通讯作者地址: Wang, YF (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: whzheng@semi.ac.cn
ISSN: 1094-4087
基金资助致谢:
基金资助机构 授权号
Chinese National Key Basic Research Special Fund/CNKBRSF 2012CB933501
2011CB922002
National Natural Science Foundation of China 61025025
61274070
61021003
61234004
61205043
61137003
60838003
National High Technology Research and Development Program of China 2012AA012202
2013AA030501
This work is supported by the Chinese National Key Basic Research Special Fund/CNKBRSF (Grant
Nos. 2012CB933501 and 2011CB922002), the National Natural Science Foundation of China
(Grant Nos. 61025025, 61274070, 61021003, 61234004, 61205043, 61137003 and 60838003) and
the National High Technology Research and Development Program of China (Grant Nos.
2012AA012202 and 2013AA030501).
-------------------------------------------------------------------------------第 51 条，共 234 条
标题: Anomalous Raman spectra and thickness-dependent electronic properties of WSe2
作者: Sahin, H (Sahin, H.); Tongay, S (Tongay, S.); Horzum, S (Horzum, S.); Fan, W (Fan, W.); Zhou, J
(Zhou, J.); Li, J (Li, J.); Wu, J (Wu, J.); Peeters, FM (Peeters, F. M.)
来 源 出 版 物 : PHYSICAL REVIEW B
卷 : 87
期 : 16
文 献 号 : 165409
DOI:
10.1103/PhysRevB.87.165409 出版年: APR 5 2013
摘要: Typical Raman spectra of transition-metal dichalcogenides (TMDs) display two prominent
peaks, E-2g and A(1g), that are well separated from each other. We find that these modes are
degenerate in bulk WSe2 yielding one single Raman peak in contrast to other TMDs. As the
dimensionality is lowered, the observed peak splits in two. In contrast, our ab initio calculations
predict that the degeneracy is retained even for WSe2 monolayers. Interestingly, for minuscule
biaxial strain, the degeneracy is preserved, but once the crystal symmetry is broken by a small
uniaxial strain, the degeneracy is lifted. Our calculated phonon dispersion for uniaxially strained
WSe2 shows a good match to the measured Raman spectrum, which suggests that uniaxial strain
exists in WSe2 flakes, possibly induced during the sample preparation and/or as a result of the
interaction between WSe2 and the substrate. Furthermore, we find that WSe2 undergoes an
indirect-to-direct band-gap transition from bulk to monolayers, which is ubiquitous for
semiconducting TMDs. These results not only allow us to understand the vibrational and
electronic properties of WSe2, but also point to effects of the interaction between the monolayer
TMDs and the substrate on the vibrational and electronic properties. DOI:
10.1103/PhysRevB.87.165409
语种: English
文献类型: Article
KeyWords Plus: GRAPHENE; MOS2
地址: [Sahin, H.; Horzum, S.; Peeters, F. M.] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium.
[Tongay, S.; Fan, W.; Zhou, J.; Wu, J.] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720
USA.
[Horzum, S.] Ankara Univ, Dept Engn Phys, Fac Engn, TR-06100 Ankara, Turkey.
[Li, J.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Wu, J.] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.
通讯作者地址: Sahin, H (通讯作者),Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020
Antwerp, Belgium.
电子邮件地址: hasan.sahin@ua.ac.be; tongay@berkeley.edu
ISSN: 1098-0121
基金资助致谢:
基金资助机构 授权号
Flemish Science Foundation (FWO-Vl)
Methusalem programme of the Flemish government
FWO Pegasus Marie Curie Long Fellowship program
This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem
programme of the Flemish government. Computational resources were partially provided by
TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). H. S.
is supported by the FWO Pegasus Marie Curie Long Fellowship program.
-------------------------------------------------------------------------------第 52 条，共 234 条
标题: Optical anisotropy and blue-shift phenomenon in tetragonal BiFeO3
作者: Dong, HF (Dong, Huafeng); Liu, HF (Liu, Hongfei); Wang, SY (Wang, Shanying)
来源出版物: JOURNAL OF PHYSICS D-APPLIED PHYSICS 卷: 46 期: 13 文献号: 135102 DOI:
10.1088/0022-3727/46/13/135102 出版年: APR 3 2013
摘要: We study the uniaxial optical anisotropy of tetragonal BiFeO3 using first-principles
density-functional theory and the Heyd-Scuseria-Ernzerhof hybrid functional in the near infrared
to near ultraviolet range, and compare the results with related experiment and theory. It is found
that the dielectric function is overall blue shifted compared with that of rhombohedral BiFeO3,
and the charge transfer excitations are similar to 0.3 eV higher than those of the rhombohedral
counterpart, which is caused by the symmetry breaking of FeO6 octahedral. Furthermore, it is a
negative uniaxial crystal and shows significant birefringence.
语种: English
文献类型: Article
KeyWords Plus: THIN-FILM; POLARIZATION; PHASE
地址: [Dong, Huafeng; Wang, Shanying] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R
China.
[Dong, Huafeng; Liu, Hongfei] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Dong, HF (通讯作者),Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.
电子邮件地址: hfdong@semi.ac.cn; sywang@mail.tsinghua.edu.cn
ISSN: 0022-3727
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 11174173
This work was supported by the National Natural Science Foundation of China (Grant No
11174173).
-------------------------------------------------------------------------------第 53 条，共 234 条
标题: A Chirped Subwavelength Grating With Both Reflection and Transmission Focusing
作者: Lv, XM (Lv, Xiaomin); Qiu, WB (Qiu, Weibin); Wang, JX (Wang, Jia-Xian); Ma, YH (Ma, Yuhui);
Zhao, J (Zhao, Jing); Li, MK (Li, Mengke); Yu, HY (Yu, Hongyan); Pan, JQ (Pan, Jiaoqing)
来 源 出 版 物 : IEEE PHOTONICS JOURNAL 卷 : 5 期 : 2 文 献 号 : 2200907 DOI:
10.1109/JPHOT.2013.2252333 出版年: APR 2013
摘要: A planar lens composed of a chirped subwavelength grating (CSG) structure with high
numerical aperture (NA) was designed and analyzed in this paper. The reflectivity, transmission,
and phase were calibrated as a function of the grating dimension using rigorous coupled wave
analysis, while the focusing properties were numerically simulated by finite-element method. The
designed CSG focused the reflected and transmitted waves that have approximately the same
power ratios simultaneously. Numerical aperture values of the planar lens as high as 0.91 and
0.92 were obtained for normal incidence of TM and TE polarization light, respectively.
语种: English
文献类型: Article
作者关键词: Subwavelength; grating; double focusing
KeyWords Plus: MICRO-FRESNEL LENSES; SEMICONDUCTOR-LASER; WAVE-GUIDE; MIRROR;
COUPLER
地址: [Lv, Xiaomin; Qiu, Weibin; Wang, Jia-Xian; Ma, Yuhui; Zhao, Jing] Huaqiao Univ, Coll
Informat Sci & Engn, Xiamen 361021, Peoples R China.
[Li, Mengke; Yu, Hongyan; Pan, Jiaoqing] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples
R China.
通讯作者地址: Qiu, WB (通讯作者),Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021,
Peoples R China.
电子邮件地址: wbqiu@hqu.edu.cn; wangjx@hqu.edu.cn
ISSN: 1943-0655
基金资助致谢:
基金资助机构 授权号
National Science and Technology Major Project 2011ZX02708
National 863 2012AA012203
Opened Fund of the State Key Laboratory on Integrated Optoelectronics IOSKL2012KF12
Natural Science Foundation of Fujian 2012J01277
This work was supported in part by the National Science and Technology Major Project under
Grant 2011ZX02708, by the National 863 under Grant 2012AA012203, by the Opened Fund of the
State Key Laboratory on Integrated Optoelectronics under Grant IOSKL2012KF12, and by the
Natural Science Foundation of Fujian under Grant 2012J01277. Corresponding authors: W. Qiu
and J.-X. Wang (e-mail: wbqiu@hqu.edu.cn; wangjx@hqu.edu.cn).
-------------------------------------------------------------------------------第 54 条，共 234 条
标题: Photonic Generation of Chirp-Free Phase-Coded Microwave With Accurate pi Phase Shift
and Large Continuous Operating Bandwidth
作者: Wang, H (Wang, Hui); Zheng, JY (Zheng, Jianyu); Wang, LX (Wang, Lixian); Liu, JG (Liu,
Jianguo); Xie, L (Xie, Liang); Zhu, NH (Zhu, Ninghua)
来 源 出 版 物 : IEEE PHOTONICS JOURNAL 卷 : 5 期 : 2 文 献 号 : 5500306 DOI:
10.1109/JPHOT.2013.2248706 出版年: APR 2013
摘要: This paper presents a novel approach to generate a binary phase-coded microwave signal
with accurate pi phase shift and large continuous operating bandwidth. In the system, the
phase-coding modulation with an accurate pi phase shift has been realized by the joint use of two
cascaded polarization modulators (PolMs). The generation of phase-coded microwave signals at
10 GHz, 18 GHz, and 28 GHz has been experimentally demonstrated, which verifies the proposed
technique positively. Since there is no use of any optical filters and fiber Bragg gratings (FBGs),
this system is rather simple and free from the optical bandwidth limitation problem with
operating in a continuous microwave bandwidth as large as limited only by the PolMs (from dc to
40 GHz).
语种: English
文献类型: Article
作者关键词: Microwave generation; microwave photonics; microwave phase coding; radar
microwave pulse compression
KeyWords Plus: LARGE FREQUENCY TUNABILITY; MILLIMETER-WAVE SIGNAL; POLARIZATION
MODULATOR
地址: [Wang, Hui; Zheng, Jianyu; Wang, Lixian; Liu, Jianguo; Xie, Liang; Zhu, Ninghua] Chinese
Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Xie, L (通讯作者),Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst
Semicond, Beijing 100083, Peoples R China.
电子邮件地址: xiel@semi.ac.cn
ISSN: 1943-0655
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61090390
61127018
61106049
National Basic Research Program of China 2012CB315702
National High Technology Research and Development Program of China 2009AA03Z409
This work was supported in part by the National Natural Science Foundation of China under
Grants 61090390, 61127018, and 61106049, by the National Basic Research Program of China
under Grant 2012CB315702, and by the National High Technology Research and Development
Program of China under Grant 2009AA03Z409. Corresponding author: L. Xie (e-mail:
xiel@semi.ac.cn).
-------------------------------------------------------------------------------第 55 条，共 234 条
标题: Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires
hybrid films
作者: Li, Z (Li, Zhi); Kang, JJ (Kang, Junjie); Liu, ZQ (Liu, Zhiqiang); Du, CX (Du, Chengxiao); Lee, X
(Lee, Xiao); Li, X (Li, Xiao); Wang, LC (Wang, Liancheng); Yi, XY (Yi, Xiaoyan); Zhu, HW (Zhu,
Hongwei); Wang, GH (Wang, Guohong)
来源出版物: AIP ADVANCES 卷: 3 期: 4 文献号: 042134 DOI: 10.1063/1.4803647 出版
年: APR 2013
摘要: Incorporating Ag nanowires with graphene resulted in improved electrical conductivity and
enhanced contact properties between graphene and p-GaN. The graphene/AgNWs hybrid films
exhibited high transmittance and lower sheet resistance compared to bare graphene. The specific
contact resistance between graphene and p-GaN reduced nearly an order of magnitude with the
introduction of AgNWs. As a result, light emitting diodes based on the hybrid films showed 44%
lower forward voltage and 2-fold higher light output power. The enhanced performance was
attributed to the bridging by AgNWs of cracks, grain boundaries in graphene and the reduction of
Schottky barrier height at graphene/p-GaN interface. (C) 2013 Author(s). All article content,
except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported
License. [http://dx.doi.org/10.1063/1.4803647]
语种: English
文献类型: Article
作 者 关 键 词 : contact resistance; gallium compounds; grain boundaries; graphene; III-V
semiconductors; light emitting diodes; nanowires; Schottky barriers; silver; wide band gap
semiconductors
KeyWords Plus: CHEMICAL-VAPOR-DEPOSITION; ELECTRODES
地址: [Li, Zhi; Kang, Junjie; Liu, Zhiqiang; Du, Chengxiao; Wang, Liancheng; Yi, Xiaoyan; Wang,
Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing
100083, Peoples R China.
[Lee, Xiao; Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R
China.
[Lee, Xiao; Zhu, Hongwei] Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R
China.
通讯作者地址: Li, Z (通讯作者),Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res
& Dev Ctr, Beijing 100083, Peoples R China.
电子邮件地址: lzq@semi.ac.cn; hongweizhu@tsinghua.edu.cn
ISSN: 2158-3226
基金资助致谢:
基金资助机构 授权号
National High Technology Program of China 2011AA03A105
2011AA03A103
National Natural Science Foundation of China 60806001
50972067
National Basic Research Program of China 2011CB301904
2011CB013000
This work was supported by the National High Technology Program of China (2011AA03A105,
2011AA03A103), the National Natural Science Foundation of China (60806001, 50972067), and
the National Basic Research Program of China (2011CB301904, 2011CB013000).
-------------------------------------------------------------------------------第 56 条，共 234 条
标题: X-ray probe of GaN thin films grown on InGaN compliant substrates
作者: Xu, XQ (Xu, Xiaoqing); Li, Y (Li, Yang); Liu, JM (Liu, Jianming); Wei, HY (Wei, Hongyuan); Liu,
XL (Liu, Xianglin); Yang, SY (Yang, Shaoyan); Wang, ZG (Wang, Zhanguo); Wang, HH (Wang,
Huanhua)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 13 文 献 号 : 132104 DOI:
10.1063/1.4799279 出版年: APR 1 2013
摘要: GaN thin films grown on InGaN compliant substrates were characterized by several X-ray
technologies: X-ray reciprocal space mapping (RSM), grazing incidence X-ray diffraction (GIXRD),
and X-ray photoemission spectrum (XPS). Narrow Lorentz broadening and stress free state were
observed for GaN grown on InGaN compliant substrate, while mosaic structure and large tensile
stress were observed at the presence of residual indium atoms. RSM disclosed the mosaicity, and
the GIXRD was conducted to investigate the depth dependences of crystal quality and strain
states. XPS depth profile of indium contents indicated that residual indium atoms deteriorated
the crystal quality of GaN not only by producing lattice mismatch at the interface of InGaN and
GaN but also by diffusing into GaN overlayers. Accordingly, two solutions were proposed to
improve the efficiency of self-patterned lateral epitaxial overgrowth method. This research goes a
further step in resolving the urgent substrate problem in GaN fabrication. (C) 2013 American
Institute of Physics. [http://dx.doi.org/10.1063/1.4799279]
语种: English
文献类型: Article
KeyWords Plus: EPITAXIAL LATERAL OVERGROWTH; STRAIN RELAXATION; DIFFRACTION; ALGAN
地址: [Xu, Xiaoqing; Liu, Jianming; Wei, Hongyuan; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo]
Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Li, Yang] Univ Sci & Technol Beijing, Dept Mat Sci, Beijing 100083, Peoples R China.
[Wang, Huanhua] Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys,
Beijing 100049, Peoples R China.
通讯作者地址: Xu, XQ (通讯作者),Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond,
Beijing 100083, Peoples R China.
电子邮件地址: xxq@semi.ac.cn; xlliu@semi.ac.cn; sh-yyang@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Science Foundation of China 60976008
61006004
61076001
10979507
Special Funds for Major State Basic Research Project (973 program) of China A000091109-05
863 High Technology R&D Program of China 2011AA03A101
This work was supported by National Science Foundation of China (Nos. 60976008, 61006004,
61076001, and 10979507), the Special Funds for Major State Basic Research Project (973 program)
of China (No. A000091109-05), and the 863 High Technology R&D Program of China (No.
2011AA03A101).
-------------------------------------------------------------------------------第 57 条，共 234 条
标题: Tailoring magnetism of multifunctional MnxGa films with giant perpendicular anisotropy
作者: Zhu, LJ (Zhu, L. J.); Pan, D (Pan, D.); Nie, SH (Nie, S. H.); Lu, J (Lu, J.); Zhao, JH (Zhao, J. H.)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 13 文 献 号 : 132403 DOI:
10.1063/1.4799344 出版年: APR 1 2013
摘要: We report wide-range composition and annealing effects on magnetic properties of MnxGa
films grown on GaAs (001) by molecular-beam epitaxy. We obtained single-crystalline MnxGa
films in a surprisingly wide composition range from x = 0.76 to 2.6. We show that the magnetism
could be effectively tailored by adjusting composition and annealing. Especially, when 0.76 <= x
<= 1.75, MnxGa films simultaneously show magnetization from 130 to 450 emu/cc, perpendicular
anisotropy from 8.6 to 21 Merg/cc, intrinsic coercivity from 4.38 to 20.1 kOe, normal coercivity to
3.6 kOe, energy product up to 3.4 MGOe, and thermal-stability up to at least 350 degrees C in
contact with GaAs. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799344]
语种: English
文献类型: Article
KeyWords Plus: EPITAXIAL-GROWTH; DELTA-PHASE; THIN-FILMS; MNGA; GALLIUM; GA
地址: [Zhu, L. J.; Pan, D.; Nie, S. H.; Lu, J.; Zhao, J. H.] Chinese Acad Sci, State Key Lab Superlattices
& Microstruct, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Zhao, JH (通讯作者),Chinese Acad Sci, State Key Lab Superlattices & Microstruct,
Inst Semicond, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: jhzhao@red.semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
NSFC 11127406
We gratefully thank G. Q. Pan and L. H. Wu at the U7B beamline of National Synchrotron
Radiation Laboratory (NSRL) and W. Wen and T. Y. Yang at the BL14B1 beamline of Shanghai
Synchrotron Radiation Facility (SSRF) in China for their help with XRD and XRR measurements. We
also thank Y. Y. Li from Institute of Semiconductors, Chinese Academy of Sciences for his help on
annealing experiments. This work was supported by the NSFC under Grant No. 11127406.
-------------------------------------------------------------------------------第 58 条，共 234 条
标题: Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic
Crystal without Electrical Performance Damages
作者: Du, CX (Du, Chengxiao); Geng, C (Geng, Chong); Zheng, HY (Zheng, Haiyang); Wei, TB (Wei,
Tongbo); Chen, Y (Chen, Yu); Zhang, YY (Zhang, Yiyun); Wu, K (Wu, Kui); Yan, QF (Yan, Qingfeng);
Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)
来源出版物: JAPANESE JOURNAL OF APPLIED PHYSICS 卷: 52 期: 4 文献号: 040207 DOI:
10.7567/JJAP.52.040207 出版年: APR 2013
摘 要 : Unencapsulated GaN-based light-emitting diodes (LEDs) with two-dimensional (2D)
hexagonal closely-packed silicon oxide nanobowls photonic crystal (PhC) on the indium tin oxide
(ITO) transparent conductive layer were fabricated by using polystyrene spheres and sol-gel
process. Compared to conventional LEDs with planar ITO layers, the light output power of
600-nm-lattice PhC LEDs was improved by 25.6% at an injection current of 20 mA. Furthermore,
electrical performance of the PhC LEDs was damage-free via this chemical technique. (C) 2013
The Japan Society of Applied Physics
语种: English
文献类型: Article
KeyWords Plus: HIGH-EXTRACTION-EFFICIENCY
地址: [Du, Chengxiao; Zheng, Haiyang; Wei, Tongbo; Chen, Yu; Zhang, Yiyun; Wu, Kui; Wang, Junxi;
Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing
100083, Peoples R China.
[Geng, Chong; Yan, Qingfeng] Tsinghua Univ, Dept Chem, State Key Lab New Ceram & Fine Proc,
Beijing 100084, Peoples R China.
[Chen, Yu] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
通讯作者地址: Du, CX (通讯作者),Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol
Res & Dev Ctr, Beijing 100083, Peoples R China.
电子邮件地址: tbwei@semi.ac.cn; chenyu@semi.ac.cn
ISSN: 0021-4922
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CB301902
National Natural Sciences Foundation of China 61274040
61274008
National High Technology Program of China 2011AA03A103
2011AA03A105
This work was supported by National Basic Research Program of China under Grant
2011CB301902 and by the National Natural Sciences Foundation of China under Grant Nos.
61274040 and 61274008, and by the National High Technology Program of China under Grant Nos.
2011AA03A103 and 2011AA03A105.
-------------------------------------------------------------------------------第 59 条，共 234 条
标题: The generation of MHz isolated XUV attosecond pulses by plasmonic enhancement in a
tailored symmetric Ag cross nanoantenna with a few-cycle laser
作者: Yang, YY (Yang, Ying-Ying); Li, QG (Li, Qian-Guang); Yu, HJ (Yu, Hai-Juan); Lin, XC (Lin,
Xue-Chun)
来 源 出 版 物 : LASER PHYSICS
卷 : 23
期 : 4
文 献 号 : 045301
DOI:
10.1088/1054-660X/23/4/045301 出版年: APR 2013
摘要: Within a few-cycle laser, the generation of MHz isolated extreme ultraviolet (XUV)
attosecond pulses via nanoplasmonic field enhancement in silver nanostructures is theoretically
investigated. Numerical techniques are employed to optimize nanoantennas and attain plasmonic
field enhancement factors up to 270. In a volume of 15 x 15 x 30 nm(-3) in the nanoantenna, the
intensity could be enhanced to 10(14) W cm(-2) for high harmonic generation (HHG). Optimal
conditions for the production of MHz isolated attosecond pulses of 140 attosecond duration via
HHG have been identified. These findings open up the possibility for the development of a
compact source of ultrashort XUV pulses with MHz repetition rates. Moreover, asymmetric cross
HHG is proposed to control the polarizations, select the wavelengths by varying the ratio of silver
nanoantennas and generate XUV pulses in both polarized directions.
语种: English
文献类型: Article
KeyWords Plus: HIGH-HARMONIC-GENERATION; IONIZATION; EQUATION
地址: [Yang, Ying-Ying; Yu, Hai-Juan; Lin, Xue-Chun] Chinese Acad Sci, Inst Semicond, Lab Solid
State Laser Sources, Beijing 100083, Peoples R China.
[Li, Qian-Guang] Hubei Engn Univ, Dept Phys, Xiaogan 432000, Peoples R China.
通讯作者地址: Yang, YY (通讯作者),Chinese Acad Sci, Inst Semicond, Lab Solid State Laser
Sources, Beijing 100083, Peoples R China.
电子邮件地址: yangyy@semi.ac.cn; xclin@semi.ac.cn
ISSN: 1054-660X
基金资助致谢:
基金资助机构 授权号
National Key Scientific Research Project of China 2012CB934200
National High Technology Research and Development Program of China 2011AA030206
Key Foundation of Chinese Ministry of Education 211117
We are very grateful to Professor Matthias F. Kling, Dr Sarah L. Stebbings and Frederik
Sussmannin at the Max-Planck Institute of Quantum Optics (MPQ), Germany for their valuable
discussions on this paper. This research has been supported by the National Key Scientific
Research Project of China under Grant No. 2012CB934200, the National High Technology
Research and Development Program of China under Grant No. 2011AA030206, and the Key
Foundation of Chinese Ministry of Education under Grant No. 211117.
-------------------------------------------------------------------------------第 60 条，共 234 条
标题: Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates
with Graphene-Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources
作者: Liu, XF (Liu, Xingfang); Sun, GS (Sun, Guosheng); Liu, B (Liu, Bin); Yan, GG (Yan, Guoguo);
Guan, M (Guan, Min); Zhang, Y (Zhang, Yang); Zhang, F (Zhang, Feng); Chen, Y (Chen, Yu); Dong, L
(Dong, Lin); Zheng, L (Zheng, Liu); Liu, SB (Liu, Shengbei); Tian, LX (Tian, Lixin); Wang, L (Wang,
Lei); Zhao, WS (Zhao, Wanshun); Zeng, YP (Zeng, Yiping)
来源出版物: MATERIALS 卷: 6 期: 4 页: 1543-1553
APR 2013
DOI: 10.3390/ma6041543
出版年:
摘要: We report a new method for growing hexagonal columnar nanograin structured silicon
carbide (SiC) thin films on silicon substrates by using graphene-graphitic carbon nanoflakes (GGNs)
templates from solid carbon sources. The growth was carried out in a conventional low pressure
chemical vapor deposition system (LPCVD). The GGNs are small plates with lateral sizes of around
100 nm and overlap each other, and are made up of nanosized multilayer graphene and graphitic
carbon matrix (GCM). Long and straight SiC nanograins with hexagonal shapes, and with lateral
sizes of around 200-400 nm are synthesized on the GGNs, which form compact SiC thin films.
语种: English
文献类型: Article
作者关键词: hexagonal columnar; silicon carbide; thin film; graphene; nanoflake; solid carbon;
CVD
KeyWords Plus: HOMOEPITAXIAL GROWTH; LAYERS; NANOWIRES; CRYSTALS; DEVICES; MOSFETS;
PVT
地址: [Liu, Xingfang; Sun, Guosheng; Liu, Bin; Yan, Guoguo; Guan, Min; Zhang, Yang; Zhang, Feng;
Dong, Lin; Zheng, Liu; Liu, Shengbei; Tian, Lixin; Wang, Lei; Zhao, Wanshun; Zeng, Yiping] Chinese
Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
[Chen, Yu; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr,
Beijing 100083, Peoples R China.
通讯作者地址: Liu, XF (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : liuxf@mail.semi.ac.cn; gshsun@red.semi.ac.cn; liubin2010@semi.ac.cn;
ggyan@semi.ac.cn; guanmin@red.semi.ac.cn; zhang_yang@mail.semi.ac.cn; fzhang@semi.ac.cn;
chenyu@semi.ac.cn; donglin09@semi.ac.cn; liuero@semi.ac.cn; liushengbei@semi.ac.cn;
tianlixin@semi.ac.cn; wangl@semi.ac.cn; zwshuke@semi.ac.cn; ypzeng@red.semi.ac.cn
ISSN: 1996-1944
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61274007
61274008
Beijing Natural Science Foundation 4132074
The authors would like to thank the financial support by the National Natural Science Foundation
of China (grant Nos. 61274007 and 61274008) and the Beijing Natural Science Foundation (grant
No. 4132074).
-------------------------------------------------------------------------------第 61 条，共 234 条
标 题 : Temperature-dependent emission shift and carrier dynamics in deep ultraviolet
AlGaN/AlGaN quantum wells
作者: Zeng, JP (Zeng, Jianping); Li, W (Li, Wei); Yan, JC (Yan, Jianchang); Wang, JX (Wang, Junxi);
Cong, PP (Cong, Peipei); Li, JM (Li, Jinmin); Wang, WY (Wang, Weiying); Jin, P (Jin, Peng); Wang,
ZG (Wang, Zhanguo)
来源出版物: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 卷: 7 期: 4 页: 297-300
DOI: 10.1002/pssr.201307004 出版年: APR 2013
摘要: Radiative and nonradiative processes in deep ultraviolet (DUV) AlGaN/AlGaN multiple
quantum wells (MQWs) grown by LP-MOCVD have been studied by means of deep ultraviolet
time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL)
spectroscopy. As the temperature is increased, the peak energy of DUV-AlGaN/AlGaN MQWs PL
emission (E-p) exhibits a similarly anti-S-shaped behavior (blueshift - accelerated redshift decelerated redshift): E-p increases in the temperature range of 5.9-20 K and decreases for
20-300 K, involving an accelerated redshift for 20-150 K and an opposite decelerated redshift for
150-300 K with temperature increase. Especially at high temperature as 300 K, the slope of the
E-p redshift tends towards zero. This temperature-induced PL shift is strongly affected by the
change in carrier dynamics with increasing temperature. (C) 2013 WILEY-VCH Verlag GmbH & Co.
KGaA, Weinheim
语种: English
文献类型: Article
作者关键词: AlGaN; quantum wells; photoluminescence; lifetime
KeyWords Plus: LIGHT-EMITTING-DIODES; PHOTOLUMINESCENCE
地址: [Zeng, Jianping; Yan, Jianchang; Wang, Junxi; Cong, Peipei; Li, Jinmin] Chinese Acad Sci, Inst
Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R China.
[Li, Wei; Wang, Weiying; Jin, Peng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab
Semicond Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: Zeng, JP (通讯作者),Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr,
Beijing 100083, Peoples R China.
电子邮件地址: zengjp@semi.ac.cn
ISSN: 1862-6254
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61006038
National High Technology Research and Development Program of China 2011AA03A111
Chinese Academy of Sciences Y177080000
We gratefully acknowledge the financial support of the National Natural Science Foundation of
China (Grant No. 61006038), the National High Technology Research and Development Program
of China (No. 2011AA03A111) and the President Award for Scientific Research of special funds of
Chinese Academy of Sciences (Y177080000).
-------------------------------------------------------------------------------第 62 条，共 234 条
标题: Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN
heterostructure field-effect transistors
作者: Cao, ZF (Cao Zhi-Fang); Lin, ZJ (Lin Zhao-Jun); Lu, YJ (Lu Yuan-Jie); Luan, CB (Luan
Chong-Biao); Wang, ZG (Wang Zhan-Guo)
来 源 出 版 物 : CHINESE PHYSICS B
卷 : 22
期: 4
文 献 号 : 047102
DOI:
10.1088/1674-1056/22/4/047102 出版年: APR 2013
摘要: Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs)
with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both
fabricated with same size. It was found there is a significant difference between Schottky drain
AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in
two-dimensional electron gas (2DEG) electron mobility in the gate-drain channel. We attribute
this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained
AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts
gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain
contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky
drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly.
语种: English
文献类型: Article
作 者 关 键 词 : AlGaN/AlN/GaN HFET; Schottky drain contact; AlGaN barrier layer strain;
polarization Coulomb field scattering
地址: [Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao] Shandong Univ, Sch Phys, Jinan
250100, Peoples R China.
[Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083,
Peoples R China.
通讯作者地址: Lin, ZJ (通讯作者),Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
电子邮件地址: linzj@sdu.edu.cn
ISSN: 1674-1056
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 11174182
Specialized Research Fund for the Doctoral Program of Higher Education of China
20110131110005
Project supported by the National Natural Science Foundation of China (Grant No. 11174182) and
the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No.
20110131110005).
--------------------------------------------------------------------------------
第 63 条，共 234 条
标题: Influence of strain and electric field on the properties of silicane
作者: Cheng, G (Cheng Gang); Liu, PF (Liu Peng-Fei); Li, ZT (Li Zi-Tao)
来 源 出 版 物 : CHINESE PHYSICS B
卷 : 22
期: 4
文 献 号 : 046201
DOI:
10.1088/1674-1056/22/4/046201 出版年: APR 2013
摘要: We investigate the influence of strain and electric field on the properties of a silicane sheet.
Some elastic parameters of silicane, such as an in-plane stiffness of 52.55 N/m and a Poisson's
ratio of 0.24, are obtained by calculating the strain energy. Compared with silicene, silicane is
softer because of its relatively weaker Si-Si bonds. The band structure of silicane is tunable by a
uniform tensile strain, with the increase of which the band gap decreases monotonously.
Moreover, silicane undergoes an indirect-direct gap transition under a small strain, and a
semiconductor-metal transition under a large strain. The electric field can change the Si-H bond
length of silicane significantly. When a strong field is applied, the H atom at the high potential
side becomes desorbed, while the H atom at the low potential side keeps bonded. So an external
electric field can help to produce single-side hydrogenated silicene from silicane. We believe this
study will be helpful for the application of silicane in the future.
语种: English
文献类型: Article
作者关键词: silicane; strain; electric field; first-principles calculation
KeyWords Plus: SILICENE
地址: [Cheng Gang; Liu Peng-Fei; Li Zi-Tao] Chinese Acad Sci, Inst Semicond, State Key Lab
Superlattices & Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Cheng, G (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, Beijing 100083, Peoples R China.
电子邮件地址: Chenggang@semi.ac.cn
ISSN: 1674-1056
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60925016
Project supported by the National Natural Science Foundation of China (Grant No. 60925016).
-------------------------------------------------------------------------------第 64 条，共 234 条
标题: InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode
interferometer configuration
作者: Li, XK (Li Xin-Kun); Jin, P (Jin Peng); Liang, DC (Liang De-Chun); Wu, J (Wu Ju); Wang, ZG
(Wang Zhan-Guo)
来 源 出 版 物 : CHINESE PHYSICS B
卷 : 22
期: 4
文 献 号 : 048102
DOI:
10.1088/1674-1056/22/4/048102 出版年: APR 2013
摘要: With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region,
the superluminescent diodes emitting at wavelength of around 970 nm are fabricated. By using
an active multimode interferometer configuration, these devices exhibit high continue-wave
output powers from the narrow ridge waveguides. At continue-wave injection current of 800 mA,
an output power of 18.5 mW, and the single Gaussian-like emission spectrum centered at 972 nm
with a full width at half maximum of 18 nm are obtained.
语种: English
文献类型: Article
作者关键词: quantum dot; submonolayer; self-assembled; superluminescent diode
KeyWords Plus: OPTICAL COHERENCE TOMOGRAPHY; LIGHT-EMITTING-DIODES
地址: [Jin Peng] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,
Peoples R China.
Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing
100083, Peoples R China.
通讯作者地址: Jin, P (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: pengjin@semi.ac.cn
ISSN: 1674-1056
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2006CB604904
National Natural Science Foundation of China 60976057
61274072
60876086
Project supported by the National Basic Research Program of China (Grant No. 2006CB604904)
and the National Natural Science Foundation of China (Grant Nos. 60976057, 61274072, and
60876086).
-------------------------------------------------------------------------------第 65 条，共 234 条
标题: Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector
作者: Yuan, SP (Yuan Si-Peng); Shen, C (Shen Chao); Zheng, HZ (Zheng Hou-Zhi); Liu, Q (Liu Qi);
Wang, LG (Wang Li-Guo); Meng, KK (Meng Kang-Kang); Zhao, JH (Zhao Jian-Hua)
来 源 出 版 物 : CHINESE PHYSICS B
卷 : 22
期: 4
文 献 号 : 047202
DOI:
10.1088/1674-1056/22/4/047202 出版年: APR 2013
摘要: Electric luminescence and its circular polarization in a Co2MnAl injector-based light
emitting diode (LED) has been detected at the transition of e-A(C)(0), where injected
spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization
degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm
before they recombine with holes bound at neutral carbon acceptors in a p(+)-GaAs layer. The
large volume of the p(+)-GaAs layer can facilitate the detection of weak electric luminescence (EL)
from e-A(C)(0) emission without being quenched at higher bias as in quantum wells. Moreover,
unlike the interband electric luminescence in the p(+)-GaAs layer, where the spin polarization of
injected electrons is destroyed by a very effective electron-hole exchange scattering (BAP
mechanism), the spin polarization of injected electrons seems to survive during their
recombination with holes bound at carbon acceptors.
语种: English
文献类型: Article
作者关键词: spin injection; Co2MnAl Heusler alloy; electric luminescence
KeyWords Plus: SEMICONDUCTORS
地址: [Yuan Si-Peng; Shen Chao; Zheng Hou-Zhi; Liu Qi; Wang Li-Guo; Meng Kang-Kang; Zhao
Jian-Hua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing
100083, Peoples R China.
通 讯 作 者 地 址 : Zheng, HZ ( 通 讯 作 者 ),Chinese Acad Sci, Inst Semicond, State Key Lab
Superlattices & Microstruct, Beijing 100083, Peoples R China.
电子邮件地址: hzzheng@red.semi.ac.cn
ISSN: 1674-1056
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CB932901
National Natural Science Foundation of China 60836002
Project supported by the National Basic Research Program of China (Grant No. 2011CB932901)
and the National Natural Science Foundation of China (Grant No. 60836002).
-------------------------------------------------------------------------------第 66 条，共 234 条
标题: A High Sensitivity Index Sensor Based on Magnetic Plasmon Resonance in Metallic Grating
with Very Narrow Slits
作者: Xu, BZ (Xu Bin-Zong); Liu, JT (Liu Jie-Tao); Hu, HF (Hu Hai-Feng); Wang, LN (Wang Li-Na); Wei,
X (Wei Xin); Song, GF (Song Guo-Feng)
来 源 出 版 物 : CHINESE PHYSICS LETTERS 卷 : 30 期 : 4 文 献 号 : 040702 DOI:
10.1088/0256-307X/30/4/040702 出版年: APR 2013
摘要: The index sensing characteristics of metallic deep gratings are numerically investigated. The
concept is based on magnetic polariton resonance, which is very sensitive to changes in the
refractive index of the surrounding medium. We numerically demonstrate that the sensitivity and
figure of merit of the magnetic plasmon mode can be tailored by adjusting the depth and width
of the slits. The highest sensitivity of 1542nm per refractive index unit with a good figure of merit
of 12.3 is obtained. The angle-insensitive property with a high signal intensity of this system could
be useful for the future design and application of wide-range sensitive plasmonic index sensors.
语种: English
文献类型: Article
KeyWords Plus: MACH-ZEHNDER INTERFEROMETER; REFRACTION
地址: [Xu Bin-Zong; Liu Jie-Tao; Hu Hai-Feng; Wang Li-Na; Wei Xin; Song Guo-Feng] Chinese Acad
Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Song, GF (通讯作者),Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R
China.
电子邮件地址: sgf@red.semi.ac.cn
ISSN: 0256-307X
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CBA00608
2012CB619203
National Natural Science Foundation of China 60906028
61036010
61177070
External Cooperation Program of the Chinese Academy of Sciences GJHZ200804
Supported by the National Basic Research Program of China under Grant Nos 2011CBA00608 and
2012CB619203, the National Natural Science Foundation of China under Grant Nos 60906028,
61036010 and 61177070, and the External Cooperation Program of the Chinese Academy of
Sciences under Grant No GJHZ200804.
-------------------------------------------------------------------------------第 67 条，共 234 条
标题: High Quality Pseudomorphic In-0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area
Transmission Electro-Absorption Modulators
作者: Yang, XH (Yang Xiao-Hong); Liu, SQ (Liu Shao-Qing); Ni, HQ (Ni Hai-Qiao); Li, MF (Li Mi-Feng);
Li, L (Li Liang); Han, Q (Han Qin); Niu, ZC (Niu Zhi-Chuan)
来 源 出 版 物 : CHINESE PHYSICS LETTERS 卷 : 30 期 : 4 文 献 号 : 046102 DOI:
10.1088/0256-307X/30/4/046102 出版年: APR 2013
摘要: The good quality of 200 pairs of highly strained In0.24GaAs/GaAs multi-quantum-well
(MQW) structure is demonstrated by the x-ray diffraction and photoluminescence curves.
Large-area modulators based on the pseudomorphic In0.24GaAs/GaAs MQW are designed and
fabricated successfully, where the diameters are not less than 3 mm and the working wavelength
is extended to 1064 nm. The single pass modulation depth is demonstrated to be 0.34 at 1064
nm at a reverse voltage of 80 V.
语种: English
文献类型: Article
KeyWords Plus: FABRICATION
地址: [Yang Xiao-Hong; Liu Shao-Qing; Li Liang; Han Qin] Chinese Acad Sci, Inst Semicond, State
Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
[Ni Hai-Qiao; Li Mi-Feng; Niu Zhi-Chuan] Chinese Acad Sci, Inst Semicond, State Key Lab
Superlattices & Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Yang, XH (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: xhyang@red.semi.ac.cn
ISSN: 0256-307X
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61274069
61176053
61021003
National High-Technology Research and Development Program of China 2012AA012202
National Basic Research Program of China 2012CB933503
2013CB932904
Supported by the National Natural Science Foundation of China under Grant Nos 61274069,
61176053 and 61021003, the National High-Technology Research and Development Program of
China under Grant No 2012AA012202, and the National Basic Research Program of China under
Grant Nos 2012CB933503 and 2013CB932904.
-------------------------------------------------------------------------------第 68 条，共 234 条
标题: Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire
作者: Yu, Y (Yu, Ying); Li, MF (Li, Mi-Feng); He, JF (He, Ji-Fang); He, YM (He, Yu-Ming); Wei, YJ (Wei,
Yu-Jia); He, Y (He, Yu); Zha, GW (Zha, Guo-Wei); Shang, XJ (Shang, Xiang-Jun); Wang, J (Wang,
Juan); Wang, LJ (Wang, Li-Juan); Wang, GW (Wang, Guo-Wei); Ni, HQ (Ni, Hai-Qiao); Lu, CY (Lu,
Chao-Yang); Niu, ZC (Niu, Zhi-Chuan)
来源出版物: NANO LETTERS 卷: 13 期: 4 页: 1399-1404 DOI: 10.1021/nl304157d 出版
年: APR 2013
摘要: We report a new type of single InAs quantum dot (QD) embedded at the junction of
gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The
photoluminescence intensity of such QD is similar to 20 times stronger than that from randomly
distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.2 K
with a line width of 101 mu eV and a vanishing two-photon emission probability of g(2)(0) =
0.031(2). This new nanostructure may open new ways for designing novel quantum
optoelectronic devices.
语种: English
文献类型: Article
作者关键词: InAs quantum dot; III-V branched nanowire; photoluminescence; single photon
emitters
KeyWords Plus: PHOTON SOURCES; HETEROSTRUCTURES; EXCITON; MECHANISM
地址: [Yu, Ying; Li, Mi-Feng; He, Ji-Fang; Zha, Guo-Wei; Shang, Xiang-Jun; Wang, Juan; Wang,
Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan] Chinese Acad Sci, Inst Semicond, State Key
Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
[He, Yu-Ming; Wei, Yu-Jia; He, Yu; Lu, Chao-Yang] Univ Sci & Technol China, Hefei Natl Lab Phys Sci
Microscale, Hefei 230026, Anhui, Peoples R China.
[He, Yu-Ming; Wei, Yu-Jia; He, Yu; Lu, Chao-Yang] Univ Sci & Technol China, Dept Modern Phys,
Hefei 230026, Anhui, Peoples R China.
通讯作者地址: Niu, ZC (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: zcniu@semi.ac.cn
ISSN: 1530-6984
基金资助致谢:
基金资助机构 授权号
National Key Basic Research Program of China 2013CB933304
2010CB327601
2012CB932701
National Natural Science Foundation of China 90921015
61176012
Chinese Academy of Sciences XDB01010200
The author wishes to acknowledge contributions by current graduate students Shuang Yang,
Shuai Luo, Xiuming Dou, Haiyan Wang, Xuefei Wu, and Yuede Yang at Institute of Semiconductors
(IOS) and sincerely thank Professor JianWei Pan at University of Science and Technology of China,
Xinglong Wu at Nanjing University, and Yongzheng Huang, Desheng Jiang, Baoquan Sun at IOS for
valuable discussions. This work is supported by the National Key Basic Research Program of China
(Grant Nos. 2013CB933304, 2010CB327601, 2012CB932701), the National Natural Science
Foundation of China (Grant Nos. 90921015, 61176012), and Strategic Priority Research Program
(B) of the Chinese Academy of Sciences (Grant No. XDB01010200).
-------------------------------------------------------------------------------第 69 条，共 234 条
标题: All Zinc-Blende GaAs/(Ga,Mn)As Core-Shell Nanowires with Ferromagnetic Ordering
作者: Yu, XZ (Yu, Xuezhe); Wang, HL (Wang, Hailong); Pan, D (Pan, Dong); Zhao, JH (Zhao, Jianhua);
Misuraca, J (Misuraca, Jennifer); von Molnar, S (von Molnar, Stephan); Xiong, P (Xiong, Peng)
来源出版物: NANO LETTERS 卷: 13 期: 4 页: 1572-1577 DOI: 10.1021/nl304740k 出版
年: APR 2013
摘要: Combining self-catalyzed vapor liquid solid growth of GaAs nanowires and low-temperature
molecular-beam epitaxy of (Ga,Mn)As, we successfully synthesized all zinc-blende (ZB)
GaAs/(Ga,Mn)As core-shell nanowires on Si(111) substrates. The ZB GaAs nanowire cores are first
fabricated at high temperature by utilizing the Ga droplets as the catalyst and controlling the
triple phase line nucleation, then the (Ga,Mn)As shells are epitazially grown on the side facets of
the GaAs core at low temperature. The growth window for the pure phase GaAs/(Ga,Mn)As core
shell nanowires is found to be very narrow. Both high-resolution transmission electron
microscopy and scanning electron microscopy observations confirm that all-ZB GaAs/(Ga,Mn)As
core-shell nanowires with smooth side surface are obtained when the Mn concentration is not
more than 2% and the growth temperature is 245 degrees C or below. Magnetic measurements
with different applied field directions provide strong evidence for ferromagnetic ordering in the
all-ZB GaAs/(Ga,Mn)As nanowires. The hybrid nanowires offer an attractive platform to explore
spin transport and device concepts in fully epitaxial all-semiconductor nanospintronic structures.
语种: English
文献类型: Article
作 者 关 键 词 : Magnetic semiconductors; zinc-blende nanowire; magnetic property;
molecular-beam epitaxy
KeyWords
Plus:
CATALYZED
GAAS
NANOWIRES;
MOLECULAR-BEAM
EPITAXY;
ROOM-TEMPERATURE; MN NANOWIRES; SEMICONDUCTOR; (GA,MN)AS; SPINTRONICS; DIOXIDE;
COBALT; GROWTH
地址: [Yu, Xuezhe; Wang, Hailong; Pan, Dong; Zhao, Jianhua] Chinese Acad Sci, Inst Semicond,
State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
[Misuraca, Jennifer; von Molnar, Stephan; Xiong, Peng] Florida State Univ, Dept Phys, Tallahassee,
FL 32306 USA.
通讯作者地址: Zhao, JH (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, Beijing 100083, Peoples R China.
电子邮件地址: jhzhao@red.semi.ac.cn
ISSN: 1530-6984
基金资助致谢:
基金资助机构 授权号
MOST of China 2012CB932701
NSFC 60836002
10920101071
NSF Materials World Network DMR-0908625
J.H.Z. thanks MOST of China for Grant 2012CB932701 and NSFC for Grants 60836002 and
10920101071. S.v.M. and P.X. acknowledge NSF Materials World Network Grant DMR-0908625.
-------------------------------------------------------------------------------第 70 条，共 234 条
标题: Modulation of Thermal Conductivity in Kinked Silicon Nanowires: Phonon Interchanging
and Pinching Effects
作者: Jiang, JW (Jiang, Jin-Wu); Yang, N (Yang, Nuo); Wang, BS (Wang, Bing-Shen); Rabczuk, T
(Rabczuk, Timon)
来源出版物: NANO LETTERS 卷: 13 期: 4 页: 1670-1674 DOI: 10.1021/nl400127q 出版
年: APR 2013
摘要: We perform molecular dynamics simulations to investigate the reduction of the thermal
conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at
room temperature. The temperature dependence of the reduction is also calculated. By
calculating phonon polarization vectors, two mechanisms are found to be responsible for the
reduced thermal conductivity: (1) the interchanging effect between the longitudinal and
transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the
twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates
that the phonon interchanging and pinching effects, induced by kinking, are brand-new and
effective ways in modulating heat transfer in nanowires, which enables the kinked silicon
nanowires to be a promising candidate for thermoelectric materials.
语种: English
文献类型: Article
作者关键词: Kinked silicon nanowire; thermal conductivity; phonon pinching effect; phonon
localization
KeyWords Plus: SEMICONDUCTOR NANOWIRE; CONFINEMENT; DYNAMICS; KINKING; GROWTH
地址: [Jiang, Jin-Wu; Rabczuk, Timon] Bauhaus Univ Weimar, Inst Struct Mech, D-99423 Weimar,
Germany.
[Yang, Nuo] Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092,
Peoples R China.
[Wang, Bing-Shen] Chinese Acad Sci, State Key Lab Semicond Superlattice & Microstruct, Beijing
100083, Peoples R China.
[Wang, Bing-Shen] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Jiang, JW (通讯作者),Bauhaus Univ Weimar, Inst Struct Mech, Marienstr 15,
D-99423 Weimar, Germany.
电子邮件地址: jinwu.jiang@uni-weimar.de; imyangnuo@tongji.edu.cn
ISSN: 1530-6984
基金资助致谢:
基金资助机构 授权号
Grant Research Foundation (DFG) Germany
National Natural Science Foundation of China 11204216
Tongji University, China
We thank H. S. Park at Boston University for useful discussions. The work is supported in part by
the Grant Research Foundation (DFG) Germany. N. Y. acknowledges the support by the National
Natural Science Foundation of China (Grant No. 11204216) and the startup fund from Tongji
University, China.
-------------------------------------------------------------------------------第 71 条，共 234 条
标题: Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell
作者: Li, ZD (Li, Zhidong); Xiao, HL (Xiao, Hongling); Wang, XL (Wang, Xiaoliang); Wang, CM (Wang,
Cuimei); Deng, QW (Deng, Qingwen); Jing, L (Jing, Liang); Ding, JQ (Ding, Jieqin); Hou, X (Hou,
Xun)
来 源 出 版 物 : PHYSICA B-CONDENSED MATTER
卷 : 414
页 : 110-114
DOI:
10.1016/j.physb.2013.01.026 出版年: APR 1 2013
摘要: In this study, potential efficiency of InGaN/Si mechanically stacked two-junction solar cell is
theoretically investigated by optimizing the band gap and thickness of the top InGaN cell. Results
show that the optimum conversion efficiency is 35.2% under AM 1.5G spectral illuminations, with
the bandgap and thickness of top InGaN solar cell are 2.0eV and 600 nm, respectively. The results
and discussion would be helpful in designing and fabricating high efficiency InGaN/Si
mechanically stacked solar cell in experiment. (C) 2013 Elsevier B.V. All rights reserved.
语种: English
文献类型: Article
作者关键词: InGaN; Si; Mechanically stacked; Tandem solar cell
KeyWords Plus: THICKNESS; GAN
地址: [Li, Zhidong; Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Jing, Liang;
Ding, Jieqin] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples
R China.
[Wang, Xiaoliang] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing, Peoples R China.
[Hou, Xun] Xi An Jiao Tong Univ, Xian 710049, Peoples R China.
通讯作者地址: Xiao, HL (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
POB 912, Beijing 100083, Peoples R China.
电子邮件地址: hlxiao@semi.ac.cn
ISSN: 0921-4526
基金资助致谢:
基金资助机构 授权号
National Nature Sciences Foundation of China 61076052
60906006
State Key Development Program for Basic Research of China 2012CB619303
National High Technology Research and Development Program 2011AA050514
This work was supported by the National Nature Sciences Foundation of China (No 61076052 and
60906006), the State Key Development Program for Basic Research of China (No 2012CB619303),
the National High Technology Research and Development Program (No 2011AA050514).
-------------------------------------------------------------------------------第 72 条，共 234 条
标题: Slotted Hybrid III-V/Silicon Single-Mode Laser
作者: Zhang, YJ (Zhang, Yejin); Wang, HL (Wang, Hailing); Qu, HW (Qu, Hongwei); Zhang, SL
(Zhang, Siriguleng); Zheng, WH (Zheng, Wanhua)
来源出版物: IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 7 页: 655-658 DOI:
10.1109/LPT.2013.2248082 出版年: APR 1 2013
摘要: In this letter, a III-V/silicon hybrid single-mode laser operating at L band for photonic
integrated circuits is presented. The AlGaInAs gain structure is bonded onto a patterned silicon-on
insulator wafer directly. The novel mode-selection mechanism based on a slotted silicon
waveguide is applied, which only needs i-line projection photolithography in the whole
fabrication process. At room temperature, we obtain 0.85 and 3.5 mW output power in
continuous-wave and pulse-wave regimes, respectively. The side-mode suppression ratio of larger
than 25 dB is obtained from experiments.
语种: English
文献类型: Article
作者关键词: Hybrid silicon laser; photonic integrated circuits; side-mode suppression ratio;
single-mode laser
KeyWords Plus: SILICON NANOCRYSTALS; OPTICAL GAIN
地址: [Zhang, Yejin; Wang, Hailing; Qu, Hongwei; Zhang, Siriguleng; Zheng, Wanhua] Chinese
Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Zhang, YJ (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : yjzhang@semi.ac.cn; hlwang@sina.com; quhongwei@sina.com;
zhangsi@sina.com; whuazheng@sina.com
ISSN: 1041-1135
基金资助致谢:
基金资助机构 授权号
Chinese National Key Basic Research Special Fund/CNKBRSF 2012CB933501
2011CB922002
National Natural Science Foundation of China 61274070
61021003
61234004
61025025
61137003
60838003
National High Technology Research and Development Program of China 2012AA012202
This work was supported in part by the Chinese National Key Basic Research Special
Fund/CNKBRSF under Grant 2012CB933501 and Grant 2011CB922002, in part by the National
Natural Science Foundation of China under Grant 61274070, Grant 61021003, Grant 61234004,
Grant 61025025, Grant 61137003, and Grant 60838003, and in part by the National High
Technology Research and Development Program of China under Grant 2012AA012202.
-------------------------------------------------------------------------------第 73 条，共 234 条
标题: Photonic Generation of Phase Coded Microwave Pulses Using Cascaded Polarization
Modulators
作者: Wang, LX (Wang, Li Xian); Li, W (Li, Wei); Wang, H (Wang, Hui); Zheng, JY (Zheng, Jian Yu);
Liu, JG (Liu, Jian Guo); Zhu, NH (Zhu, Ning Hua)
来源出版物: IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 7 页: 678-681 DOI:
10.1109/LPT.2013.2249060 出版年: APR 1 2013
摘要: We demonstrate a technique of generating a binary phase coded microwave pulse based
on two cascaded polarization modulators (PolMs). The first PolM (PolM1) followed by an optical
band-pass filter is used to generate two phase-locked and polarization orthogonal optical
frequencies. The second PolM (PolM2) aims to change their polarization states. A polarizer
attached to the output of PolM2 allows only one of the two optical frequencies passing, or
combines them with positive/negative phase difference. By changing the voltage level of the
electrical modulation signal applied to PolM2, a series of binary phase coded microwave pulses is
directly generated from a continuous wave microwave signal in the optical domain. In the
proposed system, the precise amplitude control or amplification of the modulation signal are
avoided. The waveform of the generated pulse is very stable. For a proof-of-concept experiment,
a series of 25-GHz pulses with similar to 2.08-ns pulse duration and similar to 10.24-ns repetition
time is generated. The pulses are phase coded by a 13-bit Barker code.
