Date
Ref no:
June 25th 2012
IFM-2012-00305
Last day for submission
of tender
August 31st 2012
Validity of tender
December 31st 2012
Procurement procedure
Open
INVITATION TO TENDER
You are hereby invited to submit a tender for instrumentation for
UHV Magnetron Sputtering System
to the Department of Physics Chemistry and Biology (IFM)
at Linköping University, Sweden
according to the conditions stated in these contract documents.
Ref no IFM-2012-00305
1
GENERAL INFORMATION
1.1
GENERAL INFORMATION
The Nanostructured Materials research Group at the Department of Physics, Chemistry and
Biology, (IFM), at Linköping University (LiU) is going to acquire a multisource UHV magnetron
sputtering system equipped with an additional source port that allows for a possible fitting of a
future arc evaporation source (not included in this tender). The sputtering system will be used for
thin film depositions.
1.2
SCOPE
IFM is a leading materials science environment in Sweden, which extensively utilizes magnetron
sputter deposition and arc evaporation techniques for thin film growth and plasma
characterizations. At present our laboratory features several high vacuum (HV) and ultra high
Vacuum (UHV) magnetron sputter systems, a pulsed arc and a DC arc platform. To date, over 10
PhD:s with a position in our research group as well as in others are also engage in industrial DC
arc evaporation technology to investigate thin films for hard and wear resistance coatings
With the specified deposition system of this tender, we want to establish a deposition facility
within the Nanostructures Materials group to accommodate for possibilities of combining the
research made on sputtered and arc evaporated materials.
Our scientific attention relates to the growth kinetics of ternary and quartenary nitrides/carbides
thin films and nanolaminates sputtered from elemental and/or compound targets in fully
controlled environment in terms of pressure, temperature, ion fluxes and ion energies. Also we
focus on issues related to correlating the sputtering gas plasma properties to the film growth
modes and properties.
The system will primarily be a research tool where the possibility to control deposition fluxes, ion
energy, gas flow, substrate temperature, substrate rotation, deposition geometry, and flexibility of
performing in-situ film characterization e.g., plasma analysis, stress analysis etc. will be prioritized.
The system will be used by PhD students, post-docs, and exam workers etc. having a professional
connection to our research group and the ongoing research activities.
The magnetron sputtering system specified here will enable us to grow multicomponent
functional transition metal nitrides, carbides, and borides thin films as nanocomposites and
nanolaminates with unique structures, phases in metastable materials, interfaces in layered
structures and epitaxial systems. The possibility of adding an arc source to the system will allow
for future studies on a hybrid sputter/arc evaporation growth mode of operation as well as to
investigate sheer cathodic arc processes and its related plasma properties. Finally, the possibility
of flux-energy tuning in angular and areal space by utilizing external ion source will provide a rout
to control film morphology and generate the fundamental understandings of growth kinetics in
complex materials.
A detailed technical specification, stating our minimum requirements on the depostion system in
order to fulfill this scope, is given in Section 3. Manufacturers are, however, encouraged to
suggest additional features to better fulfill the scope of this tender.
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Ref no IFM-2012-00305
CONTRACTING ENTITY
Linköpings universitet
Institutionen för Fysik, Kemi och Biologi (IFM)
SE-581 83 Linköping
Sweden
1.2.1
Contact persons
Name: Maria Bruzelius
E-mail: upphandling@liu.se
If the tenderer wishes clarification of any aspect of the Contract documents, an enquiry must be
submitted in writing to upphandling@liu.se, at such point of time that a response can be
delivered six (6) days before the last day for tender submittal.
Questions asked between week 27-32 will be answered w33.
Enquiries will be answered and published at http://www.liu.se/upphandlingar . The tenderer is
solely responsible for obtaining complete documentation.
1.2.2
Additions/amendments
Complementary additions/amendments will be announced at http://www.liu.se/upphandlingar.
1.3
CONTRACT DOCUMENTS
1.3.1
List of documents
The contract documents consist of the following documents and appendices:
 this document - administrative regulations, qualification of the tenderer and technical
specifications,
 Appendix 1, Public contract (draft)
 Appendix 2, “Tender form/Declaration of truthfulness”
 Appendix 3, ALOS 05 E, General terms for supply of goods to the public sector
The tenderer is solely responsible for obtaining complete documentation according to
this list of documents.
1.4
PROCUREMENT PROCEDURE
This is an open procurement procedure, in accordance with the Swedish law (SFS 2007:1091,
chapter 4) of public procurements (LOU).
1.5
THE TENDER – FORMAL REQUIREMENTS
1.5.1
Validity of the tender
The tender is valid provided that it is:
 signed by an authorized representative of the tendering company,
 submitted no later than August 31st 2012. The tenderer is solely responsible for the timely
arrival of the tender. A tender that arrives later than stipulated, may not be considered,
 valid until December 31st 2012, which explicitly must be confirmed in the tender.
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Ref no IFM-2012-00305
1.5.2
Formality of the tender
Formal requirements for the tenders are as follows:

written in the Swedish or English language,
 submitted in a closed envelope/package marked with Tender and reference number
IFM-2012-00305. Please note that tenders submitted by delivery firms will need the outer
packaging to bear the tender number also,

submitted in one (1) original and two (2) complete copies,

submitted electronically on a CD or USB memory stick
Tenders submitted by fax or e-mail will not be accepted, since confidentiality cannot be guaranteed.
1.5.3
Submission of tender
The tender can either be sent by post, by express or be delivered personally at the address stated
below.
