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Low Power High Speed Operational Amplifi

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Low Power High Speed Operational Amplifier
Design Using Cadence
Ahsan Javed Awan and Peter Wilson

Abstract—In this paper, the design space that optimizes the
performance of operational amplifier in terms of current
consumption and unity gain band width product has been
explored using Cadence. A two stage indirect compensated active
load cascode operational amplifier with a current consumption of
335uA and a speed as high as 23MHz has been presented. A novel
indirect compensated multistage opamp designed in AMS 0.35um
technology further reduces the current to 120uA and increases
the speed to 35MHz. The layout of both designs incorporates
Common Centroid method for improved matching among
devices
The most well known miller compensated operational
amplifier with zero nulling resistor that fulfills the above
captioned design goals has been discussed in Section II,
Section III explains active load cascode topology as a first
attempt toward the goal of low power and high speed design.
Section IV unveils the multistage opamp topology using
indirect compensation approach. Section V covers test
circuitry used to determine the performance metrics and layout
considerations. Simulation results are discussed in Section VI.
Finally the concluding remarks are given in section VII.
Keywords— Indirect Compensation, Low Power, Split Length
Differential Pair, Three Stage Opamp.
TABLE I DESIGN SPECIFICATIONS
I. INTRODUCTION
O
perational Amplifiers are one of the basic components in
integrated systems on chip that are designed to meet the
stringent constraints of area, power and speed i.e. in a mobile
phone 1W is available for the base band signal processing, so
in order to coupe up the power limitation for the whole
system, it is inevitable to design the individual building blocks
with minimum current consumption. Moreover those key
components should also be designed for higher speeds for
higher throughput of the overall system.
C.Zhang in [1] has designed an ultra low power (40uW)
operational amplifier using a forward biased source substrate
junction approach along with a low voltage current mirror but
its performance degrades in terms of unity gain band width
product and slew rate. Jirayuth in [2] and [3] has proposed
operational amplifiers for less than 500uW power
consumption but his designs too suffer from low gain band
width product. Alfonso in [4] has discussed various design
methodologies for low power operational amplifiers that
include the use of telescopic opamp, but all of them have a
limitation either on their open loop gain or unity gain
bandwidth product. Hence in order to meet the minimum
design specifications given in Table I, different design
topologies are to be simulated and parametrically analyzed
using Cadence tools.
Ahsan Javed Awan was with the ECS Department, University of
Southampton, SO171BJ, UK. He is now with 3W Systems (Pvt) Ltd
Rawalpindi, 46000, Pakistan (corresponding author phone: 0092-3335315137; e-mail: ahsanjaved_nust@ yahoo.com)
Peter Wilson is with the ECS Department, University of Southampton,
SO171BJ, UK (email: pwr@ecs.soton.ac.uk)
Parameter
Open Loop Gain (db)
Phase Margin (degrees)
Gain BandWidth Product (MHz)
Idd (µA)
Slew Rate (V/µs)
Load (pF)
VDD (V)
VSS (V)
Value
> 80
> 50
>150
< 350
> 20
10
1.67
-1.67
II. MILLER COMPENSATED OPAMP WITH ZERO NULLING
RESISTOR
In order to design miller compensated opamp for greater
than 80dB gain, both PMOS and NMOS transistors are
connected in diode configuration and biased using 10uA
current source, The widths are adjusted so that Vdsat of both
the transistors becomes equal to 5% of Vdd. So 11.5u for
PMOS and 2.6u for NMOS results in the required Vdsat. The
transconductance of each transistor is simulated for various
lengths and the optimum one turns out to be 0.8um. A simple
beta multiplier [5] is designed using the above transistor
lengths and widths. This opamp design comprises of NMOS
differential stage and Class A output stage. Using parametric
analysis the optimum number of fingers for the differential
pair is obtained. The value of miller capacitor and number of
fingers in the output stage are adjusted to trade off between
slew rate and phase margin. The schematic is shown in Fig. 1.