语种: English
文献类型: Article
作者关键词: Microwave pulse compression; microwave photonics; phase coding; radar
KeyWords Plus: LARGE FREQUENCY TUNABILITY; MILLIMETER-WAVE SIGNAL; FORM GENERATION;
SHAPER
地址: [Wang, Li Xian; Li, Wei; Wang, Hui; Zheng, Jian Yu; Liu, Jian Guo; Zhu, Ning Hua] Chinese
Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Wang, LX (通讯作者),Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R
China.
电子邮件地址: lxwang@semi.ac.cn; liwei05@semi.ac.cn; whui@semi.ac.cn; jyzheng@semi.ac.cn;
jgliu@semi.ac.cn; nhzhu@semi.ac.cn
ISSN: 1041-1135
基金资助致谢:
基金资助机构 授权号
National Natural Foundation of China 61275078
61108002
National Basic Research Program of China 2012CB315703
This work was supported in part by the National Natural Foundation of China under Grant
61275078 and Grant 61108002, and in part by the National Basic Research Program of China
under Grant 2012CB315703.
-------------------------------------------------------------------------------第 74 条，共 234 条
标题: High Performance Surface Grating Distributed Feedback Quantum Cascade Laser
作者: Zhang, JC (Zhang, Jinchuan); Liu, FQ (Liu, Fengqi); Wang, LJ (Wang, Lijun); Chen, JY (Chen,
Jianyan); Zhai, SQ (Zhai, Shenqiang); Liu, JQ (Liu, Junqi); Wang, ZG (Wang, Zhanguo)
来源出版物: IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 7 页: 686-689 DOI:
10.1109/LPT.2013.2248081 出版年: APR 1 2013
摘要: We report on the development of lambda similar to 4.7 mu m continuous-wave (CW)
operation of surface grating distributed feedback (DFB) quantum cascade lasers (QCLs). A high
wall plug efficiency (WPE) of 7% is obtained at 15 degrees C from a single facet producing over
0.85 W of CW output power. The threshold current density of DFB QCL is as low as 1.19 kA/cm at
15 degrees C and 2.29 kA/cm at 90 degrees C in CW mode. Single-mode operation with side
mode suppression ratio above 25 dB is observed in the working temperature of 15 degrees-95
degrees C.
语种: English
文献类型: Article
作者关键词: Distributed feedback devices; quantum cascade lasers; semiconductor lasers
KeyWords Plus: CONTINUOUS-WAVE OPERATION; ROOM-TEMPERATURE; MU-M; POWER
地址: [Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Chen, Jianyan; Zhai, Shenqiang; Liu, Junqi; Wang,
Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R
China.
[Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Chen, Jianyan; Zhai, Shenqiang; Liu, Junqi; Wang,
Zhanguo] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.
通讯作者地址: Zhang, JC (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: fqliu@semi.ac.cn; ljwang@semi.ac.cn
ISSN: 1041-1135
基金资助致谢:
基金资助机构 授权号
National Research Projects of China 2013CB632801
2013CB632803
2011YQ13001802-04
61274094
10990103
This work was supported by the National Research Projects of China under Grant 2013CB632801,
Grant 2013CB632803, Grant 2011YQ13001802-04, Grant 61274094, and Grant 10990103.
-------------------------------------------------------------------------------第 75 条，共 234 条
标题: Continuous blood separation utilizing spiral filtration microchannel with gradually varied
width and micro-pillar array
作者: Geng, ZX (Geng, Zhaoxin); Ju, YR (Ju, Yanrui); Wang, W (Wang, Wei); Li, ZH (Li, Zhihong)
来源出版物: SENSORS AND ACTUATORS B-CHEMICAL 卷: 180 特刊: SI 页: 122-129 DOI:
10.1016/j.snb.2012.06.064 出版年: APR 2013
摘要: A microfluidic separation device that uses the cross flow and the centrifugation effect to
separate human plasma from whole blood has been designed, fabricated and evaluated. The chip
mainly consists of a spiral channel divided into inner and outer microchannels by micropillar
arrays, which are employed to filter blood cells and plasma. The major feature of this chip is that
the width of the inner channel decreases gradually from the inlet Lathe outlet in order to
increase the separation efficiency. Clogging and jamming in this filtration structure are efficiently
alleviated. The performances of the separation device have been investigated theoretically and
experimentally. Due to high purity of plasma and compact structure, this device can be used as
either a plasma extraction device solely, or a pretreatment component that is integrated with
other microfluidic device for point-of-care diagnostics. (C) 2012 Elsevier B.V. All rights reserved.
语种: English
文献类型: Article
作者关键词: Microfluidic; Separation; Centrifugation; Plasma
KeyWords Plus: MICROFLUIDIC DEVICES; FLOW; PARTICLES
地址: [Geng, Zhaoxin; Ju, Yanrui; Wang, Wei; Li, Zhihong] Peking Univ, Inst Microelect, Natl Key
Lab Nano Micro Fabricat Technol, Beijing 100871, Peoples R China.
[Geng, Zhaoxin] Minzu Univ China, Sch Informat Engn, Beijing 100081, Peoples R China.
[Geng, Zhaoxin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing
100083, Peoples R China.
通讯作者地址: Li, ZH (通讯作者),Peking Univ, Inst Microelect, Natl Key Lab Nano Micro Fabricat
Technol, Beijing 100871, Peoples R China.
电子邮件地址: Zhhli@ime.pku.edu.cn
ISSN: 0925-4005
基金资助致谢:
基金资助机构 授权号
National Science Foundation of China 61176111
China Postdoctoral Science Foundation 20090460497
Fundamental Research Funds for the Central Universities 0910KYQN65/1112KYZY49
Science and Technology Research Funding of State Cultural Relics Bureau Cultural Relics
20110135
This work was supported by National Science Foundation of China (No. 61176111), China
Postdoctoral Science Foundation (No. 20090460497), Fundamental Research Funds for the
Central Universities (No. 0910KYQN65/1112KYZY49) and Science and Technology Research
Funding of State Cultural Relics Bureau Cultural Relics (No. 20110135).
-------------------------------------------------------------------------------第 76 条，共 234 条
标题: Growth of 4H-SiC epilayers with low surface roughness and morphological defects density
on 4 degrees off-axis substrates
作者: Dong, L (Dong, Lin); Sun, GS (Sun, Guosheng); Yu, J (Yu, Jun); Zheng, L (Zheng, Liu); Liu, XF
(Liu, Xingfang); Zhang, F (Zhang, Feng); Yan, GG (Yan, Guoguo); Li, XG (Li, Xiguang); Wang, ZG
(Wang, Zhanguo)
来 源 出 版 物 : APPLIED SURFACE SCIENCE
卷 : 270
页 : 301-306
DOI:
10.1016/j.apsusc.2013.01.018 出版年: APR 1 2013
摘要: In situ etching and epitaxial growth have been performed on 4H-SiC 4 degrees off-axis
substrates with 100 mm diameter. In situ etching process optimizations lead to obtain
step-bunching free epilayer surfaces with roughnesses of 0.2 nm and 0.8 nm, which were grown
on the substrates with and without chemical mechanical polishing, respectively. Yet the epilayer
surfaces free of step-bunching are more likely to suffer from various types of morphological
defects than the ones with step-bunching. An increase in chlorine/silicon ratio during epitaxy can
effectively suppress the appearance of defects on the step-bunching free epilayer surfaces. Using
optimized epitaxial processes, we can obtain the total morphological defects density lower than 1
cm(-2) on 4H-SiC epilayers with surface roughness of 0.2 nm. (c) 2013 Elsevier B.V. All rights
reserved.
语种: English
文献类型: Article
作者关键词: 4H-SiC; 4 degrees off-axis; Surface roughness; Morphological defects; Etching;
Epitaxial growth
KeyWords Plus: CHLORIDE-BASED CVD; EPITAXIAL SILICON-CARBIDE; SIC EPITAXY; ELECTRONICS;
IMPROVEMENT; REACTOR; DIODES; LAYERS; H-2
地址: [Dong, Lin; Sun, Guosheng; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Wang,
Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R
China.
[Sun, Guosheng; Yu, Jun; Li, Xiguang] Tianyu Semicond Technol Co Ltd, Dongguan 523000,
Peoples R China.
通讯作者地址: Dong, L (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: donglin09@semi.ac.cn
ISSN: 0169-4332
基金资助致谢:
基金资助机构 授权号
Program of (2nd) Innovative Research Teams and Leading Talents in Guangdong Province of China
National Natural Science Foundation of China 51102225
61274007
Natural Science Foundation of Beijing, China 4132074
This work was supported in part by the Program of 2011 (2nd) Innovative Research Teams and
Leading Talents in Guangdong Province of China, the National Natural Science Foundation of
China (Grant Nos. 51102225 and 61274007) and the Natural Science Foundation of Beijing, China
(Grant No. 4132074).
-------------------------------------------------------------------------------第 77 条，共 234 条
标题: Implementation of wavelength reusing upstream service based on distributed intensity
conversion in ultrawideband-over-fiber system
作者: Zheng, JY (Zheng, Jianyu); Wang, H (Wang, Hui); Wang, LX (Wang, Lixian); Zhu, NH (Zhu,
Ninghua); Liu, JG (Liu, Jianguo); Wang, SL (Wang, Sunlong)
来源出版物: OPTICS LETTERS 卷: 38 期: 7 页: 1167-1169 出版年: APR 1 2013
摘要: We propose and demonstrate a simple scheme for generating the ultrawideband (UWB)
signals and reusing the wavelength for upstream service simultaneously by using a distributed
polarization modulation-to-intensity modulation convertor. Through adjusting the static phase
difference between transverse electric and transverse magnetic modes of the optical carrier (OC)
and the angle between the polarization direction of the OC and the principal axis of the polarizers,
the UWB doublet-like signals were generated. Meanwhile, the error-free transmission of the
upstream signals with bit rate of 1.25 Gbit/s over 10 km fiber is achieved. The power penalty
resulting from the interference of downstream signals is less than 0.3 dB. (C) 2013 Optical Society
of America
语种: English
文献类型: Article
KeyWords Plus: UWB; GENERATION; MODULATION; FILTER
地址: [Zheng, Jianyu; Wang, Hui; Wang, Lixian; Zhu, Ninghua; Liu, Jianguo; Wang, Sunlong]
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 10083, Peoples R
China.
通讯作者地址: Liu, JG (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 10083, Peoples R China.
电子邮件地址: jgliu@semi.ac.cn
ISSN: 0146-9592
基金资助致谢:
基金资助机构 授权号
Program of the National Natural Science Foundation of China 61090390
61275078
National Basic Research Program of China 2012CB315702
2012CB315703
Foundation for Innovative Research Groups of the National Natural Science Foundation of China
61021003
International Cooperation and Exchange of the National Natural Science Foundation of China
60820106004
CAS Special Grant for Postgraduate Research, Innovation, and Practice
This work was partially supported by the Program of the National Natural Science Foundation of
China (Grants 61090390, 61275078), by the National Basic Research Program of China (Grants
2012CB315702, 2012CB315703), by the Foundation for Innovative Research Groups of the
National Natural Science Foundation of China (Grant 61021003), by the Funds for International
Cooperation and Exchange of the National Natural Science Foundation of China (Grant
60820106004), and by the CAS Special Grant for Postgraduate Research, Innovation, and Practice.
-------------------------------------------------------------------------------第 78 条，共 234 条
标题: Structural, morphological and magnetic characteristics of Tb-implanted GaN and AlGaN
films
作者: Gao, XG (Gao, Xingguo); Liu, C (Liu, Chao); Yin, CH (Yin, Chunhai); Tao, DY (Tao, Dongyan);
Yang, C (Yang, Cheng); Man, BY (Man, Baoyuan)
来源出版物: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE
MATERIALS 卷: 178 期: 6 页: 349-353 DOI: 10.1016/j.mseb.2012.12.005 出版年: APR 1
2013
摘要: Diluted-magnetic GaN:Tb and AlGaN:Tb films have been fabricated by implanting Tb+ ions
into c-plane (0 0 0 1) GaN and AlGaN films and a subsequent annealing process. The structural,
morphological and magnetic characteristics of the samples have been investigated by means of
X-ray diffraction (XRD), atomic force microscopy (AFM) and superconducting quantum
interference device (SQUID), respectively. The XRD and AFM analyses show that the annealing
process can effectively recover the crystalline degradation caused by implantation. According to
the SQUID analysis, both the GaN:Tb and the AlGaN:Tb films exhibit clear room-temperature
ferromagnetism. It is very interesting to find the saturation magnetization value of the AlGaN:Tb
sample is almost two times that of GaN:Tb sample. The possible origin of the ferromagnetism of
the samples was discussed briefly. (C) 2012 Elsevier B.V. All rights reserved.
语种: English
文献类型: Article
作者关键词: GaN; AlGaN; Diluted magnetic semiconductors; Ion implantation
KeyWords Plus: THIN-FILMS; ER; PHOTOLUMINESCENCE; LUMINESCENCE; MN; ALXGA1-XN;
EMISSION; HEMTS; POWER; IONS
地址: [Gao, Xingguo; Yang, Cheng; Man, Baoyuan] Shandong Normal Univ, Coll Phys & Elect, Jinan
250014, Peoples R China.
[Gao, Xingguo] Shandong Polytech Univ, Sch Sci, Jinan 250353, Peoples R China.
[Liu, Chao; Yin, Chunhai; Tao, Dongyan] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples
R China.
通讯作者地址: Liu, C (通讯作者),Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R
China.
电子邮件地址: cliu@semi.ac.cn; byman@sdnu.edu.cn
ISSN: 0921-5107
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60876004
11274204
This work was supported by the National Natural Science Foundation of China (Grant Nos.
60876004, 11274204).
-------------------------------------------------------------------------------第 79 条，共 234 条
标题: Electrical properties of the absorber layer for mid, long and very long wavelength detection
using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy
作者: Guo, XL (Guo, Xiaolu); Ma, WQ (Ma, Wenquan); Huang, JL (Huang, Jianliang); Zhang, YH
(Zhang, Yanhua); Wei, Y (Wei, Yang); Cui, K (Cui, Kai); Cao, YL (Cao, Yulian); Li, Q (Li, Qiong)
来源出版物: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 卷: 28 期: 4 文献号: 045004
DOI: 10.1088/0268-1242/28/4/045004 出版年: APR 2013
摘要: We investigate the background doping level, mobility and conductivity of the absorber
layer using the type-II InAs/GaSb structure grown by molecular beam epitaxy for the mid, long
and very long wavelength (MW, LW and VLW) bands between 77 K and room temperature. It is
found that the conduction of the absorber layer changes from p-to n-type when increasing
temperature. The transition temperature occurs at 210, 140 and 85 K and the electron activation
energy is 106, 71 and 32 meV for the MW, LW and VLW samples, respectively. The conduction
change with respect to temperature is attributed to different activation energy between the
residual electrons in the InAs layer and the residual holes in the GaSb layer. The detailed trend of
the electrical properties is also discussed.
语种: English
文献类型: Article
KeyWords Plus: TEMPERATURE-DEPENDENCE; MOBILITY; HETEROSTRUCTURES; GAS
地址: [Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao,
Yulian; Li, Qiong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Guo, XL (通讯作者),Chinese Acad Sci, Inst Semicond, Qinghua East Rd A 35,
Beijing 100083, Peoples R China.
电子邮件地址: wqma@semi.ac.cn
ISSN: 0268-1242
基金资助致谢:
基金资助机构 授权号
China's Natural Science Foundation 61176014
61290303
61021003
973 Program 2010CB327602
This work is supported by China's Natural Science Foundation Programs 61176014, 61290303 and
61021003, and 973 Program 2010CB327602.
-------------------------------------------------------------------------------第 80 条，共 234 条
标 题 : Dual-beam optically injected semiconductor laser for radio-over-fiber downlink
transmission with tunable microwave subcarrier frequency
作者: Liu, YP (Liu, Yuping); Qi, XQ (Qi, Xiaoqiong); Xie, L (Xie, Liang)
来 源 出 版 物 : OPTICS COMMUNICATIONS
卷 : 292
页 : 117-122
DOI:
10.1016/j.optcom.2012.11.008 出版年: APR 1 2013
摘要: We propose a downlink broadcast transmission scheme of radio-over-fiber (RoF) system
based on period-one (P1) dynamic of dual-beam optically injected semiconductor laser with
tunable microwave subcarrier frequency. The transmission performance of 2.5 Gb/s data in a 60
GHz RoF system is demonstrated through numerical simulations. It is found that the proposed
transmission scheme can easily generate a single-sideband (SSB) optical modulation by adjusting
the injection strength level of two master lasers (ML), which is favorable to reduce the fading
effect due to chromatic dispersion. Furthermore, influences of the pulse amplitudes and duty
cycles of the downlink data on the transmission properties are investigated. It is observed that
the oscillation of the relative power at the base station induced by fiber dispersion does not vary
apparently with the modulation parameters. Once the SSB spectrum is generated by dual-beam
optical injection, the downlink transmission performance of the proposed RoF system keeps good
stability and reliability. (C) 2012 Elsevier B.V. All rights reserved.
语种: English
文献类型: Article
作 者 关 键 词 : Downlink transmission; Microwave subcarrier; Radio-over-fiber; Dual-beam
injection; Period-one; SSB
KeyWords Plus: PERIOD-ONE OSCILLATION; PHOTONIC GENERATION; RING LASER; MODULATION;
SIGNALS
地址: [Liu, Yuping; Qi, Xiaoqiong; Xie, Liang] Chinese Acad Sci, Inst Semicond, State Key Lab
Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Qi, XQ (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: xqqi@semi.ac.cn
ISSN: 0030-4018
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61106049
61127018
Major Program of the National Natural Science Foundation of China 61090390
National Basic Research Program of China 2012CB315702
Foundation for Innovative Research Groups of the National Natural Science Foundation of China
61021003
Funds for International Cooperation and Exchange of the National Natural Science Foundation of
China 60820106004
This work was supported by the National Natural Science Foundation of China under Grant
61106049 and 61127018. We also acknowledge support from Major Program of the National
Natural Science Foundation of China (Grant No. 61090390), the National Basic Research Program
of China (Grant No. 2012CB315702), the Foundation for Innovative Research Groups of the
National Natural Science Foundation of China (Grant No. 61021003), and the Funds for
International Cooperation and Exchange of the National Natural Science Foundation of China
(Grant No. 60820106004).
-------------------------------------------------------------------------------第 81 条，共 234 条
标题: Chemical trends of magnetic interaction in Mn-doped III-V semiconductors
作者: Peng, HW (Peng, Haowei); Li, JB (Li, Jingbo); Wei, SH (Wei, Su-Huai)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 12 文 献 号 : 122409 DOI:
10.1063/1.4799164 出版年: MAR 25 2013
摘要: The trends of magnetic coupling strength in Mn-doped III-V semiconductors are explained
using a physically transparent band-coupling model, based on first-principles calculations.
According to this model, the stability of the ferromagnetism in Mn-doped III-V semiconductors
should increase with both the strength of p-d coupling and an effective coupling range parameter,
alpha. However, these two quantities counteract to each other, i.e., increased p-d coupling
strength means a decreased alpha value. Therefore, this competition will lead to the
non-monotonic variation of ferromagnetic interaction in Mn-doped common-cation III-V
semiconductors as the anion becomes heavier. Our results suggest that Mn-doped GaAs and AlAs
are optimal materials for high T-C spintronics, in good agreement with experimental observations.
(C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799164]
语种: English
文献类型: Article
KeyWords Plus: FERROMAGNETISM; MODEL
地址: [Peng, Haowei; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, Beijing 100083, Peoples R China.
[Wei, Su-Huai] Natl Renewable Energy Lab, Golden, CO 80401 USA.
通 讯 作 者 地 址 : Peng, HW ( 通 讯 作 者 ),Chinese Acad Sci, Inst Semicond, State Key Lab
Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: jbli@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
Chinese Academy of Sciences
U.S. Department of Energy DE-AC36-08GO28308
J. Li gratefully acknowledges financial support from the "One-Hundred Talents Plan" of the
Chinese Academy of Sciences. The work at NREL was supported by the U.S. Department of Energy
under Contract No. DE-AC36-08GO28308.
-------------------------------------------------------------------------------第 82 条，共 234 条
标题: Electronic origin of the conductivity imbalance between covalent and ionic amorphous
semiconductors
作者: Deng, HX (Deng, Hui-Xiong); Wei, SH (Wei, Su-Huai); Li, SS (Li, Shu-Shen); Li, JB (Li, Jingbo);
Walsh, A (Walsh, Aron)
来 源 出 版 物 : PHYSICAL REVIEW B
卷 : 87
期 : 12
文 献 号 : 125203
DOI:
10.1103/PhysRevB.87.125203 出版年: MAR 21 2013
摘要: Amorphous semiconductors are known to give rise to greatly reduced conductivity relative
to their crystalline counterparts, which makes the recent development of amorphous oxide
semiconductors with high electron mobility unexpected. Using first-principles molecular
dynamics and electronic structure simulations, we have analyzed the electronic and optical
properties of covalent and ionic oxide amorphous semiconductors. We observe that in covalent
systems, amorphization introduces deep defect states inside the gap, resulting in a substantial
deterioration of electrical conductivity. In contrast, in ionic systems, such as the transparent
conducting oxide ZnO, amorphization does not create deep carrier-recombination centers, so the
oxides still exhibit good conductivity and visible transparency relative to the crystalline phases.
The origin of the conductivity imbalance between covalent and ionic amorphous semiconductors
can be explained using a band coupling mechanism. DOI: 10.1103/PhysRevB.87.125203
语种: English
文献类型: Article
KeyWords Plus: INITIO MOLECULAR-DYNAMICS; ROOM-TEMPERATURE; SILICON; OXIDE; METALS;
SOLIDS
地址: [Deng, Hui-Xiong; Wei, Su-Huai] Natl Renewable Energy Lab, Golden, CO 80401 USA.
[Li, Shu-Shen; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, Beijing 100083, Peoples R China.
[Walsh, Aron] Univ Bath, Ctr Sustainable Chem Technol, Bath BA2 7AY, Avon, England.
[Walsh, Aron] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England.
通讯作者地址: Deng, HX (通讯作者),Natl Renewable Energy Lab, Golden, CO 80401 USA.
ISSN: 1098-0121
基金资助致谢:
基金资助机构 授权号
U.S. Department of Energy DE-AC36-08GO28308
National Basic Research Program of China (973 Program) G2009CB929300
National Natural Science Foundation of China 61121491
11104264
The work at National Renewable Energy Laboratory was supported by the U.S. Department of
Energy under Contract No. DE-AC36-08GO28308. The work at Institute of Semiconductors,
Chinese Academy of Sciences, was supported by the National Basic Research Program of China
(973 Program) Grant No. G2009CB929300, and the National Natural Science Foundation of China
under Grants No. 61121491, and No. 11104264.
-------------------------------------------------------------------------------第 83 条，共 234 条
标题: Pseudomagnetoexcitons in strained graphene bilayers without external magnetic fields
作者: Wang, ZG (Wang, Zhigang); Fu, ZG (Fu, Zhen-Guo); Zheng, FW (Zheng, Fawei); Zhang, P
(Zhang, Ping)
来 源 出 版 物 : PHYSICAL REVIEW B
卷 : 87
期 : 12
文 献 号 : 125418
DOI:
10.1103/PhysRevB.87.125418 出版年: MAR 18 2013
摘 要 : We propose a strained graphene double-layer (SGDL) system for detecting
pseudomagnetoexcitons (PME) in the absence of external magnetic fields. The carriers in each
graphene layer experience different strong pseudomagnetic fields (PMFs) due to strain
engineering, which give rise to Landau quantization. The pseudo-Landau levels of electron-hole
pairs under inhomogeneous PMFs in the SGDL are obtained analytically in the absence of
Coulomb interactions. Based on the derived optical absorption selection rule for PMEs, we
interpret the optical absorption spectra as indicating the formation of Dirac-type PMEs. We also
predict that in the presence of inhomogeneous PMFs, the superfluidity-normal phase-transition
temperature of PMEs is greater than that under homogeneous PMFs. DOI:
10.1103/PhysRevB.87.125418
语种: English
文献类型: Article
KeyWords Plus: ELECTRONIC-PROPERTIES; CONDENSATION; COHERENCE; EXCITONS
地址: [Wang, Zhigang; Fu, Zhen-Guo; Zheng, Fawei; Zhang, Ping] Inst Appl Phys & Computat Math,
LCP, Beijing 100088, Peoples R China.
[Fu, Zhen-Guo] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.
[Zhang, Ping] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.
通讯作者地址: Zhang, P (通讯作者),Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing
100088, Peoples R China.
电子邮件地址: zhang_ping@iapcm.ac.cn
ISSN: 1098-0121
基金资助致谢:
基金资助机构 授权号
Natural Science Foundation of China 90921003
10904005
11274049
11004013
National Basic Research Program of China (973 Program) 2009CB929103
This work was supported by the Natural Science Foundation of China under Grants No. 90921003,
No. 10904005, No. 11274049, and No. 11004013 and by the National Basic Research Program of
China (973 Program) under Grant No. 2009CB929103.
-------------------------------------------------------------------------------第 84 条，共 234 条
标题: Wavelength and Mode-Spacing Tunable Dual-Mode Distributed Bragg Reflector Laser
作者: Yu, LQ (Yu, Liqiang); Lu, D (Lu, Dan); Zhao, LJ (Zhao, Lingjuan); Li, Y (Li, Yan); Ji, C (Ji, Chen);
Pan, JQ (Pan, Jiaoqing); Zhu, HL (Zhu, Hongliang); Wang, W (Wang, Wei)
来源出版物: IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 6 页: 576-579 DOI:
10.1109/LPT.2013.2243723 出版年: MAR 15 2013
摘要: In this letter, we report a novel mode-beating distributed Bragg reflector (DBR) laser with
dual-mode output. Both the working wavelengths and mode spacing of the dual-mode laser can
be tuned when the currents injected into the DBR laser are adjusted. The tuning ranges of the
laser wavelength and mode-beating frequency are [1527.20 nm, 1531.04 nm] and [91.88 GHz,
94.02 GHz], respectively. A fourth harmonic injection locking is also demonstrated to achieve a
synchronized RF output at 93.23 GHz. The phase noise of the RF output is measured by using the
down-conversion method. A single sideband phase noise of 96.92 dBc/Hz with 1-MHz offset at a
down-converted frequency of 13.23 GHz is achieved.
语种: English
文献类型: Article
作者关键词: Distributed Bragg reflector laser; injection locking; optical microwave generation;
wavelengths tuning
KeyWords Plus: OPTICAL CLOCK RECOVERY; FEEDBACK LASER; DIODE
地址: [Yu, Liqiang; Lu, Dan; Zhao, Lingjuan; Ji, Chen; Pan, Jiaoqing; Zhu, Hongliang; Wang, Wei]
Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
[Li, Yan] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing
100876, Peoples R China.
通讯作者地址: Yu, LQ (通讯作者),Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing
100083, Peoples R China.
电 子 邮 件 地 址 : yuliqiang10@semi.ac.cn; ludan@semi.ac.cn; ljzhao@semi.ac.cn;
liyan1980@bupt.edu.cn;
chenji@semi.ac.cn;
jqpan@semi.ac.cn;
zhuhl@red.semi.ac.cn;
wwang@semi.ac.cn
ISSN: 1041-1135
基金资助致谢:
基金资助机构 授权号
National 973 Program 2011CB301702
National 863 Project 2011AA010303
2012AA012203
National Natural Science Foundation of China 61021003
61090392
61201103
61274045
This work was supported in part by the National 973 Program under Grant 2011CB301702, in part
by the National 863 Project under Grant 2011AA010303 and Grant 2012AA012203, and in part by
the National Natural Science Foundation of China under Grant 61021003, Grant 61090392, Grant
61201103, and Grant 61274045.
-------------------------------------------------------------------------------第 85 条，共 234 条
标题: Hybrid III -V/silicon single-mode laser with periodic microstructures
作者: Zhang, YJ (Zhang, Yejin); Qu, HW (Qu, Hongwei); Wang, HL (Wang, Hailing); Zhang, SRGL
(Zhang, Siriguleng); Ma, SD (Ma, Shaodong); Qi, AY (Qi, Aiyi); Feng, ZG (Feng, Zhigang); Peng, HL
(Peng, Hongling); Zheng, WH (Zheng, Wanhua)
来源出版物: OPTICS LETTERS 卷: 38 期: 6 页: 842-844 出版年: MAR 15 2013
摘要: In this Letter, a III-V/silicon hybrid single-mode laser operating at C band for photonic
integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on
insulator through wafer to wafer directly. The mode selected mechanism based on a hybrid
III-V/silicon straight cavity with periodic microstructures is applied, which only need low cost
i-line projection photolithography in the whole technological process. At room temperature, we
obtain 0.62 mW output power in continuous-wave. The side mode suppression ratio of larger
than 20 dB is obtained from experiments. Over 10,000 h lifetime can be reached. (C) 2013 Optical
Society of America
语种: English
文献类型: Article
KeyWords Plus: SILICON
地址: [Zhang, Yejin; Qu, Hongwei; Wang, Hailing; Zhang, Siriguleng; Ma, Shaodong; Qi, Aiyi; Feng,
Zhigang; Peng, Hongling; Zheng, Wanhua] Chinese Acad Sci, Inst Semicond, State Key Lab
Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Zhang, YJ (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: yjzhang@semi.ac.cn
ISSN: 0146-9592
基金资助致谢:
基金资助机构 授权号
Chinese National Key Basic Research Special Fund 2012CB933501
2011CB922002
NSFC 61274070
61021003
61234004
61025025
61137003
6083 8003
National High Technology Research and Development Program of China 2012AA 012202
This work is supported by the Chinese National Key Basic Research Special Fund (Grant Nos.
2012CB933501 and 2011CB922002), the NSFC (Grant Nos. 61274070, 61021003, 61234004,
61025025, 61137003, and 6083 8003) and the National High Technology Research and
Development Program of China (Grant No. 2012AA 012202).
-------------------------------------------------------------------------------第 86 条，共 234 条
标题: Undetectable quantum transfer through a continuum
作者: Ping, J (Ping, Jing); Ye, Y (Ye, Yin); Xu, LT (Xu, Luting); Li, XQ (Li, Xin-Qi); Yan, YJ (Yan, YiJing);
Gurvitz, S (Gurvitz, Shmuel)
来 源 出 版 物 : PHYSICS LETTERS A
卷 : 377
期: 9
页 : 676-681
DOI:
10.1016/j.physleta.2013.01.010 出版年: MAR 15 2013
摘要: We demonstrate that a quantum particle, initially prepared in a quantum well, can
propagate through a reservoir with a continuous spectrum and reappear in a distant well without
being registered in the reservoir. It is shown that such a passage through the reservoir takes place
even if the latter is continuously monitored. We discuss a possible experimental realization of
such a teleportation phenomenon in mesoscopic systems. (c) 2013 Elsevier B.V. All rights
reserved.
语种: English
文献类型: Article
作者关键词: Quantum transfer; Null-result measurements
地址: [Ping, Jing; Ye, Yin; Li, Xin-Qi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, Beijing 100083, Peoples R China.
[Xu, Luting; Li, Xin-Qi] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.
[Yan, YiJing] Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China.
[Gurvitz, Shmuel] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.
[Gurvitz, Shmuel] Weizmann Inst Sci, Dept Particle Phys & Astrophys, IL-76100 Rehovot, Israel.
通讯作者地址: Li, XQ (通讯作者),Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R
China.
电子邮件地址: xqli@red.semi.ac.cn
ISSN: 0375-9601
基金资助致谢:
基金资助机构 授权号
Israel Science Foundation 711091
NNSF of China 101202101
10874176
Major State Basic Research Project of China 2011CB808502
2012CB932704
Fundamental Research Funds for the Central Universities of China
S.G. acknowledges the Beijing Normal University, the Institute of Semiconductors (CAS) and the
Beijing Computational Science Research Center, for supporting his visit. This work was supported
by the Israel Science Foundation under grant No. 711091, the NNSF of China under grants No.
101202101 & 10874176, the Major State Basic Research Project of China under grants No.
2011CB808502 & 2012CB932704, and the Fundamental Research Funds for the Central
Universities of China.
-------------------------------------------------------------------------------第 87 条，共 234 条
标题: Raman spectroscopy of shear and layer breathing modes in multilayer MoS2
作者: Zhang, X (Zhang, X.); Han, WP (Han, W. P.); Wu, JB (Wu, J. B.); Milana, S (Milana, S.); Lu, Y
(Lu, Y.); Li, QQ (Li, Q. Q.); Ferrari, AC (Ferrari, A. C.); Tan, PH (Tan, P. H.)
来 源 出 版 物 : PHYSICAL REVIEW B
卷 : 87
期 : 11
文 献 号 : 115413
DOI:
10.1103/PhysRevB.87.115413 出版年: MAR 13 2013
摘要: We study by Raman scattering the shear and layer breathing modes in multilayer MoS2.
These are identified by polarization measurements and symmetry analysis. Their positions
change significantly with the number of layers, with different scaling for odd and even layers. A
chain model can explain the results, with general applicability to any layered material, allowing a
reliable diagnostic of their thickness.
语种: English
文献类型: Article
KeyWords Plus: TRANSITION-METAL DICHALCOGENIDES; ELECTRONIC-STRUCTURE; MONOLAYER
MOS2; VALLEY POLARIZATION; PHONON DISPERSION; HEXAGONAL MOS2; CRYSTALS; GRAPHENE;
SCATTERING; GRAPHITE
地址: [Zhang, X.; Han, W. P.; Wu, J. B.; Milana, S.; Lu, Y.; Li, Q. Q.; Tan, P. H.] Chinese Acad Sci, Inst
Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
[Milana, S.; Ferrari, A. C.] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 OFA,
England.
通讯作者地址: Zhang, X (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, Beijing 100083, Peoples R China.
电子邮件地址: acf26@eng.cam.ac.uk; phtan@semi.ac.cn
ISSN: 1098-0121
基金资助致谢:
基金资助机构 授权号
special funds for Major State Basic Research of China 2009CB929301
National Natural Science Foundation of China 11225421
10934007
EU
EPSRC EP/K01711X/1
EP/K017144/1
Royal Society
We acknowledge support from the special funds for Major State Basic Research of China,
Contract No. 2009CB929301, the National Natural Science Foundation of China, Grants No.
11225421 and No. 10934007, EU grants NANOPOTS and GENIUS, EPSRC Grants No. EP/K01711X/1,
No. EP/K017144/1, and a Royal Society Wolfson Research Merit Award.
-------------------------------------------------------------------------------第 88 条，共 234 条
标题: Electron spin dynamics of ferromagnetic Ga1-xMnxAs across the insulator-to-metal
transition
作者: Yue, H (Yue, Han); Zhao, CB (Zhao, Chunbo); Gao, HX (Gao, Haixia); Wang, HL (Wang,
Hailong); Yu, XZ (Yu, Xuezhe); Zhao, JH (Zhao, Jianhua); Zhang, XH (Zhang, Xinhui)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 10 文 献 号 : 102412 DOI:
10.1063/1.4795535 出版年: MAR 11 2013
摘要: Electron spin dephasing dynamics of ferromagnetic Ga1-xMnxAs with Mn concentration
spanning from 0.5% to 15% across the insulator-to-metal transition is systematically studied using
time-resolved magneto-optical Kerr effect measurements. In the insulating Ga1-xMnxAs, the
impurity scattering and s-d exchange scattering induced by the magnetic impurity Mn ions are
responsible for the electron spin dephasing process. While in the metallic and near metallic
regime, the electron-electron Coulomb scattering becomes dominant over the impurity
scattering on the spin dephasing process with D'yakonov-Perel' mechanism. Our findings are
important for better engineering of Mn impurity doping in order to achieve potential
Ga1-xMnxAs-based spintronics application. (C) 2013 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4795535]
语种: English
文献类型: Article
KeyWords Plus: SEMICONDUCTORS
地址: [Yue, Han; Zhao, Chunbo; Gao, Haixia; Wang, Hailong; Yu, Xuezhe; Zhao, Jianhua; Zhang,
Xinhui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing
100083, Peoples R China.
通讯作者地址: Yue, H (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: xinhuiz@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CB922200
National Natural Science Foundation of China 10974195
60836002
We gratefully acknowledge valuable discussions with Professor M. W. Wu and Professor M. Q.
Weng. This work was supported by the National Basic Research Program of China (No.
2011CB922200) and the National Natural Science Foundation of China (Nos. 10974195,
60836002).
-------------------------------------------------------------------------------第 89 条，共 234 条
标题: 1.82-mu m distributed feedback lasers with InGaAs/InGaAsP multiple-quantum wells for a
H2O sensing system
作者: Yu, HY (Yu, Hongyan); Pan, JQ (Pan, Jiaoqing); Shao, YB (Shao, Yongbo); Wang, BJ (Wang,
Baojun); Zhou, DB (Zhou, Daibing); Wang, W (Wang, Wei)
来 源 出 版 物 : CHINESE OPTICS LETTERS 卷 : 11 期 : 3 文 献 号 : 031404 DOI:
10.3788/COL201311.031404 出版年: MAR 10 2013
摘要: High-strained InGaAs/InGaAsP multiple quantum wells (MQWs) distributed feedback (DFB)
lasers, fabricated using metal organic chemical vapor deposition, are presented at 1.82 mu m
with a high side-mode-suppression ratio of 49.53 dB. The current- and temperature-tuning rates
of the DFB mode wavelength are 0.01 nm/mA and 0.13 nm/degrees C, respectively. A
characteristic temperature of 51 K is also confirmed. The DFB laser demonstrates good
performance and can be applied to H2O concentration sensing.
语种: English
文献类型: Article
KeyWords Plus: AUGER RECOMBINATION; PERFORMANCE; THRESHOLD
地址: [Yu, Hongyan; Pan, Jiaoqing; Shao, Yongbo; Wang, Baojun; Zhou, Daibing; Wang, Wei]
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: Pan, JQ (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: jqpan@semi.ac.cn
ISSN: 1671-7694
基金资助致谢:
基金资助机构 授权号
National "863" Project of China 2012AA012203
National "973" Program of China 2011CB301702
This work was supported by the National "863" Project of China (No. 2012AA012203) and the
National "973" Program of China (No. 2011CB301702).
-------------------------------------------------------------------------------第 90 条，共 234 条
标题: InGaN-based vertical light-emitting diodes with acid-modified graphene transparent
conductor and highly reflective membrane current blocking layer
作者: Wang, LC (Wang, Liancheng); Zhang, YY (Zhang, Yiyun); Li, X (Li, Xiao); Liu, ZQ (Liu, Zhiqiang);
Zhang, L (Zhang, Lian); Guo, EQ (Guo, Enqing); Yi, XY (Yi, Xiaoyan); Zhu, HW (Zhu, Hongwei); Wang,
GH (Wang, Guohong)
来 源 出 版 物 : PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND
ENGINEERING SCIENCES
卷 : 469
期 : 2151
文 献 号 : 20120652
DOI:
10.1098/rspa.2012.0652 出版年: MAR 8 2013
摘要: Vertical light-emitting diodes (VLEDs) with a highly reflective membrane (HRM) as current
blocking layer (CBL) and a graphene transparent conductive layer (TCL) have been fabricated and
characterized. High reflectance of HRM and high transmittance of graphene ensure less loss of
the optical power. The VLEDs show improved optical output and less efficiency droop, thanks to
the current spreading effect of HRM CBL and graphene TCL by preventing current crowding under
the top electrode and thus increasing the internal and external quantum efficiency. With further
acid modification, forward electrical characteristics of VLEDs are improved.
语种: English
文献类型: Article
作者关键词: graphene; solid-state lighting; gallium nitride
KeyWords Plus: SOLAR-CELLS; EFFICIENCY; EMISSION; POWER
地址: [Wang, Liancheng; Zhang, Yiyun; Liu, Zhiqiang; Zhang, Lian; Guo, Enqing; Yi, Xiaoyan; Wang,
Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing
100083, Peoples R China.
[Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Dept Mech Engn, Beijing 100084, Peoples R China.
[Zhu, Hongwei] Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China.
通讯作者地址: Zhu, HW (通讯作者),Tsinghua Univ, Dept Mech Engn, Beijing 100084, Peoples R
China.
电子邮件地址: spring@semi.ac.cn; hongweizhu@tsinghua.edu.cn
ISSN: 1364-5021
基金资助致谢:
基金资助机构 授权号
National High Technology Programme of China 2011AA03A105
2011AA03A103
National Natural Science Foundation of China 60806001
50972067
National Basic Research Programme of China 2011CB301904
2011CB013000
This work was supported by the National High Technology Programme of China (2011AA03A105
and 2011AA03A103), National Natural Science Foundation of China (60806001 and 50972067)
and National Basic Research Programme of China (2011CB301904 and 2011CB013000).
-------------------------------------------------------------------------------第 91 条，共 234 条
标题: Crystal structures and metastability of carbon-boron compounds C3B and C5B
作者: Mikhaylushkin, AS (Mikhaylushkin, Arkady S.); Zhang, XW (Zhang, Xiuwen); Zunger, A
(Zunger, Alex)
来 源 出 版 物 : PHYSICAL REVIEW B
卷 : 87
期: 9
文 献 号 : 094103
DOI:
10.1103/PhysRevB.87.094103 出版年: MAR 7 2013
摘要: The recent discovery of the diamondlike C3B and C5B compounds has raised hopes of
revealing interesting properties and also elicits questions about the stability of such compounds.
Using our implementation of the evolutionary global space-group optimization method, we have
found ordered structural models for C3B (layered hexagonal) and C5B (diamondlike) with lower
energies than previously obtained and revealing unusual layer-stacking sequences. The
compounds are less stable than a mixture of freestanding lowest-energy phases of B, C, and C4B,
thus C3B and C5B are not ground-state structures. Nevertheless, disordered diamondlike C3B and
C5B can be formed exothermically at high temperature in the reaction [graphitelike C3B] + 2C ->
[diamondlike C5B] and [graphitelike C3B] -> [diamondlike C3B]. Thus, the disorder on the C and B
sites of diamondlike C3B and C5B is responsible for the observed phases. DOI:
10.1103/PhysRevB.87.094103
语种: English
文献类型: Article
KeyWords Plus: GRAPHITE-LIKE MATERIAL; AB-INITIO; ELECTRON-GAS; BC3; DIAMOND
地址: [Mikhaylushkin, Arkady S.] Chinese Acad Sci, Inst Semicond, SKSLM, Beijing 100083,
Peoples R China.
[Mikhaylushkin, Arkady S.; Zhang, Xiuwen] Natl Renewable Energy Lab, Golden, CO 80401 USA.
[Zhang, Xiuwen] Colorado Sch Mines, Golden, CO 80401 USA.
[Zunger, Alex] Univ Colorado, Boulder, CO 80309 USA.
通讯作者地址: Mikhaylushkin, AS (通讯作者),Chinese Acad Sci, Inst Semicond, SKSLM, POB 912,
Beijing 100083, Peoples R China.
电子邮件地址: Xiuwen.Zhang@nrel.gov; alex.zunger@colorado.edu
ISSN: 1098-0121
基金资助致谢:
基金资助机构 授权号
US Department of Energy, Office of Science, Basic Energy Sciences, Energy Frontier Research
Centers DE-AC36-08GO28308
Office of Science of the US Department of Energy DE-AC02-05CH11231
National Renewable Energy Laboratory Computational Sciences Center
Office of Energy Efficiency and Renewable Energy of the US Department of Energy
DE-AC36-08GO28308
CAS Fellowship for Young International Scientists 2012Y1GA0001
NSFC Research Fellowship for International Young Scientists 112111160
Swedish National Infrastructure for Computing (SNIC)
This work was supported by the US Department of Energy, Office of Science, Basic Energy
Sciences, Energy Frontier Research Centers, under Contract No. DE-AC36-08GO28308 to NREL.
X.Z. also acknowledges the administrative support of REMRSEC at the Colorado School of Mines,
Golden, Colorado. This research used resources of the National Energy Research Scientific
Computing Center, which is supported by the Office of Science of the US Department of Energy
under Contract DE-AC02-05CH11231 as well as capabilities of the National Renewable Energy
Laboratory Computational Sciences Center, which is supported by the Office of Energy Efficiency
and Renewable Energy of the US Department of Energy under Contract DE-AC36-08GO28308.
A.S.M. is thankful to CAS Fellowship for Young International Scientists (2012Y1GA0001) and NSFC
Research Fellowship for International Young Scientists (112111160). The simulations are partly
done in the National Supercomputer Centre, Linkoping, Sweden with the support of Swedish
National Infrastructure for Computing (SNIC).
-------------------------------------------------------------------------------第 92 条，共 234 条
标题: Spin and orbital splitting in ferromagnetic contacted single wall carbon nanotube devices
作者: Wang, KY (Wang, K. Y.); Blackburn, AM (Blackburn, A. M.); Wang, HF (Wang, H. F.);
Wunderlich, J (Wunderlich, J.); Williams, DA (Williams, D. A.)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 9 文 献 号 : 093508 DOI:
10.1063/1.4794535 出版年: MAR 4 2013
摘要: We observed the coulomb blockade phenomena in ferromagnetic contacting single wall
semiconducting carbon nanotube devices. No obvious Coulomb peaks shift was observed with
existing only the Zeeman splitting at 4K. Combining with other effects, the ferromagnetic leads
prevent the orbital spin states splitting with magnetic field up to 2 T at 4K. With increasing
magnetic field further, both positive or negative coulomb peaks shift slopes are observed
associating with clockwise and anticlockwise orbital state splitting. The strongly
suppressed/enhanced of the conductance has been observed associating with the magnetic field
induced orbital states splitting/converging. (C) 2013 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4794535]
语种: English
文献类型: Article
KeyWords Plus: TRANSPORT
地址: [Wang, K. Y.; Wang, H. F.] Inst Semicond, SKLSM, Beijing 100083, Peoples R China.
[Blackburn, A. M.; Wunderlich, J.; Williams, D. A.] Hitachi Cambridge Lab, Cambridge CB3 0HE,
England.
通讯作者地址: Wang, KY (通讯作者),Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R
China.
电子邮件地址: kywang@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
"973 Program" 2011CB922200
EU "CANAPE"
NSFC 10974196
61225021
Chinese Academy of Sciences
This project was supported by "973 Program" No. 2011CB922200, EU "CANAPE," NSFC Grant
10974196 and 61225021. K.Y.W. acknowledges support of Chinese Academy of Sciences "100
talent program." K.Y.W. also would like to thank P. E. Lindelof and H. I. Jorgensen for
collaborations.
-------------------------------------------------------------------------------第 93 条，共 234 条
标 题 : Spectra of circular and linear photogalvanic effect at inter-band excitation in
In0.15Ga0.85As/Al0.3Ga0.7As multiple quantum wells
作者: Yu, JL (Yu, Jinling); Chen, YH (Chen, Yonghai); Cheng, SY (Cheng, Shuying); Lai, YF (Lai,
Yunfeng)
来源出版物: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 卷: 49 页: 92-96
DOI: 10.1016/j.physe.2013.01.018 出版年: MAR 2013
摘要: Spectra of circular photogalvanic effect (CPGE) and linear photogalvanic effect (LPGE) for
inter-band transition have been experimentally investigated in In0.15Ga0.85As/Al0.3Ga0.7As
multiple quantum wells (QWs) at room temperature. The CPGE and LPGE spectra are quite
similar during the spectral region corresponding to the transitions 1e1hh (the first valence
subband of heavy hole to the first conduction band) and 1e2hh, which is also similar to that of
the photoconductivity. Comparing the photocurrent induced by LPGE and CPGE along [1 1 0] and
[1 (1) over bar 0] directions, we obtain the anisotropic ratio of the linear photogalvanic tensor chi
and circular photogalvanic tensor gamma to be chi(xxz)/chi(yyz) = 3.6 and gamma(xy)/gamma(yx)
= 1.3 (x parallel to[1 1 0] and y parallel to[1 (1) over bar 0]), which indicate that the symmetry of
the structure belongs to C-2v point group and the Rashba spin splitting is the dominant
mechanism to induce the k-linear spin splitting of the subband in the
In0.15Ga0.85As/Al0.3Ga0.7As QWs. The magnitude of the LPGE is nearly at the same order with
that of the CPGE for the investigated spectral region at room temperature. (C) 2013 Elsevier B.V.
All rights reserved.
语种: English
文献类型: Article
KeyWords Plus: SEMICONDUCTOR
地址: [Yu, Jinling; Cheng, Shuying; Lai, Yunfeng] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou
350108, Fujian Province, Peoples R China.
[Yu, Jinling; Cheng, Shuying; Lai, Yunfeng] Fuzhou Univ, Inst Micro Nano Devices & Solar Cells,
Fuzhou 350108, Fujian Province, Peoples R China.
[Chen, Yonghai] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,
Peoples R China.
通讯作者地址: Yu, JL (通讯作者),Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian
Province, Peoples R China.
电子邮件地址: jlyu@semi.ac.cn; yhchen@semi.ac.cn
ISSN: 1386-9477
基金资助致谢:
基金资助机构 授权号
973 program 2012CB921304
2012CB619306
National Natural Science Foundation of China 60990313
The work was supported by the 973 program (2012CB921304, 2012CB619306) and the National
Natural Science Foundation of China (No. 60990313).
-------------------------------------------------------------------------------第 94 条，共 234 条
标题: Splitting of electromagnetically induced transparency window and appearing of gain due to
radio frequency field
作者: Li, XL (Li Xiao-Li); Shang, YX (Shang Ya-Xuan); Sun, J (Sun Jiang)
来 源 出 版 物 : ACTA PHYSICA SINICA
卷 : 62
期: 6
文 献 号 : 064202
DOI:
10.7498/aps.62.064202 出版年: MAR 2013
摘要: Two resonant radio frequency fields are added to lambda three-level system in this paper.
By discussing the behaviors of probing field absorption profiles under the effect of different Rabi
frequencies of two radio frequency fields, the splitting of electromagnetically induced
transparency (EIT) can be seen and the overlapping between EIT and gain can be obtained. The
results show that the two radio frequency fields have different control functions on the system.
The radio frequency field which interacts with hyperfine levels of ground state plays a role in the
splitting of EIT, but the radio frequency field which interacts with hyperfine levels of excited state
does not work on it. In addition only when the Rabi frequency of radio frequency field interacting
with hyperfine levels of ground state is greater than with hyperfine levels of excited state, can the
new features about the overlapping between EIT and gain be obtained.
语种: Chinese
文献类型: Article
作者关键词: radio frequency field; electromagnetically induced transparency; gain; hyperfine
levels
KeyWords Plus: ATOMS
地址: [Li Xiao-Li; Shang Ya-Xuan; Sun Jiang] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002,
Peoples R China.
[Li Xiao-Li] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing
100083, Peoples R China.
通讯作者地址: Li, XL (通讯作者),Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R
China.
电子邮件地址: xiaolixiaoli001@yahoo.com.cn
ISSN: 1000-3290
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 10804025
Natural Science Foundation of Hebei Province, China F2010000306
Scientific Project of Higher Education Institutions of Hebei Province, China 2011114
Project supported by the Young Scientists Fund of National Natural Science Foundation of China
(Grant No. 10804025), the Natural Science Foundation of Hebei Province, China (Grant No.
F2010000306), and the Scientific Project of Higher Education Institutions of Hebei Province,
China (Grant No. 2011114).
-------------------------------------------------------------------------------第 95 条，共 234 条
标题: High efficiency and high power continuous-wave semiconductor terahertz lasers at similar
to 3.1 THz
作者: Liu, JQ (Liu, Junqi); Chen, JY (Chen, Jianyan); Wang, T (Wang, Tao); Li, YF (Li, Yanfang); Liu,
FQ (Liu, Fengqi); Li, L (Li, Lu); Wang, LJ (Wang, Lijun); Wang, ZG (Wang, Zhanguo)
来源出版物: SOLID-STATE ELECTRONICS 卷: 81 页: 68-71 DOI: 10.1016/j.sse.2013.01.014
出版年: MAR 2013
摘要: Continuous-wave operation of semiconductor terahertz quantum cascade lasers at similar
to 3.1 THz based on a bound-to-continuum transition design is described. The material physics
and device performance is analyzed in detail. With good injection efficiency in the upper single
isolated radiative state and efficient extraction from the lower radiative state, the maximum
operating temperature is in excess of 90 K in pulsed and 70 K in continuous-wave mode. The peak
power of 112.5 mW was obtained at 10 K in pulsed mode, indicating similar to 36 photons per
injected electron for 120 periods of active region. In continuous-wave operation, collected power
of 62 mW and 22 photons per electron was also achieved at 10 K. (C) 2013 Elsevier Ltd. All rights
reserved.
语种: English
文献类型: Article
作者关键词: Terahertz; Semiconductor laser; Quantum cascade laser; Continuous-wave
KeyWords Plus: QUANTUM-CASCADE LASERS
地址: [Liu, Junqi; Chen, Jianyan; Wang, Tao; Li, Yanfang; Liu, Fengqi; Li, Lu; Wang, Lijun; Wang,
Zhanguo] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R
China.
[Liu, Junqi; Chen, Jianyan; Wang, Tao; Li, Yanfang; Liu, Fengqi; Wang, Lijun; Wang, Zhanguo]
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.
