Updated: 27 Aug 2012 2.3.3 Basic information of each course/module Table 3. Summary of information on each course/module 1. 2. 3. 4. 5. 6. Name of Course: Electronics I & Labs Course Code: ELEG 2024 Name(s) of Academic Staff: Chan Lih Heng Rationale for the inclusion of the course/module in the programme: The aim of this subject is to provide the student the knowledge of basic electronic theory and study the applications of the semiconductor device. Semester and Year Offered: Semester 4 or 5 Total Student Learning Face to Face Total Guided and Time (SLT) Independent Learning L = Lecture L T P O T = Tutorial P = Practical 42 14 165 O = Others Details of Total Guided and Independent Learning: Learning Activities SLT ( in hours) 1 Lectures (84) a Lecture Hours (Attending Lectures) 3* 14 weeks 42 b Pre and post preparation 3* 14 weeks 42 2 a b Practical Practical hours 1* 14 weeks Pre and Post preparation 1* 14 weeks (28) 14 14 3 a b c d Assessments Quizzes (2 hours + 6 hours preparation) Assignments (8 hours + 8 hours preparation) Mid-term test (2.5 hour + 10 hours preparation) Final Examination (2.5 hours + 14 hours preparation) (53) 8 16 12.5 16.5 Total Subject Credit ( 165/ 40 = 4.125) 7. 8. 9. 165 4 Credit Value: 4 Prerequisite (if any): ELEG 2013 Electric Circuits I Objectives: CO 1: To equip students with understanding on the principle and applications of analogue electronic devices and circuits CO 2: To equip students with design techniques of simple electronic circuit CO 3: To lay a foundation for further studies in electronic devices Updated: 27 Aug 2012 10. 11. 12. 13. 14. 15. 16. 17. Learning Outcomes: On completion of the course, students will be able to: CLO1: Understand the physical process of the semiconductor, diode, BJT and FET CLO2: analyze basic electronic circuit utilizing diode and zener diode CLO3: Perform dc and ac analysis for different types of BJT amplifiers CLO4: Perform dc and ac analysis for different types of FET amplifiers CLO5: Apply hands –on experiment of simple circuits utilizing diode and transistor. Transferable Skills: On successful completion of this module, the student will be able to: Apply dc and ac analysis on basic amplifier applications. Teaching-learning and Assessment Strategy: The assessment will base on assignment, test and final examination. Synopsis: Introduction to electronic circuit; study of the electronic components Mode of Delivery: Lecture, assignment, tutorial Assessment Methods & Types: Quizzes – 10% Assignment – 15% Mid-Term Examination – 30% Final Examination – 45% Mapping of the Course/Module to the Programme Aims: Programme Objectives 1 Programme Objectives 2 CO1 √ √ CO 2 √ √ CO 3 √ √ Programme Objectives 3 Mapping of the Course/Module to the Programme Learning Outcomes: MQA Domain PO 1 CLO 1 √ CLO 2 √ √ √ CLO 3 √ √ √ CLO 4 √ √ √ CLO 5 √ √ √ 2 3 4 5 6 7 8 Updated: 27 Aug 2012 18. Content outline of the course / module and the SLT per topic 1) Semiconductor materials Intrinsic & extrinsic semiconductors n- & p- type Atomic structure Physical process: Majority and minority carrier, forward bias and reverse bias, depletion region Diode characteristic 2) Diode analysis applications Load-line analysis, region of operation Approximate & ideal models. Diode circuits Applications: a) Rectifiers -Half wave -full wave -bridge b) Clipper c) Clamper Zener diode and regulator circuits 3) Bipolar Junction Transistors N-p-n and p-n-p type Physical process of the BJT: Majority and minority carrier, forward bias and reverse bias, depletion region BJT parameters: α and β BJT characteristic curve CE; CB & CC circuit configurations Different types of the dc biasing a) fixed bias b) emitter stabilized bias c) voltage divider bias d) voltage feedback Stability of the quiescent point 4) BJT small-signal analysis re transistor modeling Small signal analysis: a) Common emitter fixed bias b) Voltage divider c) Common base d) Common collector Lecture Practical Assessmen ts L H 4 P L 4 PH PP 9 9 8 8 9 9 3 3 9 9 PA AH Updated: 27 Aug 2012 Amplifier proper ties calculation a) Input impedance b) Output impedance c) Voltage gain 5) Field-effect transistors Two main types of FET’s: JFET & MOSFET. Physical structure and biasing FET biasing: a) Fixed bias b) Self-bias c) Voltage divider bias d) Depletion-Type MOSFET e) Enhancement-Type MOSFET 9 9 3 3 9 9 6) FET small-signal analysis FET small signal model JFET: a) Fixed bias b) Self-bias c) Voltage divider d) Source follower (Common drain) E-MOSFET a) Drain feedback b) Voltage divider Quizzes 6 2 Assignments 8 8 2.5 Mid-Term Exam 10 2.5 Final Exam 14 15 Sub Total 42 42 14 14 38 Total 165 Credit 3 Note: LH : Lecture Hours PL: Pre and Post Preparation for Lecture TH : Tutorial Hours PT: Pre and Post Preparation for Tutorial PH: Practical Hours PP: Pre and Post Preparation for Practical AH: Assessment Hours PA: Pre and Post Preparation for Assessment(Assignments, Test or Final Examination) Updated: 27 Aug 2012 19. - Main References Supporting the Course: Robert Boylestad, Louis Nashelsky. Electronic Devices and Circuit Theory, (11th Edition). Prentice-Hall, 2012. - Additional references supporting the course: Earl Boysen, Harry Kybett. Complete Electronics Self-Teaching Guide with Projects. (4th Edition). Wiley, 2012. Charles Platt. Make: Electronics (Learning by Discovery). (1st Edition). Make, 2009. Rubita Sudirman, Puspa Inayat Khalid, Siti Hawa Rusla. Electronic Devices & Circuits. Penerbit UTM Press, 2010. 20. Other Additional Information: - No. Title 1 Series diode 2 3 4 Rectifier Clamper and Clipper Zener diode 5 BJT 6 FET Objectives To analyze diode characteristic in a simple circuit a) Polarity b) Voltage required by diode to be “on” To investigate behavior of rectifier To investigate behavior of clamper and clipper To investigate zener diode characteristic (avalanche) To observe voltage regulation by zener diode. To analyze BJT input and output characteristic To examine simple amplifier circuits To analyze FET characteristic To examine simple amplifier circuits Total Duration (hours) Week 2 3rd 2 2 5th 6th 2 7th 3 9th 3 12th 14 Hours