AMPAC
MATERIALS CHARACTERIZATION FACILITY
12443 Research Parkway  Suite 304  Orlando, FL 32826
(407) 882-1500  Fax (407) 882-1502  ampacmcf@ucf.edu
Physical Electronics 5400 ESCA (XPS) (X-ray Photoelectron Spectroscopy)
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Elemental composition
All elements except H and He
Oxidation states
Depth profiling
No specimen preparation necessary
UHV compatible solids, 17 mm diameter
Physical Electronics 600 AES/SAM
(Auger Electron Spectroscopy) (Scanning Auger Microprobe)
Elemental composition
All elements except H and He
Depth profiling
No specimen preparation necessary
 UHV compatible solids, 17 mm diameter
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AES uses an electron beam to excite a sample, and then measures the energies of secondary electrons
emitted. Elemental composition information (and some chemical information) is obtained from the top
few atomic layers. AES detects all elements except H and He and is most effective on electrically
conductive surfaces. Elemental maps can be constructed from the sample to reveal the spatial
distribution of elements on the surface. An attached ion gun allows one to obtain elemental depth profiles
from the sample.
Contact Information:
Engineer: Kirk Scammon
(407) 882-1514
kirk.scammon@ucf.edu
Advanced Materials Processing and Analysis Center
University of Central Florida  Box 162455  Engineering Building I, Room 381  Orlando, FL 32816-2455
(407) 882-1455  Fax (407) 882-1462  ampac@ucf.edu
www.ampac.ucf.edu
AMPAC
MATERIALS CHARACTERIZATION FACILITY
12443 Research Parkway  Suite 304  Orlando, FL 32826
(407) 882-1500  Fax (407) 882-1502  ampacmcf@ucf.edu
Rigaku D/MAX XRD
(X-Ray Diffraction)
 40KV Copper X-ray tube
 Theta, 2 Theta Goiniometer
 Laue Back Reflection Camera Sample holders for both Power and Solid Samples
 Datascan 4 Acquisition Software
 Jade 7 Analysis Software with JCPDS Database
X-Ray diffraction is a technique that measures the intensity of x-rays diffracted by a sample material to
gain information from that material. XRD can determine the crystal structure and lattice parameters of
crystalline materials. Single crystals can be oriented for cutting using XRD. Texture and orientation of
thin films can also be examined. In some cases, residual stress and degree of crystallinity can be
obtained. The JCPDS database can be used for phase identification of unknown samples.
Rigaku D/MAX XRD II
(X-Ray Diffraction)
 40KV Copper X-ray tube
 Theta, 2 Theta Goiniometer
 Thin Film Diffraction Attachment
 Datascan 4 Acquisition Software
 Jade 7 Analysis Software with JCPDS Database
X-Ray diffraction is a technique that measures the intensity of x-rays diffracted by a sample material to
gain information from that material. XRD can determine the crystal structure and lattice parameters of
crystalline materials. Single crystals can be oriented for cutting using XRD. Texture and orientation of
thin films can also be examined. In some cases, residual stress and degree of crystallinity can be
obtained. The JCPDS database can be used for phase identification of unknown samples.
Contact Information:
Engineer: Kirk Scammon
(407) 882-1514
kirk.scammon@ucf.edu
Advanced Materials Processing and Analysis Center
University of Central Florida  Box 162455  Engineering Building I, Room 381  Orlando, FL 32816-2455
(407) 882-1455  Fax (407) 882-1462  ampac@ucf.edu
www.ampac.ucf.edu
AMPAC
MATERIALS CHARACTERIZATION FACILITY
12443 Research Parkway  Suite 304  Orlando, FL 32826
(407) 882-1500  Fax (407) 882-1502  ampacmcf@ucf.edu
Molecular Imaging PicoSPM (STM, AFM)
Scanning Probe Microscopy
 MAC Mode AFM (Magnetic AC mode)
 Electrochemical SPM (EC SPM)
 Conducting AFM (CSAFM)
Scanning Probe Microscopy such as STM and AFM is a high-resolution imaging technique that can
resolve features as small as an atomic lattice in the real space. It allows researchers to observe and
manipulate molecular and atomic level features.