[Li, Yanfang] Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China.
通讯作者地址: Liu, JQ (通讯作者),Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond,
Beijing 100083, Peoples R China.
电子邮件地址: jqliu@semi.ac.cn; fqliu@red.semi.ac.cn
ISSN: 0038-1101
基金资助致谢:
基金资助机构 授权号
100 Talents Program of The Chinese Academy of Sciences 1731110000012
National Natural Science Foundation of China 60736031
60806018
60906026
Special-funded program on national key scientific instruments and equipment development
2011YQ13001802-4
The authors acknowledge Ping Liang, Ying Hu and Lei Jiang for their help in device processing.
This work was supported in part by 100 Talents Program of The Chinese Academy of Sciences
(1731110000012), the National Natural Science Foundation of China (60736031, 60806018,
60906026), and Special-funded program on national key scientific instruments and equipment
development (2011YQ13001802-4).
-------------------------------------------------------------------------------第 96 条，共 234 条
标题: EIT and MOLLOW Spectrum in N-Type Four-Level System
作者: Li, XL (Li Xiao-li); Meng, XD (Meng Xu-dong); Yang, ZC (Yang Zi-cai); Sun, J (Sun Jiang)
来源出版物: SPECTROSCOPY AND SPECTRAL ANALYSIS 卷: 33 期: 3 页: 590-594 DOI:
10.3964/j.issn.1000-0593(2013)03-0590-05 出版年: MAR 2013
摘要: An N-type four level system where two coupling fields interact with two separate optical
transitions was constructed in the present paper. By discussing the behaviors of probing field
absorption profiles under the effect of different Rabi frequencies of two coupling fields, EIT,
Mollow and Autler-Townes doublet can be seen and mutual transformation between them can
be obtained. Multiple transition channels in the system were found and the results show that the
system can be divided into several subsystems according to the transition channels. Quantum
interference between different transition channels can be realized through different dividing
methods, so three nonlinear effects with different generating conditions and physical nature can
be seen in the system.
语种: Chinese
文献类型: Article
作者关键词: Electromagnetically induced transparency(EIT); Mollow spectrum; Coupling field;
N-type four level system
KeyWords Plus: ELECTROMAGNETICALLY-INDUCED TRANSPARENCY; SLOW LIGHT; MODULATION
地址: [Li Xiao-li; Yang Zi-cai; Sun Jiang] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002,
Peoples R China.
[Li Xiao-li] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing
100083, Peoples R China.
[Meng Xu-dong] Hebei North Univ, Dept Phys, Zhangjiakou 075000, Peoples R China.
通讯作者地址: Li, XL (通讯作者),Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R
China.
电子邮件地址: xiaolixiaoli001@yahoo.com.cn
ISSN: 1000-0593
-------------------------------------------------------------------------------第 97 条，共 234 条
标题: Raman Spectra Analysis of GaN : Er Films Prepared by Ion Implantation
作者: Tao, DY (Tao Dong-yan); Liu, C (Liu Chao); Yin, CH (Yin Chun-hai); Zeng, YP (Zeng Yi-ping)
来源出版物: SPECTROSCOPY AND SPECTRAL ANALYSIS 卷: 33 期: 3 页: 699-703 DOI:
10.3964/j.issn.1000-0593(2013)03-0699-05 出版年: MAR 2013
摘要: U-, n- and p-GaN Er films were prepared by ion implantation method. Three carrier types of
samples were studied by Raman spectra analysis. After Er+ ion implantation into GaN samples,
new Raman peaks at wavenumber of 293, 362 (sic) 670 cm(-1) appeared, where 293 cm(-1) was
considered as disordered activation of Raman scattering (DARS), 362 and 670 cm(-1) may be
associated with GaN lattice defects formed after ion implantation. The E-2 (high) characteristic
peak moves to the high frequency before and after GaN Er samples annealing at 800 degrees C,
indicating that GaN lattice is under the compressive stress. The Lorenz fitting was used to
analysed the occurrences of A(1) (LO) peak in different samples which is composed of the
uncoupled mode LO and the plasmon coupling mode LPP+, qualitatively pointing out the carrier
concentration variation of a series of GaN : Er samples.
语种: Chinese
文献类型: Article
作者关键词: Gallium nitride; Ion implantation; Diluted magnetic semiconductors; Raman spectra
KeyWords Plus: SCATTERING; PHONONS
地址: [Tao Dong-yan; Liu Chao; Yin Chun-hai; Zeng Yi-ping] Chinese Acad Sci, Inst Semicond, Key
Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: Liu, C (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: dongyantao@semi.ac.cn; cliu@semi.ac.cn
ISSN: 1000-0593
-------------------------------------------------------------------------------第 98 条，共 234 条
标 题 : Multiwall Nanotubes, Multilayers, and Hybrid Nanostructures: New Frontiers for
Technology and Raman Spectroscopy
作者: Bonaccorso, F (Bonaccorso, Francesco); Tan, PH (Tan, Ping-Heng); Ferrari, AC (Ferrari,
Andrea C.)
来源出版物: ACS NANO 卷: 7 期: 3 页: 1838-1844 DOI: 10.1021/nn400758r 出版年:
MAR 2013
摘要: Technological progress is determined, to a great extent, by developments in material
science. Breakthroughs can happen when a new type of material or new combinations of known
materials with different dimensionality and functionality are created. Multi layered structures,
being planar or concentric, are now emerging as major players at the forefront of research.
Raman spectroscopy Is a well-established characterization technique for carbon nanomaterials
and is being developed for layered materials. In this Issue of ACS Nano, Hirschmann et al.
investigate triple-wall carbon nanotubes via resonant Raman spectroscopy, showing how a
wealth of Information can be derived about these complex structures. The next challenge Is to
tackle hybrid heterostructures, consisting of different planar or concentric materials, arranged
"on demand" to achieve targeted properties.
语种: English
文献类型: Editorial Material
KeyWords
Plus:
TRANSITION-METAL
DICHALCOGENIDES;
CARBON
NANOTUBES;
ELECTRONIC-STRUCTURE; TRILAYER GRAPHENE; ROOM-TEMPERATURE; POLYCRYSTALLINE;
GRAPHITE; SINGLE; MODE; MOS2
地址: [Bonaccorso, Francesco; Ferrari, Andrea C.] Univ Cambridge, Cambridge Graphene Ctr,
Cambridge CB3 0FA, England.
[Tan, Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,
Beijing 100083, Peoples R China.
通讯作者地址: Ferrari, AC (通讯作者),Univ Cambridge, Cambridge Graphene Ctr, 9 JJ Thomson
Ave, Cambridge CB3 0FA, England.
电子邮件地址: acf26@eng.cam.ac.uk
ISSN: 1936-0851
-------------------------------------------------------------------------------第 99 条，共 234 条
标题: Topology identification of uncertain nonlinearly coupled complex networks with delays
based on anticipatory synchronization
作者: Che, YQ (Che, Yanqiu); Li, RX (Li, Ruixue); Han, CX (Han, Chunxiao); Cui, SG (Cui, Shigang);
Wang, J (Wang, Jiang); Wei, XL (Wei, Xile); Deng, B (Deng, Bin)
来源出版物: CHAOS
MAR 2013
卷: 23
期: 1
文献号: 013127
DOI: 10.1063/1.4793541
出版年:
摘 要 : This paper presents an adaptive anticipatory synchronization based method for
simultaneous identification of topology and parameters of uncertain nonlinearly coupled complex
dynamical networks with time delays. An adaptive controller is proposed, based on Lyapunov
stability theorem and Barbalat's Lemma, to guarantee the stability of the anticipatory
synchronization manifold between drive and response networks. Meanwhile, not only the
identification criteria of network topology and system parameters are obtained but also the
anticipatory time is identified. Numerical simulation results illustrate the effectiveness of the
proposed method. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793541]
语种: English
文献类型: Article
KeyWords Plus: SMALL-WORLD NETWORKS; DYNAMICAL NETWORKS; SYSTEMS; LAG
地址: [Che, Yanqiu; Li, Ruixue; Han, Chunxiao; Cui, Shigang] Tianjin Univ Technol & Educ, Tianjin
Key Lab Informat Sensing & Intelligent Co, Tianjin 300222, Peoples R China.
[Che, Yanqiu] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Wang, Jiang; Wei, Xile; Deng, Bin] Tianjin Univ, Sch Elect Engn & Automat, Tianjin 300072,
Peoples R China.
通讯作者地址: Che, YQ (通讯作者),Tianjin Univ Technol & Educ, Tianjin Key Lab Informat
Sensing & Intelligent Co, Tianjin 300222, Peoples R China.
电子邮件地址: yqche@tju.edu.cn
ISSN: 1054-1500
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 50907044
60901035
61072012
61172009
61104032
Science and Technology Development Program of Tianjin Higher Education 20100819
20110834
Tianjin University of Technology and Education KYQD10009
KJ11-04
This work was supported by The National Natural Science Foundation of China (Grants Nos.
50907044, 60901035, 61072012, 61172009, and 61104032) and The Science and Technology
Development Program of Tianjin Higher Education (Grants Nos. 20100819 and 20110834). We
are grateful to the editor and reviewers for their valuable comments and suggestions. We would
also acknowledge the support of Tianjin University of Technology and Education (Grants Nos.
KYQD10009 and KJ11-04).
-------------------------------------------------------------------------------第 100 条，共 234 条
标 题 : High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for
Optical Interconnection
作者: Li, C (Li, Chong); Xue, CL (Xue, Chunlai); Liu, Z (Liu, Zhi); Cheng, BW (Cheng, Buwen); Li, CB
(Li, Chuanbo); Wang, QM (Wang, Qiming)
来源出版物: IEEE TRANSACTIONS ON ELECTRON DEVICES 卷: 60 期: 3 页: 1183-1187 DOI:
10.1109/TED.2013.2241066 出版年: MAR 2013
摘要: In this paper, we report efficient high-speed top-illuminated p-i-n photodiodes with high
responsivity fabricated from germanium (Ge) films grown directly on silicon-on-insulator
substrates. The devices were characterized with respect to their dark current, responsivity, and
3-dB bandwidth (BW) in the near infrared. For a 20-mu m-diameter device at room temperature,
the dark current densities were approximately 38.3 mA/cm(2) at -1 V. The responsivity (R) at 1.55
mu m was 0.30 A/W, corresponding to a quantum efficiency of 24%. The 3-dB BW of the detector
with 20-mu m diameter is as high as 23.3 GHz.
语种: English
文献类型: Article
作 者 关 键 词 : Germanium; integrated optoelectronics; optical communication; optical
interconnections; optoelectronic devices; photodetector
KeyWords Plus: GE-PHOTODETECTORS; SI
地址: [Li, Chong; Xue, Chunlai; Liu, Zhi; Cheng, Buwen; Li, Chuanbo; Wang, Qiming] Chinese Acad
Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Li, C (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : chli@semi.ac.cn; clxue@semi.ac.cn; zhiliu@semi.ac.cn; cbw@semi.ac.cn;
cbli@semi.ac.cn; qmwang@semi.ac.cn
ISSN: 0018-9383
基金资助致谢:
基金资助机构 授权号
Major State Basic Research Development Program of China 2013CB632103
2011CBA00608
National High-Technology Research and Development Program of China 2012AA012202
2011AA010302
National Natural Science Foundation of China 61177038
This work was supported in part by the Major State Basic Research Development Program of
China under Grants 2013CB632103 and 2011CBA00608, by the National High-Technology
Research and Development Program of China under Grants 2012AA012202 and 2011AA010302,
and by the National Natural Science Foundation of China under Grant 61177038. The review of
this paper was arranged by Editor J. Huang.
--------------------------------------------------------------------------------
第 101 条，共 234 条
标题: High Response in aTellurium-Supersaturated Silicon Photodiode
作者: Wang, XY (Wang Xi-Yuan); Huang, YG (Huang Yong-Guang); Liu, DW (Liu De-Wei); Zhu, XN
(Zhu Xiao-Ning); Zhu, HL (Zhu Hong-Liang)
来 源 出 版 物 : CHINESE PHYSICS LETTERS 卷 : 30 期 : 3 文 献 号 : 036101 DOI:
10.1088/0256-307X/30/3/036101 出版年: MAR 2013
摘要: Single crystalline silicon supersaturated with tellurium are formed by ion implantation
followed by excimer nanosecond pulsed laser melting (PLM). The lattice damaged by ion
implantation is restored during the PLM process, and dopants are effectively activated. The
hyperdoped layer exhibits high and broad optical absorption from 400 to 2500 nm. The n(+)p
photodiodes fabricated from these materials show high response (6.9A/W at 1000 nm) with
reverse bias 12V at room temperature. The corresponding cut-off wavelength is 1258 nm. The
amount of gain and extended cut-off wavelength both increase with increasing reverse bias
voltage; above 100% external quantum efficiency is observed even at a reverse bias of 1 V. The
cut-off wavelength with 0V bias is shorter than the commercial silicon detector. This implies that
the Burstein-Moss shift is due to hyperdoping. The amount of the extended cut-off wavelength
increases with increasing reverse bias voltage, suggesting existence of the Franz-Keldysh effect.
语种: English
文献类型: Article
KeyWords Plus: INFRARED-ABSORPTION; LASER
地址: [Wang Xi-Yuan; Huang Yong-Guang; Liu De-Wei; Zhu Xiao-Ning; Zhu Hong-Liang] Chinese
Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
[Liu De-Wei] Zhengzhou Univ Light Ind, Dept Technol & Phys, Zhengzhou 450002, Peoples R
China.
通讯作者地址: Huang, YG (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat
Sci, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: yghuang@red.semi.ac.cn
ISSN: 0256-307X
基金资助致谢:
基金资助机构 授权号
Beijing Natural Science Foundation 4122080
National Basic Research Program of China 2012CB934202
Chinese Academy of Sciences Y072051002
Supported by the Beijing Natural Science Foundation under Grant No 4122080, the National Basic
Research Program of China under Grant No 2012CB934202, and the Chinese Academy of Sciences
(No Y072051002).
-------------------------------------------------------------------------------第 102 条，共 234 条
标题: The Generation of a Compact Azimuthally Polarized Vertical-Cavity Surface Emitting Laser
Beam with Radial Slits
作者: Xu, BZ (Xu Bin-Zong); Liu, JT (Liu Jie-Tao); Cai, LK (Cai Li-Kang); Hu, HF (Hu Hai-Feng); Wang,
Q (Wang Qing); Wei, X (Wei Xin); Song, GF (Song Guo-Feng)
来 源 出 版 物 : CHINESE PHYSICS LETTERS 卷 : 30 期 : 3 文 献 号 : 034206 DOI:
10.1088/0256-307X/30/3/034206 出版年: MAR 2013
摘要: We propose the simple and efficient generation of a compact azimuthally polarized laser
beam. Radial slits with annular distribution are patterned onto the output facet of a standard
vertical-cavity surface emitting laser. Due to the polarization modulation of the surface plasmon
polariton mode excited by the radial slits, a compact azimuthally polarized laser beam at 850 nm
is experimentally demonstrated. The finite-difference time-domain method is introduced to
analyze the polarization characteristics of the transmitted light through the radial slit, which
agrees well with our experimental results.
语种: English
文献类型: Article
KeyWords Plus: CYLINDRICAL VECTOR BEAMS; PARTICLES; FILMS
地址: [Xu Bin-Zong; Liu Jie-Tao; Cai Li-Kang; Hu Hai-Feng; Wang Qing; Wei Xin; Song Guo-Feng]
Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Song, GF (通讯作者),Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R
China.
电子邮件地址: sgf@red.semi.ac.cn
ISSN: 0256-307X
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CBA00608
2012CB619203
National Natural Science Foundation of China 61036010
60906027
60906028
61177070
External Cooperation Program of the Chinese Academy of Sciences GJHZ200804
Supported by the National Basic Research Program of China under Grant Nos 2011CBA00608 and
2012CB619203, the National Natural Science Foundation of China under Grant Nos 61036010,
60906027, 60906028 and 61177070, and the External Cooperation Program of the Chinese
Academy of Sciences under Grant No GJHZ200804.
-------------------------------------------------------------------------------第 103 条，共 234 条
标题: Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface
Orientations With Sub-400 degrees C Si2H6 Passivation
作者: Gong, X (Gong, Xiao); Han, GQ (Han, Genquan); Bai, F (Bai, Fan); Su, SJ (Su, Shaojian); Guo,
PF (Guo, Pengfei); Yang, Y (Yang, Yue); Cheng, R (Cheng, Ran); Zhang, DL (Zhang, Dongliang);
Zhang, GZ (Zhang, Guangze); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Pan, JS (Pan,
Jisheng); Zhang, Z (Zhang, Zheng); Tok, ES (Tok, Eng Soon); Antoniadis, D (Antoniadis, Dimitri); Yeo,
YC (Yeo, Yee-Chia)
来 源 出 版 物 : IEEE ELECTRON DEVICE LETTERS 卷 : 34 期 : 3 页 : 339-341 DOI:
10.1109/LED.2012.2236880 出版年: MAR 2013
摘要: In this letter, we report the first study of the dependence of carrier mobility anddrive
current I-Dsat of Ge0.958Sn0.042 p-channel metal-oxide-semiconductor field-effect transistors
(pMOSFETs) on surface orientations. Compressively strained Ge0.958Sn0.042 channels were
grown on (100) and (111) Ge substrates. Sub-400 degrees C Si2H6 treatment was introduced for
the passivation of the GeSn surface prior to gate stack formation. Source/drain series resistance
and subthreshold swing S were found to be independent of surface orientation. The smallest
reported S of 130 mV/decade for GeSn pMOSFETs is achieved. The (111)oriented device
demonstrates 13% higher IDsat over the (100)oriented one at a V-GS-V-TH of -0.6 V and V-DS of
-0.9 V. We also found that GeSn pMOSFETs with (111) surface orientation show 18% higher hole
mobility than GeSn pMOSFETs with (100) orientation.
语种: English
文献类型: Article
作者关键词: GeSn p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs);
Si2H6 passivation; (100) and (111) surface orientations
KeyWords Plus: MOBILITY; GATE; CMOS; TEMPERATURE; SUBSTRATE
地址: [Gong, Xiao; Han, Genquan; Bai, Fan; Guo, Pengfei; Yang, Yue; Cheng, Ran; Yeo, Yee-Chia]
Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.
[Su, Shaojian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China.
[Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen] Chinese Acad Sci, Inst
Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
[Pan, Jisheng] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore.
[Pan, Jisheng; Tok, Eng Soon] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore.
[Zhang, Zheng] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore.
[Antoniadis, Dimitri] MIT, Microsyst Technol Lab, Cambridge, MA 02139 USA.
通讯作者地址: Gong, X (通讯作者),Natl Univ Singapore, Dept Elect & Comp Engn, Singapore
117576, Singapore.
电子邮件地址: hangenquan@ieee.org; yeo@ieee.org
ISSN: 0741-3106
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61177038
61176013
National Research Foundation NRF-RF2008-09
Manuscript received November 24, 2012; revised December 13, 2012; accepted December 23,
2012. Date of publication January 21, 2013; date of current version February 20, 2013. The work
of C. Xue was supported by the National Natural Science Foundation of China under Grant
61177038. The work of B. Cheng was supported by the National Natural Science Foundation of
China under Grant 61176013. The work of Y.-C. Yeo was supported by the National Research
Foundation under Grant NRF-RF2008-09. The review of this letter was arranged by Editor J. Cai.
-------------------------------------------------------------------------------第 104 条，共 234 条
标题: Ultraviolet Detector Based on SrZr0.1Ti0.9O3 Film
作者: Zhang, M (Zhang, Min); Chen, Y (Chen, Yu); Zhang, HF (Zhang, Haifeng); Chen, WY (Chen,
Weiyou); Lv, KB (Lv, Kaibo); Ruan, SP (Ruan, Shengping)
来 源 出 版 物 : IEEE ELECTRON DEVICE LETTERS 卷 : 34 期 : 3 页 : 420-422 DOI:
10.1109/LED.2012.2236072 出版年: MAR 2013
摘要: In this letter, a nanocrystalline SrZr0.1Ti0.9O3 thin film was synthesized by sol-gel method
and characterized by means of X-ray diffraction, X-ray photoelectron spectroscopy, atomic force
microscopy, and UV-visible absorption spectra. Interdigitated Au electrodes were deposited on
the film to fabricate metal-semiconductor-metal ultraviolet photodetector. At 5-V bias, the dark
current of the device was 41 pA. Under the irradiation of 260-nm UV light, peak responsivity of 94
mA/W was achieved, which was higher than that of pure SrTiO3-based photodetectors. The
higher responsivity of the SrZr0.1Ti0.9O3 device may be due to the introduction of zirconia,
which would induce more oxygen vacancies. The UV/visible rejection ratio R-260 nm/R-380 nm
was more than three orders of magnitude, indicating excellent sensitivity. The rise time and fall
time of the device were 3.8 and 565 ms, respectively.
语种: English
文献类型: Article
作者关键词: Metal-semiconductor-metal (MSM) structure; SrZr0.1Ti0.9O3; ultraviolet (UV)
detector
KeyWords Plus: SRTIO3
地址: [Zhang, Min; Chen, Yu; Zhang, Haifeng; Chen, Weiyou; Lv, Kaibo; Ruan, Shengping] Jilin Univ,
State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.
[Zhang, Min; Chen, Yu; Zhang, Haifeng; Chen, Weiyou; Lv, Kaibo; Ruan, Shengping] Chinese Acad
Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Zhang, M (通讯作者),Jilin Univ, State Key Lab Integrated Optoelect, Changchun
130012, Peoples R China.
电子邮件地址: chenyu@semi.ac.cn; rsp1226@gmail.com
ISSN: 0741-3106
基金资助致谢:
基金资助机构 授权号
Natural Science Foundation of China 61274068
61275035
Doctoral Fund of the Ministry of Education of China 20110061130004
20090061110040
Project of Science and Technology Development Plan of Jilin Province 20120324
Opened Fund of the State Key Laboratory on Integrated Optoelectronics
This work was supported by the Natural Science Foundation of China under Grant 61274068 and
Grant 61275035, by the Doctoral Fund of the Ministry of Education of China under Grant
20110061130004 and Grant 20090061110040, by the Project of Science and Technology
Development Plan of Jilin Province under Grant 20120324, and by the Opened Fund of the State
Key Laboratory on Integrated Optoelectronics. The review of this letter was arranged by Editor
J.-M. Liu.
-------------------------------------------------------------------------------第 105 条，共 234 条
标题: High response solar-blind ultraviolet photodetector based on Zr0.5Ti0.5O2 film
作者: Zhang, M (Zhang, Min); Gu, XH (Gu, Xuehui); Lv, KB (Lv, Kaibo); Dong, W (Dong, Wei); Ruan,
SP (Ruan, Shengping); Chen, Y (Chen, Yu); Zhang, HF (Zhang, Haifeng)
来 源 出 版 物 : APPLIED SURFACE SCIENCE
卷 : 268
页 : 312-316
DOI:
10.1016/j.apsusc.2012.12.084 出版年: MAR 1 2013
摘要: In this letter, high response solar-blind Zr0.5Ti0.5O2 ultraviolet detectors with Au and Pt
electrodes were fabricated. The stability and photoelectric characteristics of the devices at
different temperature and relative humidity were studied. The detectors covered the whole
solar-blind spectrum range and responded mainly in 200-290 nm. At 5 V bias, 25 degrees C and
33% RH, the dark current of the detector with Pt electrodes was only 17 pA. Under the radiation
of 250 nm UV light, a high responsivity of 620 mA/W was obtained for Pt electrodes device.
Moreover, the detector also exhibited a fast response time: the rise and fall time were 424.1 and
154 ms, respectively. (C) 2012 Elsevier B.V. All rights reserved.
语种: English
文献类型: Article
作者关键词: Solar-blind; Photodetector; Zr0.5Ti0.5O2
KeyWords Plus: GEL METHOD; DETECTOR
地址: [Zhang, Min; Gu, Xuehui; Lv, Kaibo; Dong, Wei; Ruan, Shengping] Jilin Univ, State Key Lab
Integrated Optoelect, Changchun 130012, Peoples R China.
[Chen, Yu] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Zhang, Haifeng] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA.
通讯作者地址: Ruan, SP (通讯作者),Jilin Univ, State Key Lab Integrated Optoelect, 2699 Qianjin
St, Changchun 130012, Peoples R China.
电子邮件地址: rsp1226@gmail.com; chenyu@semi.ac.cn
ISSN: 0169-4332
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61274068
61275035
50977038
Major Project of Science and Technology Development Plan of Jilin Province 20120324
Ministry of Education of China 20110061130004
This work was supported by the National Natural Science Foundation of China (Grant Nos.
61274068, 61275035, 50977038); Major Project of Science and Technology Development Plan of
Jilin Province (Grant No. 20120324); and Doctoral Found of Ministry of Education of China (Grant
No. 20110061130004).
-------------------------------------------------------------------------------第 106 条，共 234 条
标题: 2013 3rd issue of SCIENCE CHINA Technological Sciences 11431 (Special Topic on
Optoelectronic Technology and Its Applications(537-628)
作者: Zhu, NH (Zhu NingHua); Su, YK (Su YiKai); Liu, JG (Liu JianGuo)
来源出版物: SCIENCE CHINA-TECHNOLOGICAL SCIENCES 卷: 56 期: 3 页: 537-537 DOI:
10.1007/s11431-012-5111-3 出版年: MAR 2013
语种: English
文献类型: Editorial Material
地址: [Zhu NingHua; Liu JianGuo] Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R
China.
[Su YiKai] Shanghai Jiao Tong Univ, Ctr Optoelect Mat & Devices, Shanghai, Peoples R China.
通讯作者地址: Zhu, NH (通讯作者),Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R
China.
ISSN: 1674-7321
-------------------------------------------------------------------------------第 107 条，共 234 条
标题: Output characteristics of square and circular resonator microlasers connected with two
output waveguides
作者: Huang, YZ (Huang YongZhen); Lu, XM (Lu XiaoMeng); Lin, JD (Lin JianDong); Du, Y (Du Yun)
来源出版物: SCIENCE CHINA-TECHNOLOGICAL SCIENCES 卷: 56 期: 3 页: 538-542 DOI:
10.1007/s11431-013-5130-8 出版年: MAR 2013
摘要: Square and circular resonator microlasers connected with two output waveguides are
investigated for correlation of output powers from the two output ports. The square resonator
microlasers with two output waveguides connected at the midpoint of one side and one vertex
are fabricated and tested by measuring the output power versus injection current and the laser
spectra of the two ports. The laser spectra indicated that the output power correlation between
the two output ports is very weak because of different lasing modes in different ports of the
square microlaser. Circular resonator microlaser with two output waveguides can realize single
mode operation and has good output correlation from the two ports. So the output power from
one port of the circular microlasers can be monitored by that of another port.
语种: English
文献类型: Article
作者关键词: AlGaInAs/InP; semiconductor microlasers; square resonator microlasers; circular
resonator microlasers
地址: [Huang YongZhen; Lu XiaoMeng; Lin JianDong; Du Yun] Chinese Acad Sci, Inst Semicond,
State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Huang, YZ (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: yzhuang@semi.ac.cn
ISSN: 1674-7321
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61061160502
61235004
National Hi-Tech Research and Development Program of China ("863" Project) 2012AA012202
This work was supported by the National Natural Science Foundation of China (Grant Nos.
61061160502 and 61235004) and the National Hi-Tech Research and Development Program of
China ("863" Project) (Grant No. 2012AA012202).
-------------------------------------------------------------------------------第 108 条，共 234 条
标题: InP based DFB laser array integrated with MMI coupler
作者: Zhu, HL (Zhu HongLiang); Ma, L (Ma Li); Liang, S (Liang Song); Zhang, C (Zhang Can); Wang,
BJ (Wang BaoJun); Zhao, LJ (Zhao LingJuan); Wang, W (Wang Wei)
来源出版物: SCIENCE CHINA-TECHNOLOGICAL SCIENCES 卷: 56 期: 3 页: 573-578 DOI:
10.1007/s11431-012-5118-9 出版年: MAR 2013
摘要: The techniques used for the fabrication of photonic integrated circuit (PIC) chip are
introduced briefly. Then a four channel DFB laser array integrated with MMI coupler and
semiconductor optical amplifier (SOA) fabricated with butt-joint technique, varied ridge width
and holographic exposure techniques is reported.
语种: English
文献类型: Article
作者关键词: PIC; DFB laser array; MMI; monolithic integration
KeyWords Plus: SELECTIVE-AREA GROWTH; QUANTUM-WELL; TRANSMITTER; CHIP
地址: [Zhu HongLiang; Ma Li; Liang Song; Zhang Can; Wang BaoJun; Zhao LingJuan; Wang Wei]
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
[Ma Li] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China.
通讯作者地址: Zhu, HL (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: zhuhl@red.semi.ac.cn
ISSN: 1674-7321
基金资助致谢:
基金资助机构 授权号
National Hi-Tech Research and Development Program of China ("863" Project) 2011AA010303
2012AA012203
National Basic Research Program of China ("973" Project) 2011CB301702
National Natural Science Foundation of China 61021003
61090392
The work was supported by the National Hi-Tech Research and Development Program of China
("863" Project)(Grant Nos. 2011AA010303, 2012AA012203), the National Basic Research Program
of China ("973" Project)(Grant No. 2011CB301702) and the National Natural Science Foundation
of China (Grant Nos. 61021003, 61090392).
-------------------------------------------------------------------------------第 109 条，共 234 条
标题: Development of silicon photonic devices for optical interconnects
作者: Xiao, X (Xiao Xi); Li, ZY (Li ZhiYong); Chu, T (Chu Tao); Xu, H (Xu Hao); Li, XY (Li XianYao);
Nemkova, A (Nemkova, Anastasia); Kang, X (Kang Xiong); Yu, YD (Yu YuDe); Yu, JZ (Yu JinZhong)
来源出版物: SCIENCE CHINA-TECHNOLOGICAL SCIENCES 卷: 56 期: 3 页: 586-593 DOI:
10.1007/s11431-012-5120-2 出版年: MAR 2013
摘要: Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS)
compatible technologies have shown attractive performances on very-large-scale monolithic
optoelectronic integration, high speed modulation and switching, and efficient off-chip optical
coupling. This paper presents the recent progress on fast silicon optical modulation,
wavelength-insensitive optical switching and efficient optical coupling techniques in our group.
Several CMOS-compatible silicon optical couplers with different structures have been developed,
showing the highest coupling efficiency of 65%. Broadband silicon-based optical switches with
sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel
PN junctions are demonstrated with the speed up to 50 Gb s(-1).
语种: English
文献类型: Article
作者关键词: silicon photonics; microresonator; optical modulator; optical switch
KeyWords Plus: INTERLEAVED PN JUNCTIONS; ON-INSULATOR; MODULATOR; DEPLETION;
SWITCH
地址: [Xiao Xi; Li ZhiYong; Chu Tao; Xu Hao; Li XianYao; Nemkova, Anastasia; Kang Xiong; Yu YuDe;
Yu JinZhong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,
Peoples R China.
通讯作者地址: Yu, JZ (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: jzyu@semi.ac.cn
ISSN: 1674-7321
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CB301701
2012CB933502
2012CB933504
National Natural Science Foundation of China 60877036
61107048
Chinese Academy of Sciences 2011Y1GB07
China Postdoctoral Science Foundation 2011M500372
This work was supported by the National Basic Research Program of China (Grant Nos.
2011CB301701, 2012CB933502 and 2012CB933504), the National Natural Science Foundation of
China (Grant Nos. 60877036 and 61107048), the Chinese Academy of Sciences for a fellowship for
young international scientists (Grant No. 2011Y1GB07) and the China Postdoctoral Science
Foundation (Grant No. 2011M500372).
-------------------------------------------------------------------------------第 110 条，共 234 条
标题: Fast tunable and broadband microwave sweep-frequency source based on photonic
technology
作者: Zhu, NH (Zhu NingHua); Du, YX (Du YuanXin); Wu, XM (Wu XuMing); Zheng, JY (Zheng
JianYu); Wang, H (Wang Hui); Liu, JG (Liu JianGuo)
来源出版物: SCIENCE CHINA-TECHNOLOGICAL SCIENCES 卷: 56 期: 3 页: 612-616 DOI:
10.1007/s11431-012-5117-x 出版年: MAR 2013
摘要: A high-speed broadband tunable microwave source utilizing the wavelength tunable
characteristics of distributed Bragg reflector (DBR) laser is proposed and demonstrated. The
wavelength tuning of the laser is achieved instantaneously by controlling the voltage of the phase
section of the DBR laser. By means of optical delay self-heterodyne technology, the microwave
signal with the property of frequency broadband tuning is generated. Sweep speeds of 5 and 40
mu s of the sweep-frequency source prototype were achieved and the maximum tuning range
was up to 38.45 GHz.
语种: English
文献类型: Article
作者关键词: microwave source; frequency sweep; broadband; high speed
KeyWords Plus: LASERS
地址: [Zhu NingHua; Du YuanXin; Wu XuMing; Zheng JianYu; Wang Hui; Liu JianGuo] Chinese
Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Liu, JG (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: jgliu@semi.ac.cn
ISSN: 1674-7321
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China ("973" Project) 2012CB315702
2012CB315703
National Natural Science Foundation of China 61090390
61275078
Foundation for Innovative Research Groups of the National Natural Science Foundation of China
61021003
This work was supported by the National Basic Research Program of China ("973" Project) (Grant
Nos. 2012CB315702, 2012CB315703), the National Natural Science Foundation of China (Grant
Nos. 61090390, 61275078), the Foundation for Innovative Research Groups of the National
Natural Science Foundation of China (Grant No. 61021003).
-------------------------------------------------------------------------------第 111 条，共 234 条
标题: Dual current injection tunable SBG semiconductor laser with asymmetric p equivalent
phase shift
作者: Zhou, YT (Zhou, Yating); Hou, J (Hou, Jie); Chen, XF (Chen, Xiangfei)
来源出版物: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 卷: 55 期: 3 页: 692-696
DOI: 10.1002/mop.27357 出版年: MAR 2013
摘要: An asymmetric p equivalent phase shift sampled Bragg grating (SBG) semiconductor, which
is consisted of two section with the same length but different sampling duty cycle 0.4 and 0.6, is
investigated experimentally. By increasing the two injected currents of the studied laser from 15
mA to 120 mA, the lasing wavelength can be tuned by 2.1 nm. Combining selecting appropriate
sampling period, the lasing wavelength of the laser can be tuned to meet the ITU-T standard.
Because of high yield and low cost, this type of SBG laser is very beneficial for designing and
fabricating monolithically integrated wideband multiwavelength laser array for photonic
integrated circuits in next generation fiber-optic system. (C) 2012 Wiley Periodicals, Inc.
Microwave Opt Technol Lett 55:692696, 2013; View this article online at wileyonlinelibrary.com.
DOI 10.1002/mop.27357
语种: English
文献类型: Article
作者关键词: tunable SBG semiconductor laser; p equivalent phase shift (EPS); dual current
injection; ITU-T standard
KeyWords Plus: DISTRIBUTED FEEDBACK LASERS; DFB LASER; CHIRP TECHNOLOGY; MODE
地址: [Zhou, Yating] Changzhou Inst Technol, Sch Sci, Changzhou 213002, Peoples R China.
[Zhou, Yating; Chen, Xiangfei] Nanjing Univ, Coll Engn & Appl Sci, Nanjing, Jiangsu, Peoples R
China.
[Hou, Jie] Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
通讯作者地址: Zhou, YT (通讯作者),Changzhou Inst Technol, Sch Sci, Changzhou 213002,
Peoples R China.
电子邮件地址: zhou-yating@163.com
ISSN: 0895-2477
基金资助致谢:
基金资助机构 授权号
Natural Science Foundation of Changzhou Institute of Technology YN1008
National Natural Science Foundation of china 61090392
National High-Tech Research & Development Program of China 2011AA0103
This work was supported by the Natural Science Foundation of Changzhou Institute of Technology
under grant YN1008, in part by the National Natural Science Foundation of china under grant
61090392, as well as by the National High-Tech Research & Development Program of China
(2011AA0103).
-------------------------------------------------------------------------------第 112 条，共 234 条
标题: Analysis of Mode Coupling and Threshold Gain Control for Nanocircular Resonators
Confined by Isolation and Metallic Layers
作者: Yao, QF (Yao, Qi-Feng); Huang, YZ (Huang, Yong-Zhen); Zou, LX (Zou, Ling-Xiu); Lv, XM (Lv,
Xiao-Meng); Lin, JD (Lin, Jian-Dong); Yang, YD (Yang, Yue-De)
来源出版物: JOURNAL OF LIGHTWAVE TECHNOLOGY 卷: 31 期: 5 页: 786-792 DOI:
10.1109/JLT.2012.2234437 出版年: MAR 1 2013
摘要: Mode coupling and the control of mode Q factor and threshold gain are analyzed for
nanocircular resonators confined by isolation and metallic layers based on solving eigenvalue
equation for multiple-layer structure circular resonators. For nanocircular resonators only
confined by a metallic layer, the metallic layer can enhance the mode confinement for transverse
magnetic (TM) whispering-gallery modes (WGMs) and result in high Q TM WGMs. But transverse
electric (TE) WGMs can form hybrid modes of surface plasmon polaritons and dielectric modes,
with the mode Q factors limited by the metallic layer absorption. By introducing a low index
isolation layer between the resonator and the metallic layer, we can greatly enhance the mode Q
factors for TE WGMs. However, the mode coupling between different radial modes and the
variation of the optical confinement factor in the active layer can result in the oscillation of the
mode Q factor and threshold gain versus the isolation layer thickness. The optimization of the
isolation layer thickness is important to enhance the mode Q factor and the optical confinement
factor for realizing low threshold gain.
语种: English
文献类型: Article
作者关键词: Mode Q factor; nanocavity lasers; threshold gain; TE and TM modes
KeyWords Plus: NANOLASERS
地址: [Yao, Qi-Feng; Huang, Yong-Zhen; Zou, Ling-Xiu; Lv, Xiao-Meng; Lin, Jian-Dong; Yang, Yue-De]
Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R
China.
通讯作者地址: Yao, QF (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : qifengyao@semi.ac.cn; yzhuang@semi.ac.cn; zoulingxiu@semi.ac.cn;
lvxiaomeng@semi.ac.cn; linjiandong@semi.ac.cn; yyd@semi.ac.cn
ISSN: 0733-8724
基金资助致谢:
基金资助机构 授权号
National Nature Science Foundation of China 60838003
61021003
61106048
61061160502
61006042
High Technology Project of China 2012AA012202
Manuscript received July 09, 2012; revised October 07, 2012, December 04, 2012; accepted
December 10, 2012. Date of publication December 20, 2012; date of current version January 23,
2013. This work was supported in part by the National Nature Science Foundation of China under
Grant 60838003, Grant 61021003, Grant 61106048, Grant 61061160502, and Grant 61006042
and the High Technology Project of China under Grant 2012AA012202.
-------------------------------------------------------------------------------第 113 条，共 234 条
标题: P-type reduced graphene oxide membranes induced by iodine doping
作者: Wang, Z (Wang, Zhi); Wang, WZ (Wang, Wenzhong); Wang, ML (Wang, Meili); Meng, XQ
(Meng, Xiuqing); Li, JB (Li, Jingbo)
来 源 出版 物: JOURNAL OF MATERIALS SCIENCE 卷 : 48 期: 5 页: 2284-2289 DOI:
10.1007/s10853-012-7006-x 出版年: MAR 2013
摘要: Reduced graphene oxide membranes with electrical conductivity of 201 S/cm were
successfully fabricated by a simple hydriodic acid reducing method. It has been shown that the
obtained graphene oxide membranes exhibit a p-type conductive property with a hole carrier
concentration of 3.66 x 10(17) cm(-2) and a mobility of 13.7 cm(2)/Vs. The p-type conductive
property was mainly attributed to iodine atom adsorption on C atom layer, supported by the
energy dispersive X-ray spectrometry and the first-principles calculations based on the density
functional theory. The Bader method was used to analyze charge density of each atom. It has
been shown that 0.38 electrons per unit cell are transferred to I atom from the C atom layer
which leaves a lot of holes.
语种: English
文献类型: Article
KeyWords Plus: GRAPHITE OXIDE; SHEETS; FILMS; NANOCOMPOSITES; TRANSPARENT;
REDUCTION; PAPER
地址: [Wang, Zhi; Wang, Meili; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab
Superlattices & Microstruct, Beijing 100083, Peoples R China.
[Wang, Wenzhong] Minzu Univ China, Sch Sci, Beijing 100081, Peoples R China.
[Meng, Xiuqing] Zhejiang Normal Univ, Jinhua 321004, Zhejiang, Peoples R China.
通讯作者地址: Wang, Z (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, Beijing 100083, Peoples R China.
电子邮件地址: zhiwang@semi.ac.cn; jbli@semi.ac.cn
ISSN: 0022-2461
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholars 60925016
National Basic Research Program of China 2011CB921901
J. Li gratefully acknowledges financial support from the National Science Fund for Distinguished
Young Scholars (grant no. 60925016). This work is supported by the National Basic Research
Program of China (grant no. 2011CB921901).
-------------------------------------------------------------------------------第 114 条，共 234 条
标题: In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs
quantum wells studied by reflectance difference spectroscopy
作者: Yu, JL (Yu, J. L.); Chen, YH (Chen, Y. H.); Bo, X (Bo, X.); Jiang, CY (Jiang, C. Y.); Ye, XL (Ye, X. L.);
Wu, SJ (Wu, S. J.); Gao, HS (Gao, H. S.)
来源 出版物: JOURNAL OF APPLIED PHYSICS 卷 : 113 期: 8 文献 号: 083504 DOI:
10.1063/1.4790577 出版年: FEB 28 2013
摘要: In-plane optical anisotropy (IPOA) in modulation-doped (001) GaAs/AlGaAs quantum wells
(QWs) has been studied by reflectance difference spectroscopy (RDS). By changing the position of
the delta-doping layer, we introduce an asymmetric potential into the quantum well system,
which results in an additional IPOA. Compared to symmetrically doped and undoped structure,
the asymmetrically doped QWs exhibit larger IPOA, which is clearly demonstrated both by the
RDS results measured at 80 K and the linear extrapolation of the RDS signal under uniaxial strain
measured at room temperature. Numerical calculations within the envelope function framework
show that the asymmetric potential induced by asymmetrically doping will introduce additional
hole-mixing coefficients. This work demonstrates that the IPOA of QWs can be tailored by
changing the delta-doping position. (C) 2013 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4790577]
语种: English
文献类型: Article
KeyWords Plus: INVERSION ASYMMETRY; UNIAXIAL STRAIN; HETEROSTRUCTURES
地址: [Yu, J. L.; Chen, Y. H.; Bo, X.; Jiang, C. Y.; Ye, X. L.; Wu, S. J.; Gao, H. S.] Chinese Acad Sci, Inst
Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
[Yu, J. L.] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian Province, Peoples R
China.
[Yu, J. L.] Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Fuzhou 350108, Fujian Province,
Peoples R China.
通讯作者地址: Yu, JL (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
POB 912, Beijing 100083, Peoples R China.
电子邮件地址: yhchen@semi.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
973 program 2012CB921304
2013CB632805
National Natural Science Foundation of China 60990313
Foundation of Fuzhou University 022498
We thank Dr. Yafeng Song for helpful discussions. The work was supported by the 973 program
(2012CB921304 and 2013CB632805), the National Natural Science Foundation of China (No.
60990313) and the Foundation of Fuzhou University (No. 022498).
-------------------------------------------------------------------------------第 115 条，共 234 条
标题: High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization
作者: Xiao, X (Xiao, Xi); Xu, H (Xu, Hao); Li, XY (Li, Xianyao); Li, ZY (Li, Zhiyong); Chu, T (Chu, Tao);
Yu, YD (Yu, Yude); Yu, JZ (Yu, Jinzhong)
来源出版物: OPTICS EXPRESS 卷: 21 期: 4 页: 4116-4125 出版年: FEB 25 2013
摘要: We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion
loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss
and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly
choosing the doping concentration and precisely locating the junction. High-speed modulations
up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a
total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of
50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America
语种: English
文献类型: Article
KeyWords Plus: INTERLEAVED PN JUNCTIONS; OPTICAL MODULATOR; WAVE MODULATOR;
GUIDES
地址: [Xiao, Xi; Xu, Hao; Li, Xianyao; Li, Zhiyong; Chu, Tao; Yu, Yude; Yu, Jinzhong] Chinese Acad
Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Xiao, X (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: yudeyu@semi.ac.cn
ISSN: 1094-4087
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CB301701
2012CB933502
2012CB933504
Knowledge Innovation Program of the Chinese Academy of Sciences KGCX2-EW-102
National Natural Science Foundation of China 61107048
61275065
The authors thank Semiconductor Manufacturing International Corporation for the fabrication
support and process optimization of the current silicon photonics research. The present work was
supported by the National Basic Research Program of China (Grant No. 2011CB301701, No.
2012CB933502, and No. 2012CB933504), the Knowledge Innovation Program of the Chinese
Academy of Sciences (Grant No. KGCX2-EW-102), and the National Natural Science Foundation of
China (Grant No. 61107048 and No. 61275065).
-------------------------------------------------------------------------------第 116 条，共 234 条
标题: Anomalous electron collimation in HgTe quantum wells with inverted band structure
作者: Zou, YL (Zou, Y. L.); Zhang, LB (Zhang, L. B.); Song, JT (Song, J. T.)
来源出版物: JOURNAL OF PHYSICS-CONDENSED MATTER 卷: 25 期: 7 文献号: 075801
DOI: 10.1088/0953-8984/25/7/075801 出版年: FEB 20 2013
摘要: We investigate the electron collimation behavior in HgTe quantum wells (QWs) with a
magnetic-electric barrier induced by a ferromagnetic metal stripe. We find that electrons can
transmit perfectly through the magnetic-electric barrier at some specific incidence angles. These
angles can be controlled by the tuning gate voltage, local magnetic field and Fermi energy of
incident electrons in QWs with appropriate barrier length. This collimation feature can be used to
construct momentum filters in HgTe QWs and has potential application in nanodevices.
语种: English
文献类型: Article
KeyWords Plus: TOPOLOGICAL INSULATORS; TRANSPORT; SURFACE; STATE
地址: [Zou, Y. L.] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.
[Zhang, L. B.] Chinese Acad Sci, SKLSM, Inst Semicond, Beijing 100083, Peoples R China.
[Song, J. T.] Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Hebei, Peoples R China.
[Song, J. T.] Hebei Normal Univ, Hebei Adv Thin Film Lab, Shijiazhuang 050024, Hebei, Peoples R
China.
通讯作者地址: Zou, YL (通讯作者),Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.
电子邮件地址: lbzhang@semi.ac.cn
ISSN: 0953-8984
基金资助致谢:
基金资助机构 授权号
NSF China 10821403
China-973 program 2009CB929100
NSFC 11047131
RFDPHE-China 20101303120005
This work is financially supported by NSF China under Grants No. 10821403, China-973 program
Project No. 2009CB929100, NSFC under Grant No. 11047131, and RFDPHE-China under Grant No.
20101303120005.
-------------------------------------------------------------------------------第 117 条，共 234 条
标题: Improving the optical absorption of BiFeO3 for photovoltaic applications via uniaxial
compression or biaxial tension
作者: Dong, HF (Dong, Huafeng); Wu, ZG (Wu, Zhigang); Wang, SY (Wang, Shanying); Duan, WH
(Duan, Wenhui); Li, JB (Li, Jingbo)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 7 文 献 号 : 072905 DOI:
10.1063/1.4793397 出版年: FEB 18 2013
摘要: First-principles computations are employed to investigate the electronic structures and
optical absorption of rhombohedral BiFeO3 under uniaxial compression and biaxial tension. We
find that the bandgap of BiFeO3 is reduced under uniaxial compression, and it can be tuned to
the ideal value for photovoltaic applications; furthermore, the indirect-to-direct bandgap
transition occurs, which would lead to much enhanced optical absorption near the band edge.
Similar results are found for biaxial tensile strain. Strong optical absorption is critical to build
efficient solar cells based on ferroelectric thin films; strain engineering is thus a practical route
towards realizing this scheme, in which no junction is needed to separate charge carriers. (C)
2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793397]
语种: English
文献类型: Article
KeyWords Plus: SOLAR-CELLS; FILMS
地址: [Dong, Huafeng; Wang, Shanying; Duan, Wenhui] Tsinghua Univ, Dept Phys, Beijing 100084,
Peoples R China.
[Dong, Huafeng; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, Beijing 100083, Peoples R China.
[Wu, Zhigang] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA.
通讯作者地址: Dong, HF (通讯作者),Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.
电子邮件地址: zhiwu@mines.edu; jbli@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholar 60925016
U.S. DOE DE-SC0006433
National Basic Research Program of China 2011CB921901
National Natural Science Foundation of China 11174173
External Cooperation Program of Chinese Academy of Sciences
J. Li acknowledges financial support from the National Science Fund for Distinguished Young
Scholar (Grant No. 60925016). The work at Colorado School of Mines was supported by U.S. DOE
Early Career Award (Grant No. DE-SC0006433). This work was also supported by the National
Basic Research Program of China (Grant No. 2011CB921901), the National Natural Science
Foundation of China (Grant No. 11174173), and the External Cooperation Program of Chinese
Academy of Sciences.
-------------------------------------------------------------------------------第 118 条，共 234 条
标题: Observation of circular dichroism in (001)-oriented P-I-N InGaAs/GaAs quantum wells
without magnetic field
作者: Yu, JL (Yu, J. L.); Chen, YH (Chen, Y. H.); Liu, Y (Liu, Y.); Jiang, CY (Jiang, C. Y.); Ma, H (Ma, H.);
Zhu, LP (Zhu, L. P.); Qin, XD (Qin, X. D.)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 7 文 献 号 : 072404 DOI:
10.1063/1.4793211 出版年: FEB 18 2013
摘要: The (001)-oriented P-I-N InGaAs/GaAs quantum wells (QWs) are studied by means of
helicity dependent spin photocurrent. We have observed an unexpected circular dichroism effect
along [001] direction in the QWs without an applied magnetic field. The circular polarization rate
can be linearly tuned by the applied DC current flowing along [001] direction, and its value is
enhanced more than one order in an InGaAs/GaAs vertical-cavity surface-emitting laser with
distributed Bragg reflectors than that in a common InGaAs/GaAs QWs. This experiment indicates
a type of spin-splitting in (001)-grown P-I-N InGaAs/GaAs quantum wells induced by space
inversion asymmetry introduced by residual strain which is previously overlooked. (C) 2013
American Institute of Physics. [http://dx.doi.org/10.1063/1.4793211]
语种: English
文献类型: Article
KeyWords Plus: SPIN; SEMICONDUCTORS; EXCITATION
地址: [Yu, J. L.; Chen, Y. H.; Liu, Y.; Jiang, C. Y.; Ma, H.; Zhu, L. P.; Qin, X. D.] Chinese Acad Sci, Inst
Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: Yu, JL (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
POB 912, Beijing 100083, Peoples R China.
电子邮件地址: jlyu@semi.ac.cn; yhchen@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
973 program 2012CB921304
2013CB632805
National Natural Science Foundation of China 60990313
The work was supported by the 973 program (2012CB921304 and 2013CB632805), and the
National Natural Science Foundation of China (No. 60990313).
-------------------------------------------------------------------------------第 119 条，共 234 条
标题: In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs
self-assembled quantum dots
作者: Li, MF (Li, Mi-Feng); Yu, Y (Yu, Ying); He, JF (He, Ji-Fang); Wang, LJ (Wang, Li-Juan); Zhu, Y
(Zhu, Yan); Shang, XJ (Shang, Xiang-jun); Ni, HQ (Ni, Hai-Qiao); Niu, ZC (Niu, Zhi-Chuan)
来 源 出 版 物 : NANOSCALE RESEARCH LETTERS
卷 : 8
文 献 号 : 86
DOI:
10.1186/1556-276X-8-86 出版年: FEB 18 2013
摘要: A method to improve the growth repeatability of low-density InAs/GaAs self-assembled
quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly
to determine in situ the accurate parameters of two-to three-dimensional transitions by
observation of reflection high-energy electron diffraction patterns, and then the InAs layer
annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is
confirmed by micro-photoluminescence that control repeatability of low-density QD growth is
improved averagely to about 80% which is much higher than that of the QD samples without
using a sacrificed InAs layer.
语种: English
文献类型: Article
作者关键词: InAs quantum dots; Sacrificed InAs layer; Molecular beam epitaxy; Reflection
high-energy electron diffraction; Micro-photoluminescence; Low density
KeyWords Plus: MOLECULAR-BEAM EPITAXY; GAAS; EMISSION; STATES
地址: [Li, Mi-Feng; Yu, Ying; He, Ji-Fang; Wang, Li-Juan; Zhu, Yan; Shang, Xiang-jun; Ni, Hai-Qiao;
Niu, Zhi-Chuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,
Beijing 100083, Peoples R China.
通讯作者地址: Li, MF (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: limifeng09@semi.ac.cn; zcniu@semi.ac.cn
ISSN: 1931-7573
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 90921015
61176012
61274125
National Key Basic Research Program of China 2013CB933304
2010CB327601
2012CB932701
Chinese Academy of Sciences XDB01010200
This work is supported by the National Natural Science Foundation of China (under grant nos.
90921015, 61176012, 61274125), the National Key Basic Research Program of China (grant nos.
2013CB933304, 2010CB327601, 2012CB932701), and the Strategic Priority Research Program (B)
of the Chinese Academy of Sciences (grant no. XDB01010200).