The transistor sizes are tabulated in Table II and the
simulation results are given in Table III.
III. INDIRECT COMPENSATED ACTIVE LOAD
CASCODE OPAMP
Vishal and Jacob Baker in [6] have discussed various
indirect compensated two stage topologies and have
established a theory of indirect feedback compensation.
Active load cascode topology from their paper has been
used as a starting point (see Fig. 2). In fact the active load of
the opamp designed in section I is cascoded, this generates a
low impedance node between two active loads and feedback
current is fed through this node. This also eliminates the
need of zero nulling resistor.
consumption. Table IV gives the transistor sizes for this
topology. The design is simulated and post layout model with
parasitic capacitances is also simulated and results are
presented in Table V.
Fig. 1 Miller Compensated Opamp with Biasing Circuitry
TABLE II TRANSISTOR SIZES OF MILLER COMPENSATED OPAMP
Transistor Label
Mb1
Mb2
Mb3
Mb4
Mb5
Mb6
M1
M2
M3
M4
M5
M6
M7
Total Width(Wtot) in µm
11.4
11.4
2.6
2.6
10.4
2.6
34.2
34.2
13
13
15.6
285
65
No of Gates(ng)
2
2
2
2
8
2
6
6
10
10
12
50
50
TABLE III PERFORMANCE SUMMARY OF MILLER COMPENSATED
OPAMP
Performance Metric
Open Loop Gain (db)
Phase Margin (degrees)
Gain BandWidth Product (MHz)
Idd (µA)
Slew Rate on Rising Edge (V/µs)
Slew Rate on Falling Edge (V/µs)
Power Dissipation (mW)
Post Schematic
81
57
28
346
41
20
1.4
The biasing circuitry is the same used in Miller
Compensated Opamp. The parameters are again tweaked to
not only meet the design criteria but also to reduce the current
Fig. 2 Indirect Compensated Active Load Cascode Opamp.
TABLE IV TRANSISTOR SIZES OF INDIRECT COMPENSATED
ACTIVE LOAD CASCODE OPAMP
Transistor Label
M1
M2
M1a
M2a
M3
M4
M5
M6
M7
Total Width(Wtot) in µm
28.5
28.5
28.5
28.5
2.6
2.6
10.4
318.6
72
No of Gates(ng)
2
2
2
2
2
2
8
36
36
TABLE V PERFORMANCE SUMMARY OF INDIRECT COMPENSATED
OPAMP
Performance Metric
Open Loop Gain (db)
Phase Margin (degrees)
Gain BandWidth Product (MHz)
Idd (µA)
Slew Rate on Rising Edge (V/µs)
Slew Rate on Falling Edge (V/µs)
Power Dissipation (mW)
Post Schematic
91
61
23
334
27
22
1.1
Post Layout
91
61
22
335
26
21
1.1
IV. INDIRECT COMPENSATED THREE STAGE OPAMP
In a two stage opamp design, there is a limitation of slew
rate because it mainly depends on the current in the output
stage and the load capacitance. So for a slew rate of 20V/us
the current consumption can’t be reduced beyond a 300uA.To
mitigate the problem of slew rate Class AB output buffer stage
can be incorporated in the design. The realization of Class AB
buffer stage using floating current source to bias the push pull
output stage requires additional circuitry to bias that current
source which adds to the area overhead. So Class AB stage
has been realized by cross connecting the two NMOS
differential stages and driving the PMOS of common source
output stage with output of first differential stage as presented
in [7]. Fig. 3 explains these connections.
requirements. The gain beyond 80db is achieved by increasing
the widths of split length differential pairs. Table VI gives the
transistor sizes obtained as the result of iterative simulations
and the performance of designed topology is expressed in
TABLE VII.