STM (Scanning Tunneling Microscopy) was invented in 1981 by G. Binnig and H. Rohrer who shared
the 1986 Nobel Prize in Physics for their invention. An excellent technique, STM is limited to imaging
conductive materials.
AFM (Atomic Force Microscopy) has much broader potential and application because it can be used
for imaging any conducting or non-conducting surface. AFM has a number of advantages over other
techniques that make it a favorite among leading researchers. It provides easily achievable high
resolution and three-dimensional information in real space with little sample preparation for low cost.
In-situ observations, imaging in fluids are available.
MAC Mode AFM (Magnetic AC mode) is a gentle non-destructive AFM imaging technique, which uses
a magnetic field to drive a magnetically coated cantilever, yielding precise control over oscillation
amplitude and, thus, excellent force regulation. Only the tip is driven. This greatly increases the
signal-to-noise ratio, providing tremendous improvement in fluid imaging. It is particularly useful in
areas that demand high resolution and force sensitivity, such as biology, polymers and surface
science.
Electrochemical SPM (EC SPM) option includes a PicoStat and a complete kit for high-resolution insitu EC SPM experiments. PicoStat offers electrochemists a low-noise potentiostat/galvanostat for insitu EC SPM studies - both EC-STM and EC-AFM.
Conducting AFM (CSAFM) allows users to measure electric current with a conductive cantilever while
doing contact mode AFM. With different preamplifiers, currents from 0.3 pA to 100 nA can be
detected. MI’s CSAFM has been used to measure the conductivity of individual conductive molecules
at molecular resolution.
Contact Information:
Engineer: Mikhail Klimov
(407) 882-1509
mikhail.klimov@ucf.edu
Advanced Materials Processing and Analysis Center
University of Central Florida  Box 162455  Engineering Building I, Room 381  Orlando, FL 32816-2455
(407) 882-1455  Fax (407) 882-1462  ampac@ucf.edu
www.ampac.ucf.edu
AMPAC
MATERIALS CHARACTERIZATION FACILITY
12443 Research Parkway  Suite 304  Orlando, FL 32826
(407) 882-1500  Fax (407) 882-1502  ampacmcf@ucf.edu
Cameca IMS-3F SIMS Ion Microscope (Secondary Ion Mass Spectrometry)
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Depth resolution: ~5nm
Lateral resolution: ~1mkm
Mass resolution (M/delta M): from 200 to more than 10000
Mass range: 0-250 amu
Primary ions: O2+, O-, Ar+, Xe+, Cs+ from 5 to 15kV
Maximum sample size: 1*1*1 cm
Mass analyzer type: magnetic sector
PHI Adept 1010 Dynamic SIMS System (Secondary Ion Mass Spectrometry)
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Depth resolution: ~ 1nm
Lateral resolution: ~ 1mkm
Mass resolution: ~100
Mass range: 0-340 amu
Primary ions: O2+, Ar+, Xe+, Cs+ from 250eV to 8kV
Scanning electron gun allows for bulk insulators analysis
Maximum sample size: 5*5*1cm
 Mass analyzer type: quadrupole
SIMS (Secondary Ion Mass Spectrometry) is an analytical technique that is used to characterize the
surface and near surface (~30mkm) region of materials. It is capable of detecting practically all elements,
including hydrogen (only the noble gases are difficult to measure) with detection limits in ppm range for
most elements and ppb range for some. There are several modes of SIMS instrument operation:
1. Static SIMS – allows molecular as well as elemental characterization of the first top monolayer.
2. Dynamic SIMS – provides for the investigation of bulk composition or the depth distribution of the
trace elements.
3. Ion imaging – allows lateral imaging and, if combined with depth profiling, -3D compositional
reconstruction for heterogeneous samples.
4. Isotope ratio measurement – another unique technique of SIMS making it possible to measure
isotope ratio with precision of 0.1% and better.
SIMS can be applied to any type of material (insulators, semiconductors, metals, and organic molecules)
that can stay under vacuum.
