IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 53, NO. 12, DECEMBER 2006 2539 Automatic Scaling Procedures for Analog Design Reuse Alessandro Savio, Luigi Colalongo, Member, IEEE, Michele Quarantelli, Member, IEEE, and Zsolt M. Kovács-Vajna, Senior Member, IEEE Abstract—In this paper, a methodology for analog design reuse is proposed. The basic idea is to keep the circuit topology unchanged while automatically modifying the MOSFETs aspect ratio in order and output conto control the transistor transconductances ductances DS . If ’s and DS ’s of each transistor are kept unchanged through the scaling procedure, we show that the overall frequency behavior of the scaled circuit remains very similar to the original one. The approach is very simple and it is suitable for the scaling of analog circuits. No input and output terminals have to be defined and it can be straightforwardly implemented in an automatic scaling tool. When this approach fails, more complex iterative numerical loops may be adopted. In order to validate and compare the scaling approaches, several linear and nonlinear circuits were scaled from a 0.25- m, 2.5-V voltage supply to a 0.15- m, 1.2-V voltage supply in standard CMOS technologies. Index Terms—Analog integrated circuits, design automation, MOSFET, technology CAD. I. INTRODUCTION I N recent years, due to the rising circuit complexity, we notice an increasing interest in the automatic circuit scaling and design porting. The trend to include analog and digital blocks on the same chip leads to growing difficulties for system-on-chip (SoC) designers. Today, the synthesis of digital circuits is a highly automated process whereas the analog design is still a hand base procedure and the analog block of an SoC is often the bottleneck of the whole project. The time to market pressure and the advent of deep submicron processes have enlarged this gap. Typically, dealing with digital projects, the only degree of freedom is the transistor width and the designer’s goal is an acceptable tradeoff between speed and power consumption. The technology scaling, by modifying several transistor parameters such as carriers mobility, gate oxide capacitance and voltage supply, improves the overall performances of digital circuits reducing the power delay product. On the other hand, it does not lead to the same benefits when applied to analog circuits. In analog circuit design, in fact, additional design variables, such as transistor lengths, bias currents, or specific requirements, such as voltage gain, unit gain frequency (UGF), Manuscript received July 27, 2005; revised May 4, 2006. This work was supported in part by PDF Solutions. This paper was recommended by Associate Editor T. B. Tarim. A. Savio, L. Colalongo, and Z. M. Kovács-Vajna are with the Department of Electronics, University of Brescia, 25123 Brescia, Italy. M. Quarantelli is with PDF Solutions Italia, 25015 Desenzano del Garda (BS), Italy. Digital Object Identifier 10.1109/TCSI.2006.883849 signal-to-noise ratio (SNR) and so on, turn the automatic circuit scaling to a challenging issue. While scaling analog circuits, their overall behavior is often modified and their performances altered. This is mainly due to several reasons intrinsically related to the fact that analog circuits operate directly with electrical quantities rather than logic thresholds or quantized levels. Hence, the automatic migration of analog circuits design is not a straightforward task as the digital counterpart and often involves the complete circuit redesign. Recently, in order to face this problem, several solutions were proposed both at research [1]–[3] and at commercial level [4]; the approaches [3] and [4] are based on optimization loops and massive SPICE simulations, solutions [1] and [2] are fully analytical approaches. In [5], the analytical approach of [1] and [2] defined for MOSFETs in the saturation region was generalized to account for transistors biased in the triode region. Moreover, to compensate possible inaccurate analytical solutions, a tuning procedure based on an optimization loop is described as well. It is worth noting that the analytical scaling of MOSFETs in the triode region is a challenging issue that often leads to analytical solutions, that although mathematically consistent, turn out to be inaccurate for practical applications. A MOSFET in the triode region, indeed, behaves as a controlled resistor and its drain current depends not linearly on the drain-to-source voltage . Therefore, a small inaccuracy in scaling may lead to large bias point variations. Similar the considerations hold for the transconductance