TABLE VII PERFORMANCE SUMMARY OF IDIRECT COMPENSATED
THREE STAGE OPAMP STAGE
Performance Metric
Open Loop Gain (db)
Phase Margin (degrees)
Gain BandWidth Product (MHz)
Idd (µA)
Slew Rate on Rising Edge (V/µs)
Slew Rate on Falling Edge (V/µs)
Power Dissipation (mW)
Post Schematic
83
80
35
120
50
25
.396
Post Layout
83
76
35
122
50
23
.402
V. TESTING AND LAYOUT
Fig. 3 Indirect Compensated Split Length Differential Pair Opamp
with Class AB Output Stag
TABLE VI TRANSISTOR SIZES OF INDIRECT COMPENSATED THREE
STAGE OPAMP
Transistor Label
M1
M2
M3a
M3b
M4a
M4b
M5
M6
M7
M8
M9
M10
M11
M12
Total Width(Wtot) in µm
11.4
11.4
20.8
20.8
20.8
20.8
10.4
11.4
11.4
2.8
2.8
5.2
11.4
2.6
No of Gates(ng)
2
2
2
2
2
2
8
2
2
2
2
10
2
2
The low impedance node is created using the split length
differential pair in the first stage. The effect of a split length
transistor can be achieved by using two common gate
transistors each with twice the width of original one [8]. The
limitation of slew rate in Class AB output stage comes from
the biasing current through the differential pair and the
compensation capacitance between the first two stages. Hence
to achieve a higher slew rate, this minimum value of this
compensation capacitance is chosen i.e. 300fF.This brings in a
need of a resistor in series to meet the phase margin
In order to find out the frequency response of the proposed
designs, load capacitance is attached at the output and
100MOhm resistor is used in the feedback path of inverting
input which is then grounded via large capacitor of
100uF.This provide a path to any feedback signal to ground at
higher frequencies. The non inverting input is fed through dc
source with ac magnitude of 1V and dc voltage 0V since the
common mode input voltage is almost zero for all the above
proposed designs. For slew rate and total current
measurement, opamp is connected in unity gain buffer
configuration with load capacitance at the output and +/500mV pulse of period 2us is applied at the non inverting
input and transient analysis is made. Current measurement is
made at the Vdda node of the opamp and its average gives the
total current consumption. The overview of testing circuitry to
conduct post schematic and post layout simulations is shown
in Fig. 4.
Fig. 4 Testing Circuitry
The layout of designs discussed in section II and III has
been created using the common centroid method and are
shown in Fig. 5(a) and Fig. 5(b) respectively. For
simplification purposes ABBA pattern has been used for the
transistors in the all PMOS active loads, in all differential
pairs and in the NMOS stage of beta multiplier. This means
that all those transistors which were earlier designed as finger
multiples of basic NMOS and PMOS transistors biased with
10uA current have to be split into two transistors. For that the
width strips in the original schematic are modified for two
fingers in order to keep the overall widths same as before.
Hence the layout specific schematic replaces the original
transistors with two transistors connected in parallel. This also
affects the biasing of transistors too so the resistance in the
beta multiplier needs to be readjusted. The DRC errors have
been checked by using no_coverage switch. The layout is then
extracted with parasitic and post layout simulation is
performed to see the effects of parasitic capacitances on the
performance of presented opamps
does not have a zero slope, it affects the performance of
designs proposed against the voltage variations, The analogue
extracted form of designs are tested for the worst case i.e. the
supply voltage of +/- 1.42V. Active Load Cascode opamp is
affected only little with a reduction of 1db in gain, 1V in the
slew rate. But the three stage opamp is largely affected by the
supply voltage variations. The gain bandwidth product reduces
by 10MHz and slew rate by 4V. The reason is that the current
through the spit length differential pair reduces and since the
compensation capacitance of 300pF is fixed, the slew rate
drops.
.
