IISc solidification lecture 2

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Solidification, Lecture 2
NTNU
Nucleation
Homogeneous/heterogeneous
Grain refinement
Inoculation
Fragmentation
Columnar to equiaxed transition
Crystal morphology
Facetted – non-facetted growth
Growth anisotropy / growth mechanisms
Modification of Al-Si and cast iron
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Nucleation
NTNU
Spontaneous formation of new
crystals
Cluster formation
Homogeneous nucleation
Number of clusters with radius r:

nr  n0 exp 
Gr
kT

Gr cluster free energy
n0 total number of atoms
k Boltzmans constant
T temperature
2
Nucleation activation energy
NTNU
Change in free energy
solidification
s/l interface
4 3
G  r g  4r 2
3
Spontaneous growth 2
above radius r* 
s f T
Activtion
energy

3
16

G* 
3s2f (T)2
3
Nucleation
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Rate
B
N  A exp( 
2)
(T)
Undercoooling

nr  n0 exp 
Gr
kT

r* 
2
s f T


4
Heterogeneous nucleation
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Nucleation on solid substrate
Reduction of nucleation barrier
Wetting angle θ
Ghet  Ghom f ()
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Conditions for efficient nucleation
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• Small wetting angle, 
• Low surface energy between substrate and crystal
• Good crystallographic match
Lattice match between
Al and AlB2
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Nucleation on AlB2 substrate
particles, inoculation
NTNU
AlB2
AlB2 addition
No addition
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Nucleation and growth in a pure metal
NTNU
T
Recallescence
Growth
Tg
Nucleation
Tn
Undercooling ahead of
solidification front is
needed for nucleation
of new grains.
Can be achieved by
alloying.
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Conditions for grain refinement
•Substrate particles
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•Undercooling
•Potent
•Constitutional
•Large number
•Growth restriction
•Well dispersed
•Strongly segregating
alloying elements
A pure metal can not be efficiently grain refined!
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Growth restriction in aluminium
NTNU
Q  mC0 k 1
Element
m(k-1)
max C0 (wt%)
Ti
Si
Mg
Fe
Cu
Mn
246
6.1
3.0
2.9
2.8
0.1
0.15
12
35
1.8
33
1.9
10
Aluminium grain refiner master alloys
NTNU
Typical composition: Al-5%Ti-1%B
Formation of insoluble TiB2
Ti/B ratio in TiB2 : 2.2/1
Small TiB2
1-3 m
Large TiAl3
10-50 m
50 m
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Grain refinement of aluminium
NTNU
X-ray video of Al-20%Cu
Al-5%Ti-1%B type grain refiner
Addition 1g / kg melt
Growth from top
Dendrite coherency – network
formation
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Substrate particle size, d
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4
d
s f T
Too small particles will
need high
underecooling
T
T for
for Grain
Grain Initiation
Initiation (K)
1
0.8
0.6
0.4
0.2
0
0
2
4
6
Particle Diameter (m)
8
13
Industrial grain refinement practice
NTNU
Alcoa
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Dendrite fragmentation
NTNU
X-ray video of Al-20wt%Cu
Growth of collumnar front
Dendrite fragment by melting
Formation of new grain
New front established
New fragments melt
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Columnar-to-equiaxed transition;
dendrite fragmentation
•
Fragmentation mechanism
– Mechanical fracture
– Melting
•
Transport of fragments out of mushy zone
– Gravity/buoyancy
– Convection - stirring
•
Survival and growth of dendrite fragments
– Low temperature gradients
– Constitutional undercooling
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Electromagnetic stirring of steel
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Stirring gives
larger fraction
of equiaxed
grains
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Growth
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Controlling phenomenon
Importance
Driving force
Diffusion of heat
Pure metals
ΔTt
Diffusion of solute
Alloys
ΔTc
Curvature
Nucleation
Dendrites
Eutectics
ΔTr
Interface kintetics
Facetted crystals
ΔTk
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Interface morphology
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• Facetted
• Atomically smooth
• =sf /R>2
• Non-metals
•Intermetallic phases
• Non-facetted
• Atomically rough
• =sf/R<2
• metals
Reproduced from:W. Kurz & D. J. Fisher:
Fundamentals of Solidification
Trans Tech Publications, 1998
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Facetted crystals
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•
•
•
•
•
Atomically smooth interface
Large entropy of fusion
Growth by nucleation of new atomic layers
Large kinetic growth undercooling, ΔTk
Large growth anisotropy
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Growth anisotropy
NTNU
Cubic crystal bounded by (111) planes
Growth of (100)
Bounded by (110) planes
Growth of (100)
Reproduced from:W. Kurz & D. J. Fisher:
Fundamentals of Solidification
Trans Tech Publications, 1998
•Fastest growing planes disappear
•Crystals bounded by slow growing planes
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Growth anisotropy
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Anisotropy increases with α
V  K(hkl )Tk

