Memory Testing and Pattern Introduction

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Memory Testing and

Pattern Introduction

TM

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This document is strictly confidential and proprietary of SMIC. It must not be copied or used for any purpose other than for reference only, and SMIC shall not be liable or responsible for any reliance.

Contents

Brief Introduction

Memory Classification and Application

How to Test Memory IC

Pattern Introduction

Scramble

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Memory IC Testing

• For storage media (memory): not magnetic tape, not hard/floppy disk, not brain

• For silicon process: not WAT test, not reliability test, not physical failure analysis

• For IC testing: not logic (ASIC, CPU, FPGA, LCD driver, …) not mix-signal (ADC, DAC, USB, …)

For test program: not timing, not pin format, not hardware configuration not command to generate report, not user interface

• We focus on: electrical failure analysis, (memory IC) function test, test pattern

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Memory Classification

• Volatile memory: data will lose after power off

SRAM (static random access memory):

Low Power (or Low Voltage) SRAM / High Speed SRAM

DRAM (dynamic RAM, need refresh):

Synchronous DRAM / Double Data Rate (DDR) SDRAM

FCRAM (FJ, Fast Cycle RAM): DRAM cell with SRAM peripheral

• Non volatile memory: data still keep after power off

ROM (read only memory) / PROM (programmable ROM)

EPROM (Erasable PROM) / EEPROM (Electrical EPROM)

Flash

• Embedded Memory : some of above memories are merged with some logical purpose circuit on a chip

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Memory Application

LP-SRAM: mobile phone

• HS-SRAM: cache memory

• DRAM: phase out

• SDRAM / DDR SDRAM: mother board / graphic card

ROM / PROM / EPROM: game machine / BIOS

EEPROM / Flash: smart card / voice recorder

FCRAM(FJ): mobile phone

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Special Testing Feature

• SRAM: typical memory function (Write and Read)

• DRAM: row and column address are multiplexed, need refresh

• SDRAM: need one synchronous clock, pipe-line (burst) concept

DDR SDRAM: one cycle two data, write latency, DLL on/off

FCRAM: need some test mode to access the DRAM cell

• ROM: need SOM (source only memory) board of tester, read only

• EEPROM / Flash: read / program / erase all / page mode address and data are multiplexed, BUSY signal

Embedded Memory: in general, several hundreds pins, so we need customer provide more detailed or confidential document about the memory-related, only around fifty pins information to run a specified sequence to enter the direct access mode

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From the PC BIOS’s View

• For the PC with 256M bytes SDRAM (the simplest way, mail box) write all 0x00, read all 0x00 be visited 2 times write all 0xFF, read all 0xFF be visited 2 times write all 0x55, read all 0x55 write random, read random

0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0

0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0

:

: :

:

…..

…..

be visited 2 times be visited 2 times, total 8 times

L L L L L L L L L L L L L L L L

…..

L L L L L L L L L L L L L L L L

…..

:

: :

:

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1

:

:

:

:

…..

…..

0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1

0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1

:

: :

: write random data 1 write random data n

:

: write random data 2 write random data n+1

:

:

…..

…..

…..

…..

H H H H H H H H H H H H H H H H

…..

H H H H H H H H H H H H H H H H

…..

:

: :

:

L H L H L H L H L H L H L H L H

…..

L H L H L H L H L H L H L H L H

…..

:

: :

: read random data 1 read random data n

:

: read random data 2 read random data n+1

:

:

…..

…..

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What We Say the “Testing”

• For the 16Mx8 bits SDRAM

1. In general, when we are debugging or creating a pattern, we always just consider one DQ only.

2. In order to get good fault coverage and measure almost all the device feature listed on data sheet, a test program will access

1024 : : : : each bit more than several hundreds times, not only few times

DQ8 0 0 0 …..

0 0

DQ7 0 0 0 …..

0 0 0

DQ6 0 0 0 …..

0 0 0 :

DQ5 0 0 0 …..

0 0 0 : :

DQ4 0 0 0 …..

0 0 0 : : :

DQ3 0 0 0 …..

0 0 0 : : : 0

DQ2 0 0 0 …..

0 0 0 : : : 0

DQ1 0 0 0 …..

0 0 0 : : : 0

0 0 0 …..

0 0 : : : 0

: : : : 0 bit : : : : : : : 0 lines : : : ….. : : : 0

0 0 0 …..

0 0

DQ1 to DQ8 are accessed in the same time for every address

DQn 0 0 0 …..

0 0

0 0 0 …..

0 0

1024 : : : :

16384 word lines

: : bit : : : : : : lines : : : ….. : : :

0 0 0 …..

0 0

16384 word lines

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Elements of Pattern

• the most important is address and data : simple simple pattern: memory command W W W W W W R R R R R R

1 2 3 address

4 5 6 data

1 2 3 4 5 6

0 0 0 0 0 0

1 2 3 4 5 6

0 0 0 0 0 0 command W W W W W W R R R R R R address 1 2 3 4 5 6 1 2 3 4 5 6 data 1 1 1 1 1 1 1 1 1 1 1 1

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Pattern Classification

• For written data (background data): solid 0/1, row bar, column bar, checker board, diagonal, DQ switch, RWI (repeat with invert)

For cell visiting sequence ( address changing): write-verify, scan X/Y, march4n, march6n, inverse, address complement, RWI