Contact Information:
Engineer: Mikhail Klimov
(407) 882-1509
mikhail.klimov@ucf.edu
Advanced Materials Processing and Analysis Center
University of Central Florida  Box 162455  Engineering Building I, Room 381  Orlando, FL 32816-2455
(407) 882-1455  Fax (407) 882-1462  ampac@ucf.edu
www.ampac.ucf.edu
AMPAC
MATERIALS CHARACTERIZATION FACILITY
12443 Research Parkway  Suite 304  Orlando, FL 32826
(407) 882-1500  Fax (407) 882-1502  ampacmcf@ucf.edu
General IONIX 1.7 MV Tandetron RBS (Rutherford Backscattering Spectroscopy)
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Depth profiling
Film thickness
Stoichiometry
H, He, and Cs sources
Accepts planar solids from ~2 x 2 mm to 25 x 25 mm with no more than 15 mm
Hydrogen Forward Scattering Spectroscopy
RBS analysis is performed by bombarding a sample target with a mono energetic beam of high-energy
particles, typically helium, with an energy of a few MeV. Some of the incident atoms scatter backwards
from heavier atoms in the near surface region of the target material, and are detected with a solid-state
detector that measures their energy. The energy of a backscattered particle is related to the depth and
mass of the target atom, while the number of backscattered particles detected from any given element is
proportional to the concentration. A depth profile of the upper 1-2 m of the sample is possible. The
depth resolution is 2-30 nm. The lateral resolution is 1 mm and the maximum depth is ~2 m (20 m
with H+). The primary applications of RBS are the quantitative composition depth profiling of thin film
structures. RBS is also used to accurately determine the thickness of thin films if the density of the film is
known. Detection limits are 1-10 atomic % for low atomic number elements and 0-100 ppm for high
atomic number elements. All elements except H and he may be detected.
Contact Information:
Engineer: Kirk Scammon
(407) 882-1514
kirk.scammon@ucf.edu
LEICA EM UC7/FC7 Ultramicrotomy: The high quality microtome for precise room temperature
and cryo sectioning.
The Leica EM UC7 prepares excellent quality semi- and ultra-thin sections, as well as the perfectly smooth
surfaces required for LM, TEM, SEM, and AFM examination for biological samples, polymer samples, soft
materials and composites. The precision mechanics, ergonomic design, and intuitive layout of the touch
screen control unit make the Leica EM UC7 ideal for the highest quality specimen preparation by getting
tens nanometers thickness.
The Leica EM FC7 provides three different cryo-modes: Standard; High gas flow – increased LN2 gas
flow reduces ice contamination below -140°C and Wet sectioning - to set a temperature difference of up
to 130°C between knife (-40°C) and specimen (-170°C), which is useful for, e.g., DMSO applications.
Contact Information:
Engineer: TBA
Advanced Materials Processing and Analysis Center
University of Central Florida  Box 162455  Engineering Building I, Room 381  Orlando, FL 32816-2455
(407) 882-1455  Fax (407) 882-1462  ampac@ucf.edu
www.ampac.ucf.edu
AMPAC
MATERIALS CHARACTERIZATION FACILITY
12443 Research Parkway  Suite 304  Orlando, FL 32826
(407) 882-1500  Fax (407) 882-1502  ampacmcf@ucf.edu
Zeiss ULTRA-55 FEG SEM (Scanning Electron Microscopy)
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Schottky field emission source
Resolution 1 nm @ 15 KV, 1.7 nm @ 1 KV
STEM Detector
In lens Secondary and Backscatter detectors
Noran System 7 EDS with Silicon Drift Detector x-ray detector
Nabity Electron Beam Lithography System
The Zeiss Ultra-55 SEM has a unique design to the final lens; it is electrostatic instead of electromagnetic.
This feature allows the microscope to image magnetic materials without distortion from created by a
magnetic field. This microscope is also capable of delivering very high lateral resolution at low voltages.