-------------------------------------------------------------------------------第 120 条，共 234 条
标题: Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by
incorporating silver nanoparticles
作者: Liu, K (Liu, Kong); Qu, SC (Qu, Shengchun); Zhang, XH (Zhang, Xinhui); Tan, FR (Tan, Furui);
Wang, ZG (Wang, Zhanguo)
来 源 出 版 物 : NANOSCALE RESEARCH LETTERS
卷 : 8
文 献 号 : 88
DOI:
10.1186/1556-276X-8-88 出版年: FEB 18 2013
摘要: Silicon nanowire (SiNW) arrays show an excellent light-trapping characteristic and high
mobility for carriers. Surface plasmon resonance of silver nanoparticles (AgNPs) can be used to
increase light scattering and absorption in solar cells. We fabricated a new kind of SiNW/organic
hybrid solar cell by introducing AgNPs. Reflection spectra confirm the improved light scattering of
AgNP-decorated SiNW arrays. A double-junction tandem structure was designed to manufacture
our hybrid cells. Both short-circuit current and external quantum efficiency measurements show
an enhancement in optical absorption of organic layer, especially at lower wavelengths.
语种: English
文献类型: Article
作者关键词: Silicon nanowire; Silver nanoparticle; Surface plasmon resonance; Hybrid solar cell
KeyWords Plus: ARRAYS; HETEROJUNCTION
地址: [Liu, Kong; Qu, Shengchun; Tan, Furui; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond,
Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
[Zhang, Xinhui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,
Beijing 100083, Peoples R China.
通讯作者地址: Qu, SC (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: qsc@semi.ac.cn
ISSN: 1931-7573
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2012CB934200
National Natural Science Foundation of China 50990064
61076009
61204002
This work was mostly supported by the National Basic Research Program of China (grant no.
2012CB934200) and the National Natural Science Foundation of China (contract nos. 50990064,
61076009, 61204002).
-------------------------------------------------------------------------------第 121 条，共 234 条
标 题 : High-speed microwave photonic switch for millimeter-wave ultra-wideband signal
generation
作者: Wang, LX (Wang, Li Xian); Li, W (Li, Wei); Zheng, JY (Zheng, Jian Yu); Wang, H (Wang, Hui);
Liu, JG (Liu, Jian Guo); Zhu, NH (Zhu, Ning Hua)
来源出版物: OPTICS LETTERS 卷: 38 期: 4 页: 579-581 出版年: FEB 15 2013
摘要: We propose a scheme for generating millimeter-wave (MMW) ultra-wideband (UWB)
signal that is free from low-frequency components and a residual local oscillator. The system
consists of two cascaded polarization modulators and is equivalent to a high-speed microwave
photonic switch, which truncates a sinusoidal MMW into short pulses. The polarity switchability
of the generated MMW-UWB pulse is also demonstrated. (C) 2013 Optical Society of America
语种: English
文献类型: Article
地址: [Wang, Li Xian; Li, Wei; Zheng, Jian Yu; Wang, Hui; Liu, Jian Guo; Zhu, Ning Hua] Chinese
Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Wang, LX (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: lxwang@semi.ac.cn
ISSN: 0146-9592
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61275078
61108002
National Basic Research Program of China 2012CB315703
This work is partially supported by the National Natural Science Foundation of China (Grant Nos.
61275078 and 61108002) and the National Basic Research Program of China (Grant No.
2012CB315703).
-------------------------------------------------------------------------------第 122 条，共 234 条
标 题 : Widely-Tunable and Background-Free Ultra-Wideband Signals Generation Utilizing
Polarization Modulation-Based Optical Switch
作者: Du, YX (Du, Yuanxin); Zheng, JY (Zheng, Jianyu); Wang, LX (Wang, Lixian); Wang, H (Wang,
Hui); Zhu, NH (Zhu, Ninghua); Liu, JG (Liu, Jianguo)
来源出版物: IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 4 页: 335-337 DOI:
10.1109/LPT.2013.2238526 出版年: FEB 15 2013
摘要: A simple widely-tunable and background-free ultra-wideband (UWB) pulse shaper by
utilizing the polarization modulation-based optical switch is proposed and demonstrated. By
virtue of the excellent switch isolation and the complementarity between two inverted baseband
signals output from the optical switch, the local oscillator leakage signal and the low frequency
components of the obtained UWB signals are suppressed very well. The UWB pulse with center
frequency up to 28 GHz is generated.
语种: English
文献类型: Article
作者关键词: Microwave photonics; polarization modulation; ultra-wideband radio
KeyWords Plus: WAVE-FORM GENERATION; PHOTONIC GENERATION; SHAPER
地址: [Du, Yuanxin; Zheng, Jianyu; Wang, Lixian; Wang, Hui; Zhu, Ninghua; Liu, Jianguo] Chinese
Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 10083, Peoples R China.
通讯作者地址: Du, YX (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 10083, Peoples R China.
电子邮件地址: yxdu@semi.ac.cn; jyzheng@semi.ac.cn; lxwang@semi.ac.cn; whui@semi.ac.cn;
nhzhu@semi.ac.cn; jgliu@semi.ac.cn
ISSN: 1041-1135
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61090390
61275078
National Basic Research Program of China 2012CB315702
2012CB315703
Foundation for Innovative Research Groups of the National Natural Science Foundation of China
61021003
Funds for International Cooperation and Exchange of the National Natural Science Foundation of
China 60820106004
Chinese Academy of Sciences Special Grant for Postgraduate Research, Innovation, and Practice
Manuscript received November 4, 2012; revised December 19, 2012; accepted January 3, 2013.
Date of publication January 14, 2013; date of current version January 24, 2013. This work was
supported in part by the Program of the National Natural Science Foundation of China under
Grant 61090390 and Grant 61275078, in part by the National Basic Research Program of China
under Grant 2012CB315702 and Grant 2012CB315703, in part by the Foundation for Innovative
Research Groups of the National Natural Science Foundation of China under Grant 61021003, in
part by the Funds for International Cooperation and Exchange of the National Natural Science
Foundation of China under Grant 60820106004, and in part by the Chinese Academy of Sciences
Special Grant for Postgraduate Research, Innovation, and Practice.
-------------------------------------------------------------------------------第 123 条，共 234 条
标题: Synthesis of Novel Acceptor Molecules of Mono- and Multiadduct Fullerene Derivatives for
Improving Photovoltaic Performance
作者: Liu, C (Liu, Chao); Xu, L (Xu, Liang); Chi, D (Chi, Dan); Li, YJ (Li, Yongjun); Liu, HB (Liu,
Huibiao); Wang, JZ (Wang, Jizheng)
来源出版物: ACS APPLIED MATERIALS & INTERFACES 卷: 5 期: 3 页: 1061-1069 DOI:
10.1021/am3028475 出版年: FEB 13 2013
摘要: We have successfully synthesized and separated a series of tert-butyl 4-C-61-benzoate
(t-BCB) organofullerenes, including monoadduct, diadduct, and triadduct compounds, and
investigated their photophysics, electrochemistry, thermal properties, and high-performance
liquid chromatography analysis. The photovoltaic devices were fabricated based on monoadduct,
diadduct, and triadduct products, and the devices based on them exhibited power conversion
efficiencies of 2.43%, 0.48%, and 1.68%, respectively. This was the first time to study the
dependent relationship on the device performance and the different isomer numbers.
语种: English
文献类型: Article
作者关键词: bulk heterojunction; fullerene; photovoltaic property; multiadduct
KeyWords Plus: POLYMER SOLAR-CELLS; PHOTOCURRENT GENERATION; TEMPLATE TECHNIQUE;
OPTICAL-PROPERTIES;
ELECTRON-TRANSFER;
EFFICIENT;
PORPHYRIN;
TRIADS;
METHANOFULLERENE; FABRICATION
地址: [Liu, Chao; Xu, Liang; Chi, Dan; Li, Yongjun; Liu, Huibiao; Wang, Jizheng] Chinese Acad Sci,
Inst Chem, CAS Key Lab Organ Solids, BNLMS, Beijing 100190, Peoples R China.
[Liu, Chao; Xu, Liang] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.
[Chi, Dan] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R
China.
通讯作者地址: Liu, HB (通讯作者),Chinese Acad Sci, Inst Chem, CAS Key Lab Organ Solids,
BNLMS, Beijing 100190, Peoples R China.
电子邮件地址: liuhb@iccas.ac.cn
ISSN: 1944-8244
基金资助致谢:
基金资助机构 授权号
National Nature Science Foundation of China 21031006
90922007
21021091
21290190
National Basic Research 973 Program of China 2011CB932302
This work was supported by the National Nature Science Foundation of China (Grants 21031006,
90922007, 21021091, and 21290190) and the National Basic Research 973 Program of China
(Grant 2011CB932302).
-------------------------------------------------------------------------------第 124 条，共 234 条
标题: Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by
N-polar wet etching
作者: Ma, J (Ma, Jun); Wang, LC (Wang, Liancheng); Liu, ZQ (Liu, Zhiqiang); Yuan, GD (Yuan,
Guodong); Ji, XL (Ji, Xiaoli); Ma, P (Ma, Ping); Wang, JX (Wang, Junxi); Yi, XY (Yi, Xiaoyan); Wang,
GH (Wang, Guohong); Li, JM (Li, Jinmin)
来源出版物: OPTICS EXPRESS 卷: 21 期: 3 页: 3547-3556 出版年: FEB 11 2013
摘要: In this work, we reported the fabrication of nitride-based hexagonal pyramids array (HPA)
vertical-injection light emitting diodes (V-LEDs) by N-polar wet etching. The performance of HPA
V-LEDs devices was significantly improved with 30% higher internal quantum efficiency compared
with conventional roughened broad area V-LEDs. The simulated extraction efficiency by finite
difference time domain method was 20% higher than typical roughened V-LEDs. The reversed
leakage current of HPA V-LEDs was reduced due to better crystal quality, which was confirmed by
conductive atomic force microscopy measurement. Furthermore, the efficiency droop for HPA
V-LEDs were substantially alleviated. (C) 2013 Optical Society of America
语种: English
文献类型: Article
KeyWords Plus: LASER LIFT-OFF; THREADING DISLOCATIONS; EXTRACTION EFFICIENCY; GAN;
NANOSTRUCTURES
地址: [Ma, Jun; Wang, Liancheng; Liu, Zhiqiang; Yuan, Guodong; Ji, Xiaoli; Ma, Ping; Wang, Junxi;
Yi, Xiaoyan; Wang, Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond
Lighting, Beijing 100083, Peoples R China.
通讯作者地址: Ma, J (通讯作者),Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond
Lighting, Beijing 100083, Peoples R China.
电子邮件地址: spring@semi.ac.cn
ISSN: 1094-4087
基金资助致谢:
基金资助机构 授权号
National High Technology Research and Development Program of China 2011AA03A105
This work was financially supported by the National High Technology Research and Development
Program of China (No. 2011AA03A105). Jun Ma and Liancheng Wang contributed equally to this
work.
-------------------------------------------------------------------------------第 125 条，共 234 条
标题: Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode
作者: Wang, C (Wang, C.); Qu, HJ (Qu, H. J.); Chen, WX (Chen, W. X.); Ran, GZ (Ran, G. Z.); Yu, HY
(Yu, H. Y.); Niu, B (Niu, B.); Pan, JQ (Pan, J. Q.); Wang, W (Wang, W.)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 6 文 献 号 : 061112 DOI:
10.1063/1.4792508 出版年: FEB 11 2013
摘 要: Electrical plasmonic sources with compact sizes are a fundamental component in
plasmonics. Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well
Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for
the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the
electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon
generation efficiency but drops gradually as current increasing; simultaneously, the peak
wavelength red shifts evidently, which are attributed to the recombination zone shift and
quantum confinement Stark effect. (C) 2013 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4792508]
语种: English
文献类型: Article
KeyWords Plus: QUANTUM-WELLS; POLARITON AMPLIFICATION; FIELD
地址: [Wang, C.; Qu, H. J.; Chen, W. X.; Ran, G. Z.] Peking Univ, State Key Lab Mesoscop Phys,
Beijing 100871, Peoples R China.
[Wang, C.; Qu, H. J.; Chen, W. X.; Ran, G. Z.] Peking Univ, Sch Phys, Beijing 100871, Peoples R
China.
[Yu, H. Y.; Niu, B.; Pan, J. Q.; Wang, W.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond & Mat
Sci, Beijing 100083, Peoples R China.
通讯作者地址: Wang, C (通讯作者),Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871,
Peoples R China.
电子邮件地址: rangz@pku.edu.cn; jqpan@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National 863 Project 2012AA012203
National 973 program 2013CB632105
National Natural Science Foundation of China 11174018
This work was supported by the National 863 Project (No. 2012AA012203) and the National 973
program (No. 2013CB632105) and the National Natural Science Foundation of China (No.
11174018).
-------------------------------------------------------------------------------第 126 条，共 234 条
标题: Robust 3-component optical fiber accelerometer for seismic monitoring
作者: Jiang, DS (Jiang, Dongshan); Zhaug, FX (Zhaug, Faxiang); Zhang, WT (Zhang, Wentao); Li, F
(Li, Feng); Li, F (Li, Fang)
来 源 出 版 物 : CHINESE OPTICS LETTERS 卷 : 11 期 : 2 文 献 号 : 020602 DOI:
10.3788/COL201311.020602 出版年: FEB 10 2013
摘要: A robust cantilever-based push pull 3-component (3-C) optical fiber accelerometer is
proposed and experimentally demonstrated. Sensitivity and resonance frequency can be
enhanced simultaneously by increasing the number of turns of an optical fiber without increasing
the accelerometer size at the mass of a certain value. The calibration results show that axis
sensitivity is 45 dB (re: 0 dB = 1 rad/g), with a fluctuation less than 0.9 dB in a frequency
bandwidth of 10-450 Hz. The cross sensitivity is approximately 15 dB, with a fluctuation less than
1.2 dB in a frequency bandwidth of 10-450 Hz. The crosstalk reaches up to 30 dB. Fluctuation of
the responses of the acceleration sensitivity of different components is less than 0.7 dB over a
frequency bandwidth of 10 -450 Hz, which proves the good consistency of the 3-C optical fiber
accelerometer. By usingan all-metal structure is expected to improve the reliability of the
designed accelerometer for long-term use in harsh environments. These desirable features show
that the proposed 3-C optical fiber accelerometer is satisfactory for seismic wave monitoringin oil
and gas exploration.
语种: English
文献类型: Article
地址: [Jiang, Dongshan; Zhaug, Faxiang; Zhang, Wentao; Li, Feng; Li, Fang] Chinese Acad Sci, Inst
Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.
通讯作者地址: Zhang, WT (通讯作者),Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab,
Beijing 100083, Peoples R China.
电子邮件地址: zhangwt@semi.ac.cn
ISSN: 1671-7694
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 41074128
61077059
Beijing Science and Technology New Star Program 2010B055
This work was supported by the National Natural Science Foundation of China (Nos. 41074128
and 61077059) and the Beijing Science and Technology New Star Program (No. 2010B055).
-------------------------------------------------------------------------------第 127 条，共 234 条
标 题 : Ultra-compact and fabrication-tolerant polarization rotator based on a bend
asymmetric-slab waveguide
作者: Cao, TT (Cao, Tongtong); Chen, SW (Chen, Shaowu); Fei, YH (Fei, Yonghao); Zhang, LB
(Zhang, Libin); Xu, QY (Xu, Qing-Yang)
来源出版物: APPLIED OPTICS 卷: 52 期: 5 页: 990-996 出版年: FEB 10 2013
摘要: We propose and analyze a polarization rotator based on a bend asymmetric-slab
waveguide on the silicon-on-insulator platform. The device can be fabricated using standard
complementary metal-oxide-semiconductor process involving only two dry etching steps.
Compared with the formerly reported polarization rotators based on two-step etching, our
introduced device demonstrates a significant improvement for fabrication tolerance.
Furthermore, an ultra compact structure of similar to 5 mu m conversion length, an insertion loss
of only 0.5 dB, and an extinction ratio of >40 dB for both TE to TM polarization conversion and
TM to TE polarization conversion are exhibited. Operation wavelength and the influence of
environmental temperature on our device are also discussed. (C) 2013 Optical Society of America
语种: English
文献类型: Article
KeyWords Plus: CONVERTER
地址: [Cao, Tongtong; Chen, Shaowu; Fei, Yonghao; Zhang, Libin; Xu, Qing-Yang] Chinese Acad Sci,
Inst Semicond, State Key Lab Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Chen, SW (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Optoelect,
Beijing 100083, Peoples R China.
电子邮件地址: swchen@semi.ac.cn
ISSN: 1559-128X
基金资助致谢:
基金资助机构 授权号
State Key Development Program for Basic Research of China 2007CB613405
National Natural Science Foundation of China 60877013
61021003
60837001
This work was supported by the State Key Development Program for Basic Research of China (No.
2007CB613405), and the National Natural Science Foundation of China (Grant Nos. 60877013,
61021003, and 60837001).
-------------------------------------------------------------------------------第 128 条，共 234 条
标题: Temperature dependence of anisotropic mode splitting induced by birefringence in an
InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference
spectroscopy
作者: Yu, JL (Yu, Jinling); Chen, YH (Chen, Yonghai); Cheng, SY (Cheng, Shuying); Lai, YF (Lai,
Yunfeng)
来源出版物: APPLIED OPTICS 卷: 52 期: 5 页: 1035-1040 出版年: FEB 10 2013
摘要: The temperature dependence of the mode splitting induced by birefringence in an
InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser has been studied by reflectance
difference spectroscopy at different temperatures ranging from 80 to 330 K. The anisotropic
broadening width and the anisotropic integrated area of the cavity mode under different
temperatures are also determined. The relation between the mode splitting and the
birefringence is obtained by theoretical calculation using a Jones matrix approach. The
temperature dependence of the energy position of the cavity mode and the quantum well
transition are also determined by nearly normal reflectance and photoluminescence, respectively.
(C) 2013 Optical Society of America
语种: English
文献类型: Article
KeyWords Plus: PHOTOMODULATED REFLECTANCE; POLARIZATION; VCSELS; PHOTOREFLECTANCE;
REFLECTIVITY; DYNAMICS; GAAS
地址: [Yu, Jinling; Cheng, Shuying; Lai, Yunfeng] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou
350108, Fujian Province, Peoples R China.
[Yu, Jinling; Cheng, Shuying; Lai, Yunfeng] Fuzhou Univ, Inst Micro Nano Devices & Solar Cells,
Fuzhou 350108, Fujian Province, Peoples R China.
[Chen, Yonghai] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,
Peoples R China.
通讯作者地址: Yu, JL (通讯作者),Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian
Province, Peoples R China.
电子邮件地址: jlyu@semi.ac.cn; yhchen@semi.ac.cn
ISSN: 1559-128X
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60990313
973 program 2012CB921304
2012CB619306
863 program 2011AA 03A 101
We thank professor Guofeng Song, Xin Wei and Qing Wang for providing the sample. The work
was supported by the National Natural Science Foundation of China (No. 60990313), the 973
program (2012CB921304, 2012CB619306), and the 863 program (2011AA 03A 101).
-------------------------------------------------------------------------------第 129 条，共 234 条
标题: Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar
作者: Cheng, F (Cheng, Fang); Lin, LZ (Lin, L. Z.); Zhang, LB (Zhang, L. B.); Zhou, GH (Zhou,
Guanghui)
来 源出版 物: JOURNAL OF APPLIED PHYSICS 卷: 113 期: 5 文 献号: 053708 DOI:
10.1063/1.4790325 出版年: FEB 7 2013
摘要: We demonstrate theoretically electrical switching of the edge state transport via a
transverse electric field in a quantum spin Hall bar. By tuning the electric fields, the Fermi energy
and the gate voltage, the edge channels in the both topological insulator (TI)/band insulator (BI)
and TI/TI p-n junctions can be transited from opaque to transparent. This electrical switching
behavior offers us an efficient way to control the topological edge state transport which is robust
against the local perturbation. (C) 2013 American Institute
of
Physics.
[http://dx.doi.org/10.1063/1.4790325]
语种: English
文献类型: Article
KeyWords Plus: WELLS
地址: [Cheng, Fang] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004,
Hunan, Peoples R China.
[Cheng, Fang; Lin, L. Z.] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.
[Zhang, L. B.; Zhou, Guanghui] Hunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples
R China.
[Zhang, L. B.; Zhou, Guanghui] Hunan Normal Univ, Key Lab Low Dimens Quantum Struct &
Manipulat, Changsha 410081, Hunan, Peoples R China.
通讯作者地址: Cheng, F (通讯作者),Changsha Univ Sci & Technol, Dept Phys & Elect Sci,
Changsha 410004, Hunan, Peoples R China.
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
NSFC 11004017
11104263
11274108
Scientific Research Fund of Hunan Provincial Education Department 12B010
Foundation for University Key Teacher by the Ministry of Education, Science and Technology
Innovative Research Team in Higher Educational Institutions of Hunan Province
construct program of the key discipline in Hunan Province
This work is partly supported by the NSFC Grant Nos. 11004017, 11104263, 11274108, Scientific
Research Fund of Hunan Provincial Education Department 12B010, Foundation for University Key
Teacher by the Ministry of Education, Science and Technology Innovative Research Team in
Higher Educational Institutions of Hunan Province and the construct program of the key discipline
in Hunan Province.
-------------------------------------------------------------------------------第 130 条，共 234 条
标题: Electrical transport properties of boron-doped single-walled carbon nanotubes
作者: Li, YF (Li, Y. F.); Wang, Y (Wang, Y.); Chen, SM (Chen, S. M.); Wang, HF (Wang, H. F.); Kaneko,
T (Kaneko, T.); Hatakeyama, R (Hatakeyama, R.)
来源 出版物: JOURNAL OF APPLIED PHYSICS 卷 : 113 期: 5 文献 号: 054313 DOI:
10.1063/1.4790505 出版年: FEB 7 2013
摘要: The transport properties of B-doped single-walled carbon nanotubes (SWNTs) are studied
from both experimental and theoretical standpoints. Experimentally, it is found that the
semiconducting behavior of SWNTs is drastically changed after B-doping, and the unusual abrupt
current drops are observed at low temperatures, which may imply the possibility of
superconducting transition in B-doped SWNTs. Using the density-functional tight-binding
calculation, it is observed that B-doping induces the presence of density of state peaks near the
Fermi level which shifts toward the valence band region, showing a clear charge-transfer
characteristic, which agrees well with the experimental observations. (C) 2013 American Institute
of Physics. [http://dx.doi.org/10.1063/1.4790505]
语种: English
文献类型: Article
地址: [Li, Y. F.] China Univ Petr, State Key Lab Heavy Oil Proc, Beijing 102249, Changping, Peoples
R China.
[Li, Y. F.; Kaneko, T.; Hatakeyama, R.] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579,
Japan.
[Wang, Y.] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Rare Earth Resource
Utilizat, Changchun 130022, Peoples R China.
[Chen, S. M.] Chinese Acad Sci, Inst Proc Engn, Beijing 100190, Peoples R China.
[Wang, H. F.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Li, YF (通讯作者),China Univ Petr, State Key Lab Heavy Oil Proc, Beijing 102249,
Changping, Peoples R China.
电子邮件地址: liyongfeng2004@yahoo.com.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 21106184
Science Foundation Research Funds YJRC-2011-18
Thousand Talents Program
This work was supported by the National Natural Science Foundation of China (No. 21106184),
the Science Foundation Research Funds Provided to New Recruitments of China University of
Petroleum, Beijing (No. YJRC-2011-18), and Thousand Talents Program.
-------------------------------------------------------------------------------第 131 条，共 234 条
标题: Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0
1 1)-oriented vanadium dioxide films grown by magnetron sputtering
作者: Yu, Q (Yu, Qian); Li, WW (Li, Wenwu); Liang, JR (Liang, Jiran); Duan, ZH (Duan, Zhihua); Hu,
ZG (Hu, Zhigao); Liu, J (Liu, Jian); Chen, HD (Chen, Hongda); Chu, JH (Chu, Junhao)
来源出版物: JOURNAL OF PHYSICS D-APPLIED PHYSICS 卷: 46 期: 5 文献号: 055310 DOI:
10.1088/0022-3727/46/5/055310 出版年: FEB 6 2013
摘要: The metal-insulator transition behaviour of vanadium dioxide (VO2) films grown at
different oxygen pressures is investigated. With the aid of temperature-dependent electrical and
infrared transmittance experiments, it is found that the transition temperature in the heating
process goes up with increasing argon-oxygen ratio, whereas the one in the cooling process
shows an inverse variation trend. It is found that the hysteresis width of the phase transition is
narrowed at a lower argon-oxygen ratio because the defects introduced by excess oxygen lower
the energy requirement of transformation. Furthermore, the defects reduce the forbidden gap of
the VO2 system due to the generation of a V5+ ion. The present results are valuable for the
achievement of VO2-based optoelectronic devices.
语种: English
文献类型: Article
KeyWords Plus: PHASE-TRANSITION; OPTICAL-PROPERTIES; MOTT TRANSITION; BAND THEORY;
VO2; NANOPARTICLES; SPECTROSCOPY; SAPPHIRE; PEIERLS; HUBBARD
地址: [Yu, Qian; Li, Wenwu; Duan, Zhihua; Hu, Zhigao; Chu, Junhao] E China Normal Univ, Key Lab
Polar Mat & Devices, Minist Educ, Dept Elect Engn, Shanghai 200241, Peoples R China.
[Liang, Jiran; Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,
Beijing 100083, Peoples R China.
[Liu, Jian] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing
100083, Peoples R China.
[Liang, Jiran] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China.
通讯作者地址: Hu, ZG (通讯作者),E China Normal Univ, Key Lab Polar Mat & Devices, Minist
Educ, Dept Elect Engn, Shanghai 200241, Peoples R China.
电子邮件地址: zghu@ee.ecnu.edu.cn
ISSN: 0022-3727
基金资助致谢:
基金资助机构 授权号
Major State Basic Research Development Programme of China 2011CB922200
2013CB922300
Natural Science Foundation of China 11074076
60906046
61106122
Projects of Science and Technology Commission of Shanghai Municipality 11520701300
10DJ1400201
10SG28
PCSIRT
Programme for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of
Higher Learning
This work was financially supported by the Major State Basic Research Development Programme
of China (Grant Nos 2011CB922200 and 2013CB922300), the Natural Science Foundation of China
(Grant Nos 11074076, 60906046 and 61106122), the Projects of Science and Technology
Commission of Shanghai Municipality (Grant Nos 11520701300, 10DJ1400201 and 10SG28),
PCSIRT, and the Programme for Professor of Special Appointment (Eastern Scholar) at Shanghai
Institutions of Higher Learning.
-------------------------------------------------------------------------------第 132 条，共 234 条
标题: Scattering due to large cluster embedded in quantum wells
作者: Liu, CB (Liu, Changbo); Zhao, GJ (Zhao, Guijuan); Liu, GP (Liu, Guipeng); Song, YF (Song,
Yafeng); Zhang, H (Zhang, Heng); Jin, DD (Jin, Dongdong); Li, ZW (Li, Zhiwei); Liu, XL (Liu, Xianglin);
Yang, SY (Yang, Shaoyan); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 5 文 献 号 : 052105 DOI:
10.1063/1.4782218 出版年: FEB 4 2013
摘要: Two dimensional electron gas mobility limited by the scattering of large cluster is studied.
From this study, we find that the scattering caused by conduction band offset between host well
and multiple mini-quantum well (mini-QW) series aligned along the QW channel, i.e., quantum
pits, can be treated as a variable in our calculation. The results show that the mobility increases
with increasing barrier height, which is opposite to the well-known interface roughness scattering
mobility. To make the calculation simple, the InxGa1-xN/InyGa1-yN QW double-heterostructure is
selected to along (11 (2) over bar0) non-polarized direction, along which the barrier and well are
both flat. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4782218]
语种: English
文献类型: Article
KeyWords Plus: 2-DIMENSIONAL ELECTRON-GAS; TRANSPORT; DOTS
地址: [Liu, Changbo; Zhao, Guijuan; Liu, Guipeng; Song, Yafeng; Zhang, Heng; Jin, Dongdong; Li,
Zhiwei; Liu, Xianglin; Yang, Shaoyan; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst
Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: Liu, CB (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
POB 912, Beijing 100083, Peoples R China.
电子邮件地址: liuchb@semi.ac.cn; qszhu@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Science Foundation of China 91233111
11275228
61006004
61076001
60976008
10979507
Special Funds for Major State Basic Research Project (973 program) of China A000091109-05
863 High Technology R&D Program of China 2011AA03A101
This work was supported by National Science Foundation of China (Nos. 91233111, 11275228,
61006004, 61076001, 60976008, and 10979507), and by Special Funds for Major State Basic
Research Project (973 program) of China (No. A000091109-05), and also by the 863 High
Technology R&D Program of China (No. 2011AA03A101).
-------------------------------------------------------------------------------第 133 条，共 234 条
标题: Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs
作者: Zhang, YB (Zhang, Yanbo); Du, YD (Du, Yandong); Chen, YK (Chen, Yankun); Li, XM (Li,
Xiaoming); Yang, X (Yang, Xiang); Han, WH (Han, Weihua); Yang, FH (Yang, Fuhua)
来源出版物: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 卷: 13 期: 2 页: 804-807
DOI: 10.1166/jnn.2013.6074 出版年: FEB 2013
摘要: In this work, accumulation-mode (AM) p-channel wrap-gated FinFETs and AM p-channel
planar FETs are fabricated using top-down strategies, and compared in performance at
temperatures from 6 K to 295 K. The threshold voltage variation of the AM wrap-gated FinFET is
slightly larger than that of the AM planar FET. The drain current and the peak transconductance
in the AM wrap-gated FinFET are larger than those in the AM planar FET, and those differences
are temperature dependent. We attribute those to the body current enhancement in the AM
wrap-gated FinFET as temperature increases. The subthreshold swings (SS) of both types of the
FETs improve with temperature decreasing and get lower than 10 mV/dec at 6 K. The higher SS in
the AM wrap-gated FinFET is likely due to a high interface state density at the fin sidewalls arising
from the fin patterning induced defects.
语种: English
文献类型: Article
作者关键词: Low-Temperature; Accumulation Mode; Multi-Gate; FinFET; Volume Accumulation
KeyWords Plus: SOI MOSFETS
地址: [Zhang, Yanbo; Du, Yandong; Chen, Yankun; Li, Xiaoming; Yang, Xiang; Han, Weihua; Yang,
Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083,
Peoples R China.
[Zhang, Yanbo] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China.
[Yang, Fuhua] State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Han, WH (通讯作者),Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond
Integrat Technol, Beijing 100083, Peoples R China.
ISSN: 1533-4880
基金资助致谢:
基金资助机构 授权号
national high technology research and development program of China 2007AA03Z303
National Basic Research Program of China 2010CB934104
The authors acknowledge the projects supported by the national high technology research and
development program of China (No. 2007AA03Z303) and National Basic Research Program of
China (No. 2010CB934104).
-------------------------------------------------------------------------------第 134 条，共 234 条
标题: Formation and Characterization of Multilayer GeSi Nanowires on Miscut Si (001) Substrates
作者: Gong, H (Gong, Hua); Chen, PX (Chen, Peixuan); Ma, YJ (Ma, Yingjie); Wang, LJ (Wang, Lijun);
Rastelli, A (Rastelli, Armando); Schmidt, OG (Schmidt, Oliver G.); Zhong, ZY (Zhong, Zhenyang)
来源出版物: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 卷: 13 期: 2 页: 834-838
DOI: 10.1166/jnn.2013.5979 出版年: FEB 2013
摘要: A multilayer of GeSi nanowires separated with Si spacers was readily self-assembled on
miscut Si (001) substrates with 8 degrees off toward < 110 >. The nanowires oriented along the
miscut direction were very small and compactly arranged on the vicinal surface. Systematic
photoluminescence (PL) spectroscopy studies were carried out on the GeSi nanowires. With
increasing excitation power, a sublinear power dependent PL intensity and a blue-shift of similar
to 7 meV/decade with nearly constant full width of half maximum (FWHM) of PL peaks from
multilayer GeSi nanowires was observed. These results indicated a typical type-II band alignment
of GeSi nanowires/Si. The blue-shift was attributed to band bending effect with the increase of
photon-generated carriers. The nearly independent FWHM of PL peaks with the excitation power
was explained in terms of the formation of mini-band due to strong coupling of holes in closely
neighboring nanowires. An activation energy of similar to 12 meV was extracted from the
temperature-dependent intensity of PL peaks of the nanowires, which was assigned to be the
exciton binding energy around the nanowires. Based on Raman spectra, the Ge content in GeSi
nanowires was estimated to be similar to 61%.
语种: English
文献类型: Article
作者关键词: Nanowires; Self-Assembly; Miscut Substrate; Photoluminescence; Raman Spectra
KeyWords Plus: QUANTUM DOTS; PHOTOLUMINESCENCE; GROWTH
地址: [Gong, Hua; Ma, Yingjie; Zhong, Zhenyang] Fudan Univ, State Key Lab Surface Phys,
Shanghai 200433, Peoples R China.
[Gong, Hua; Ma, Yingjie; Zhong, Zhenyang] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R
China.
[Chen, Peixuan; Rastelli, Armando; Schmidt, Oliver G.] IFW Dresden, Inst Integrat Nanosci,
D-01069 Dresden, Germany.
[Wang, Lijun] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Zhong, ZY (通讯作者),Fudan Univ, State Key Lab Surface Phys, Shanghai 200433,
Peoples R China.
ISSN: 1533-4880
基金资助致谢:
基金资助机构 授权号
Natural Science Foundation of China (NSFC) 10974031
special funds for Major State Basic Research Project of China
G2009CB929300
P. Chen acknowledges Fei Ding and Santosh Kumar for their help with the PL measurement. This
work was supported by the Natural Science Foundation of China (NSFC) under Project No.
10974031, and by the special funds for Major State Basic Research Project No. G2009CB929300
of China.
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标 题 : Polystyrene-Microsphere-Assisted Patterning of ZnO Nanostructures: Growth and
Characterization
作者: Dong, JJ (Dong, J. J.); Zhang, XW (Zhang, X. W.); Zhang, SG (Zhang, S. G.); Tan, HR (Tan, H.
R.); Yin, ZG (Yin, Z. G.); Gao, Y (Gao, Y.); Wang, JX (Wang, J. X.)
来源出版物: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 卷: 13 期: 2 页:
1101-1105 DOI: 10.1166/jnn.2013.5980 出版年: FEB 2013
摘要: In this work, periodic arrays of various ZnO nanostructures were fabricated on both Si and
GaN substrates via a facile hydrothermal process. To realize the site-specific growth, two kinds of
masks were introduced. The polystyrene (PS) microsphere self-assembled monolayer (SAM) was
employed as the mask to create a patterned seed layer to guide the growth of ZnO
nanostructures. However, the resulting ZnO nanostructures are non-equidistant, and the
diameter of the ZnO nanostructures is uncontrollable. As an alternative, TiO2 sol was used to
replicate the PS microsphere SAM, and the inverted SAM (ISAM) mask was obtained by extracting
the PS microspheres with toluene. By using the ISAM mask, the hexagonal periodic array of ZnO
nanostructures with high uniformity were readily produced. Furthermore, the effect of the
underlying substrates on the morphology of ZnO nanostructures has been investigated. It is found
that the highly ordered and vertically aligned ZnO nanorods epitaxially grow on the GaN substrate,
while the ZnO nanoflowers on Si substrates are random oriented.
语种: English
文献类型: Article
作者关键词: Nanosphere Lithography; Zinc Oxide; Self-Assembled Monolayer
KeyWords Plus: NANOWIRE ARRAYS; NANOROD ARRAYS; ZINC-OXIDE; TEMPERATURE; TEMPLATE;
ROUTE; WAFER
地址: [Dong, J. J.; Zhang, X. W.; Zhang, S. G.; Tan, H. R.; Yin, Z. G.; Gao, Y.] Chinese Acad Sci, Inst
Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
[Wang, J. X.] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol R&D Ctr, Beijing 100083,
Peoples R China.
通讯作者地址: Zhang, XW (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat
Sci, Beijing 100083, Peoples R China.
ISSN: 1533-4880
基金资助致谢:
基金资助机构 授权号
"863" project of China 2009AA03Z305
National Basic Research Program of China 2012CB934200
National Natural Science Foundation of China 60876031
51071145
This work was financially supported by the "863" project of China (No. 2009AA03Z305), the
National Basic Research Program of China (Nos. 2012CB934200) and the National Natural Science
Foundation of China (No. 60876031, 51071145).
-------------------------------------------------------------------------------第 136 条，共 234 条
标题: Highly nonlinear property and threshold voltage of Sc2O3 doped ZnO-Bi2O3-based varistor
ceramics
作者: Xu, D (Xu Dong); Wu, JT (Wu Jieting); Jiao, L (Jiao Lei); Xu, HX (Xu Hongxing); Zhang, PM
(Zhang Peimei); Yu, RH (Yu Renhong); Cheng, XN (Cheng Xiaonong)
来 源 出 版 物 : JOURNAL OF RARE EARTHS
卷 : 31
期: 2
页 : 158-163
DOI:
10.1016/S1002-0721(12)60251-8 出版年: FEB 2013
摘要: A series of ZnO-Bi2O3-based varistor ceramics doped with 0-0.4 mol.% Sc2O3 were
prepared by high-energy ball milling and sintered at temperatures between 1000 and 1150
degrees C. X-ray diffractometry (XRD) and scanning electron microscopy (SEM) were applied to
characterize the phases and microstructure of the varistor ceramics. A DC parameter instrument
for varistor ceramics was applied to investigate the electronic properties and V-I characteristics.
The results showed that there were no changes in crystal structure with Sc2O3-doped varistor
ceramics and that the average size of ZnO grain increased first and then decreased. The best
electronic characteristics of the varistor ceramics prepared by high-energy ball milling were found
in 0.3 mol.% Sc2O3-doped ZnO-Bi2O3-based ceramics sintered at 1000 degrees C, which
exhibited a threshold voltage of 821 V/mm, nonlinear coefficient of 62.1 and leakage current of
0.16 mu A.
语种: English
文献类型: Article
作者关键词: ceramics; varistors; rare earth alloys and compounds; microstructure; electrical
properties
KeyWords Plus: ZNO-BASED VARISTORS; ELECTRICAL-PROPERTIES; SINTERING TEMPERATURE;
ZNO-PR6O11-BASED VARISTORS; MICROSTRUCTURAL PROPERTIES; DIELECTRIC-PROPERTIES;
CACU3TI4O12 CERAMICS; OXIDE; STABILITY; ER2O3
地址: [Xu Dong; Wu Jieting; Jiao Lei; Xu Hongxing; Zhang Peimei; Yu Renhong; Cheng Xiaonong]
Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China.
[Xu Dong] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R
China.
[Xu Dong] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049,
Peoples R China.
[Xu Dong] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic,
Chengdu 610054, Peoples R China.
[Xu Dong] Jiangsu Univ, Changzhou Engn Res Inst, Changzhou 213000, Peoples R China.
[Zhang Peimei; Yu Renhong] Changzhou Ming Errui Ceram Co Ltd, Changzhou 213102, Peoples R
China.
通讯作者地址: Xu, D (通讯作者),Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R
China.
电子邮件地址: frank@ujs.edu.cn
ISSN: 1002-0721
基金资助致谢:
基金资助机构 授权号
Natural Science Foundation of Jiangsu Province BK2011243
BK2012156
Specialized Research Fund for the Doctoral Program of Higher Education of China
20123227120021
Universities Natural Science Research Project of Jiangsu Province 10KJD430002
State Key Laboratory of Electrical Insulation and Power Equipment EIPE11204
State Key Laboratory of New Ceramic and Fine Processing KF201104
Opening Project of State key Laboratory of Electronic Thin Films and Integrated Devices
KFJJ201105
Research Foundation of Jiangsu University 11JDG084
Application Program for Basic Research of Changzhou CJ20125001
Project supported by Natural Science Foundation of Jiangsu Province (BK2011243, BK2012156),
the Specialized Research Fund for the Doctoral Program of Higher Education of
China(20123227120021) and Universities Natural Science Research Project of Jiangsu Province
(10KJD430002)
This work was financially supported by the State Key Laboratory of Electrical Insulation and Power
Equipment (EIPE11204), State Key Laboratory of New Ceramic and Fine Processing (KF201104),
Project supported by the Opening Project of State key Laboratory of Electronic Thin Films and
Integrated Devices (KFJJ201105), Research Foundation of Jiangsu University (11JDG084) and
Application Program for Basic Research of Changzhou (CJ20125001).
-------------------------------------------------------------------------------第 137 条，共 234 条
标题: Radial n-i-p structure silicon nanowire-based solar cells on flexible stainless steel substrates
作者: Xie, XB (Xie, Xiaobing); Zeng, XB (Zeng, Xiangbo); Yang, P (Yang, Ping); Li, H (Li, Hao); Li, JY
(Li, Jingyan); Zhang, XD (Zhang, Xiaodong); Wang, QM (Wang, Qiming)
来源出版物: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 卷: 210 期: 2
页: 341-344 DOI: 10.1002/pssa.201228595 出版年: FEB 2013
摘要: Radial n-i-p structure silicon nanowires-(SiNWs) based solar cells on flexible stainless steel
substrates have been fabricated by plasma-enhanced chemical vapor deposition (PECVD). The
highest open-circuit voltage (V-oc) and short-circuit current density (J(sc)) for AM 1.5 illumination
were 0.62 V and 13.36 mA cm(-2), respectively, at a maximum power conversion efficiency of
3.56%. The optical reflectance of the SiNWs solar cells over a broad rang of wavelengths
(300-1000 nm) is reduced by similar to 80% in average compared to planar silicon thin film cells.
The external quantum efficiency (EQE) measurements show that the EQE response of SiNWs solar
cells is improved greatly in the wavelength range of 550-750 nm compared to corresponding
planar silicon thin film solar cells. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
语种: English
文献类型: Article
作者关键词: flexible substrates; radial structure; silicon nanowires; solar cells
KeyWords Plus: CRYSTALLINE SILICON
地址: [Xie, Xiaobing; Zeng, Xiangbo; Yang, Ping; Li, Hao; Li, Jingyan; Zhang, Xiaodong; Wang,
Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,
Peoples R China.
通讯作者地址: Xie, XB (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: xbxie@semi.ac.cn
ISSN: 1862-6300
基金资助致谢:
基金资助机构 授权号
National High Technology Research and Development Program (863 Program) of China
2011AA050504
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics,
Chinese Academy of Sciences 12JG01
This work was financially supported by National High Technology Research and Development
Program (863 Program) of China (No. 2011AA050504) and Key Laboratory of Nanodevices and
Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (No.
12JG01).
--------------------------------------------------------------------------------
第 138 条，共 234 条
标题: Vertical cavity surface emitting laser transverse mode and polarization control by elliptical
hole photonic crystal
作者: Cao, T (Cao Tian); Xu, C (Xu Chen); Xie, YY (Xie Yi-Yang); Kan, Q (Kan Qiang); Wei, SM (Wei
Si-Min); Mao, MM (Mao Ming-Ming); Chen, HD (Chen Hong-Da)
来 源 出 版 物 : CHINESE PHYSICS B
卷 : 22
期: 2
文 献 号 : 024205
DOI:
10.1088/1674-1056/22/2/024205 出版年: FEB 2013
摘要: The polarization of traditional photonic crystal (PC) vertical cavity surface emitting laser
(VCSEL) is uncontrollable, resulting in the bit error increasing easily. Elliptical hole photonic crystal
can control the transverse mode and polarization of VCSEL efficiently. We analyze the far field
divergence angle, and birefringence of elliptical hole PC VCSEL. When the ratio of minor axis to
major axis b/a = 0.7, the PC VCSEL can obtain single mode and polarization. According to the
simulation results, we fabricate the device successfully. The output power is 1.7 mW, the far field
divergence angle is less than 10 degrees, and the side mode suppression ratio is over 30 dB. The
output power in the Y direction is 20 times that in the X direction.
语种: English
文献类型: Article
作者关键词: photonic crystal; vertical cavity surface emitting laser (VCSEL); elliptical holes; single
mode; polarization control
KeyWords Plus: FIBER
地址: [Cao Tian; Xu Chen; Xie Yi-Yang; Wei Si-Min; Mao Ming-Ming] Beijing Univ Technol, Key Lab
Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China.
[Xie Yi-Yang; Kan Qiang; Chen Hong-Da] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Xu, C (通讯作者),Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ,
Beijing 100124, Peoples R China.
电子邮件地址: xuchen58@bjut.edu.cn
ISSN: 1674-1056
基金资助致谢:
基金资助机构 授权号
National High Technology Research and Development Program of China 2008AA03Z402
Beijing Municipal Natural Science Foundation, China 4092007
4112006
4102003
4132006
National Natural Science Foundation of China 61076044
61036002
61036009
60978067
Ministry of Education of China 20121103110018
Project supported by the National High Technology Research and Development Program of China
(Grant No. 2008AA03Z402), the Beijing Municipal Natural Science Foundation, China (Grant Nos.
4092007, 4112006, 4102003, and 4132006), the National Natural Science Foundation of China
(Grant Nos. 61076044, 61036002, 61036009, and 60978067) and the Doctoral Fund of the
Ministry of Education of China (Grant No. 20121103110018).
-------------------------------------------------------------------------------第 139 条，共 234 条
标 题 : 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally
undulating step-graded InAsyP(1-y)buffers
作者: Ji, L (Ji Lian); Lu, SL (Lu Shu-Long); Jiang, DS (Jiang De-Sheng); Zhao, YM (Zhao Yong-Ming);
Tan, M (Tan Ming); Zhu, YQ (Zhu Ya-Qi); Dong, JR (Dong Jian-Rong)
来 源 出 版 物 : CHINESE PHYSICS B
卷 : 22
期: 2
文 献 号 : 026802
DOI:
10.1088/1674-1056/22/2/026802 出版年: FEB 2013
摘要: Single-junction, lattice-mismatched In0.69Ga0.31As thermophotovoltaic (TPV) devices each
with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour
deposition (MOCVD). Compositionally undulating step-graded InAsyP1-y buffer layers with a
lattice mismatch of similar to 1.2% are used to mitigate the effect of lattice mismatch between
the device layers and the InP substrate. With an optimized buffer thickness, the In0.69Ga0.31As
active layers grown on the buffer display a high crystal quality with no measurable tetragonal
distortion. High-performance single-junction devices are demonstrated, with an open-circuit
voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current
density of 47.6 mA/cm(2), which are measured under the standard solar simulator of air mass
1.5-global (AM 1.5 G).
语种: English
文献类型: Article
作者关键词: In0.69Ga0.39As; thermophotovoltaic devices; InAsyP1-y buffer
KeyWords Plus: MOLECULAR-BEAM EPITAXY; HIGH-PERFORMANCE; INASYP1-Y; BUFFERS; LAYERS;
INP
地址: [Ji Lian; Lu Shu-Long; Zhao Yong-Ming; Tan Ming; Zhu Ya-Qi; Dong Jian-Rong] Chinese Acad
Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215125, Peoples
R China.
[Jiang De-Sheng] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing
100083, Peoples R China.
通讯作者地址: Lu, SL (通讯作者),Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab
Nanodevices & Applicat, Suzhou 215125, Peoples R China.
电子邮件地址: sllu2008@sinano.ac.cn
ISSN: 1674-1056
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 61176128
Knowledge Innovation Project of the Chinese Academy of Sciences
Suzhou Municipal Solar Cell Research Project, China SYG201145
Project supported by the National Basic Research Program of China (Grant No. 61176128), the
Knowledge Innovation Project of the Chinese Academy of Sciences, and Suzhou Municipal Solar
Cell Research Project, China (Grant No. SYG201145).
-------------------------------------------------------------------------------第 140 条，共 234 条
标题: Annealing effect on magnetic anisotropy in ultrathin (Ga, Mn)As
作者: Li, YY (Li Yan-Yong); Wang, HF (Wang Hua-Feng); Cao, YF (Cao Yu-Fei); Wang, KY (Wang
Kai-You)
来 源 出 版 物 : CHINESE PHYSICS B
卷 : 22
期: 2
文 献 号 : 027504
DOI:
10.1088/1674-1056/22/2/027504 出版年: FEB 2013
摘要: We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm
ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance
(PHR). Obvious hysteresis loops were observed during the magnetization reversal through the
clockwise and counterclockwise rotations under low magnetic fields (below 1000 Gs, 1 Gs = 10(-4)
T), which can be explained by competition between Zeeman energy and magnetic anisotropic
energy. It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic
range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one. The cubic
anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after
annealing. This gives a useful way to tune the magnetic anisotropy of ultrathin (Ga,Mn)As
devices.
语种: English
文献类型: Article
作者关键词: magnetic anisotropy; planar Hall resistance; ultrathin (Ga, Mn)As
KeyWords Plus: (GA,MN)AS
地址: [Li Yan-Yong; Wang Hua-Feng; Cao Yu-Fei; Wang Kai-You] Chinese Acad Sci, Inst Semicond,
State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
通 讯 作 者 地 址 : Wang, KY ( 通 讯 作 者 ),Chinese Acad Sci, Inst Semicond, State Key Lab
Superlattices & Microstruct, Beijing 100083, Peoples R China.
电子邮件地址: kywang@semi.ac.cn
ISSN: 1674-1056
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CB922200
National Natural Science Foundation of China 11174272
Engineering and Physical Sciences Research Council-National Natural Science Foundation Joint
10911130232/A0402
Chinese Academy of Sciences
Project supported by the National Basic Research Program of China (Grant No. 2011CB922200),
the National Natural Science Foundation of China (Grant No. 11174272), and the Engineering and
Physical Sciences Research Council-National Natural Science Foundation Joint (Grant No.
10911130232/A0402).
Wang Kai-You acknowledges support of the Chinese Academy of Sciences' "100 Talent Program."
-------------------------------------------------------------------------------第 141 条，共 234 条
标题: The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar
Cells
作者: Li, L (Li Liang); Zhao, DG (Zhao De-Gang); Jiang, DS (Jiang De-Sheng); Liu, ZS (Liu Zong-Shun);
Chen, P (Chen Ping); Wu, LL (Wu Liang-Liang); Le, LC (Le Ling-Cong); Wang, H (Wang Hui); Yang, H
(Yang Hui)
来 源 出 版 物 : CHINESE PHYSICS LETTERS 卷 : 30 期 : 2 文 献 号 : 028801 DOI:
10.1088/0256-307X/30/2/028801 出版年: FEB 2013
摘要: An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature (LT) GaN interlayer
between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by
metal organic chemical vapor deposition. The effects of the LT GaN interlayer on the performance
of the InGaN/GaN solar cells are investigated. It is found that the LT-GaN interlayer prevents the
extension of threading dislocations from the InGaN layer to the p-GaN layer and improves the
crystal quality of both the p-GaN cap layer and the InGaN i-layer, ultimately leading to an
increasing external quantum efficiency and photocurrent density of the InGaN/GaN solar cells.
语种: English
文献类型: Article
地址: [Li Liang; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Chen Ping; Wu Liang-Liang; Le
Ling-Cong; Yang Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing
100083, Peoples R China.
[Wang Hui; Yang Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123,
Peoples R China.
通讯作者地址: Zhao, DG (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: dgzhao@semi.ac.cn
ISSN: 0256-307X
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholars 60925017
National Natural Science Foundation of China 10990100
60836003
60976045
Tsinghua National Laboratory for Information Science and Technology(TNList) Cross-Discipline
Foundation
Supported by the National Science Fund for Distinguished Young Scholars (No 60925017), the
National Natural Science Foundation of China (Nos 10990100, 60836003 and 60976045), and
Tsinghua National Laboratory for Information Science and Technology(TNList) Cross-Discipline
Foundation.
-------------------------------------------------------------------------------第 142 条，共 234 条
标题: Two New Methods to Improve the Lithography Precision for SU-8 Photoresist on Glass
Substrate
作者: Mao, X (Mao, Xu); Yang, JL (Yang, Jinling); Ji, A (Ji, An); Yang, FH (Yang, Fuhua)
来源出版物: JOURNAL OF MICROELECTROMECHANICAL SYSTEMS 卷: 22 期: 1 页: 124-130
DOI: 10.1109/JMEMS.2012.2219295 出版年: FEB 2013
摘要: This paper introduces two novel approaches to effectively eliminate the influence of
scattering light from the wafer chuck and enhance the lithography precision of SU-8 photoresist
on glass substrate. The first method is based on the fact that Si wafer can partially reflect
ultraviolet (UV) light, and the second one employs materials that have low optical transparency
and can achieve complete absorption of the near-UV light penetrating through the SU-8
photoresist and the glass substrate. The SU-8 structures produced by these two methods have
much better profiles than those fabricated by the conventional process, and the linewidth
deviation is smaller than 1 mu m. The two routines have advantages of simplicity and low cost,
therefore are applicable to batch fabrication, and can significantly enhance the performance of
microelectromechanical systems devices. These two methods were adopted to perform
SU-8-based low-temperature bonding at wafer level and with high precision. The bonding shear
strengths reach 2-26 MPa when the bonding temperature varied from 60 degrees C to 140
degrees C.
语种: English
文献类型: Article
作者关键词: Complete absorption; glass substrate; lithography precision; partial reflection; SU-8
photoresist
KeyWords Plus: THICK PHOTORESIST; FABRICATION
地址: [Mao, Xu; Yang, Jinling; Ji, An] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R
China.
[Mao, Xu; Yang, Jinling; Ji, An; Yang, Fuhua] State Key Lab Transducer Technol, Shanghai 200050,
Peoples R China.
通讯作者地址: Mao, X (通讯作者),Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R
China.