Visiting and express delivery address:
Linköpings Universitet
Registrator, Building Origo
SE-581 83 Linköping
Sweden
Mailing address:
Linköpings Universitet
Registrator
SE-581 83 Linköping
Sweden
Office hours are Monday – Friday 09.00 – 15.00. There is a small mailbox outside the Origo
building were tenders can be delivered, but it is very limited in size (27.5 cm * 3.5 cm). Keep in
mind that tenders are submitted at the risk of the tenderer, and to ensure that the tender can be
submitted correctly, the office hours should be taken into consideration.
The contact person will send a notice of delivery upon opening of received tenders.
1.5.4
Disposition of the tender
To ensure equal treatment and to facilitate assessment of tenders, the tenderer is requested to
follow the order and numbering of this document.
If no statement is made with respect to a requirement, the contracting entity is entitled to interpret this as the
requirement is not fulfilled.
1.6
EVALUATION PROCESS
Before the evaluation process starts, the formal requirements are checked in accordance with 1.5.
If any of those are not fulfilled, the tender in question may not be taken into consideration.
1.6.1
Qualification of the tenderer
The requirements in section 2 are to ascertain that the tenderer has the necessary technical ability
and capacity to fulfil the obligations concerning this public procurement. To qualify, these
requirements have to be fulfilled.
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1.6.2
Examination
The requirements indicated as “must” in section 3-7, will be checked. Only tenders that fulfill all
these requirements will be evaluated further.
1.6.3
Evaluation
The public contract will be awarded to the economically most advantageous tender considering
the award criteria below, listed in order of priority.
Criteria
Criteria
Weight
1. Technical performance and scientific
50 %
potential of the proposed solution
2. Total price
35 %
3. Service, support and warranty
10 %
4. Delivery time
5%
Criterion: 1. Technical performance
The tenders will be evaluated regarding fulfillment of the “should”, “describe” and “specify”requirements, and given points in accordance with the intervals stated at each requirement in the
“Technical specifications”, chapter 3. For each “should”, “describe” and “specify” request the
evaluation of the tender will give a certain number of points, shown by the numbers within
parentheses. Then the tenders will receive a mark between 0 and 50 for the criterion, based on
the formula below:
The tender´s achieved sum of points
x 50
The maximum point sum
Criterion: 2. Total price
Tenders will be ranked with regard to the lowest total price offered.
The total price criterion will be differentiated in a scale of marks where highest mark, 50, is given
for the lowest total price and the remaining tenders will be given marks in relation to the lowest
price as stated below:
Lowest offered price
The tender´s price
x 50
Criterion: 3 Service, support and warranty
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Ref no IFM-2012-00305
Tenders will be evaluated with regard to Service & support, as well as warranty. Points will be
given in accordance with the intervals stated at each requirement in chapter 6.
The tender´s achieved sum of points
x 50
The maximum point sum
Criterion: 4. Delivery time
Tenders will be ranked with regard to the shortest delivery and installation time, conditions for
installation site environment as well as warranty and service. Points will be given in accordance
with the interval stated in chapter 4.
The tenders will receive a mark between 0 and 50 for the criterion, based on the formula below:
The tender´s achieved sum of points
x 50
The maximum point sum
Final result
The total mark for each criterion will be weighted as stated above. The sum of the weighted
marks, as in the formula below, will be the final total mark, which corresponds to the
economically most advantageous tender.
Ptot= Wtech x Ptech+ Wprice x Pprice+ Wservice x Pservice+ Wdelivery x Pdelivery
(P=Points, W=Weight)
1.7
COMMERCIAL SECRECY
In accordance with the Public Access to Information and Secrecy Act (SFS 2009:400
Offentlighets- och sekretesslag) all data pertaining to a procurement matter is subject to secrecy
until an agreement has been entered into or procurement has otherwise been concluded.
Any data mentioned may be subject to secrecy even after the aforementioned time. Note,
however that only in exceptional cases are data and prices according to the evaluation of the
tender considered to be of such nature that they may be held secret for commercial reasons. With
respect to commercial secrecy for the protection of a tenderer’s data, the requirement is that the
data in question refers to the tenderer’s business- or service conditions and that there is a specific
reason to presume that the tenderer will suffer damages if the data is disclosed.
If a tenderer considers the data submitted in connection with this procurement matter fulfils the
aforementioned requirements for commercial secrecy, the tenderer must submit a request for
commercial secrecy, in writing; with clarification concerning the data referred to and what
damage the tenderer would suffer if the data were disclosed.
The decision whether or not the data submitted by the tenderer fulfills the requirements for
commercial secrecy will be made by the Contracting Entity.
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1.8
NOTIFICATION OF DECISION
Prior to signing the public contract, notification of the contracting entity´s decision in this
procurement matter will be sent in writing to all tendering companies.
An appeal for reconsideration of this decision may be made to Förvaltningsrätten (the
Administrative Court) in Linköping. Such an appeal has to be sent within 10 days upon reception
of the decision.
Address: Box 406, SE-581 04 Linköping, Sweden
E-mail: forvaltningsrattenilinkoping@dom.se
1.9
AGREEMENT
Please note that there is no legally binding agreement until a public contract is signed by both
parties.
2
QUALIFICATION OF THE TENDERER
To ensure that the tenderer is suitable as a supplier for the specified procurement, the
requirements below must be fulfilled.
2.1
LEGAL POSITION
According to the Swedish law of public procurement (LOU) the tenderer may not:

Be in bankruptcy or liquidation proceedings, under compulsory administration or subject
to composition or have until further notice ceased making payments or be subject to trade
prohibition.

Be subject to filing for bankruptcy, compulsory liquidation, compulsory administration,
composition or other similar proceedings.

Have been found guilty of unprofessional conduct according to final and conclusive
judgement.

Have been found guilty of serious wrongdoings in professional conduct.

Have failed to fulfill liabilities concerning taxes and social fees.
