CNBM New Energy Materials Research Center, NJIT, USA
I.
CENTER PERSONNEL
(1)
Staff
Ken K. Chin, Ph. D. (Professor of Physics)
Director
Alan Delahoy, Ph.D. (Res. Professor, formerly VP R&D, EPV)
G. Manager
George Georgiou, Ph.D. (U. Lecturer, formerly Bell Labs)
Pr. Scientist
Halina Opyrchal, Ph.D. (U. Lecturer, formerly Polish Acad. Sci.)
Res. Scientist
(2)
Students (4 Ph.D., 1 M.S.)
Zimeng Cheng
3rd Year Ph.D. Student, Applied Physics
Poonam Karhangarh
3rd Year Ph.D. Student, Applied Physics
Guogen Liu
3rd Year Ph.D. Student, Chemical Engineering
Z. Su
1st Year Ph.D. Student, Applied Physics
Yunfei Chen
2nd Year MS Student, Materials Sci. & Eng.
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II.
CENTER INTELLECTUAL PROPERTIES
1. p-Doping of CdTee Polycrystaline Thin Film Based on Cd Vacancy Theory,
Inventor: Ken K. Chin, U.S. Non-Provisional Patent Application 13/164,836, Filed
June 21, 2011. NJIT Invention ID: 11-061
2. p-Doping of CdTe Polycrystaline Thin Film Based on Cd Vacancy Theory,
Inventor: Ken K. Chin, PCT International Patent Application No.
PCT/US2011/041151, Filed June 21, 2011.
3. METHOD FOR MEASURING IMPURITY LEVELS IN SEMICONDUCTORS
WITH SPATIAL RESOLUTION NJIT Internal Invention Disclosure 12-037 - ,
Inventors: Z. Cheng and Ken K. Chin
U.S. Non-Provisional Patent Application to be filed based on NJIT 12-037
PCT International Patent Application to be filed based on NJIT 12-037
4. Admittance Spectroscopy with Spatial Sensitivity and Determination of Charge
Characteristics of Defect Transition Levels in Semiconductor Junction Space
Charge Rgion, Inventors: Ken K. Chin (Pine Brook, NJ, US), Zimeng Cheng
(Kearny, NJ, US), and A.E. Delahoy (Rocky Hill), NJIT Invention Disclosure
registered Oct. 16, 2012.
5. Back contact for thin-film solar cells, Inventors: A.E. Delahoy, K. Chin, Z.
Cheng, NJIT Invention Id: 13-039, March 2013.
6. Device with Pre-fabricated Material Source for Depositing Semiconductor Thin
Films, Inventors: Z. Cheng, A.E. Delahoy, and Ken K. Chin, NJIT Invention Id: 13041, Mar. 2013.
7. Thin Film Module Structure, Inventor: A.E. Delahoy, Z. Cheng, and K. K. Chin,
NJIT Invention Id: 13-040, March 2013.
8. A Method for Measuring Impurity Levels in Semiconductors with Optical
Injection, Inventors: Zimeng Cheng, Kearney, NJ (US), Alan Delahoy, Rocky Hill,
NJ (US), and Ken K. Chin, Pine Brook, NJ (US); NJIT Invention Disclosure
registered, Feb. 2013.
9. Apollo Trade-Marked Specialty CdTe Material, Inventors: Ken K. Chin and
Jingong Pan, NJIT Invention Disclosure and US patent to be filed.
10. Apparatus and Method to Purify Semiconductor Materials before Deposition,
Z. Cheng, A. Delahoy, K. Chin, NJIT Invention Disclosure, US patent to be filed.
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III.
CENTER PUBLICATIONS
(1)
Published Refereed Journal Articles
8) P. R. Kharangarh1, D. Misra2, G. E. Georgiou1, and K. K. Chin1,
“Characterization of space charge layer deep defects in n+-CdS/p-CdTe solar cells
by temperature dependent capacitance spectroscopy,” J. Appl. Phys. 113, 144504 (6
pages) (2013); http://dx.doi.org/10.1063/1.4800830
7) Zhitao Wang, Zimeng Cheng, Alan E. Delahoy and Ken K. Chin, “A Study of
Light-Sensitive Ideality Factor and Voltage-Dependent Carrier Collection of CdTe
Solar Cells in Forward Bias”, accepted JPV-2012-12-0353-R.R1
6) P. Kharangarh, D. Misra, G. E. Georgiou, and K. K. Chin, “Evaluation of Cu
Back Contact Related Deep Defects in CdTe Solar Cells”, ECS Journal of Solid State
Science and Technology, 1 (5), pp. Q110-Q113, September 2012.
5) Ken K. Chin, "Dual Roles of Doping and Trapping of Semiconductor Defect
Levels and Their Ramification to Thin Film Photovoltaics," J. Appl. Phys., Vol. 111,
000000- 01 - 09 (2012).
4) Ken K. Chin, "Local Charge Neutrality Condition, Fermi Level, and Majority
Carrier Density of Semiconductor with Multiple Localized Multi-Level
Intrinsic/Impurity Defects," Journal of Semiconductors, 32 (11), p. 112001-1-8
(2011).