and for con. On the other hand, a saturated MOS transistor beductance haves as a current source whose current slightly depends on the through the channel length modudrain-to-source voltage lation. In this case, if is not accurately controlled, the drain current does not change significantly and the bias point remains substantially unchanged. In this paper, an approach leading to a possible solution of the above issues is presented. The inaccuracies of the analytical solution are overcome by adopting a numerical procedure. The basic idea of the procedure is to modify the aspect ratio of the circuit transistors in order to obtain a scaled circuit where the MOSFET conductance parameters ( and ) are kept as close as possible to the original ones. For a wide class of analog circuits, this assures that the overall frequency behavior of the original and that of the scaled circuits remain very similar. This approach has shown to be very effective despite its simplicity and in many practical applications it preserves the whole dc and dynamic behaviors of the original circuits. Furthermore, when it fails, in order to strictly preserve the dynamic response of the original circuit, another algorithm is presented as well. 1057-7122/$20.00 © 2006 IEEE 2540 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 53, NO. 12, DECEMBER 2006 Fig. 2. Small-signal equivalent circuit and Bode diagram (gain modulus) of the common-source amplifier of Fig. 1. Fig. 1. Common-source amplifier. Although some loss of simplicity and generality occurs due to the introduction of input and output terminals, this method allows to extend the reuse procedure to many nonlinear circuits. The paper is organized as follows. In Section II, the scaling procedure is presented, in Section III, the numerical approach for small-signal analysis is explained whereas the extension to large-signal analysis is reported in Section IV along with some practical examples. Finally, in Section V conclusions are drawn. II. MATHEMATICAL BASIS OF SCALING PROCEDURE The aim of this section is to derive the mathematical relations describing the migration method that we propose. We will show that keeping the circuit topology unchanged and properly and of the transisscaling the conductance parameters , the scaled circuit pretors by changing their aspect ratio serves its main small-signal features (voltage gain, transconductance, etc.). Typically, we can distinguish between linear and nonlinear electronic circuits. In linear applications, as for instance amplifiers, the circuits work around a steady state bias point and input signals are kept small enough to avoid nonlinearities. Therefore, to introduce the scaling procedure for linear circuits, we take into account their small-signal equivalent circuits. On the other hand, dealing with nonlinear circuits, as for instance comparators, only the large-signal behavior is relevant and the approach is more cumbersome. In order to inductively derive the mathematical approach, we exploit on a very simple example. Then it will be shown that our conclusions hold, in general, for more complex analog circuits as well. Let us consider the common-source amplifier of Fig. 1 where the output is loaded with a dominant output capacitance . If we neglect the MOSFET parasitic capacitances, we can draw the small-signal equivalent circuit and the Bode diagram of the transfer function modulus (1) of Fig. 2. Basing on this model, (voltage gain) is easily calculated as the transfer function (1) where is the Laplace complex frequency. From the low-frequency voltage gain and the pole at the frequency the gain bandwidth product (GBWP) turns out to be (2) If we now change the technology parameters migrating to a new process, this generally modifies many of the circuit specifications such as the supply voltages, the geometrical and physical MOSFET parameters, the bias currents and so on. The circuit of Fig. 1 is a simple amplifier. In order to preserve its original behavior after the scaling procedure, the low-freand the gain bandwidth product GBWP quency voltage gain should remain unchanged. Furthermore, for the sake of generality we assume that the output (load) capacitance should be scaled by a factor . It follows (2) that, in order to preserve the original GBWP, the new MOSFET transcon. Likeductance scaling factor should be , wise, to keep unchanged the amplifier’s gain the output conductance should be scaled with the same factor . If the output capacitance is kept unchanged , and should remain the same at the end of the scaling procedure. These considerations derived for an ideal common-source amplifier