电子邮件地址: maoxu@semi.ac.cn; jlyang@semi.ac.cn; jian@semi.ac.cn; fhyang@semi.ac.cn
ISSN: 1057-7157
基金资助致谢:
基金资助机构 授权号
Chinese 973 Program 2009CB320305
2011CB933102
National Natural Science Foundation of China 61234007
This work was supported in part by the Chinese 973 Program under Grants 2009CB320305 and
2011CB933102 and in part by the National Natural Science Foundation of China through Project
61234007. Subject Editor C. Liu.
-------------------------------------------------------------------------------第 143 条，共 234 条
标题: Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate
Structure
作者: Yu, GH (Yu, Guohao); Wang, Y (Wang, Yue); Cai, Y (Cai, Yong); Dong, ZH (Dong, Zhihua);
Zeng, CH (Zeng, Chunhong); Zhang, BS (Zhang, Baoshun)
来 源 出 版 物 : IEEE ELECTRON DEVICE LETTERS 卷 : 34 期 : 2 页 : 217-219 DOI:
10.1109/LED.2012.2235405 出版年: FEB 2013
摘要: Anovel double-gate AlGaN/GaN HEMT, in which an additional top-gate covers the adjacent
regions of a normal gate, was proposed and fabricated for the first time to compare the dynamic
characteristics of AlGaN/GaN HEMTs with a source field plate (SFP) and a gate field plate (GFP).
During the dynamic characterization, the device was configured in two operation modes: One is
the SFP mode with the top gate biased at 0 V, and the other is the GFP mode applying the gate
pulse signal on the top gate at the same time. Compared with an AlGaN/GaN HEMT without field
plates, both GFP and SFP much improve the dynamic performances. Compared with the SFP, the
GFP shows better dynamic performances with a similar to 34% reduction of switch-on delay time
and similar to 6% reduction of dynamic ON-state resistance. Studying the dynamic characteristics
and applying negative voltage on the top gate during the OFF state, the mechanism differences
between the GFP and the SFP are discussed in detail.
语种: English
文献类型: Article
作者关键词: AlGaN/GaN high-electron-mobility transistor (HEMT); dynamic performance; power
device
KeyWords Plus: EFFECT TRANSISTORS; CURRENT COLLAPSE; BOOST CONVERTER; ON-RESISTANCE;
POWER; SUBSTRATE; GANHEMT; VOLTAGE; HFETS
地址: [Yu, Guohao; Wang, Yue; Cai, Yong; Dong, Zhihua; Zeng, Chunhong; Zhang, Baoshun]
Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou
215123, Peoples R China.
[Yu, Guohao; Wang, Yue] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.
[Yu, Guohao] Chinese Acad Sci, Inst Semicond, Beijing 10008, Peoples R China.
通讯作者地址: Yu, GH (通讯作者),Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab
Nanodevices & Applicat, Suzhou 215123, Peoples R China.
电子邮件地址: ycai2008@sinano.ac.cn
ISSN: 0741-3106
基金资助致谢:
基金资助机构 授权号
State Key Program of the National Natural Science Foundation of China 10834004
National Basic Research Program of China (973 Program) G2009CB929300
Jiangsu Science and Technology Support Program BE2012079
This work was supported in part by the State Key Program of the National Natural Science
Foundation of China under Grant 10834004, by the National Basic Research Program of China
(973 Program) under Grant G2009CB929300, and by the Jiangsu Science and Technology Support
Program under Grant BE2012079. The review of this letter was arranged by Editor G.
Meneghesso.
-------------------------------------------------------------------------------第 144 条，共 234 条
标题: CMOS-Compatible Vertical Grating Coupler With Quasi Mach-Zehnder Characteristics
作者: Zhang, ZY (Zhang, Zanyun); Zhang, Z (Zhang, Zan); Huang, BJ (Huang, Beiju); Cheng, CT
(Cheng, Chuantong); Chen, HD (Chen, Hongda)
来源出版物: IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 3 页: 224-227 DOI:
10.1109/LPT.2012.2234099 出版年: FEB 1 2013
摘要: A vertical grating coupler on silicon-on-insulator substrates has been designed and
demonstrated. The light from a vertical fiber can be coupled in and split equally into two arms
with the fiber placed in the grating center. An optical combiner is used to collect the transmission
from the two arms. The measured peak coupling efficiency is 37%. Our device can also function
like a Mach-Zehnder interferometer. In a device with an arm difference of 30 mu m, the
normalized transmission spectra of 20-nm free spectral range and more than 12-dB extinction
ratio at 1567 nm are obtained.
语种: English
文献类型: Article
作者关键词: Gratings; interference; silicon-on-insulator (SOI) technology; waveguide couplers
KeyWords Plus: CHIP OPTICAL INTERCONNECTION; FIBER
地址: [Zhang, Zanyun; Zhang, Zan; Huang, Beiju; Cheng, Chuantong; Chen, Hongda] Chinese Acad
Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Zhang, ZY (通讯作者),Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst
Semicond, Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : zhangzanyun@semi.ac.cn; Zhangzan@semi.ac.cn; bjhuang@semi.ac.cn;
chengchuantong@semi.ac.cn; hdchen@semi.ac.cn
ISSN: 1041-1135
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CBA00608
2011CB933203
2010CB934104
National Natural Science Foundation of China 61036002
61178051
60978067
61178081
National High Technology Research and Development Program ("863" Program) of China
2012AA030608
Manuscript received September 20, 2012; revised November 25, 2012; accepted December 8,
2012. Date of publication December 13, 2012; date of current version January 15, 2013. This
work was supported in part by the National Basic Research Program of China under Grant
2011CBA00608, Grant 2011CB933203, and Grant 2010CB934104, in part by the National Natural
Science Foundation of China under Grant 61036002, Grant 61178051, Grant 60978067, and Grant
61178081, and in part by the National High Technology Research and Development Program
("863" Program) of China under Grant 2012AA030608.
-------------------------------------------------------------------------------第 145 条，共 234 条
标题: Various Correlations in a Two-Qubit Heisenberg XXZ Spin System Both in Thermal
Equilibrium and Under the Intrinsic Decoherence
作者: Cai, JT (Cai, Jiang-Tao); Abliz, A (Abliz, Ahmad); Li, SS (Li, Shu-Shen)
来源出版物: INTERNATIONAL JOURNAL OF THEORETICAL PHYSICS 卷: 52 期: 2 页: 576-588
DOI: 10.1007/s10773-012-1362-9 出版年: FEB 2013
摘要: In this paper we discuss various correlations measured by the concurrence (C), classical
correlation (CC), quantum discord (QD), and geometric measure of discord (GMD) in a two-qubit
Heisenberg XXZ spin system in the presence of external magnetic field and Dzyaloshinskii-Moriya
(DM) anisotropic antisymmetric interaction. Based on the analytically derived expressions for the
correlations for the cases of thermal equilibrium and the inclusion of intrinsic decoherence, we
discuss and compare the effects of various system parameters on the correlations in both cases.
We also found that there is not a definite ordering of these quantities in thermal equilibrium,
whereas there is a descending order of the CC, C, GMD and QD under the intrinsic decoherence
with a nonnull B when the initial state is vertical bar Psi(2) (0)> = 1/root 2(vertical bar 00 > +
vertical bar 11 >).
语种: English
文献类型: Article
作者关键词: Quantum correlation; Classical correlation; Intrinsic decoherence; Heisenberg XXZ
model
KeyWords Plus: QUANTUM COMPUTATION; WEAK FERROMAGNETISM
地址: [Cai, Jiang-Tao; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, Beijing 100083, Peoples R China.
[Abliz, Ahmad] Xinjiang Normal Univ, Sch Phys & Elect Engn, Urumqi 830054, Peoples R China.
通讯作者地址: Cai, JT (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: jtcai@semi.ac.cn
ISSN: 0020-7748
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China (973 Program) G2009CB929300
National Natural Science Foundation of China 60821061
This work was supported by the National Basic Research Program of China (973 Program) grant
No. G2009CB929300 and the National Natural Science Foundation of China under Grant No.
60821061. Ahmad Abliz also acknowledges the Key Subjects of Xinjiang Uygur Autonomous
Region.
-------------------------------------------------------------------------------第 146 条，共 234 条
标题: Anisotropic characteristics and morphological control of silicon nanowires fabricated by
metal-assisted chemical etching
作者: Liu, K (Liu, Kong); Qu, SC (Qu, Shengchun); Zhang, XH (Zhang, Xinhui); Wang, ZG (Wang,
Zhanguo)
来 源 出 版 物: JOURNAL OF MATERIALS SCIENCE 卷 : 48 期: 4 页 : 1755-1762 DOI:
10.1007/s10853-012-6936-7 出版年: FEB 2013
摘要: Low-cost fabrication methods enabling the morphological control of silicon nanowires are
of great importance in many device application fields. A top-down fabrication method,
metal-assisted chemical etching, is proved to be a feasible solution. In this paper, some novel
approaches based on metal-assisted chemical etching, alkaline solution etching, and
electrochemical anodic etching are presented for fabricating micro-and nano-structures, which
reveal the anisotropic characteristics of metal-assisted chemical etching in silicon. A new model is
proposed to explain the motility behavior of Ag particles in metal-assisted chemical etching of
silicon. It is shown that Ag particle forms a self-electrophoresis unit and migrates into Si substrate
along [100] direction independently. Diameter and length control of silicon nanowires are
achieved by varying Ag deposition and etching durations of metal-assisted chemical etching,
respectively, which provide a facilitation to achieve high-aspect-ratio silicon nanowires at room
temperature in a short period. These results show a potential simple method to microstructure
silicon for devices application, such as solar cells and sensors.
语种: English
文献类型: Article
KeyWords Plus: POROUS SILICON; SILVER NANOPARTICLES; ARRAYS; GROWTH; SI(100)
地址: [Liu, Kong; Qu, Shengchun; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab
Semicond Mat Sci, Beijing 100083, Peoples R China.
[Zhang, Xinhui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,
Beijing 100083, Peoples R China.
通讯作者地址: Qu, SC (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: liukong@semi.ac.cn; qsc@semi.ac.cn
ISSN: 0022-2461
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2012CB934200
National Natural Science Foundation of China 50990064
61076009
61204002
This work was mostly supported by the National Basic Research Program of China (Grant No.
2012CB934200), and National Natural Science Foundation of China (Contract Nos. 50990064,
61076009, 61204002).
-------------------------------------------------------------------------------第 147 条，共 234 条
标题: Long-range-ordered Ag nanodot arrays grown on GaAs substrate using nanoporous alumina
mask
作者: Liu, W (Liu, Wen); Wang, XD (Wang, Xiaodong); Xu, R (Xu, Rui); Wang, XF (Wang, Xiaofeng);
Cheng, KF (Cheng, Kaifang); Ma, HL (Ma, Huili); Yang, FH (Yang, Fuhua); Li, JM (Li, Jinmin)
来源出版物: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 卷: 16 期: 1 页:
160-164 DOI: 10.1016/j.mssp.2012.05.008 出版年: FEB 2013
摘要: With more and more attention given to the plasmonic nanostructures enhancing light
trapping of solar cells, the fabrication of metal nanostructures becomes more and more
important. In this work, we fabricated porous anodic alumina on SiO2/GaAs substrate and
obtained periodic Ag nanodots with hemispherical shape by electron beam evaporation. During
the experiments, it was found that the properties of barrier layers of porous anodic alumina
fabricated on SiO2/GaAs and SiO2/Si substrates after pore-widening are different. The
through-hole porous anodic alumina film on SiO2/GaAs substrate cannot be obtained after a long
pore-widening process. The additional Ar ion bombardment against the samples was needed in
our experiments to get the through-hole porous anodic alumina films on SiO2/GaAs substrate. (C)
2012 Elsevier Ltd. All rights reserved.
语种: English
文献类型: Article
作者关键词: Porous anodic alumina; GaAs; Ag nanodot arrays
KeyWords Plus: ANODIC ALUMINA
地址: [Liu, Wen; Wang, Xiaodong; Xu, Rui; Wang, Xiaofeng; Cheng, Kaifang; Ma, Huili; Yang,
Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing
100083, Peoples R China.
[Yang, Fuhua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing
100083, Peoples R China.
[Li, Jinmin] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R
China.
通讯作者地址: Wang, XD (通讯作者),Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond
Integrated Technol, Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : liuwen519@semi.ac.cn; xdwang@semi.ac.cn; xurui@semi.ac.cn;
wangxiaofeng@semi.ac.cn; chengkaifang@semi.ac.cn; mahuili@semi.ac.cn; fhyang@semi.ac.cn;
jmli@semi.ac.cn
ISSN: 1369-8001
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China (973 Program) 2010CB934104
2012CB934204
National Natural Science Foundation of China 61076077
This paper was supported by the National Basic Research Program of China (973 Program) under
the Grant nos. 2010CB934104 and 2012CB934204 and the National Natural Science Foundation
of China under the Grant no. 61076077.
-------------------------------------------------------------------------------第 148 条，共 234 条
标题: DESIGN OF NOVEL COMPOSITE BEAM SPLITTER WITH DIRECTIONAL COUPLERS AND RING
RESONATORS USING PHOTONIC CRYSTAL
作者: Liao, QH (Liao, Qinghua); Guo, H (Guo, Hao); Yu, TB (Yu, Tianbao); Huang, YZ (Huang,
Yongzhen)
来 源 出 版 物 : MODERN PHYSICS LETTERS B 卷 : 27 期 : 3 文 献 号 : 1350019 DOI:
10.1142/S021798491350019X 出版年: JAN 30 2013
摘要: We propose and analyze a novel multiway high efficiency composite beam splitter based
on propagation properties of the light waves in directional coupler (DC) and ring resonator. The
spectral transmittance and splitting properties of the beam splitter have been numerically
simulated and analyzed using the plane wave expansion (PWE) method and finite difference time
domain (FDTD) method. By simply adjusting the symmetrical coupling rods in the ring resonators,
inducing the redistribution of the power of the optical field, equipartition or free distribution of
the light field energy can be achieved. It was shown that the novel composite beam splitter has a
large separating angle, a high beam transmittance, and high flexibility. Furthermore, this beam
splitter can be easily extended to the structure with more light output channels. These features
of the proposed composite beam splitter make it a promising candidate in optical communication
applications.
语种: English
文献类型: Article
作者关键词: Photonic crystal; ring resonator; directional coupler; beam splitter
KeyWords Plus: WAVE-GUIDES; HIGH TRANSMISSION; SQUARE-LATTICE; BENDS; ULTRACOMPACT;
RODS
地址: [Liao, Qinghua; Guo, Hao; Yu, Tianbao] Nanchang Univ, Dept Phys, Nanchang 330031,
Peoples R China.
[Huang, Yongzhen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing
100083, Peoples R China.
通讯作者地址: Liao, QH (通讯作者),Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R
China.
电子邮件地址: lqhua@ncu.edu.cn
ISSN: 0217-9849
基金资助致谢:
基金资助机构 授权号
State Key Laboratory on Integrated Optoelectronics from Institute of Semiconductors, Chinese
Academy of Sciences
Natural Science Foundation of Jiangxi Province, China 2008GZW0006
Department of Education of Jiangxi Province, China 2007-59
GJJ08066
Project supported by the Open Project of the State Key Laboratory on Integrated Optoelectronics
from Institute of Semiconductors, Chinese Academy of Sciences, the Natural Science Foundation
of Jiangxi Province, China (Grant No. 2008GZW0006), and the Research Project from Department
of Education of Jiangxi Province, China (Grant Nos. 2007-59 and GJJ08066).
-------------------------------------------------------------------------------第 149 条，共 234 条
标 题 : High-Q modes in defected microcircular resonator confined by metal layer for
unidirectional emission
作者: Yao, QF (Yao, Qi-Feng); Huang, YZ (Huang, Yong-Zhen); Lin, JD (Lin, Jian-Dong); Lv, XM (Lv,
Xiao-Meng); Zou, LX (Zou, Ling-Xiu); Long, H (Long, Heng); Yang, YD (Yang, Yue-De); Xiao, JL (Xiao,
Jin-Long)
来源出版物: OPTICS EXPRESS 卷: 21 期: 2 页: 2165-2170 出版年: JAN 28 2013
摘要: Defected circular resonators laterally confined by a metal layer with a flat side as an
emitting window are numerically investigated based on the boundary element method for
realizing unidirectional emission microlasers. The results indicate that Fabry-Perot (FP) modes
become high Q confined modes in the defected circular resonator with a metallic layer. The mode
coupling between the FP mode and chaotic-like mode can result in high Q confined mode for
unidirectional emission with a narrow far field pattern. (C) 2013 Optical Society of America
语种: English
文献类型: Article
KeyWords Plus: BOUNDARY-ELEMENT METHOD; WAVE-GUIDE; DIRECTIONAL EMISSION;
MICRODISK LASERS; OUTPUT; MICROLASERS
地址: [Yao, Qi-Feng; Huang, Yong-Zhen; Lin, Jian-Dong; Lv, Xiao-Meng; Zou, Ling-Xiu; Long, Heng;
Yang, Yue-De; Xiao, Jin-Long] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,
Beijing 100083, Peoples R China.
通讯作者地址: Yao, QF (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: yzhuang@semi.ac.cn
ISSN: 1094-4087
基金资助致谢:
基金资助机构 授权号
National Nature Science Foundation of China 60838003
61006042
61106048
61061160502
Creative Research Group 61021003
High Technology Development Project 2012AA012202
This work was supported by the National Nature Science Foundation of China under Grants
60838003, 61006042, 61106048, and 61061160502, Science Fund for Creative Research Group
under Grant 61021003, and High Technology Development Project under Grant 2012AA012202.
-------------------------------------------------------------------------------第 150 条，共 234 条
标题: High-harmonic and single attosecond pulse generation using plasmonic field enhancement
in ordered arrays of gold nanoparticles with chirped laser pulses
作者: Yang, YY (Yang, Ying-Ying); Scrinzi, A (Scrinzi, Armin); Husakou, A (Husakou, Anton); Li, QG
(Li, Qian-Guang); Stebbings, SL (Stebbings, Sarah L.); Sussmann, F (Suessmann, Frederik); Yu, HJ
(Yu, Hai-Juan); Kim, S (Kim, Seungchul); Ruhl, E (Ruehl, Eckart); Herrmann, J (Herrmann, Joachim);
Lin, XC (Lin, Xue-Chun); Kling, MF (Kling, Matthias F.)
来源出版物: OPTICS EXPRESS 卷: 21 期: 2 页: 2195-2205 出版年: JAN 28 2013
摘要: Coherent XUV sources, which may operate at MHz repetition rate, could find applications
in high-precision spectroscopy and for spatio-time-resolved measurements of collective electron
dynamics on nanostructured surfaces. We theoretically investigate utilizing the enhanced
plasmonic fields in an ordered array of gold nanoparticles for the generation of high-harmonic,
extreme-ultraviolet (XUV) radiation. By optimization of the chirp of ultrashort laser pulses
incident on the array, our simulations indicate a potential route towards the temporal shaping of
the plasmonic near-field and, in turn, the generation of single attosecond pulses. The inherent
effects of inhomogeneity of the local fields on the high-harmonic generation are analyzed and
discussed. While taking the inhomogeneity into account does not affect the optimal chirp for the
generation of a single attosecond pulse, the cut-off energy of the high-harmonic spectrum is
enhanced by about a factor of two. (C) 2013 Optical Society of America
语种: English
文献类型: Article
KeyWords Plus: ATOMIC LINE EMISSION; IONIZATION; SPECTROSCOPY
地址: [Yang, Ying-Ying; Yu, Hai-Juan; Lin, Xue-Chun] Chinese Acad Sci, Inst Semicond, Lab Solid
State Laser Sources, Beijing 100083, Peoples R China.
[Scrinzi, Armin] Univ Munich, D-80333 Munich, Germany.
[Husakou, Anton; Herrmann, Joachim] Max Born Inst Nonlinear Opt & Short Pulse Spect, D-12489
Berlin, Germany.
[Li, Qian-Guang] Univ Xiaogan, Hubei Engn Univ, Dept Phys, Xiaogan 432000, Peoples R China.
[Stebbings, Sarah L.; Suessmann, Frederik; Kling, Matthias F.] Max Planck Inst Quantum Opt,
D-85748 Garching, Germany.
[Kim, Seungchul] POSTECH, Max Planck Ctr Attosecond Sci MPC AS, Pohang 790784, Kyungbuk,
South Korea.
[Ruehl, Eckart] Free Univ Berlin, Inst Chem & Biochem Phys & Theoret Chem, D-14195 Berlin,
Germany.
[Kling, Matthias F.] Kansas State Univ, Dept Phys, JR Macdonald Lab, Manhattan, KS 66506 USA.
通讯作者地址: Yang, YY (通讯作者),Chinese Acad Sci, Inst Semicond, Lab Solid State Laser
Sources, Beijing 100083, Peoples R China.
电子邮件地址: yangyy@semi.ac.cn; kling@phys.ksu.edu
ISSN: 1094-4087
基金资助致谢:
基金资助机构 授权号
Chemical Sciences, Geosciences, and Biosciences Division, Office of Basic Energy Sciences, Office
of Science, U. S. Department of Energy DESC0008146
DE-FG02-86ER13491
BMBF via PhoNa
DFG Kl-1439/4
Kl-1439/5
Cluster of Excellence: Munich Center for Advanced Photonics (MAP)
National Science Foundation EPS-0903806
DFG project HU 1593/2-1
King-Saud University
Financial support from the Chemical Sciences, Geosciences, and Biosciences Division, Office of
Basic Energy Sciences, Office of Science, U. S. Department of Energy under DESC0008146 and
DE-FG02-86ER13491; the BMBF via PhoNa; the DFG via Kl-1439/4 and Kl-1439/5; the Cluster of
Excellence: Munich Center for Advanced Photonics (MAP); the National Science Foundation
under EPS-0903806; and DFG project HU 1593/2-1 is acknowledged with thanks. We are
furthermore grateful for support by the King-Saud University in the framework of the MPQ-KSU
collaboration and the visiting professor program.
-------------------------------------------------------------------------------第 151 条，共 234 条
标题: Electronic structure and optical properties of InAs/GaSb/AlSb/GaSb superlattice
作者: Lang, XL (Lang, Xiao-Li); Xia, JB (Xia, Jian-Bai)
来源 出版物: JOURNAL OF APPLIED PHYSICS 卷 : 113 期 : 4 文 献号: 043715 DOI:
10.1063/1.4780704 出版年: JAN 28 2013
摘要: The electronic structure and optical properties of InAs/GaSb/AlSb/GaSb superlattice
(M-structure) are investigated in the framework of eight-band effective-mass theory, with the
interface potential considered. The calculated energy gaps agree excellently with the
experimental results. Via calculations, we find that the electronic structure of M-structure
strongly depends on the geometrical structure of superlattice. The electron effective mass
increases notably with the thickness of GaSb and AlSb layers, and AlSb layer is more favorable to
obtain large electron effective mass than GaSb layer. Increased thickness of AlSb layer also leads
to larger variation range of valence band maximum (VBM) and so M-structure has more tunable
VBM than InAs/GaSb superlattice. Also the VBM of M-structure rises considerably with the
increment of GaSb layer thickness and is almost independent of InAs layer thickness. We further
find that M-structure has no remarkable superior optical absorption coefficient over InAs/GaSb
superlattice. However, with larger electron effective mass and more tunable valence band
maximum compared with InAs/GaSb superlattice, M-structure can be used as barrier in
InAs/GaSb superlattice infrared detector to reduce the dark current. And the quantum efficiency
of infrared photodiodes will not depend on the bias voltage when the M-structure is
appropriately doped and carefully designed based on the dependence of its electronic structure
on
the
superlattice
geometry.
(C)
2013
American
Institute
of
Physics.
[http://dx.doi.org/10.1063/1.4780704]
语种: English
文献类型: Article
KeyWords Plus: ENVELOPE-FUNCTION APPROXIMATION; LATTICE
SEMICONDUCTORS; PARAMETERS; GAAS/ALAS; OFFSETS; MODEL
BAND-STRUCTURE;
地址: [Lang, Xiao-Li; Xia, Jian-Bai] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Lang, XL (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, Beijing 100083, Peoples R China.
电子邮件地址: langxiaoli@semi.ac.cn; xiajb@semi.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
special funds for National Basic Research Program 2011CB922201
This work was supported by the special funds for National Basic Research Program No.
2011CB922201.
-------------------------------------------------------------------------------第 152 条，共 234 条
标题: Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic
layer deposition on 4H-SiC
作者: Zhang, F (Zhang, Feng); Sun, GS (Sun, Guosheng); Zheng, L (Zheng, Liu); Liu, SB (Liu,
Shengbei); Liu, B (Liu, Bin); Dong, L (Dong, Lin); Wang, L (Wang, Lei); Zhao, WS (Zhao, Wanshun);
Liu, XF (Liu, Xingfang); Yan, GG (Yan, Guoguo); Tian, LX (Tian, Lixin); Zeng, YP (Zeng, Yiping)
来源出 版物: JOURNAL OF APPLIED PHYSICS 卷 : 113 期: 4 文献号 : 044112 DOI:
10.1063/1.4789380 出版年: JAN 28 2013
摘要: Al2O3 films were prepared by atomic layer deposition using trimethylaluminum and H2O at
250 degrees C on 4H-SiC substrates and annealed at 1000 degrees C in N-2. The as-deposited and
annealed Al2O3 films were measured and analyzed near the Al2O3/SiC interfaces by using an
X-ray photoelectron spectroscopy (XPS) with etching processing. The XPS results showed that
as-deposited Al2O3 films were O-rich and converted to anhydride Al2O3 films after annealed at
1000 degrees C in N-2. Si suboxides were found both at as-deposited and annealed Al2O3/SiC
interfaces. Energy band shift between Al2O3 and 4H-SiC was found after annealing. The
conduction band offsets of as-grown and annealed Al2O3/SiC were 1.90 and 1.53 eV, respectively.
These results demonstrated that Al2O3 can be a good candidate to be applied in SiC
metal-oxide-semiconductor
devices.
(C)
2013
American
Institute
of
Physics.
[http://dx.doi.org/10.1063/1.4789380]
语种: English
文献类型: Article
KeyWords Plus: DEVICES
地址: [Zhang, Feng; Sun, Guosheng; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Key Lab
Semicond Mat Sci, Beijing 100083, Peoples R China.
[Zhang, Feng; Sun, Guosheng; Zheng, Liu; Liu, Shengbei; Liu, Bin; Dong, Lin; Wang, Lei; Zhao,
Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping] Chinese Acad Sci, Inst Semicond,
Ctr Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: Zhang, F (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: fzhang@semi.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China (NSFC) 51102225
Beijing Natural Science Foundation 4132076
Youth Innovation Promotion Association, Chinese Academy of Sciences
The authors acknowledge the support from the National Natural Science Foundation of China
(NSFC) under Grant No. 51102225, Beijing Natural Science Foundation under Grant No. 4132076,
and Youth Innovation Promotion Association, Chinese Academy of Sciences.
-------------------------------------------------------------------------------第 153 条，共 234 条
标题: Quantum spin Hall effect induced by electric field in silicene
作者: An, XT (An, Xing-Tao); Zhang, YY (Zhang, Yan-Yang); Liu, JJ (Liu, Jian-Jun); Li, SS (Li,
Shu-Shen)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 4 文 献 号 : 043113 DOI:
10.1063/1.4790147 出版年: JAN 28 2013
摘要: We investigate the transport properties in a zigzag silicene nanoribbon in the presence of
an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit
couplings can be induced by the external electric field due to the buckled structure of the silicene.
A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by
tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge
states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that
the quantum spin Hall effect can be induced by an external electric field in silicene, which may
have certain practical significance in applications for future spintronics device. (C) 2013 American
Institute of Physics. [http://dx.doi.org/10.1063/1.4790147]
语种: English
文献类型: Article
KeyWords Plus: TOPOLOGICAL PHASE-TRANSITION; WELLS
地址: [An, Xing-Tao] Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei, Peoples R
China.
[An, Xing-Tao; Zhang, Yan-Yang; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing
100083, Peoples R China.
[Zhang, Yan-Yang] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.
[Liu, Jian-Jun] Shijiazhuang Univ, Dept Phys, Shijiazhuang 050035, Peoples R China.
通讯作者地址: An, XT (通讯作者),Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei,
Peoples R China.
电子邮件地址: yanyang@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 11104059
61176089
11204294
Hebei province Natural Science Foundation of China A2011208010
Postdoctoral Science Foundation of China 2012M510523
This work was supported by National Natural Science Foundation of China (Grant Nos. 11104059,
61176089, and 11204294), Hebei province Natural Science Foundation of China (Grant No.
A2011208010), and Postdoctoral Science Foundation of China (Grant No. 2012M510523).
-------------------------------------------------------------------------------第 154 条，共 234 条
标题: Generation of Pure Bulk Valley Current in Graphene
作者: Jiang, YJ (Jiang, Yongjin); Low, T (Low, Tony); Chang, K (Chang, Kai); Katsnelson, MI
(Katsnelson, Mikhail I.); Guinea, F (Guinea, Francisco)
来 源 出 版 物 : PHYSICAL REVIEW LETTERS 卷 : 110 期 : 4 文 献 号 : 046601 DOI:
10.1103/PhysRevLett.110.046601 出版年: JAN 23 2013
摘要: The generation of valley current is a fundamental goal in graphene valleytronics but no
practical ways of its realization are known yet. We propose a workable scheme for the generation
of bulk valley current in a graphene mechanical resonator through adiabatic cyclic deformations
of the strains and a chemical potential in the suspended region. The accompanied strain gauge
fields can break the spatial mirror symmetry of the problem within each of the two inequivalent
valleys, leading to a finite valley current due to quantum pumping. An all-electrical measurement
configuration is designed to detect the novel state with pure bulk valley currents. DOI:
10.1103/PhysRevLett.110.046601
语种: English
文献类型: Article
KeyWords Plus: MECHANICAL RESONATORS; POLARIZATION; TRANSPORT; SHEETS; MOS2
地址: [Jiang, Yongjin] Zhejiang Normal Univ, Ctr Stat & Theoret Condensed Matter Phys, Jinhua
321004, Peoples R China.
[Jiang, Yongjin] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China.
[Jiang, Yongjin; Chang, Kai] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.
[Low, Tony] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA.
[Chang, Kai] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.
[Katsnelson, Mikhail I.] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen,
Netherlands.
[Guinea, Francisco] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain.
通讯作者地址: Jiang, YJ (通讯作者),Zhejiang Normal Univ, Ctr Stat & Theoret Condensed Matter
Phys, Jinhua 321004, Peoples R China.
电子邮件地址: jyj@zjnu.cn; kchang@semi.ac.cn
ISSN: 0031-9007
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 11004174
10934007
Program for Innovative Research Team in Zhejiang Normal University
National Basic Research Program of China (973 Program) 2011CB922204
NRI-INDEX
FOM, Netherlands
Spanish MICINN FIS2008-00124
FIS2011-23713
CONSOLIDER CSD2007-00010
ERC 290846
Y. J. and K. C. acknowledge the support from the National Natural Science Foundation of China
[under Grants No. 11004174 (Y. J.) and No. 10934007 (K. C.)]. Y. J. is also supported by the
Program for Innovative Research Team in Zhejiang Normal University. K. C. is also supported by
the National Basic Research Program of China (973 Program) under Grant No. 2011CB922204. T. L.
also acknowledges partial support from NRI-INDEX. M. I. K. acknowledges financial support from
FOM, Netherlands. F. G. acknowledges financial support from Spanish MICINN (Grants No.
FIS2008-00124, No. FIS2011-23713, and No. CONSOLIDER CSD2007-00010), and ERC, Grant No.
290846.
-------------------------------------------------------------------------------第 155 条，共 234 条
标题: Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well
作者: Jin, DD (Jin, Dong-Dong); Jiang, C (Jiang, Chao); Li, GD (Li, Guo-Dong); Zhang, LW (Zhang,
Liu-Wan); Yang, T (Yang, Tao); Liu, XL (Liu, Xiang-Lin); Yang, SY (Yang, Shao-Yan); Zhu, QS (Zhu,
Qin-Sheng); Wang, ZG (Wang, Zhan-Guo)
来 源出版 物: JOURNAL OF APPLIED PHYSICS 卷: 113 期 : 3 文献 号: 033701 DOI:
10.1063/1.4775790 出版年: JAN 21 2013
摘要: We suggest a new theoretical model to study the anisotropic scattering effect of the
elongated quantum dots embedded in the GaAs/InGaAs double hetero-junction quantum well on
the two-dimensional electron gas (2DEG). The elongated quantum dot (QD) with geometry which
differs from ball-shaped quantum dot having isotropic cross section is assumed to be ellipsoid in
the present calculation. The results show that the scattering in the direction parallel to the
ellipsoid orientation (having small cross section) is weaker than that in the direction
perpendicular to the ellipsoid orientation (having larger cross section) for the elongated QD when
the mobile 2DEG is confined within the channel plane. (C) 2013 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4775790]
语种: English
文献类型: Article
KeyWords Plus: 2-DIMENSIONAL ELECTRON-GAS; SHAPE TRANSITION; ROUGHNESS SCATTERING;
TRANSPORT; MOBILITY; ISLANDS; LASER
地址: [Jin, Dong-Dong; Yang, Tao; Liu, Xiang-Lin; Yang, Shao-Yan; Zhu, Qin-Sheng; Wang,
Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R
China.
[Jin, Dong-Dong; Zhang, Liu-Wan] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.
[Jiang, Chao; Li, Guo-Dong] Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China.
通讯作者地址: Jin, DD (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
POB 912, Beijing 100083, Peoples R China.
电子邮件地址: ddjin2009@semi.ac.cn; qszhu@semi.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
National Science Foundation of China 91233111
11275228
61006004
61076001
60976008
10979507
Special Funds for Major State Basic Research Project (973 program) of China A000091109-05
863 High Technology R&D Program of China 2011AA03A101
This work was supported by National Science Foundation of China (Nos. 91233111, 11275228,
61006004, 61076001, 60976008, and 10979507), Special Funds for Major State Basic Research
Project (973 program) of China (No. A000091109-05), and the 863 High Technology R&D Program
of China (No. 2011AA03A101).
-------------------------------------------------------------------------------第 156 条，共 234 条
标题: Conformal coating of parylene for surface anti-adhesion in polydimethylsiloxane (PDMS)
double casting technique
作者: Chen, YF (Chen, Yuanfang); Pei, WH (Pei, Weihua); Tang, RY (Tang, Rongyu); Chen, SY (Chen,
Sanyuan); Chen, HD (Chen, Hongda)
来 源 出 版 物 : SENSORS AND ACTUATORS A-PHYSICAL 卷 : 189 页 : 143-150 DOI:
10.1016/j.sna.2012.09.024 出版年: JAN 15 2013
摘要: As a simple method to fabricate a high quality copy of master, PDMS double casting
technique has been more and more popular in microfluidics chips and bioMEMS application. In
this work, the method in which conformal coating of parylene C serves as a demolding
anti-adhesion layer in PDMS double casting technique was proposed. First casting was carried out
onto master mold to generate negative PDMS mold and second casting was done onto negative
PDMS mold likewise to generate positive PDMS replica with the same structure as master mold.
Microstructures with aspect ratio from 4:1 to 20:1 and sharp angle from 5 degrees to 40 degrees
were successfully obtained by using this new method. Experiments show replicas remain high
fidelity to their masters. This new method of surface anti-adhesive treatment is environment
friendly. Moreover, a single coating of parylene C can make the treated mold keep its
anti-adhesive property for long lifecycle regardless of the number of replica molding cycles. (C)
2012 Elsevier B.V. All rights reserved.
语种: English
文献类型: Article
作 者 关 键 词 : Polydimethylsiloxane (PDMS); Parylene; Double casting; Replica molding;
High-aspect-ratio
KeyWords Plus: SOFT LITHOGRAPHY; MICROFLUIDIC SYSTEMS; MICROCHANNEL NETS;
POLY(DIMETHYLSILOXANE); MICROFABRICATION; FABRICATION; POLYMER; MICRO; CELL
地址: [Chen, Yuanfang; Pei, Weihua; Tang, Rongyu; Chen, Sanyuan; Chen, Hongda] Chinese Acad
Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Pei, WH (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: peiwh@semi.ac.cn
ISSN: 0924-4247
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CB933203
2011CB933102
National 863 plans projects 2012AA030608
National Natural Science Foundation of China 31070965
61178082
61036002
60976026
61076023
61178051
This work was supported by the National Basic Research Program of China (2011CB933203,
2011CB933102), National 863 plans projects (2012AA030608), and National Natural Science
Foundation of China (31070965, 61178082, 61036002, 60976026, 61076023, and 61178051).
-------------------------------------------------------------------------------第 157 条，共 234 条
标题: A hybrid silicon single mode laser with a slotted feedback structure
作者: Zhang, YJ (Zhang, Yejin); Qu, HW (Qu, Hongwei); Wang, HL (Wang, Hailing); Zhang, SGL
(Zhang, Siriguleng); Liu, L (Liu, Lei); Ma, SD (Ma, Shaodong); Zheng, WH (Zheng, Wanhua)
来源出版物: OPTICS EXPRESS 卷: 21 期: 1 页: 877-883 出版年: JAN 14 2013
摘要: In this paper, a III-V/Silicon hybrid single mode laser operating at a long wavelength for
photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned
silicon-on insulator wafer directly. The novel mode selected mechanism based on a slotted silicon
waveguide is applied, which only need standard photolithography in the whole technological
process. The side mode suppression ratio of larger than 20dB is obtained from experiments. (C)
2013 Optical Society of America
语种: English
文献类型: Article
KeyWords Plus: OPTICAL GAIN; NANOCRYSTALS
地址: [Zhang, Yejin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing
100083, Peoples R China.
通讯作者地址: Zhang, YJ (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: yjzhang@semi.ac.cn; whzheng@semi.ac.cn
ISSN: 1094-4087
基金资助致谢:
基金资助机构 授权号
Chinese National Key Basic Research Special Fund 2012CB933501
2011CB922002
NSFC 61274070
61021003
61234004
61025025
61137003
60838003
National High Technology Research and Development Program of China 2012AA012202
This work is supported by the Chinese National Key Basic Research Special Fund (Grant No.
2012CB933501 and 2011CB922002), the NSFC (Grant Nos. 61274070, 61021003, 61234004,
61025025, 61137003 and 60838003) and the National High Technology Research and
Development Program of China (Grants No. 2012AA012202).
-------------------------------------------------------------------------------第 158 条，共 234 条
标题: Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate
作者: Li, TF (Li, Tianfeng); Gao, LZ (Gao, Lizhen); Lei, W (Lei, Wen); Guo, LJ (Guo, Lijun); Yang, T
(Yang, Tao); Chen, YH (Chen, Yonghai); Wang, ZG (Wang, Zhanguo)
来 源 出 版 物 : NANOSCALE RESEARCH LETTERS
卷 : 8
文 献 号 : 27
DOI:
10.1186/1556-276X-8-27 出版年: JAN 14 2013
摘要: We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs
were grown by metalorganic chemical vapor deposition on Si (111) substrates without external
catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different
polarization excitation of the incident laser beam relative to the NW axis. The transverse optical
(TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations
are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole
antenna, which can be attributed to the one-dimensional NW geometry and Raman selection
rules.
语种: English
文献类型: Article
作者关键词: Nanowires (NWs); Raman spectroscopy; Phonon property; Polarize
KeyWords Plus: INDIUM-PHOSPHIDE NANOWIRES; SEMICONDUCTING NANOWIRES; TWINNING
SUPERLATTICES; SCATTERING; PHOTODETECTION; DEVICES
地址: [Li, Tianfeng; Gao, Lizhen; Guo, Lijun] Henan Univ, Dept Phys, Sch Phys & Elect, Kaifeng
475004, Peoples R China.
[Li, Tianfeng; Yang, Tao; Chen, Yonghai; Wang, Zhanguo] Chinese Acad Sci, Key Lab Semicond Mat
Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Lei, Wen] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia.
通讯作者地址: Guo, LJ (通讯作者),Henan Univ, Dept Phys, Sch Phys & Elect, Kaifeng 475004,
Peoples R China.
电子邮件地址: juneguo@henu.edu.cn
ISSN: 1931-7573
基金资助致谢:
基金资助机构 授权号
973 Program 2012CB932701
National Natural Science Foundation of China 60990313
60990315
21173068
The authors would like to acknowledge Shuai Luo and Xiaoye Wang for their help with the
MOCVD work. The work was supported by the 973 Program (no. 2012CB932701) and the
National Natural Science Foundation of China (nos. 60990313, 60990315, and 21173068).
-------------------------------------------------------------------------------第 159 条，共 234 条
标题: Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate
surface
作者: Jia, CH (Jia, Caihong); Chen, YH (Chen, Yonghai); Liu, XL (Liu, Xianglin); Yang, SY (Yang,
Shaoyan); Zhang, WF (Zhang, Weifeng); Wang, ZG (Wang, Zhanguo)
来 源 出 版 物 : NANOSCALE RESEARCH LETTERS
卷 : 8
文 献 号 : 23
DOI:
10.1186/1556-276X-8-23 出版年: JAN 10 2013
摘要: Wurtzite ZnO thin films with different epitaxial relationships are obtained on as-received
and etched (001), (011), and (111) SrTiO3 (STO) by metal-organic chemical vapor deposition
(MOCVD). ZnO films exhibit nonpolar (1120) orientation with in-plane orientation relationship of
< 0001 >(ZnO)//< 110 >(STO) on as-received (001) STO, and polar c-axis growth with <
1100 >(ZnO)//< 110 >(STO) on etched (001) STO substrates. ZnO films change from polar (0001)
to semipolar (1012) oriented on as-received and etched (011) STO. On as-received and etched
(111) STO, ZnO films show the same growing direction of polar (0001), but different in-plane
orientations with 30A degrees rotation. The change of epitaxial relationship of ZnO films on
as-received and etched (001), (011), and (111) STO substrates is accompanied with the increase
of lattice mismatch, decrease of bond density, and increase of substrate surface roughness. In
other words, the epitaxial relationships of ZnO/STO heterointerfaces can be controlled by etching
the substrates. These results show that polar, nonpolar, and semipolar ZnO films for different
applications can be grown epitaxially on STO substrates by MOCVD.
语种: English
文献类型: Article
作者关键词: ZnO; SrTiO3; Epitaxial
KeyWords Plus: THIN-FILMS; INITIAL-STAGE; ZNO FILMS; GROWTH; NUCLEATION; MOCVD
地址: [Jia, Caihong; Chen, Yonghai; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo] Chinese Acad
Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Jia, Caihong; Zhang, Weifeng] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004,
Peoples R China.
[Jia, Caihong; Zhang, Weifeng] Henan Univ, Sch Phys & Elect, Kaifeng 475004, Peoples R China.
通讯作者地址: Chen, YH (通讯作者),Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond,
POB 912, Beijing 100083, Peoples R China.
电子邮件地址: yhchen@red.semi.ac.cn
ISSN: 1931-7573
基金资助致谢:
基金资助机构 授权号
973 program 2012CB921304
2012CB619306
National Natural Science Foundation of China 60990313
51202057
This work was supported by the 973 program (2012CB921304, 2012CB619306) and the National
Natural Science Foundation of China (60990313, 51202057).
-------------------------------------------------------------------------------第 160 条，共 234 条
标题: Au-Decorated Silicene: Design of a High-Activity Catalyst toward CO Oxidation
作者: Li, C (Li, Chong); Yang, SX (Yang, Shengxue); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Li, JB
(Li, Jingbo)
来源出版物: JOURNAL OF PHYSICAL CHEMISTRY C 卷: 117 期: 1 页: 483-488 DOI:
10.1021/jp310746m 出版年: JAN 10 2013
摘 要 : First-principles calculations have been performed to study Au-decorated silicene
(Au/silicene) as a high-activity catalyst for CO oxidation. The high binding strength of the
Au/silicene system and the high diffusion-energy barrier of Au adsorbates, as well as the assisted
Coulomb repulsion effect, jointly prevent the formation of Au clusters. Au/silicene transfers many
more electrons to O-2 than to CO, thus facilitating CO oxidation first by the
Langmuir-Hinshelwood (LH) mechanism (CO + O-2 -> OOCO -> CO2 + O) and then by Eley-Rideal
(ER) mechanism (CO + O -> CO2). The two reaction processes have quite low catalytic energy
barriers of 0.34 and 0.32 eV, respectively. The underlying mechanism of high catalytic oxidation of
CO can be attributed to electronic-state hybridization among Au d orbitals and CO and O-2 2 pi*
antibonding states around the Fermi energy. These findings enrich the applications of Si-based
materials to the high-activity catalytic field.
语种: English
文献类型: Article
KeyWords Plus: DENSITY-FUNCTIONAL THEORY; TRANSITION-METAL SURFACES; GOLD CLUSTERS;
ADSORPTION; REACTIVITY; PT(111); OXYGEN; REACTANTS; PD(111); SUPPORT
地址: [Li, Chong; Yang, Shengxue; Li, Shu-Shen; Xia, Jian-Bai; Li, Jingbo] Chinese Acad Sci, Inst
Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Yang, SX (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: shengxueyang@semi.ac.cn; jbli@semi.ac.cn
ISSN: 1932-7447
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholar 60925016
National Basic Research Program of China 2011CB921901
J.L. gratefully acknowledges financial support from the National Science Fund for Distinguished
Young Scholar (Grant 60925016) and the National Basic Research Program of China (Grant
2011CB921901). The authors acknowledge the computing resources provided by the
Supercomputing Center, CNIC, CAS.
-------------------------------------------------------------------------------第 161 条，共 234 条
标题: Band offsets and heterostructures of two-dimensional semiconductors
作者: Kang, J (Kang, Jun); Tongay, S (Tongay, Sefaattin); Zhou, J (Zhou, Jian); Li, JB (Li, Jingbo); Wu,
JQ (Wu, Junqiao)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 1 文 献 号 : 012111 DOI:
10.1063/1.4774090 出版年: JAN 7 2013
摘要: The band offsets and heterostructures of monolayer and few-layer transition-metal
dichalcogenides MX2 (M = Mo, W; X = S, Se, Te) are investigated from first principles calculations.
The band alignments between different MX2 monolayers are calculated using the vacuum level as
reference, and a simple model is proposed to explain the observed chemical trends. Some of the
monolayers and their heterostructures show band alignments suitable for potential applications
in spontaneous water splitting, photovoltaics, and optoelectronics. The strong dependence of the
band offset on the number of layers also implicates a possible way of patterning quantum
structures with thickness engineering. (C) 2013 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4774090]
语种: English
文献类型: Article
KeyWords Plus: SINGLE-LAYER MOS2
地址: [Kang, Jun; Li, Jingbo] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Tongay, Sefaattin; Zhou, Jian; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA
94720 USA.
[Wu, Junqiao] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720
USA.
通讯作者地址: Li, JB (通讯作者),Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083,
Peoples R China.
电子邮件地址: jbli@semi.ac.cn; wuj@berkeley.edu
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
Natural Science Foundation for Distinguished Young Scholar 60925016
National Basic Research Program of China 2011CB921901
External Cooperation Program of Chinese Academy of Sciences
J. Li gratefully acknowledges financial support from the Natural Science Foundation for
Distinguished Young Scholar (Grant No. 60925016). This work was supported by the National
Basic Research Program of China (Grant No. 2011CB921901) and the External Cooperation
Program of Chinese Academy of Sciences. We acknowledge the computing resources provided by
the Supercomputing Center, CNIC, CAS.
-------------------------------------------------------------------------------第 162 条，共 234 条
标题: Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN
hole injection layer
作者: Li, HJ (Li, Hongjian); Kang, JJ (Kang, Junjie); Li, PP (Li, Panpan); Ma, J (Ma, Jun); Wang, H
(Wang, Hui); Liang, M (Liang, Meng); Li, ZC (Li, Zhicong); Li, J (Li, Jing); Yi, XY (Yi, Xiaoyan); Wang,
GH (Wang, Guohong)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 1 文 献 号 : 011105 DOI:
10.1063/1.4773558 出版年: JAN 7 2013
摘要: A hole injection layer (HIL) is designed in GaN-based light emitting diodes (LEDs) between
multiple quantum wells and p-AlGaN electron blocking layer (EBL). Based on numerical
simulation by APSYS, the band diagram is adjusted by HIL, leading to the improved hole-injection
efficiency. The designed HIL is a p-GaN buffer layer grown at low temperature (LT_pGaN) on last
quantum barrier before p-AlGaN EBL. The output power of the fabricated GaN-based LED device
with LT_pGaN HIL is enhanced by 128% at 100 A/cm(2), while the efficiency droop is reduced by
33% compared to the conventional LED. (C) 2013 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4773558]
语种: English
文献类型: Article
KeyWords Plus: HYDROGEN
地址: [Li, Hongjian; Kang, Junjie; Li, Panpan; Ma, Jun; Liang, Meng; Li, Zhicong; Li, Jing; Yi, Xiaoyan;
Wang, Guohong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Wang, Hui] YangZhou ZhongKe Semicond Lighting Co Ltd, Yangzhou 225009, Jiangsu, Peoples R
China.
通讯作者地址: Li, HJ (通讯作者),Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R
China.
电子邮件地址: lihongjian@yzzkled.com
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National High Technology Program of China 2011AA03A105
2011AA03A103
This work was supported by the National High Technology Program of China (2011AA03A105 and
2011AA03A103).
-------------------------------------------------------------------------------第 163 条，共 234 条
标题: Electron spin dynamics study of bulk p-GaAs: The screening effect
作者: Zhao, CB (Zhao, Chunbo); Yan, TF (Yan, Tengfei); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu,
Zhichuan); Zhang, XH (Zhang, Xinhui)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 102 期 : 1 文 献 号 : 012406 DOI:
10.1063/1.4775683 出版年: JAN 7 2013
摘要: In this work, the electron spin dynamics of bulk p-GaAs doped with Be grown by molecular
beam epitaxy is investigated by using the time-resolved magneto-optical Kerr rotation technique.
The spin relaxation/dephasing times T-1 and T-2* are systematically investigated as a function of
hole doping density and photo-excitation density as well as temperature. The complex hole
doping density dependence of spin relaxation times T-1 and T-2* is observed experimentally,
which agrees well with predictions of the kinetic spin Bloch equation theory published previously
[J. Jiang and M. Wu, Phys. Rev. B 79, 125206 (2009)]. D'yakonov-Perel's mechanism [M. Dyakonov
and V. Perel, Sov. Phys. Solid State 13, 3023 (1972)] is discussed to dominate the electron spin
relaxation process in p-GaAs, with the effect of hole screening proven to play an important role.
(C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775683]
语种: English
文献类型: Article
地址: [Zhao, Chunbo; Yan, Tengfei; Ni, Haiqiao; Niu, Zhichuan; Zhang, Xinhui] Chinese Acad Sci,
Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Zhao, CB (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: xinhuiz@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CB922200
National Natural Science Foundation of China 10974195
11274302
This work was supported by the National Basic Research Program of China (No. 2011CB922200)
and the National Natural Science Foundation of China (Nos. 10974195, 11274302).
-------------------------------------------------------------------------------第 164 条，共 234 条
标题: First-principles study of atomic hydrogen adsorption and initial hydrogenation of Zr(0001)
surface
作者: Zhang, P (Zhang, Peng); Wang, SX (Wang, Shuangxi); Zhao, J (Zhao, Jian); He, CH (He,
Chaohui); Zhao, YL (Zhao, Yaolin); Zhang, P (Zhang, Ping)
来 源出版 物: JOURNAL OF APPLIED PHYSICS 卷: 113 期 : 1 文献 号: 013706 DOI:
10.1063/1.4772675 出版年: JAN 7 2013
摘要: The atomic hydrogen adsorption on Zr(0001) surface is systematically investigated by using
density functional theory within the generalized gradient approximation and a supercell
approach. The coverage dependence of the adsorption structures and energetics is studied in
detail for a wide range from 0.11 to 2.0 monolayer. At low coverage of 0 < Theta <= 1.0, the most
stable adsorption site is identified as the on-surface hcp site followed by the fcc site, and the
adsorption energy gradually increases with the coverage, thus, indicating the higher stability of
on-surface adsorption and the tendency to form H clusters. The origin of this stability is carefully
analyzed by the projected density of states and the charge distribution showing the Zr-H chemical
bonding with a mixed ionic/covalent feature during the surface hydrogenation. In addition, the
minimum energy paths as well as the activation barriers of the on-surface diffusion and the
penetration from on-surface sites to subsurface sites are also calculated. At high coverage of 1.0 <
Theta <= 2.0, it is found that the co-adsorption configuration with 1.0 monolayer H residing on
the surface hcp sites and the remaining (Theta - 1) monolayer H occupying the sub-surface
octahedral sites is most energetically favorable. The electronic structure properties of the
resultant H-Zr-H sandwich structures at the coverage range of 1.0 < Theta <= 2.0 reveal the
similar characteristics to the bulk hydride ZrH2, providing a detailed microscopic understanding
for the Zr surface hydrogenation phenomenon. (C) 2013 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4772675]
语种: English
文献类型: Article
KeyWords Plus: POLYCRYSTALLINE ZIRCONIUM; AB-INITIO; ZR; OXYGEN; POINTS; STATE
地址: [Zhang, Peng; He, Chaohui; Zhao, Yaolin] Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian
710049, Peoples R China.
[Wang, Shuangxi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,
Beijing 100083, Peoples R China.
[Zhao, Jian] China Univ Min & Technol, State Key Lab Geomech & Deep Underground Engn,
Beijing 100083, Peoples R China.
[Zhang, Ping] Inst Appl Phys & Computat Math, LCP, Beijing 100088, Peoples R China.
通讯作者地址: Zhang, P (通讯作者),Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian 710049,
Peoples R China.