Furthermore, checks are made that:


The tenderer is registered in the companies’ register, commercial register or similar
register.
The tenderer is registered for reporting and payment of taxes, withheld preliminary tax
and employer fees.
The tenderer must confirm that there are no grounds for exclusion according to the above,
through provision of the documents mentioned below.
Tenderer located abroad
The following national official documents must be enclosed to the tender:
1)
certificate of enrolment in a professional trade register,
2)
certificate that the tenderer has fulfilled obligations relating to the payment of social
security contributions,
3)
certificate that the tenderer has fulfilled obligations relating to the payment of taxes
The information must not be older than 3 months from last day for submission of tender.
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Swedish tenderer
Registreringsbevis from Bolagsverket must be enclosed. The purchaser may check with
Skatteverket and Kronofogden regarding payment of taxes and social security contributions.
The information must not be older than 3 months from last day for submission of tender.
All tenderer
Appendix 2, “Tender form/Declaration of truthfulness” must also be signed and enclosed to the
tender.
2.2
TECHNICAL ABILITY AND CAPACITY
The tender must include description of at least two (2) projects, identical or similar to this one,
executed during the past three (3) years, including references specified with names and telephone
numbers or e-mail addresses for contact persons.
2.3
SUBCONTRACTORS
If the tenderer intends to engage subcontractors to perform certain parts or services, these shall
be stated, and specified in the tender. Documents, as presented in section 2.1, must be appended
for each subcontractor. It is the tenderers responsibility that hired subcontractors comply with
the terms and conditions in the contract. The tenderer is responsible for personnel of the
subcontractor, as if it was their own staff and for any and all work performed by the
subcontractor.
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3
TECHNICAL SPECIFICATIONS
INTRODUCTION
The deposition system specified here will primarily be used to make novel artificially
nanostructured materials in thin film form as described in the Scope (Section 1.2).
In this section, a detailed technical specification, stating our minimum requirements on the
depostion system in order to fulfil this scope, is given. Manufacturers are, however, encouraged
to suggest additional features to better fulfil the scope.
In addition to what is mentioned about the scope of the system, there are some features of the
system that we consider will be of importance for realizing high quality coatings for our research.
In ion-assisted magnetron sputtering the ion bombardment is used for enhancing adatom
mobility on the film surface so as to offer control of film nucleation, coalescence and growth. In
order to make use of the ions available in the sputtering process a substrate bias voltage will be
used to attract ions from the plasma. This requires that the substrate table is electrically isolated
from the rest of the chamber, and connected to an external power supply giving a negative
substrate bias in the range from ground to 150 V. In order to increase the flux of ions to the
substrate, the magnetic field configuration in the magnetron sources need to be unbalanced so
that the magnetic field lines extends out in the chamber, guiding the plasma closer to the
substrate.
For ion assisted growth the ion bombardment on the film surface will be controlled either by a
magnetic coil surrounding the substrate holder and/or by an external ion beam source. The idea
of external ion source is to produce a low energy mono-energetic ion beam with arbitrary
working nobel or reactive gas. The ion energies should be controlled from a few 10 eV up to
about couple of keV.
The system shall be used for sputter deposition of metals as well as reactive sputter deposition of
compounds, such as nitrides, carbides, and oxides. For this purpose, a gas handling system that
can control the gas flows of Ar, N2 and O2 at sputtering pressures up to 10 mTorr is needed.
The dynamics of the film growth and the properties of multilayer thin films are largely influenced
by the residual gas composition in the chamber. Therefore, UHV conditions (corresponding to
background pressures of ~1x10-8 Torr) are required at the moment just prior to commencement
of the depositions, i.e., with the sample rotating and heated to 1000 °C. In order to maintain a
low deposition chamber pressure and to facilitate fast sample changes, a separately pumped loadlock system is necessary.
The deposition system must feature computer-controlled deposition of thin films. This offers
high degree of flexibility to custom tailor the layer/material sequence and individual layer
thicknesses in multilayer thin films, and also assures reproducibility. The computer controlled
parameters, for each layer in a multilayer film must be at least, deposition time, substrate bias,
substrate temperature, and rotation (azimuthal spin). In addition, a computer controlled relay
bank will allow for application of various external electro-magnetic stimulus (such as magnetic
coils and additional biases) to the plasma/substrate, during the growth of each individual layer.
Pumps, vacuum gauges and vacuum gate valves will be integrated into a computer controlled
system that is used to control the vacuum system for automated, fail-safe operation. Computer
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Ref no IFM-2012-00305
control will also allow for logging of growth parameters, vacuum pressures, power supply
settings, etc. during growth.
In the present research areas of growth of nanostructured materials, there is a continuous and
increasing need of in-situ analytical tools for characterization of the growth process as well as for
studies of the films growth, growth surfaces and interfaces. Therefore, the deposition system of
this tender must be prepared with flanges/ports allowing for accommodation of the following insitu characterization possibilities: Reflected high energy electron diffraction (RHEED),
electrostatic and magnetic probe measurements, substrate temperature measurements by optical
pyrometry, multiple laser beam wafer curvature measurement, spectroscopic ellipsometry, optical
emission spectrometry (OES), energy resolved mass spectrometry, and differentially pumped
residual gas analysis (RGA). Please note that the instrumentation for the mentioned in-situ
analytical tools are not included in this tender.
To enable deposition of a wide range of functional layers, e.g., adhesion layers, protective capping
layers, and/or intralayer diffusion barriers in multilayers, from materials different than those
constituting the main thin film or multilayer, at least four magnetron sources, well shielded from
each other to avoid any cross-talk, are required.
For high precision multilayer growth, fast-acting computer controlled source shutters will be used
to control the material fluxes to the substrate. The shutter mechanism must have a very high
reliability to enable accurate depositions of e.g., several thousands of sub-nm layers in one film.