hold for a wide class of amplifiers and linear circuits where the small-signal behavior is a rational function of and . When the small-signal behavior (voltage, current, impedance or transimpedance gain) should be preserved, and of all the transistors in the circuit should remain unchanged or equally scaled through the scaling procedure. It may be roughly explained observing that the overall MOSFET electrical characteristics are embodied in its conductance and transconductance. This property may exploited in automatic tools that, changing the aspect ratio of the transistors, and of each MOSFET preserving the original try to fit topology. Moreover, and may be easily computed by a simple SPICE bias point (.OP) simulation. Hence, the scaling procedure results very easy and do not require a deep knowledge of the circuit. This simple approach may fail when a dominant capacitance is missing or the MOSFET parasitics strongly influence the circuit behavior; in this case it may be difficult to find the exact and the GBWP may not be maintained. This scaling factor problem could be partially overcome creating a fitting loop and introducing, as further optimization parameters, the transistor and . When this apparasitic capacitances along with proach fails as well, a numerical approach that tries to fit GBWP or the circuit frequency response (amplitude) is required. It is worth noting that, in this case, ac simulations are required and the input and output terminals of the circuit should be localized, partially relaxing the generality of the above method. SAVIO et al.: AUTOMATIC SCALING PROCEDURES FOR ANALOG DESIGN REUSE 2541 The analysis carried out till now could be generalized to large signals. Basing on the circuit of Fig. 1 we define the classical slew rate (SR) for an amplifier as the maximum output voltage change over time or, equivalently, the output voltage rate as response to an ideal output transition the voltage step. For a low to high and from (2) we can SR of the circuit of Fig. 1 is write (3) This equation shows the link between small-signal and largesignal parameters. It is valid when two fundamental conditions are satisfied: the existence of dominant capacitance , typically the compensation capacitance, and a vanishing output resistance of the amplifier, in other words, an ideal current source. In a real circuit, these hypotheses are often not satisfied, the expression (3) becomes approximated and we can only assume that when the GBWP rises, the SR increases and vice versa. Moreover, in a linear time invariant system the step response carries the same information of the transfer function in the -domain, this is not true for realistic circuits due to the nonlinearities. Basing on the above remarks, circuits with identical step responses entail similar small-signal behaviors while the contrary and , that is not true. Hence, the scaling based on the keeps the dc gain and GBWP for amplifiers, is not enough to ensure that two circuits have similar transient responses. When this feature is important a fitting procedure that modifies the transistor’s aspect ratio trying to match the step response is required. This procedure, as in the case of ac small-signal fitting, requires the definition of input and output terminals. III. NUMERICAL APPROACH: , As introduced in the previous section, this approach to the circuit scaling is very useful when the small-signal behavior of the circuit should be preserved. The basic idea is to find a procedure that tries to match and of each transistor in the original and scaled circuits, reand , the procedure should spectively. In order to match modify the transistor aspect ratios, changing at each step the and of the channel widths (W) and lengths (L) until scaled circuit are as closer to the original as possible. The flowchart of the numerical procedure is shown in Fig. 3. It starts from the unscaled circuit designed in the original technology. The starting point of the procedure (transistor aspect ratios) is based on the analytical solution provided by the scaling approach, described in the following Section III-A. SPICE simulations are performed on the scaled circuit in order ’s and ’s which are then compared to the to extract corresponding values of the original circuit scaled up by the . If they do not match, the tuning procedure, that factor modifies the transistor aspect ratios, is started. It is based on the Levenberg–Marquardt algorithm, briefly summarized in Appendix I, that has been proved to be a fast and effective way to solve large nonlinear optimization problems of this type. Fig. 3. Flowchart of the g and g scaling