Supporting information.
Nanofluidic electrokinetics in nanoparticle crystal
Zhen Chen
College of Chemistry and Molecular Engineering, Peking University,
Beijing 100871, China
Yunshan Wang
Institute of Microelectronics, Peking University,
Beijing 100871, China
Prof. Wei Wang and Prof. Zhihong Li
Institute of Microelectronics, National Key Laboratory of Micro/Nano Fabrication
Technology, Peking University,
Beijing 100871, China
Corresponding author email: w.wang@pku.edu.cn
Stacking structure and the element extraction.
Figure S1 shows the relative vertical position of the layers of nanoparticles and
interstices. For clarity, only two layers of solid spheres are shown. If the two adjacent
layers of nanoparticles are denoted as AB, Figure S1a shows a layer of tetrahedral
interstices that take the “a” positions while Figure S1b shows a layer of tetrahedral
interstices that take the “b” positions. A planform of Figure S1c (not shown) could
demonstrate that the center of the octahedron takes the “c” position. Figure S1e shows
the resistance element extracted from the layers-structure. Each element contains two
layers of tetrahedral sites and one layer of octahedral sites (the upper and bottom layer
is counted with a coefficient of 1/2). Meanwhile, because each element has one layer
of nanoparticles (Figure S1e), the layer of nanoparticles equal to the number of the
resistance element.
Figure S1. The side-view of two layers of close-packed nanoparticles. (a), (b), (c)
illustrates the interstices formed by the adjacent layers of nanoparticles. (d) shows the
relative vertical position of the layers. (e) shows a resistance element between two
layers of octahedral interstices, just as the discussion in the text.