The list of compulsory formulas and relationships for course 5ECD0
(Electronic Circuits 1) 2025/2026
(to be known for the midterm on 9/3/2026)
Diodes
VT 
kT
 25 mV @ room temperature (unless otherwise specified)
q


iD  I S e v D / VT  1  I S e v D / VT in forward bias
1
 i

V
  T
rd   D
ID
 v D @ BIAS 
I D 2 / I D1
10
(60 mV per decade).

60 mV
VD
vD
 2 mV/K
T iD I D const.
MOSFETs
Pinch-off:
iD 
1 'W
2
k n vGS  Vt  without channel-length modulation effect
2 L
iD 
1 'W
2
k n vGS  Vt  1  vDS  with channel-length modulation effect
2 L
Triode region: iD  k n'
W
2 
vGS  Vt vDS  1 vDS


L
2
kn'  nCox
kn 
W '
kn
L
All these relations also for the PMOS transistors (saturation and triode region). Of course, the boundary conditions
for operation of NMOS and PMOS in saturation and triode region must be known as well.