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Growth mechanisms
NTNU
Twinning or dislocation:
Nucleation of new planes not necessary
Screw
dislocation
Twinning
Reproduced from:W. Kurz & D. J. Fisher:
Fundamentals of Solidification
Trans Tech Publications, 1998
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Growth rate
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V  K 2 (Tk )2
V  K1Tk

K4
V  K 3 exp( 
)
Tk

Reproduced from:M. C. Flemings
Solidification Processing
Mc Graw Hill, 1974

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Modification of growth mechanism
Eutectic silicon crystals in Al-Si
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Transition from coarse lamellar
to fine fibrous eutectic
Improves ductility
Addition of small amounts
(100 ppm) of Na, Sr, (Ca, Sb)
Increases porosity
100 ppm Sr
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Mechanism of modification
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Atoms of modifier
causes growth branching
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Modification and growth undercooling
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Eutectic growth
temperature
decreases about
10 K.
Fading due to
oxidation of
modifier.
Faster fading
with Na than Sr
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Modification of graphite in cast iron
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Small additions of Mg and FeSi to cast iron changes morphology
of facetted graphite from flakey to nodular
Effect of both nucleation and growth mechanism
Grey cast iron
Ductile iron
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Summary / conclusions
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• Spontaneous formation of solid clusters. Homogeneous nucleation
• Energy barrier due to s/l interface large at small crystal sizes. Needs
undercooling
• Heterogeneous nucleation on solid substrate. Lower activation energy
– lower undercooling
• Low wetting angle – potent substrate for nucleation – good
crystallographic match between substrate / growing crystal
• Undercooling ahead of growing front necessary for nucleation of new
equiaxed grains. Provided by strongly segregating alloying elements
• Efficient grain refinement can be achieved in aluminium alloys by
inoculation of substrate particles, TiB2 and Ti for growth restriction
• Substrate particles must not be too small. That will give large
undercooling.
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Summary / conclusions
NTNU
• Columnar to equiaxed transition – grain refinement can be achieved
by fragmentation of columnar dendrites. Provided by convection.
Transport out of M.Z and survival in undercooled melt at low
temperature gradient.
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Summary / conclusions
NTNU
• Metals have low entropies of fusion and grow in a non-facetted way
with an atomically rough interface
• Non-metals and intermetallic compounds have normally high fusion
entropies and grow in a facetted way with a smoth interface.
• Growth of facetted crystals occurs by successive nucleation of new
atom planes at high kinetic undercooling
• Facetted crystals show large growth anisotropy. Fast growing planes
disappear while slowest growing planes bounds the crystals
• Facetted crystals often provide nucleation sites for new atom planes at
twin boundaries or screw dislocations
• Growth rate of non-facetted crystals is proportional to kinetic
undercooling. Dislocation growth shows a parabolic law and growth by
two-dimensional nucleation an exponential growth law
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Summary / conclusions
NTNU
• Growth mechanisms in facetted crystals can be very sensitive to
impurities. Can be utilised for modification of morphology, Examples
are modification of Si in Al-Si by Na or Sr and modification of graphite
in cast iron eutectics by Mg.
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