procedure. At each step, the Levenberg–Marquardt algorithm requires the evaluation of the jacobian matrix of the system which is computed by a finite difference approach based on SPICE simulations. The tuning loop stops when the weighted least and compared to the original ones is square error of all and are evaluated lower than a desired threshold. Since from SPICE bias point simulations, the overall procedure turns out to be very fast. Furthermore, this approach does not require the definition of input and output terminals: the circuit characteristics are summarized by the differential parameters of each transistor. Hence, it is suitable for integration in automated scaling tools. When the circuit complexity is large, and the nonlinear optimization procedure becomes a hard task, it may be useful, and/or even if theoretically not necessary, to remove the parameters less relevant (typically zero) on the overall circuit behavior. has no influence. • • has no influence. In order to clarify this concept Fig. 4(a) shows a MOS transistor with gate and source terminals connected to constant voltage generators. The transistor represents the triode load of the common-source amplifier of Fig. 5. Considering the small-signal equivalent circuit shown in the right side of hence the controlled current source Fig. 4(a), is turned off, and is negligible. Same considerations hold when is constant, as in Fig. 4(b). The drain voltage of , hence the small-signal drain M1 is forced by an opamp to terminal is connected to the virtual ground and the conductance may be ignored. A. Initial Guess The target of this step is to find a suitable initial condition for the optimization loop. The input of the optimization procedure is the aspect ratio of the transistors of the original circuit while the output is the aspect ratio of the transistors of the scaled technology. A good starting point can help the numerical loop to find a faster solution but, of course, each point in the input variable space is suitable. The transistor aspect ratios of the original (unscaled) circuit, for instance, may be a reasonable initial guess. In order to initialize the numerical loop as close to the final solution as possible, we have adopted the channel length scaling 2542 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 53, NO. 12, DECEMBER 2006 TABLE I COMMON-SOURCE SCALING RESULTS Fig. 6. Output dc transfer characteristics of the common-source amplifier. Fig. 4. Discarding (a) g behavior. and (b) g which do not influence the circuit Fig. 7. Frequency responses (voltage gain) of the common-source amplifier. Fig. 5. Common-source amplifier with MOS triode load. method, defined in Appendix II. With respect to the constant inversion level scaling, this approach allows for the reduction of the power consumption, which could be advantageous for analog circuits. The entire process is summarized as follows. • The original inversion levels and are computed by (7). The electrical quantities, , , and are provided by the .OP Spice simulation of the unscaled circuit for each MOSFET. is non negative (negative), the • If the value of MOSFET with the highest (lowest) is chosen. is the corresponding to . • MOSFET is scaled according to (10) and (11). is calculated • The newest channel length scaling factor by means of (12). the scaled aspect ratios • For each MOSFET not equal to and are calculated. B. Simulations In order to validate the scaling procedure based on the fitand , several practical examples were considered. ting of The circuits originally designed for a 2.5-V, 0.25- m standard CMOS technology are scaled to a 1.2-V, 0.15- m process. As a first example, we apply the procedure to the scaling of the common-source amplifier with load transistor in the triode region of Fig. 5. The output capacitance scales from 1 pF to . As reported in Table I, the power con1.5 pF, hence sumption and the gate area increase because of the larger output capacitance. In order to preserve the low-frequency voltage gain and are scaled up by leading to and the UGF, larger devices. Each iteration, the number is reported in the table, accounts for the SPICE simulations required to compute numerical derivatives and the linear matrix computations of the Levenberg–Marquardt algorithm. Total CPU time is referred to a 2.8-GHz Pentium IV processor. In Fig. 6, the dc output transfer characteristics are reported, Fig. 7 shows that the scaled circuit perfectly matches the original frequency response. As a second example we scale the single-stage differential amplifier of Fig. 8. In this case, the output capacitance does . The not change through the scaling