Fig. 5(b) Layout of Indirect Compensated Three Stage Opamp
VI. CONCLUSION
Fig. 5(a) Layout of Indirect Compensated Active Load Opamp
The layout area for active load cascade opamp, calculated
by the tool, is 7552
and area of indirect compensated
split length differential pair opamp with class AB output stage
is 5488
. Since the beta multiplier designed for the biasing
The parasitic effects decreases the slew rate and unity gain
bandwidth so it is better to add a safety margin of 5 to 10% on
the original specifications in order to reduce the probability of
iterating through the simulation phase again. Three designs
have been presented all of which meet minimum design
criteria and three stage opamp design provides an optimum
solution for higher speed and low power consumption.
Moreover it is also optimized with respect to area. Though the
three stage opamp design meets the minimum design criteria
even with 15% supply voltage variations, its robustness can be
increased by the cascaded version of beta multiplier. The area
in turn is still expected to be comparable with that of active
cascade load opamp design.
APPENDIX
Fig. 6(a) Frequency Response of Miller Compensated Opamp
Phase margin is 57deg at fun = 28MHz
Fig. 6(b) Transient Response of Miller Compensated Opamp used as
a Unity Gain Buffer
Fig. 7(a) Frequency Response of Indirect Compensated Active
Load Cascode Opamp. Phase margin is 61deg at fun = 22MHz
Fig. 7(b) Transient Response of Indirect Compensated Active Load
Cascode Opamp used as a Unity Gain Buffer
REFERENCES
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
Fig. 8(a) Frequency Response of Indirect Compensated Split
Length Differential Pair Opamp with Class AB Output Stage.
Phase margin is 75deg at fun = 35MHz
Fig. 8(b) Transient Response of Indirect Compensated Split Length
Differential Pair Opamp with Class AB Output Stage used as a Unity
Gain Buffer
ACKNOWLEDGMENT
The Author thanks Dr. Li Ke, a Researcher at ECS
Department for explaining the current based opamp design
approach which has proved to be a starting point for all the
three designs presented in this paper.
C.Zhang, A.Srivastava and P.K.Ajmera, “A 0.8V Ultra Low Power
CMOS Operational Amplifier Design”, IEEE 2002 45th Midwest
Symposium on Circuits and Systems, Vol1, pp I-9-12, Aug2002.
Jirayuth Mahattanakul, and Jamorn Chutichatuporn, “Design Procedure
for Two-Stage CMOS OpampWith Flexible Noise-Power Balancing
Scheme”, IEEE Transactions on Circuits and Systems-I, Vol.52, pp
1508-1514, August 2005.
Jirayuth Mahattanakul, “Design Procedure for Two-Stage CMOS
Operational Amplifiers Employing Current Buffer”, IEEE Transactions
on Circuits and Systems-II, Vol.52, pp 766-770, August 2005.
Alfonso Cesar B. Albason, Neil Michael L. Axalan, Maria Theresa A.
Gusad,John Richard E. Hizon and Marc D. Rosales, “Design
Methodologies for Low-Power CMOS Operational Amplifiers in a
O.25um Digital CMOS Process” TENCON 2006, 2006 IEEE Region 10
Conference, pp 1-4, Nov 2006
David Johnes, Kennth W. Martin, Analogue Integrated Circuit design,
John Wiley & Sons 1997.
Vishal Saxena and R. Jacob Baker, “Indirect Feedback Compensation of
CMOS Op-Amps”, IEEE Workshop on Microelectronics and Electron
Devices 2006, Vol1, pp 3-4, Aug 2006.
Vishal Saxena and R. Jacob Baker, “Indirect Compensation Techniques
for Three-Stage CMOS Opamps”, 52st IEEE Midwest Symposium on
Circuits and Systems, pp 9-12, Aug 2009.
Vishal Saxena and R. Jacob Baker, “Compensation of CMOS Op-amps
using Split-Length Transistors” 51st IEEE Midwest Symposium on
Circuits and Systems, pp 109-112, Aug 2008.
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