Laboratory of Functional Electronics
Head of the laboratory - Tolbanov Oleg Petrovich, post-doctoral degree holder in
Physical and Mathematical Sciences, Professor.
The laboratory aims to develop basic and applied research and development of
competitive high-technologies of semiconductor materials, nanostructures and
components for large industrial and spin-off companies and businesses in the areas
of advanced technologies.
The main directions of research
• Research of patterns and development of competitive technologies in the areas of
semiconductor nanostructures and coordinate detectors for accelerator centers of
particle physics, high energy physics and digital diagnostic systems for various
applications, with parameters surpassing its world counterparts.
• The study of physical and technological bases and conditions of use of diluted
magnetic materials А3 В5 to create elements of spintronics.
• Development of original research methods of electrophysical properties and
characteristics of ultrafast processes in semiconductor low-dimensional structures,
nanoheterostructures with multiple quantum wells and semiconductor elements of
electronic component basis under optical excitation by ultra-short laser pulses.
• Research and development of semiconductor materials, structures and
components for the development of methods of emission terahertz spectroscopy
associated with coherent optical excitation and detection of the temporal profiles of
pulses of terahertz radiation and semiconductor nanostructures as material.
• Research on regular patterns and development of highly sensitive sensors of
various external effects and the sensor of traces of biochemical processes based on
nanostructured metal oxide film and structures formed on related semiconductor
substrates.
 Research on regular patterns and development of materials, structures,
components and elements of monolithic integrated circuit (MIC) and assemblers
for various devices of power and pulsing technique of picosecond performance
and transmit-receive modules of ultra-wideband radar.
The results surpassing all world counterparts
 Completed fundamental studies of gallium arsenide compensated conductivity
by impurity nanoclusters and created unique laboratory technology for production
of detection nanostructures based on GaAs, compensated impurity nanoclusters
with unique characteristics: diameter - up to 3 inches (European standard), the
thickness up to 1.0 mm, resistivity constant is more than 5 * 108 Ohm * cm,
μτ≥10-4 сm2/B (B остается?) for HEMT substrates for substrates of HEMT
technologies, sensors, transducers and photodetectors broad spectral range. The
technology is protected as a trade secret, documented as know-how according to
the order of rector from 26.03.2014 No 213 and put on record.
 Developed laboratory technology of manufacturing of GaAs coordinate
detectors (microstrip and pixel) with a working area of 25 cm2 by the method of
monolithic integrated circuits (MIC) the number of elements in the microstrip
detector up to 1024 and pixel detector up to (768 * 512). The technology is
protected as a trade secret, documented as know-how according to the order of
rector from 26.03.2014 No 213 and put on record.