电子邮件地址: pengzhang@xjtu.edu.cn; zhang_ping@iapcm.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
NSFC 51071032
11275147
This work was financially supported by NSFC under Grant Nos. 51071032 and 11275147. The
computation work is partly supported by the cluster Hua-I in Xi'an Jiaotong University and the
National Supercomputing Centre in Shenzhen. We are grateful for the fruitful discussions with Mr.
J. M. Kebwaro.
-------------------------------------------------------------------------------第 165 条，共 234 条
标题: Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting
diodes
作者: Zhang, YY (Zhang, Yiyun); Zheng, HY (Zheng, Haiyang); Guo, EQ (Guo, Enqing); Cheng, Y
(Cheng, Yan); Ma, J (Ma, Jun); Wang, LC (Wang, Liancheng); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi,
Xiaoyan); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)
来源 出版物: JOURNAL OF APPLIED PHYSICS 卷 : 113 期 : 1 文献号: 014502 DOI:
10.1063/1.4772669 出版年: JAN 7 2013
摘要: Light extraction efficiency (LEE) droop as an important factor contributing to the efficiency
droop of InGaN-based light-emitting diodes (LEDs) has been demonstrated and investigated in
detail. The LEE droop effect is induced by the spatial dependence of the extraction efficiency of
photons inside of the LED devices and the aggravating crowding effect of the injection electrons
around n-type electrodes as injection current increases. A current blocking layer is introduced to
alleviate the LEE droop effect. And the light output power of the LEDs is also improved by 43% at
an injection current of 350 mA. (C) 2013 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4772669]
语种: English
文献类型: Article
KeyWords Plus: IMPROVEMENT
地址: [Zhang, Yiyun; Guo, Enqing; Cheng, Yan; Ma, Jun; Wang, Liancheng; Liu, Zhiqiang; Yi,
Xiaoyan; Wang, Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol
Res & Dev Ctr, Beijing 100083, Peoples R China.
[Zhang, Yiyun] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China.
[Zheng, Haiyang] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol,
Beijing 100083, Peoples R China.
通讯作者地址: Yi, XY (通讯作者),Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res
& Dev Ctr, Beijing 100083, Peoples R China.
电子邮件地址: spring@semi.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
National High Technology Program of China 2011AA03A105
This work was supported by the National High Technology Program of China under Grant No.
2011AA03A105.
-------------------------------------------------------------------------------第 166 条，共 234 条
标题: First-principles study on strontium titanate for visible light photocatalysis
作者: Liu, HF (Liu, Hongfei); Dong, HF (Dong, Huafeng); Meng, XQ (Meng, Xiuqing); Wu, FM (Wu,
Fengmin)
来 源 出 版 物 : CHEMICAL PHYSICS LETTERS
卷 : 555
页 : 141-144
DOI:
10.1016/j.cplett.2012.11.005 出版年: JAN 3 2013
摘要: Density functional calculations have been performed on the electronic structure of
donor-acceptor (V-N, Nb-N, Cr-C and Mo-C) co-doped SrTiO3 to improve their photocatalytic
activity in visible light region. By analyzing the electronic structure of pure and co-doped SrTiO3,
we propose that the Mo-C co-doped system is promising materials for the visible light
photocatalyst. It is found that the doping of Mo-C complex may shift the valence band edge up
significantly, while keeping the conduction band edge almost unchanged. The calculated defect
binding energies indicate that the co-doped systems are energetically favorable than their
respective mono-doped systems. (C) 2012 Elsevier B. V. All rights reserved.
语种: English
文献类型: Article
KeyWords
Plus:
NITROGEN-DOPED
SRTIO3;
AUGMENTED-WAVE
ELECTRONIC-STRUCTURE; BAND-STRUCTURE; EXCHANGE; METAL
METHOD;
地址: [Liu, Hongfei; Dong, Huafeng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, Beijing 100083, Peoples R China.
[Meng, Xiuqing; Wu, Fengmin] Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua
321004, Peoples R China.
通讯作者地址: Liu, HF (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: liuhf@semi.ac.cn
ISSN: 0009-2614
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 11104250
61274099
This work is supported by the National Natural Science Foundation of China under Grant No.
11104250, 61274099. Hongfei Liu would like to thank Professor Jingbo Li, Institute of
Semiconductors, Chinese Academy of Sciences, for his helpful discussion.
-------------------------------------------------------------------------------第 167 条，共 234 条
标 题 :
High
performance
thin
film
transistors
based
on
regioregular
poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes
作者: Wang, C (Wang, Chao); Qian, L (Qian, Long); Xu, WY (Xu, Wenya); Nie, SH (Nie, Shuhong);
Gu, WB (Gu, Weibing); Zhang, JH (Zhang, Jianhui); Zhao, JW (Zhao, Jianwen); Lin, J (Lin, Jian);
Chen, Z (Chen, Zheng); Cui, Z (Cui, Zheng)
来源出版物: NANOSCALE 卷: 5 期: 10 页: 4156-4161 DOI: 10.1039/c3nr34304a
2013
出版年:
摘要: In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs
(sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is
presented. The absorption spectra and Raman spectra demonstrated that metallic species of arc
discharge SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the
aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to
fabricate thin film transistors (TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an
effective mobility of similar to 34 cm(2) V-1 s(-1) and on-off ratios of similar to 10(7) have been
achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned
interdigitated gold electrode arrays. The printed devices also showed excellent electrical
properties with a mobility of up to 6.6 cm(2) V-1 s(-1) and on-off ratios of up to 10(5). Printed
inverters based on the TFTs have been constructed on glass substrates, showing a maximum
voltage gain of 112 at a V-dd of -5 V. This work paves the way for making printable logic circuits
for real applications.
语种: English
文献类型: Article
KeyWords Plus: FIELD-EFFECT TRANSISTORS; SELECTIVE DISPERSION; SEPARATION; POLYMER;
EXTRACTION; FUNCTIONALIZATION; ELECTRONICS; FABRICATION; CIRCUITS; FLUORENE
地址: [Wang, Chao; Qian, Long; Xu, Wenya; Nie, Shuhong; Gu, Weibing; Zhang, Jianhui; Zhao,
Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion,
Printable Elect Res Ctr, SEID, Suzhou 215123, Jiangsu, Peoples R China.
[Wang, Chao] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Wang, Chao] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.
通讯作者地址: Zhao, JW (通讯作者),Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion,
Printable Elect Res Ctr, SEID, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R
China.
电子邮件地址: jwzhao2011@sinano.ac.cn; zcui2009@sinano.ac.cn
ISSN: 2040-3364
基金资助致谢:
基金资助机构 授权号
Natural Science Foundation of China 91123034
61102046
Chinese Academy of Sciences KJCX2-EW-M02
Basic Research Programme of Jiangsu Province BK2011364
This work was supported by the Natural Science Foundation of China (91123034, 61102046), the
Knowledge Innovation Programme of the Chinese Academy of Sciences (KJCX2-EW-M02) and
Basic Research Programme of Jiangsu Province (BK2011364).
-------------------------------------------------------------------------------第 168 条，共 234 条
标题: Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on
Si(001) substrate
作者: Liu, Z (Liu Zhi); Li, YM (Li Ya-Ming); Xue, CL (Xue Chun-Lai); Cheng, BW (Cheng Bu-Wen);
Wang, QM (Wang Qi-Ming)
来 源 出 版 物 : ACTA PHYSICA SINICA
卷 : 62
期: 7
文 献 号 : 076108
DOI:
10.7498/aps.62.076108 出版年: 2013
摘要: Four-bilayer Ge quantum dots (QDs) with Si spacers were epitaxially grown on Si(001)
substrates by means of ultrahigh vacuum chemical vapor deposition. In two samples, Ge QDs
were in situ doped with phosphorus or boron, separately. Surface morphology and room
temperature photoluminescence (PL) of multilayer Ge/Si QDs wer studied. Compared with the
undoped Ge QDs, phosphorus-doping did not change the morphology of Ge QDs, enhanced PL
wer observed from the phosphorus-doped Ge QDs. But reduction of Ge QDs density and PL
intensity wer observed from the boron-doped Ge QDs. The intensity enhancement of PL could be
attributed to the sufficient supply of electrons in Ge QDs for radiative recombination.
语种: Chinese
文献类型: Article
作者关键词: Ge/Si quantum dots; phosphorus-doped; photoluminescence
KeyWords Plus: TEMPERATURE; ISLANDS; DIODES; BORON
地址: [Liu Zhi; Li Ya-Ming; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming] Chinese Acad Sci, Inst
Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Cheng, BW (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: cbw@red.semi.ac.cn
ISSN: 1000-3290
基金资助致谢:
基金资助机构 授权号
Major State Basic Research Development Program of China 2013CB632103
National Natural Science Foundation of China 61036003
61176013
61177038
Project supported by the Major State Basic Research Development Program of China (Grant No.
2013CB632103), and the National Natural Science Foundation of China (Grant Nos. 61036003,
61176013, 61177038).
-------------------------------------------------------------------------------第 169 条，共 234 条
标题: Laser beam shaping with an ellipsoidal lens
作者: Luo, DX (Luo, Daxin); Zhao, BQ (Zhao, Baiqin); Chen, XL (Chen, Xuelei)
来源出版物: OPTIK 卷: 124 期: 7 页: 565-569 DOI: 10.1016/j.ijleo.2011.12.023 出版年:
2013
摘要: This paper presents a semiconductor laser beam shaping system that can collimate the
irradiance profile effectively by using an ellipsoidal lens. Geometrical optics analysis based on the
ray tracing method is done and the formulas to calculate the shape of ellipsoidal lens are given.
Both the theoretical and experimental result show that the laser beam system works effectively;
the divergence angle is reduced to less than 1 in the fast-axial direction. By using epoxy resin, this
shaper collimates a semiconductor laser beam and packages the laser diode (LD) at the same
time, which simplifies the manufacturing process and greatly reduces the LD volume. Because of
the small volume, low-cost, high rigidity and easy fabrication, the shaper is of great value in the
field of semiconductor laser diode applications. (c) 2012 Elsevier GmbH. All rights reserved.
语种: English
文献类型: Article
作者关键词: Beam shaping; Semiconductor laser; Ellipsoidal lens; Geometrical optics
KeyWords Plus: DESIGN; CIRCULARIZATION; COLLIMATION
地址: [Luo, Daxin; Zhao, Baiqin; Chen, Xuelei] Chinese Acad Sci, Inst Semicond, Beijing 100190,
Peoples R China.
通讯作者地址: Luo, DX (通讯作者),Inst Semicond, 1 621,Jia 35, Beijing 100083, Peoples R China.
电子邮件地址: luodaxin@gmail.com
ISSN: 0030-4026
-------------------------------------------------------------------------------第 170 条，共 234 条
标题: Optical transition of the charged excitons in InAs single quantum dots
作者: Li, WS (Li Wen-Sheng); Sun, BQ (Sun Bao-Quan)
来 源 出 版 物 : ACTA PHYSICA SINICA
卷 : 62
期: 4
文 献 号 : 047801
DOI:
10.7498/aps.62.047801 出版年: 2013
摘要: Quantum dot (QD) samples studied in the experiment are grown by molecular-beam
epitaxy on semi-insulating GaAs substrates. The photoluminescences (PLs) of the excitons in a
single QD are measured at 5 K. The PL spectra of the excitons, biexcitons and charged excitons are
identified by measuring and analyzing both PL peaks of the circular and linear polarization and
power-dependent PL properties. The charged exciton emissions can be tuned by applying a bias
voltage, i.e., negatively charged excitons are changed into positively charged excitons by changing
the voltage from 1.0 to -1.0 V. It is shown that the electron-spin will slowly relax compared with
that of the hole when they relax from wetting layer into the QD.
语种: Chinese
文献类型: Article
作者关键词: InAs quantum dot; excitons; photoluminescence spectrum; electric tuning
地址: [Li Wen-Sheng] Tongliao Profess Educ Coll, Coll Chem Engn, Tongliao 028000, Peoples R
China.
[Sun Bao-Quan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,
Beijing 100083, Peoples R China.
通讯作者地址: Sun, BQ (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices
& Microstruct, Beijing 100083, Peoples R China.
电子邮件地址: bqsun@semi.ac.cn
ISSN: 1000-3290
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 11074246
Project supported by the National Natural Science Foundation of China (Grand No. 11074246).
-------------------------------------------------------------------------------第 171 条，共 234 条
标题: High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy
作者: Su, SJ (Su Shao-Jian); Zhang, DL (Zhang Dong-Liang); Zhang, GZ (Zhang Guang-Ze); Xue, CL
(Xue Chun-Lai); Cheng, BW (Cheng Bu-Wen); Wang, QM (Wang Qi-Ming)
来 源 出 版 物 : ACTA PHYSICA SINICA
卷 : 62
期: 5
文 献 号 : 058101
DOI:
10.7498/aps.62.058101 出版年: 2013
摘要: As a new group-IV semiconductor alloy, Ge1-xSnx is a very promising material for
applications in photonic and microelectronic devices. In this work, high-quality germanium-tin
(Ge1-xSnx) alloys are grown on Ge(001) substrates by molecular beam epitaxy, with x = 1.5%,
2.4%, 2.8%, 5.3%, and 14%. The Ge1-xSnx alloys are characterized by high resolution X-ray
diffraction (HR-XRD), Rutherford backscattering spectra (RBS), and transmission electron
micrograph (TEM). For the samples with Sn composition x <= 5.3%, the Ge1-xSnx alloys each
exhibit a very high crystalline quality. The ratio of channel yield to random yield (chi(min)) in the
RBS spectrum is only about 5%, and the full width at half maximum (FWHM) of the Ge1-xSnx
peak in HR-XRD curve is 100 ''. For the sample with x = 14%, the crystalline quality of the alloy is
degraded and FWHM is 264.6 ''.
语种: Chinese
文献类型: Article
作者关键词: germanium-tin (Ge1-xSnx) alloy; germanium (Ge); molecular beam epitaxy (MBE)
KeyWords Plus: LOW-TEMPERATURE GROWTH; SEMICONDUCTORS; GAP
地址: [Su Shao-Jian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China.
[Zhang Dong-Liang; Zhang Guang-Ze; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming] Chinese Acad
Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Cheng, BW (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: cbw@semi.ac.cn
ISSN: 1000-3290
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61036003
61176013
60906035
61177038
Science Foundation of Huaqiao University 12B5221
Project supported by the National Natural Science Foundation of China (Grant Nos. 61036003,
61176013, 60906035, 61177038), and the Science Foundation of Huaqiao University (Grant No.
12B5221).
-------------------------------------------------------------------------------第 172 条，共 234 条
标题: Far infrared response of silicon nanowire arrays
作者: Fobelets, K (Fobelets, K.); Li, CB (Li, C. B.); Coquillat, D (Coquillat, D.); Arcade, P (Arcade, P.);
Teppe, F (Teppe, F.)
来源出版物: RSC ADVANCES 卷: 3 期: 13 页: 4434-4439 DOI: 10.1039/c3ra22880k 出版
年: 2013
摘要: The reflection, transmission and absorbance spectra of silicon nanowire arrays ( NWAs), as
a function of the length of the nanowires, are investigated in a wavelength range of 15 mu m <
lambda < 200 mu m, using Fourier transform infrared spectroscopy in vacuum. The NWAs are
fabricated using metal-assisted electroless chemical etching. The wire length is varied between 20
mu m and 140 mu m, which is of the same order of magnitude as the wavelength, and their
spectra are compared to bulk Si. At high frequencies the absorbance spectra of the NWAs show
molecular resonances due to adsorption of molecules involved in the fabrication process but also
due to the oxide quality that wraps the nanowires and changes as a function of nanowire length.
Transmission characteristics show an increasing shift in absorption band edge towards the far
infrared for longer wires and a transition from specular to diffuse reflection at a nanowire length
of approximately 60 mu m.
语种: English
文献类型: Article
KeyWords Plus: PHOTOVOLTAIC
OXIDATION; SURFACE; UNIFORM
APPLICATIONS;
ELECTRICAL-PROPERTIES;
FABRICATION;
地址: [Fobelets, K.; Li, C. B.] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn,
London SW7 2AZ, England.
[Li, C. B.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,
Peoples R China.
[Coquillat, D.; Arcade, P.; Teppe, F.] Univ Montpellier 2, CNRS, UMR 5221, Lab Charles Coulomb,
F-34950 Montpellier, France.
通讯作者地址: Fobelets, K (通讯作者),Univ London Imperial Coll Sci Technol & Med, Dept Elect
& Elect Engn, Exhibit Rd, London SW7 2AZ, England.
电子邮件地址: k.fobelets@imperial.ac.uk
ISSN: 2046-2069
基金资助致谢:
基金资助机构 授权号
e-on International Research Initiative project
This work was supported by the e-on International Research Initiative project. K. F. thanks J.
Lusakowski for useful discussions.
-------------------------------------------------------------------------------第 173 条，共 234 条
标题: Fiber Bragg grating soil-pressure sensor based on dual L-shaped levers
作者: Li, F (Li, Feng); Du, YL (Du, Yanliang); Zhang, WT (Zhang, Wentao); Li, F (Li, Fang)
来 源 出 版 物 : OPTICAL ENGINEERING
卷 : 52
期: 1
文 献 号 : 014403
DOI:
10.1117/1.OE.52.1.014403 出版年: JAN 2013
摘要: A fiber Bragg grating (FBG) soil-pressure sensor based on dual L-shaped levers is proposed
and demonstrated. Using dual L-shaped levers, the deformation of the diaphragm, which
experiences the soil pressure, will be transferred to the longitudinal strain of the FBG. The
theoretical analysis on the sensitivity of the proposed sensor is given. The sensor has been
calibrated in the laboratory. Experimental results show a good agreement with theoretical
expectations. Furthermore, this soil-pressure sensor has been installed in an earth dam in Beijing,
China. Drifting of the FBG wavelength has been collected in rainy days from May to July 2012. It
has been found that the earth dam has an obvious change of internal stress in the rainstorm. (C)
2013 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.OE.52.1.014403]
语种: English
文献类型: Article
作者关键词: fiber Bragg grating; soil pressure sensor; dual L-shaped levers; monitoring
地址: [Li, Feng; Zhang, Wentao; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab,
Beijing 100083, Peoples R China.
[Li, Feng; Du, Yanliang] Shijiazhuang Tiedao Univ, Struct Hlth Monitoring & Control Inst,
Shijiazhuang, Peoples R China.
通讯作者地址: Li, F (通讯作者),Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing
100083, Peoples R China.
电子邮件地址: zhangwt@semi.ac.cn
ISSN: 0091-3286
基金资助致谢:
基金资助机构 授权号
Beijing Science & Technology New Star Program 2010B055
National Science Foundation of China 41074128
This work is supported by Beijing Science & Technology New Star Program (2010B055) and
National Science Foundation of China (41074128).
-------------------------------------------------------------------------------第 174 条，共 234 条
标题: Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
作者: Zhao, WJ (Zhao, Weijie); Ghorannevis, Z (Ghorannevis, Zohreh); Chu, LQ (Chu, Leiqiang);
Toh, ML (Toh, Minglin); Kloc, C (Kloc, Christian); Tan, PH (Tan, Ping-Heng); Eda, G (Eda, Goki)
来源出版物: ACS NANO 卷: 7 期: 1 页: 791-797 DOI: 10.1021/nn305275h 出版年: JAN
2013
摘要: Geometrical confinement effect in exfoliated sheets of layered materials leads to significant
evolution of energy dispersion in mono- to few-layer thickness regime. Molybdenum disulfide
(MoS2) was recently found to exhibit indirect-to-direct gap transition when the thickness is
reduced to a single monolayer. Emerging photoluminescence (PL) from monolayer MoS2 opens
up opportunities for a range of novel optoelectronic applications of the material. Here we report
differential reflectance and PL spectra of mono- to few-layer WS2 and WSe2 that indicate that
the band structure of these materials undergoes similar indirect-to-direct gap transition when
thinned to a single monolayer. The transition is evidenced by distinctly enhanced PL peak
centered at 630 and 750 nm in monolayer WS2 and WSe2, respectively. Few-layer flakes are
found to exhibit comparatively strong indirect gap emission along with direct gap hot electron
emission, suggesting high quality of synthetic crystals prepared by a chemical vapor transport
method. Fine absorption and emission features and their thickness dependence suggest a strong
effect of Se p-orbitals on the d electron band structure as well as interlayer coupling in WSe2.
语种: English
文献类型: Article
作者关键词: WS2; WSe2; 2D crystals; photoluminescence
KeyWords
Plus:
TRANSITION-METAL
DICHALCOGENIDES;
SINGLE-LAYER
MOS2;
BAND-STRUCTURES; MONOLAYER MOS2; VALLEY POLARIZATION; INTEGRATED-CIRCUITS; 2D
SEMICONDUCTORS; FILM TRANSISTORS; PHOTOTRANSISTORS; MOLYBDENUM
地址: [Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang; Eda, Goki] Natl Univ Singapore, Dept
Phys, Singapore 117542, Singapore.
[Eda, Goki] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore.
[Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang; Eda, Goki] Natl Univ Singapore, Graphene Res
Ctr, Singapore 117546, Singapore.
[Toh, Minglin; Kloc, Christian] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798,
Singapore.
[Tan, Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct,
Beijing 100083, Peoples R China.
通讯作者地址: Eda, G (通讯作者),Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542,
Singapore.
电子邮件地址: g.eda@nus.edu.sg
ISSN: 1936-0851
基金资助致谢:
基金资助机构 授权号
Singapore National Research Foundation NRF-NRFF2011-02
NSFC 10934007
11225421
G. Eda acknowledges Singapore National Research Foundation for funding the research under
NRF Research Fellowship (NRF-NRFF2011-02). P. H. Tan acknowledges the support from NSFC
under Grants 10934007 and 11225421.
-------------------------------------------------------------------------------第 175 条，共 234 条
标题: The measurement of magneto-optical Kerr effect of ultrathin films in a pulsed magnetic
field
作者: Chen, X (Chen, Xi); Qian, X (Qian, Xuan); Meng, KK (Meng, Kangkang); Zhao, JH (Zhao,
Jianhua); Ji, Y (Ji, Yang)
来 源 出 版 物 : MEASUREMENT
卷 : 46
期 : 1
页 : 52-56
DOI:
10.1016/j.measurement.2012.05.014 出版年: JAN 2013
摘要: A Kerr rotation measurement system in a pulsed magnetic field (up to 11 T) was built to
study magnetic properties of several ultrathin films. Our result shows that the Kerr rotation angle
increases with the increasing wavelength of the incident light, while the difference between the
spectras of Fe and CoFeAl is attributed to plasma resonance. We also studied the dynamic
properties of the magnetic films: while ferromagnetic materials (Fe, CoFeAl, MnAs and CoMnAl)
show quasi-static behavior in the time-scale of a few 100 mu s, diamagnetic material GaAs shows
time-dependent hysteresis. Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights
reserved.
语种: English
文献类型: Article
作者关键词: Kerr effect; Pulsed magnetic field; Magnetization process; Ultrathin films
KeyWords Plus: ROTATION
地址: [Chen, Xi; Qian, Xuan; Meng, Kangkang; Zhao, Jianhua; Ji, Yang] Chinese Acad Sci, Inst
Semicond, SKLSM, Beijing 100083, Peoples R China.
通讯作者地址: Ji, Y (通讯作者),Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing
100083, Peoples R China.
电子邮件地址: jiyang@semi.ac.cn
ISSN: 0263-2241
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2009CB929301
NSFC 10911130232
10674129
91021022
This work was supported by the National Basic Research Program of China under Grant No.
2009CB929301 and the NSFC under Grant No. 10911130232 (under Contract No. 10674129) and
No. 91021022.
-------------------------------------------------------------------------------第 176 条，共 234 条
标题: Improved performance of dye-sensitized solar cells with TiO2 nanocrystal/nanowires
double-layered films as photoelectrode
作者: Meng, XQ (Meng, Xiuqing); Wang, Y (Wang, Yan); Wang, ML (Wang, Meili); Tu, JL (Tu, Jielei);
Wu, FM (Wu, Fengmin)
来源出版物: RSC ADVANCES 卷: 3 期: 10 页: 3304-3308 DOI: 10.1039/c2ra23430k 出版
年: 2013
摘要: A double-layered (DL) photoanode is fabricated based on TiO2 nanowire (NW) arrays
coated by TiO2 nanocrystal (NC) films on their top. The highest efficiency of the obtained
double-layered photoanode cells is similar to 4.67% with 8 mu m-long NW arrays and 6 mu
m-thick NC films. This efficiency is much higher than that of the devices with the pure TiO2 NC
films or the pure TiO2 NW arrays as electrodes due to the synergistic effect of the dye adsorption
and the rapid electron transport of NWs/NC structure.
语种: English
文献类型: Article
KeyWords Plus: NANOWIRE ARRAYS; PHOTOVOLTAIC PERFORMANCE; NANOPARTICLES;
COMPOSITES; NANOSHEETS
地址: [Meng, Xiuqing; Wu, Fengmin] Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED,
Jinhua 321004, Peoples R China.
[Wang, Yan; Wang, Meili] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Tu, Jielei] Yunnan Normal Univ, Solar Energy Res Inst, Kunming 650092, Yunnan Province, Peoples
R China.
通讯作者地址: Meng, XQ (通讯作者),Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED,
Jinhua 321004, Peoples R China.
ISSN: 2046-2069
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 11104250
61274099
Science Technology Department of Zhejiang Province 2012C21007
This work is supported by the National Natural Science Foundation of China (Grant No. 11104250,
61274099) and the Science Technology Department of Zhejiang Province (Grant No.
2012C21007).
-------------------------------------------------------------------------------第 177 条，共 234 条
标题: Improved transport properties of graphene/GaN junctions in GaN-based vertical light
emitting diodes by acid doping
作者: Wang, LC (Wang, Liancheng); Zhang, YY (Zhang, Yiyun); Li, X (Li, Xiao); Guo, EQ (Guo,
Enqing); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan); Zhu, HW (Zhu, Hongwei); Wang, GH (Wang,
Guohong)
来源出版物: RSC ADVANCES 卷: 3 期: 10 页: 3359-3364 DOI: 10.1039/c2ra22170e 出版
年: 2013
摘要: Electrical characteristics of p-, n-GaN/graphene junctions before and after nitric acid
doping have been investigated. Acid treatment can significantly improve the junction
conductance in both cases, which is advantageous for the light emitting diode (LED) to reduce the
operating voltage. GaN-based vertical LEDs incorporating graphene as transparent electrodes are
further assembled and tested, showing significant improvement in forward electrical
characteristics and light output power upon acid modification.
语种: English
文献类型: Article
KeyWords Plus: SOLAR-CELLS
地址: [Wang, Liancheng; Zhang, Yiyun; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong]
Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083,
Peoples R China.
[Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Dept Mech Engn, Key Lab Adv Mfg Mat Proc Technol,
Beijing 100084, Peoples R China.
[Zhu, Hongwei] Tsinghua Univ, CNMM, Beijing 100084, Peoples R China.
通讯作者地址: Wang, LC (通讯作者),Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol
Res & Dev Ctr, Beijing 100083, Peoples R China.
电子邮件地址: spring@semi.ac.cn; hongweizhu@tsinghua.edu.cn
ISSN: 2046-2069
基金资助致谢:
基金资助机构 授权号
National High Technology Program of China 2011AA03A105
2011AA03A103
National Natural Science Foundation of China 60806001
50972067
National Basic Research Program of China 2011CB301904
2011CB013000
This work was supported by the National High Technology Program of China (2011AA03A105 and
2011AA03A103), National Natural Science Foundation of China (60806001 and 50972067) and
the National Basic Research Program of China (2011CB301904 and 2011CB013000).
-------------------------------------------------------------------------------第 178 条，共 234 条
标题: High performance AlGaN/GaN power switch with Si3N4 insulation
作者: Lin, DF (Lin, Defeng); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Kang, H (Kang,
He); Wang, CM (Wang, Cuimei); Jiang, LJ (Jiang, Lijuan); Feng, C (Feng, Chun); Chen, H (Chen,
Hong); Deng, QW (Deng, Qingwen); Bi, Y (Bi, Yang); Zhang, JW (Zhang, Jingwen); Hou, X (Hou,
Xun)
来源出版物: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 卷: 61 期: 1 文献号: 10101
DOI: 10.1051/epjap/2012120366 出版年: JAN 2013
摘要: We report the fabrication of AlGaN/GaN high electron mobility transistors (MIS-HEMTs)
with a high breakdown voltage by employing a metal-insulator-semiconductor (MIS) gate
structure using Si3N4 insulator. The Si3N4 films were deposited by plasma enhanced chemical
vapor deposition (PECVD) as the surface passivation, interlayer films and the gate dielectric. In
comparison with Schottky-gate HEMTs, the gate leakage currents of MIS-HEMTs exhibited three
orders of magnitude reduction. With similar device structures, the off-state breakdown voltage of
MIS-HEMTs was 1050 V with a specific on-resistance of 4.0 m Omega cm(2), whereas the
breakdown voltage and specific on-resistance of SG-HEMTs were 740 V and 4.4 m Omega cm(2),
respectively. In addition, the MIS-HEMTs exhibited little current slump in the pulsed
measurements and possessed faster switch speed than Si MOSFET. We demonstrate that
AlGaN/GaN MIS-HEMTs are promising not only for microwave applications but also for high
power switching applications.
语种: English
文献类型: Article
KeyWords Plus: HIGH BREAKDOWN VOLTAGE; FIELD-EFFECT TRANSISTORS; ON-STATE RESISTANCE;
GATE INSULATOR; HFET; DEVICES
地址: [Lin, Defeng; Wang, Xiaoliang; Xiao, Hongling; Kang, He; Wang, Cuimei; Jiang, Lijuan; Feng,
Chun; Chen, Hong; Deng, Qingwen; Bi, Yang] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing
100083, Peoples R China.
[Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong] Chinese
Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
[Wang, Xiaoliang; Zhang, Jingwen; Hou, Xun] ISCAS XJTU Joint Lab Funct Mat & Devices Informat,
Beijing 100083, Peoples R China.
通讯作者地址: Lin, DF (通讯作者),Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing
100083, Peoples R China.
电子邮件地址: xlwang@semi.ac.cn
ISSN: 1286-0042
基金资助致谢:
基金资助机构 授权号
Knowledge Innovation Engineering of Chinese Academy of Sciences YYYJ-0701-02
National Nature Sciences Foundation of China 60890193
60906006
State Key Development Program for Basic Research of China 2006CB604905
2010CB327503
Knowledge Innovation Program of the Chinese Academy of Sciences ISCAS2008T01
ISCAS2009L01
ISCAS2009L02
This work was supported by the Knowledge Innovation Engineering of Chinese Academy of
Sciences (No. YYYJ-0701-02); the National Nature Sciences Foundation of China (Nos. 60890193
and 60906006); the State Key Development Program for Basic Research of China (Nos.
2006CB604905 and 2010CB327503), and the Knowledge Innovation Program of the Chinese
Academy of Sciences (Nos. ISCAS2008T01, ISCAS2009L01and ISCAS2009L02).
-------------------------------------------------------------------------------第 179 条，共 234 条
标题: Structural, elastic, electronic and dynamical properties of Ba2MgWO6 double perovskite
under pressure from first principles
作者: Shi, LW (Shi, Liwei); Wu, L (Wu, L.); Duan, YF (Duan, Y. F.); Hu, J (Hu, J.); Yang, XQ (Yang, X.
Q.); Tang, G (Tang, G.); Hao, LZ (Hao, L. Z.)
来 源 出 版 物 : EUROPEAN PHYSICAL JOURNAL B 卷 : 86 期 : 1 文 献 号 : 9 DOI:
10.1140/epjb/e2012-30584-1 出版年: JAN 2013
摘要: Ab initio calculations within the framework of density-functional theory employing the
local density approximation have been performed to study the structural, elastic, electronic and
dynamical properties for cubic double perovskite Ba2MgWO6 under hydrostatic pressure. The
calculated ground-state properties and compression curve are in good agreement with the
available experimental results. Pressure-induced enhancements of elastic constants, aggregate
elastic moduli, elastic wave velocities and Debye temperature are observed, without any
softening behaviors. Upon compression, the fundamental indirect energy gap E-g(Gamma-X) first
increases slightly and then monotonically decreases. A linear-response approach is adopted to
derive the full phonon-dispersion curves and phonon density of states. Evolution with pressure of
the zone-center phonon frequencies for Raman-and infrared-active modes is analyzed. A
pressure-induced soft optically silent T-1g phonon mode is identified near the Gamma point,
signifying a structural dynamical instability. Our calculated results reveal that, when the pressure
is high enough, besides bond shortening, the W-O-Mg bond becomes nonlinear, resulting in
octahedral tilting distortion and thus a slight departure from the ideal cubic symmetry.
语种: English
文献类型: Article
KeyWords Plus: FUNCTIONAL PERTURBATION-THEORY; VIBRATIONAL-SPECTRA; ORDERED
PEROVSKITES; CRYSTAL STABILITY; PHASE-TRANSITIONS; SR2MWO6 M; CONSTANTS;
TEMPERATURE; SR2CAWO6; OXIDES
地址: [Shi, Liwei; Wu, L.; Duan, Y. F.; Hu, J.; Yang, X. Q.; Tang, G.] China Univ Min & Technol, Sch
Sci, Dept Phys, Xuzhou 221116, Peoples R China.
[Shi, Liwei; Wu, L.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,
Peoples R China.
[Hao, L. Z.] China Univ Petr, Fac Sci, Qingdao 266555, Peoples R China.
通讯作者地址: Shi, LW (通讯作者),China Univ Min & Technol, Sch Sci, Dept Phys, Xuzhou 221116,
Peoples R China.
电子邮件地址: liweishi@semi.ac.cn
ISSN: 1434-6028
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 11204371
Fundamental Research Funds for the Central Universities of China 2012QNA39
We thank Dr. Shandong Guo from Institute of Physics Chinese Academy of Sciences for the useful
discussions. The computational codes were provided by Dr. Na Yin from School of Physics,
Shandong University. The work is supported by the National Natural Science Foundation of China
under Grant No. 11204371, and the Fundamental Research Funds for the Central Universities of
China under Grant No. 2012QNA39.
-------------------------------------------------------------------------------第 180 条，共 234 条
标题: XOR/XNOR directed logic circuit based on coupled-resonator-induced transparency
作者: Tian, YH (Tian, Yonghui); Zhang, L (Zhang, Lei); Xu, QF (Xu, Qianfan); Yang, L (Yang, Lin)
来 源 出 版 物 : LASER & PHOTONICS REVIEWS 卷 : 7 期 : 1 页 : 109-113 DOI:
10.1002/lpor.201200036 出版年: JAN 2013
摘要: The coupled-resonator-induced transparency (CRIT) effect in parallel-coupled double
microring resonators (MRRs) has been widely studied, and various applications based on the CRIT
have been demonstrated. As an application of the CRIT, we propose and demonstrate a directed
logic circuit that can implement the XOR and XNOR operations. Two electrical signals applied to
the two MRRs represent the two operands of the logical operations, and the operational results
are represented by the output optical signal. As a proof-of-concept, the thermo-optic modulating
scheme is employed with an operational speed of 10 kbps.
语种: English
文献类型: Article
作者关键词: Coupled-resonator-induced transparency; microring resonator; directed logic;
silicon waveguide; XOR/XNOR operation
KeyWords Plus: ELECTROMAGNETICALLY INDUCED TRANSPARENCY; MICRORING RESONATORS;
OPTICAL MODULATION; LIGHT; SWITCHES; SYSTEM
地址: [Tian, Yonghui; Zhang, Lei; Yang, Lin] Chinese Acad Sci, Inst Semicond, State Key Lab
Integrated Optoelect, Beijing 100083, Peoples R China.
[Xu, Qianfan] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA.
通讯作者地址: Yang, L (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: oip@semi.ac.cn
ISSN: 1863-8880
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China (NSFC) 61235001
60977037
61204061
61205008
National High Technology Research and Development Program of China 2012AA012202
This work has been supported by the National Natural Science Foundation of China (NSFC) under
grants 61235001, 60977037, 61204061 and 61205008, and by the National High Technology
Research and Development Program of China under grant 2012AA012202.
-------------------------------------------------------------------------------第 181 条，共 234 条
标题: Ag nanoparticles preparation and their light trapping performance
作者: Bai, YM (Bai YiMing); Wang, J (Wang Jun); Yin, ZG (Yin ZhiGang); Chen, NF (Chen NuoFu);
Zhang, XW (Zhang XingWang); Fu, Z (Fu Zhen); Yao, JX (Yao JianXi); Li, N (Li Ning); He, HY (He
HaiYang); Guli, MN (Guli MiNa)
来源出版物: SCIENCE CHINA-TECHNOLOGICAL SCIENCES 卷: 56 期: 1 页: 109-114 DOI:
10.1007/s11431-012-5010-7 出版年: JAN 2013
摘要: Ag nanoparticles were fabricated on Si substrates by radio-frequency magnetron sputtering
and thermal annealing treatments. It was found that Ag nanoparticles are ellipsoid at low
annealing temperature, but the axis ratio decreases with the increase of annealing temperature,
and a shape transformation from ellipsoid to sphere occurs when the temperature increases to a
critical point. The experimental results showed that the surface plasmon resonances depend
greatly on the nanoparticles'shape and size, which is in accordance with the theoretical
calculation based on discrete dipole approximation. The results of forward-scattering efficiency
(FSE) and light trapping spectrum (LTS) showed that Ag nanoparticles annealed at 400 degrees C
could strongly enhance the light harvest than those annealed at 300 and 500 degrees C, and that
the LTS peak intensity of the former is 1.7 and 1.5 times stronger than those of the later two
samples, respectively. The conclusions obtained in this paper showed that Ag ellipsoid
nanoparticles with appropriate size is more favorable for enhancing the light trapping.
语种: English
文献类型: Article
作者关键词: thin film solar cells; light trapping structure; plasmonic nanoparticles
KeyWords Plus: FILM SOLAR-CELLS; PLASMONICS
地址: [Bai YiMing; Chen NuoFu; Yao JianXi; Li Ning; He HaiYang; Guli MiNa] N China Elect Power
Univ, Sch Renewable Energy Engn, Beijing 102206, Peoples R China.
[Bai YiMing; Chen NuoFu; Yao JianXi; Guli MiNa] New & Renewable Energy Beijing Key Lab, Beijing
102206, Peoples R China.
[Bai YiMing; Yin ZhiGang; Chen NuoFu; Zhang XingWang; Fu Zhen] Chinese Acad Sci, Key Lab
Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Wang Jun] Chinese Acad Sci, Natl Engn Res Ctr Optoelect Devices, Inst Semicond, Beijing 100083,
Peoples R China.
通讯作者地址: Bai, YM (通讯作者),N China Elect Power Univ, Sch Renewable Energy Engn,
Beijing 102206, Peoples R China.
电子邮件地址: ymbai@semi.ac.cn
ISSN: 1674-7321
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61006050
51072051
Natural Science Foundation of Beijing, China 2102042
Fundamental Research Funds for the Central Universities 10QG24
National High Technology Research and Development Program ("863" Project) 2011AA050507
National Basic Research Program of China ("973" Project) 2010CB93380
This work was supported by the National Natural Science Foundation of China (Grant Nos.
61006050 and 51072051), the Natural Science Foundation of Beijing, China (Grant No. 2102042),
the Fundamental Research Funds for the Central Universities (Grant No. 10QG24), the National
High Technology Research and Development Program ("863" Project)(Grant No. 2011AA050507),
and the National Basic Research Program of China ("973" Project)(Grant No. 2010CB93380).
-------------------------------------------------------------------------------第 182 条，共 234 条
标 题 : High Efficiency Grating Coupler for Coupling between Single-Mode Fiber and SOI
Waveguides
作者: Zhang, C (Zhang Can); Sun, JH (Sun Jing-Hua); Xiao, X (Xiao Xi); Sun, WM (Sun Wei-Min);
Zhang, XJ (Zhang Xiao-Jun); Chu, T (Chu Tao); Yu, JZ (Yu Jin-Zhong); Yu, YD (Yu Yu-De)
来 源 出 版 物 : CHINESE PHYSICS LETTERS 卷 : 30 期 : 1 文 献 号 : 014207 DOI:
10.1088/0256-307X/30/1/014207 出版年: JAN 2013
摘要: A high efficiency grating coupler between single-mode fiber and silicon-on-insulator
waveguide is designed by a formula method. Over 78.5% coupling efficiency (>-1.05dB) with 3dB
bandwidth about 50nm for one grating coupler is obtained experimentally and this result is the
highest one as far as we know. This grating coupler is CMOS compatible which needs only one
etch-step and is designed for a standard SOI chip without any Bragg reflector or bottom reflector.
语种: English
文献类型: Article
KeyWords Plus: COMPACT
地址: [Zhang Can; Sun Jing-Hua; Sun Wei-Min; Zhang Xiao-Jun] Harbin Engn Univ, Coll Sci, Harbin
150001, Peoples R China.
[Zhang Can; Xiao Xi; Chu Tao; Yu Jin-Zhong; Yu Yu-De] Chinese Acad Sci, Inst Semicond, State Key
Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Yu, YD (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: yudeyu@semi.ac.cn
ISSN: 0256-307X
-------------------------------------------------------------------------------第 183 条，共 234 条
标题: The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal
technique
作者: Qiao, YB (Qiao, Yanbin); Feng, SW (Feng, Shiwei); Xiong, C (Xiong, Cong); Ma, XY (Ma,
Xiaoyu); Zhu, H (Zhu, Hui); Guo, CS (Guo, Chunsheng); Wei, GH (Wei, Guanghua)
来源出版物: SOLID-STATE ELECTRONICS 卷: 79 页: 192-195 DOI: 10.1016/j.sse.2012.07.007
出版年: JAN 2013
摘要: The thermal properties of AlGaAs/GaAs laser diode bars have been analyzed in detail by
transient thermal technique based on the diode forward voltage method on the vertical and
horizontal thermal conduction paths, respectively. On the vertical thermal conduction path, it is
found that the steady-state temperature rise of the central emitter among operated emitters has
a linear relationship with the logarithm of the total operating current. The time constant
determined for chip decreases with the total operating current, while the time constant
determined for solder/heat sink interface and package remains almost constant. In addition, the
effective thermal diffusivity of chip increases with total operating current. On the horizontal
thermal conduction path, the time constant varies linearly with the distance increasing, and the
effective thermal diffusivity remains almost constant. The results suggest that the thermal
crosstalk between emitters increases with the total operating current. (C) 2012 Elsevier Ltd. All
rights reserved.
语种: English
文献类型: Article
作者关键词: Thermal properties; Laser diode bars; The transient thermal technique; The time
constant; Effective thermal diffusivity
KeyWords Plus: BY-EMITTER DEGRADATION
地址: [Qiao, Yanbin; Feng, Shiwei; Xiong, Cong; Zhu, Hui; Guo, Chunsheng; Wei, Guanghua]
Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China.
[Ma, Xiaoyu] Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing
100083, Peoples R China.
通讯作者地址: Feng, SW (通讯作者),Beijing Univ Technol, Sch Elect Informat & Control Engn,
Beijing, Peoples R China.
电子邮件地址: shwfeng@bjut.edu.cn
ISSN: 0038-1101
基金资助致谢:
基金资助机构 授权号
High-tech Research and Development Program of China (863 Program) 2009AA032704
Beijing Natural Science Foundation, China 4122005
Doctoral Innovation Foundation of Beijing University of Technology YB201205
This work was financially supported by the High-tech Research and Development Program of
China (863 Program) under Grant No. 2009AA032704; the Beijing Natural Science Foundation,
China under Grant No. 4122005; the Doctoral Innovation Foundation of Beijing University of
Technology under Grant No. YB201205.
-------------------------------------------------------------------------------第 184 条，共 234 条
标题: Automatic Morphological Measurement of the Quantum Dots Based on Marker-Controlled
Watershed Algorithm
作者: Xu, LL (Xu, Lulu); Lu, HX (Lu, Huaxiang)
来源出版物: IEEE TRANSACTIONS ON NANOTECHNOLOGY 卷: 12 期: 1 页: 51-56 DOI:
10.1109/TNANO.2012.2229467 出版年: JAN 2013
摘要: In the field of material growth, the quantum dot (QD) image analysis is a fundamental tool.
The main challenge is that such study is used to be made by nonautomatic procedures which are
time consuming and subjective. We aim to implement an algorithm of automatic analysis of the
QDs images. In this frame, efficient QDs segmentation is prerequisite. In this paper, a fast and
robust method for the visual segmentation of QDs image based on marker-controlled watershed
transform is proposed. According to the foreground markers and the boundary of the coarse
partition, the watershed transform is utilized to accurately separate QDs. A next process is then
implemented to filter the possible attached substrates based on the area-height distribution of
the extracted QDs. Finally, almost all the QDs can be accurately and robustly extracted and thus
their properties can be measured. The experimental results show that the proposed approach
gives a good tradeoff between the easy usability and efficiency, execution time, and
segmentation quality.
语种: English
文献类型: Article
作者关键词: Marker-controlled watershed; mathematical morphological; quantum dots (QDs)
measurement; quantum dots (QDs) segmentation
KeyWords Plus: IMAGE SEGMENTATION
地址: [Xu, Lulu; Lu, Huaxiang] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Xu, LL (通讯作者),Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R
China.
电子邮件地址: ll2lovely@semi.ac.cn; luhx@semi.ac.cn
ISSN: 1536-125X
基金资助致谢:
基金资助机构 授权号
Natural Science Foundation of China 61076014
Chinese Academy of Sciences XDA06020700
This work was supported by the Natural Science Foundation of China under Grant 61076014 and
the "Strategic Priority Research Program" of the Chinese Academy of Sciences under Grant
XDA06020700. The review of this paper was arranged by Associate Editor C. A. Moritz.
-------------------------------------------------------------------------------第 185 条，共 234 条
标题: Enhancement of the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As
作者: Wang, HL (Wang HaiLong); Chen, L (Chen Lin); Zhao, JH (Zhao JianHua)
来源出版物: SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 卷: 56 期: 1 特刊: SI
页: 99-110 DOI: 10.1007/s11433-012-4959-3 出版年: JAN 2013
摘要: In this review article, we review the progress made in the past several years mainly
regarding the efforts devoted to increasing the Curie temperature (T (C)) of (Ga,Mn)As, which is
most widely considered as the prototype ferromagnetic semiconductor. Heavy Mn doping,
nanostructure engineering and post-growth annealing which increase T (C) are described in
detail.
语种: English
文献类型: Review
作 者 关 键 词 : magnetic semiconductors; magnetic properties of nanostructures;
magnetotransport phenomena; molecular-beam epitaxy
KeyWords Plus: MOLECULAR-BEAM EPITAXY; III-V SEMICONDUCTORS; MAGNETIC
SEMICONDUCTORS; GROWN GAAS; THIN-FILMS; GAMNAS; MANIPULATION; ELECTRONICS;
EXCESS; FIELD
地址: [Wang HaiLong; Chen Lin; Zhao JianHua] Chinese Acad Sci, State Key Lab Superlattices &
Microstruct, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Zhao, JH (通讯作者),Chinese Acad Sci, State Key Lab Superlattices & Microstruct,
Inst Semicond, Beijing 100083, Peoples R China.
电子邮件地址: jhzhao@red.semi.ac.cn
ISSN: 1674-7348
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60836002
11127406
10920101071
The authors acknowledge DENG JiaJun, ZHU Ke, ZHENG HouZhi, MISURACA Jennifer, XIONG Peng,
von MOLNAR Stephan, KHAZEN, Kh. and von BARDELEBEN H. J. for their collaborations. This work
was supported by the National Natural Science Foundation of China (Grant Nos. 60836002,
11127406 and 10920101071).
-------------------------------------------------------------------------------第 186 条，共 234 条
标题: Analysis of solar cells fabricated from UMG-Si purified by a novel metallurgical method
作者: Chen, T (Chen, Teng); Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Liu, T (Liu, Tong);
Wang, J (Wang, Jun); Xie, H (Xie, Hui)
来源出版物: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 卷: 28 期: 1 文献号: 015024
DOI: 10.1088/0268-1242/28/1/015024 出版年: JAN 2013
摘要: In this work, solar cells fabricated from 100% upgraded metallurgical grade (UMG) silicon
refined by a novel metallurgical route have been investigated. Compared with Siemens mc-Si
solar cells, the UMG mc-Si solar cells fabricated in the same process present higher open voltages
and fill factors, together with low initial light-induced degradation due to the material properties.
By secondary ion mass spectroscopy measurements, the UMG mc-Si solar cells show shallower
and better single-side abrupt junctions, resulting in higher photoelectric conversion in the wave
band from 400 nm to 750 nm as external quantum efficiency measurements demonstrated.
Although higher impurity content limits the minority carrier diffusion length, leading to lower
shot-circuit current density, the average efficiency of the UMG-Si solar cells fabricated in standard
production line is up to 16.55%, close to 16.69% of the reference solar cells. Furthermore, by an
additional phosphorous gettering process, the mean efficiency of the UMG-Si solar cells increases
to 16.68%, and the reverse characteristics of the corresponding cells have been significantly
improved.
语种: English
文献类型: Article
KeyWords Plus: GRADE SILICON; MULTICRYSTALLINE SILICON; PURIFICATION; FEEDSTOCK
地址: [Chen, Teng; Zhao, Youwen; Dong, Zhiyuan; Liu, Tong; Wang, Jun; Xie, Hui] Chinese Acad Sci,
Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: Chen, T (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: zhaoyw@semi.ac.cn
ISSN: 0268-1242
-------------------------------------------------------------------------------第 187 条，共 234 条
标题: Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas
mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors
作者: Ji, D (Ji, Dong); Lu, YW (Lu, Yanwu); Liu, B (Liu, Bing); Liu, GP (Liu, Guipeng); Zhu, QS (Zhu,
Qinsheng); Wang, ZG (Wang, Zhanguo)
来 源 出 版 物 : SOLID STATE COMMUNICATIONS 卷 : 153 期 : 1 页 : 53-57 DOI:
10.1016/j.ssc.2012.10.010 出版年: JAN 2013
摘要: Influences of the dielectric layer-induced interfacial charges on two-dimensional electron
gases (2DEGs) are theoretical calculated in thin-barrier Al2O3/AlGaN/GaN double heterojunction
high-electron mobility transistors (HEMTs). A decrease of 2DEG mobilities limited by three main
scattering mechanisms, including misfit dislocation, threading dislocation and interface
roughness scatterings, is observed with increasing value of the density of interfacial charges. The
results in this article can be used to design structures to generate higher mobility in
Al2O3/AlGaN/GaN double heterojunction HEMTs. (C) 2012 Elsevier Ltd. All rights reserved.
语种: English
文献类型: Article
作者关键词: Nitride semiconductor; Heterojunction; Two-dimensional electron gas; Mobility
KeyWords Plus: ATOMIC-LAYER-DEPOSITION; SEMICONDUCTORS; AL2O3
地址: [Ji, Dong; Lu, Yanwu; Liu, Bing] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R
China.
[Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Beijing 100083,
Peoples R China.
通讯作者地址: Lu, YW (通讯作者),Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R
China.
电子邮件地址: ywlu@bjtu.edu.cn
ISSN: 0038-1098
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60976070
Fundamental Research Funds for the Central Universities of China 2011JBZ013
2011YJS282
Excellent Science and Technology Innovation Program of Beijing Jiaotong University, China
This work is Project supported by the National Natural Science Foundation of China (Grant no.
60976070) and the Fundamental Research Funds for the Central Universities of China (Grant nos.
2011JBZ013 and 2011YJS282). One of the authors (Ji D) would like to acknowledge financial
support from the Excellent Science and Technology Innovation Program of Beijing Jiaotong
University, China.
-------------------------------------------------------------------------------第 188 条，共 234 条
标 题 : A lithography-independent and fully confined fabrication process of phase-change
materials in metal electrode nanogap with 16-mu A threshold current and 80-mV SET voltage
作者: Fu, YC (Fu, Yingchun); Wang, XF (Wang, Xiaofeng); Zhang, JY (Zhang, Jiayong); Wang, XD
(Wang, Xiaodong); Chang, C (Chang, Chun); Ma, HL (Ma, Huili); Cheng, KF (Cheng, Kaifang); Chen,
XG (Chen, Xiaogang); Song, ZT (Song, Zhitang); Feng, SL (Feng, Songlin); Ji, A (Ji, An); Yang, FH
(Yang, Fuhua)
来源出版物: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 卷: 110 期: 1 页:
173-177 DOI: 10.1007/s00339-012-7083-3 出版年: JAN 2013
摘要: In this paper,we fabricate a lateral phase change memory device composed of a Ge2Sb2Te5
nanowire (GST NW) fully confined in a tungsten electrode nanogap. A SiNx spacer is used not only
as etch mask for the fabrication of the GST NW, but also as sacrificial layer for the lift-off process,
which makes it feasible to fully confine the GST NW in the metal electrode nanogap. Electrical
characterization shows that the device has unprecedentedly low threshold current and SET
voltage of only 16 mu A and 80 mV, respectively.
语种: English
文献类型: Article
KeyWords Plus: MEMORY; NANOWIRES; NONVOLATILE
地址: [Fu, Yingchun; Wang, Xiaofeng; Zhang, Jiayong; Wang, Xiaodong; Chang, Chun; Ma, Huili;
Cheng, Kaifang; Ji, An; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond
Integrated Technol, Beijing 100083, Peoples R China.
[Fu, Yingchun; Zhang, Jiayong; Ma, Huili; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, State Key
Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
[Chen, Xiaogang; Song, Zhitang; Feng, Songlin] Chinese Acad Sci, Shanghai Inst Microsyst &
Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China.
通讯作者地址: Yang, FH (通讯作者),Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond
Integrated Technol, Beijing 100083, Peoples R China.
