TMO-QW-supplement_new

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Supplementary information for

Quantum confinement in transition metal oxide quantum wells

Choi et al.

Fig. S1. Additional STEM-EELS elemental maps of integrated intensities of Ti L (red) edges showing asymmetrical roughness of the STO/LAO interfaces.

Fig. S2. Pseudo-dielectric functions for the three quantum well samples as a function of photon energy.

The oscillator models are shown in solid red, the experimental data in dashed green (real part) and dashed blue (imaginary part).

8.0

7.0

6.0

5.0

Model Fit

Exp <

1

>-E 60°

Model Fit

Exp <

2

>-E 60°

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Photon Energy (eV)

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>-E 60°

Model Fit

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>-E 60°

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Model Fit

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>-E 60°

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Photon Energy (eV)

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Fig. S3. Valence band and core level spectra of LAO and STO substrates used for determining the valence band offset of the quantum well sample. (a) Valence band spectrum of STO substrate showing region used for linear extrapolation. The valence band top is located at an energy of 3.47 eV. (b) Valence band spectrum of LAO substrate showing region used for linear extrapolation. The valence band top is located at an energy of 3.19 eV. (c) Sr 3d spectrum of STO substrate. The Sr 3d

5/2

level has a binding energy of

134.11 eV with a width of 0.88 eV. (d) La 4d spectrum of LAO substrate. The strong component of La

4d

5/2

has a binding energy of 102.81 eV with a width of 1.46 eV.

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Binding energy (eV)

2

138 136 134

Binding energy (eV)

132

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Fig. S4. Core level spectra of 5 uc quantum well sample. (a) Sr 3d spectrum. The Sr 3d

5/2

level is at an energy of 134.10 eV. (b) La 4d spectrum. The La 4d

5/2

level is at an energy of 103.14 eV. The core level separation in the 5 uc quantum well sample is 30.96 eV.

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