For this application, one solution we envision is a source geometry having a common focal point
of the fluxes. This geometry will also be possible to use for laterally homogenous
multicomponent films, in which case the substrate will spin azimuthally at a rate between 0.1 and
60 rpm.
The sputtering sources need to be designed to allow for magnetic and insulating materials to be
deposited either with DC or RF power. The magnetic field configurations of the magnetrons
must be user modifiable in order to tailor the plasma conditions and allow for difficult materials
(i.e., magnetic and reactive materials). The same arguments also apply for substrate biasing, i.e.,
the biasing feed-through and/or electrical connection of biasing to the substrate holder needs to
be designed to allow for a proper biasing on both conducting and insulating as-grown films either
with DC or RF power.
NOTE: The points given for each “should”, “describe”, and “specify” request show the
maximum points attainable for that item upon evaluation of the tender. The maximum number
of points may only be given to a fulfilled request, accompanied with an adequate description or
specification that allows the evaluators to judge the technical solution (if applicable).
Please, use this document to insert answers and comments to our questions.
SPECIFICATIONS OF THE SPUTTERING SYSTEM
The specification concerns a sputtering system including the following main items:
1. Deposition chamber (chamber, pumping system, pressure measurement, frame and
instrumentation, electronics)
2. Deposition sources and controllers (sputter magnetron sources, power supplies, shutter
assembly, gas flow management system)
3. Arc source (available ports, triggers -future addition)
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4. Substrate holder (rotation, tilt, heater, substrate bias voltage)
5. Low energy mono-energetic plasma/ion beam source(energy, density, geometry,
operational gases)
6. Load lock system (chamber, pumping system, pressure measurement, sample handling)
7. Computer control system (computer control, data logging, monitoring)
8. Options
3.1
3.1.1
A FULLY FUNCTIONING SYSTEM
A fully functioning system
Fulfilled
Yes No
All components and peripherals in terms of hardware and software, with
associated licenses, necessary to achieve the level of integration and technical
specifications stated in the tender, must be included in the offer.
3.2
3.2.1
Deposition chamber
Deposition chamber
The inner diameter of the deposition chamber should be at least 500 mm. Furthermore, the
overall dimension of the deposition chamber should be such to accommodate all features of
this tender as well as to allow for adequate space for service work. Please, specify.
Specify: (0-5p)
3.2.2
Chamber cooling
The chamber walls should be water cooled for improved background pressure during
deposition. Please, specify the suggested solution.
Specify: (0-5p)
3.2.3
Substrate handling
Fulfilled
Yes No
The chamber must be capable of handling substrates with a diameter up to 60
mm substrates with a thickness up to at least 6 mm.
3.3
3.3.1
Magnetrons
Magnetron source ports
Fulfilled
Yes No
The system must be equipped with at least four (4) magnetron source ports
compatible with 75-mm-diameter magnetron sources. Please, Specify.
Specify: (0-5p)
3.3.2
Magnetron sources
Fulfilled
Yes No
The system must be equipped with at least three (3) 75-mm-diameter
magnetron sources compatible with DC and RF sputtering at pressures up to
10 mTorr.
An additional 75 mm magnetron source of the same type for future addition should be
offered separately.
Specify: (0-5p)
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3.3.3
Magnetron power supplies
Fulfilled
Yes No
Three DC magnetron power supplies, including suitable cables and connectors,
capable of delivering at least 1000 V and 750 W must be supplied.
The magnetron power supplies must be interlocked with cooling water flow
gauges.
The power supplies should be capable of delivering more than 1 kW. Please, specify.
An additional DC magnetron power supplies, including suitable cables and connectors, of the
same type for future addition should be offered separately.
Specify: (0-5p)
It should be possible to run the power supplies in constant current, constant voltage and
constant power modes, and automatic arc suppression should be included. Please, specify.
Specify: (0-5p)
3.3.4
Magnetron cooling
Fulfilled
Yes No
The cooling of magnetrons must be monitored by water flow gauges.
Cooling water should not be in direct contact with magnets or the sputtering targets. Please,
specify the proposed solution.
Specify: (0-5p)
3.3.5
Magnetron magnetic configurations
Fulfilled
Yes No
The magnetron sources must have adjustable magnetic configurations. It
should be possible to change the magnetic configuration without breaking
vacuum. Please, specify how this is done.
Specify: (0-5p)
3.3.6
Sputtering configuration
Fulfilled
Yes No
It must be possible to orient the magnetron sources continuously from an allvertical (sputter-up/down) configuration to a confocal configuration. i.e. the
focal point of the magnetrons must be variable.
3.3.7
Magnetron focal points
The minimum distance from the magnetron sources to the focal point should be maximum
150 mm when using 4 magnetrons and maximum 50 mm when using 2 magnetrons. Please,
specify the focal points for these two cases.
Specify: (0-5p)
3.3.8
Magnetron Shielding
The system should include proper shielding to minimize any cross-talk between magnetrons.
The shielding should be electrically isolated from ground, i.e. on a floating potential, and
preferably consist of µ-metal. . Please, specify the design, and the solutions.
Specify: (0-5p)
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3.3.9
Magnetron gas supply
Each magnetron should have individual gas-inlets that can be connected to the gas manifold
system for reactive sputtering and low pressure operation. Please, specify the design of the
gas-inlets.
Specify: (0-5p)
3.3.10
Magnetron shutters
Fulfilled
Yes No
Magnetron shutters, electrically isolated from ground, i.e., on a floating
potential, must be included.
The shutter actuation time must be ≤250 ms.
The shutter actuation time should be ≤100 ms. It should be possible to grow sub nm thin
layers with precise shutter control. Specify the proposed solution.
