Overview
•
Obtain calibrated TCAD Sentaurus
models as an approximation for
Atomistic simulations of UTB
Homojunction and Heterojunction TFETs
•
TCAD models are approximations,
based on dynamic non-local band2band
tunneling model in TCAD Sentaurus
•
The effective band-gap for a material
due to structural quantization can be
estimated using nextnano
InSb UTB Homojunction TFET
“Performance Comparisons of Tunneling Field-Effect Transistors made of InSb, Carbon, and GaSb-InAs
Broken Gap Heterostructures”, Mathieu Luisier and Gerhard Klimeck, IEDM 2009
GaSb-InAs UTB Heterojunction TFET
“Performance Comparisons of Tunneling Field-Effect Transistors
made of InSb, Carbon, and GaSb-InAs Broken Gap Heterostructures”,
Mathieu Luisier and Gerhard Klimeck, IEDM 2009
InAs UTB Homojunction TFET
“Comparison of Performance, Switching Energy and Process Variations
for the TFET and MOSFET in Logic”, Uygar E. Avci, Rafael Rios, Kelin Kuhn,
Ian A. Young, VLSI Symposium 2011.