procedure, hence scaling results are reported in Table II: the gate area of the scaled circuit is doubled while its power consumption is more than five times smaller. It is worth adding that analog circuits scaling is more and more critical as the supply voltage is reduced [6], [7]. The counterintuitive area increase of the scaled circuit may roughly be explained by the analytical scaling rules [1], [2]. The product) MOSFET gate area ( (4) SAVIO et al.: AUTOMATIC SCALING PROCEDURES FOR ANALOG DESIGN REUSE 2543 Fig. 8. Differential amplifier with current-source load. Fig. 10. Miller operational amplifier. TABLE II DIFFERENTIAL PAIR SCALING RESULTS TABLE III MILLER OPAMP SCALING RESULTS Fig. 9. Frequency responses (voltage gain) of the differential amplifier. depends on technology parameters only. Generally, therefore the gate area increases through the scaling. Similar remarks hold for the static power consumption. For example (constant inversion level scaling) the bias currents inand the power dissipation reads crease by a factor Fig. 11. Output dc transfer characteristics of the Miller operational amplifier. (5) In Fig. 9, a good agreement between the ac frequency behaviors is shown, the small deviation at higher frequencies is mainly due to the transistor parasitic capacitances. The third circuit was the Miller operational amplifier of Fig. 10. Here, the compensation capacitance scales down from but, due to transistor’s parasitics, 500 to 350 fF has been settled to 0.75 to preserve the high-frequency response. The major scaling results are summarized in Table III. Fig. 11 depicts the dc transfer characteristics and Fig. 12 compares the original and the scaled voltage gains. C. AC Frequency Response Fitting The scaling procedure based on and fitting does not account for parasitic effects (e.g., parasitic capacitances) therefore, especially in recent technologies where these effects are remarkable, the frequency behavior of the circuit may be inacand are perfectly matched. In general, if curate, even if the dominant pole of the circuit is not far enough from higher Fig. 12. Frequency responses (voltage gain) of the Miller operational amplifier. frequency poles or the parasitic effects are relevant, the value of is not accurate and the small-signal behavior is not well controlled. In those cases, we may adopt a numerical loop that improves the accuracy. The corresponding flowchart is shown in Fig. 13. , fitting The initial condition is the scaled circuit of the loop. At each step, the ac frequency response of the circuit under scaling is compared to the original circuit (target), a Levenberg–Marquardt optimization procedure is applied until the distance between the two curves becomes lower than a threshold (the transistor aspect ratios are modified at each step). In order to apply this algorithm, the original (goal) and scaled circuit frequency responses (gain curves) should be suitably 2544 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 53, NO. 12, DECEMBER 2006 Fig. 13. Flowchart of the ac frequency response fitting. Fig. 15. Frequency responses of the Miller operational amplifier after ac fitting. Fig. 14. Frequency responses (voltage gain) of the Miller operational amplifier before ac fitting. TABLE IV MILLER OPAMP SCALING RESULTS Fig. 16. Flowchart of the transient response fitting. IV. NUMERICAL APPROACH: TRANSIENT RESPONSE As described in Section II the scaling method based on the transconductance fitting may not ensure that the transient responses are correct. By the way of example, in the circuit of Fig. 1 the SR scaling factor sampled (we used 10 points per decade). The numerical loop is stopped when the desired accuracy is achieved. Generally, when the gain curve is accurately matched, the phase response turns out to be correct as well, the dominant poles, in fact, are placed with precision by gain curve fitting. Therefore, the phase margin shows a good agreement and the procedure also leads to an accurate compensation network. On the other hand, the method requires input and output terminals to be defined, and the extreme generality of the transconductance fitting approach is reduced. Furthermore, the scaled circuit accurately fits the frequency response of the original circuit only through the input and the output terminals (the internal nodes do not appear in the optimization function). D. AC Fitting: Simulation Results As an example, we scale the Miller opamp of Fig. 10 with . The fitting of and leads to scaling factor an inaccurate matching of voltage gains at high frequencies because of the parasitic capacitances as shown in Fig. 14. Furthermore, the