Specify: (0-5p)
The shutter actuation should be linear. Specify the proposed solution.
Specify: (0-5p)
The shutters should not be of a bellows sealed type. Please, specify the magnetron shutter
solution.
Specify: (0-5p)
3.3.11
Magnetron shutter control
Fulfilled
Yes No
The source shutters must be possible to control by a computer.
3.3.12
Magnetron shutter insulation
Fulfilled
Yes No
The shutters must be electrically insulated from the rest of the system.
3.3.13
Magnetron shutter design
The shutter design should enable a soft action to minimize vibrations and prevent short
circuits due to flakes falling upon the magnetron target surface. Please, specify the shutter
design.
Specify: (0-5p)
3.4
3.4.1
Arc Source
Arc source port
Fulfilled
Yes No
The system will be upgraded in futures with a cathodic arc source. For that the
system must include a 6" CF port on the center of the bottom of the
deposition chamber (arc source port) as well as a 3/4" CF port (trigger port),
positioned 110 mm away (center-to-center) from the above arc source port.
Please, specify the proposed solution.
Schematics of the intended arc source port and trigger port positions.
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Centre of
chamber
(bottom)
110
Arc source port
3.5
3.5.1
Trigger port
Substrate
Substrate azimuthal rotation 
Fulfilled
Yes No
The azimuthal rotation of the substrate must be possible to vary continuously
in the range 0.1–60 rpm.
It should be possible to set the sample azimuth  to a specific angle. Please, specify how
this is achieved.
Specify: (0-5p)
3.5.2
Target to substrate distance
Fulfilled
Yes No
The substrate height Z, and different target-to-substrate distances for both 4magnetron-configuration and 2-magnetron-configuration should be specified.
Specify: (0-5p)
3.5.3
Substrate manipulator implementation
The substrate manipulator azimuthal , and height Z motions should be implemented in a
robust way to avoid wear and minimize the required service. Please, specify the proposed
design.
Specify: (0-5p)
3.5.4
DC substrate bias voltage
Fulfilled
Yes No
It must be possible to apply a negative bias voltage of up to 1.5 kV DC during
simultaneous heating and rotation of the substrate. A voltage regulated power
supply delivering 0-300 V (1 A) DC must be supplied.
3.5.5
RF substrate bias voltage
Fulfilled
Yes No
The substrate holder must be compatible with an RF bias of 100 W.
3.5.6
Substrate heater
Fulfilled
Yes No
A substrate heater including control thermocouple, power supply, feedback
control electronics, and computer control, giving 1000 °C on the surface of a
Si-wafer, as measured by pyrometry, must be included.
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3.5.7
Thermocouple type
The type of thermocouple used for the substrate heater should be specified.
Specify: (0-5p)
3.5.8
Substrate heater oxygen compatibility
The heater should withstand oxygen to some extent. Please, specify the allowed O2 partial
pressures at 600, 800 and 1000 °C.
Specify: (0-5p)
3.5.9
Water cooling of substrate heater
The need of water cooling of the hot parts around the substrate heater should be specified.
Specify: (0-5p)
3.5.10
Substrate heating uniformity
Fulfilled
Yes No
The temperature uniformity (at 800˚C and pressures in the range 1-10 mTorr),
over the central 50 mm of a 60 mm diameter Si substrate must be better than
±25˚C, as measured by an IR pyrometer. Please, specify the temperature
uniformity.
Specify: (0-5p)
3.5.11
Substrate heating stability
The stability of the substrate temperature at 800°C and pressures in the range 1-25 mTorr
should be within ±10˚C during a 20 h period. Please, specify.
Specify: (0-5p)
3.5.12
Substrate coil
The chamber should be prepared with internal support for mounting a coil surrounding the
substrate. Please, specify a detailed drawing of the proposed support configuration.
Specify: (0-5p)
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3.5.13
Substrate shutter
Fulfilled
Yes No
A substrate shutter must be included.
The operation should be computer controlled. Please, specify.
Specify: (0-2p)
3.6
3.6.1
Low energy mono-energetic plasma/ion beam source
Ion source and energy range
An adequate ion source generator should be offered separately.
For the stability and functionality of the ion source the co-extracted electrons should be
velocity-matched to the ion component. The beam should precisely be charge
compensated so that it can be readily applied to the deposition of dielectric films or
dielectric substrates as well as to structures of changing conductivity.
The ion source should be able to tune ion energies between 10-150 eV.
Low energies will be preferred. Please, specify: (0-5p)
3.6.2
Current density
The source should have tunable current density.
As high as 1mA/cm2 current densities at the substrate position will be preferred. Please
specify.
Specify: (0-5p)
3.6.3
Milling rate
The etching/milling rate should be calibrated for standard Si.
Low energies will be preferred. Please, specify: (0-5p)
3.6.4
Beam spot size adjustment
The source should be equipped with in-situ tilting feature which allows for source head angle
adjustment without breaking vacuum.
 Please specify the spot size at different tilt angles and the tilt geometry.
Please specify the port size and position in the chamber with respect to the substarte surface.
Specify: (0-5p)
3.6.5
Gas source
The source should be able to operate with inert and reactive gases e.g. Ar, O2 and N2..
Specify: (0-5p)
16/27
Ref no IFM-2012-00305
3.7
3.7.1
Chamber baking
Chamber baking
The chamber should be bakeable at least at 180 ˚C.
It should be bakeable to higher temperatures. Please, specify.
Specify: (0-5p)
3.7.2
Chamber baking equipment
The baking equipment, including timer and high pressure stop should be included.
3.8
3.8.1
Chamber ports and feedthroughs
Pyrometer port
Fulfilled
Yes No
A pyrometer port (DN40CF), including a window suitable for pyrometer use,
and manual shutter facing the substrate must be included.