The Nabity Electron Beam Lithography system allows researchers to create nanometer scale patterns
using the pattern generator in conjunction with the electron beam. The Noran System 7 EDS system with
Silicon Drift Detector can acquire the EDS spectrum much faster than a conventional SiLi detector and
can detect elements as light as Boron.
HITACHI S3500N SEM (Scanning Electron Microscopy)
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Variable pressure SEM
Secondary Electron resolution : 3.0 nm (High Vacuum mode)
Back-scattered Electron resolution : 5.0 nm (Variable Pressure mode)
X15 to x300,000 magnification
Accelerating Voltage: 0.3 to 30 kV
Specimen size: 150mm diameter Maximum
Robinson Backscattered Electron Detector
Infrared ChamberScope
The Hitachi S3500N SEM provides a variable pressure mode of operation that allows microscopy of wet,
oily and non-conductive samples. It has a unique differential pumping system with a real-time vacuum
feedback (RVF) for VP mode. This SEM has automated functions for filament saturation, gun alignment,
brightness, contract and stigmatism.
JEOL 733 Super Probe (Electron Microprobe)
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Four wavelength spectrometers
High sensitivity for light elements
Energy dispersive spectrometer
Automated and remote operation
Multiposition stage holds up to 4 specimens
Accepts specimens up to 32 mm diameter
The JEOL 733 Super Probe is equipped with 4 wavelength spectrometers. Dispersion crystals are
available for the determination of all elements with an atomic number of 5 (Boron) and higher. The lower
limits of detection vary with each element and the sample matrix, but are typically 100 to 200 ppm. The
smallest analyzed volumes are generally 1-2 m3.
Contact Information:
Engineer: Kirk Scammon
407-882-1509
kirk.scammon@ucf.edu
Advanced Materials Processing and Analysis Center
University of Central Florida  Box 162455  Engineering Building I, Room 381  Orlando, FL 32816-2455
(407) 882-1455  Fax (407) 882-1462  ampac@ucf.edu
www.ampac.ucf.edu
AMPAC
MATERIALS CHARACTERIZATION FACILITY
12443 Research Parkway  Suite 304  Orlando, FL 32826
(407) 882-1500  Fax (407) 882-1502  ampacmcf@ucf.edu
FEI Tecnai F30 TEM (Transmission Electron Microscopy)
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Resolution 0.20 nm point to point, 0.102 nm line
10,000,000X magnification STEM
1,000,000X magnification TEM
SEG with hot and cold stages
STEM configuration
High angle annular dark field (HAADF) detector
Electron Holography
Gatan Image Filter (GIF)
The FEI Tecnai F30 is an analytical electron microscope (AEM), which can function as a conventional
transmission electron microscope (TEM) or a scanning transmission electron microscope (STEM). It has a
field emission gun (FEG) and it can operate up to an accelerating voltage of 300KV. It includes both an
energy dispersive x-ray detector (XEDS) and an electron energy loss spectrometer (PEELS) for elemental
analysis. The spot size can be reduced to <0.3 nm for the chemical analysis and micro diffraction studies.
JEOL TEM-1011 (Transmission Electron Microscope)
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LaB6 filament with Cool Beam Illumination System
0.2 nm line resolution and 0.4 nm point resolution
Computer-controlled electron-optical system
Digital image processing
JEM-1011 is a simple, dependable imaging instrument for high throughput of images with excellent
contrast and definition. With an acceleration voltage flexibility of 40 to 100kV, it is suitable for all
biological, polymer and thin materials science specimens. Its high contrast objective lens pole piece
combines the highest possible contrast and brightness with optimum resolution. The JEOL patented cool
beam gun allows high-brightness, high coherence illumination conditions with filament-saving low
emission current. JEM-1011 has a unique feature of 2-specimen holder where two specimens are
introduced into the column at the same time in the “Quick Change” holder, facilitating fast imaging
throughput and instant comparison under the same operating conditions. Other features include user
friendly controls, file storage, automatic filament heating, and automatic exposure micrograph
photography.