Take too long time and less use galloping, butter-fly, shift diagonal --- n^2

• For DRAM special: disturb, Long RAS

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Background Data

• In testing world: X is ROW is WL (word line),

Y is COLUMN is BL (bit line) solid 0

0 0 0 0

0 0 0 0

0 0 0 0

0 0 0 0 row bar

0 1 0 1

0 1 0 1

0 1 0 1

0 1 0 1 column bar 2 column bar checker board

0 0 0 0

1 1 1 1

0 0 0 0

1 1 1 1

0 0 0 0

0 0 0 0

1 1 1 1

1 1 1 1

0 1 0 1

1 0 1 0

0 1 0 1

1 0 1 0 solid 1 row bar RWI column bar RWI diagonal checker board RWI

1 1 1 1

1 1 1 1

1 1 1 1

1 1 1 1

1 0 1 0

1 0 1 0

1 0 1 0

1 0 1 0

1 1 1 1

0 0 0 0

1 1 1 1

0 0 0 0

1 0 0 0

0 1 0 0

0 0 1 0

0 0 0 1

1 0 1 0

0 1 0 1

1 0 1 0

0 1 0 1

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DQ Switch (polarity) solid 0 with 0x00

DQ8 0 0 0 …..

0 0

DQ7 0 0 0 …..

0 0 0

DQ6 0 0 0

…..

0 0 0 :

DQ5 0 0 0 …..

0 0 0 : :

DQ4 0 0 0 …..

0 0 0 : : :

DQ3 0 0 0

…..

0 0 0 : : : 0

DQ2 0 0 0 …..

0 0 0 : : : 0

DQ1 0 0 0 …..

0 0 0 : : : 0

0 0 0

…..

0 0 : : : 0

: : : : : : : : 0

: : : : : : : 0

: : :

….. : : : 0

0 0 0 …..

0 0 checker board with 0xAA no tester (ALPG) can do this with 0x69

DQ8 1 0 1 …..

1 0

DQ7 0 1 0 …..

0 1 1

DQ6 1 0 1

…..

1 0 0 :

DQ5 0 1 0 …..

0 1 1 : :

DQ7

DQ6

DQ8 0 0 0

0 1 0

0 1 0 …..

…..

…..

0 0

0 1 1

0 1 1 :

DQ5 0 0 0 …..

0 0 1 : :

DQ4 1 0 1 …..

1 0 0 : : :

DQ3 0 1 0

…..

0 1 1 : : : 1 1

DQ2 1 0 1 …..

1 0 0 : : : 0 0

DQ1 0 1 0 …..

0 1 1 : : : 1 1

1 0 1

…..

1 0 : : : 0 0

DQ4

DQ3

DQ2

0 0 0

0 0 0

0 1 0

0 1 0

…..

…..

…..

…..

0 1 1 : : :

0 0 1 : : : 1 col bar

0 0 1 : : : 1

0 1 : : : 1 col bar row bar

DQ1 0 1 0 …..

0 1 1 : : : 1 row bar

: : : : : : : : 1 1 : : : : : : : : 1 row bar

: : : : : : : 0 0

: : :

….. : : : 1

1

1 0 1 …..

1 0 0

: : : : : : : 1 col bar

: : : ….. : : : 1 col bar

0 1 0 …..

0 1 row bar

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X-Fast vs. Y-Fast simple memory

1 2 3

4 5 6

X-Fast: command W W W W W W address 1 2 3 4 5 6 data 1 1 1 1 1 1

Y-Fast: command W W W W W W address data

1 4 2 5 3 6

1 1 1 1 1 1

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Write Solid1 and RWI simple memory

1 2 3

4 5 6 write solid1: command W W W W W W address data

1 2 3 4 5 6

1 1 1 1 1 1 write solid1 and repeat with invert: command W W W W W W W W W W W W address data

1 2 3 4 5 6

1 1 1 1 1 1

1 2 3 4 5 6

0 0 0 0 0 0

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Scan vs. Write Verify simple memory

1 2 3

4 5 6

Scan-X (write-read): command W W W W W W R R R R R R address 1 2 3 4 5 6 1 2 3 4 5 6 data 0 0 0 0 0 0 0 0 0 0 0 0

Write Verify: command W R W R W R W R W R W R address 1 1 2 2 3 3 4 4 5 5 6 6 data 0 0 0 0 0 0 0 0 0 0 0 0

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Scan to March-4n simple memory

1 2 3

4 5 6

MarchX-4n: command W W W W W W R W R W R W address 1 2 3 4 5 6 1 1 2 2 3 3 data 0 0 0 0 0 0 0 1 0 1 0 1 then: command R W R W R W R R R R R R address data

4 4 5 5 6 6 1 2 3 4 5 6

0 1 0 1 0 1 1 1 1 1 1 1

Scan-X: command W W W W W W R R R R R R address data

1 2 3 4 5 6 1 2 3 4 5 6

0 0 0 0 0 0 0 0 0 0 0 0

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March-6n simple memory

1 2 3

4 5 6

MarchX-6n: command W W W W W W R W R W R W address 1 2 3 4 5 6 1 1 2 2 3 3 data 0 0 0 0 0 0 0 1 0 1 0 1 then: command R W R W R W R W R W R W address 4 4 5 5 6 6 1 1 2 2 3 3 data 0 1 0 1 0 1 1 0 1 0 1 0 then: command R W R W R W R R R R R R address 4 4 5 5 6 6 1 2 3 4 5 6 data 1 0 1 0 1 0 0 0 0 0 0 0

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Data / Address Scramble

Data scramble: only for DRAM, caused by Bit Line and /BL

• Address scramble: in general, DRAM simple, SRAM complex

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Display Scramble

Display scramble: whole chip address decoding rule or chip architecture and DQ sequence

• describe the relationship between the electrical address and topological (physical) address

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