phase margin is reduced at about 15 , Table IV resumes the migration results. Fig. 15 shows that the scaling method allows to perfectly compensate inaccuracies with a small change of the gate area and power consumption. is a cumbersome function that depends on technology and bias . When the transient response parameters and rarely becomes an important issue, another scaling procedure should be adopted. The transient response is an important task for many analog circuits, especially for nonlinear circuits, such as amplifiers, comparators and so on. As for the ac fitting, input and output terminals must be defined. The procedure is exactly the same as that of the ac fitting, but now, the fitting curve at the Levenberg–Marquardt optimization loop is the transient response. In the following we will adopt as input signal a voltage step, but same considerations hold for each type of input signals (ramps, sinusoidal signals and so on). The flowchart is reported in Fig. 16. The fitting starts from the original design as initial guess and the transient response is assumed as the goal function of the optimization. Afterwards, the optimization loop is started and, at each step, a transient Spice simulation is run. If the transient response of the scaled circuit does not mach the goal function, the Levenberg–Marquardt procedure modifies the transistor aspect ratios in order to minimize the total square error. Transient responses have to be sampled in order to apply this procedure, a large number of samples is preferable for highly accurate solutions but, of course, it increases the optimization time. SAVIO et al.: AUTOMATIC SCALING PROCEDURES FOR ANALOG DESIGN REUSE TABLE V MILLER OPAMP SCALING RESULTS Fig. 17. Frequency responses of the Miller opamp scaled with ac and transient fitting. 2545 V. CONCLUSION In this paper, a procedure for analog circuit design reuse is proposed. The goal is to obtain a scaled circuit with a frequency behavior similar to the original one. Starting from an analytical migration approach (channel length scaling or constant inversion level scaling), the method modifies the transistor aspect ratios in order to properly scale the transistor’s transconductances and the output conductances. For linear circuits this ensures that the original and the scaled small-signal equivalent circuits are the same. The approach is very general, it does not require the definition of input and output terminals and it is suitable for implementation in automatic scaling tools. When transistor’s parasitics reduce the frequency performances, a numerical loop tries to compensate for the inaccuracies. Furthermore, when the dynamic behavior becomes an important issue a transient fitting procedure may be adopted. The approach loses its generality but allows for the scaling of nonlinear circuits as well. The scaling procedures were tested on different topologies designed in a 0.25- m, 2.5-V voltage supply standard CMOS technology and they were scaled to a 0.15- m, 1.2-V standard CMOS technology. APPENDIX I LEVENBERG–MARQUARDT METHOD Fig. 18. Normalized transient responses of the Miller opamp scaled with ac and transient fitting. Fig. 19. Normalized transient responses of the Miller opamp connected as voltage follower. In order to demonstrate the effectiveness of this method we have scaled the Miller opamp of Fig. 10 using ac and transient response fitting simultaneously. The results are reported in Table V while Fig. 17 and 18 show the amplifier voltage gains and the normalized output signals, respectively. Finally, the original and the scaled amplifiers have been simulated in a closed loop configuration. Fig. 19 shows the normalized responses to squared input signals when the Miller opamps are connected as voltage followers (buffers). The mean value of the input signals, in order to avoid output saturation, is while the peak to peak amplitude is 20% of . This Appendix briefly introduces the Levenberg–Marquardt optimization algorithm [8] for nonlinear least squares optimization problems. is a function that depends nonlinearly on a set of M un: in our approach is known parameters , or width . The model to be a transistor channel length fitted and the goal function to be minimized as a weighted sum of squares errors are where is the model evaluated at , is the sampled are weights associated target function, and , are as follows. with each sample. In our problem • Transistor transconductances in , fitting. • Samples of the ac frequency response evaluated at frequency in ac fitting. in • Samples of the transient response evaluated at time transient fitting. and are provided by