3.8.2
Magnetron viewing windows
Fulfilled
Yes No
At least one source viewing window with manual shutter must be included.
It should be possible to see the source-surfaces through this (these) window(s).
Please, specify how the sources can be viewed: (0-5p)
3.8.3
Substrate viewing windows
Fulfilled
Yes No
At least one substrate viewing window (diameter ~100 mm) with manual
shutter must be included.
It should be possible to see the substrate at any of its positions through this (these)
window(s). Please, specify the window layout.
Specify: (0-5p)
3.8.4
Mass spectrometer port
Fulfilled
Yes No
It must be possible to connect an existing mass-spectrometer (Hiden
Analytical PSM003, DN67SF) at the substrate position.
It should be possible to connect an existing mass-spectrometer (Hiden Analytical PSM003,
DN67SF) to the chamber opposite to and directly facing at least one sputtering source.
Please, specify the port layout.
Specify: (0-5p)
3.8.5
RHEED ports
The system should be prepared for measurements using an in situ RHEED (STAIB)
equipment (DN40CF & DN67CE). Ample space outside the ports should be given to fit the
equipment. Please, specify the offered solution.
Specify: (0-5p)
17/27
Ref no IFM-2012-00305
3.8.6
Ellipsometry ports
The system should be prepared for in-situ spectroscopic ellipsometry (J.A. Woolam) with an
incidence angle of 65˚ to the substrate surface normal using stress-free view ports
(DN401CF). Please, specify the offered solution.
Specify: (0-5p)
3.8.7
Stress measurement ports
The system should be prepared with two DN67CF ports, directed towards the substrate at as
steep incidence angles as possible, for in-situ laser deflection stress measurements (kSAMOS). Ample space outside the ports should be given to fit the equipment. Please, specify
the offered solution.
Specify: (0-5p)
3.8.8
Optical emission spectroscopy port
The system should be prepared for optical emission spectrometry through DN40CF ports
facing the magnetron plasma regions. Please, specify the offered solution.
Specify: (0-5p)
3.8.9
Electrical feedthroughs
Fulfilled
Yes No
The system must allow for in situ electrical measurements, e.g. plasma
characterization probes, using 4 electrical feed-throughs withstanding up to 1
kV and 1 A.
3.8.10
Thermocouple feedthroughs
Fulfilled
Yes No
The system must have electrical feed-throughs allowing for at least one
auxiliary internal thermocouple to be connected.
3.8.11
Service port
Fulfilled
Yes No
Easy access to the deposition chamber through at least one service port with a
diameter ≥150 mm must be possible.
It should have more than one and/or a larger service port. Please, specify.
Specify: (0-5p)
3.9
3.9.1
Gas handling
Venting valve
Fulfilled
Yes No
A venting valve for dry nitrogen gas must be implemented with the system.
3.9.2
Gas manifold
Fulfilled
Yes No
A gas manifold for 4 sputter gases must be included (Ar, N2, O2 plus one spare).
18/27
Ref no IFM-2012-00305
3.9.3
Gas manifold isolation
Fulfilled
Yes No
Metal sealed valves must be used to be able to isolate the gas manifold from
the gas sources as well as the deposition chamber.
3.9.4
Mass flow controllers
Fulfilled
Yes No
Mass flow controllers must be included for N2, O2, and Ar providing pressures
of 10 mTorr, 10 mTorr, and 25 mTorr, respectively, with the proposed
pumping system (see below).
3.9.5
Gas purifiers
Gas purifiers producing >99.999998% purity of Ar, N2, and O2 should be included.
Specify: (0-5p)
3.10
Pumping system and pressure measurement
3.10.1
Chamber base pressure
Fulfilled
Yes No
The deposition chamber must be separately pumped and designed for an
ultimate pressure of ≤1×10-9 Torr.
The pressure achievable within 24 h following a 48 h bakeout at 180˚C should be as low as
possible. Please, specify the obtainable pressure.
Specify: (0-5p)
3.10.2
Pump down speeds
The times needed to pump the deposition chamber to 1×10-6 Torr, 1×10-7 Torr, 1×10-8 Torr,
and 1×10-9 Torr should be specified.
Specify: (0-5p)
3.10.3
Chamber pressure during heating
Fulfilled
Yes No
The pressure during substrate heating of a properly cleaned Si wafer to 800˚C
must not exceed 5×10-8 Torr.
3.10.4
Pumping capacity
Fulfilled
Yes No
The pumping system must be able to handle sputtering pressures between 0-25
mTorr. Please, specify how this is achieved.
Specify: (0-5p)
3.10.5
Required gas flow
Fulfilled
Yes No
The highest possible Ar flow needed at 25 mTorr must be specified.
Specify: (0-5p)
19/27
Ref no IFM-2012-00305
3.10.6
Oxygen compatibility
The pumping system should be capable of pumping pure O2. Please, specify the allowed
pressure range.
Specify: (0-5p)
3.10.7
Chamber backing pump
The chamber backing pump should be of an oil-free type. Specify the proposed backing
pump, including the pumping speed.
Specify: (0-5p)
3.10.8
Pump connections
The backing pump will be placed in the basement (approximately 2.5 m from the floor on
which the chamber is placed), specify the requirements to connect the pumps to the
deposition chamber. This connection should be delivered with the system.
Specify: (0-5p)
3.10.9
Pumping line pressures
Fulfilled
Yes No
It must be possible to measure the pressure in the pumping lines.
3.10.10
Valves to prevent back streaming
Fulfilled
Yes No
Necessary valves between the deposition chamber and the pumping system, to
automatically prevent back streaming at power failure or backing pump failure,
should be included. Please, specify.
