Béla PÉCZ
Born: Celldömölk, 1961.08.16.
1985 MSc in Physics, Roland Eötvös University, Budapest, Hungary
1993 Ph.D., Hungarian Academy of Sciences
2004 D.Sc. Hungarian Academy of Sciences
Current Position: Head of the Thin Film Physics Dept. from 01/09/2013
Former position: Deputy director from 01/03/2004 to 31/12/2012
Head of the Thin Film Physics Dept. from 01/01/2000
senior research fellow from 1992
Visits abroad: 1993, 3 month in Oxford at Department of Materials
1994, 6 month in Oxford at Department of Materials
Research topics:
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Electron microscopy
Contacts to compound semiconductors
Growth mechanism of SiC and GaN layers, defect characterisation
Publications: 150 papers received ~1500 independent citations, H-index 22
Selected invited talks:
2001 EMRS Spring Meeting, Strasbourg
2002 EXMATEC, Budapest
2002 ICTF04, Bratislava
2007 ICMCTF, San Diego
2010 JVC13, Slovakia
2014 ICTF16, Dubrovnik
2014 EMRS/V4/Japan workshop, Warszawa
2015 MSM19, Cambridge
Project leader of 6 Hungarian National Research Project OTKA
Hungarian PI of 6 EU FP6/FP7 projects and 1 Office of Naval Research project
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President of the Hungarian Society for Microscopy
Awards:
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Outstanding Young Investigator of the Academy, 1993
Award of the György Ferenczi Foundation, 1996
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Award of the Hungarian Society of Electron Microscopists, 1997
Gyorgy Szigeti Award of the Hungarian Physical Society, 2000
Bolyai Medal, Hungarian Academy of Sciences, 2007
Prize of the Hungarian Academy of Sciences, 2011
Centre for Energy Research, Institute for Technical Physics and Materials Science,
Hungarian Academy of Sciences
1525 Budapest, P.O.Box. 49.
Hungary
Phone: +36 1 3922587
E-mail: pecz@mfa.kfki.hu
5 most important publications:
A. Barna, B. Pécz and M. Menyhard: Amorphisation and surface morphology development at low
energy ion milling, Ultramicroscopy, 70 (1998) 161-171 (IF:
2.244 citations: 68)
B. Pécz, Zs. Makkai, M. A. di Forte-Poisson, F. Huet and R. E. Dunin-Borkowski: V-shaped defects
connected to inversion domains in AlGaN layers, Appl. Phys. Lett. 78 (2001) 1529-1531
(IF: 4.184 citations: 37)
B. Pécz: Contact formation in SiC devices, Appl. Surf. Sci., 184 (2001) 287-294
(IF: 1.222 citations: 35)
B. Pécz, A. El-Shaer, A. Bakin, A.-C.Mofor, A. Waag and J. Stoemenos: Structural characterization of
ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer, J. of Appl. Phys., 100
(2006) 103506 (7 pages) (IF: 2.5
citations: 15)
András Kovács, Martial Duchamp, Rafal E. Dunin-Borkowski, Rositza Yakimova, Péter L. Neumann,
Hannes Behmenburg, Bartosz Foltynski, Cristoph Giesen, Michael Heuken and Béla Pécz:
Graphoepitaxy of High-Quality GaN Layers on Graphene/6H–SiC, Advanced Materials Interfaces,
published online: 22 DEC 2014 | DOI: 10.1002/admi.201400230