Spice simulations for original and target technologies, respectively. The goal is to minimize and scaled circuit the differences between the original behaviors. By defining 2546 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 53, NO. 12, DECEMBER 2006 where is a factor used by the algorithm, and combining the above equations, the following system of linear equations results: (6) Given an initial guess for the problem parameters , the algorithm works as follows. . • Compute ). • Choose a small value for ( and evaluate . • ( ) Solve the linear (6) for • If , increase by a factor of 10 and go back to ( ). , decrease by a factor of 10, update • If , and go back to ( ). the solution The algorithm is stopped when one of the following conditions are met. is lower than a fixed value. • Final error decreases by a negligible amount even • Quadratic error absolute or relative. value. • The factor exceeds a • The maximum number of iterations is reached. APPENDIX II ANALYTICAL SCALING EQUATIONS Analytical scaling equations are based on the application of the Advanced Compact Model (ACM) MOSFET model described in [9]. In [9], very accurate expressions for largeand small-signal characteristics are derived. These expressions are valid for a MOSFET working in the triode and saturation regions as well as in weak, moderate and strong inversion. From the ACM equations the MOSFET forward and reverse normalized currents or inversion levels can be computed as If we consider the transistor’s intrinsic cutoff frequency [11], we can find its expression for a , MOS transistor in the triode region ( and ), and in the saturation region ( , and ). Using ACM model equations we are able to write a relation between the intrinsic cutoff frequency and the inversion levels (9) Following the approach proposed in [1] and [2], two different strategies may be derived, namely constant inversion level scaling and channel length scaling. A. Constant Inversion Level Scaling This is a fully analytical approach which tries to preserve the inversion levels of the original transistors in the scaled circuit and . From (9), if has to remain the same, the ratio cannot change during the scaling procedure, hence the channel length should scale as where is the mobility scaling factor from Section II results that scales up by difference and assuming an invariant slope factor turns out to be width where (7) . Finally, . Writing the , the new transistor is the scaling factor for the gate oxide capacitance . B. Channel-Length Scaling where This is a fully analytical approach to scale down the MOSFET channel length (10) is the drain current, the thermal voltage and the three transconductances are defined as and from sults the new channel width re- (11) In ACM model all voltages are referred to the local substrate , and can be linked to the MOSFET (bulk) so transconductances , and by [10] (8) where is the channel length scaling factor, i.e., the ratio . If the between minimum channel lengths, slope factor is invariant during the scaling, and scale as shown in Section II. Since and up by [9], also and scales up by the same SAVIO et al.: AUTOMATIC SCALING PROCEDURES FOR ANALOG DESIGN REUSE factor results . The drain current scaling factor Now, must be the same for each MOSFET, so the channel should be recomputed. In order to length scaling factor avoid that some transistors have channel lengths smaller than , is chosen as if otherwise where results . For each MOS transistor (12) Summarizing, in order to apply the scaling to a MOSFET circuit, the channel length of the transistor corresponding to is fully scaled by means of (10) and (11). Then is computed and scaled according to for the other devices using (12), (10) and (11) and finally for are replaced. These scaling equations are useful to initialize a numerical loop. In many applications as, for instance, voltage amplifiers, the low-frequency voltage gain depends linearly on the Early [2] and analytical calculations may voltage scaling factor be inaccurate. As an example, considering a saturated MOSFET operating in weak inversion, the dc scaling factor is [2]. If the ratio is lower than one, the scaled circuit has a smaller voltage gain. Furthermore, the procedure does not account for parasitic effects and the scaling factors are not accurately accounted for. ACKNOWLEDGMENT The authors would like to thank PDF Solutions Italia for the help and encouragement provided. REFERENCES [1] C. Galup-Montoro and M. C. Schneider, “Resizing rules for the reuse of MOS analog designs,” in Proc. XIII Symp. Integr. Circuits Syst. Design (SBCCI’00), Manaos, Brazil, Sep. 2000, pp. 89–93. [2] C. Galup-Montoro, M. Schneider, and R. M. Coitinho, “Resizing rules for MOS analog-design reuse,” IEEE Design Test Comput., pp. 50–58, Mar.