Specify: (0-5p)
3.10.11
Chamber pressure measurement
Fulfilled
Yes No
The deposition chamber must be equipped with necessary pressure gauges for
accurately measuring the pressure in the chamber at all times, including during
pumpdown.
3.10.12
Capacitance manometer
Fulfilled
Yes No
The sputter gas pressure must be measured with a capacitance gauge.
3.11
Load-lock system
3.11.1
Load-lock system
Fulfilled
Yes No
A complete load-lock system including substrate transfer manipulator(s),
viewports, sample storage, valves, and pumping system must be included.
20/27
Ref no IFM-2012-00305
3.11.2
Load-lock baking
Fulfilled
Yes No
All parts of the load-lock system must be bakeable up to at least 150˚C.
3.11.3
Load-lock base pressure
Fulfilled
Yes No
The ultimate pressure in the chamber must be ≤1×10-7 Torr.
3.11.4
Load-lock pumping
Fulfilled
Yes No
The load-lock chamber must be separately pumped.
3.11.5
Load-lock pumping control
Fulfilled
Yes No
The pump system must include necessary valves and associated control system
in order to prevent back streaming at power failure or backing pump failure.
3.11.6
Load-lock venting
Fulfilled
Yes No
It must be possible to vent the load-lock chamber with dry N2.
3.11.7
Load-lock pumping
The backing pump should be of an oil-free type. Specify the proposed backing pump,
including the pumping speed.
Specify: (0-5p)
3.11.8
Load-lock pumping
Fulfilled
Yes No
Pressure measurement of the load-lock chamber, from atmospheric pressure to
<1×10-7 Torr, must be possible.
3.11.9
Load-lock pump down speed
The time needed to pump the load-lock chamber to 1×10-7 Torr should be less than 30
minutes. Please, specify.
Specify: (0-5p)
3.11.10
Load-lock sample handling
Fulfilled
Yes No
The load lock system must allow introduction and removal of substrates by a
single person.
The sample handling should be as easy and safe as possible. Please, specify the offered
solution.
Specify: (0-5p)
21/27
Ref no IFM-2012-00305
3.11.11
Load-lock door
Access to the load-lock should be by use of a fast entry door. Please, specify the solution for
this.
Specify: (0-5p)
3.11.12
Load-lock sample compatibility
Fulfilled
Yes No
The system must be able to handle substrates compatible with the deposition
system manipulator.
3.11.13
In-vacuum storage positions for at least 4 substrates should be included.
It should contain more than 4 positions. Please, specify the offered solution.
Specify: (0-5p)
3.12
System framework
3.12.1
Sputtering system framework
Fulfilled
Yes No
The frame for the sputtering system must be of an open type, allowing for easy
access to all parts of the chamber and the load-lock.
3.12.2
Electrical installations
Fulfilled
Yes No
Electrical installations on the frame must be placed well separated from water
installations.
3.12.3
Electronic equipment rack
Fulfilled
Yes No
Racks for all instrumentation and control electronics must be provided.
3.12.4
Sputtering system access
Fulfilled
Yes No
If special tools are needed for opening the main flange of the chamber, they
must be included.
If standard tools are used, these should be supplied. Please, specify the tools supplied.
Specify: (0-5p)
3.13
Electronics
3.13.1
Electronics
Fulfilled
Yes No
All necessary electronics including cables and connectors for safe operation of
the system must be supplied with the system.
3.13.2
Controllers
Fulfilled
Yes No
Controllers to pumps, magnetrons, instrumentation for pressure gauges, etc.
must be housed in racks well separated from any water installation.
22/27
Ref no IFM-2012-00305
3.14
Computer control and process monitoring
3.14.1
Computer control
Fulfilled
Yes No
Computer control of the system must be possible.
3.14.2
Computer control interface
Fulfilled
Yes No
The electrical interface used must be based upon a standard. Please, specify.
Specify: (0-5p)
3.14.3
Computer control of major parts
A computer should be able to interface with all major parts on the vacuum system (pressure
gauges, valves, pumps, mass flow controllers, water circuits, power supplies, source shutters,
substrate shutter and substrate heater). Please, specify which parts that are computer
controlled, and in what way each part can be controlled or logged.
Specify: (0-5p)
3.14.4
Data logging and monitoring
It should be possible to log data in a standard format, and in real time monitor the following
parameters: Magnetron powers, substrate bias voltage, substrate temperature, substrate
rotation, substrate tilt, process pressure, gas flow.
Specify: (0-5p)
It should be possible to log the cooling water flow, background pressure, states of valves and
relays (see 3.2.95 below). Please, specify which parameters that are logged.
Specify: (0-5p)
3.14.5
Computer controlled processes and programs
Fulfilled
Yes No
It must be possible to define and stack process layers to create programs. The
program (stack of processes) must be a simple text file which can be exported
and imported into the computer program. Please, specify how deposition
programs are defined.
Specify: (0-5p)
3.14.6
Modification of control software
It should be possible for the user to modify the control software. Please, specify what
features that can be modified and available technical support for such modifications.
Specify: (0-5p)
3.14.7
Software support
Fulfilled
Yes No
Support of the software for 3 years bug-fixing must be included.
Support of the software for bug-fixing of more than 3 years should be included. Please,
specify how many years that are included.
Specify: (0-5p)
23/27
Ref no IFM-2012-00305
3.14.8
Relays
Fulfilled
Yes No
A bank of 16 electrical relays that can be computer controlled to supply various
voltages (up to 150 V) and currents (up to 5 A), via auxiliary power supplies, to
the substrates by the deposition program, must be included.
The relays should be electrically isolated from the chamber (opto-coupled). Please, specify.
Specify: (0-5p)
3.15
Options
The following items must be quoted separately if available, for possible purchasing depending on
financial resources.