Advanced Materials Processing and Analysis Center
University of Central Florida  Box 162455  Engineering Building I, Room 381  Orlando, FL 32816-2455
(407) 882-1455  Fax (407) 882-1462  ampac@ucf.edu
www.ampac.ucf.edu
AMPAC
MATERIALS CHARACTERIZATION FACILITY
12443 Research Parkway  Suite 304  Orlando, FL 32826
(407) 882-1500  Fax (407) 882-1502  ampacmcf@ucf.edu
FEI 200 TEM FIB (Focused Ion Beam Instrument)
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30 kV gallium liquid metal ion source
Accepts specimens up to 5 cm diameter
Ion beam assisted platinum deposition
Iodine enhanced etch
Selective carbon mill etch
Secondary electron and ion images
The 200 TEM FIB removes material by sputtering using gallium at lateral resolution of approximately 5
nm. Platinum metal can also be deposited by ion beam assisted chemical vapor deposition. Gas assisted
etching and selective carbon milling may also be performed. FIB has a wide range of applications:
 Specimen preparation for SEM and TEM. TEM cross-section specimens can be prepared within two
hours.
 Ion channeling contrast imaging
 Device modification – mainly semi-conductor industry
Micro machining – example: trimming AFM tips or drilling patterns to make optical grating or optical
lenses
Contact Information:
Engineer: TBA
Olympus LEXT OLS 3000 Confocal Scanning Microscope
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Plane resolution of 0.12µm (best suite for 1.5mm to 1µm)
Simultaneous 3D and "true color" image acquisition
3-D measurement of 1mm to 0.5µm for volume, capacity, surface area, thickness of a thin
transparent film
Non-contact roughness analysis with resolution of 0.1µm
The LEXT OLS-3000IR is a near-IR laser based confocal microscope LEXT combines a 408nm laser with
optics specifically designed for operation at this wavelength to optimize image quality and limit
aberrations. Olympus software provides a simple user interface, fast processing and advanced analysis in
a single solution. Brightfield, Darkfield and Differential Interference Contrast (DIC) Microscopy techniques
are possible in both video and laser confocal imaging modes. The new confocal laser DIC mode is
especially useful for highlighting subtle textural variations during surface analysis.
Contact Information:
Engineer: Kirk Scammon
(407) 882-1514
kirk.scammon@ucf.edu
Advanced Materials Processing and Analysis Center
University of Central Florida  Box 162455  Engineering Building I, Room 381  Orlando, FL 32816-2455
(407) 882-1455  Fax (407) 882-1462  ampac@ucf.edu
www.ampac.ucf.edu
AMPAC
MATERIALS CHARACTERIZATION FACILITY
12443 Research Parkway  Suite 304  Orlando, FL 32826
(407) 882-1500  Fax (407) 882-1502  ampacmcf@ucf.edu
Renishaw RM 1000B Micro-Raman Spectrometer
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Imaging CCD Detector
Ar-514nm Excitation Unit
Raman spectroscopy is a spectroscopic technique to study vibrational, rotational, and other low-frequency
modes. It relies on inelastic scattering, or Raman scattering of monochromatic light, usually from a laser
in the visible, near infrared, or near ultraviolet range. The laser light interacts with phonons or other
excitations in the system, resulting in the energy of the laser photons being shifted up or down. The shift
in energy gives information about the phonon modes in the system. Raman spectroscopy offers several
advantages for microscopic analysis. Since it is a scattering technique, specimens do not need to be fixed
or sectioned. Raman spectra can be collected from a very small volume (< 1 µm in diameter); these
spectra allow the identification of species present in that volume. Water does not interfere very strongly.
Thus, Raman spectroscopy is suitable for the microscopic examination of minerals, materials such as
polymers and ceramics, cells and proteins.
Contact Information:
Engineer: Mikhail Klimov
(407) 882-1509
mikhail.klimov@ucf.edu
Advanced Materials Processing and Analysis Center
University of Central Florida  Box 162455  Engineering Building I, Room 381  Orlando, FL 32816-2455
(407) 882-1455  Fax (407) 882-1462  ampac@ucf.edu
www.ampac.ucf.edu