–Apr. 2002. [3] S. Funaba, A. Kitagawa, T. Tsukada, and G. Yokomizo, “A fast and accurate method of redesigning analog subcircuits for technology scaling,” Anal. Integr. Circuits Signal Process., vol. 25, pp. 299–307, 2000. [4] [Online]. Available: http://www.neolinear.com [5] A. Savio, L. Colalongo, Z. Kovács-Vajna, and M. Quarantelli, “Scaling rules and parameter tuning procedure for analog design reuse in technology migration,” in Proc. IEEE Int. Symp. Circuits Syst. (ISCAS ’04), Vancouver, Canada, May 23–26, 2004, vol. 5, pp. V 117–V 120. [6] K. Bult, “Analog broadband communication circuits in pure digital deep sub-micron CMOS,” in Proc. IEEE Int. Solid-State Circuits Conf. (ISSCC’99), San Francisco, CA, Feb. 15–17, 1999, vol. 42, pp. 76–77. [7] H. Samueli, “Broadband communicstions ICs: enabling high-bandwidth connectivity in the home and office,” in Slide Suppl. IEEE Int. Solid-State Circuits Conf. (ISSCC’99), San Francisco, CA, Feb. 15–17, 1999, vol. 42, pp. 29–35. 2547 [8] W. H. Press, S. A. Teukolsky, W. T. Vetterling, and B. P. Flannery, Numerical Recipes in C, 2nd ed. Cambridge, U.K.: Cambridge University Press, 2002. [9] A. I. A. Cunha, M. C. Schneider, and C. Galup-Montoro, “An MOS transistor model for analog circuit design,” IEEE J. Solid-State Circuits, vol. 33, no. 10, pp. 1510–1519, Oct. 1998. [10] Star-Hspice Manual, Release 2001.2 Avant! Corporation. Austin, TX, Jun. 2001. [11] Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1987. Alessandro Savio was born in Brescia, Italy, in 1977. He received the Laurea degree (summa cum laude) in electronics engineering and the Ph.D. degree in information engineering from the University of Brescia, Brescia, Italy, in 2001 and 2005, respectively. He is currently a Research Associate in the Department of Electronics for Automation, University of Brescia. His main research interests are in the field of analog circuit technology migration, in design of integrated step-up converters and in modeling of organic thin film transistors. Luigi Colalongo (M’04) was born in Bologna, Italy, in 1965. He received the Laurea degree in electronics engineering from the University of Bologna, Bologna, Italy, and the Ph.D. degree in electronics engineering and material science from the University of Trento, Trento, Italy. From 1991 to 1999, he was with the Department of Electronics (DEIS), University of Bologna. He is currently an Associate Professor at the University of Brescia, Brescia, Italy, where he is involved in the numerical simulation of semiconductor devices and in integrated circuit design. Michele Quarantelli (M’94) was born in Parma, Italy, in 1965. He received the Laurea degree in electronics engineering at the University of Bologna, Bologna, Italy, in 1990 and the M.S. and Ph.D. degrees in electrical and computer engineering (in the field of mismatch modeling and characterization) from Carnegie Mellon University, Pittsburgh, PA, in 1997 and 2003 respectively. From 1996 to 1999, he was an Assistant Professor at the University of Brescia, Brescia, Italy. He is now with PDF Solutions, Desenzano del Garda, Italy. His main research interests are in the fields of process characterization, test structures design, and in the design of integrated circuits for applications such as wireless systems, analog signal processing, and basic analog building blocks. Zsolt M. Kovács-Vajna (M’90–SM’00) received the D.Eng. degree with honors and the Ph.D. degree in electronics engineering and computer sciences from the University of Bologna, Bologna, Italy, in 1988 and 1994, respectively. From 1989 to 1998, he was with the Department of Electronics Engineering (DEIS), University of Bologna, where he was an Assistant Professor and Research Associate in Electronics. In 1998, he joined the Department of Electronics Engineering (DEA) of the University of Brescia, Brescia, Italy. He is currently Full Professor of Electronics. He was an ST-Microelectronics consultant for several years. His research activities covered circuit simulation techniques, electromagnetic interference analysis in integrated circuits, several aspects of pattern recognition and integrated voltage converters based on capacitors or on inductors. Currently he is involved in integrated circuit design for innovative applications and technologies, as for example, integrated UWB radars for civil applications. He has authored more than 100 publications, including two books, articles in journals, in conference proceedings and 16 patents.