电子邮件地址: ycfu@semi.ac.cn; fhyang@semi.ac.cn
ISSN: 0947-8396
基金资助致谢:
基金资助机构 授权号
National High-tech Research and Development Program (863) 2008AA031402
National Natural Science Foundation of China 61076077
61106120
This work was supported in part by the National High-tech Research and Development Program
(863) under the grant number 2008AA031402, and the National Natural Science Foundation of
China under the grant numbers 61076077 and 61106120.
-------------------------------------------------------------------------------第 189 条，共 234 条
标题: Directed XOR/XNOR Logic Gates Using U-to-U Waveguides and Two Microring Resonators
作者: Tian, YH (Tian, Yonghui); Zhang, L (Zhang, Lei); Yang, L (Yang, Lin)
来源出版物: IEEE PHOTONICS TECHNOLOGY LETTERS 卷: 25 期: 1 页: 18-21 DOI:
10.1109/LPT.2012.2227307 出版年: JAN 1 2013
摘要: We propose and demonstrate a directed optical logic circuit, which can perform the XOR
and XNOR logical operations based on U-to-U waveguides and two microring resonators.
Compared to the previous structure, no waveguide crossings exist in the proposed circuit, which
is beneficial to reduce the insertion loss and crosstalk of the device. Two electrical signals
representing the two operands of the logical operation are employed to modulate two microring
resonators through the thermo-optic effect, respectively. The operation result is represented by
the output optical signal. For proof of principle, XOR and XNOR operations at 10 kb/s are
demonstrated.
语种: English
文献类型: Article
作者关键词: Directed logic; microring resonators; XOR and XNOR operations
KeyWords Plus: OPTICS; CIRCUITS
地址: [Tian, Yonghui; Zhang, Lei; Yang, Lin] Inst Semicond, State Key Lab Integrated Optoelect,
Beijing 100083, Peoples R China.
通讯作者地址: Tian, YH (通讯作者),Inst Semicond, State Key Lab Integrated Optoelect, Beijing
100083, Peoples R China.
电子邮件地址: tianyh@semi.ac.cn; zhanglei@semi.ac.cn; lyang@semi.ac.cn
ISSN: 1041-1135
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China (NSFC) 60977037
National High Technology Research and Development Program of China 2012AA012202
This work was supported in part by the National Natural Science Foundation of China (NSFC)
under Grant 60977037 and in part by the National High Technology Research and Development
Program of China under Grant 2012AA012202.
-------------------------------------------------------------------------------第 190 条，共 234 条
标题: Polarization division multiplexed photonic radio-frequency channelizer using an optical
comb
作者: Wang, LX (Wang, Li Xian); Zhu, NH (Zhu, Ning Hua); Li, W (Li, Wei); Wang, H (Wang, Hui);
Zheng, JY (Zheng, Jian Yu); Liu, JG (Liu, Jian Guo)
来 源 出 版 物 : OPTICS COMMUNICATIONS
卷 : 286
页 : 282-287
DOI:
10.1016/j.optcom.2012.08.054 出版年: JAN 1 2013
摘要: A polarization division multiplexed photonic radio-frequency (RF) channelizer based on an
optical comb is proposed and numerically investigated. A flat optical comb with nine lines is
generated using two cascaded Mach-Zehnder modulators. The input broadband signal is
simultaneously multicast by the optical comb and its frequency-shifted duplicate. These two
combs are polarization multiplexed, spectrally sliced by a Fabry-Perot etalon (FPE), polarization
de multiplexed and then channelized by wavelength division multiplexers (WDMs). The key
advantage of the proposed approach is that it releases the trade-off between the measurement
range and accuracy of a conventional optical comb based channelizer by a factor of 2. The impact
of the polarization misalignment, the capability of monitoring multi-frequency RF signals with
different powers and the reconfigurability of the system are also evaluated. (C) 2012 Elsevier B.V.
All rights reserved.
语种: English
文献类型: Article
作者关键词: Microwave photonics; Photonic RF channelizer; Optical comb; Polarization division
multiplex
KeyWords Plus: MICROWAVE; RF
地址: [Wang, Li Xian; Zhu, Ning Hua; Li, Wei; Wang, Hui; Zheng, Jian Yu; Liu, Jian Guo] Chinese
Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Wang, LX (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: lxwang@semi.ac.cn
ISSN: 0030-4018
基金资助致谢:
基金资助机构 授权号
Major Program of the National Natural Science Foundation of China 61090390
National Basic Research Program of China 2012CB315702
2012CB315703
Foundation for Innovative Research Groups of the National Natural Science Foundation of China
61021003
61275078
State Key Program of National Natural Science of China 61036012
National Natural Science Foundation of China 61177060
61108002
This work was partially supported by the Major Program of the National Natural Science
Foundation of China (Grant no. 61090390), the National Basic Research Program of China (Grant
nos. 2012CB315702, 2012CB315703), the Foundation for Innovative Research Groups of the
National Natural Science Foundation of China (Grant nos. 61021003, 61275078), the State Key
Program of National Natural Science of China (Grant no.61036012), the National Natural Science
Foundation of China (Grant no. 61177060, 61108002).
-------------------------------------------------------------------------------第 191 条，共 234 条
标题: Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for
silicon solar cells
作者: Fan, YJ (Fan, Yujie); Han, PD (Han, Peide); Liang, P (Liang, Peng); Xing, YP (Xing, Yupeng); Ye,
Z (Ye, Zhou); Hu, SX (Hu, Shaoxu)
来 源 出 版 物 : APPLIED SURFACE SCIENCE
卷 : 264
页 : 761-766
DOI:
10.1016/j.apsusc.2012.10.117 出版年: JAN 1 2013
摘要: In this paper, a series of comparative etching experiments on preparing inverted pyramids
of silicon solar cells have been carried out using tetramethyl ammonium hydroxide (TMAH) and
potassium hydroxide (KOH) at different etchant concentrations and temperatures on a patterned
(1 0 0) Si. These experiment results show that TMAH solution has higher undercut rate and lower
(1 0 0) plane etch rate than KOH solution, and the (1 1 1)/(1 0 0) etch rate ratio of TMAH is two to
three times that of KOH solution. Additionally, etch rate of SiO2 mask is an order of magnitude
lower in TMAH than in KOH. Besides, surface morphology analysis indicates that TMAH etching
can obtain much higher quality inverted pyramids of sharp vertex, smooth (1 1 1) sidewall and
uncontaminated surface than KOH etching, which makes TMAH etching samples show better
antireflection properties. Finally, the minimum reflectivity of TMAH etching sample low as 1.8% is
obtained for inverted pyramids covered with SiO2 reflectivity coating. So the study reveals that
TMAH is more attractive for the preparation of inverted pyramids than KOH. (C) 2012 Elsevier B. V.
All rights reserved.
语种: English
文献类型: Article
作者关键词: Silicon solar cell; Anisotropic etching; Inverted pyramid; TMAH; KOH; Reflectivity
KeyWords Plus: CRYSTALLINE SILICON; ALKALINE-SOLUTIONS; SURFACE; SI
地址: [Fan, Yujie; Han, Peide; Liang, Peng; Xing, Yupeng; Ye, Zhou; Hu, Shaoxu] Chinese Acad Sci,
State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Fan, YJ (通讯作者),Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst
Semicond, 35A Qinghua E Rd, Beijing 100083, Peoples R China.
电子邮件地址: fanyujie@semi.ac.cn
ISSN: 0169-4332
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60976046
60776046
60837001
61021003
Major State Basic Research Development Program of China (973 Program) 2010CB933804
This research is financially supported by the National Natural Science Foundation of China (No.
60976046, 60776046, 60837001 and 61021003) and the Major State Basic Research Development
Program of China (973 Program) (No. 2010CB933804). The authors would like to thank Zhao
Chunhua for her help in the SEM measurements and Zhu Xiaoning for his help in reflectivity
measurements.
-------------------------------------------------------------------------------第 192 条，共 234 条
标题: A modified SAG technique for the fabrication of DWDM DFB laser arrays with highly
uniform wavelength spacings
作者: Zhang, C (Zhang, Can); Liang, S (Liang, Song); Zhu, HL (Zhu, Hongliang); Wang, BJ (Wang,
Baojun); Wang, W (Wang, Wei)
来源出版物: OPTICS EXPRESS 卷: 20 期: 28 页: 29620-29625 出版年: DEC 31 2012
摘要: A modified selective area growth (SAG) technique, in which the effective index of only the
upper separate confinement heterostructure (SCH) layer are modulated to obtain different
emission wavelengths, is reported for the fabrication of dense wavelength division multiplexing
(DWDM) multi-wavelength laser arrays (MWLAs). InP based 1.5 mu m distributed feedback (DFB)
laser arrays with 0.8 nm, 0.42 nm, and 0.19 nm channel separations are demonstrated, all
showing highly uniform wavelength spacings. The standard deviation of the distribution of the
wavelength residues with respect to the corresponding linear fitting values is 0.0672 nm, which is
a lot smaller than those of the MWLAs fabricated by other techniques including electron beam
lithography. These results indicate that our SAG technique which needs only a simple procedure
is promising for the fabrication of low cost DWDM MWLAs. (C) 2012 Optical Society of America
语种: English
文献类型: Article
KeyWords Plus: OUTPUT-POWER; SYSTEMS; DIODES
地址: [Zhang, Can; Liang, Song; Zhu, Hongliang; Wang, Baojun; Wang, Wei] Chinese Acad Sci, Inst
Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China.
通讯作者地址: Zhang, C (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat,
Beijing 100083, Peoples R China.
电子邮件地址: liangsong@semi.ac.cn
ISSN: 1094-4087
基金资助致谢:
基金资助机构 授权号
National "863" project 2011AA010303
National Nature Science Foundation of China (NSFC) 61090392
61274071
61006044
National 973 Program 2012CB934202
The work is supported by the National "863" project (Grant No. 2011AA010303), the National
Nature Science Foundation of China (NSFC) (Grant Nos. 61090392, 61274071, 61006044), and the
National 973 Program (Grant No. 2012CB934202).
-------------------------------------------------------------------------------第 193 条，共 234 条
标 题 : Symmetry-dependent transport properties and bipolar spin filtering in zigzag
alpha-graphyne nanoribbons
作者: Yue, Q (Yue, Qu); Chang, SL (Chang, Shengli); Tan, JC (Tan, Jichun); Qin, SQ (Qin, Shiqiao);
Kang, J (Kang, Jun); Li, JB (Li, Jingbo)
来 源 出 版 物 : PHYSICAL REVIEW B
卷 : 86
期 : 23
文 献 号 : 235448
DOI:
10.1103/PhysRevB.86.235448 出版年: DEC 28 2012
摘要: First-principles calculations are performed to investigate the transport properties of zigzag
alpha-graphyne nanoribbons (ZaGNRs). It is found that asymmetric Z alpha GNRs behave as
conductors with linear current-voltage relationships, whereas symmetric Z alpha GNRs have very
small currents under finite bias voltages, similar to those of zigzag graphene nanoribbons. The
symmetry-dependent transport properties arise from different coupling rules between the pi and
pi* subbands around the Fermi level, which are dependent on the wave-function symmetry of
the two subbands. Based on the coupling rules, we further demonstrate the bipolar spin-filtering
effect in the symmetric Z alpha GNRs. It is shown that nearly 100% spin-polarized current can be
produced and modulated by the direction of bias voltage and/or magnetization configuration of
the electrodes. Moreover, the magnetoresistance effect with the order larger than 500 000% is
also predicted. Our calculations suggest Z alpha GNRs as a promising candidate material for
spintronics. DOI:10.1103/PhysRevB.86.235448
语种: English
文献类型: Article
KeyWords Plus: GRAPHENE NANORIBBONS; GRAPHDIYNE; MAGNETORESISTANCE; PREDICTIONS;
DEVICE; CARBON; SHEET
地址: [Yue, Qu; Chang, Shengli; Tan, Jichun; Qin, Shiqiao] Natl Univ Def Technol, Coll Sci,
Changsha 410073, Hunan, Peoples R China.
[Kang, Jun; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct,
Beijing 100083, Peoples R China.
通讯作者地址: Yue, Q (通讯作者),Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan,
Peoples R China.
电子邮件地址: jbli@semi.ac.cn
ISSN: 1098-0121
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholar 60925016
National Natural Science Foundation of China (NSFC) 11104347
11104349
Advanced Research Foundation of National University of Defense Technology JC-02-19
J.L. gratefully acknowledges financial support from the National Science Fund for Distinguished
Young Scholar (Grant No. 60925016). This work is supported by the National Natural Science
Foundation of China (NSFC) (Grants No. 11104347 and No. 11104349) and the Advanced
Research Foundation of National University of Defense Technology (Grant No. JC-02-19).
-------------------------------------------------------------------------------第 194 条，共 234 条
标题: Field-Field and Photon-Photon Correlations of Light Scattered by Two Remote Two-Level
InAs Quantum Dots on the Same Substrate
作者: Konthasinghe, K (Konthasinghe, K.); Peiris, M (Peiris, M.); Yu, Y (Yu, Y.); Li, MF (Li, M. F.); He,
JF (He, J. F.); Wang, LJ (Wang, L. J.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.); Shih, CK (Shih, C. K.);
Muller, A (Muller, A.)
来 源 出 版 物 : PHYSICAL REVIEW LETTERS 卷 : 109 期 : 26 文 献 号 : 267402 DOI:
10.1103/PhysRevLett.109.267402 出版年: DEC 28 2012
摘要: We report the measurement of field-field and photon-photon correlations of light scattered
by two InAs quantum dots separated by approximate to 40 mu m. Near 4 K a large fraction of
photons can be scattered coherently by each quantum dot leading to one-photon interference at
a beam splitter (visibility approximate to 20%). Simultaneously, two-photon interference is also
observed (visibility approximate to 40%) due to the indistinguishability of photons scattered by
the two different quantum emitters. We show how spectral diffusion accounts for the reduction
in interference visibility through variations in photon flux. DOI: 10.1103/PhysRevLett.109.267402
语种: English
文献类型: Article
KeyWords Plus: RESONANCE FLUORESCENCE; INTERFERENCE; ATOMS
地址: [Konthasinghe, K.; Peiris, M.; Muller, A.] Univ S Florida, Dept Phys, Tampa, FL 33620 USA.
[Yu, Y.; Li, M. F.; He, J. F.; Wang, L. J.; Ni, H. Q.; Niu, Z. C.] Chinese Acad Sci, Inst Semiconductors,
Beijing 100083, Peoples R China.
[Shih, C. K.] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA.
通讯作者地址: Konthasinghe, K (通讯作者),Univ S Florida, Dept Phys, Tampa, FL 33620 USA.
电子邮件地址: mullera@usf.edu
ISSN: 0031-9007
基金资助致谢:
基金资助机构 授权号
National Science Foundation NSF DMR-0906025
CMMI-0928664
National Natural Science Foundation of China 90921015
The authors acknowledge financial support from the National Science Foundation (NSF
DMR-0906025 and CMMI-0928664) and the National Natural Science Foundation of China (Grant
No. 90921015).
-------------------------------------------------------------------------------第 195 条，共 234 条
标题: Interface and transport properties of GaN/graphene junction in GaN-based LEDs
作者: Wang, LC (Wang, Liancheng); Zhang, YY (Zhang, Yiyun); Li, X (Li, Xiao); Liu, ZQ (Liu, Zhiqiang);
Guo, EQ (Guo, Enqing); Yi, XY (Yi, Xiaoyan); Wang, JX (Wang, Junxi); Zhu, HW (Zhu, Hongwei);
Wang, GH (Wang, Guohong)
来源出版物: JOURNAL OF PHYSICS D-APPLIED PHYSICS 卷: 45 期: 50 文献号: 505102 DOI:
10.1088/0022-3727/45/50/505102 出版年: DEC 19 2012
摘要: A normalized circular transmission line method pattern with uniform interface area was
developed to obtain contact resistances of p-, u-, n-GaN/graphene contacts (p, u and n represent
p-type doped, unintentionally doped and n-type doped, respectively) and N-polar u-,
n-GaN/graphene contacts in GaN-based LEDs. The resistances of the graphene/GaN contacts
were mainly determined by the work function gap and the carrier concentration in GaN.
Annealing caused diffusion of metal atoms and significantly influenced the interface transport
properties.
语种: English
文献类型: Article
地址: [Wang, Liancheng; Zhang, Yiyun; Liu, Zhiqiang; Guo, Enqing; Yi, Xiaoyan; Wang, Junxi; Wang,
Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing
100083, Peoples R China.
[Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Key Lab Adv Mfg Mat Proc Technol, Dept Mech Engn,
Beijing 100084, Peoples R China.
[Zhu, Hongwei] Tsinghua Univ, CNMM, Beijing 100084, Peoples R China.
通讯作者地址: Zhu, HW (通讯作者),Tsinghua Univ, Key Lab Adv Mfg Mat Proc Technol, Dept
Mech Engn, Beijing 100084, Peoples R China.
电子邮件地址: hongweizhu@tsinghua.edu.cn
ISSN: 0022-3727
基金资助致谢:
基金资助机构 授权号
National High Technology Program of China 2011AA03A105
2011AA03A103
National Natural Science Foundation of China 60806001
50972067
National Basic Research Program of China 2011CB301904
2011CB013000
This work was supported by the National High Technology Program of China (2011AA03A105 and
2011AA03A103), the National Natural Science Foundation of China (60806001 and 50972067),
the National Basic Research Program of China (2011CB301904 and 2011CB013000).
-------------------------------------------------------------------------------第 196 条，共 234 条
标题: Coupling coefficient calculation for GaSb-based quantum well distributed feedback lasers
with laterally coupled gratings
作者: Wang, YB (Wang, Y. B.); Xu, Y (Xu, Y.); Zhang, Y (Zhang, Y.); Song, GF (Song, G. F.); Chen, LH
(Chen, L. H.)
来源出版物: JOURNAL OF PHYSICS D-APPLIED PHYSICS 卷: 45 期: 50 文献号: 505109 DOI:
10.1088/0022-3727/45/50/505109 出版年: DEC 19 2012
摘要: We calculated the coupling coefficient of different types of laterally coupled distributed
feedback (LC-DFB) structures with coupled-wave theory and the two-dimensional semivectorial
finite difference method. Effects neglected in previous studies such as other partial waves, the
ohmic contact and metal contact layers are taken into account in this calculation. The LC-DFB
structure with metal gratings is especially studied due to its advantage over index-coupled
structures. The dependence of coupling coefficient on structure parameters is theoretically
calculated such as grating order, ridge width, thickness of the residual cladding layer, grating
depth and lateral proximity of gratings to the ridge waveguide. A complex-coupled GaSb-based 2
mu m LC-DFB structure is optimized to achieve a high coupling coefficient of 14.5 cm(-1).
语种: English
文献类型: Article
KeyWords Plus: FINITE-DIFFERENCE METHOD; DFB LASERS; WAVE-GUIDES; LOW-THRESHOLD;
RIDGE LASER; MU-M; DIODE; HETEROSTRUCTURE; OPERATION
地址: [Wang, Y. B.; Xu, Y.; Zhang, Y.; Song, G. F.; Chen, L. H.] Chinese Acad Sci, Inst Semicond, Lab
Nanooptoelect, Beijing 100083, Peoples R China.
通讯作者地址: Wang, YB (通讯作者),Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect,
Beijing 100083, Peoples R China.
电子邮件地址: xuyun@semi.ac.cn
ISSN: 0022-3727
基金资助致谢:
基金资助机构 授权号
Beijing Natural Science Foundation 4112058
This work was supported by the Beijing Natural Science Foundation under Grant No 4112058
(Study of material growth and grating fabrication of GaSb-based distributed feedback laser diode
for ultra-high sensitivity gas sensing).
-------------------------------------------------------------------------------第 197 条，共 234 条
标题: Carriers capturing of V-defect and its effect on leakage current and electroluminescence in
InGaN-based light-emitting diodes
作者: Le, LC (Le, L. C.); Zhao, DG (Zhao, D. G.); Jiang, DS (Jiang, D. S.); Li, L (Li, L.); Wu, LL (Wu, L. L.);
Chen, P (Chen, P.); Liu, ZS (Liu, Z. S.); Li, ZC (Li, Z. C.); Fan, YM (Fan, Y. M.); Zhu, JJ (Zhu, J. J.); Wang,
H (Wang, H.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 101 期 : 25 文 献 号 : 252110 DOI:
10.1063/1.4772548 出版年: DEC 17 2012
摘 要 : The effect of quantum well (QW) number on performances of InGaN/GaN
multiple-quantum-well light-emitting diodes has been investigated. It is observed that V-defects,
originated from various InGaN well layers intercepted by threading dislocations (TDs), increase in
density and averaged size with more periods of QWs, resulting in larger reverse-bias leakage
current and lower emission efficiency of light-emitting diodes. Conductive atomic force
microscopy measurements demonstrate that V-defects may preferentially capture carriers,
subsequently enhance local current and nonradiative recombinations at associated TD lines,
which suggest that TD lines with V-defects at vertex have larger influence on emission efficiency
than
those
without
V-defects.
(C)
2012
American
Institute
of
Physics.
[http://dx.doi.org/10.1063/1.4772548]
语种: English
文献类型: Article
KeyWords Plus: MULTIPLE-QUANTUM WELLS; PIT FORMATION; GREEN; GAN; ORIGIN; BLUE
地址: [Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, H.] Chinese Acad
Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
[Li, Z. C.; Fan, Y. M.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H.] Chinese Acad Sci, Suzhou Inst
Nanotech & Nanobion, Suzhou 215125, Peoples R China.
通讯作者地址: Le, LC (通讯作者),Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst
Semicond, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: dgzhao@red.semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholars 60925017
National Natural Science Foundation of China 10990100
60836003
60976045
61176126
Tsinghua National Laboratory for Information Science and Technology (TNList) Cross-discipline
Foundation
The authors acknowledge the support from the National Science Fund for Distinguished Young
Scholars (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos.
10990100, 60836003, 60976045, and 61176126), and Tsinghua National Laboratory for
Information Science and Technology (TNList) Cross-discipline Foundation.
-------------------------------------------------------------------------------第 198 条，共 234 条
标题: Topological insulator-graphene junction for spin transport
作者: Li, H (Li, H.); Zhang, HB (Zhang, H. B.); Shao, JM (Shao, J. M.); Zhang, YY (Zhang, Y. Y.); Yao,
DX (Yao, D. X.); Yang, GW (Yang, G. W.)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 101 期 : 24 文 献 号 : 243102 DOI:
10.1063/1.4769813 出版年: DEC 10 2012
摘要: Considering that the strong spin-orbit interaction of a topological insulator (TI) makes it
possible to generate large spin polarization and that graphene with weak spin-orbit coupling can
transmit spin information over large distances, we propose a topological insulator-graphene
junction (TIG) for spin and charge transport. We find that the TI in the TIG can inject a finite
electrically induced net spin current into the graphene without any of the conditions necessary in
traditional spin-generation devices. The magnitude of the spin current can be tuned with an
applied bias voltage. These findings are useful for developing spintronics. (C) 2012 American
Institute of Physics. [http://dx.doi.org/10.1063/1.4769813]
语种: English
文献类型: Article
KeyWords Plus: SINGLE DIRAC CONE; SURFACE; BI2TE3; BI2SE3
地址: [Li, H.; Zhang, H. B.; Shao, J. M.; Yao, D. X.; Yang, G. W.] Sun Yat Sen Univ, State Key Lab
Optoelect Mat & Technol, Inst Optoelect & Funct Composite Mat, Nanotechnol Res Ctr,Sch Phys &
Engn, Guangzhou 510275, Guangdong, Peoples R China.
[Zhang, Y. Y.] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing
100083, Peoples R China.
通讯作者地址: Yao, DX (通讯作者),Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Inst
Optoelect & Funct Composite Mat, Nanotechnol Res Ctr,Sch Phys & Engn, Guangzhou 510275,
Guangdong, Peoples R China.
电子邮件地址: yaodaox@mail.sysu.edu.cn; stsygw@mail.sysu.edu.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China U0734004
Ministry of Education
This work is supported by the National Natural Science Foundation of China (U0734004) and the
Ministry of Education.
-------------------------------------------------------------------------------第 199 条，共 234 条
标题: Room temperature direct-bandgap electroluminescence from n-type strain-compensated
Ge/SiGe multiple quantum wells
作者: Liu, Z (Liu, Zhi); Hu, WX (Hu, Weixuan); Li, C (Li, Chong); Li, YM (Li, Yaming); Xue, CL (Xue,
Chunlai); Li, CB (Li, Chuanbo); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen); Wang, QM
(Wang, Qiming)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 101 期 : 23 文 献 号 : 231108 DOI:
10.1063/1.4769834 出版年: DEC 3 2012
摘要: N-type strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells (MQWs) were grown
on a Si0.1Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition on a
n(+)-Si(001) substrate. Under low forward bias voltage ranging from 0.6 to 1.2 V, narrow
direct-bandgap electroluminescence (EL) peak from MQWs light emitting diode was observed at
room temperature. The quantum confinement effect of the direct-bandgap transitions and the
temperature dependent EL peak redshift are in good agreement with the calculated results. (C)
2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769834]
语种: English
文献类型: Article
KeyWords Plus: LIGHT-EMITTING-DIODES; GE; SI; SILICON; GAIN; GAP
地址: [Liu, Zhi; Hu, Weixuan; Li, Chong; Li, Yaming; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng,
Buwen; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect,
Beijing 100083, Peoples R China.
通讯作者地址: Cheng, BW (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: cbw@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61036003
61176013
60906035
61177038
Major State Basic Research Development Program of China 2013CB632103
This work was supported by National Natural Science Foundation of China (Grant Nos. 61036003,
61176013, 60906035, and 61177038) and the Major State Basic Research Development Program
of China (Grant 2013CB632103).
-------------------------------------------------------------------------------第 200 条，共 234 条
标 题 : Structural and optoelectronic properties of selenium-doped silicon formed using
picosecond pulsed laser mixing
作者: Hu, SX (Hu, Shaoxu); Han, PD (Han, Peide); Wang, S (Wang, Shuai); Mao, X (Mao, Xue); Li,
XY (Li, Xinyi); Gao, LP (Gao, Lipeng)
来源出版物: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 卷: 209 期:
12 页: 2521-2526 DOI: 10.1002/pssa.201228202 出版年: DEC 2012
摘要: Microstructured silicon doped with selenium beyond the equilibrium solid solubility limit
was formed by picosecond pulsed laser mixing of a 20-nm Se film with the underlying p-Si wafer.
The effects of pulse fluence varying from 0.40 to 0.72 J cm(-2) on the structural and electronic
properties of this material were investigated. It was found that the surface roughness in the
laser-irradiated regions increases with increasing pulse fluence, and a phase transition from the
crystalline to the amorphous occurs at a pulse fluence of 0.72 J cm(-2). Silicon microstructures
were doped with selenium of the order of 10(18) cm(-3) within a depth of 100 nm below the
surface, and n(+)p junctions were formed between the Se-doped layers and the silicon substrates.
The current-voltage as well as spectral response characteristics of the photodiodes fabricated
from microstructured silicon were also analyzed and discussed. The leakage currents and
responsivities of these photodiodes strongly depend on the pulse fluence, presumably due to the
effects of picosecond laser modification on the crystal structure and electronic structure of the
surface Se-doped layers. (C) 2012 WILEY- VCH Verlag GmbH & Co. KGaA, Weinheim
语种: English
文献类型: Article
作 者 关键 词 : optoelectronic properties; pulsed laser irradiation; selenium film; structural
characterization
KeyWords Plus: MICROSTRUCTURED SILICON; FEMTOSECOND; ABSORPTION; SULFUR; FILM
地址: [Hu, Shaoxu; Han, Peide; Wang, Shuai; Mao, Xue; Li, Xinyi; Gao, Lipeng] Chinese Acad Sci,
Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Han, PD (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, A35 QingHua E Rd, Beijing 100083, Peoples R China.
电子邮件地址: pdhan@semi.ac.cn
ISSN: 1862-6300
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60976046
60837001
61021003
National Basic Research Program of China 2012CB934204
This work was financially supported by the National Natural Science Foundation of China under
grant nos. 60976046, 60837001, and 61021003, and by the National Basic Research Program of
China under grant no. 2012CB934204. The authors would like to thank Dr. Y. Huang for technical
assistance, and Dr. L. Li for the AFM measurements.
-------------------------------------------------------------------------------第 201 条，共 234 条
标题: Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by
Rutherford backscattering/channeling
作者: Zhou, SQ (Zhou, Shengqiang); Chen, L (Chen, Lin); Shalimov, A (Shalimov, Artem); Zhao, JH
(Zhao, Jianhua); Helm, M (Helm, Manfred)
来源出版物: AIP ADVANCES 卷: 2 期: 4 文献号: 042102 DOI: 10.1063/1.4757917 出版
年: DEC 2012
摘要: We provide a direct measurement of the tetragonal distortion in thick GaMnAs as a
function of depth by Rutherford backscattering combining with channeling. The thick GaMnAs
film is tetragonally strained and the tetragonal distortion is found to be depth independent. Our
finding excludes strain relaxation as the origin of the uniaxial in-plane magnetic anisotropy
observed in GaMnAs. Copyright 2012 Author(s). This article is distributed under a Creative
Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4757917]
语种: English
文献类型: Article
KeyWords Plus: MAGNETIC-ANISOTROPY; (GA,MN)AS
地址: [Zhou, Shengqiang; Shalimov, Artem; Helm, Manfred] HZDR, Inst Ion Beam Phys & Mat Res,
D-01314 Dresden, Germany.
[Chen, Lin; Zhao, Jianhua] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst
Semicond, Beijing 100080, Peoples R China.
[Helm, Manfred] Tech Univ Dresden, D-01062 Dresden, Germany.
通讯作者地址: Zhou, SQ (通讯作者),HZDR, Inst Ion Beam Phys & Mat Res, POB 510119, D-01314
Dresden, Germany.
电子邮件地址: s.zhou@hzdr.de
ISSN: 2158-3226
基金资助致谢:
基金资助机构 授权号
Helmholtz-Gemeinschaft Deutscher Forschungszentren HGF-VH-NG-713
National Natural Science Foundation of China 60836002
S. Zhou acknowledges funding by the Helmholtz-Gemeinschaft Deutscher Forschungszentren
(HGF-VH-NG-713). The work is partially supported by the National Natural Science Foundation of
China under Grants 60836002.
-------------------------------------------------------------------------------第 202 条，共 234 条
标题: Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper
waveguide layer
作者: Chen, P (Chen, P.); Feng, MX (Feng, M. X.); Jiang, DS (Jiang, D. S.); Zhao, DG (Zhao, D. G.);
Liu, ZS (Liu, Z. S.); Li, L (Li, L.); Wu, LL (Wu, L. L.); Le, LC (Le, L. C.); Zhu, JJ (Zhu, J. J.); Wang, H
(Wang, H.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 112 期: 11 文献号: 113105 DOI:
10.1063/1.4768287 出版年: DEC 1 2012
摘要: In the structure of conventional InGaN-based laser diodes, considerable optical absorption
loss exists in the p-doped region, especially in the p-doped upper waveguide layer. A structure of
InGaN-based laser diodes with an undoped InGaN upper waveguide layer instead of p-doped GaN
was designed and optimized. Instead of being located between AlGaN EBL and AlGaN cladding
layer, the undoped InGaN layer was positioned between the AlGaN electron blocking layer and
the active region of multi-quantum well. The optical and electrical characteristics of this type of
laser diodes were simulated by the commercial software LASTIP, and it was found that the optical
absorption loss was obviously lowered. Further theoretical analysis showed that the undoped
InGaN upper waveguide layer eliminated the influence of electron leakage current, leading to a
reduction of threshold current density and an increase of output light power of the InGaN-based
laser diodes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768287]
语种: English
文献类型: Article
KeyWords Plus: LIGHT-EMITTING-DIODES; WELL LASERS
地址: [Chen, P.; Feng, M. X.; Jiang, D. S.; Zhao, D. G.; Liu, Z. S.; Li, L.; Wu, L. L.; Le, L. C.] Chinese
Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
[Feng, M. X.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H.] Chinese Acad Sci, Key Lab Nanodevices &
Applicat CAS, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.
通讯作者地址: Zhao, DG (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: dgzhao@red.semi.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholars 60925017
National Natural Science Foundation of China 10990100
60836003
60976045
61176126
Tsinghua National Laboratory for Information Science and Technology (TNList) Cross-discipline
Foundation
The authors acknowledge the support from the National Science Fund for Distinguished Young
Scholars (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos.
10990100, 60836003, 60976045, and 61176126), and Tsinghua National Laboratory for
Information Science and Technology (TNList) Cross-discipline Foundation.
-------------------------------------------------------------------------------第 203 条，共 234 条
标题: Calculation of discrepancies in measured valence band offsets of heterojunctions with
different crystal polarities
作者: Li, HJ (Li, Huijie); Liu, XL (Liu, Xianglin); Wang, JX (Wang, Jianxia); Jin, DD (Jin, Dongdong);
Zhang, H (Zhang, Heng); Yang, SY (Yang, Shaoyan); Liu, SM (Liu, Shuman); Mao, W (Mao, Wei);
Hao, Y (Hao, Yue); Zhu, QS (Zhu, QinSheng); Wang, ZG (Wang, Zhanguo)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 112 期: 11 文献号: 113712 DOI:
10.1063/1.4768707 出版年: DEC 1 2012
摘要: The discrepancies in measured valence band offsets (VBOs) of wurtzite III-nitride and
II-oxide heterojunctions with different crystal polarities are investigated. The uncertainties of
measured VBOs are mainly attributed to the polarization-induced interface charges. Based on the
self-consist calculation, we could obtain the discrepancies in VBOs of heterojunctions with
different crystal orientations. Mixed polarity has also been considered to explain the differences
in the measured VBOs of heterojunctions with the same crystal orientation. (C) 2012 American
Institute of Physics. [http://dx.doi.org/10.1063/1.4768707]
语种: English
文献类型: Article
KeyWords Plus: RAY PHOTOEMISSION SPECTROSCOPY; PIEZOELECTRIC CONSTANTS; PRECISE
DETERMINATION; ELASTIC-CONSTANTS; QUANTUM-WELL; POLARIZATION; GAN; ALN;
HETEROSTRUCTURES; DISCONTINUITY
地址: [Li, Huijie; Liu, Xianglin; Wang, Jianxia; Jin, Dongdong; Zhang, Heng; Yang, Shaoyan; Liu,
Shuman; Zhu, QinSheng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond
Mat Sci, Beijing 100083, Peoples R China.
[Mao, Wei; Hao, Yue] Xidian Univ, State Key Discipline Lab Wide Band Gap Semicond T, Xian
710071, Peoples R China.
通讯作者地址: Li, HJ (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
POB 912, Beijing 100083, Peoples R China.
电子邮件地址: hjli2009@semi.ac.cn; xlliu@red.semi.ac.cn; qszhu@semi.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
National Science Foundation of China 60976008
61006004
61076001
10979507
50990064
Special Funds for Major State Basic Research Project (973 program) of China A000091109-05
863 High Technology R&D Program of China 2011AA03A101
This work was supported by National Science Foundation of China (Nos. 60976008, 61006004,
61076001, 10979507, and 50990064), the Special Funds for Major State Basic Research Project
(973 program) of China (No. A000091109-05), and the 863 High Technology R&D Program of
China (No. 2011AA03A101).
-------------------------------------------------------------------------------第 204 条，共 234 条
标题: The impact of the stress induced by lateral spatial hole burning on the degradation of
broad-area AlGaAs/GaAs laser diodes
作者: Qiao, YB (Qiao, Yanbin); Feng, SW (Feng, Shiwei); Xiong, C (Xiong, Cong); Ma, XY (Ma,
Xiaoyu); Zhu, H (Zhu, Hui); Guo, CS (Guo, Chunsheng); Wei, GH (Wei, Guanghua)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 112 期: 11 文献号: 113104 DOI:
10.1063/1.4768194 出版年: DEC 1 2012
摘要: The degradation of broad-area AlGaAs/GaAs laser diodes is studied experimentally and
theoretically in detail, and we suggest a degradation mechanism associated with the stress which
originates from the lateral spatial hole burning (SHB) effects. Our analysis shows that thermal
stresses have critical effects on the degradation of laser diodes, which are induced by increased
local heating by nonradiative recombination and self-absorption of photons originating from the
lateral SHB within the laser diode during degradation. Such results are confirmed by the
simulation using the software LASTIP. Furthermore, the average values of the induced thermal
strain and stress by lateral SHB are 0.00063 and 85 MPa, respectively, through the x-ray
diffraction measurement. The stress exceeds that for the initiation of plastic deformation (as
calculated to be approximately 40-50 MPa based on the finite element method), thus, suggesting
that plastic deformation has occurred within the cavity due to the lateral SHB effect during
degradation
of
laser
diodes.
(C)
2012
American
Institute
of
Physics.
[http://dx.doi.org/10.1063/1.4768194]
语种: English
文献类型: Article
KeyWords Plus: SEMICONDUCTOR-LASER; OPERATION; FACETS; AMPLIFIERS; FILAMENTS; MW
地址: [Qiao, Yanbin; Feng, Shiwei; Xiong, Cong; Zhu, Hui; Guo, Chunsheng; Wei, Guanghua]
Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China.
[Ma, Xiaoyu] Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing
100083, Peoples R China.
通讯作者地址: Feng, SW (通讯作者),Beijing Univ Technol, Sch Elect Informat & Control Engn,
Beijing, Peoples R China.
电子邮件地址: shwfeng@bjut.edu.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
High-tech Research and Development Program of China (863 Program) 2009AA032704
Beijing Natural Science Foundation, China 4122005
Doctoral Innovation Foundation of Beijing University of Technology YB201205
This work was financially supported by the High-tech Research and Development Program of
China (863 Program) under Grant No. 2009AA032704; the Beijing Natural Science Foundation,
China under Grant No. 4122005; and the Doctoral Innovation Foundation of Beijing University of
Technology under Grant No. YB201205.
-------------------------------------------------------------------------------第 205 条，共 234 条
标题: Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS)
Sensor Application
作者: Shi, YB (Shi, Yunbo); Guo, H (Guo, Hao); Ni, HQ (Ni, Haiqiao); Xue, CY (Xue, Chenyang); Niu,
ZC (Niu, Zhichuan); Tang, J (Tang, Jun); Liu, J (Liu, Jun); Zhang, WD (Zhang, Wendong); He, JF (He,
Jifang); Li, MF (Li, Mifeng); Yu, Y (Yu, Ying)
来源出版物: MATERIALS 卷: 5 期: 12 页: 2917-2926
DEC 2012
DOI: 10.3390/ma5122917
出版年:
摘要: Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on
GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS
sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based
on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching
superlattice and strain superlattice were used, and the surface defect density can be improved by
two orders of magnitude. Combing with the Raman spectrum, the residual stress was
characterized, and it can be concluded from the experimental results that the residual stress can
be reduced by 50%, in comparison with the original substrate. This method gives us a solution to
optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of
integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications.
语种: English
文献类型: Article
作者关键词: residual stress; GaAs-on-Si; MEMS sensors
KeyWords Plus: MOLECULAR-BEAM EPITAXY; DISLOCATION DENSITY REDUCTION;
STRAINED-LAYER SUPERLATTICES; RESONANT-TUNNELING DIODES; RAMAN-SCATTERING;
THIN-FILMS; SILICON; DEFECTS; GROWTH
地址: [Shi, Yunbo; Guo, Hao; Xue, Chenyang; Tang, Jun; Liu, Jun] Minist Educ, Key Lab
Instrumentat Sci & Dynam Measurement, Taiyuan 030051, Shanxi, Peoples R China.
[Ni, Haiqiao; Niu, Zhichuan; Zhang, Wendong; He, Jifang; Li, Mifeng; Yu, Ying] Chinese Acad Sci,
Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
[Shi, Yunbo] Beijing Inst Technol, Sch Mechatron Engn, Beijing 100081, Peoples R China.
通讯作者地址: Liu, J (通讯作者),Minist Educ, Key Lab Instrumentat Sci & Dynam Measurement,
Taiyuan 030051, Shanxi, Peoples R China.
电 子 邮 件 地 址 : shiyunbo@nuc.edu.cn; guohaonuc@163.com; nihq@semi.ac.cn;
xuechenyang@nuc.edu.cn;
zhniu@semi.ac.cn;
tangjun@nuc.edu.cn;
liuj@nuc.edu.cn;
wdzhang@nuc.edu.cn; hejifang@semi.ac.cn; limifeng@semi.ac.cn; yuying@semi.ac.cn
ISSN: 1996-1944
基金资助致谢:
基金资助机构 授权号
National Science Foundation of China 61171056
China Postdoctoral Science Foundation 2011M500544
Foundation of Key Laboratory 9140C1204021008
National Basic Research Program (973 Program) 2010CB327601
We acknowledge support from the National Science Foundation of China, funded (61171056), the
China Postdoctoral Science Foundation (2011M500544), the Foundation of Key Laboratory
(9140C1204021008) and National Basic Research Program (973 Program, under grant:
2010CB327601).
-------------------------------------------------------------------------------第 206 条，共 234 条
标题: A scanning tunneling microscope capable of imaging specified micron-scale small samples
作者: Tao, W (Tao, Wei); Cao, YF (Cao, Yufei); Wang, HF (Wang, Huafeng); Wang, KY (Wang,
Kaiyou); Lu, QY (Lu, Qingyou)
来源出版物: REVIEW OF SCIENTIFIC INSTRUMENTS 卷: 83 期: 12 文献号: 123701 DOI:
10.1063/1.4769047 出版年: DEC 2012
摘要: We present a home-built scanning tunneling microscope (STM) which allows us to precisely
position the tip on any specified small sample or sample feature of micron scale. The core
structure is a stand-alone soft junction mechanical loop (SJML), in which a small piezoelectric
tube scanner is mounted on a sliding piece and a "U"-like soft spring strip has its one end fixed to
the sliding piece and its opposite end holding the tip pointing to the sample on the scanner. Here,
the tip can be precisely aligned to a specified small sample of micron scale by adjusting the
position of the spring-clamped sample on the scanner in the field of view of an optical
microscope. The aligned SJML can be transferred to a piezoelectric inertial motor for coarse
approach, during which the U-spring is pushed towards the sample, causing the tip to approach
the pre-aligned small sample. We have successfully approached a hand cut tip that was made
from 0.1 mm thin Pt/Ir wire to an isolated individual 32.5 x 32.5 mu m(2) graphite flake. Good
atomic resolution images and high quality tunneling current spectra for that specified tiny flake
are obtained in ambient conditions with high repeatability within one month showing high and
long term stability of the new STM structure. In addition, frequency spectra of the tunneling
current signals do not show outstanding tip mount related resonant frequency (low frequency),
which further confirms the stability of the STM structure. (C) 2012 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4769047]
语种: English
文献类型: Article
KeyWords Plus: ELECTRON-MICROSCOPE; JUNCTIONS; MAGNETORESISTANCE; CONDUCTANCE;
GRAPHENE; SYSTEM; GAP
地址: [Tao, Wei; Lu, Qingyou] Chinese Acad Sci, High Field Magnet Lab, Hefei 230026, Anhui,
Peoples R China.
[Tao, Wei; Lu, Qingyou] Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China.
[Tao, Wei; Lu, Qingyou] Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China.
[Cao, Yufei; Wang, Huafeng; Wang, Kaiyou] Chinese Acad Sci, Inst Semicond, State Key Lab
Superlattices & Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Lu, QY (通讯作者),Chinese Acad Sci, High Field Magnet Lab, Hefei 230026, Anhui,
Peoples R China.
电子邮件地址: qxl@ustc.edu.cn
ISSN: 0034-6748
基金资助致谢:
基金资助机构 授权号
Chinese national high magnetic field facilities and fundamental research funds for the central
universities WK2340000035
This work was supported by the project of Chinese national high magnetic field facilities and
fundamental research funds for the central universities (Program No. WK2340000035).
-------------------------------------------------------------------------------第 207 条，共 234 条
标题: A Method of Adjusting Wavelengths of Distributed Feedback Laser Arrays by Injection
Current Tuning
作者: Hou, J (Hou, Jie); Chen, XF (Chen, Xiangfei); Wang, LX (Wang, Lixian); Chen, W (Chen, Wei);
Zhu, NH (Zhu, Ninghua)
来 源 出 版 物 : IEEE PHOTONICS JOURNAL
卷: 4
期: 6
页 : 2189-2195
DOI:
10.1109/JPHOT.2012.2228183 出版年: DEC 2012
摘要: The relation between the output wavelengths of a laser array and the injection currents of
all the channels is experimentally investigated and is found to be approximately linear. Based on
this, the authors propose an optimization method of adjusting the wavelength distribution of the
laser array by tuning the injection currents. In the proof-of-concept experiment, the linear
wavelength residual is significantly reduced.
语种: English
文献类型: Article
作者关键词: Laser array; thermal crosstalk; DFB laser array; wavelength distribution
KeyWords Plus: THERMAL CROSSTALK; OPERATION
地址: [Hou, Jie; Wang, Lixian; Chen, Wei; Zhu, Ninghua] Chinese Acad Sci, Inst Semicond, State
Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
[Chen, Xiangfei] Nanjing Univ, Nanjing Natl Lab Microstruct, Microwavephoton Technol Lab,
Nanjing 210093, Peoples R China.
[Chen, Xiangfei] Nanjing Univ, Sch Engn & Appl Sci, Nanjing 210093, Peoples R China.
通讯作者地址: Zhu, NH (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: nhzhu@semi.ac.cn
ISSN: 1943-0655
基金资助致谢:
基金资助机构 授权号
National "863" project Y18b011001
National Nature Science Foundation of China Y111010000
Y218090000
Manuscript received September 25, 2012; revised October 30, 2012; accepted November 11,
2012. Date of publication November 20, 2012; date of current version November 30, 2012. This
work was supported in part by the National "863" project under Grand Y18b011001 and in part
by the National Nature Science Foundation of China under Grants Y111010000 and Y218090000.
Corresponding author: N. Zhu (e-mail: nhzhu@semi.ac.cn).
-------------------------------------------------------------------------------第 208 条，共 234 条
标题: A Universal Method for Constructing N-Port Nonblocking Optical Router for Photonic
Networks-On-Chip
作者: Min, R (Min, Rui); Ji, RQ (Ji, Ruiqiang); Chen, QS (Chen, Qiaoshan); Zhang, L (Zhang, Lei);
Yang, L (Yang, Lin)
来源出版物: JOURNAL OF LIGHTWAVE TECHNOLOGY 卷: 30 期: 23 页: 3736-3741 DOI:
10.1109/JLT.2012.2227945 出版年: DEC 1 2012
摘要: We propose a universal method for constructing N-port nonblocking optical routers based
on microring resonators. The topologies for five-, six-, seven-, and eight-port nonblocking optical
routers are presented. As a case study, we compare the five-port optical router constructed by
our method with the previously reported ones. The simulation results show that the mesh
photonic network constructed by the proposed five-port optical routers has low insertion loss
and high optical signal-to-noise ratio. Moreover, high-radix optical routers can be easily
constructed by the proposed method, which can support more complicated and efficient
network.
语种: English
文献类型: Article
作者关键词: Silicon photonics; optical router; microring; networks-on-chip
KeyWords Plus: SWITCH
地址: [Min, Rui; Ji, Ruiqiang; Chen, Qiaoshan; Zhang, Lei; Yang, Lin] Chinese Acad Sci, Inst
Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Min, R (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : minrui@semi.ac.cn; jiruiqiang@semi.ac.cn; chenqs@semi.ac.cn;
zhanglei@semi.ac.cn
ISSN: 0733-8724
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60977037
National High Technology Research and Development Program of China 2009AA03Z416
Manuscript received July 23, 2012; revised September 23, 2012, October 27, 2012; accepted
October 30, 2012. Date of publication November 15, 2012; date of current version December 11,
2012. This work was supported by the National Natural Science Foundation of China under Grant
60977037, and by the National High Technology Research and Development Program of China
under Grant 2009AA03Z416.
-------------------------------------------------------------------------------第 209 条，共 234 条
标题: Conductance modulation of Si nanowire arrays
作者: Li, CB (Li, Chuanbo); Krali, E (Krali, Emiljana); Fobelets, K (Fobelets, Kristel); Cheng, BW
(Cheng, Buwen); Wang, QM (Wang, Qiming)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 101 期 : 22 文 献 号 : 222101 DOI:
10.1063/1.4768692 出版年: NOV 26 2012
摘要: The conductance modulation of vertically aligned Si nanowire arrays with ammonia is
investigated. Ammonia adsorption on the surface of the nanowires (NWs) in the array greatly
increases the electrical conductivity of n-type NWs. This effect can be potentially applied to boost
figure of merit for thermoelectric applications by combining the phonon confinement effect of
NWs with the electrical conductivity increase. By using 1/f noise measurements, the mechanism
of conduction modulation is investigated. The enhancement of the electrical conduction is
interpreted in terms of electron trap filling of the native oxide via ammonia adsorption. (C) 2012
American Institute of Physics. [http://dx.doi.org/10.1063/1.4768692]
语种: English
文献类型: Article
KeyWords Plus: FIELD-EFFECT TRANSISTORS; SILICON NANOWIRES; DENSITY; FABRICATION;
SURFACE; UNIFORM
地址: [Li, Chuanbo; Krali, Emiljana; Fobelets, Kristel] Univ London Imperial Coll Sci Technol & Med,
Dept Elect & Elect Engn, London SW7 2AZ, England.
[Li, Chuanbo; Cheng, Buwen; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab
Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Li, CB (通讯作者),Univ London Imperial Coll Sci Technol & Med, Dept Elect &
Elect Engn, Exhibit Rd, London SW7 2AZ, England.
电子邮件地址: cbli@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
e-on International Research Initiative project
The authors thank M. Green, Z. A. K. Durrani, and M. M. Ahmad for discussions. This work was
supported by the e-on International Research Initiative project.
-------------------------------------------------------------------------------第 210 条，共 234 条
标题: Modulation of external electric field on surface states of topological insulator Bi2Se3 thin
films
作者: Liu, GH (Liu, Genhua); Zhou, GH (Zhou, Guanghui); Chen, YH (Chen, Yong-Hai)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 101 期 : 22 文 献 号 : 223109 DOI:
10.1063/1.4767998 出版年: NOV 26 2012
摘要: We study theoretically surface band structure and topological phase transition for Bi2Se3
thin films under an external electric field. It is demonstrated that an electric field vertical to the
film surface can close or reopen a gap for surface states. We also study the spin-dependent
transport property through an interface junction between regions without and with electric field
on the film. Interestingly, the opacity and transparency of spin-down Dirac fermions through the
junction can be modulated by changing the incident angle and the electric field strength. On the
contrary, the spin-up Dirac fermions always penetrate through the junction. (C) 2012 American
Institute of Physics. [http://dx.doi.org/10.1063/1.4767998]
语种: English
文献类型: Article
KeyWords Plus: SINGLE DIRAC CONE
地址: [Liu, Genhua] Cent S Univ Forestry & Technol, Coll Comp & Informat Engn, Changsha
410004, Hunan, Peoples R China.
[Liu, Genhua; Zhou, Guanghui] Hunan Normal Univ, Minist Educ, Dept Phys, Changsha 410081,
Hunan, Peoples R China.
[Liu, Genhua; Zhou, Guanghui] Hunan Normal Univ, Minist Educ, Key Lab Low Dimens Quantum
Struct & Manipulat, Changsha 410081, Hunan, Peoples R China.
[Chen, Yong-Hai] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083,
Peoples R China.
通讯作者地址: Liu, GH (通讯作者),Cent S Univ Forestry & Technol, Coll Comp & Informat Engn,
Changsha 410004, Hunan, Peoples R China.
电子邮件地址: liugenhua@semi.ac.cn; ghzhou@hunnu.edu.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 11274108
11147187
Open Subject of Institute of Semiconductors, Chinese Academy of Science KLSMS-1008
This work was supported by the National Natural Science Foundation of China (Grant Nos.
11274108 and 11147187), and the Open Subject of Institute of Semiconductors, Chinese
Academy of Science (Grant No. KLSMS-1008).
-------------------------------------------------------------------------------第 211 条，共 234 条
标题: Tunable Dirac cone in the rectangular symmetrical semiconductor quantum dots array
作者: Peng, J (Peng, Juan); Fu, ZG (Fu, Zhen-Guo); Li, SS (Li, Shu-Shen)
来 源 出 版 物 : APPLIED PHYSICS LETTERS 卷 : 101 期 : 22 文 献 号 : 222108 DOI:
10.1063/1.4768939 出版年: NOV 26 2012
摘要: We studied the electronic properties of a two-dimensional (2D) rectangular symmetrical
semiconductor quantum dots (QD) lattice and found a type of tunable Dirac cone structure in its
energy spectrum by using tight-binding method. We show that, by tuning the parameters of the
QD lattice, the energy gap could be closed and form the Dirac cone. A phase diagram of transition
from the gap opening to the gapless state is also obtained. Furthermore, we found the Dirac cone
is anisotropic, implying direction-dependent electronic properties and conductivities. These
findings may be useful for the development and application of high-speed semiconductor QD
devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768939]
语种: English
文献类型: Article
KeyWords Plus: TOPOLOGICAL INSULATORS; GRAPHENE; TEMPLATE; GAAS
地址: [Peng, Juan; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, Beijing 100083, Peoples R China.
[Fu, Zhen-Guo] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.
[Fu, Zhen-Guo] Inst Appl Phys & Computat Math, LCP, Beijing 100088, Peoples R China.
通讯作者地址: Peng, J (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: pengjuan@semi.ac.cn
ISSN: 0003-6951
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China (973 Program) G2009CB929300
National Natural Science Foundation of China 61121491
This work was supported by the National Basic Research Program of China (973 Program) Grant
No. G2009CB929300 and the National Natural Science Foundation of China under Grant No.
