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VP0350
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
†
Order Number / Package
BVDSS /
BVDGS
RDS(ON)
(max)
ID(ON)
(min)
TO-3
TO-220
Die†
-500V
7.5Ω
-1A
VP0350N1
VP0350N5
VP0350ND
MIL visual screening available
Advanced DMOS Technology
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Package Options
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
G
TO-3
Case: DRAIN
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
Soldering Temperature*
S
G D
S
TO-220
TAB: DRAIN
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
05/19/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
VP0350
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
@ TC = 25°C
θjc
θja
°C/W
°C/W
IDR*
IDRM
TO-3
-1.5A
-3.0A
100W
1.25
30
-1.5A
-3.0A
TO-220
-1.0A
-3.0A
50W
2.5
40
-1.0A
-3.0A
* ID (continuous) is limited by max rated Tj.
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Electrical Characteristics (@ 25°C unless otherwise specified)
Parameter
Min
Typ
BVDSS
Drain-to-Source Breakdown Voltage
-500
VGS(th)
Gate Threshold Voltage
-2.5
∆V GS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
ID(ON)
Unit
4.8
VGS= 0V, ID =-10mA
V
VGS = VDS, ID = -10mA
mV/°C
VGS = VDS, ID = -10mA
-100
nA
VGS = ±20V, VDS = 0V
-200
µA
VGS = 0V, VDS = Max Rating
-2
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
6.0
-1.5
-1.0
A
-3.0
VGS = -5V, VDS = -25V
VGS = -10V, VDS = -25V
Static Drain-to-Source
ON-State Resistance
6.0
5.5
7.5
∆RDS(ON)
Change in RDS(ON) with Temperature
0.7
1.2
GFS
Forward Transconductance
CISS
Input Capacitance
720
800
COSS
Common Source Output Capacitance
110
130
CRSS
Reverse Transfer Capacitance
20
50
td(ON)
Turn-ON Delay Time
11
30
tr
Rise Time
11
30
td(OFF)
Turn-OFF Delay Time
70
100
tf
Fall Time
22
30
VSD
Diode Forward Voltage Drop
-1.0
-1.3
trr
Reverse Recovery Time
550
0.25
Conditions
V
-4.5
ON-State Drain Current
RDS(ON)
Max
Ω
VGS = -5V, ID = -0.25A
VGS = -10V, ID = -0.25A
%/°C
VGS = -10V, ID = -0.25A
0.45
Ω
Symbol
VDS = -25V, ID = -0.5A
pF
VGS = 0V, VDS = -25V
f = 1 MHz
ns
VDD = -25V
ID = -1A
RGEN = 10Ω
V
VGS = 0V, ISD = -0.25A
ns
VGS = 0V, ISD = -0.25A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
PULSE
GENERATOR
INPUT
90%
-10V
t(ON)
td(ON)
Rgen
t(OFF)
td(OFF)
tr
tF
D.U.T.
0V
90%
OUTPUT
INPUT
90%
RL
OUTPUT
VDD
10%
10%
VDD
2
VP0350
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Typical Performance Curves
Output Characteristics
Saturation Characteristics
-5
-2.0
VGS = -10V
-4
VGS = -10V
-1.6
-8V
-8V
-6V
-5V
ID (amperes)
ID (amperes)
-7V
-3
-6V
-2
-1.2
-0.8
-5V
-4V
-0.4
-1
-4V
0
0
0
-10
-20
-30
-40
-50
0
-2
-4
VDS (volts)
-6
-8
-10
VDS (volts)
Power Dissipation vs. Case Temperature
Transconductance vs. Drain Current
1.0
100
TO-3
VDS = -25V
80
TA = -55°C
0.6
PD (watts)
GFS (siemens)
0.8
TA = 25°C
TA = 150°C
0.4
0.2
60
TO-220
40
20
0
0
0
-0.5
-1.0
-1.5
-2.0
0
-2.5
25
50
ID (amperes)
125
100
150
Thermal Response Characteristics
Maximum Rated Safe Operating Area
-10
Thermal Resistance (normalized)
1.0
TO-220 (pulsed)
TO-3 (DC)
ID (amperes)
75
TC (°C)
-1
TO-220 (DC)
-0.1
TO-220
P D = 50W
0.8
0.6
T C = 25°C
TO-3
PD = 100W
TC = 25°C
0.4
0.2
T C = 25°C
-0.01
-1
-10
-100
0
0.001
-1000
VDS (volts)
0.01
0.1
tp (seconds)
3
1
10
Typical Performance Curves
BVDSS Variation with Temperature
1.15
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On-Resistance vs. Drain Current
20
VGS = -5V
16
RDS(ON) (ohms)
1.1
BVDSS (normalized)
VP0350
1.05
1.0
VGS = -10V
12
8
4
0.95
0
0.9
-50
0
50
100
150
0
-1.0
-2.0
-3.0
-4.0
-5.0
ID (amperes)
Tj (°C)
V(th) and RDS Variation with Temperature
Transfer Characteristics
1.2
-5.0
2.0
RDS(ON) @ -10V, -0.25A
VDS = -25V
TA
-2.0
VGS(th) (normalized)
25
°C
A =
T
-3.0
=
C
0°
15
1.0
1.0
0.9
0.8
-1.0
V(th) @ -10mA
0
0
0
-2
-4
-6
-8
-10
RDS(ON) (normalized)
1.1
-55
°C
A =
T
ID (amperes)
-4.0
0
-50
0
50
VGS (volts)
100
150
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
800
-10
f = 1MHz
CISS
-8
VDS = -10V
VGS (volts)
C (picofarads)
600
400
200
COSS
-6
800 pF
VDS = -40V
-4
-2
CRSS
500 pF
0
0
0
-10
-20
-30
-40
0
2
4
6
8
10
QG (nanocoulombs)
VDS (volts)
05/19/03
©2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 222-8888 • FAX: (408) 222-4895
www.supertex.com