3.15.1
Oxygen compatibility
The system should be fully compatible with using oxygen as a sputtering gas. Please, specify
maximum partial pressures of oxygen at 400, 600 and 800 °C.
Specify: (0-5p)
3.15.2
Residual gas analyser
A differentially pumped, computer controlled, residual gas analyzer allowing for monitoring
the gas composition up to 10 mTorr should be included. Please, specify.
Specify: (0-5p)
3.16
Training requirements
3.16.1
Fulfilled
Yes No
An on-site introduction to the system and subsequent appropriate training,
conducted at the Purchaser’s premises (installation site) after approved
installation test (or at a time agreed upon by the parties) must be included in
the total price for a group of 2-4 persons (including all associated costs, travel,
accommodation etc). The training must cover all aspects, i.e., from general
usage to detailed hardware maintenance and troubleshooting as well as all
software components. The content and duration of the training must be
specified.
Specify: (0-3p)
24/27
Ref no IFM-2012-00305
4
DELIVERY AND INSTALLATION
4.1
Delivery time
4.1.1
Fulfilled
Yes
No
The delivery time must be specified. Time for complete delivery must be
stated in weeks. Complete delivery includes installation, set up of operation,
completed acceptance tests, and scheduling of training at Linköping
University. The delivery of the complete system is wanted as soon as
possible. If delivery time is stated in intervals, the longest delivery time will
be evaluated.
Specify time for delivery (0-5 p):
4.2
4.2.1
Factory acceptance test
Customer witnessed acceptance test
Accepted
Yes
No
A customer witnessed factory acceptance test must be made at the factory
site before the system is shipped. The technical specifications given in the
tender must be proven during this acceptance test and the approval
document must be sent to the customer for approval before delivery.
4.3
Site Preparation
4.3.1
Fulfilled
Yes
No
The proposal must state any requirements of the site to make it suitable for
the delivery and installation. The supplier must within the offered price take
full responsibility for the installation and start-up of the delivered
equipment.
LiU will assist with making the necessary extension and connections of
the power, water, and gas supplies to the instruments.
4.4
Installation
4.4.1
Fulfilled
Yes
No
Installation tests must be done on site by the Contractor/manufacturer and
the Purchaser in co-operation, when the delivered equipment is installed in
the laboratory. See draft of public Contract 7.2.
4.4.2
Fulfilled
Yes
No
All equipment delivered must be designed to fit the Swedish electrical
system. Connections must be for 230/220 V AC or 3 × 400/380 V AC, 50
Hz. See public contract Installation 6.2.
25/27
Ref no IFM-2012-00305
4.5
Post installation
4.5.1
Accepted
Yes
No
The tenderer must leave the site in a clean and tidy condition. This includes
the disposal of all crates, packing, packaging and waste materials.
4.6
Acceptance test and sign off
4.6.1
Accepted
Yes
No
The system must pass final acceptance test, on-site at Linköping
University, for each functionality before it is accepted by the University.
The system must be at IFM’s unrestricted disposal for a test period of two
(2) month. The acceptance test should be performed following passed
installation test. See public contract, 7.3.
5
PRICE AND PAYMENT TERMS
5.1.1
Fulfilled
Yes
No
The price for the offered system must be fixed and given in SEK, excluding
Swedish VAT and not exceed 1,9 M SEK, excluding Swedish VAT. The
tender must include the total contract price, given as DAP (INCOTERMS
2010) on-site IFM incl. freight, transport and insurance costs, installation,
setting the system into operation, testing, documentation, training (including
travelling costs) and warranty.
5.1.2
Accepted
Yes
No
Proposals should state the proposed payment schedule for the contract
which will be subject to final agreement with the purchaser. The schedule
must include at least 20 % to be paid following approved final acceptance
test.
5.1.3
Fulfilled
Yes
No
If advance payment is requested, then security in favour of the Purchaser
must be presented in the form of a bank guarantee on demand, along with
the public contract. The bank guarantee must correspond to the value of
the advance and be valid until approved final acceptance. Please see draft
contract (10.3) – Appendix 1.
6
N/A
SERVICE, SUPPORT AND WARRANTY
6.1
Service Engineers
6.1.1
Fulfilled
Yes
No
The user must have the possibility to order service without a signed service
contract for a period of at least 10 years after delivery.
Specify (0 – 3p):
26/27
Ref no IFM-2012-00305
6.2
Spare parts and consumables
6.2.1
Fulfilled
Yes
No
The Purchaser must have the possibility to purchase consumables, for a
period of at least 10 years after delivery.
6.2.2
Fulfilled
Yes
No
The Purchaser must have the possibility to purchase Spare parts, for a
period of at least 10 years after delivery.
6.2.3
Fulfilled
Yes
No
Proposals must state which parts are considered consumables, i.e, typically
in need of replacement within 18 months of continuous operation.
Specify :
6.3
Support
6.3.1
Fulfilled
Yes
No
5 years availability of support by phone or mail must be guaranteed.
6.4
Warranty period
6.4.1
Fulfilled
Yes
No
The warranty time for the delivered system must be at least one (1) year
from final acceptance of the system (pos. 9.1 in the public contract (draft))
and must be a full warranty against defects in material and workmanship.
All costs in connection with guarantee actions are to be borne by the
Contractor including travelling expenses (excluding consumables).
Specify the offered warranty periods (0-5p):
7
7.1
GENERAL
Documentation
7.1.1
Accepted
Yes
No
Detailed documentation in English of all delivered equipment, its operation,
maintenance and service must be included and supplied on delivery.
7.2
Draft contract
7.2.1
Accepted
Yes
No
The included commercial conditions, Appendix 1, are presumed to form the
basis for an agreement between the parties.
Comments:
27/27