3) Ji Ma, Su-Huai Wei, and T. A. Gessert, NREL, Golden, CO, USA, and Ken K.
Chin, Apollo CdTe Solar Energy Research Center, NJIT, Newark, NJ, USA,
"Carrier density and compensation in semiconductors with multi dopants and multi
transition energy levels: The case of Cu impurity in CdTe," Phys. Rev. B 83, 245207
(2011).
2) Ken K. Chin, "Approximate Graphical Method for Solving Fermi Level and
Majority Carrier Density of Semiconductors with Multiple Donors and Multiple
Acceptors," J. Semiconductors, 32 (6), p. 062001-1-6 (2011).
1) Ken K. Chin, “p-Doping Limit and Donor Compensation in CdTe
Polycrystalline Thin Film Solar Cells”, Science Direct, Solar Energy Materials and
Solar Cells 94, 1627-1629, Elsevier, May 31 (2010).
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(2) IEEE PVSC (Photovoltaic Specialists Conference)
38th PVSC, Austin TX, June 2011
8) Z. Cheng and K.K. Chin, “The Steady State Occupancy and Effective Fermi
Level of p-n Junction”, Proc. of 38th PVSC, Jun 2012, Austin, TX USA, p. 25.
7) P. Kharangarh, D. Misra, G. E. Georgiou, A. Delahoy, Z. Cheng, G. Liu, H.
Opyrchal and K. K. Chin, “Investigation of defects in n+CdS/p-CdTe Solar Cells”,
presented to 38th IEEE Photovoltaic Conference Proceeding, pp. 1286-1290, Austin,
TX, June 2012.
\37th PVSC, Seattle WA, June 2011
6) Guogen Liu, Zimeng Cheng, Barat, R.B., Jingong Pan, Georgiou, G.E.; Chin,
K.K., “Large area Cds thin film grown by chemical bath deposition”, Proc. of 37th
PVSC, Jun 2011, Seattle, Washington USA, p. 3750.
5) Su-Huai Wei; Jie Ma; Gessert, T.A.; Chin, K.K., “Carrier density and
compensation in semiconductors with multi dopants and multi transition energy
levels: The case of Cu impurity in CdTe”, Proc. of 37th PVSC, Jun 2011, Seattle,
Washington USA, p. 2833.
35th PVSC, Honolulu, June 2010
4) Zimeng Cheng1, Kwok Lo2, Dongguo Chen1, Jingong Pan1, Tao Zhou2, Qi
Wang3, George E. Georgiou1, and Ken K. Chin1, “Working Quantum Efficiency of
CdTe Solar Cell,” (1Department of Physics, Apollo CdTe Solar Energy Center,
NJIT, Newark NJ 07102 USA, 2Department of Physics, NJIT, Newark NJ 07102
USA, 3National Renewable Energy Laboratory (NREL), Golden, CO 80401, 978-14244-5892-9/10, p. 1912-1914, 35th IEEE PVSC, Honolulu, Hawaii, USA (2010).
3) “Local Charge Neutrality Condition, Fermi Level, and Majority Carrier Density
of Semiconductors with Impurity/Defect States of Multiple Energy Levels and of
Multiple Atomic Configurations,” by Ken K. Chin1 and Suhuai Wei 2, 35th IEEE
PVSC Oral Presentation, Pages 878-884, Art no 5614140.
2) “The Roles of Cu Impurity States in CdTe Thin Film Solar Cells,” by Ken K.
Chin1, Tim Gessert2, and Suhuai Wei2, 1 Department of Physics and Apollo CdTe
Solar Energy Research Center, NJIT, Newark, NJ 07058, 2 National Renewable
Energy Laboratory, Golden, CO 80401, 35th IEEVSC, Pages 1915-1918, Art no
5614140.
34th PVSC, Philadelphia, June 2009
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1) “A Novel Concentrator Design with PV Junctions on the Sides of a Flat Panel”,
by Jiansheng Liu1, Jingong Pan2, George E. Georgiou2, Ken K. Chin2, Zheng
Zheng1, Junge Tan1, EEE PVSC34, Philadelphia, USA, June 8-12, 2009, Pages
001127-001131, Art no 5411218.
3) EU PV SEC (European Photovoltaic Solar Energy Conference)
27th EU PV SEC, Frankfurt, Germany, Sept. 2012
5) A.E. Delahoy, Z. Cheng and K.K. Chin, “Carrier Collection in Thin-Film CdTe
Solar Cells: Theory and Experiment” at 27th EUPVSEC, Sep 2012, Messer
Frankfurt, Germany, p. 2837.
4) Z. Wang, Z. Cheng, A.E. Delahoy, K.K. Chin, “New Solar Cell Modeling for
CdTe Solar Cell”, 27th EUPVSEC, Sep 2012, Messer Frankfurt, Germany, p. 2843.