61121491. We thank Peijian Chen and Feng Chi for very helpful inspirations and discussions.
-------------------------------------------------------------------------------第 212 条，共 234 条
标题: Synthesis of single-walled carbon nanotubes from heavy oil residue
作者: Li, YF (Li, Yongfeng); Wang, HF (Wang, Huafeng); Wang, G (Wang, Gang); Gao, JS (Gao,
Jinsen)
来 源 出 版 物 : CHEMICAL ENGINEERING JOURNAL
卷 : 211
页 : 255-259
DOI:
10.1016/j.cej.2012.09.031 出版年: NOV 15 2012
摘要: Single-walled carbon nanotubes (SWNTs) were synthesized by a chemical vapor deposition
(CVD) method using heavy oil residue as carbon source. Different kinds of metals as catalysts
including transition metals (Fe, Co and Ni) and nonmagnetic metals (Au and Pt) are used in the
growth of SWNTs. The morphology and structure of the synthesized SWNTs products were
characterized by scanning electron microscopy, transmission electron microscopy, Raman
spectroscopy and atomic force microscopy. It was found that diameters of the as-grown SWNTs
strongly depend on the type of catalysts. Compared with the case of nonmagnetic catalysts,
SWNTs synthesized from transition metal catalysts have a narrow diameter distribution. Our
findings indicate that oil residue is cheaper and suitable industrial carbon source for the SWNT
growth with high quality. (C) 2012 Elsevier B.V. All rights reserved.
语种: English
文献类型: Article
作者关键词: Heavy oil residue; Single-walled carbon nanotube; Catalytic method
KeyWords Plus: CHEMICAL-VAPOR-DEPOSITION; DEOILED ASPHALT; GROWTH; CATALYST
地址: [Li, Yongfeng; Wang, Gang; Gao, Jinsen] China Univ Petr, Coll Chem Engn, State Key Lab
Heavy Oil Proc, Beijing 102249, Peoples R China.
[Wang, Huafeng] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
通讯作者地址: Li, YF (通讯作者),China Univ Petr, Coll Chem Engn, State Key Lab Heavy Oil Proc,
Beijing 102249, Peoples R China.
电子邮件地址: liyongfeng2004@yahoo.com.cn
ISSN: 1385-8947
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 21106184
Science Foundation Research Funds YJRC-2011-18
We gratefully thank the National Natural Science Foundation of China (No. 21106184), the
Science Foundation Research Funds Provided to New Recruitments of China University of
Petroleum, Beijing (No. YJRC-2011-18), and Thousand Talents Program.
-------------------------------------------------------------------------------第 213 条，共 234 条
标题: Spin filter and molecular switch based on bowtie-shaped graphene nanoflake
作者: Kang, J (Kang, Jun); Wu, FM (Wu, Fengmin); Li, JB (Li, Jingbo)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 112 期: 10 文献号: 104328 DOI:
10.1063/1.4766914 出版年: NOV 15 2012
摘要: The magnetic and transport properties of bowtie-shaped graphene nanoflake (BGNF) are
investigated from first principles calculations. The eigen states of ferromagnetic (FM) BGNF near
Fermi level are found to be delocalized over the whole flake, whereas those of antiferromagnetic
(AFM) BGNF are localized in one side. The different characters result in different transport
properties for FM and AFM BGNFs. FM BGNF exhibits perfect spin filtering effect and can serve as
a spin filter. Moreover, the conductance of BGNF is much larger in FM state than in AFM state,
thus BGNF can serve as a molecular switch. These results suggest that BGNF is a good candidate
for
future
nanoelectronics.
(C)
2012
American
Institute
of
Physics.
[http://dx.doi.org/10.1063/1.4766914]
语种: English
文献类型: Article
KeyWords Plus: FILMS; FIELD
地址: [Kang, Jun; Li, Jingbo] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst
Semicond, Beijing 100083, Peoples R China.
[Wu, Fengmin; Li, Jingbo] Zhejiang Normal Univ, Jinhua 321004, Zhejiang, Peoples R China.
通讯作者地址: Kang, J (通讯作者),Chinese Acad Sci, State Key Lab Superlattices & Microstruct,
Inst Semicond, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: jbli@semi.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
National Science Fund for Distinguished Young Scholar 60925016
National Basic Research Program of China 2011CB921901
Chinese Academy of Sciences
J. Li gratefully acknowledges financial support from the National Science Fund for Distinguished
Young Scholar (Grant No. 60925016). This work is supported by the National Basic Research
Program of China (Grant No. 2011CB921901) and the External Cooperation Program of Chinese
Academy of Sciences. We acknowledge the computing resources provided by the
Supercomputing Center, CNIC, CAS.
-------------------------------------------------------------------------------第 214 条，共 234 条
标题: Index-coupled surface porous grating distributed feedback quantum cascade laser
作者: Zhang, JC (Zhang, J. C.); Liu, FQ (Liu, F. Q.); Zhao, LH (Zhao, L. H.); Wang, LJ (Wang, L. J.); Yao,
DY (Yao, D. Y.); Zhai, SQ (Zhai, S. Q.); Liu, JQ (Liu, J. Q.); Wang, ZG (Wang, Z. G.)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 112 期: 10 文献号: 103102 DOI:
10.1063/1.4765738 出版年: NOV 15 2012
摘要: We report design of special low loss, index-coupled surface porous grating distributed
feedback profile by using holographic lithography combined with electro-chemical etching
technology. Room temperature continuous-wave (cw) operation of single-mode quantum
cascade lasers emitting at lambda similar to 7.6 mu m has been achieved. Due to attenuate
interplay between the surface plasmon waves and the waveguide waves, the waveguide loss of
the lasers is significantly reduced, when compared to conventional surface metal/semiconductor
grating devices. This resulted in an improved overall laser performance, such as a reduction of the
threshold current density and an increase in cw output power. (C) 2012 American Institute of
Physics. [http://dx.doi.org/10.1063/1.4765738]
语种: English
文献类型: Article
KeyWords Plus: ROOM-TEMPERATURE; CONTINUOUS-WAVE; MU-M; SILICON; MODE
地址: [Zhang, J. C.; Liu, F. Q.; Zhao, L. H.; Wang, L. J.; Yao, D. Y.; Zhai, S. Q.; Liu, J. Q.; Wang, Z. G.]
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: Zhang, JC (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电子邮件地址: fqliu@semi.ac.cn; ljwang@semi.ac.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
National Research Projects of China 60736031
60806018
60906026
2006CB604903
2007AA03Z446
2009AA03Z403
This work was supported by the National Research Projects of China (Grant Nos. 60736031,
60806018, 60906026, 2006CB604903, 2007AA03Z446, and 2009AA03Z403).
-------------------------------------------------------------------------------第 215 条，共 234 条
标题: Growth of large domain epitaxial graphene on the C-face of SiC
作者: Zhang, R (Zhang, Rui); Dong, YL (Dong, Yunliang); Kong, WJ (Kong, Wenjie); Han, WP (Han,
Wenpeng); Tan, PH (Tan, Pingheng); Liao, ZM (Liao, Zhimin); Wu, XS (Wu, Xiaosong); Yu, DP (Yu,
Dapeng)
来源出版物: JOURNAL OF APPLIED PHYSICS 卷: 112 期: 10 文献号: 104307 DOI:
10.1063/1.4765666 出版年: NOV 15 2012
摘要: Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a
confinement controlled sublimation (CCS) method, we have achieved well controlled growth and
been able to observe propagation of uniform monolayer graphene. Surface patterns uncover two
important aspects of the growth, i.e., carbon diffusion and stoichiometric requirement. Moreover,
a new "stepdown" growth mode has been discovered. Via this mode, monolayer graphene
domains can have an area of hundreds of square micrometers, while, most importantly, step
bunching is avoided and the initial uniformly stepped SiC surface is preserved. The stepdown
growth provides a possible route towards uniform epitaxial graphene in wafer size without
compromising the initial flat surface morphology of SiC. (C) 2012 American Institute of Physics.
[http://dx.doi.org/10.1063/1.4765666]
语种: English
文献类型: Article
KeyWords Plus: SILICON-CARBIDE; GRAPHITE; CONFINEMENT; SIZE
地址: [Zhang, Rui; Liao, Zhimin; Wu, Xiaosong; Yu, Dapeng] Peking Univ, State Key Lab Artificial
Microstruct & Mesoscop P, Beijing 100871, Peoples R China.
[Dong, Yunliang; Kong, Wenjie] Guangxi Normal Univ, Dept Phys, Guilin 541004, Guangxi, Peoples
R China.
[Han, Wenpeng; Tan, Pingheng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Zhang, R (通讯作者),Peking Univ, State Key Lab Artificial Microstruct & Mesoscop
P, Beijing 100871, Peoples R China.
电子邮件地址: xswu@pku.edu.cn
ISSN: 0021-8979
基金资助致谢:
基金资助机构 授权号
National Science Foundation of China (NSFC) 11074007
Ministry of Science and Technology (MOST) 2012CB933404
2012CB933401
2009CB623703
This work was supported by National Science Foundation of China (NSFC Project No. 11074007)
and Ministry of Science and Technology (MOST Nos. 2012CB933404, 2012CB933401, and
2009CB623703). We also acknowledge the International Science Technology Cooperation
Program of China Sino Swiss Science and Technology Cooperation Program (SSSTC,
2010DFA01810).
-------------------------------------------------------------------------------第 216 条，共 234 条
标题: Design and Characterization of a Top Cladding for Silicon-on-Insulator Grating Coupler
作者: Anastasia, N (Anastasia, Nemkova); Xiao, X (Xiao Xi); Yang, B (Yang Biao); Chu, T (Chu Tao);
Yu, JZ (Yu Jin-Zhong); Yu, YD (Yu Yu-De)
来 源 出 版 物 : CHINESE PHYSICS LETTERS 卷 : 29 期 : 11 文 献 号 : 114213 DOI:
10.1088/0256-307X/29/11/114213 出版年: NOV 2012
摘要: An effective top cladding for silicon-on-insulator grating coupler is designed and the validity
of the design is confirmed experimentally. The proposed double-layer silicon oxide/silicon nitride
(SiO2/Si3N4) cladding demonstrates antireflection properties and affects a coupling strength of
the grating structure. A coupling efficiency of 65% is obtained after cladding layer deposition.
语种: English
文献类型: Article
KeyWords Plus: NANOPHOTONIC WAVE-GUIDES; FIBER; COMPACT
地址: [Anastasia, Nemkova; Xiao Xi; Yang Biao; Chu Tao; Yu Jin-Zhong; Yu Yu-De] Chinese Acad Sci,
Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Yu, YD (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: yudeyu@semi.ac.cn
ISSN: 0256-307X
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CB301701
National Natural Science Foundation of China 60877036
61107048
Chinese Academy of Sciences 2011Y1GB07
China Postdoctoral Science Foundation 2011M500372
Supported by the National Basic Research Program of China under Grant No 2011CB301701, the
National Natural Science Foundation of China under Grant Nos 60877036 and 61107048, Chinese
Academy of Sciences for a fellowship for young international scientists (No 2011Y1GB07) and
China Postdoctoral Science Foundation (No 2011M500372).
-------------------------------------------------------------------------------第 217 条，共 234 条
标题: Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP
Avalanche Photodiodes
作者: Li, B (Li Bin); Yang, HW (Yang Huai-Wei); Gui, Q (Gui Qiang); Yang, XH (Yang Xiao-Hong);
Wang, J (Wang Jie); Wang, XP (Wang Xiu-Ping); Liu, SQ (Liu Shao-Qing); Han, Q (Han Qin)
来 源 出 版 物 : CHINESE PHYSICS LETTERS 卷 : 29 期 : 11 文 献 号 : 118503 DOI:
10.1088/0256-307X/29/11/118503 出版年: NOV 2012
摘 要 : A separate absorption, grading, charge and multiplication InGaAs/InP avalanche
photodiode with ultra low dark current and high responsivity is demonstrated. It has a thin
multiplication layer and a planar structure. Through the use of a well and a single floating guard
ring to suppress edge breakdown, the device can easily be fabricated by one step epitaxial growth
and one step diffusion. The dark current of a 30 mu m diameter device is as low as 0.028 nA at
punch-through and 0.1 nA at 90% of the breakdown voltage. The responsivity at 1.55 mu m is
0.93A/W at unity gain and the multiplication layer is estimated to be less than 300 nm.
语种: English
文献类型: Article
KeyWords Plus: GUARD RINGS; PERIPHERY
地址: [Li Bin; Yang Huai-Wei; Gui Qiang; Yang Xiao-Hong; Wang Jie; Wang Xiu-Ping; Liu Shao-Qing;
Han Qin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083,
Peoples R China.
通讯作者地址: Han, Q (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: hanqin@red.semi.ac.cn
ISSN: 0256-307X
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61176053
61274069
61021003
National Key Basic Research Program of China 2012CB933503
National High-Technology Research and Development Program of China 2012AA012202
Supported by the National Natural Science Foundation of China under Grant Nos 61176053,
61274069 and 61021003, the National Key Basic Research Program of China under Grant No
2012CB933503, and the National High-Technology Research and Development Program of China
under Grant No 2012AA012202.
-------------------------------------------------------------------------------第 218 条，共 234 条
标题: Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire
作者: Zhao, GJ (Zhao Gui-Juan); Li, ZW (Li Zhi-Wei); Wei, HY (Wei Hong-Yuan); Liu, GP (Liu
Gui-Peng); Liu, XL (Liu Xiang-Lin); Yang, SY (Yang Shao-Yan); Zhu, QS (Zhu Qin-Sheng); Wang, ZG
(Wang Zhan-Guo)
来 源 出 版 物 : CHINESE PHYSICS LETTERS 卷 : 29 期 : 11 文 献 号 : 117103 DOI:
10.1088/0256-307X/29/11/117103 出版年: NOV 2012
摘 要 : The non-polar a-plane (11 (2) over bar0) InxGa1-xN alloys with different indium
compositions (0.074 <= x <= 0.555) were grown on r-plane (10 (1) over bar2) sapphire substrates
by metalorganic chemical vapor deposition, and the indium compositions x are estimated from
x-ray diffraction measurements. The in-plane orientation of the InxGa1-xN with respect to the
r-plane substrate is confirmed to be [(1) over bar 100](sapphire)parallel to [11 (2) over
bar0](InxGa1-xN) and [(1) over bar 101](sapphire)parallel to [0001](InxGa1-xN). The effects of
substrate temperature, reactor pressure and trimethylindium input flow on the indium
incorporation and growth rate are investigated. The morphology of the a-plane InxGa1-xN is
found to be significantly improved with the decreasing indium composition.. and growth rate.
Moreover, the in-plane anisotropic structural characteristics are revealed by high resolution x-ray
diffraction employing azimuthal dependence, and the degree of anisotropy decreases with the
increase of indium composition.
语种: English
文献类型: Article
KeyWords Plus: LIGHT-EMITTING DIODE; QUANTUM-WELL LASER; INDIUM INCORPORATION;
CRITICAL THICKNESS; INGAN; GAN; GAINN; IMMISCIBILITY; EPITAXY; FILMS
地址: [Zhao Gui-Juan; Li Zhi-Wei; Wei Hong-Yuan; Liu Gui-Peng; Liu Xiang-Lin; Yang Shao-Yan; Zhu
Qin-Sheng; Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing
100083, Peoples R China.
通讯作者地址: Zhao, GJ (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
POB 912, Beijing 100083, Peoples R China.
电子邮件地址: gjzhao@semi.ac.cn
ISSN: 0256-307X
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60976008
61006004
61076001
10979507
Special Funds for Major State Basic Research Project (973 program) of China A000091109-05
National High-Technology R&D Program of China 2011AA03A101
Supported by the National Natural Science Foundation of China under Grant Nos 60976008,
61006004, 61076001 and 10979507, the Special Funds for Major State Basic Research Project
(973 program) of China (No A000091109-05) and the National High-Technology R&D Program of
China (No 2011AA03A101).
-------------------------------------------------------------------------------第 219 条，共 234 条
标 题 : Band modification in (Ga, Mn) As evidenced by new measurement scheme photoresistance magnetic circular dichroism
作者: Huang, XJ (Huang, X. J.); Wang, LG (Wang, L. G.); Chen, L (Chen, L.); Zhao, JH (Zhao, J. H.);
Zheng, HZ (Zheng, H. Z.)
来 源 出 版 物 : EUROPEAN PHYSICAL JOURNAL B 卷 : 85 期 : 11 文 献 号 : 381 DOI:
10.1140/epjb/e2012-30785-6 出版年: NOV 2012
摘要: A new scheme for measuring magneto-optical (MO) effect is developed in the present work,
called photoresistance magnetic circular dichroism (PR-MCD). It detects the differential
photoresistance of materials between two circularly polarized excitations. That allows us to
detect the MO effect induced mainly by interband transitions, as evidenced by the appearance of
a clear long wavelength cutoff at 840 nm in PR-MCD spectrum. Our results provide unambiguous
evidence that the host semiconductor band structure of (Ga, Mn) As is indeed modified by the
strong exchange interactions. It is also found that the interband-induced MO effect decays rather
fast with increasing temperatures as compared to MO effects observed in conventional MCD
measurements. Moreover, our PR-MCD measurements show interesting feature of diluted
magnetic semiconductor Ga1-xMnxAs of a high mole fraction x. PR-MCD signal persists in a
reentrant insulating phase at temperatures blow half of Curie temperature (similar to 80 K), and
disappears right above it. Such an intrigue feature might be self-consistently explained by recent
theory, developed for diluted magnetic semiconductors in the strong correlation regime.
语种: English
文献类型: Article
KeyWords Plus: FERROMAGNETIC SEMICONDUCTORS; TEMPERATURE
地址: [Huang, X. J.; Wang, L. G.; Chen, L.; Zhao, J. H.; Zheng, H. Z.] Chinese Acad Sci, Inst
Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
通 讯 作 者 地 址 : Huang, XJ ( 通 讯 作 者 ),Chinese Acad Sci, Inst Semicond, State Key Lab
Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: hzzheng@red.semi.ac.cn
ISSN: 1434-6028
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2011CB932901
National Natural Science Foundation of China 60836002
This work was partly supported by The National Basic Research Program of China under Grant
2011CB932901 and the National Natural Science Foundation of China under Grants 60836002.
-------------------------------------------------------------------------------第 220 条，共 234 条
标题: Band structure, phase transition, phonon and elastic instabilities in calcium polonide under
pressure: A first-principles study
作者: Shi, LW (Shi, Liwei); Wu, L (Wu, Ling); Duan, YF (Duan, Yifeng); Hao, LZ (Hao, Lanzhong); Hu,
J (Hu, Jing); Yang, XQ (Yang, Xianqing); Tang, G (Tang, Gang)
来源出版物: SOLID STATE COMMUNICATIONS 卷: 152 期: 22 页: 2058-2062 DOI:
10.1016/j.ssc.2012.08.028 出版年: NOV 2012
摘要: Ab initio self-consistent calculations were performed to study the structure, electronic,
elastic and lattice dynamical properties of calcium polonide under hydrostatic pressure. Enthalpy
calculations show that the material undergoes a first-order phase transition from rocksalt (RS) to
CsCl structure at 16.7 GPa with 5.0% volume collapse. A soft transverse acoustic phonon mode at
the zone boundary X point is identified at 21.1 GPa for RS phase, signifying a pressure-induced
dynamical instability. Moreover, the shear modulus C-44 in RS phase softens with increasing
pressure. Our results imply that the underlying physical origin of pressure-induced RS -> CsCl
phase transition might be in close relation with the coupling between unstable X-point phonon
mode and shear modulus C-44. The RS phase under pressure undergoes a direct -> indirect
bandgap transition. The anomalous behavior of band structure originates from the fact that the
top valence and bottom conduction states at different reciprocal lattice points show the different
dependence on hydrostatic pressure. (C) 2012 Elsevier Ltd. All rights reserved.
语种: English
文献类型: Article
作者关键词: Phase transition; Phonon and elastic instabilities; Band structure; Pressure effect
KeyWords Plus: FUNCTIONAL PERTURBATION-THEORY; AB-INITIO; CHALCOGENIDES;
COMPRESSION; BEHAVIOR; ENERGY; STATE; CAS
地址: [Shi, Liwei; Wu, Ling; Duan, Yifeng; Hu, Jing; Yang, Xianqing; Tang, Gang] China Univ Min &
Technol, Sch Sci, Dept Phys, Xuzhou 221116, Peoples R China.
[Shi, Liwei] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R
China.
[Hao, Lanzhong] China Univ Petr, Fac Sci, Qingdao 266555, Peoples R China.
通讯作者地址: Shi, LW (通讯作者),China Univ Min & Technol, Sch Sci, Dept Phys, Xuzhou 221116,
Peoples R China.
电子邮件地址: Liweishi@semi.ac.cn
ISSN: 0038-1098
基金资助致谢:
基金资助机构 授权号
Fundamental Research Funds for the Central Universities of China 2012QNA39
We thank Dr. Shandong Guo from Institute of Physics Chinese Academy of Sciences for the useful
discussions. The computational resources was provided by School of Physics, Shandong University.
The work is supported by the Fundamental Research Funds for the Central Universities of China
under Grant No. 2012QNA39.
-------------------------------------------------------------------------------第 221 条，共 234 条
标题: Effect of nitrogen and carbon doping on electronic properties of SrTiO3
作者: Liu, HF (Liu, H. F.)
来源出版物: SOLID STATE COMMUNICATIONS 卷: 152 期: 22 页: 2063-2065 DOI:
10.1016/j.ssc.2012.08.027 出版年: NOV 2012
摘要: The energy band structures of nitrogen(N)-doped and carbon(C)-doped SrTiO3 are
calculated based on the first-principles density-functional theory. The substitution of N(C) for O
may introduce isolated states above the top of O 2p valence band, but the band gap narrowing
driven by mixing of N(C) with O 2p states is very small. Our results are consistent with
experimental data of N-doped SrTiO3, where the absorption of visible light arises from the N 2p
states localized above the valence-band maximum of SrTiO3, rather than the band gap narrowing.
(C) 2012 Elsevier Ltd. All rights reserved.
语种: English
文献类型: Article
作者关键词: Semiconductors; Ab initio calculations; Electronic band structure
KeyWords Plus: VISIBLE-LIGHT PHOTOCATALYSIS; AUGMENTED-WAVE METHOD; DOPED SRTIO3;
TITANIUM-DIOXIDE; BAND-STRUCTURE; OXIDATION
地址: Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083,
Peoples R China.
通讯作者地址: Liu, HF (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices &
Microstruct, POB 912, Beijing 100083, Peoples R China.
电子邮件地址: liuhongfei001@163.com
ISSN: 0038-1098
-------------------------------------------------------------------------------第 222 条，共 234 条
标 题 : Wetting layer evolution and its temperature dependence during self-assembly of
InAs/GaAs quantum dots
作者: Zhang, HY (Zhang, Hongyi); Chen, YH (Chen, Yonghai); Zhou, GY (Zhou, Guanyu); Tang, CG
(Tang, Chenguang); Wang, ZG (Wang, Zhanguo)
来 源 出 版 物 : NANOSCALE RESEARCH LETTERS
卷: 7
文 献 号 : 600
DOI:
10.1186/1556-276X-7-600 出版年: OCT 30 2012
摘要: For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its
temperature dependence were studied using reflectance difference spectroscopy and were
analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively
low growth temperatures but showed an initial increase and then decrease at higher
temperatures, which were unexpected from a thermodynamic understanding. By adopting a rate
equation model, the temperature dependence of QD formation rate was assigned as the origin of
different WL evolutions. A brief discussion on the indium desorption was given. Those results
gave hints of the kinetic aspects of QD self-assembly.
语种: English
文献类型: Article
作者关键词: Quantum dots; Stranski-Krastanov growth mode; Wetting layer; Desorption; Growth
kinetics
KeyWords Plus: REFLECTANCE DIFFERENCE SPECTROSCOPY; INAS; DESORPTION; GROWTH; GAAS;
EPITAXY; LASERS; SYSTEM
地址: [Zhang, Hongyi; Chen, Yonghai; Zhou, Guanyu; Tang, Chenguang; Wang, Zhanguo] Chinese
Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: Chen, YH (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
POB 912, Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : hyzhang@semi.ac.cn; yhchen@semi.ac.cn;
cgtang@semi.ac.cn; zgwang@semi.ac.cn
ISSN: 1931-7573
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60990313
973 program 2012CB921304
2012CB619306
863 program 2011AA 03A 101
gyzhou@semi.ac.cn;
The work was supported by the National Natural Science Foundation of China (no. 60990313),
the 973 program (2012CB921304, 2012CB619306), and the 863 program (2011AA 03A 101).
-------------------------------------------------------------------------------第 223 条，共 234 条
标题: Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray
photoelectron spectroscopy
作者: Wei, W (Wei, Wei); Qin, ZX (Qin, Zhixin); Fan, SF (Fan, Shunfei); Li, ZW (Li, Zhiwei); Shi, K
(Shi, Kai); Zhu, QS (Zhu, Qinsheng); Zhang, GY (Zhang, Guoyi)
来 源 出 版 物 : NANOSCALE RESEARCH LETTERS
卷: 7
文 献 号 : 562
DOI:
10.1186/1556-276X-7-562 出版年: OCT 10 2012
摘要: A sample of the beta-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal
oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the
beta-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the
beta-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is
demonstrated that the valence band of the beta-Ga2O3/GaN structure is 1.40 +/- 0.08 eV.
语种: English
文献类型: Article
作 者 关 键 词 : beta-Ga2O3/wurtzite GaN heterostructure; Band offset; X-ray photoelectron
spectroscopy
地址: [Wei, Wei; Qin, Zhixin; Fan, Shunfei; Zhang, Guoyi] Peking Univ, Sch Phys, State Key Lab
Artificial Microstruct & Microscop, Beijing 100871, Peoples R China.
[Li, Zhiwei; Shi, Kai; Zhu, Qinsheng] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
通讯作者地址: Qin, ZX (通讯作者),Peking Univ, Sch Phys, State Key Lab Artificial Microstruct &
Microscop, Beijing 100871, Peoples R China.
电子邮件地址: zxqin@pku.edu.cn
ISSN: 1931-7573
基金资助致谢:
基金资助机构 授权号
National Key Basic R&D Plan (973 Project) of China 2012CB619301
2012CB619306
This work was supported by the National Key Basic R&D Plan (973 Project) of China (Grant nos.
2012CB619301 and 2012CB619306).
-------------------------------------------------------------------------------第 224 条，共 234 条
标题: An Impedance Immunosensor for Detection of H5 Subtype Avian Influenza Virus
作者: Yan, XF (Yan Xiao-Fei); Li, YT (Li Yun-Tao); Wang, RH (Wang Rong-Hui); Lin, JH (Lin Jian-Han);
Wen, XH (Wen Xin-Hua); Wang, MH (Wang Mao-Hua); An, D (An Dong); Han, WJ (Han Wei-Jing);
Yu, YD (Yu Yu-De); Li, YB (Li Yan-Bin)
来源出版物: CHINESE JOURNAL OF ANALYTICAL CHEMISTRY 卷: 40 期: 10 页: 1507-1513
DOI: 10.3724/SP.J.1096.2012.20120 出版年: OCT 2012
摘要: An impedance immunosensor was developed for the rapid detection of H5 subtype avian
influenza virus (AIV). Monoclonal antibodies against AIV H5N1 surface antigen hemagglutinin (HA)
were immobilized on the surface of gold interdigitated array microelectrodes through protein A
for capturing AIV H5N1 in sample solutions. Electrochemical impedance spectroscopy in the
presence of [Fe(CN)(6)](3-/4-) as a redox probe was used to describe the surface modification of
microelectrodes and the binding of viruses. A linear relationship between the logarithmic value of
concentration of AIV H5N1 and the change of electron transfer resistance was found in the
concentration range of 2(1) - 2(6) HA unit per 50 mu L, and its correlation coefficient was 0.9885.
The detection limit was 2(0) HA unit per 50 mu L, and the detection time was 1 h. This
immunosensor could be used repeatedly with good specificity and high sensitivity, and it is
promising for rapid detection of pathogenic microorganisms.
语种: Chinese
文献类型: Article
作者关键词: Impedance immunosensor; Avian influenza virus; Electrochemical impedance
spectroscopy; Interdigitated array microelectrodes
KeyWords Plus: MEDIATED ISOTHERMAL AMPLIFICATION; CHICKEN FECAL SAMPLES; RAPID
DETECTION; ACID; BIOSENSOR; ELECTRODE; ELISA; ASSAY
地址: [Yan Xiao-Fei; Wen Xin-Hua; Wang Mao-Hua; An Dong] China Agr Univ, Minist Educ, Key Lab
Modern Precis Agr Syst Integrat Res, Beijing 100083, Peoples R China.
[Li Yun-Tao; Han Wei-Jing; Yu Yu-De] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
[Wang Rong-Hui; Lin Jian-Han; Li Yan-Bin] Univ Arkansas, Dept Biol & Agr Engn, Fayetteville, AR
72701 USA.
通讯作者地址: Wang, MH (通讯作者),China Agr Univ, Minist Educ, Key Lab Modern Precis Agr
Syst Integrat Res, Beijing 100083, Peoples R China.
电子邮件地址: wangmh@cau.edu.cn
ISSN: 0253-3820
-------------------------------------------------------------------------------第 225 条，共 234 条
标题: The Effect of Double-Pass Gain on the Performances of a Quantum-Dot Superluminescent
Diode Integrated With a Semiconductor Optical Amplifier
作者: An, Q (An, Qi); Jin, P (Jin, Peng); Wang, ZC (Wang, Zuocai); Li, XK (Li, Xinkun); Wang, ZG
(Wang, Zhanguo)
来 源 出 版 物 : JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 : 30
期 : 16
DOI:
10.1109/JLT.2012.2206370 出版年: AUG 15 2012
摘要: We fabricate a quantum-dot (QD) superlumenescent diode (SLD) integrated with a
semiconductor optical amplifier (SOA). The integrated device exhibits coordinative working
between the SLD and SOA when the two sections are pumped with a series of different currents.
However, the SLD source affects the device behavior not via the amount of energy supplied by
itself, but via an existing double-pass gain throughout the whole structure. With the help of a QD
device model, this behavior is numerically analyzed which explains the origin of competition
between different QD states in the emission spectra as well as the strong power-control
capability of the SLD source.
语种: English
文献类型: Article
作者关键词: Quantum dots (QD); semiconductor device modeling; superluminescent diodes
(SLD)
KeyWords Plus: LIGHT-SOURCE; NUMERICAL-ANALYSIS; SATURATION
地址: [An, Qi; Jin, Peng; Wang, Zuocai; Li, Xinkun; Wang, Zhanguo] Chinese Acad Sci, Inst
Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
通讯作者地址: An, Q (通讯作者),Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci,
Beijing 100083, Peoples R China.
电 子 邮 件 地 址 : anqi@semi.ac.cn;
phylxk@semi.ac.cn; zgwang@semi.ac.cn
ISSN: 0733-8724
pengjin@semi.ac.cn;
wangzuocai@gmail.com;
基金资助致谢:
基金资助机构 授权号
National Basic Research Program of China 2006CB604904
National Natural Science Foundation of China 60976057
60876086
60776037
Manuscript received March 23, 2012; revised June 03, 2012 and June 25, 2012; accepted June 25,
2012. Date of publication July 06, 2012; date of current version July 25, 2012. This work was
supported by the National Basic Research Program of China under Grant 2006CB604904 and the
National Natural Science Foundation of China under Grant 60976057, Grant 60876086, and Grant
60776037.
-------------------------------------------------------------------------------第 226 条，共 234 条
标题: Enhanced Optical and Electrical Properties of GaN-Based Light-Emitting Diodes with
Interconnecting Indium Tin Oxide Nanowires Using Self-Assembled NaCl Particles
作者: Tian, T (Tian, Ting); Zhang, YY (Zhang, Yiyun); Yi, XY (Yi, Xiaoyan); Liu, ZQ (Liu, Zhiqiang); Li,
J (Li, Jing); Wang, GH (Wang, Guohong)
来源出版物: ECS SOLID STATE LETTERS 卷: 1 期: 2 页: R5-R8 DOI: 10.1149/2.019202ssl
出版年: 2012
摘要: GaN-based light emitting diodes (LEDs) with interconnecting indium tin oxide (ITO)
nanowires were fabricated using self-assembled NaCl particles as etching masks. Compared to
conventional LEDs with a planar ITO layer, it was found that the light output power (LOP) of the
LEDs with a ITO layer with interconnecting nanowires was improved by 18.4% at an injection
current of 20 mA. Meanwhile, a great improvement in the electrical characteristics of LEDs was
also observed. These enhancements are attributed to the increase of photons escaping from the
ITO surface with nanowires as well as the improved current spreading of the ITO layer with
interconnecting ITO nanowires. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.019202ssl]
All rights reserved.
语种: English
文献类型: Article
KeyWords Plus: EXTRACTION EFFICIENCY; REFRACTIVE-INDEX; SURFACE; CONTACT; NITRIDE;
OUTPUT; GROWTH
地址: [Tian, Ting; Zhang, Yiyun; Yi, Xiaoyan; Liu, Zhiqiang; Li, Jing; Wang, Guohong] Chinese Acad
Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
通讯作者地址: Tian, T (通讯作者),Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol
Res & Dev Ctr, Beijing 100083, Peoples R China.
电子邮件地址: yyzhang@semi.ac.cn
ISSN: 2162-8742
基金资助致谢:
基金资助机构 授权号
National High Technology Program of China 2011AA03A105
This work was supported by the National High Technology Program of China under grant
No.2011AA03A105.
-------------------------------------------------------------------------------第 227 条，共 234 条
标题: Density functional theory study on transparent conductive oxide CuScO2
作者: Fang, ZJ (Fang Zhi-Jie); Mo, M (Mo Man); Zhu, JZ (Zhu Ji-Zhen); Yang, H (Yang Hao)
来 源 出 版 物 : ACTA PHYSICA SINICA
卷 : 61
期 : 22
文 献 号 : 227401
DOI:
10.7498/aps.61.227401 出版年: 2012
摘要: Using the first-principle method within the generalized gradient approximation, in this
paper we study the band structure, state density and doping level of transparent conductive
oxide CuScO2. The calculated results show that the valence band of CuScO2 is composed mainly
of 3d of Cu, and 2p of O; while the conduct band is comprised mainly of 3d of Sc. Through the +U
correction, with the increase of the value of U, the conduct band of CuScO2 becomes split, and
results in the enlarged band gap, which shows that the +U correction can improve the band gap
of CuScO2. By comparing all kinds of dopant level in CuScO2, it found that the substitution of Mg
for Sc can effectively improve the p-type conductivity in CuScO2.
语种: Chinese
文献类型: Article
作者关键词: CuScO2; band structure; electronic structure
KeyWords Plus: THIN-FILMS; ELECTRICAL-CONDUCTION; DELAFOSSITE STRUCTURE; NATIVE
DEFECTS; CUALO2; CUYO2; 1ST-PRINCIPLE; ZNO
地址: [Fang Zhi-Jie; Mo Man; Zhu Ji-Zhen; Yang Hao] Guangxi Univ Technol, Dept Informat &
Computat Sci, Liuzhou 545006, Peoples R China.
[Fang Zhi-Jie] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing
100083, Peoples R China.
通讯作者地址: Fang, ZJ (通讯作者),Guangxi Univ Technol, Dept Informat & Computat Sci,
Liuzhou 545006, Peoples R China.
电子邮件地址: nnfang@semi.ac.cn
ISSN: 1000-3290
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 11147195
Guangxi Experiment Centre of Science and Technology LGZXKF201204
Science Plan Projects of Guangxi Provincial Education Department 200103YB102
Project supported by the National Natural Science Foundation of China (Grant No. 11147195),
Guangxi Experiment Centre of Science and Technology (Grant No. LGZXKF201204), and the
Science Plan Projects of Guangxi Provincial Education Department (Grant No. 200103YB102).
-------------------------------------------------------------------------------第 228 条，共 234 条
标题: Quantum teleportation using superconducting charge qubits in thermal equilibrium
作者: Qiao, PP (Qiao Pan-Pan); Abliz, A (Abliz, Ahmad); Cai, JT (Cai Jiang-Tao); Lu, JZ (Lu Jun-Zhe);
Tusun, M (Tusun, Maimaitiyiming); Maimaitiming, R (Maimaitiming, Ribigu)
来 源 出 版 物 : ACTA PHYSICA SINICA
卷 : 61
期 : 24
文 献 号 : 240303
DOI:
10.7498/aps.61.240303 出版年: 2012
摘要: Is this paper we mainly investigate the effects of the temperature and Josephson energy on
teleportation of one qubit state in both the standard and the non-standard protocols as well as
the partial teleportation of an entangled state under the standard protocol via two identical
superconducting charge qubits in thermal equilibrium as the teleportation channel, and give the
analytical expression of the average fidelity. Our results show that the teleportation of one qubit
state in non-standard protocol and the partial teleportation of entanglement in standard protocol
can be almost perfect, indicating that quantum teleportation, with using superconducting charge
qubits in thermal equilibrium as a quantum channel, is feasible in theory.
语种: Chinese
文献类型: Article
作者关键词: superconducting charge qubit; quantum teleportation; average fidelity
KeyWords Plus: ENTANGLEMENT; STATE
地址: [Qiao Pan-Pan; Abliz, Ahmad; Lu Jun-Zhe; Tusun, Maimaitiyiming; Maimaitiming, Ribigu]
Xinjiang Normal Univ, Sch Phys & Elect Engn, Urumqi 830054, Peoples R China.
[Cai Jiang-Tao] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing
100083, Peoples R China.
通讯作者地址: Qiao, PP (通讯作者),Xinjiang Normal Univ, Sch Phys & Elect Engn, Urumqi 830054,
Peoples R China.
电子邮件地址: aahmad@126.com
ISSN: 1000-3290
基金资助致谢:
基金资助机构 授权号
Foundation for Key Program of Ministry of Education, China 212193
Science and Technology Innovation Foundation for Graduate Students of XJNU 20121213
Innovative Foundation for Graduate Students
Key Subjects of Theoretical Physics of Xinjiang, China LLWLL201103
Natural Science Fund of XUAR 2012211A052
Project supported by the Foundation for Key Program of Ministry of Education, China (Grant No.
212193), the Science and Technology Innovation Foundation for Graduate Students of XJNU
(Grant No. 20121213), the Innovative Foundation for Graduate Students granted by the Key
Subjects of Theoretical Physics of Xinjiang, China (Grant No. LLWLL201103), and the Natural
Science Fund of XUAR (Grant No. 2012211A052).
-------------------------------------------------------------------------------第 229 条，共 234 条
标题: Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on
Ohmic contact
作者: Wang, XY (Wang Xiao-Yong); Chong, M (Chong Ming); Zhao, DG (Zhao De-Gang); Su, YM (Su
Yan-Mei)
来 源 出 版 物 : ACTA PHYSICA SINICA
卷 : 61
期 : 21
文 献 号 : 217302
DOI:
10.7498/aps.61.217302 出版年: 2012
摘 要 : In this paper, the characteristics of the two-dimensional hole gas (2DHG) in
p-GaN/p-AlxGa1-xN heterojunction is investigated in detail, based on self-consistent solutions of
one-dimensional Poisson and Schrodinger equations. The valence band structures and the 2DHG
distributions are calculated in the cases of different Al components and piezoelectric polarization
effects. Then, the influences of Al components and piezoelectric polarization effects on 2DHG are
analysed specifically. The results show that with the increase of Al component, the quantum well
at the heterojunction interface turns deeper and narrower, which leads to an accelerated growth
of the 2DHG peak density and a line increase of the 2DHG sheet concentration. Furthermore,
piezoelectric polarization effects also make the quantum well at the heterojunction interface
deeper and narrower, at the same time, the Fermi level moves close to the top of the barrier and
the location of peak density moves close to the heterojunction interface. In addition, the
influences of valence band offset and acceptor doping concentration on 2DHG are relatively small.
Ohmic contact of p-AlxGa1-xN is fabricatea with the 2DHG, and its I-V characteristic is much
better than that without the 2DHG, which indicates that the 2DHG can significantly improve the
performance of p-AlxGa1-xN ohmic contact.
语种: Chinese
文献类型: Article
作者关键词: p-AlGaN; piezoelectric polarization; two-dimensional hole gas; Ohmic contact
KeyWords Plus: QUANTUM-WELL; LAYERS; ALGAN; HETEROSTRUCTURES
地 址 : [Wang Xiao-Yong; Chong Ming; Su Yan-Mei] Chinese Acad Sci, Inst Semicond,
Nanooptoelect Lab, Beijing 100083, Peoples R China.
[Zhao De-Gang] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing
100083, Peoples R China.
通讯作者地址: Wang, XY (通讯作者),Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab,
Beijing 100083, Peoples R China.
电子邮件地址: wangxy08@semi.ac.cn
ISSN: 1000-3290
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60776047
National High Technology Development Program of China 2007AA03Z401
Project supported by the National Natural Science Foundation of China (Grant No. 60776047) and
the National High Technology Development Program of China (Grant No. 2007AA03Z401).
-------------------------------------------------------------------------------第 230 条，共 234 条
标题: Investigation of the temperature sensitivity of the long-wavelength InP-based laser
作者: Yang, XR (Yang Xin-Rong); Xu, B (Xu Bo); Zhao, GQ (Zhao Guo-Qing); Shen, XZ (Shen
Xiao-Zhi); Shi, SH (Shi Shu-Hui); Li, J (Li Jie); Wang, ZG (Wang Zhan-Guo)
来 源 出 版 物 : ACTA PHYSICA SINICA
卷 : 61
期 : 21
文 献 号 : 216802
DOI:
10.7498/aps.61.216802 出版年: 2012
摘要: The long-wavelength laser on InP (001) is fabricated, the temperature dependence of
threshold current density is investigated. The nomalous decrescence of threshold current density
is observed with the increase of temperature, which leads to a negative characteristic
temperature. The origin of this phenomenon is discussed. We attribute the anomalous
temperature dependence of threshold current density to the carrier redistribution effect.
语种: Chinese
文献类型: Article
作者关键词: quantum wires; laser; characteristic temperature
KeyWords Plus: QUANTUM-DASH LASERS; MU-M; INAS; DOTS; GROWTH; THRESHOLD
地址: [Yang Xin-Rong; Zhao Guo-Qing; Shen Xiao-Zhi; Shi Shu-Hui; Li Jie] Handan Coll, Dept Phys
& Elect Engn, Handan 056005, Peoples R China.
[Xu Bo; Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing
100083, Peoples R China.
通讯作者地址: Yang, XR (通讯作者),Handan Coll, Dept Phys & Elect Engn, Handan 056005,
Peoples R China.
电子邮件地址: yangxr1976@126.com
ISSN: 1000-3290
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 60990315
National Basic Research Program of China 2006CB604904
Science and Technology Research and Development Project of Hebei Province, China Z2010112
Science and Technology Support Program of Hebei Province, China 10213936
Project supported by the National Natural Science Foundation of China (Grant No. 60990315),
the National Basic Research Program of China (Grant No. 2006CB604904), the Science and
Technology Research and Development Project of Hebei Province, China (Grant No. Z2010112)
and the Science and Technology Support Program of Hebei Province, China (Grant No. 10213936).
-------------------------------------------------------------------------------第 231 条，共 234 条
标题: The progress of semiconductor photoelectric devices based on graphene
作者: Yin, WH (Yin Wei-Hong); Han, Q (Han Qin); Yang, XH (Yang Xiao-Hong)
来 源 出 版 物 : ACTA PHYSICA SINICA
卷 : 61
期 : 24
文 献 号 : 248502
DOI:
10.7498/aps.61.248502 出版年: 2012
摘要: Graphene has rich optical and electronic properties, nincluding zero band gap, high
mobility and special optical absorption properties, and it has attracted much attention. More and
more investigations focus on its fundamental physical properties and electronic devices. However,
many researchers believe that its true potential lies in photonics and optoelectronics, such as
photodetectors, modulators and transparent conductors used in light-emitting diodes or touch
screens. In this review, we summarize its applications in semiconductor photoelectric devices,
mainly for telecommunications.
语种: Chinese
文献类型: Article
作者关键词: graphene; photodetectors; modulators; semiconductor photoelectric devices
KeyWords Plus: EPITAXIAL GRAPHENE; OPTICAL MODULATOR; LAYER GRAPHENE; CARBON-FILMS;
PHOTOCURRENT; TRANSISTORS
地址: [Yin Wei-Hong; Han Qin; Yang Xiao-Hong] Chinese Acad Sci, Inst Semicond, State Key Lab
Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Yin, WH (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: hanqin@semi.ac.cn
ISSN: 1000-3290
基金资助致谢:
基金资助机构 授权号
State Key Development Program for Basic Research of China 2012CB933503
National High Technology Research and Development Program of China 2012AA012202
National Natural Science Foundation of China 61274069
61176053
61021003
Project supported by the State Key Development Program for Basic Research of China (Grant No.
2012CB933503), the National High Technology Research and Development Program of China
(Grant No. 2012AA012202), and the National Natural Science Foundation of China (Grant Nos.
61274069, 61176053, 61021003).
--------------------------------------------------------------------------------
第 232 条，共 234 条
标题: Enhanced Current Transportation in Silicon-riched Nitride (SRN)/Silicon-riched Oxide (SRO)
Multilayer Nanostructure
作者: Tao, YL (Tao, Yeliao); Zheng, J (Zheng, Jun); Zuo, YH (Zuo, Yuhua); Xue, CL (Xue, Chunlai);
Cheng, BW (Cheng, Buwen); Wang, QM (Wang, Qiming)
来 源 出 版 物 : NANO-MICRO LETTERS
卷 : 4
期 : 4
页 : 202-207
DOI:
10.3786/nml.v4i4.p202-207 出版年: 2012
摘要: A novel structure of silicon-riched nitride (SRN)/silicon-riched oxide (SRO) is proposed and
prepared using RF reactive magnetron co-sputtering. High temperature annealing of SRN/SRO
multilayers leads to formation of Si nanocrystals (NC) from isolating SRN and SRO layers
simultaneously, which efficiently improves carrier transport ability compared to conventional
SRN/Si3N4 counterpart. Micro-Raman scattering analysis reveals that SRN layer has dominating
number of denser and smaller Si NCs, while SRO layer has relatively less, sparser and bigger Si
NCs, as confirmed by high resolution transmission electron microscopy observation. The
substitute SRO layers for Si3N4 counterparts significantly increase the amount of Si NCs as well as
crystallization ratio in SRN layers; while the average Si NC size can be well controlled by the
thickness of SRN layers and the content of N, and hence an obvious stronger absorption in UV
region for the novel structure can be observed in absorption spectra. The I-V characteristics show
that the current of hybrid SRN/SRO system increases up to 2 orders of magnitude at 1 V and even
5 orders of magnitude at 4 V compared to that of SRN/Si3N4 structure. Si NCs in SiOy layers
provide a transport pathway for adjacent Si NCs in SiNx layers. The obvious advantage in carrier
transportation suggests that SRN/SRO hybrid system could be a promising structure and platform
to build Si nanostructured solar cells.
语种: English
文献类型: Article
作 者 关 键 词 : Silicon nanostructure; Magnetron sputtering; Raman Spectroscopy; Charge
transport
KeyWords
Plus:
AMORPHOUS-SILICON;
SI
NANOCRYSTALS;
RAMAN-SPECTRA;
PHOTOLUMINESCENCE; SCATTERING
地址: [Tao, Yeliao; Zheng, Jun; Zuo, Yuhua; Xue, Chunlai; Cheng, Buwen; Wang, Qiming] Chinese
Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
通讯作者地址: Zuo, YH (通讯作者),Chinese Acad Sci, Inst Semicond, State Key Lab Integrated
Optoelect, Beijing 100083, Peoples R China.
电子邮件地址: yhzuo@semi.ac.cn
ISSN: 2150-5551
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 61036001
51072194
60906035
This work was supported by the National Natural Science Foundation of China (No.61036001,
51072194 and 60906035)
-------------------------------------------------------------------------------第 233 条，共 234 条
标题: A facile synthesis method for Ni(OH)(2) ultrathin nanosheets and their conversion to
porous NiO nanosheets used for formaldehyde sensing
作者: Li, GH (Li, Guanghui); Wang, XW (Wang, Xuewen); Ding, HY (Ding, Haiyan); Zhang, T (Zhang,
Ting)
来源出版物: RSC ADVANCES 卷: 2 期: 33 页: 13018-13023 DOI: 10.1039/c2ra22049k 出
版年: 2012
摘要: Single-crystalline beta-Ni(OH)(2) ultrathin nanosheets were synthesized via a simple
electrochemical reaction of Ni electrodes with a mixed solution of NaCl, NaOH, and NH4Cl at
room temperature. The average thickness of beta-Ni(OH)(2) nanosheets is in the range 1-15 nm,
which can be readily tuned by changing the concentration of NaCl. The phase structure,
composition, morphology, and thickness of Ni(OH)(2) nanosheets were characterized by X-ray
diffraction (XRD), transmission electron microscopy (TEM), and atomic force microscopy (AFM).
The mechanism of the nanosheet formation is proposed as the selective adsorption of NH3
molecules on the (001) crystal face of beta-Ni(OH)(2) which suppresses growth in the [001]
direction. Porous NiO ultrathin nanosheets were obtained by thermal decomposition of
beta-Ni(OH)(2) nanosheets in air at 400 degrees C for 2 h. Gas sensing properties of NiO ultrathin
nanosheets were investigated, and the sensors exhibited high sensitivity, low detection limit, and
wide dynamic range for detection of formaldehyde.
语种: English
文献类型: Article
KeyWords Plus: NICKEL-HYDROXIDE NANOSHEETS; THIN-FILM; MESOPOROUS NIO; NO2 GAS;
BETA-NI(OH)(2); EXFOLIATION; PERFORMANCE; NANOWIRES
地址: [Li, Guanghui; Wang, Xuewen; Ding, Haiyan; Zhang, Ting] Chinese Acad Sci, I Lab, Suzhou
Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.
[Li, Guanghui] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
[Li, Guanghui] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China.
通讯作者地址: Li, GH (通讯作者),Chinese Acad Sci, I Lab, Suzhou Inst Nanotech & Nanobion,
Suzhou 215123, Peoples R China.
电子邮件地址: tzhang2009@sinano.ac.cn
ISSN: 2046-2069
基金资助致谢:
基金资助机构 授权号
National Natural Science Foundation of China 91123034
21107132
Hong Kong, Macao and Taiwan Science & Technology Cooperation Program of China
2012DFH50120
Key Industrial Supporting Project of Jiangsu Province SIP1104PT051
Science and Technology Program of Suzhou SH201010
SYG201144
We acknowledge the funding support from the National Natural Science Foundation of China
(91123034, 21107132), the Hong Kong, Macao and Taiwan Science & Technology Cooperation
Program of China (2012DFH50120), the Key Industrial Supporting Project of Jiangsu Province
(SIP1104PT051), and the Science and Technology Program of Suzhou (SH201010, SYG201144). We
thank the Platforms of Characterization & Test and Nanofabrication of Suzhou Institute of
Nanotech and Nanobionics, Chinese Academy of Sciences.
-------------------------------------------------------------------------------第 234 条，共 234 条
标题: Temperature dependent phonon Raman scattering of Heusler alloy Co2MnxFe1-xAl/GaAs
films grown by molecular-beam epitaxy
作者: Zhan, ZN (Zhan, Zhenni); Hu, ZG (Hu, Zhigao); Meng, KK (Meng, Kangkang); Zhao, JH (Zhao,
Jianhua); Chu, JH (Chu, Junhao)
来源出版物: RSC ADVANCES 卷: 2 期: 26 页: 9899-9903 DOI: 10.1039/c2ra21255b 出版
年: 2012
摘要: Co2MnxFe1-xAl full-Heusler alloy films have been grown on GaAs (001) by molecular-beam
epitaxy. Three representative phonon modes observed from Raman scattering show different
variation trends in the temperature range 87-873 K. The 2F(1u) modes at 569 and 947 cm(-1)
show anomalous change with increasing temperature, which can be due to the phase transition.
The Curie temperature (T-c) can be evaluated as 828 K for x = 0, 823 K for x = 0.3, 818 K for x = 0.7,
and 788 K for x = 1, respectively. This can be ascribed to the fact that the lattice parameter of the
films becomes larger with Mn composition.
语种: English
文献类型: Article
KeyWords Plus: MAGNETIC-PROPERTIES; MANGANESE
地址: [Zhan, Zhenni; Hu, Zhigao; Chu, Junhao] E China Normal Univ, Dept Elect Engn, Key Lab
Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China.
[Meng, Kangkang; Zhao, Jianhua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice &
Microstruct, Beijing 100083, Peoples R China.
通讯作者地址: Zhan, ZN (通讯作者),E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat &
Devices, Minist Educ, Shanghai 200241, Peoples R China.
电子邮件地址: zghu@ee.ecnu.edu.cn
ISSN: 2046-2069
基金资助致谢:
基金资助机构 授权号
Natural Science Foundation of China 60906046
11074076
Major State Basic Research Development Program of China 2011CB922200
Projects of Science and Technology Commission of Shanghai Municipality 11520701300
10DJ1400201
10SG28
Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher
Learning
One of the authors (Z. N. Zhan) is grateful to He He, Qing Ren and Prof. Xiaodong Tang for
technical support. This work was financially supported by the Natural Science Foundation of
China (Grant Nos. 60906046 and 11074076), the Major State Basic Research Development
Program of China (Grant No. 2011CB922200), the Projects of Science and Technology Commission
of Shanghai Municipality (Grant Nos. 11520701300, 10DJ1400201 and 10SG28), and the Program
for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher
Learning.
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