25th EU PV SEC, Valencia, Spain, Sept. 2010
3) Zimeng Cheng, Zhitao Wang, Poonam Kharangarh, Dongguo Chen, Guowei
Wang, Zheng Zheng, Jiansheng Liu, George E. Georgiou, and Ken K. Chin,
“Simulations of Dopants of p-CdTe thin film in n-CdS/p-CdTe Solar Cell” at
2) “Thermionic Emission Theory and Diffusion Theory of Type II p-n Heterojunctions Used in CdTe PV Devices,” by Rumin Zhang1, Jiansheng Liu1, Zheng
Zheng1, Guowei Wang1.G.Georgiou2, Ken.K.Chin2, 1School of Electronic and
Information Engineering, Beihang University, Beijing 100191, China, 2Department
of Physics and Apollo CdTe Solar Energy Center, New Jersey Institute of
Technology, NJ 07058, USA, Proceedings p. 3486, 25th EU Photovoltaic Solar
Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy
Conversion, 6-10 September 2010, Valencia, Spain.
1) “Numerical and Graphical Method for Calculation of Majority Carrier
Compensation of Multiply Doped Semiconductors Used in Photovoltaics,” by
Guowei Wang1, Jiansheng Liu1, Zheng Zheng1, Zimeng Cheng2, Jingong Pan2,
George Georgiou 2, Ken K. Chin2, Proceedings p. 359, 25th EU Photovoltaic Solar
Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy
Conversion, 6-10 September 2010, Valencia, Spain.
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IV.
CENTER R&D FACILITIES
(1)
CdTe Thin Film Solar Cell Processing Lab Major Facilities
Fig. 1 Superstrate (commercially supplied soda-lime glass coated with TCO)
cleaning with DI water
Fig. 2
Glass cutting into proper experimental cell size
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Fig. 3 (a)
CBD (chemical bath deposition) CdS growth facility with de-ionized water
Fig. 3 (b) CBD beaker, hot water bath, and heater
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CSS (close spaced sublimation) CdTe thin film growth chamber:
Fig. 4 (a) CSS chamber with sample (4"x4") transfer and vacuum interlock
Fig. 4 (b) Ultra-high purity graphite CSS with top and bottom temperature control
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Fig. 5 (a) Vacuum annealing chamber for CdS annealing and CdCl2 treatment of
CdTe thin film, with temperature control up to 450°C and various gas input
Fig. 5 (b) WG-20 Mechanical convection oven for lithography
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Fig. 6 Multi-function Veeco thermal evaporation chamber for dry CdCl2 treatment of
CdTe, Cu back contact of CdTe solar cell, and thermal evaporation of
various metals and alloys
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(2)
Solar Cell Characterization Lab Major Facilities
Fig. 7 Optical microscope, resolution 1 
:
Fig. 8(a) Veeco Dek Tak thin film thickness profiler, resolution 1 nm (computer display)
:
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Fig. 8(b) TF thickness profiler of Veeco Dek Instrument
:
Fig. 9
Ellipsometer, thin film thickness and refractive index measurement,
showing laser probe and signal receiver
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Fig. 10 4-point probe for thin film sheet resistance measurement
Fig. 11(a) and Fig. 11(b)
I-V characterization
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Fig. 12 C-V characterization and admittance spectroscopy
Solar illumination simulator---man-made sun, a key instrument for characterization of
solar cell quantum efficiency and aperture optical-electrical conversion efficiency
Fig. 13 (a) Front of the solar simulator
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Fig. 13 (b) Back of the solar simulator showing heat dissipater
Fig. 14 Optical transmission measurement for TCO with CdS layer, and QE
measurement
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Fig. 15 (a) Photoluminescence (PL) characterization facilities with photon
counting
Fig. 15(b) Light collection from photoluminescence
16
Fig. 16(a) Hall effect measurement system (magnet 0.5 T, LN temperature)
for TCO thin film carrier concentration and mobility
Fig. 16(b) Sample holder for Hall measurement
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Fig. 16(c) Electromagnet for Hall measurements on CdTe and TCO materials with
variable field up to 0.8T.
Fig. 17 Stainless steel vacuum dewar for electro-optical measurements
in the temperature range -170C to +150C.
(Set up as shown is for determination of electron mobility-lifetime product in CdTe.)
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Fig. 18 Measurement of thermoelectric power for TCO and CdTe
Fig. 19 DLTS equipment (under construction)
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(3)
NJIT York Center Materials Characterization Laboratories
(payment per service)
Fig. 20 FESEM-EDS Scanning electron microscope (resolution 10 nm)
(LEO 1530VP Field Emission Scanning Electron Microscope with Oxford EDS Detector)
:
Fig. 21 X-ray diffraction (XRD) for thin film crystalline structure characterization
(Philips PW3040 X-Ray Diffractometer)
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Fig. 22 Atomic force microscope (AFM, surface morphology):
Digital Instrument Nanoscope III MultiMode Scanning Probe Microscope
Fig. 23 ICP-MS
(Agilent 7500i Benchtop Inductively Coupled Plasma-Mass Spectrometer System)
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Fig. 24 Alan Delahoy, Research Professor of Physics,
displays an experimental thin-film CdTe solar cell,
with the deposition reactor in the background
Fig. 25 Professor Ken Chin, Center Director lectures on CdTe theory
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